CN216550160U - A processing equipment for AG glass - Google Patents
A processing equipment for AG glass Download PDFInfo
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- CN216550160U CN216550160U CN202122603021.0U CN202122603021U CN216550160U CN 216550160 U CN216550160 U CN 216550160U CN 202122603021 U CN202122603021 U CN 202122603021U CN 216550160 U CN216550160 U CN 216550160U
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Abstract
The utility model provides processing equipment for AG glass, which comprises a process chamber with a gate valve, a turntable capable of being installed on the turntable, a plasma generating device, a bias device and a vacuum device for vacuumizing the process chamber, wherein the turntable is arranged on the turntable; the rotary table is arranged in the central area of the process chamber, and the rotary frame is provided with a mounting surface for mounting a glass substrate to be processed; the plasma generating device is arranged on the side wall of the process chamber and is provided with a gas source inlet, a cleaning gas source and an etching gas source can supply gas for the plasma generating device, the cleaning gas source comprises an inert gas source, and the etching gas source comprises an inert gas source and a fluorine-containing gas source; the bias device is capable of forming a bias voltage between the plasma generation device and the turret. By adopting the processing equipment, the AG glass can be manufactured by utilizing the glass substrate with high efficiency and no pollution, and the manufactured AG glass has uniform anti-dazzle surface concave-convex structure and good resolution.
Description
Technical Field
The utility model relates to the technical field of glass processing, in particular to processing equipment for AG glass.
Background
On the display screens of electronic devices such as drawing boards, electronic whiteboards, electronic blackboards, etc., if there is strong reflected light, it will cause interference to users, resulting in that users cannot see the screens clearly, therefore, the display screens of these electronic devices are often covered with glass cover plates made of anti-glare glass. The Anti-glare glass is also called AG (Anti-glass) glass, and the principle is that a smooth glass light-reflecting surface is changed into an uneven rough surface by roughening the surface of the glass, and the presented effect is to convert a glass surface mirror surface into a matte surface, so that light irradiating a screen is subjected to diffuse reflection, the intensity of reflected light is reduced, the Anti-glare effect is realized, eyes are protected, and objects are clearly seen.
The anti-glare glass can be realized by a spraying or sand blasting way, wherein the spraying way is that particles such as submicron silicon dioxide and the like are uniformly coated on the surface of the glass in a clean environment, and then a particle layer is formed on the surface of the glass through heating and curing treatment to generate diffuse reflection on light so as to achieve the anti-glare effect; the sand blasting method is to use compressed air as power to spray sand materials such as carborundum and the like on the surface of the glass at a high speed so as to generate an AG effect of a rough surface.
The surface of AG glass that above-mentioned two kinds of modes formed is unsmooth inhomogeneous, and surface roughness is inhomogeneous, and glass resolution descends, can only cause the matte effect, and the homogeneity of optical transmittance and roughness is relatively poor, and there is the problem of fastness and weatherability etc. in the coating, consequently can only be applied to decorate, when being applied to the higher display screen of some resolutions and using, for example 4K or 8K's display screen, still can produce the flash point phenomenon, seriously influences the visual effect of screen. Although some manufacturers propose to form AG glass by chemical etching, that is, the glass surface is changed from a smooth surface to a surface of micron-sized particles by a chemical reaction, and the glass substrate is subjected to a combined action of various reactions such as chemical reaction, dissolution, recrystallization, ion replacement and the like in a chemical solvent to generate an AG rough surface effect, the process needs chemical substances such as hydrofluoric acid, hydrochloric acid, sulfuric acid and the like, and harmful substances such as acidic gas, acidic liquid, acidic solid and the like are also generated in the production process, and the generated fluorine-containing gas has great harm to human bodies and serious environmental pollution.
SUMMERY OF THE UTILITY MODEL
Based on the above situation, the main object of the present invention is to provide a processing apparatus for AG glass, so as to solve the problems of poor particle uniformity and flash point generation of the anti-glare surface manufactured by the existing processing apparatus.
In order to achieve the purpose, the technical scheme adopted by the utility model is as follows:
a first aspect of the present invention provides a processing apparatus for AG glass, comprising a process chamber having a gate valve, a turntable rotatable within the process chamber, a turret mountable to the turntable, first and second plasma generating means, biasing means, and vacuum means for evacuating the process chamber;
the rotary table is arranged in the central area of the process chamber, and the side surface of the rotary table is provided with a mounting surface for mounting a glass substrate to be processed;
each plasma generating device is arranged on the side wall of the process chamber, the working surface of each plasma generating device faces the side surface of the rotating frame, each first plasma generating device is provided with a first gas source inlet, each first gas source inlet is connected with a cleaning gas source, and each cleaning gas source comprises an inert gas source; the second plasma generating device is provided with a second gas source inlet, the second gas source inlet is connected with an etching gas source, and the etching gas source comprises an inert gas source and a fluorine-containing gas source; the positive pole of the biasing device is connected with the cavity wall of the process chamber, and the negative pole of the biasing device is connected with the rotating frame.
Preferably, the connection part of the vacuum device and the process chamber is disposed opposite to the gate valve, and a plurality of the first plasma generating devices and a plurality of the second plasma generating devices are respectively arranged along the circumferential direction of the process chamber at both sides of the opposite direction.
