CN216600176U

CN216600176U - DPC box dam ceramic substrate

Info

Publication number: CN216600176U
Application number: CN202122863849.XU
Authority: CN
Inventors: 袁广; 罗素扑; 黄嘉铧
Original assignee: Huizhou Xinci Semiconductor Co ltd
Current assignee: Huizhou Xinci Semiconductor Co ltd
Priority date: 2021-11-22
Filing date: 2021-11-22
Publication date: 2022-05-24
Anticipated expiration: 2031-11-22

Abstract

The utility model discloses a DPC (planar code division multiple Access) surrounding dam ceramic substrate, which comprises a DPC ceramic substrate, wherein the DPC ceramic substrate is provided with a front side and a back side which are arranged at opposite sides, an upper circuit layer and a lower circuit layer are arranged on the DPC ceramic substrate, the DPC ceramic substrate is provided with a circuit layer arrangement area and a process frame area surrounding the circuit layer arrangement area, the upper circuit layer and the lower circuit layer are positioned in the circuit layer arrangement area, the upper surface of the upper circuit layer is provided with a plurality of metal surrounding dams which are arranged at intervals, the back side of the DPC ceramic substrate is provided with a process frame thickening layer corresponding to the process frame area, the process frame thickening layer is higher than a back metal layer, through the design of the process frame thickening layer, the front side stress of the DPC ceramic substrate is balanced by using the process frame thickening layer, the back side circuit is thinned, and the whole thickness of a product structure is reduced.

Description

DPC box dam ceramic substrate

Technical Field

The utility model relates to the technical field of ceramic substrates, in particular to a DPC (DPC) box dam ceramic substrate).

Background

For an optical device requiring hermetic package at present, a dam is generally required to be disposed on a ceramic substrate, and a containing space formed by the dam is filled with package glue, so as to achieve better hermetic package. In the prior art, when the DPC process is adopted to manufacture the 3D box dam, in order that the whole ceramic substrate is not deformed or the deformation amount meets the standard, the back line balances the front stress through thickening, the whole thickness of the product structure is too thick, and the whole thickness requirement of the 3D box dam ceramic substrate used in some special fields cannot be met.

Therefore, a new technical solution is needed to solve the above problems.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention is directed to the defects in the prior art, and the main object of the present invention is to provide a DPC box dam ceramic substrate, which mainly solves the problem that the thickness of the back side line structure in the conventional technology is too thick, and the requirement of the overall thickness of the 3D box dam ceramic substrate in some special fields cannot be met through the design of the process frame thickening layer.

In order to achieve the purpose, the utility model adopts the following technical scheme:

the DPC ceramic substrate is provided with an upper circuit layer and a lower circuit layer, the upper circuit layer and the lower circuit layer are respectively arranged on the front surface and the back surface of the DPC ceramic substrate, the DPC ceramic substrate is provided with a circuit layer arrangement area and a process frame area surrounding the circuit layer arrangement area, the upper circuit layer and the lower circuit layer are located in the circuit layer arrangement area, the upper surface of the upper circuit layer is provided with a plurality of metal dams arranged at intervals, the back surface of the DPC ceramic substrate is provided with a process frame thickening layer corresponding to the process frame area, and the process frame thickening layer is higher than a back metal layer.

As a preferable scheme, the process frame area is an annular area.

As a preferable scheme, the process frame thickening layer is of an annular structure.

Preferably, the DPC ceramic substrate is an aluminum nitride ceramic, an aluminum oxide ceramic, a silicon nitride ceramic, or an aluminum silicon carbon ceramic.

Preferably, the peripheral side surface of the process frame thickening layer is flush with the peripheral side surface of the process frame area of the DPC ceramic substrate.

As a preferable scheme, the process frame thickening layer is a metal plating layer.

Compared with the prior art, the method has obvious advantages and beneficial effects, and particularly, according to the technical scheme, the method mainly utilizes the process frame thickening layer to balance the front stress of the DPC ceramic substrate through the design of the process frame thickening layer, does not need thickening the back line like the traditional technology, thins the back line, thins the whole thickness of the product structure, and effectively solves the problem that the back line structure is too thick in the traditional technology and cannot meet the whole thickness requirement of the 3D box dam ceramic substrate used in some special fields.

To more clearly illustrate the structural features and effects of the present invention, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

Drawings

FIG. 1 is a perspective view of an embodiment of the present invention;

FIG. 2 is a front view of an embodiment of the present invention;

FIG. 3 is another perspective view of an embodiment of the present invention;

FIG. 4 is a bottom view of an embodiment of the present invention;

FIG. 5 is a cross-sectional view of an embodiment of the present invention.

The attached drawings indicate the following:

10. DPC ceramic substrate 11, upper line layer

12. Lower wiring layer 13, wiring layer layout area

14. Craft frame area 15, craft frame thickening layer

16. A metal box dam.

Detailed Description

Referring to fig. 1 to 5, specific structures of embodiments of the present invention are shown.

