CN216744984U - Refrigeration piece and composite water ion generating device - Google Patents

Abstract

The utility model discloses a refrigeration piece and a composite water ion generating device, wherein the refrigeration piece comprises a metal conductive section, one end of the metal conductive section is provided with an N-type semiconductor, the other end is provided with a P-type semiconductor, and the connection mode between the N-type semiconductor, the P-type semiconductor and the metal conductive section is welding, bonding or embedding; the composite water ion generating device comprises the refrigerating piece and a second electrode, wherein the second electrode is positioned below the metal conducting section, the N-type semiconductor is connected with the positive pole of the power supply, the P-type semiconductor is connected with the negative pole of the power supply to form a current loop, and the voltage of the second electrode is greater than that of the metal conducting section. The utility model provides a refrigeration piece has changed heat absorption and radiating form, and each partial cooperation is inseparable, can not produce contact failure's problem, simultaneously, adopts the compound water ion generating device of its preparation, and long-pending dew is more, and nanometer water ion produces the effect and promotes by a wide margin.

Description

Refrigeration piece and composite water ion generating device

Technical Field

The utility model belongs to the technical field of the high pressure ion generating device technique and specifically relates to a refrigeration piece and compound water ion generating device are related to.

Background

Semiconductor refrigeration pieces on the market are generally sheet-shaped, as shown in fig. 1, the N/P particles in a plane polarization mode are vertically arranged, when the semiconductor refrigeration pieces are used, one surface absorbs heat, the other surface dissipates heat, certain requirements are met for the installation environment, the semiconductor refrigeration pieces are generally square sheets, the processing and fixing (such as welding) difficulty is relatively high, and the semiconductor refrigeration pieces are generally inconvenient to use.

Under the development condition of semiconductor refrigeration pieces, the existing discharge devices with water molecules such as nano water ion generation devices and hydroxyl radical generation devices in the market are basically semiconductor refrigeration pieces with N-type flat plate structures, so that the use effects of the devices are actually poor.

SUMMERY OF THE UTILITY MODEL

In order to solve the problem, the utility model provides a refrigeration piece and compound water ion generating device.

The utility model discloses a realize above-mentioned purpose:

the first aspect provides a refrigeration piece, which comprises a metal conductive section, wherein one end of the metal conductive section is provided with an N-type semiconductor, the other end of the metal conductive section is provided with a P-type semiconductor, and the N-type semiconductor, the P-type semiconductor and the metal conductive section are connected in a welding, bonding or embedding manner.

The N-type and P-type semiconductors may be made of other materials or composite materials with thermoelectric effect. The shape of the semiconductor is not limited to this, and may be a cylinder, a rectangular parallelepiped, a cube, a polygonal shaft, a sheet, or the like.

Further, the metal conductive segments are cylindrical, spherical, ellipsoidal, or a combination thereof.

Still further, the metallic conductive segments may be made of copper, stainless steel, alloys, titanium, platinum, or tungsten.

Furthermore, the whole body formed by the N-type semiconductor, the metal conducting segments and the P-type semiconductor is wrapped by an insulating material.

The utility model discloses the second aspect provides a compound water ion generating device who uses above-mentioned refrigeration piece, including the second electrode, the second electrode is located metal conducting segment below, and just the positive, the P type semiconductor junction power negative pole of N type semiconductor connection power forms current loop, the voltage of second electrode is greater than the voltage of metal conducting segment.

Further, the second electrode is arranged in a spherical shape, an ellipsoidal shape, a conical shape, a sawtooth shape, a cylindrical shape or a combination thereof.

Furthermore, heat dissipation parts are arranged on the N-type semiconductor and the P-type semiconductor.

Furthermore, the heat dissipation member is a heat dissipation pipe

Furthermore, the second electrode is mounted on a fixing plate, a mounting hole is formed in the fixing plate, the lower end of the insulating material extends outwards to form a boss, and the boss is inserted into the mounting hole and fixedly connected with the mounting hole to fix the metal conductive segment above the second electrode.

The utility model has the advantages as follows:

1. the brand new refrigeration piece is provided, the application form of the traditional semiconductor refrigeration piece is changed, the N/P particles are arranged oppositely and in the same column, the heat flow and the current in the refrigeration piece are positioned on the same axis, the metal conductive section absorbs heat, and the N-type semiconductor and the P-type semiconductor at the two ends release heat, so that the refrigeration piece is more convenient to mount and more flexible to use;

2. if only simply contact between N type semiconductor, P type semiconductor and the metal conducting segment in the refrigeration piece, then it is easy to take place the displacement because of receiving external force extrusion etc. and lead to contact failure to strike sparks each other, cause the incident, separate each other easily simultaneously, also be convenient for carry on the volume production, and the utility model discloses in the connected mode between N type semiconductor, P type semiconductor and the metal conducting segment be welding, bonding or inlaying for the connection stability each other, can not take place the displacement easily, both be convenient for production, can promote the security of using again;

3. when the refrigerating piece is applied to a high-voltage ion generating device, the metal conducting section in the middle can be used as an electrode or a transition electrode, and can absorb heat to generate dew, and the structure can obviously generate more dew, so that the using effect is better;

4. the composite water ion generating device provided by the utility model adopts the refrigerating piece as the first electrode, which is obviously more convenient to process and has better heat dissipation effect compared with the common device;

5. in the composite water ion generating device, the second electrode is arranged below the first electrode, the two sides of the first electrode are not shielded, the air circulation effect is better, more deposition can be promoted to be placed in an electric field, more nano water ions can be generated, and the composite water ion generating device can be used in medical treatment, disinfection, household appliances, furniture, hairdressing, air purification, pets, traffic, electronic industries and the like, and has a wide application range.