A second aspect of the present invention provides a processing apparatus for AG glass, comprising a process chamber having a gate valve, a turntable rotatable within the process chamber, a turret mountable to the turntable, plasma generating means, biasing means, and vacuum means for evacuating the process chamber;
the rotary table is arranged in the central area of the process chamber, and the side surface of the rotary table is provided with a mounting surface for mounting a glass substrate to be processed;
the plasma generating device is arranged on the side wall of the process chamber, the working surface of the plasma generating device faces the side surface of the rotating frame, the plasma generating device is provided with a gas source inlet, the gas source inlet can be selectively communicated with a cleaning gas source and an etching gas source, the cleaning gas source comprises an inert gas source, and the etching gas source comprises an inert gas source and a fluorine-containing gas source; the positive pole of the biasing device is connected with the cavity wall of the process chamber, and the negative pole of the biasing device is connected with the rotating frame.
Preferably, the plasma generating device is distributed along the circumference of the process chamber.
Preferably, the processing tool has a plasma cleaning state and a plasma etching state,
in the plasma cleaning state, a background vacuum of the process chamber is less than or equal to 8.0 x10-4Pa, working pressure of 1.0 x10-1-3 Pa; the power of the plasma generating device is 1.5-5 kW, and the frequency is 13.56 MHz; the inert gas supply flow of the cleaning gas source is 150 sccm-500 sccm;
in the plasma etch state, a background vacuum of the process chamber is less than or equal to 8.0 x10-4Pa, the working air pressure is 1 Pa-60 Pa; the power of the plasma generating device is 1.5-5 kW; the frequency is 13.56MHz, and the etching time is 20-40 min; the bias voltage of the bias device is 400-1800V, the power is 1.5-4.5 kW, and the frequency is 13.56 MHz; the ratio of the inert gas of the etching gas source to the fluorine-containing gas is 9: 1-2: 1.
Preferably, a mounting flange is arranged outside the side wall of the process chamber, and the mounting flange is provided with a mounting hole penetrating through the side wall; the plasma generating device is an inductive coupling plasma generating device and comprises a radio frequency source and an ion source body which are connected with each other, the radio frequency source is installed on the installation flange, the ion source body is provided with an air source inlet and an air source outlet, the ion source body penetrates through the installation hole and extends into the process chamber, and the air source outlet faces the rotating frame.
Preferably, the cleaning gas source and the etching gas source both further comprise an oxygen source, and the gas supply flow of the oxygen source is 0-200 sccm.
Preferably, the rotating frame is a polyhedral prism structure, and each prism surface of the prism structure forms the mounting surface.
Preferably, when the rotating frame rotates to a state that the mounting surface is opposite to the plasma generating device, the distance between the mounting surface and the plasma generating device is 20-80 mm.
Preferably, the rotating speed of the rotating platform is 10-100 revolutions per minute.
[ PROBLEMS ] the present invention
When the processing equipment processes a glass substrate to be processed, firstly controlling a plasma generating device in a process chamber to work independently, a bias device to not work, forming plasma after inert gas of a cleaning gas source passes through the plasma generating device, carrying out physical sputtering on the surface to be processed of the glass substrate so as to remove pollutants on the surface to be processed, then controlling the plasma generating device and the bias device in the process chamber to work simultaneously, forming a large number of high-energy active ions under the bias of the bias device by the inert gas and fluorine-containing gas in an etching gas source through the plasma formed by the plasma generating device, directly bombarding the surface to be processed by the active ions formed by the inert gas to sputter, wherein the sputtered particles contain silicon dioxide and react with the active ions formed by the fluorine-containing gas to generate nanoclusters, the glass substrate is etched, namely, the glass substrate and components in the glass substrate are subjected to chemical reaction, so that a concave-convex structure with high uniformity is formed on the surface to be processed, namely, an anti-glare surface is formed. The processing equipment firstly carries out plasma cleaning and then carries out plasma etching on the glass substrate, adopts inert gas which does not react with a base material of the glass substrate in the cleaning process, directly bombards the surface to be processed by active ions formed by a plasma generating device, does not chemically react with the glass substrate, belongs to physical etching, can thoroughly clean various pollutants of the glass substrate through bombardment, particularly can thoroughly clean firmly-adhered inorganic substances, reduces the influence of the pollutants on the etching effect in the etching process of the chemical reaction in the subsequent step, simultaneously avoids the chemical reaction between the impurities of the glass substrate and the active ions in the subsequent process as far as possible after the cleaning process of the plasma, reduces the probability of forming the impurities on the surface to be processed, and further improves the particle uniformity of the anti-glare surface, the substrate has no flash point phenomenon, so that the glass substrate has a clearer visual effect and a finer touch feeling while keeping the anti-dizziness function, and has great advantages in the aspect of being applied to glass cover plates of electronic product display screens (mainly mobile phones and vehicles) requiring higher resolution; the equipment does not generate harmful gas in the whole processing process of the glass substrate, and does not pollute the environment; and a mask is not required to be made in advance, so that the processing efficiency of the glass can be improved.
Other advantages of the present invention will be described in the detailed description, and those skilled in the art will understand the technical features and technical solutions presented in the description.
Drawings
Hereinafter, preferred embodiments according to the present invention will be described with reference to the accompanying drawings. In the figure:
FIG. 1 is a schematic structural view of a preferred embodiment of a processing apparatus for AG glass according to the present invention;
FIG. 2 is a schematic structural view of another preferred embodiment of the processing apparatus for AG glass according to the present invention;
FIG. 3 is a schematic perspective view of a preferred embodiment of the processing apparatus for AG glass according to the present invention;
fig. 4 and 5 are partially enlarged views of the anti-glare surface of the glass substrate processed by the processing apparatus of the present invention at different angles.
