CN216528758U - Wafer cleaning system - Google Patents
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- CN216528758U CN216528758U CN202122359242.8U CN202122359242U CN216528758U CN 216528758 U CN216528758 U CN 216528758U CN 202122359242 U CN202122359242 U CN 202122359242U CN 216528758 U CN216528758 U CN 216528758U
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- 238000004140 cleaning Methods 0.000 title claims abstract description 137
- 238000000034 method Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 26
- 230000000149 penetrating effect Effects 0.000 claims abstract description 9
- 239000007921 spray Substances 0.000 claims description 14
- 239000002346 layers by function Substances 0.000 claims description 3
- 239000000243 solution Substances 0.000 description 13
- 239000007788 liquid Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- -1 organic adhesion Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011550 stock solution Substances 0.000 description 1
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Abstract
An embodiment of the present invention provides a wafer cleaning system, including: a light emitting component; the light receiving component is arranged opposite to the light emitting component and can receive the light beams emitted by the light emitting component; a light passing-through region is formed between the light emitting component and the light receiving component; in the process of rotating the wafer, the edge of the wafer passes through the light through area; the processor is used for determining the rotating speed of the wafer and is connected with the light receiving assembly; in the process of rotating the wafer, when the notch of the wafer passes through the light penetrating region, the light beam received by the light receiving component has first light intensity, when the part of the edge of the wafer, which is not provided with the notch, passes through the light penetrating region, the light beam received by the light receiving component has second light intensity, and the first light intensity is greater than the second light intensity.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a wafer cleaning system.
Background
In the semiconductor manufacturing process, various processes such as etching (Etch), Oxidation (Oxidation), Deposition (Deposition), Photoresist stripping (PR), Chemical Mechanical Polishing (CMP), and the like are required to be performed on a wafer. These processes can generate more or less contaminants, such as organic adhesion, metal adhesion, and oxide film, on the wafer surface while performing the wafer function. Therefore, during the wafer manufacturing process, the wafer cleaning system is required to remove the contaminants generated on the wafer surface. When a wafer is cleaned by using a wafer cleaning system, the wafer generally needs to rotate at a preset rotation speed, so that the wafer can be cleaned more comprehensively and thoroughly.
However, the wafer cleaning system in the related art is prone to cause false alarm, resulting in poor wafer cleaning efficiency.
SUMMERY OF THE UTILITY MODEL
In order to solve the related technical problems, an embodiment of the utility model provides a wafer cleaning system.
The embodiment of the utility model provides a wafer cleaning system, which comprises:
a light emitting assembly;
the light receiving component is arranged opposite to the light emitting component and can receive the light beams emitted by the light emitting component; a light passing-through region is formed between the light emitting component and the light receiving component; in the process of rotating the wafer, the edge of the wafer passes through the light through area;
the processor is used for determining the rotating speed of the wafer and is connected with the light receiving assembly;
in the process of rotating the wafer, when the notch of the wafer passes through the light penetrating region, the light beam received by the light receiving component has first light intensity, when the part of the edge of the wafer, which is not provided with the notch, passes through the light penetrating region, the light beam received by the light receiving component has second light intensity, and the first light intensity is greater than the second light intensity.
In the above scheme, the wafer is parallel to the light emitting module and the light receiving module;
and in the process of rotating the wafer, the notch of the wafer passes through the light through area.
In the above solution, the light emitting assembly is disposed on one side of the first surface of the wafer;
the light receiving assembly is arranged on one side of the second surface of the wafer; the first surface and the second surface are opposite surfaces, and the device functional layer of the wafer is formed on the second surface.
In the above scheme, the light emitted by the light emitting assembly is invisible light.
In the above scheme, the processor is specifically configured to determine the rotation speed of the wafer according to a time difference between at least two times of receiving the first light intensity by the light receiving element.
In the above solution, the wafer cleaning system further includes:
and adjusting the cleaning parameters according to the rotating speed of the wafer.
In the above solution, the wafer cleaning apparatus includes: the cleaning device comprises a first cleaning brush, a second cleaning brush and rollers; wherein,
the wafer is placed in a gap formed between the first cleaning brush and the second cleaning brush; and the number of the first and second groups,
the roller for bearing the wafer and driving the wafer to rotate is positioned below the gap.
