CN216786244U

CN216786244U - Evaporation semi-etching mask plate

Info

Publication number: CN216786244U
Application number: CN202220334118.8U
Authority: CN
Inventors: 张义波; 魏晓婷; 李光
Original assignee: Semiconductor Integrated Display Technology Co Ltd
Current assignee: Semiconductor Integrated Display Technology Co Ltd
Priority date: 2022-02-18
Filing date: 2022-02-18
Publication date: 2022-06-21
Anticipated expiration: 2032-02-18

Abstract

The utility model discloses a vapor plating semi-etching mask plate, which comprises a mask plate body, wherein an opening area is arranged on the mask plate body, a semi-etching groove is arranged on the edge of the mask plate body close to the opening area, and a blocking structure for blocking outward expansion of an evaporation material is arranged on the semi-etching groove of the mask plate body. The evaporation semi-etching mask plate is reasonable in structural design, the protruding blocking structure is designed on the semi-etching groove area, and evaporation materials are prevented from expanding outside the semi-etching area, so that evaporation shadows of the semi-etching area are reduced, and the frame design size of the OLED screen body is ensured not to be increased due to the use of the semi-etching evaporation.

Description

Evaporation semi-etching mask plate

Technical Field

The utility model relates to the technical field of display, in particular to an evaporation semi-etching mask plate.

Background

The evaporation MASK is used in the OLED light-emitting function film layer preparation process, limits the evaporation position and size of the film layer, currently, Micro OLEDs mostly adopt the W + CF process to realize full-color display, and the evaporation MASK can meet the process requirements by using a CMM (common metal MASK), as shown in FIG. 1; with the increase of the use frequency of the MASK, some nano-scale or even micro-scale particles, especially particles attached to the edge of the opening 1, are deposited on the surface of the MASK in the evaporation chamber, and in the process of laminating the substrate and the MASK, the particles scratch the substrate, and part of the particles are also transferred onto the substrate, thereby generating the problems of black spots, package failure and the like, and causing the display screen body to fail.

To prevent this, MASK manufacturers have developed a half-etching MASK design scheme, which designs a half-etching groove 2 at the edge of the opening region, and can allow the particle to stick in this region, so as to reduce the damage of the particle to the screen, as shown in fig. 2; however, the design can seriously increase the vapor deposition shadow, thereby increasing the design size of the screen frame and reducing the effective number of the wafer upper screen.

SUMMERY OF THE UTILITY MODEL

Aiming at the defects in the prior art, the utility model aims to provide a vapor plating semi-etching mask plate so as to achieve the purpose of reducing vapor plating shadows.

In order to solve the technical problems, the technical scheme adopted by the utility model is as follows:

the evaporation semi-etching mask plate comprises a mask plate body, wherein an opening area is arranged on the mask plate body, a semi-etching groove is arranged on the mask plate body close to the edge of the opening area, and a blocking structure used for blocking evaporation materials from expanding outwards is arranged on the semi-etching groove of the mask plate body.

Further:

the blocking structure is an annular convex structure.

The blocking structure is arranged at the edge of the semi-etching groove.

The blocking structure is a semicircular bulge or a square bulge or a trapezoidal bulge.

The upper surface of the blocking structure is flush with the upper surface of the mask plate body on one side of the half-etching groove.

Compared with the prior art, the utility model has the following advantages:

the evaporation semi-etching mask plate is reasonable in structural design, the protruding blocking structure is designed on the semi-etching groove area, and evaporation materials are prevented from expanding outside the semi-etching area, so that evaporation shadows of the semi-etching area are reduced, and the frame design size of the OLED screen body is ensured not to be increased due to the use of the semi-etching evaporation.

Drawings

The contents of the description and the references in the drawings are briefly described as follows:

fig. 1 is a first schematic diagram of a conventional structure.

Fig. 2 is a schematic diagram of a conventional structure.

FIG. 3 is a schematic structural diagram of the present invention.