In the figure:
10. a process chamber; 11. a gate valve;
20. rotating the frame;
30. a plasma generating device; 31. a first plasma generating device; 32. a second plasma generating device; 33. a radio frequency source; 34. an ion source body;
40. a vacuum device; 41. a primary pump; 42. a secondary pump;
50. a biasing device;
60. and a controller.
Detailed Description
The present invention will be described below based on examples, but the present invention is not limited to only these examples. In the following detailed description of the present invention, certain specific details are set forth in order to avoid obscuring the nature of the present invention, well-known methods, procedures, and components have not been described in detail.
Further, those of ordinary skill in the art will appreciate that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale.
Unless the context clearly requires otherwise, throughout the description and the claims, the words "comprise", "comprising", and the like are to be construed in an inclusive sense as opposed to an exclusive or exhaustive sense; that is, what is meant is "including, but not limited to".
In the description of the present invention, it is to be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.
The utility model provides processing equipment for AG glass, which can form anti-glare glass by adopting a plasma etching mode.
Although some plasma processing apparatuses are used for forming a concave-convex structure on a glass substrate in the prior art, for example, in the manufacture of a solar panel, a mask layer is firstly manufactured on a substrate (possibly a glass substrate), then active ions generated by a plasma generating device are etched under the action of a bias device, the etching depth of a region with the mask is different from that of a region without the mask, then the residual mask layer is removed, and finally the concave-convex structure is formed on the surface. The surface area is increased in the solar panel manufacturing process to improve the photoelectric conversion efficiency, and the requirements on diffuse reflection, fog and definition are not strict. If the anti-glare glass is directly manufactured by adopting the method, because of the mask layer, the depth difference of each position is large during etching, and the uniformity of the formed concave-convex structure is poor, therefore, when the anti-glare glass is applied to electronic equipment with higher resolution, because the anti-glare glass is required to increase diffuse reflection under the condition of not influencing transmittance, and the generation of flash points is not desired, the requirements on roughness, fog and resolution are strict. The existing electronic equipment has complex process flow, low yield and high cost.
As shown in fig. 1 and 3, the processing equipment for anti-glare glass of the present invention includes a process chamber 10 having a gate valve 11, a turntable capable of rotating in the process chamber 10, a turret 20 capable of being mounted on the turntable, a plasma generating device 30, a bias device 50, and a vacuum device 40 for evacuating the process chamber 10, wherein the turntable is located in a central region of the process chamber 10, the turret 20 is detachably connected to the turntable, can be mounted on the turntable to be driven to rotate by the turntable, and can be detached from the turntable, the turret 20 has a mounting surface for mounting a glass substrate to be processed, and a space between the plasma generating device 30 and the turntable forms a process space. The plasma generating device 30 is disposed on a sidewall of the process chamber 10, and a working surface of the plasma generating device 30 faces a side surface of the turret 20, and when a glass substrate to be processed is mounted on the turret 20, the glass substrate faces the working surface of the plasma generating device 30.
Specifically, the plasma generating apparatus 30 is disposed at a sidewall of the process chamber 10 opposite to the rotating frame 20.
The plasma generating device 30 has a gas source inlet which can selectively communicate with the cleaning gas source and the etching gas source, that is, the plasma generating device 30 is communicated with either the cleaning gas source or the etching gas source, but cannot simultaneously adopt the cleaning gas source and the etching gas source to supply gas for the plasma generating device, and the specific gas source inlet can be connected with the cleaning gas source and the etching gas source through connecting the selection switch valve so as to control which gas source the gas source inlet is communicated with through controlling the selection switch valve. The cleaning gas source comprises an inert gas source and does not comprise a fluorine-containing gas source, namely, the gas in the cleaning gas source does not chemically react with the glass substrate and is a non-reactive gas; the etching gas source comprises an inert gas source and a fluorine-containing gas source, namely, the gas in the etching gas source comprises a gas which chemically reacts with the glass substrate, namely, comprises a reaction gas. The inert gas source of the cleaning gas source and the inert gas source of the etching gas source can share the same gas source, or different gas sources can be used, that is, the two inert gas sources can be the same inert gas source or different inert gas sources, and preferably, the same inert gas source is selected for the two inert gas sources.
The positive pole of the bias device 50 is connected to the chamber wall of the process chamber 10, and the negative pole is connected to the turret 20, so as to form a negative bias between the plasma generating device 30 and the turret 20, it should be noted that the positive pole here can be grounded, and the negative pole is connected to a negative voltage, that is, the positive pole and the negative pole are relative, that is, the positive pole is connected to a positive voltage, and the negative pole is connected to a negative voltage, so as to form a negative bias between the turret 20 and the chamber wall of the process chamber 10. When the processing equipment works, firstly, opening the gate valve 11, installing the rotating frame 20 provided with the glass substrate to be processed on the rotating table, closing the gate valve 11, controlling the vacuum device 40 to vacuumize the process chamber 10, and simultaneously controlling the rotating table to continuously rotate, specifically, controlling the vacuum device 40 to work by the controller 60 so that the process chamber 10 reaches the vacuum degree required by the plasma cleaning and plasma etching processes, and maintaining the vacuum degree required by the processes in the plasma cleaning and plasma etching processes; and the turret 20 will rotate throughout the process. Then, firstly, controlling a cleaning gas source to supply gas to the plasma generating device 30, controlling the plasma generating device 30 to work, and carrying out plasma cleaning on the surface to be processed of the glass substrate to be processed in the process chamber 10 so as to remove at least impurities on the surface to be processed; and then closing the cleaning gas source, controlling the etching gas source to supply gas to the plasma generating device 30, controlling the bias device to work at the same time, and performing plasma etching on the surface to be processed to form an anti-glare surface, wherein the anti-glare surface is of a concave-convex structure or is called as a suede, so that the anti-glare glass, namely AG glass is obtained. Then, the turntable stops rotating, that is, the turntable 20 stops rotating, the process chamber 10 is vented to normal pressure, the gate valve 11 is opened, and the processed glass substrate is conveyed out of the process chamber 10. Specifically, after the plasma etching is completed, the process chamber 10 is evacuated by opening the evacuation valve, and when the atmospheric pressure is reached, the gate valve 11 is opened to take out the glass substrate. It should be noted that, the bias device is controlled to work simultaneously when the etching gas source supplies gas, and the two are not limited to be opened at the same time, and one may be opened first, and the other may be opened later; can also be started simultaneously; and the controller needs to control the bias device not to work in the plasma cleaning process.