In the above solution, the wafer cleaning apparatus further includes: a first nozzle and a second nozzle; wherein,
the first spray pipe and the second spray pipe are oppositely arranged above the side of the wafer;
the first spray pipe is matched with the first cleaning brush to clean the first surface of the wafer;
and the second spray pipe is matched with the second cleaning brush to clean the second surface of the wafer.
In the above scheme, the first cleaning brush and the second cleaning brush which drive the wafer to rotate are both in contact with the wafer; the first cleaning brush is in contact with the first surface of the wafer, and a first included angle is formed between the first cleaning brush and the first surface of the wafer; the second cleaning brush contacts the second surface of the wafer, and a second included angle exists between the second surface of the wafer and the second cleaning brush.
An embodiment of the present invention provides a wafer cleaning system, including: a light emitting assembly; the light receiving component is arranged opposite to the light emitting component and can receive the light beams emitted by the light emitting component; a light passing-through region is formed between the light emitting component and the light receiving component; in the process of rotating the wafer, the edge of the wafer passes through the light through area; the processor is used for determining the rotating speed of the wafer and is connected with the light receiving assembly; in the process of rotating the wafer, when the notch of the wafer passes through the light penetrating region, the light beam received by the light receiving component has first light intensity, when the part of the edge of the wafer, which is not provided with the notch, passes through the light penetrating region, the light beam received by the light receiving component has second light intensity, and the first light intensity is greater than the second light intensity. In the wafer cleaning system provided by the embodiment of the utility model, the light emitting component and the light receiving component are respectively arranged at two sides of the wafer with the notch at the edge, and the rotating speed of the wafer can be accurately determined by using different light intensities of the light beams received by the light receiving component, so that the times of mistakenly sending alarms by the wafer cleaning system are reduced, and the wafer cleaning efficiency can be further improved.
Drawings
FIG. 1a is a schematic perspective view of a wafer cleaning system according to the related art;
FIG. 1b is a schematic side view of a wafer cleaning system according to the related art;
FIG. 2 is a schematic diagram of a wafer cleaning system according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a relative position relationship between a light emitting device/a light receiving device and a notch in a wafer cleaning system according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a relative position relationship between a light emitting device/light receiving device and a wafer surface according to an embodiment of the present invention;
FIG. 5 is a graph of light intensity over time according to an embodiment of the present invention.
Detailed Description
In order to make the technical solutions and advantages of the embodiments of the present invention clearer, the following will describe specific technical solutions of the present invention in further detail with reference to the accompanying drawings in the embodiments of the present invention. The following examples are intended to illustrate the utility model but are not intended to limit the scope of the utility model.
As the feature size of the integrated circuit enters the deep submicron stage, the requirements for the cleanliness of the wafer surface in the wafer manufacturing process of the integrated circuit are more and more strict. More or less contaminants such as organic adhesion, metal adhesion, and oxide film may be generated on the wafer surface during processes such as etching, oxidation, deposition, photoresist stripping, and chemical mechanical polishing; uncleaned contaminants can affect the device functionality of the wafer. Therefore, in order to ensure that the functions of the devices formed on the wafer are not disturbed or damaged, the surface of the wafer is cleaned during the manufacturing process of the wafer.
In the related art, as shown in fig. 1a, a wafer to be cleaned is placed in a wafer cleaning system, wherein a nozzle 101 is disposed above a wafer side, at least one nozzle 102 is disposed on the nozzle 101, and a cleaning solution is ejected through the nozzle 102 to be combined with a cleaning brush 103 disposed on both sides of the wafer to clean a surface of the wafer to be cleaned.
In order to achieve a better cleaning effect, in the process of cleaning the wafer, the wafer often needs to have a certain rotation speed between the cleaning brushes 103 to clean the whole surface of the wafer; thus, a roller 104 is disposed below the wafer, as shown in fig. 1a and 1 b. In practical applications, the rollers 104 may include a driving pulley 1041 and a driven pulley 1042; the driving wheel 1041 can be used for carrying the wafer and driving the wafer to rotate, so that the wafer drives the driven wheel 1042 to rotate. The rotation speed of the wafer can be determined by measuring the rotation condition of the driven wheel 1042 in the wafer cleaning system; and the wafer cleaning system can determine the spraying amount and the spraying range of the cleaning liquid according to the rotating speed of the wafer so as to clean the whole surface of the wafer.
