CN216752096U - Microphone and electronic equipment - Google Patents
Microphone and electronic equipment Download PDFInfo
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- CN216752096U CN216752096U CN202220177517.8U CN202220177517U CN216752096U CN 216752096 U CN216752096 U CN 216752096U CN 202220177517 U CN202220177517 U CN 202220177517U CN 216752096 U CN216752096 U CN 216752096U
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Abstract
A microphone and electronic equipment are disclosed, the microphone comprises a control chip and a microphone chip; the control chip comprises a signal input end and a charge pump end; the microphone chip includes: a substrate; a first support section; located on the substrate; a back plate; the first supporting part is positioned on the first supporting part; the second supporting part is positioned on the back plate; and a diaphragm positioned on the second support part; the back plate and the vibrating diaphragm form a working capacitor of the microphone chip, the back plate and the substrate form a second parasitic capacitor, and the vibrating diaphragm and the substrate form a third parasitic capacitor; the back plate is electrically connected with the signal input end of the control chip, and the vibrating diaphragm is electrically connected with the charge pump end of the control chip. It is disclosed that by connecting the back plate of the second parasitic capacitor to the signal input terminal of the control chip and connecting one end of the diaphragm of the third parasitic capacitor to the charge pump terminal of the control chip, the influence of the larger third parasitic capacitor is eliminated.
Description
Technical Field
The present disclosure relates to the field of semiconductor technologies, and in particular, to a microphone and an electronic device.
Background
Devices manufactured based on Micro Electro Mechanical Systems (MEMS) are called MEMS devices, and the MEMS devices mainly include a diaphragm and a backplate with a gap therebetween. The change of atmospheric pressure can lead to the vibrating diaphragm to warp, and the capacitance value between vibrating diaphragm and the backplate changes to convert the signal of telecommunication output into.
The size of parasitic capacitance in the chip design of the MEMS microphone can directly affect the sensitivity of the microphone, and the conventional design scheme is to reduce the parasitic capacitance by improving the parasitic area between the backplate and the diaphragm, but the parasitic capacitance caused by electrical leakage still exists.
SUMMERY OF THE UTILITY MODEL
The present disclosure provides a microphone and an electronic device to reduce parasitic capacitance due to electrical leakage and the like.
An aspect of the present disclosure provides a microphone including a control chip and a microphone chip;
the control chip comprises a signal input end and a charge pump end;
the microphone chip includes:
a substrate;
a first support section; located on the substrate;
a back plate; the first support part is positioned on the first support part;
the second supporting part is positioned on the back plate; and
the vibrating diaphragm is positioned on the second supporting part;
the back plate and the vibrating diaphragm form a working capacitor of the microphone chip, the back plate and the substrate form a second parasitic capacitor, and the vibrating diaphragm and the substrate form a third parasitic capacitor;
the back plate is electrically connected with a signal input end of the control chip, and the vibrating diaphragm is electrically connected with a charge pump end of the control chip.
Preferably, the back plate is provided with a first electrode welding point, and the back plate is electrically connected with the signal input end of the control chip through the first electrode welding point.
Preferably, the diaphragm has a second electrode bonding point, and the diaphragm is electrically connected to the charge pump terminal of the control chip through the second electrode bonding point.
Preferably, the substrate has a third electrode pad, and the substrate is grounded through the third electrode pad.
Preferably, the back plate includes:
an insulating layer; and
the conducting layer is positioned on one side, far away from the first supporting part, of the insulating layer;
the area of the conductive layer is smaller than that of the insulating layer.
Preferably, the area of the conducting layer of the back plate facing the substrate is smaller than the area of the diaphragm facing the substrate.
Preferably, the second parasitic capacitance is smaller than the third parasitic capacitance.
Preferably, the smaller the second parasitic capacitance is, the larger the output voltage of the microphone chip is.
Preferably, a first parasitic capacitor is formed between the back plate and the diaphragm, and the first parasitic capacitor is connected in parallel with the working capacitor.
Preferably, the substrate has a back cavity penetrating through the front and back surfaces thereof, and the working capacitor is opposite to the back cavity.
Another aspect of the present disclosure provides an electronic device including the microphone described above.
According to the microphone provided by the disclosure, one end of the back plate of the second parasitic capacitor is connected with the signal input end of the control chip, and one end of the vibrating diaphragm of the third parasitic capacitor is connected with the charge pump end of the control chip, so that the influence of the larger third parasitic capacitor is eliminated.
In a preferred embodiment, the smaller the second parasitic capacitance, the larger the value of Vout will be, and the higher the sensitivity; the sensitivity of the microphone chip can be improved by further reducing the second parasitic capacitance.
