CN216663300U - Silicon carbide substrate processing device - Google Patents
Silicon carbide substrate processing device Download PDFInfo
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- CN216663300U CN216663300U CN202220097756.2U CN202220097756U CN216663300U CN 216663300 U CN216663300 U CN 216663300U CN 202220097756 U CN202220097756 U CN 202220097756U CN 216663300 U CN216663300 U CN 216663300U
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 113
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 91
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000001816 cooling Methods 0.000 claims abstract description 62
- 238000010438 heat treatment Methods 0.000 claims abstract description 57
- 230000007704 transition Effects 0.000 claims abstract description 52
- 238000000137 annealing Methods 0.000 claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 238000005192 partition Methods 0.000 claims description 10
- 230000000712 assembly Effects 0.000 claims description 9
- 238000000429 assembly Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 20
- 238000010583 slow cooling Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- PXBRQCKWGAHEHS-UHFFFAOYSA-N dichlorodifluoromethane Chemical compound FC(F)(Cl)Cl PXBRQCKWGAHEHS-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Abstract
The utility model discloses a silicon carbide substrate processing device, which relates to the technical field of semiconductor material processing and comprises the following components: a heating cavity; the transition cavity is communicated with the heating cavity, and a sample carrying frame and a lifting mechanism are arranged in the transition cavity; the sample carrier is provided with a first side wall and a second side wall which are oppositely arranged, a clamping assembly is arranged between the first side wall and the second side wall and comprises a first clamping piece and a second clamping piece which can be synchronously stretched, and the first clamping piece and the second clamping piece are matched to clamp and release a silicon carbide sample; and the cooling cavity is communicated with the transition cavity. The utility model provides a carborundum substrate processingequipment can realize in the short time with the carborundum sample from the annealing environment of high temperature direct quick place cool down in the low temperature environment, and cooling rate improves by a wide margin, has effectively avoided slow cooling in-process hole and electron to recombine, has effectively improved the resistivity of carborundum substrate, has improved the quality of carborundum substrate.
Description
Technical Field
The utility model relates to the technical field of semiconductor material processing, in particular to a silicon carbide substrate processing device.
Background
Silicon carbide (SiC) is a representative of third-generation novel semiconductor materials, has the characteristics of large forbidden band width, high critical breakdown electric field, high electron mobility, high thermal conductivity and the like, and is widely applied to the fields of high-temperature, high-voltage, high-frequency and high-power semiconductor devices, electronic and electric power devices and the like. In practical applications, the silicon carbide substrate includes two main types, i.e., a conductive substrate with low resistivity and a semi-insulating substrate with high resistivity. At present, a silicon carbide substrate is mostly formed by growing a silicon carbide single crystal ingot by a Physical Vapor Transport (PVT) method and then processing the ingot by a process such as slicing, grinding and polishing. To improve the conductivity properties of silicon carbide substrates, different types and amounts of dopants are often doped during the growth of silicon carbide crystals, however, high concentrations of dopants may form deposits in silicon carbide (SiC) single crystals. Meanwhile, the purity, the thermal field uniformity, the cleanliness of a growth chamber and the like of a silicon carbide (SiC) raw material and a graphite piece can influence crystals and even cause micropipe defects, so that the quality of the substrate is influenced. In addition, in the existing silicon carbide substrate processing device, after the growth of the silicon carbide crystal is finished, slow cooling is often adopted, the cooling rate in the processes is slow, the cooling time is long, holes and electrons in the silicon carbide crystal are easily recombined, and the conductivity and the quality of the silicon carbide substrate are further influenced.
SUMMERY OF THE UTILITY MODEL
1. Technical problem to be solved by the utility model
The utility model provides a silicon carbide substrate processing device, which can realize the rapid cooling of a silicon carbide substrate, effectively improve the resistivity of the silicon carbide substrate and the quality of the silicon carbide substrate, realize continuous and uninterrupted annealing, effectively improve the frequent heating and cooling process in the annealing process and further improve the annealing efficiency, and aims to solve the technical problems that the existing silicon carbide substrate processing device has long cooling time and slow cooling rate, so that the conductivity of the silicon carbide substrate is not ideal and the quality of the silicon carbide substrate is low.