Obviously, for the same glass substrate, it is necessary to perform plasma cleaning first and then plasma etching, i.e. the processing equipment has at least two states: a plasma cleaning state and a plasma etching state, in both of which the plasma etching process is performed, but the specific etching principle is different:
plasma cleaning state: the fluorine-containing gas source can not supply gas for the plasma generating device 30, only the cleaning gas source supplies gas, and the etching gas source is closed, so that in the whole cleaning process, chemical etching can not occur on the surface of the glass substrate, and active ions formed by inert gas in the cleaning gas source after passing through the plasma generating device are only bombarded to sputter particles on the surface of the glass substrate, which belongs to physical etching, so that pollutants on the surface are removed;
plasma etching state: the etching gas source supplies gas to the plasma generating device 30, the inert gas is used as a source of high-energy particles, the fluorine-containing gas is used as neutral reactive etching ions, and under the action of the bias device, the generated active ions with high energy bombard the surface of the glass substrate, so that not only are the particles on the surface of the glass substrate sputtered, but also the sputtered particles can chemically react with the fluorine-containing active ions to form ion clusters, and the surface of the glass substrate is chemically etched.
The processing equipment adopts inert gas which does not react with the base material of the glass substrate in the cleaning process, active ions formed by the plasma generating device 30 directly bombard the surface to be processed and do not react with the glass substrate, and the processing equipment belongs to physical etching, so that various pollutants of the glass substrate can be thoroughly cleaned through bombardment, in the subsequent etching process of chemical reaction, and after the cleaning process of the plasma, the chemical reaction between impurities of the glass substrate and the active ions in the subsequent process is avoided as much as possible, the probability of forming the impurities on the surface to be processed is reduced, the particle uniformity of the anti-glare surface is further improved, the substrate does not have a flash point phenomenon, and the glass substrate has a clearer visual effect and a finer touch feeling while keeping the anti-glare function, the glass cover plate has great advantages in the aspect of being applied to the glass cover plate of the display screen (mainly a mobile phone and a vehicle) of an electronic product with higher requirement on resolution; and the equipment can not generate harmful gas in the whole processing process of the glass substrate and can not pollute the environment.
Wherein, the process chamber 10 may be a prism-shaped space, a cylindrical space, etc., the turntable is disposed at a central region of the process chamber, the plasma generating devices are disposed at edges of the space, and when a plurality of plasma generating devices 30 are provided, the plasma generating devices are disposed at sidewalls along a circumferential direction of the space, so that distances between the glass substrate to be processed mounted on the turret 20 and the plasma generating devices 30 are equal as much as possible during rotation of the turntable, thereby ensuring an etching effect at each position of the glass substrate.
The vacuum device 40 has a connection portion, the vacuum device 40 is connected to the sidewall of the process chamber 10 through the connection portion, specifically, the connection portion may include a first flange, the sidewall of the process chamber 10 is provided with a second flange, the second flange is provided with a pumping hole penetrating through the inner cavity of the process chamber 10, the first flange and the second flange are connected through a fastening member such as a screw, and in order to ensure the sealing property therebetween, a sealing ring may be disposed between the first flange and the second flange.
Wherein, the vacuum device 40 may include a primary pump 41 and a secondary pump 42, as shown in fig. 3, the primary pump 41 is connected with the secondary pump 42 through a vacuum pipeline, the secondary pump 42 is connected with the process chamber 10, the primary pump 41 performs pre-vacuum, that is, the process chamber 10 is pumped from the atmospheric state to the low vacuum state, the secondary pump 42 is a fine pump, which is used for pumping the process chamber 10 from a low vacuum state to a high vacuum state, if working, the primary pump 41 works first, when the process chamber 10 reaches a low vacuum condition, the secondary pump 42 resumes operation, while the primary pump 41 is still operating, both of which together maintain the process chamber 10 at a background vacuum level (described in detail below), when performing plasma cleaning and plasma etching, the primary pump 41 and the secondary pump 42 work together to maintain the pressure during plasma cleaning or the pressure during plasma etching in the process chamber 10 in cooperation with the gas flow of the cleaning gas source and the gas flow of the etching gas source.
The cleaning gas source during plasma cleaning does not include a fluorine-containing gas source, and the glass substrate is located in the same process chamber 10 during plasma cleaning and plasma etching, so that in order to avoid the influence of the residual active ions during plasma cleaning on the concentration of fluorine-containing ions in the active ions during the subsequent plasma etching, which affects the precise control of plasma etching, after the plasma cleaning, the plasma etching step is preferably performed after a predetermined time (for example, a first predetermined time or a second predetermined time described below) is first left, and during the predetermined time, the residual cleaning gas can be sucked away by the vacuum device 40.