FIG. 4 is a schematic view of the process of the present invention.

Fig. 5 is a schematic view of the utility model without the blocking structure.

FIG. 6 is a schematic view of the present invention with a blocking structure.

In the figure:

1. the mask comprises an opening area, 2, a half etching groove, 3, a blocking structure, 4, photoresist, 5, a substrate, 6, an evaporation source and 7, a shadow area.

Detailed Description

The following description of the embodiments of the present invention will be made in detail with reference to the accompanying drawings.

As shown in fig. 3 and 6, the evaporation half-etching mask plate comprises a mask plate body, wherein an opening area 1 is arranged on the mask plate body, a half-etching groove 2 is arranged on the mask plate body close to the edge of the opening area, and a blocking structure 3 for blocking the outward expansion of an evaporation material is arranged on the half-etching groove of the mask plate body.

Furthermore, a blocking structure 3 is arranged at the edge of the half-etching groove, and the blocking structure is an annular convex structure; a raised blocking structure is designed on the half-etching groove area to block the material of the evaporation source 6 from expanding outside the half-etching area, so that the evaporation shadow of the half-etching area is reduced, and the design size of the frame of the OLED screen body is ensured not to be increased due to the use of half-etching evaporation.

The evaporation MASK opening and the half etching area are generally prepared by photoetching and etching processes, in the technical scheme, the half etching area does not need to be etched to the opening, the photoetching range is adjusted, the MASK material at the opening is reserved to serve as a blocking structure of the half etching opening, the blocking structure can be designed into structures such as a semicircular bulge, a square bulge, a trapezoidal bulge and the like, and the evaporation material photoresist 4 is blocked to diffuse when the blocking structure is close to the opening area.

The upper surface of the blocking structure is flush with the upper surface of the mask plate body on one side of the half-etching groove. As shown in fig. 5, a shadow area 7 generated in the evaporation process of the half-etching mask plate without the blocking structure is larger, and as shown in fig. 6, a shadow area generated in the evaporation process of the half-etching mask plate with the blocking structure at the edge of the opening is smaller; in contrast, the barrier structure designed at the edge of the opening can effectively block the evaporation material from diffusing, thereby reducing the shadow on the substrate 5.

Half etching recess district improves the design among this technical scheme, is close MASK open region design at the recess and blocks the structure, can block organic small molecule gas material and cathode metal material entering recess district at OLED rete coating by vaporization in-process to reduce the coating by vaporization shadow on the base plate, and then improve the problem that the screen body frame design size that produces increases because of the coating by vaporization shadow increases, also can improve the overall utilization of wafer, arrange more screen bodies, practice thrift the cost.

The above-mentioned features are merely for describing preferred embodiments of the present invention and may be arbitrarily combined to form a plurality of embodiments of the present invention.

The utility model is described above with reference to the accompanying drawings, it is obvious that the specific implementation of the utility model is not limited by the above-mentioned manner, and it is within the scope of the utility model to adopt various insubstantial modifications of the inventive concept and solution, or to apply the inventive concept and solution directly to other applications without modification.

Claims

1. The utility model provides a half etching mask plate of coating by vaporization, includes the mask plate body, be equipped with the opening district on the mask plate body, lean on the opening district edge to be equipped with half etching recess on the mask plate body, its characterized in that: and a blocking structure for blocking the outward expansion of the evaporation material is arranged on the half etching groove of the mask plate body.

2. The vapor deposition half-etching mask plate according to claim 1, wherein: the blocking structure is an annular convex structure.

3. The evaporation half-etching mask plate according to claim 1, wherein: the blocking structure is arranged at the edge of the semi-etching groove.

4. The vapor deposition half-etching mask plate according to claim 1, wherein: the blocking structure is a semicircular bulge or a square bulge or a trapezoidal bulge.

5. The vapor deposition half-etching mask plate according to claim 1, wherein: the upper surface of the blocking structure is flush with the upper surface of the mask plate body on one side of the half-etching groove.