2. Technical scheme
In order to solve the problems, the technical scheme provided by the utility model is as follows:
a silicon carbide substrate processing apparatus comprising: the heating cavity is used for annealing the silicon carbide sample; the transition cavity is arranged below the heating cavity and communicated with the heating cavity, a sample carrying frame and a lifting mechanism are arranged in the transition cavity, and the lifting mechanism is used for driving the sample carrying frame to enter or exit the heating cavity; the sample carrier is provided with a first side wall and a second side wall which are oppositely arranged, a clamping assembly is arranged between the first side wall and the second side wall, the clamping assembly comprises a first clamping piece and a second clamping piece which can be synchronously stretched, the first clamping piece is arranged on the first side wall, the second clamping piece is arranged on the second side wall, and the first clamping piece and the second clamping piece are matched to clamp and release a silicon carbide sample; and the cooling cavity is arranged below the transition cavity and communicated with the transition cavity.
In the transition cavity, controlling the first clamping piece and the second clamping piece to enable the first clamping piece and the second clamping piece to respectively horizontally move towards the direction close to the center of the sample carrier, so as to realize the clamping of the silicon carbide sample, and further enable the silicon carbide sample to be fixed on the sample carrier; controlling the lifting mechanism to drive the sample carrying frame carrying the silicon carbide sample to do ascending motion, and enabling the sample carrying frame to enter the heating cavity from the transition cavity to perform annealing treatment on the silicon carbide sample; after annealing is finished, the first clamping piece and the second clamping piece are controlled to respectively horizontally move towards the direction far away from the center of the sample carrier to release the silicon carbide sample, and the released silicon carbide sample directly enters the cooling cavity from the heating cavity through the transition cavity rapidly under the action of gravity to be cooled; and finally, controlling the lifting mechanism to drive the empty sample carrying frame to move downwards and return to the transition cavity from the heating cavity. Therefore, the silicon carbide substrate processing device can realize direct and quick placement of a silicon carbide sample in a high-temperature annealing environment in a short time in a low-temperature environment for cooling, greatly improves the cooling rate, effectively avoids recombination of holes and electrons in a slow cooling process, effectively improves the resistivity of a silicon carbide substrate, improves the conductivity of the silicon carbide substrate, and further improves the quality of the silicon carbide substrate. Simultaneously, the carborundum substrate processingequipment of this application also can realize continuous uninterrupted annealing and quick cooling, has effectively improved the process of frequent intensification cooling among the annealing process, has improved annealing efficiency.
Optionally, the first clamping piece and the second clamping piece both comprise a telescopic mechanism and a clamping jaw, and the telescopic mechanism is connected with the clamping jaw.
Optionally, the telescopic mechanism includes a transformer container and a telescopic rod, the transformer container is disposed in the first side wall or the second side wall, one end of the telescopic rod is connected with the transformer container, the other end of the telescopic rod is connected with the clamping jaw, and the transformer container is used for driving the telescopic rod to stretch.
Optionally, the interior of the sample loading frame is communicated with the cooling cavity, the bottom of the sample loading frame is of a cylindrical structure, the first side wall and the second side wall are both of arc-shaped structures, and a center line between the first side wall and the second side wall is coincident with a center line of the bottom of the sample loading frame.
Optionally, the clamping assemblies have multiple groups, the multiple groups of clamping assemblies are sequentially arranged between the first side wall and the second side wall at intervals from top to bottom, and adjacent clamping assemblies are arranged in parallel.
Optionally, a guide channel is arranged between the transition cavity and the cooling cavity, and a gate valve is arranged on the guide channel.
Optionally, still include plasma generator, plasma generator locates on the heating chamber, plasma generator with be equipped with the baffle valve between the heating chamber.
Optionally, a partition valve is arranged between the heating cavity and the transition cavity.
Optionally, the transition chamber further comprises a vacuum pipeline, and the vacuum pipeline is communicated with the transition chamber.
Optionally, the heating chamber is communicated with the heating chamber through a gas supply device.
3. Advantageous effects
Compared with the prior art, the technical scheme provided by the utility model has the following beneficial effects:
(1) the embodiment of the application provides a carborundum substrate processingequipment, simple structure, it can realize in the short time with the carborundum sample from the annealing environment of high temperature direct quick place cool cooling in the low temperature environment, cooling rate improves by a wide margin, has effectively avoided slow cooling in-process hole and electron to recombine, has effectively improved the resistivity of carborundum substrate, has improved the electric conductive property of carborundum substrate, and then has improved the quality of carborundum substrate. Simultaneously, the carborundum substrate processingequipment of this application also can realize continuous uninterrupted annealing and quick cooling, has effectively improved the process of frequent intensification cooling among the annealing process, has improved annealing efficiency.