Wherein, the process chamber 10 can be provided with one plasma generating device 30, or can be provided with a plurality of plasma generating devices 30, when a plurality of plasma generating devices 30 are provided, the plurality of plasma generating devices 30 can be distributed along the circumferential direction of the process chamber 10, and the glass substrate to be processed can be acted by the plurality of plasma generating devices 30 in the process of rotating the rotating frame 20 for one circle, thereby improving the efficiency of plasma cleaning and plasma etching.
The gas source inlet of the plasma generating device 30 needs to be connected to both the cleaning gas source and the etching gas source, and the gas source inlet is controlled to be communicated with which gas source through the selection switch valve. In another embodiment, the plasma generating device 30 may be directly replaced by the first plasma generating device 31 and the second plasma generating device 32, that is, two plasma generating devices are adopted, in this way, the first plasma generating device 31 and the second plasma generating device 32 only need to be respectively connected with one gas source, and other components may be used in common. Correspondingly, different plasma generating devices can be controlled to work in the plasma cleaning process and the plasma etching process respectively. Specifically, as shown in fig. 2, the first plasma generating device 31 has a first gas source inlet connected to a cleaning gas source, the second plasma generating device 32 has a second gas source inlet connected to an etching gas source; at this time, in this embodiment, when the processing apparatus is in the plasma cleaning state, the cleaning gas source supplies gas to the first plasma generating device 31, the first plasma generating device 31 connected to the cleaning gas source operates, and the second plasma generating device 32 and the bias device do not operate; when the processing equipment is in a plasma etching state, the etching gas source supplies gas to the second plasma generating device 32, and the second plasma generating device 32 and the biasing device which are communicated with the etching gas source work. By adopting two plasma generating devices, different steps control different plasma generating devices during control, disorder is not easy to cause, and therefore the processing efficiency of the whole anti-glare glass is improved.
In the embodiment in which two plasma generating apparatuses are provided, since both are still in the same process chamber 10, there is still a problem in that gases in the plasma cleaning process and the plasma etching process affect each other, and therefore, the plasma etching is preferably performed after staying for a predetermined time after the plasma cleaning, and in particular, the foregoing description can be referred to.
Further, in order to better isolate the influence of the cleaning gas remaining in the plasma cleaning process on the plasma etching process on the pumping direction of the vacuum apparatus 40, the first plasma generation device 31 and the second plasma generation device 32 are located on both sides of the boundary, and as shown in fig. 2, the first plasma generation device 31 and the second plasma generation device 32 are respectively located on both sides of the connection portion of the vacuum apparatus 40 in the circumferential direction of the process chamber 10, so that the vacuum apparatus 40 can more quickly pump away the cleaning gas even if there is the remaining cleaning gas. Of course, the number of the first plasma generating device 31 and the second plasma generating device 32 may be different, and they may be arranged in other manners, for example, the first plasma generating device 31 is provided with one on one side of the above-mentioned limit, the second plasma generating device 32 is provided with three, one of which is located on the same side of the above-mentioned limit as the first plasma generating device 31, and the other two are located on the other side of the above-mentioned limit as the second plasma generating device 32.
Specifically, the first plasma generation device 31 and the second plasma generation device 32 may be respectively provided with one, or may be respectively provided with a plurality of, such as two, three, or more, and the number of the two may be equal or may not be equal, for example, the first plasma generation device 31 is provided with one, the second plasma generation device 32 is provided with two, or the first plasma generation device 31 is provided with two, and the second plasma generation device 32 is also provided with two. In a specific embodiment, the connection portion of the vacuum device 40 is disposed opposite to the gate valve 11, and a plurality of first plasma generating devices 31 and a plurality of second plasma generating devices 32 are respectively arranged along the circumference of the process chamber 10 at both sides of the opposite direction, that is, the first plasma generating devices 31 and the second plasma generating devices 32 are arranged along the circumference of the process chamber 10 and are separated by the connection portion of the vacuum device 40 and the gate valve 11. By providing the plurality of first plasma generation devices 31 and the plurality of second plasma generation devices 32, the plurality of plasma generation devices 30 can be operated during one rotation of the turret 20, thereby improving the efficiency of plasma cleaning and plasma etching.
In the embodiments described above, the background vacuum of the process chamber 10 (i.e., the gas pressure when the purge gas source is not supplying gas) is less than or equal to 8.0 x10 when the processing tool is in the plasma purge state-4Pa, e.g. 8.0 x10-4Pa、5.0*10-4Pa、1.0*10-5Pa, etc.; the working pressure (i.e. the pressure at which the cleaning and etching are carried out) is 1.0 x10-13Pa, e.g. 10-1Pa, 1Pa, 1.5Pa, 2Pa, 3Pa, etc. The first plasma generating device 411 has a power of 1.5-5 kW, such as 1.5kW, 2.0kW, 3.5kW, 4.5kW,5kW, frequency 13.56 MHz. The gas flow rate of the first inert gas source is 150sccm to 500sccm, such as 150sccm, 200sccm, 230sccm, 280sccm, 300sccm, 320sccm, 350sccm, 400sccm, 430sccm, 480sccm, 500sccm, and the like. Wherein, the working gas pressure refers to the gas pressure at the gas source outlet of the ion source body of the plasma generating device 30, and the power and the frequency refer to the power and the frequency of the radio frequency source of the plasma generating device 30. In actual processing, the process chamber 10 may be evacuated to a background vacuum of less than or equal to 8.0 x10-4Pa, i.e. the process chamber 10 is first vacuumized to the background vacuum degree before the cleaning gas source supplies gas, and the pressure of the whole process chamber 10 is maintained at 1.0 x10 by adjusting the gas flow of the inert gas source in the cleaning gas source when plasma cleaning is carried out-1-3 Pa, and of course when a reactive gas is included, the gas flow of the reactive gas source is also regulated. With the arrangement, pollutants such as inorganic matters and the like can be thoroughly cleaned by means of physical etching.