It should be noted that fig. 1a is a schematic perspective view of a wafer cleaning system in the related art; FIG. 1b is a schematic side view of the wafer cleaning system shown in FIG. 1 a.
However, when a part is installed or replaced, the driven wheel may have a gap between the driven wheel and the wafer due to different assembly methods or different consumables, and the wafer cannot drive the driven wheel to rotate, so that the monitoring software of the wafer cleaning system mistakenly considers that the wafer does not rotate and triggers an alarm, thereby affecting the cleaning efficiency of the wafer.
In addition, in practical application, the cleaning liquid (mainly hydrofluoric acid (HF) and ammonium hydroxide (NH)) for cleaning the wafer4OH)) along the wafer, the cleaning solution may cause the driven wheel to slip, and the rotation speed of the wafer cannot be correctly reflected, and on the other hand, the cleaning solution may also corrode the driven wheel, thereby shortening the service life of the driven wheel, and further increasing the maintenance cost.
Based on the above situations, the wafer cleaning system in the related art uses the driven wheel to measure the rotation speed of the wafer during the process of cleaning the wafer, which causes many problems.
Based on this, an embodiment of the utility model provides a wafer cleaning system 200, and fig. 2 shows a structural composition diagram of the wafer cleaning system 200 according to the embodiment of the utility model, as shown in fig. 2, including:
a light emitting member 201;
a light receiving component 202, which is arranged opposite to the light emitting component and can receive the light beam emitted by the light emitting component; a light passing-through region is formed between the light emitting component 201 and the light receiving component 202; in the process of rotating the wafer, the edge of the wafer passes through the light through area;
a processor 203 for determining the rotation speed of the wafer, connected to the light receiving module 202;
in the process of rotating the wafer, when the notch of the wafer passes through the light passing-through region, the light beam received by the light receiving assembly 202 has a first light intensity, and when the part of the edge of the wafer, where the notch is not arranged, passes through the light passing-through region, the light beam received by the light receiving assembly 202 has a second light intensity, where the first light intensity is greater than the second light intensity.
Here, the wafer is a wafer to be cleaned. In practical applications, the wafer may be a chip made of a semiconductor material, or may be a chip formed with a semi-finished device or a wiring. One or more notches are formed in the edge of the wafer; the notch can be a positioning hole for positioning a wafer during a wafer manufacturing process.
In order to facilitate a clear and simple understanding of the present invention, in the embodiments of the present invention, an example in which a notch is disposed on an edge of the wafer is described.
In practical applications, the light emitting assembly 201 includes a light emitting device for transmitting an optical signal through an optical signal transmission medium; here, the light emitting assembly 201 may be used to emit a light beam.
In some embodiments, the light emitted by the light emitting assembly 201 is non-visible light.
In practice, the light emitted from the light emitting assembly 201 may be non-visible light, such as infrared light, ultraviolet light, etc.
It can be understood that, when the light beam emitted by the light emitting element 201 is invisible, the light beam can be prevented from damaging the semiconductor material forming the wafer or the wiring pattern on the surface of the wafer, which is beneficial to improving the quality and yield of the wafer.
Here, the light receiving element 202 is disposed on two sides of the wafer opposite to the light emitting element 201, and the light receiving element 202 may be configured to receive the light beam emitted from the light emitting element 201. It is understood that the light beam travels along a straight line, and when the light beam is emitted from the light emitting assembly 201, travels to the light receiving assembly 202 and is received by the light receiving assembly 202, the region through which the light beam passes, i.e., the light passing region.
In practical applications, a portion of the wafer is located in the light passing region.
It can be understood that after the light emitting element 201 emits the light beam, a part of the light beam is blocked by the wafer and cannot pass through the wafer, and therefore, the light receiving element 202 can only receive another part of the light beam which is not blocked by the wafer.