(2) The embodiment of the application provides a carborundum substrate processingequipment, through setting up carry the appearance frame inside with the cooling chamber is linked together, the bottom of carrying the appearance frame is the drum structure, first lateral wall with the second lateral wall is arc structure, first lateral wall with central line between the second lateral wall and the coincidence of the bottom central line of carrying the appearance frame. The sample loading frame with the structure is convenient for adjusting and fixing the position of the silicon carbide sample, and simultaneously is convenient for ensuring that the silicon carbide sample released by the first clamping piece and the second clamping piece can smoothly enter the cooling cavity to be rapidly cooled.
(3) The embodiment of the application provides a carborundum substrate processingequipment, through the transition chamber with set up the direction passageway between the cooling chamber, can let the carborundum sample of release smooth entering into the cooling chamber in. Meanwhile, the gate valve is arranged to realize the communication and the partition between the transition cavity and the cooling cavity; before the silicon carbide sample to be treated enters the cooling cavity, the gate valve is generally opened, and the transition cavity is communicated with the cooling cavity; after the carborundum sample entered into the cooling chamber, the control push-pull valve was closed, and the transition chamber separates with the cooling chamber this moment, and this setting can effectively avoid the interference of transition chamber and other factors to the cooling chamber, further improves cooling efficiency.
(4) According to the silicon carbide substrate processing device provided by the embodiment of the application, the plasma generator is arranged for carrying out plasma process treatment on a silicon carbide sample; the partition plate valve is used for communicating and separating the plasma generator and the heating cavity, so that the heating cavity and the plasma generator can work in a matched manner or independently, and the mutual interference among the cavities is avoided; meanwhile, a partition plate valve is arranged for communicating and separating the transition cavity and the heating cavity; the heating cavity and the transition cavity can work in a matched mode or independently, and mutual interference among the processes of the cavities is avoided.
(5) The embodiment of the application provides a carborundum substrate processingequipment sets up the vacuum pipeline and is used for carrying out the evacuation to the cavity, because heating chamber and cold district chamber all are linked together with the transition chamber, consequently, the vacuum pipeline can realize the evacuation operation in the whole processingequipment, provides vacuum environment, guarantees whole carborundum substrate processingequipment's cleanliness.
Drawings
Fig. 1 is a schematic structural diagram of a silicon carbide substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional view of an apparatus for processing a silicon carbide substrate according to an embodiment of the present invention.
Fig. 3 is a top view of the lifting mechanism and the sample carrier in the transition chamber according to the embodiment of the present invention.
Fig. 4 is a cross-sectional view of the lifting mechanism and the sample carrier in the transition chamber according to the embodiment of the present invention.
Detailed Description
For a further understanding of the present invention, reference will now be made in detail to the embodiments illustrated in the drawings.
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not to be construed as limiting the utility model. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings. The terms first, second, and the like in the present invention are provided for convenience of describing the technical solution of the present invention, and have no specific limiting effect, but are all generic terms, and do not limit the technical solution of the present invention. It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art. The technical solutions in the same embodiment and the technical solutions in different embodiments can be arranged and combined to form a new technical solution without contradiction or conflict, and the technical solutions are within the scope of the present invention.
Example 1
With reference to fig. 1 to 4, the present embodiment provides a silicon carbide substrate processing apparatus, including: the heating device comprises a heating cavity 1, a heating device and a control device, wherein the heating cavity 1 is used for annealing a silicon carbide sample 22; the transition cavity 2 is arranged below the heating cavity 1, the transition cavity 2 is communicated with the heating cavity 1, a sample carrying rack 3 and a lifting mechanism 4 are arranged in the transition cavity 2, and the lifting mechanism 4 is used for driving the sample carrying rack 3 to enter or exit the heating cavity 1; the sample carrier 3 is provided with a first side wall 5 and a second side wall 6 which are oppositely arranged, a clamping assembly is arranged between the first side wall 5 and the second side wall 6 and comprises a first clamping piece 7 and a second clamping piece 8 which can be synchronously stretched, the first clamping piece 7 is arranged on the first side wall 5, the second clamping piece 8 is arranged on the second side wall 6, and the first clamping piece 7 and the second clamping piece 8 are matched to clamp and release a silicon carbide sample 22; and the cooling cavity 9 is arranged below the transition cavity 2, and the cooling cavity 9 is communicated with the transition cavity 2.