In a preferred embodiment, the conductive layer of the back plate is only disposed at a position corresponding to a vibration region of the diaphragm, that is, the area of the conductive layer is smaller than that of the insulating layer, so as to reduce the first parasitic capacitance.
Drawings
The above and other objects, features and advantages of the present disclosure will become more apparent from the following description of embodiments of the present disclosure with reference to the accompanying drawings, in which:
fig. 1 shows a cross-sectional view of a microphone of an embodiment of the present disclosure;
fig. 2 shows a top view of a microphone of an embodiment of the present disclosure;
fig. 3 shows a schematic perspective structure of a microphone chip according to an embodiment of the present disclosure;
fig. 4 shows a cross-sectional view of a microphone chip of an embodiment of the disclosure;
FIG. 5 shows a circuit schematic of a microphone of an embodiment of the present disclosure;
FIG. 6 shows a top view of a microphone chip of an embodiment of the disclosure;
fig. 7 shows a cross-sectional view along AA of fig. 6.
Detailed Description
The present disclosure is described in further detail below with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the disclosure and are not limiting of the disclosure. It should be further noted that, for the convenience of description, only some of the structures relevant to the present disclosure are shown in the drawings, not all of them.
In the description of the present disclosure, unless expressly stated or limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, e.g., as meaning permanently connected, removably connected, or integral to one another; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present disclosure can be understood in a specific case to those of ordinary skill in the art.
In the present disclosure, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise the first and second features being in direct contact, or may comprise the first and second features being in contact, not directly, but via another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
In the description of the present embodiment, the terms "upper", "lower", "right", etc. are based on the orientations or positional relationships shown in the drawings only for convenience of description and simplicity of operation, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present disclosure. Furthermore, the terms "first" and "second" are used only for descriptive purposes and are not intended to have a special meaning.
Fig. 1 is a cross-sectional view of a microphone provided in an embodiment of the present disclosure, and fig. 2 is a top view of the microphone provided in the embodiment of the present disclosure. As shown in fig. 1 and 2, the microphone includes a substrate 30, a microphone chip 10, a control chip 20, and a housing 40; the microphone chip 10 and the control chip 20 are fixed on the substrate 30, and the housing 40 is fixedly connected with the substrate 30.
The microphone chip 10 may be, for example, a mems sensor. Fig. 3 shows a schematic perspective view of the microphone chip 10 according to the embodiment of the present disclosure, and fig. 4 shows a cross-sectional view of the microphone chip 10 according to the embodiment of the present disclosure.
As shown in fig. 3 and 4, the microphone chip 10 includes a substrate 100, and a first supporting portion 110, a back plate 130, a second supporting portion 120, and a diaphragm 150 sequentially disposed on the substrate 100. Wherein the substrate 100 has a back cavity 101 through its front and back sides; the first supporting part 110 is supported between the backplate 130 and the substrate 100, and is used for electrically isolating the backplate 130 from the substrate 100 and providing support for the backplate 130; the second supporting portion 120 is located between the back plate 130 and the diaphragm 150, and is used for electrically isolating the back plate 130 and the diaphragm 150, so that the back plate 130 and the diaphragm 150 are disposed opposite to each other and spaced apart from each other, and an oscillating acoustic cavity 160 for the diaphragm 150 to vibrate is formed between the back plate 130 and the diaphragm 150.
The substrate 100 is a single crystal silicon substrate, but may be a polycrystalline silicon substrate. The second support 120 and the first support 110 are generally formed by depositing and etching an easily corrodible insulating material, preferably silicon oxide, but polyethylene oxide or the like may be used.
The back plate 130 includes an insulating layer 131 and a conductive layer 132, which are stacked, and the conductive layer 132 is located on a side of the insulating layer 131 away from the first supporting portion 110. The conductive layer 132 has an area smaller than that of the insulating layer 131 and is positioned corresponding to the movable portion of the diaphragm 150. The back plate 130 has a plurality of sound holes 133, and each sound hole 133 penetrates through the thickness direction of the back plate 130.
The insulating layer 131 is formed by depositing silicon nitride, and the periphery of the insulating layer is fixedly bonded on the first supporting portion 110, and the silicon nitride has high hardness and high melting point, so that the rigidity of the back plate 130 can be ensured. The conductive layer 132 is formed by deposition of polysilicon, for example, and has good conductivity. However, the embodiments of the present disclosure are not limited thereto, and those skilled in the art may make other arrangements for the structure and material of the back plate 130 as needed.