It should be noted that the notch only occupies a part of the edge area of the wafer, and the light intensity of the light beam received by the light receiving element 202 at different times is different during the rotation of the wafer.
It can be understood that, since the edge of the wafer is provided with the notch, during the rotation of the wafer, the light intensity of the light beam received by the light receiving element when the notch of the wafer passes through the light through region is greater than the light intensity of the light beam received by the light receiving element when the portion of the edge of the wafer, where the notch is not provided, passes through the light through region.
Here, when the gap is located in the light through region, the light intensity of the light beam received by the light receiving assembly is a first light intensity; when the part of the edge of the wafer, which is not provided with the notch, passes through the light penetrating region, the light intensity of the light beam received by the light receiving assembly is a second light intensity; here, the first light intensity is greater than the second light intensity.
It should be noted that the light emitting element 201 and the light receiving element 202 can also be moved correspondingly, so that when the size of the wafer or the size of the notch is different, the wafer or the notch with different size can be matched.
In practical applications, the processor 203 may be configured to receive a control command and parse the control command; or sending out a control signal by using the analyzed result; and the system can be used for analyzing and processing the instruction content according to the content of the received control instruction.
In practical applications, the Processor 203 may be a Central Processing Unit (CPU), a Micro Processor Unit (MPU), a Digital Signal Processor (DSP), a Field Programmable Gate Array (FPGA), or the like.
Here, the processor 203 may be configured to analyze a difference between the first light intensity and the second light intensity of the light beam received by the light receiving assembly 202, and determine a time required for one rotation of the wafer according to a frequency of the first light intensity, so as to determine a rotation speed of the wafer.
It should be noted that, in some embodiments, when a wafer is not placed in the wafer cleaning system, the light beam emitted from the light emitting device 201 is not blocked, and all the light beam emitted from the light emitting device 201 is received by the light receiving device 202; at this time, the wafer cleaning system provided by the present invention can also be used to detect whether a wafer exists between the light emitting device 201 and the light receiving device 202.
In some embodiments, the wafer is parallel to both the light emitting element and the light receiving element; and in the process of rotating the wafer, the notch of the wafer passes through the light through area.
In practical applications, the light emitting device 201 is parallel to the light receiving device 202, the wafer is vertically disposed between the light emitting device 201 and the light receiving device 202, and the light beam in the light passing region has a path perpendicular to the surface of the wafer. As shown in fig. 3, fig. 3 is a schematic diagram illustrating a relative position relationship between the light emitting assembly/light receiving assembly and the notch according to the embodiment of the present invention. As can be seen in fig. 3, the projection of the light emitting element 201 onto a first plane, which is parallel to the surface of the wafer, overlaps with the projection of the light receiving element 202 onto the first plane. Here, the annular edge region where the notch is located is partially located in the light passing region, that is, a partial region in the annular edge region overlaps with the light emitting element 201 and the light receiving element 202.
It should be noted that the light emitting element 201 and the light receiving element 202 may be disposed at a plurality of positions relative to the wafer, for example, above the wafer, below the wafer, at the side of the wafer, etc. In the embodiment of the present invention, in order to facilitate a more intuitive understanding of the idea of the present invention, the light emitting device 201 and the light receiving device 202 are disposed above the wafer for example.
In the process of rotating the wafer, the notch can rotate along the annular edge area; thus, the notch has two position states in the rotating process, namely, the part of the edge of the wafer, which is provided with the notch, is positioned in the light through area and the part of the edge of the wafer, which is not provided with the notch, is positioned in the light through area. As shown in fig. 3, at this time, the position of the notch is the portion of the edge of the wafer where the notch is not located in the light passing region.
It can be understood that when the portion of the edge of the wafer where the notch is disposed is located in the light passing-through region, the light beam received by the light receiving element is more than the light beam received by the light receiving element when the portion of the edge of the wafer where the notch is not disposed is located in the light passing-through region. That is to say, when the intensity of the light beam emitted by the light emitting element is constant, the first light intensity of the light beam received by the light receiving element when the portion of the edge of the wafer, where the notch is formed, is located in the light passing-through region is greater than the second light intensity of the light beam received by the light receiving element when the portion of the edge of the wafer, where the notch is not formed, is located in the light passing-through region.