In the transition cavity 2, controlling the first clamping member 7 and the second clamping member 8 to enable the first clamping member 7 and the second clamping member 8 to respectively move horizontally towards the direction close to the center of the sample carrier 3, so as to clamp the silicon carbide sample 22, and further enable the silicon carbide sample 22 to be fixed on the sample carrier 3; controlling the lifting mechanism 4 to drive the sample carrier 3 carrying the silicon carbide sample 22 to do lifting motion, and entering the heating cavity 1 from the transition cavity 2 to perform annealing treatment on the silicon carbide sample 22; after annealing is finished, the first clamping piece 7 and the second clamping piece 8 are controlled to respectively horizontally move towards the direction far away from the center of the sample carrier 3 to release the silicon carbide sample 22, and the released silicon carbide sample 22 directly enters the cooling cavity 9 from the heating cavity 1 through the transition cavity 2 and quickly to be cooled under the action of gravity; and finally, controlling the lifting mechanism 4 to drive the empty sample carrying rack 3 to move downwards and return to the transition cavity 2 from the heating cavity 1. Therefore, the silicon carbide substrate processing device can realize direct and quick placement of the silicon carbide sample 22 in a high-temperature annealing environment in a short time in a low-temperature environment for cooling, greatly improves the cooling rate, effectively avoids recombination of holes and electrons in a slow cooling process, effectively improves the resistivity of the silicon carbide substrate, improves the conductivity of the silicon carbide substrate, and further improves the quality of the silicon carbide substrate. Simultaneously, the carborundum substrate processingequipment of this application also can realize continuous uninterrupted annealing and quick cooling, has effectively improved the process of frequent intensification cooling among the annealing process, has improved annealing efficiency.
In practical application, the heating chamber 1 is provided with the heater coil 10, and the heater coil 10 is arranged for heating the heating chamber 1, so as to provide a high-temperature annealing environment. A cooling container 11 is arranged in the cooling cavity 9, and a refrigerant 12 is arranged in the cooling container 11. The cooling container 11 is provided with a refrigerant inlet and a refrigerant outlet. The refrigerant inlet is arranged at the bottom of the cooling container 11, and the refrigerant outlet is arranged at the top of the cooling container 11. In practice, the refrigerant 12 may be liquid nitrogen or methyl silicone oil.
Example 2
With reference to fig. 4, compared with the technical solution of embodiment 1, the silicon carbide substrate processing apparatus of this embodiment may be improved as follows: first holder 7 with second holder 8 all includes telescopic machanism and clamping jaw 13, telescopic machanism with clamping jaw 13 is connected, sets up telescopic machanism is used for driving clamping jaw 13 and is reciprocal linear motion, clamping jaw 13 is used for centre gripping silicon carbide substrate.
Example 3
With reference to fig. 4, compared with the technical solution of embodiment 2, the silicon carbide substrate processing apparatus of this embodiment may be improved as follows: the telescopic mechanism comprises a transformation container 14 and a telescopic rod 15, the transformation container 14 is arranged in the first side wall 5 or the second side wall 6, one end of the telescopic rod 15 is connected with the transformation container 14, the other end of the telescopic rod 15 is connected with the clamping jaw 13, and the transformation container 14 is used for driving the telescopic rod 15 to stretch.
In practical application, the device further comprises an inflating device (not shown in the figure) and an exhausting device (not shown in the figure), wherein the inflating device and the exhausting device are both communicated with the pressure transformation container 14, the pressure in the container is changed by inflating and exhausting the pressure transformation container 14, and then the expansion and contraction of the expansion link 15 are realized, so that the clamping jaw 13 is driven to move, and the clamping and releasing of the silicon carbide sample 22 are realized.
In practical application, the telescopic mechanism may be a cylinder.
In practical use, the end surface of the clamping jaw 13 close to the silicon carbide sample 22 is a circular arc surface.