When the processing tool is in the plasma etch state, the background vacuum of the process chamber 10 (i.e., the gas pressure when the etchant gas source is not supplying gas) is less than or equal to 8.0 x10-4Pa, e.g. 8.0 x10-4Pa、5.0*10-4Pa、 1.0*10-5Pa, etc.; working pressure (namely pressure intensity in the process of plasma etching and pressure intensity in the process of AG etching) is 1 Pa-60 Pa, for example, the power of the ion generating device 30 is 1.5-5 kW, such as 1Pa, 5Pa, 7Pa, 10Pa, 13Pa, 16Pa, 18Pa, 20Pa, 30Pa, 40Pa, 45Pa, 50Pa, 55Pa, 60Pa and the like; such as 1.5kW, 2.0kW, 3.5kW, 4.5kW, 5 kW; the frequency is 13.56 MHz; wherein, the power and the frequency refer to the power and the frequency of the rf source of the plasma generating apparatus 30. The bias voltage of the bias device 50 is 400-1800V, such as 400V, 500V, 800V, 1000V, 1300V, 1500V, etc.; the power is 1.5kW to 4.5kW, such as 1.5kW, 2.0kW, 3.5kW, 4.5kW and the like; the frequency is 13.56MHz, and the full range of AG process requirements for roughness can be achieved by adjusting the bias voltage to within this range. In the actual process, the background vacuum degree of the process chamber 10 can be reduced to less than or equal to 8.0 x10 by vacuumizing-4Pa, when entering into the plasma etching step, adjusting inert gas in the etching gas sourceThe gas flow of the source and the fluorine-containing gas source maintains the pressure of the whole process chamber 10 at a working pressure of 1 Pa-60 Pa, and the gas flow of the active gas source is adjusted when the active gas is included, and the proportion of the gas content provided by the second inert gas source and the fluorine-containing gas source is 9: 1-2: 1 regardless of the adjustment. Under the setting of these parameters, the etching time is set to 20-40 min, such as 20min, 25min, 30min, 38min, and 40 min. By adopting the arrangement, the surface of the glass substrate can be etched in a mode of combining physical etching and chemical etching, so that a more uniform concave-convex structure is formed, the resolution is higher, and the flash point is less.
It should be noted that, no matter how many plasma generating devices are provided, in order to improve the effect and efficiency of plasma etching, a preset time interval is preferably set between the plasma cleaning state and the plasma etching state, and the residual gas of the cleaning gas source is cleaned by the method described above within the preset time interval. Wherein the preset time can be 1-3 minutes, such as 1 minute, 1.5 minutes, 2 minutes, 3 minutes, etc. Of course, it may be selected from less than 1 minute, or more than 3 minutes.
Several plasma generating devices (including a first plasma generating device 31 and a second plasma generating device 32) are arranged in the plasma generating device 30, and the plasma generating devices can be Inductively Coupled Plasma (ICP) generating devices, namely, plasmas are generated in an inductive discharge mode; it is also possible to have a capacitively coupled plasma generating device (i.e., CCP), i.e., a plasma generated by means of a capacitive discharge. Preferably, inductively coupled plasma is used, in which the energy of the generated ions is higher and is substantially an order of magnitude higher than that of the capacitively coupled plasma generating device, so that the anti-glare surface after etching has a remarkable and uniform effect.
Specifically, a mounting flange is arranged outside the side wall of the process chamber 10, and the mounting flange is provided with a mounting hole penetrating through the side wall; the plasma generating device 30 (or the first plasma generating device 31 and the second plasma generating device 32) comprises an rf source 33 and an ion source body 34, which are connected with each other, the rf source 33 is mounted on a mounting flange and can be locked with the mounting flange by a fastener such as a screw, the ion source body 34 is provided with an air source inlet and an air source outlet, the ion source body 34 penetrates through the mounting hole and extends into the process chamber 10, and the air source outlet faces the rotating frame 2. In a preferred embodiment, when the plasma generating device works, the cleaning gas source or the etching gas source is controlled to supply gas to the ion source body, until the gas flow ejected from the gas source outlet of the ion source is stable (i.e. the gas flow rate is substantially the same in the same time), the radio frequency source is controlled to work, so that the plasma generating device 30 works, and at this time, plasma is generated, so as to perform plasma cleaning or plasma etching on the surface to be processed of the glass substrate to be processed in the process chamber 10. Therefore, the stability of active ions during plasma cleaning and plasma etching can be ensured, and the manufacturing efficiency of the anti-glare glass is improved.
The inert gas source of the cleaning gas source and the inert gas source of the etching gas source are preferably argon gas sources, and other inert gas sources can be selected. The source of fluorine-containing gas in the etching gas source is preferably CF4The gas source of (2) may be C4F8、CHF3、SF6Etc. gas sources.