In practical applications, the position of the light emitting component is defined in order to avoid the light beam emitted by the light emitting component from damaging the surface of the wafer on which the partial wafer processing is completed, considering that the wafer may be partially processed on the surface of the wafer when the wafer is cleaned.
In some embodiments, the light emitting assembly is disposed on one side of the first surface of the wafer;
the light receiving assembly is arranged on one side of the second surface of the wafer; the first surface and the second surface are opposite surfaces, and the device functional layer of the wafer is formed on the second surface.
As shown in fig. 4, fig. 4 is a schematic diagram illustrating a relative position relationship between a light emitting device/light receiving device and a wafer surface according to an embodiment of the present invention. As can be seen from fig. 4, the light emitting element 201 is disposed on one side of the first surface of the wafer, and is disposed apart from the second surface on which the device function layer of the wafer is formed, so as to prevent the light beam emitted from the light emitting element 201 from affecting the device function layer on the second surface.
In order to obtain an accurate wafer rotation speed, the processor 203 is further configured to perform a corresponding calculation operation according to an embodiment of the present invention.
In some embodiments, the processor 203 is specifically configured to determine the rotation speed of the wafer according to a time difference between at least two times of receiving the first light intensity by the light receiving element.
In practical application, the light receiving module 202 forms a graph of the change of light intensity with time after receiving the light beam emitted by the light emitting module 201; as shown in FIG. 5, FIG. 5 is a graph illustrating a variation of light intensity with time according to an embodiment of the present invention; wherein the abscissa is a time axis and the ordinate is an intensity axis of light.
As can be seen from fig. 5, the light receiving element receives the first light intensity twice, and the time difference Δ T between the intensity peaks of the two first light intensities is the time required for the notch or the wafer to rotate for one circle; in this case, the processor 203 may calculate the rotation speed of the wafer according to the time difference Δ T.
In practical applications, in order to reduce the error of a single measurement, the rotation speed of the wafer may be calculated by averaging multiple times.
For example, the processor 203 may determine the time required for the wafer to rotate for N-1 cycles, determine the length of the line rotated by N-1 cycles of the wafer, and further determine the rotation speed of the wafer according to the time difference between the N times of receiving the first light intensity by the light receiving element. And N is a positive integer greater than 2.
It should be noted that the wafer cleaning system can accurately calculate the rotation speed of the wafer; and determining whether the wafer slips or does not rotate in the process of rotating the wafer according to different frequencies of the first light intensity received by the light receiving component.
It should be noted that, in the rotation process of the wafer, the movement locus of the wafer may have a certain fluctuation due to external forces, such as vibration, uneven stress on the wafer, and the like, so that the intensity value of the light beam received by the light receiving assembly may have a certain fluctuation.
For example, referring to fig. 5, when a wafer fluctuation occurs when a notch is located in the light passing region, it can be seen from the graph of fig. 5 that there is a difference in the peak values of the plurality of first intensities; when the wafer fluctuation occurs in the portion of the edge of the wafer where no notch is provided is located in the light through region, the second intensity curve may have fluctuation in the graph.
It should be noted that even if the motion trajectory of the wafer has a certain fluctuation variation, the characterization characteristic of the first intensity is not changed because the fluctuation variation is small.
Based on the above, in the process of wafer rotation, the stability of the wafer during rotation can be determined through the peak value change of the first light intensity or the fluctuation change of the second light intensity of the light beam received by the light receiving component.
In some embodiments, the wafer cleaning system further comprises: and adjusting the cleaning parameters according to the rotating speed of the wafer.
In practical application, the wafer cleaning device can clean the surface of the wafer; cleaning parameters can be adjusted according to the rotating speed of the wafer; wherein the cleaning parameters include: cleaning time, cleaning times, water pressure and flow rate of the cleaning liquid, and the like.