Example 4
With reference to fig. 3-4, compared with the solution of embodiment 1, the silicon carbide substrate processing apparatus of this embodiment can be improved as follows: the interior of the sample loading frame 3 is communicated with the cooling cavity 9, the bottom of the sample loading frame 3 is of a cylindrical structure, the first side wall 5 and the second side wall 6 are both of arc-shaped structures, and a central line between the first side wall 5 and the second side wall 6 is superposed with a central line at the bottom of the sample loading frame 3. The sample loading frame 3 with the structure is convenient for adjusting and fixing the position of the silicon carbide sample 22, and simultaneously is convenient for ensuring that the silicon carbide sample 22 released by the first clamping piece 7 and the second clamping piece 8 can smoothly enter the cooling cavity 9 for rapid cooling.
Example 5
With reference to fig. 4, compared with the technical solution of embodiment 1, the silicon carbide substrate processing apparatus of this embodiment may be improved as follows: the clamping assemblies are provided with a plurality of groups, the clamping assemblies are arranged between the first side wall 5 and the second side wall 6 at intervals from top to bottom in sequence, and adjacent clamping assemblies are arranged in parallel. When centre gripping carborundum sample 22, the multiunit the carborundum sample 22 is placed from top to bottom in proper order to the centre gripping subassembly, and when releasing carborundum sample 22, the multiunit the centre gripping subassembly is released carborundum sample 22 from bottom to top in proper order, and the interval of release can be for 1 second for carborundum sample 22 enters into in the cooling chamber 9 in proper order. This setting can be adjusted as required, carries out the annealing and the quick cooling of a plurality of carborundum samples 22 simultaneously, improves the machining efficiency of carborundum substrate.
Example 6
With reference to fig. 1-2, compared with the solution of embodiment 1, the silicon carbide substrate processing apparatus of this embodiment can be improved as follows: a guide channel 16 is arranged between the transition cavity 2 and the cooling cavity 9, and a gate valve 17 is arranged on the guide channel 16. The transition cavity 2 is communicated with the cooling cavity 9 through a guide channel 16, and the guide channel 16 is arranged to enable the released silicon carbide sample 22 to smoothly enter the cooling cavity 9. Meanwhile, the gate valve 17 is arranged to realize the communication and the partition between the transition cavity 2 and the cooling cavity 9. In practical application, before the silicon carbide sample 22 to be processed enters the cooling cavity 9, the gate valve 17 is generally opened, and the transition cavity 2 is communicated with the cooling cavity 9; after the silicon carbide sample 22 enters the cooling cavity 9, the gate valve 17 is controlled to be closed, the transition cavity 2 is separated from the cooling cavity 9, the interference of the transition cavity 2 and other factors to the cooling cavity 9 can be effectively avoided through the arrangement, and the cooling efficiency is further improved.
Example 7
With reference to fig. 1-2, the silicon carbide substrate processing apparatus of this embodiment can be improved as follows compared with the solution of any one of embodiments 1-6: the plasma generator 18 is arranged on the heating cavity 1, and a partition plate valve is arranged between the plasma generator 18 and the heating cavity 1. The plasma generator 18 is configured to perform a plasma process on a silicon carbide sample 22; the partition plate valve is used for communicating and separating the plasma generator 18 and the heating cavity 1, so that the heating cavity 1 and the plasma generator 18 can work cooperatively and independently, and mutual interference among the cavities is avoided.
Example 8
Compared with the technical scheme of the embodiment 7, the silicon carbide substrate processing device of the embodiment can be improved as follows: a partition plate valve (not marked in the figure) is arranged between the heating cavity 1 and the transition cavity 2, and is used for communicating and separating the transition cavity 2 and the heating cavity 1; the heating cavity 1 and the transition cavity 2 can work cooperatively or independently, and mutual interference among the processes of the cavities is avoided.
In actual use, the partition plate valve and the gate valve 17 belong to the prior art, and therefore, the detailed description is omitted.
Example 9
With reference to fig. 2, compared with the technical solution of embodiment 1, the silicon carbide substrate processing apparatus of this embodiment may be improved as follows: the vacuum pipeline 20 is further included, and the vacuum pipeline 20 is communicated with the transition cavity 2. The vacuum pipeline 20 is used for vacuumizing the device cavity, and the heating cavity 1 and the cooling cavity 9 are communicated with the transition cavity 2, so that the vacuum pipeline 20 can realize the vacuumizing operation of the cavity in the whole processing device, provide a vacuum environment and ensure the cleanliness of the whole silicon carbide substrate processing device.