The diaphragm 150 is formed by a deposition process using a polysilicon material, in this embodiment, a recess 151 is formed in the diaphragm 150, a plurality of recesses 151 are formed in a region of the diaphragm 150 facing the acoustic cavity 160, and by providing the recesses 151, stress can be released in a processing process and/or a using process of the diaphragm 150, so that a stress concentration risk when the diaphragm 150 deforms is reduced, reliability and consistency of the diaphragm 150 are improved, and thus yield of the diaphragm 150 and microphone chips is improved; and because only the recess 151 is provided on the diaphragm 150, the processing cost is low, and the diaphragm is suitable for mass production.
In the present embodiment, the bottom of the recess 151 is a circular structure, i.e. the projection of the recess 151 on the back plate 160 is a circle. However, the bottom shape of the concave portion 151 is not limited to a circle in the embodiment of the present disclosure, and the projection of the concave portion 151 on the back plate 130 may also be a polygonal structure.
The diaphragm 150 includes at least one air hole 152, the air hole 152 communicating with the oscillating acoustic chamber 160. In this embodiment, the number of the air holes 152 is one, and the air holes are located in the center of the diaphragm 150. However, the embodiments of the present disclosure are not limited thereto, and those skilled in the art may make other arrangements for the number and positions of the air holes 152 as needed.
The diaphragm 150 is provided with the air hole 152 to reduce the air pressure impact that the vibrating diaphragm 150 receives in the vibration process, make the vibrating diaphragm 150 vibration process, the high-pressure air flow part that produces in the vibration acoustic cavity 160 discharges the exterior space through the air hole 152, effectively balance the atmospheric pressure, improve the acoustic effect, and can prevent the vibration in-process, because the vibration that the vibrating diaphragm 150 both sides pressure differential leads to is inhomogeneous and the problem of damage.
In this embodiment, one air hole 152 is disposed in the center of the diaphragm 150, but the disclosure is not limited thereto, and two or more air holes 152 may be disposed, and the position of the air hole 152 may be disposed at a non-recess position or a recess portion 151 of the diaphragm 150, and the number, size and position of the air holes 152 are not limited in the disclosure.
Further, in order to prevent the diaphragm 150 from adhering to the backplate 130 during the vibration process, an anti-sticking protrusion (not shown) is protruded from a side of the diaphragm 150 facing the backplate 130, and a projection of the anti-sticking protrusion on the diaphragm 150 is located at a non-concave position of the diaphragm 150, so as to better ensure the structural strength of the diaphragm 150 and reduce the stress formed during the processing of the diaphragm 150.
In order to facilitate the formation of the recess 151 during the deposition of the diaphragm 150, it is preferable that the sound holes 133 on the backplate 130 correspond to the positions and/or sizes of the recesses 151 on a one-to-one basis. By arranging the sound holes 133 corresponding to the recessed portions 151 one to one on the back plate 130, the diaphragm 150 with the recessed portions 151 can be obtained more conveniently in a deposition manner while the sound holes 133 play a role in balancing air pressures on two sides, so that the processing and molding of the diaphragm 150 are facilitated.
The substrate 30 includes a hole 310; the microphone chip 10 covers the hole 310, and particularly, the back cavity 101 of the microphone chip 10 is communicated with the hole 310; the microphone chip 10 is used for detecting sound waves entering through the hole 310. The backplate 130 and the diaphragm 150 form the working capacitance C0 of the microphone. The diaphragm 150 has a certain flexibility, the backplate 130 has a certain rigidity, and when sound waves are transmitted to the microphone from the outside, the diaphragm 150 vibrates under the action of the sound waves, so that the relative distance between the backplate 130 and the diaphragm 150 changes, and the capacitance value of the working capacitor C0 changes, and the change of the capacitance value is converted into an electrical signal through the control chip 20.
The control chip 20 may be, for example, an application specific integrated circuit chip. An application specific integrated circuit chip is called an ASIC chip for short, and the ASIC chip is a CMOS circuit manufactured on a silicon substrate.
The control chip 20 is disposed on the substrate 30 and is connected to the microphone chip 10 and the conductive area 320 of the substrate 30 through the connection line 50. The connecting wires 50 are made of a material with good electrical conductivity, such as gold wires, the housing 40 is made of a material, such as metal or plastic, and the microphone chip 10 and the control chip 20 are fixed on the substrate 30 by, for example, adhesive glue.
Fig. 5 is a schematic circuit diagram of a microphone according to an embodiment of the disclosure. Referring to fig. 1, 2 and 5, the control chip 20 includes a signal input terminal 210 (IN fig. 5) and a charge pump terminal 220 (BIAS IN fig. 5).