In the description of the present invention, it should be noted that, for the orientation words, such as the terms "upper", "lower", "front", "rear", "left", "right", etc., indicating the orientation and positional relationship based on the orientation or positional relationship shown in the drawings, are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation and operation, and should not be construed as limiting the specific scope of the present invention.

A DPC box dam ceramic substrate comprising a DPC ceramic substrate 10, the DPC ceramic substrate 10 having a front surface and a back surface disposed at opposite sides, the DPC ceramic substrate 10 having an upper wiring layer 11 and a lower wiring layer 12 disposed thereon, the upper wiring layer 11 and the lower wiring layer 12 being disposed on the front surface and the back surface of the DPC ceramic substrate 10, respectively, wherein: the DPC ceramic substrate 10 is provided with a circuit layer arrangement area 13 and a process frame area 14 surrounding the circuit layer arrangement area 13, the upper circuit layer 11 and the lower circuit layer 12 are located in the circuit layer arrangement area 13, the upper surface of the upper circuit layer 11 is provided with a plurality of metal dams 16 which are arranged at intervals, a process frame thickening layer 15 is arranged on the back surface of the DPC ceramic substrate 10 corresponding to the process frame area 14, and the process frame thickening layer 15 is higher than a back metal layer.

Preferably, the DPC ceramic substrate 10 is an aluminum nitride ceramic or an aluminum oxide ceramic or a silicon nitride ceramic or an aluminum silicon carbon ceramic or other ceramics.

In this embodiment, the process frame region 14 is an annular region, the process frame thickening layer 15 is a metal plating layer, the process frame thickening layer 15 is an annular structure, and a peripheral side surface of the process frame thickening layer 15 is flush with a peripheral side surface of the process frame region 14 of the DPC ceramic substrate 10.

The position of the dam body of the metal dam 16 corresponding to the groove is thinned, and according to the mechanical principle: after grooving, the stress of the metal dam 16 increases; at the same slot width, the stress presentation of the metal dam 16 increases as the slot depth increases; at the same slot depth, the measured stress of the metal dam 16 is also presented in an increasing trend as the slot width increases. Stress is relieved after 4 hours at 100 ℃, and the workpiece is put into a thermal ageing furnace for heat treatment by the most traditional method to slowly relieve the stress.

Detailed description the process flow of this example is as follows:

plating a layer of metal on the DPC ceramic substrate 10; then, the metal box dam 16 and the back process frame thickening (generally a metal plating layer) are carried out to form a process frame thickening layer 15, then, pre-baking is carried out for releasing stress at 100 ℃ for 4 hours, then, the process frame thickening layer 15 is cut, and finally, solder mask manufacturing is carried out.

The design of the utility model is characterized in that the front stress of the DPC ceramic substrate is balanced by the process frame thickening layer through the design of the process frame thickening layer, the back circuit is not required to be thickened like the traditional technology, the back circuit is thinned, the whole thickness of the product structure is thinned, and the problem that the whole thickness requirement of the 3D box dam ceramic substrate in some special fields cannot be met due to the fact that the back circuit structure is too thick in the traditional technology is effectively solved.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the technical scope of the present invention, so that any minor modifications, equivalent changes and modifications made to the above embodiment according to the technical spirit of the present invention are within the technical scope of the present invention.

Claims

1. A DPC box dam ceramic substrate comprising a DPC ceramic substrate having a front surface and a back surface disposed on opposite sides, the DPC ceramic substrate having an upper wiring layer and a lower wiring layer disposed on the DPC ceramic substrate, the upper wiring layer and the lower wiring layer being disposed on the front surface and the back surface of the DPC ceramic substrate, respectively, wherein: the DPC ceramic substrate is provided with a circuit layer arrangement area and a process frame area surrounding the circuit layer arrangement area, the upper circuit layer and the lower circuit layer are located in the circuit layer arrangement area, the upper surface of the upper circuit layer is provided with a plurality of metal surrounding dams arranged at intervals, a process frame thickening layer is arranged on the back face of the DPC ceramic substrate corresponding to the process frame area, and the process frame thickening layer is higher than the back metal layer.

2. The DPC box dam ceramic substrate of claim 1, wherein: the process frame area is an annular area.

3. The DPC box dam ceramic substrate of claim 2, wherein: the process frame thickening layer is of an annular structure.

4. The DPC box dam ceramic substrate of claim 1, wherein: the DPC ceramic substrate is aluminum nitride ceramic, aluminum oxide ceramic, silicon nitride ceramic or aluminum silicon carbon ceramic.

5. The DPC box dam ceramic substrate of claim 3, wherein: the peripheral side surface of the process frame thickening layer is flush with the peripheral side surface of the process frame area of the DPC ceramic substrate.

6. The DPC box dam ceramic substrate of claim 1, wherein: the technological frame thickening layer is a metal coating.