Drawings

FIG. 1 is a schematic view of a conventional semiconductor refrigeration sheet;

figure 2 is a schematic view of the refrigeration unit in a refrigerated form;

figure 3 is a schematic view of a first embodiment of a refrigeration unit;

figure 4 is a schematic view of a second embodiment of a refrigeration unit;

FIG. 5 is a front view of the composite water ion generating device;

FIG. 6 is a side view of the composite water ion generating device;

FIG. 7 is a top view of the composite water ion generating device;

figure 8 is a schematic view of the first embodiment of the refrigeration element in cooperation with a second electrode;

figure 9 is a schematic view of a second embodiment of the refrigeration element in cooperation with a second electrode;

figure 10 is a schematic view of a third embodiment of the refrigeration element in cooperation with a second electrode;

figure 11 is a schematic view of a fourth embodiment of the refrigeration element in cooperation with a second electrode;

figure 12 is a schematic view of a fifth embodiment of the refrigeration element in cooperation with a second electrode;

reference numerals are as follows: 101-N type semiconductor, 102-P type semiconductor, 103-metal conducting section, 2-second electrode, 3-heat dissipation piece, 4-fixing plate, 5-mounting hole and 6-lug boss.

Detailed Description

In the description of the present invention, unless otherwise expressly specified or limited, the terms "disposed" and "in communication" are to be construed broadly, e.g., as meaning in fixed communication, in removable communication, or in integral communication; either mechanically or electrically; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Examples

The present embodiment provides a refrigeration device, as shown in fig. 2-4, which includes a metal conductive segment 103, one end of the metal conductive segment 103 is provided with an N-type semiconductor 101, the other end is provided with a P-type semiconductor 102, and the connection manner between the N-type semiconductor 101, the P-type semiconductor 102 and the metal conductive segment 103 is welding, bonding or embedding, wherein the embedding may be performed by forming a groove between the metal conductive segment 103 and the N-type semiconductor 101, or between the metal conductive segment 103 and the P-type semiconductor 102 for matching with an insertion block, or may be performed in other manners as long as the metal conductive segment 103 can be stably combined with the N-type semiconductor 101 and the P-type semiconductor 102, and cannot easily separate from each other to cause poor contact.

The metal conductive segment 103 may be a cylinder, a sphere, an ellipsoid or a combination thereof, such as a cylinder, a polygon, two ends of a cylinder and a middle of a sphere, which are only examples, and not only such a combination, and the specific structure thereof may be determined according to the use environment or function, of course, the N-type semiconductor and the P-type semiconductor may also be made of other materials or composite materials having thermoelectric effect, and the N-type semiconductor 101 and the P-type semiconductor 102 may be set to any shape, such as a sphere, an ellipse, a cylinder, etc., as long as they can be set at two sides of the metal conductive segment 103 in a substantially symmetrical form. Of course, the N-type semiconductor 101 and the P-type semiconductor 102 are both formed in a cylindrical shape, and only machining is required, so that machining is easier, and operation is more convenient during soldering.

However, in terms of material selection, the metal conductive segment 103 only needs to be a metal capable of conducting electricity, such as copper, stainless steel, alloy, titanium, platinum or tungsten. Of course, it is preferable to wrap the N-type semiconductor 101, the metal conductive segments 103, and the P-type semiconductor 102, which are integrally connected, with an insulating material during production.

In the refrigeration piece, N/P granule subtend and with the post range, the thermal current in the device all is located same axis with the electric current, and when using, N type semiconductor 101, the P type semiconductor 102 heat dissipation at both ends, and the metal conducting segment 103 at middle part absorbs heat and refrigerates, has changed the refrigeration form of current semiconductor refrigeration piece completely for it not only processes, installs more conveniently, when being used for high-pressure ion generator moreover, can produce more accumulations dew.

The embodiment further provides a composite water ion generating device applying the refrigeration member, please refer to fig. 5-7, which includes a second electrode 2, the second electrode 2 is located below the metal conducting segment 103, the N-type semiconductor 101 is connected to the positive electrode of the power supply, the P-type semiconductor 102 is connected to the negative electrode of the power supply to form a current loop, the metal conducting segment 103 is used as a first electrode, the metal conducting segment 103 absorbs heat to expose the surface area of the metal conducting segment 103, and the voltage of the second electrode 2 is greater than the voltage of the metal conducting segment 103, so that an electric field is formed between the first electrode and the second electrode 2 to generate water ions and part of low-temperature plasma. The cooperation form of first electrode and second electrode 2 is favorable to the circulation of air for the first electrode surface is long-pending more easily and is exposed, helps promoting the effect that nanometer water ion produced.