It can be understood that, in order to ensure the cleaning effect and the cleaning efficiency of the wafer, when the rotation speed of the wafer is slow, on one hand, the rotation speed of the wafer can be adjusted, and the cleaning efficiency of the wafer is improved; on the other hand, the cleaning parameters of the wafer apparatus may also be adjusted, for example, the water pressure and flow rate of the cleaning liquid may be increased to improve the cleaning effect of the wafer.
In some embodiments, as shown in fig. 4, the wafer cleaning apparatus includes: a first cleaning brush 301, a second cleaning brush 302, and a roller 303; wherein,
the wafer is placed in a gap formed between the first cleaning brush 301 and the second cleaning brush 302; and the number of the first and second groups,
the roller 303 for carrying the wafer and driving the wafer to rotate is located below the gap.
In practical applications, the first brush 301 and the second brush 302 are disposed on two sides of the wafer, and both the brushes may be in a column shape, and are parallel to each other in a first direction, for example, a direction parallel to the surface of the wafer, and the first brush 301 and the second brush 302 are disposed in parallel; here, a gap is left between the two brushes so that the wafer can be inserted through the gap. The first cleaning brush 301 and the second cleaning brush 302 each include a rotary shaft and a soft brush located outside the rotary shaft, the soft brush may be, for example, a sponge brush, and the sponge brush may be, for example, composed of a plurality of sponge blocks; in practical application, the rotating shaft can be a hollow shaft or a solid shaft; here, the rotating shaft is taken as a hollow shaft for explanation; the side wall of the rotating shaft is provided with a plurality of small holes, and deionized water (DIW) or cleaning liquid can reach the surface of the sponge brush from the center of the rotating shaft so as to clean the surface of the wafer. In the process of cleaning the surface of the wafer, the rotating shaft rotates to drive the sponge brush to wipe the surface of the wafer so as to remove pollutants on the surface of the wafer.
The roller 303 is positioned below the gap and used for bearing the wafer; specifically, the roller 303 has a groove for carrying the wafer. The wafer may be placed in a groove of the roller 303. The number of rollers 303 may include a plurality, such as two, three, four, etc., for confining the wafer within the gap. The rotation of the roller can drive the wafer to rotate, so that the sponge brush can wipe the whole surface of the wafer.
It should be noted that, because different chemical stock solutions have different cleaning capabilities for different defect sources and different active treatment layers, different cleaning solutions can be used to clean the contaminants on the wafer surface in practical applications. In practical applications, the cleaning solution may include hydrofluoric acid (HF), SPM (sulfuric acid) (H)2SO4) Hydrogen peroxide (H)2O2) And H2Mixed solution of O), SC1 (ammonia water (NH)4)、H2O2And H2Mixed solution of O) and DSP + (H)2SO4、H2O2HF and H2A mixed solution of O), etc., but is not limited thereto.
In some embodiments, the wafer cleaning apparatus further comprises: first nozzle 304 and second nozzle 305; wherein,
the first nozzle 304 is disposed above the side of the wafer opposite the second nozzle 305;
the first nozzle 304 is matched with the first cleaning brush 301 to clean the first surface of the wafer;
the second nozzle 305 is matched with the second cleaning brush 302 to clean the second surface of the wafer.
It should be noted that the wafer cleaning apparatus may further include: a first spray head and a second spray head; wherein at least one of the first spray heads is disposed on first nozzle 304; at least one of the second spray heads is disposed on second spout 305.
In practical applications, referring to fig. 4, the first nozzle 304 and the second nozzle 305 may be in a column shape, both of which are parallel to the first brush 301 or the second brush 302, and are disposed above and on the side of the wafer to convey the cleaning liquid. Here, both the first and second showerheads can be used to spray a cleaning solution to the wafer.
It is understood that during the wafer cleaning process, the cleaning liquid sprayed by the spray head to the wafer can be at least located at a diameter position of the wafer from the top 1/3 of the wafer; the cleaning fluid flows vertically downward along the wafer surface due to gravity so that the cleaning fluid is able to cover at least the area of the wafer surface corresponding to the remaining 2/3 wafer diameter distance. In this way, the first brush 301 and the second brush 302 can cover the entire surface of the wafer with the cleaning liquid as the wafer rotates.