Example 10
Compared with the technical scheme of the embodiment 1, the silicon carbide substrate processing device of the embodiment can be improved as follows: an air supply device (not shown) is also included, which is in communication with the heating chamber 1. The gas supply device is used for providing annealing atmosphere into the heating cavity 1, the annealing atmosphere is inert gas or reaction atmosphere, and the reaction atmosphere can be N2、H2、CH4、SiH4. In practical application, be equipped with air inlet 21 on the heating chamber, air inlet 21 with air feeder is linked together for let in annealing atmosphere in heating chamber 1. In practice, the top of the heating chamber 1 is provided with a baffle valve, which when closed can serve as an upper end cover of the heating chamber 1 to close, and when opened, can communicate the heating chamber 1 and the plasma generator 18 for performing plasma process treatment on the silicon carbide sample 22 in the heating chamber 1.
The present invention and its embodiments have been described above schematically, without limitation, and what is shown in the drawings is only one of the embodiments of the present invention, and the actual structure is not limited thereto. Therefore, if the person skilled in the art receives the teaching, without departing from the spirit of the utility model, the person skilled in the art shall not inventively design the similar structural modes and embodiments to the technical solution, but shall fall within the scope of the utility model.
Claims (10)
1. A silicon carbide substrate processing apparatus, comprising:
the heating cavity is used for annealing the silicon carbide sample;
the transition cavity is arranged below the heating cavity and communicated with the heating cavity, a sample carrying frame and a lifting mechanism are arranged in the transition cavity, and the lifting mechanism is used for driving the sample carrying frame to enter or exit the heating cavity; the sample carrier is provided with a first side wall and a second side wall which are oppositely arranged, a clamping assembly is arranged between the first side wall and the second side wall, the clamping assembly comprises a first clamping piece and a second clamping piece which can be synchronously stretched, the first clamping piece is arranged on the first side wall, the second clamping piece is arranged on the second side wall, and the first clamping piece and the second clamping piece are matched to clamp and release a silicon carbide sample;
and the cooling cavity is arranged below the transition cavity and communicated with the transition cavity.
2. The silicon carbide substrate processing apparatus of claim 1, wherein the first and second clamping members each comprise a telescoping mechanism and a clamping jaw, the telescoping mechanism being coupled to the clamping jaw.
3. The silicon carbide substrate processing apparatus according to claim 2, wherein the expansion mechanism comprises a transformer tank and an expansion link, the transformer tank is disposed in the first sidewall or the second sidewall, one end of the expansion link is connected to the transformer tank, the other end of the expansion link is connected to the clamping jaw, and the transformer tank is configured to drive the expansion link to expand and contract.
4. The silicon carbide substrate processing apparatus according to claim 1, wherein the interior of the sample carrier communicates with the cooling chamber, the bottom of the sample carrier has a cylindrical structure, the first side wall and the second side wall have an arc-shaped structure, and a center line between the first side wall and the second side wall coincides with a center line of the bottom of the sample carrier.
5. The silicon carbide substrate processing apparatus according to claim 1, wherein the clamping assemblies have a plurality of sets, the plurality of sets of clamping assemblies are arranged at intervals in sequence from top to bottom between the first side wall and the second side wall, and adjacent sets of clamping assemblies are arranged in parallel.
6. The silicon carbide substrate processing apparatus according to claim 1, wherein a guide channel is provided between the transition chamber and the cooling chamber, and a gate valve is provided on the guide channel.
7. The silicon carbide substrate processing apparatus of any one of claims 1-6, further comprising a plasma generator disposed on the heating chamber, wherein a baffle valve is disposed between the plasma generator and the heating chamber.
8. The silicon carbide substrate processing apparatus of claim 7, wherein a partition valve is disposed between the heating chamber and the transition chamber.
9. The silicon carbide substrate processing apparatus of claim 1, further comprising a vacuum conduit in communication with the transition chamber.
10. The silicon carbide substrate processing apparatus according to claim 1, further comprising a gas supply means communicating with the heating chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220097756.2U CN216663300U (en) | 2022-01-14 | 2022-01-14 | Silicon carbide substrate processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220097756.2U CN216663300U (en) | 2022-01-14 | 2022-01-14 | Silicon carbide substrate processing device |
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| CN216663300U true CN216663300U (en) | 2022-06-03 |
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| CN202220097756.2U Active CN216663300U (en) | 2022-01-14 | 2022-01-14 | Silicon carbide substrate processing device |
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