As shown in fig. 8-12, the shapes of the second electrode 2 and the metal conductive segment 103 may be the same or different, and the second electrode 2 may be spherical, ellipsoidal, conical, zigzag, cylindrical or a combination thereof, such as an arc-shaped barbed electrode, a carbon brush electrode, a spherical motor, etc. In addition, experiments show that the metal conductive segment 103 and the end, close to the second electrode 2, of the second electrode 2 are arranged to be in an arc-shaped or spherical structure protruding towards the second electrode 2, so that the surface area of the metal conductive segment 103 can be effectively guided to the middle part of the metal conductive segment, more dew is accumulated in the electric field generated by the first electrode and the second electrode 2, and more nano water ions are generated. Certainly, the second electrode 2 is set to be a sheet-shaped sawtooth or arc-shaped barbed electrode, so that the range of the electric field can be expanded, and the effect of generating the nano water ions is further improved.

In addition, in order to improve the heat dissipation effect of the refrigeration component, the heat dissipation component 3 may be disposed on both the N-type semiconductor 101 and the P-type semiconductor 102, and the heat dissipation component 3 is preferably mounted in a manner that is not easily separated from the N-type semiconductor 101 and the P-type semiconductor 102, such as welding, bonding, embedding, and the like, and then the connection between the heat dissipation component 3 and the N-type semiconductor 101 and the P-type semiconductor 102 is covered by an insulating material, so as to utilize the heat dissipation component 3 to assist in heat dissipation and improve the refrigeration effect of the refrigeration component, wherein the heat dissipation component 3 may be a heat dissipation pipe for convenience of processing, and may be configured in other shapes, such as a rod shape, a strip shape, or other various shapes capable of assisting in heat dissipation, as long as the heat dissipation component can assist the N-type semiconductor 101 and the P-type semiconductor 102 to accelerate the heat dissipation.

As a specific installation mode of the first electrode and the second electrode 2, the second electrode 2 is installed on a fixing plate 4, a mounting hole 5 is formed in the fixing plate 4, the lower end of the insulating material extends outwards to form a boss 6, the boss 6 is inserted into the mounting hole 5 and is fixedly connected with the mounting hole 5, the metal conductive segment 103 is fixed above the second electrode 2, and the number of the mounting holes 5 in the fixing plate 4 is larger, so that the installation structure is used for installing a refrigerating part and can also be used for fixing the whole water ion generating device. Of course, this fixing method is merely an example, and the fixing may be performed in other ways as long as the first electrode and the second electrode 2 are maintained to be oppositely disposed in the up-down relationship, and an electric field is formed between them.

The above description is only for the preferred embodiment of the present invention, and the present invention is not limited thereto, the protection scope of the present invention is defined by the claims, and all structural changes equivalent to the contents of the description and drawings of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. The refrigerating piece is characterized by comprising a metal conducting segment (103), wherein one end of the metal conducting segment (103) is provided with an N-type semiconductor (101), the other end of the metal conducting segment is provided with a P-type semiconductor (102), and the N-type semiconductor (101), the P-type semiconductor (102) and the metal conducting segment (103) are connected in a welding, bonding or embedding mode.

2. A refrigeration element as claimed in claim 1, characterized in that said metallic conductive segments (103) are cylindrical, spheroidal, ellipsoidal or a combination thereof.

3. Refrigeration element according to claim 1, characterized in that said metallic conductive section (103) can be made of copper, stainless steel, alloys, titanium, platinum or tungsten.

4. The refrigeration device as recited in claim 1, characterized in that the whole formed by the N-type semiconductor (101), the metal conducting segment (103) and the P-type semiconductor (102) is wrapped with an insulating material.

5. A composite water ion generating device applying the refrigerating element as claimed in claim 4, characterized by comprising a second electrode (2), wherein the second electrode (2) is positioned below the metal conducting segment (103), the N-type semiconductor (101) is connected with a positive electrode of a power supply, the P-type semiconductor (102) is connected with a negative electrode of the power supply to form a current loop, and the voltage of the second electrode (2) is greater than that of the metal conducting segment (103).

6. The composite water ion generating device according to claim 5, wherein the second electrode (2) is arranged in a spherical shape, an ellipsoidal shape, a conical shape, a sawtooth shape, a cylindrical shape or a combination thereof.

7. The composite water ion generating device according to claim 5, wherein heat dissipation members (3) are arranged on the N-type semiconductor (101) and the P-type semiconductor (102).

8. The composite water ion generating device according to claim 7, wherein the heat dissipating member (3) is a heat dissipating pipe.

9. The composite water ion generating device according to claim 7, wherein the second electrode (2) is mounted on a fixing plate (4), the fixing plate (4) is provided with a mounting hole (5), the lower end of the insulating material extends outwards to form a boss (6), the boss (6) is inserted into the mounting hole (5) and is fixedly connected with the mounting hole (5), and the metal conducting segment (103) is fixed above the second electrode (2).

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