In plasma etching, the etching speed is related to the ion density of plasma, the size of plasma ion beam current can be adjusted through the power of a radio frequency source and the flow of an etching gas source, the larger the beam current is, the larger the ion density of the plasma is, the larger the etching speed is, the larger the beam current is, the larger the yield of sputtering ions is, the larger the etching ion quantity is, and further the disorder among particles is increased, so that the generation efficiency of the nanoclusters is improved.
Specifically, the gas content ratio of the inert gas and the fluorine-containing gas in the mixed gas in the etching gas source and the vacuum degree of the process chamber 10 affect the uniformity of the concave-convex structure in the etched surface and the roughness of the whole surface, the more the fluorine-containing gas content is, the more the active ions participating in the chemical reaction in the plasma etching are, the larger the width of the etched textured surface is, and if the content of the inert gas is too small, the smaller the ion sputtering speed is in the etching, the particles cannot be bombarded from the surface of the glass substrate to react with the active ions, which may cause etching failure. Preferably, the ratio of the gas supply amount of the inert gas to the fluorine-containing gas in the etching gas source is 9:1 to 2:1, such as 9:1, 8:1, 7:1, 5:1, 4:1, 3:1, 2.5:1, 2:1, and the like, and by adopting the ratio, the surface uniformity after the plasma etching treatment is better and the resolution is higher.
The cleaning gas source and the etching gas source can also comprise active gas sources, such as an oxygen source, a hydrogen source and the like, when the active gas sources are included, the activity of plasmas formed by inert gases can be increased, the bombardment of active ions on the surface of the glass substrate can be increased, and the sputtering and chemical etching effects in the cleaning and etching processes can be increased; and the active gas can promote the fluorine-containing gas to generate high-density unsaturated radicals, so that the efficiency and the effect of chemical etching can be further improved. Specifically, the flow rate of the active gas source, such as the oxygen source, is 0-200 sccm, preferably 50-200 sccm, such as 50sccm, 80sccm, 100sccm, 130sccm, 160sccm, 200sccm, etc.
When the above-mentioned process parameters of the plasma cleaning and the plasma etching are adopted, the rotation speed of the turntable is preferably 10 to 100 rpm, such as 10 rpm, 20 rpm, 30 rpm, 45 rpm, 50 rpm, 55 rpm, 60 rpm, 67 rpm, 75 rpm, 80 rpm, 85 rpm, 90 rpm, 96 rpm, 100 rpm, and the like. Preferably 60-100 rpm, to further improve the etching efficiency and the etching effect.
The glass substrate to be processed may be directly adhered or mounted on the rotating frame 20 by means of vacuum adsorption, in order to facilitate the mounting of the glass substrates and to enable the simultaneous processing of a plurality of glass substrates, in a preferred embodiment of the utility model, the turret 20 has a polygonal prism structure, such as a quadrangular prism, a pentagonal prism, a hexagonal prism, etc., and in practice, is not limited to a regular prism, may be of a prism-like structure, the turret 20 has hollow mounting holes which are fitted with the turret, and each prism face of the prism structure forms a mounting face for mounting a glass substrate to be processed, that is, one glass substrate may be mounted on each prism face, thus, one turret 20 can be simultaneously mounted with a plurality of glass substrates, as shown in fig. 3, and it is apparent that, by the method, a plurality of glass substrates can be processed simultaneously, and the processing efficiency of the anti-glare glass is improved; particularly, in the embodiment in which a plurality of the same plasma generation devices 30 are simultaneously provided or a plurality of the first plasma generation devices 31 and a plurality of the second plasma generation devices 32 are simultaneously provided in the process chamber 10, when one of the glass substrates is subjected to plasma cleaning or plasma etching, at least another glass substrate is also subjected to plasma cleaning or plasma etching, and therefore, the processing efficiency of the processing apparatus can be further improved. It will be appreciated that other configurations of the turret 20 may be used, such as a flat plate configuration. The glass substrate may be mounted on the rotating frame 20 by various methods such as vacuum adsorption, clamping, and suspension.
In order to improve the etching efficiency of the plasma generation device 30, when the rotating rack 20 is rotated to a state where the mounting surface faces the plasma generation device 30 (or the first plasma generation device 31 or the second plasma generation device 32), the distance between the mounting surface and the plasma generation device 30 is preferably 20 to 80mm, specifically, the distance between the mounting surface and the working surface of the plasma generation device 30 is 20 to 80mm, such as 20mm, 25mm, 30mm, 33mm, 36mm, 38mm, 40mm, 50mm, 55mm, 60mm, 67mm, 75mm, 80mm, and the like.
In order to improve the efficiency of the work in the assembly line work, the processing equipment further includes a transfer mechanism including a carriage for mounting the turret 20 on the turntable, as shown in fig. 3.
It can be understood that, when the processing equipment is used to process the glass substrate to be processed, the glass substrate is cleaned by ultrasonic waves and the like, and then enters the processing equipment to be subjected to plasma cleaning and plasma etching.
Wherein, fig. 4 and 5 show partial enlarged views of different viewing angles of the glass substrate processed by the processing equipment of the present invention, and the following measurement data obtained after measuring the surfaces of the sample glass with the glossiness of 108, the semi-finished product processed by the processing equipment of the present invention and the finished product by taking keyence VK-X100 as a measuring instrument are shown in table 1 below, wherein the semi-finished product is a sample after only plasma cleaning, and the table is represented by a cleaning sample; the finished product is a sample after plasma cleaning and plasma etching, and is shown as a plasma etching sample in the table.