The control chip 20 is configured to process the sound wave signal detected by the microphone chip 10, and a signal output by the control chip 20 is led out to a main board of the electronic device through the conductive area 320 of the substrate 30.
The portion of the diaphragm 150 opposite to the backplate 130 (specifically, the conductive layer 132) is a first pole of the working capacitor C0, and the backplate 130 (specifically, the conductive layer 132) is a second pole of the working capacitor C0. The first pole of the working capacitor C0 is electrically connected to the charge pump terminal 220 of the control chip 20, and the second pole of the working capacitor C0 is electrically connected to the signal input terminal 210 of the control chip 20.
The vibration area of the diaphragm 150 corresponds to an effective area between the diaphragm 150 and the back plate 130, and the effective area determines the performance of the microphone chip. However, in addition to the effective facing area, a first parasitic capacitance Cp1 is easily generated between the diaphragm 150 and the other facing portion of the backplate 130, and the first parasitic capacitance Cp1 reduces the sensitivity of the microphone chip.
The first parasitic capacitor Cp1 is also formed by the diaphragm 150 and the backplate 130, wherein the first electrode is the diaphragm 150, and the second electrode is the backplate 130. The first pole of the first parasitic capacitor Cp1 is electrically connected to the charge pump terminal 220 of the control chip 20, and the second pole of the first parasitic capacitor Cp1 is electrically connected to the signal input terminal 210 of the control chip 20. Namely, the working capacitor C0 and the first parasitic capacitor Cp1 are connected in parallel, and are connected in parallel to form a capacitor C.
As shown in the microphone chip 10 of fig. 3 and 4, the conductive layer 132 of the back plate 130 is only disposed at a position corresponding to the vibration region of the diaphragm 150, that is, the area of the conductive layer 132 is smaller than that of the insulating layer 131, so as to reduce the first parasitic capacitance Cp 1.
In addition to the first parasitic capacitance Cp1 existing between the diaphragm 150 and the backplate 130, parasitic capacitances are also caused between the backplate 130 and the substrate 100 and between the diaphragm 150 and the substrate 100 due to electrical leakage and the like. Wherein a second parasitic capacitance Cp2 is generated between the backplate 130 and the substrate 100 due to leakage current; a third parasitic capacitance Cp3 is created between the diaphragm 150 and the substrate layer 100 by leakage current.
Specifically, the second parasitic capacitance Cp2 is constituted by the backplate 130 and the substrate 100. The portion of the backplate 130 directly opposite the substrate 100 is a first pole of a second parasitic capacitance Cp2, and the substrate 100 is a second pole of a second parasitic capacitance Cp 2. The third parasitic capacitance Cp3 is constituted by the diaphragm 150 and the substrate 100. The portion of the diaphragm 300 facing the substrate 100 is a first pole of the third parasitic capacitor Cp3, and the substrate 100 is a second pole of the third parasitic capacitor Cp 3.
In order to reduce the parasitic capacitance and further improve the sensitivity and the signal-to-noise ratio, in this embodiment, the first pole (i.e., the back plate 130) of the second parasitic capacitance Cp2 is connected to the signal input end 210 of the control chip 20, and the second pole (i.e., the substrate 100) of the second parasitic capacitance Cp2 is grounded. A first pole (i.e., the diaphragm 150) of the third parasitic capacitor Cp3 is connected to the charge pump terminal 220 of the control chip 20, and a second pole (i.e., the substrate 100) of the second parasitic capacitor Cp2 is grounded.
Since the effective area of the back plate 130 (specifically, the area of the conductive layer 132) is smaller than the effective area of the diaphragm 150 (polysilicon poly area), the second parasitic capacitance Cp2 is smaller than the third parasitic capacitance Cp3, i.e., Cp2< Cp 3.
Further, since the second parasitic capacitance Cp2 is smaller than the third parasitic capacitance Cp3, i.e., Cp2< Cp3, the second parasitic capacitance Cp2 is divided in series with the capacitance C (the working capacitance C0 and the first parasitic capacitance Cp1 in parallel), and the final output voltage formula is:
vout is the output voltage, Vi is the input voltage, Vin is the voltage at the IN node, Zcp2Is the impedance, Z, of the second parasitic capacitance Cp2cIs the impedance of the operating capacitance C0 and the first parasitic capacitance Cp1 in parallel.
By connecting the first pole of the second parasitic capacitance Cp2 with the signal input terminal 210 of the control chip 20 and connecting the first pole of the third parasitic capacitance Cp3 with the charge pump terminal 220 of the control chip 20, the effect of the larger third parasitic capacitance Cp3 is eliminated.