TABLE 1
Therefore, the anti-glare surface formed by the embodiment can meet the performance requirements of AG glass in different parameter ranges, and the obtained AG glass has higher definition.
It will be appreciated by those skilled in the art that the above-described preferred embodiments may be freely combined, superimposed, without conflict.
It will be understood that the above-described embodiments are illustrative only and not restrictive, and that various obvious or equivalent modifications and substitutions for details described herein may be made by those skilled in the art without departing from the basic principles of the utility model.
Claims (10)
1. A processing apparatus for AG glass, characterized by comprising a process chamber (10) having a gate valve (11), a turntable rotatable within the process chamber (10), a turret (20) mountable to the turntable, a first plasma generating means (31), a second plasma generating means (32), a biasing means (50) and a vacuum means (40) for evacuating the process chamber (10);
the rotary table is arranged in the central area of the process chamber (10), and the side surface of the rotary table (20) is provided with a mounting surface for mounting a glass substrate to be processed;
each plasma generating device is arranged on the side wall of the process chamber (10), the working surface of each plasma generating device faces the side surface of the rotating frame (20), the first plasma generating device (31) is provided with a first gas source inlet, the first gas source inlet is connected with a cleaning gas source, and the cleaning gas source comprises an inert gas source; the second plasma generating device (32) is provided with a second gas source inlet which is connected with an etching gas source, and the etching gas source comprises an inert gas source fluorine-containing gas source; the positive pole of the biasing device (50) is connected with the cavity wall of the process chamber (10), and the negative pole is connected with the rotating frame (20).
2. The processing apparatus according to claim 1, wherein a connection portion of the vacuum means (40) to the process chamber (10) is disposed opposite to the gate valve (11), and a plurality of the first plasma generating means (31) and a plurality of the second plasma generating means (32) are respectively arranged along a circumferential direction of the process chamber (10) at both sides of the opposite direction.
3. A processing apparatus for AG glass, characterized by comprising a process chamber (10) having a gate valve (11), a turntable rotatable within the process chamber (10), a turret (20) mountable to the turntable, plasma generating means (30), biasing means (50), and vacuum means (40) for evacuating the process chamber (10);
the rotary table is arranged in the central area of the process chamber (10), and the side surface of the rotary table (20) is provided with a mounting surface for mounting a glass substrate to be processed;
the plasma generating device (30) is arranged on the side wall of the process chamber (10), the working surface of the plasma generating device (30) faces the side surface of the rotating frame (20), the plasma generating device (30) is provided with a gas source inlet, the gas source inlet can be alternatively communicated with a cleaning gas source and an etching gas source, the cleaning gas source comprises an inert gas source, and the etching gas source comprises an inert gas source and a fluorine-containing gas source; the positive pole of the biasing device (50) is connected with the cavity wall of the process chamber (10), and the negative pole is connected with the rotating frame (20).
4. The processing apparatus according to claim 3, wherein the plasma generating means (30) are distributed in plurality along the circumferential direction of the process chamber (10).
5. The processing apparatus according to any one of claims 1 to 4, wherein the processing apparatus has a plasma cleaning state and a plasma etching state,
in the plasma cleaning state, a background vacuum of the process chamber (10) is less than or equal to 8.0 x10-4Pa, working pressure of 1.0 x10-1-3 Pa; the power of the plasma generating device is 1.5-5 kW, and the frequency is 13.56 MHz; the inert gas supply flow of the cleaning gas source is 150 sccm-500 sccm;
in the plasma etch state, a background vacuum of the process chamber (10) is less than or equal to 8.0 x10-4Pa, the working air pressure is 1 Pa-60 Pa; the power of the plasma generating device is 1.5-5 kW; the frequency is 13.56MHz, and the etching time is 20-40 min; the bias voltage of the bias device (50) is 400-1800V, the power is 1.5-4.5 kW, and the frequency is 13.56 MHz; the ratio of the inert gas of the etching gas source to the fluorine-containing gas is 9: 1-2: 1.
6. The processing apparatus as claimed in any one of claims 1 to 4, wherein a mounting flange is provided outside a side wall of the process chamber, the mounting flange being provided with a mounting hole through the side wall; the plasma generating device is an inductively coupled plasma generating device and comprises a radio frequency source (33) and an ion source body (34) which are connected with each other, wherein the radio frequency source (33) is installed on the installation flange, the ion source body (34) is provided with an air source inlet and an air source outlet, the ion source body (34) penetrates through the installation hole to extend into the process chamber (10), and the air source outlet faces the rotating frame (20).
7. The processing tool according to any of claims 1-4, wherein the purge gas source and the etching gas source each further comprise an oxygen source having a gas flow rate of 0 to 200 seem.
8. The processing apparatus according to any of claims 1 to 4, wherein the turret (20) has a multi-faceted prismatic structure, each prismatic facet of the prismatic structure forming the mounting face.
9. The processing apparatus according to claim 8, wherein when the turret (20) is rotated to a state where the mounting surface faces the plasma generation device, a distance between the mounting surface and the plasma generation device is 20 to 80 mm.
10. The processing apparatus according to any one of claims 1 to 4, wherein the rotation speed of the turntable is 10 to 100 revolutions per minute.
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| CN115159865A (en) * | 2022-07-26 | 2022-10-11 | 艾瑞森表面技术（苏州）股份有限公司 | Anti-dazzle surface treatment method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115159865A (en) * | 2022-07-26 | 2022-10-11 | 艾瑞森表面技术（苏州）股份有限公司 | Anti-dazzle surface treatment method |
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