Further, as can be seen from the above formula, the smaller the second parasitic capacitance Cp2 is, the larger the value of Vout is, and the higher the sensitivity is; the sensitivity of the microphone chip 10 can be improved by further reducing the second parasitic capacitance Cp 2.
FIG. 6 shows a top view of a microphone chip of an embodiment of the disclosure, and FIG. 7 shows a cross-sectional view of FIG. 6 along direction AA; as shown in fig. 6 and 7, the backplane 130 has a first electrode pad 134 thereon, the backplane 130 serves as a second pole of the working capacitor C0 and the first parasitic capacitor Cp1 and a first pole of the second parasitic capacitor Cp2, and the first electrode pad 134 is connected to the signal input terminal 210 of the control chip 20.
The diaphragm 150 has a second electrode pad 153, the diaphragm 150 serves as a first pole of the working capacitor C0 and the first parasitic capacitor Cp1, and a first pole of the third parasitic capacitor Cp3, and the second electrode pad 153 is connected to the charge pump terminal 220 of the control chip 20.
The substrate 100 has a third electrode pad 102, the substrate 100 serves as a second pole of the second parasitic capacitance Cp2 and the third parasitic capacitance Cp3, and the third electrode pad 102 is grounded.
According to the microphone provided by the disclosure, the back plate of the second parasitic capacitor is connected with the signal input end of the control chip, and one end of the vibrating diaphragm of the third parasitic capacitor is connected with the charge pump end of the control chip, so that the influence of the larger third parasitic capacitor is eliminated.
Meanwhile, in the connection mode of the embodiment, the smaller the second parasitic capacitance is, the larger the value of Vout is, and the higher the sensitivity is; the sensitivity of the microphone chip can be improved by further reducing the second parasitic capacitance.
Further, the conductive layer of the back plate is only arranged at a position corresponding to the vibration region of the diaphragm, that is, the area of the conductive layer is smaller than that of the insulating layer, so as to reduce the first parasitic capacitance.
In accordance with the embodiments of the present disclosure, as set forth above, these embodiments are not exhaustive of all of the details, nor are they limited to the specific embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the disclosure and the practical application, to thereby enable others skilled in the art to best utilize the disclosure and various modifications as are suited to the particular use contemplated. The present disclosure is to be limited only by the claims and their full scope and equivalents.
Claims (10)
1. A microphone is characterized by comprising a control chip and a microphone chip;
the control chip comprises a signal input end and a charge pump end;
the microphone chip includes:
a substrate;
a first support section; located on the substrate;
a back plate; the first supporting part is positioned on the first supporting part;
the second supporting part is positioned on the back plate; and
the vibrating diaphragm is positioned on the second supporting part;
the back plate and the vibrating diaphragm form a working capacitor of the microphone chip, the back plate and the substrate form a second parasitic capacitor, and the vibrating diaphragm and the substrate form a third parasitic capacitor;
the back plate is electrically connected with the signal input end of the control chip, and the vibrating diaphragm is electrically connected with the charge pump end of the control chip.
2. The microphone of claim 1, wherein the backplate has a first electrode pad thereon, and the backplate is electrically connected to the signal input of the control chip via the first electrode pad.
3. The microphone of claim 1, wherein the diaphragm has a second electrode bonding point, the diaphragm being electrically connected to the charge pump terminal of the control chip through the second electrode bonding point.
4. The microphone of claim 1, wherein the substrate has a third electrode pad, the substrate being grounded through the third electrode pad.
5. The microphone of claim 1, wherein the back plate comprises:
an insulating layer; and
the conducting layer is positioned on one side, far away from the first supporting part, of the insulating layer;
the area of the conductive layer is smaller than that of the insulating layer.
6. The microphone of claim 5, wherein the conductive layer of the backplate faces the substrate in a smaller area than the diaphragm faces the substrate.
7. The microphone of claim 1 or 6, wherein the second parasitic capacitance is smaller than the third parasitic capacitance.
8. The microphone of claim 1, wherein the smaller the second parasitic capacitance, the larger the output voltage of the microphone chip.
9. The microphone of claim 1, wherein a first parasitic capacitance is formed between the backplate and the diaphragm, and the first parasitic capacitance is connected in parallel with the working capacitance.
10. An electronic device, characterized in that it comprises a microphone according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220177517.8U CN216752096U (en) | 2022-01-21 | 2022-01-21 | Microphone and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220177517.8U CN216752096U (en) | 2022-01-21 | 2022-01-21 | Microphone and electronic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216752096U true CN216752096U (en) | 2022-06-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220177517.8U Active CN216752096U (en) | 2022-01-21 | 2022-01-21 | Microphone and electronic equipment |
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| CN (1) | CN216752096U (en) |
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