In practical application, the first nozzle 304 is arranged above the first cleaning brush 301 and is parallel to the first cleaning brush 301; the second nozzle 305 is provided above the second washing brush 302 and is parallel to the second washing brush 302.
The first surface and the second surface are respectively a front side and a back side of the wafer, wherein the front side is one side of a device function layer for forming the wafer.
Here, the first surface may be a front surface or a back surface; the second surface can be a reverse surface or a front surface; however, the first surface is different from the second surface; when the first surface is the front surface of the wafer, the second surface is the back surface of the wafer; when the first surface is the reverse surface of the wafer, the second surface is the front surface of the wafer.
In some embodiments, the first cleaning brush and the second cleaning brush which drive the wafer to rotate are both in contact with the wafer; the first cleaning brush is in contact with the first surface of the wafer, and a first included angle is formed between the first cleaning brush and the first surface of the wafer; the second cleaning brush contacts the second surface of the wafer, and a second included angle exists between the second surface of the wafer and the second cleaning brush.
In practical application, a first included angle between the first cleaning brush and the first surface of the wafer is α, and α may be greater than 0 degree and smaller than 90 degrees. A second included angle between the second cleaning brush and the second surface of the wafer is β, and β may be greater than 0 degree and smaller than 90 degrees. Here, the first included angle α and the second included angle β may be the same or different.
In the process of cleaning the wafer, the first cleaning brush and the second cleaning brush rotate clockwise or anticlockwise and can drive the wafer to rotate.
Illustratively, the first cleaning brush contacts the first surface of the wafer, and a first included angle α exists between the first cleaning brush and the first surface, so that when the first cleaning brush rotates clockwise or counterclockwise, the wafer can be driven to rotate due to the action of friction force. Therefore, the wafer can be further ensured to be subjected to the acting force for driving the wafer to rotate.
It should be noted that: "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
In addition, the technical solutions described in the embodiments of the present invention may be arbitrarily combined without conflict.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (9)
1. A wafer cleaning system, comprising:
a light emitting assembly;
the light receiving component is arranged opposite to the light emitting component and can receive the light beams emitted by the light emitting component; a light passing-through region is formed between the light emitting component and the light receiving component; in the process of rotating the wafer, the edge of the wafer passes through the light through area;
the processor is used for determining the rotating speed of the wafer and is connected with the light receiving assembly;
in the process of rotating the wafer, when the notch of the wafer passes through the light penetrating region, the light beam received by the light receiving component has first light intensity, when the part of the edge of the wafer, which is not provided with the notch, passes through the light penetrating region, the light beam received by the light receiving component has second light intensity, and the first light intensity is greater than the second light intensity.
2. The wafer cleaning system of claim 1, wherein the wafer is parallel to both the light emitting assembly and the light receiving assembly;
and in the process of rotating the wafer, the notch of the wafer passes through the light through area.
3. The wafer cleaning system of claim 1,
the light emitting assembly is arranged on one side of the first surface of the wafer;
the light receiving assembly is arranged on one side of the second surface of the wafer; the first surface and the second surface are opposite surfaces, and the device functional layer of the wafer is formed on the second surface.
4. The wafer cleaning system of claim 1, wherein the light emitted by the light emitting assembly is non-visible light.
5. The wafer cleaning system of claim 1, wherein the processor is specifically configured to determine the rotation speed of the wafer according to a time difference between at least two times of receiving the first light intensity by the light receiving element.
6. The wafer cleaning system of claim 1, further comprising:
and adjusting the cleaning parameters according to the rotating speed of the wafer.
7. The wafer cleaning system of claim 6, wherein the wafer cleaning apparatus comprises: the cleaning device comprises a first cleaning brush, a second cleaning brush and rollers; wherein,
the wafer is placed in a gap formed between the first cleaning brush and the second cleaning brush; and the number of the first and second groups,
the roller for bearing the wafer and driving the wafer to rotate is positioned below the gap.
8. The wafer cleaning system of claim 7, wherein the wafer cleaning apparatus further comprises: a first nozzle and a second nozzle; wherein,
the first spray pipe and the second spray pipe are oppositely arranged above the side of the wafer;
the first spray pipe is matched with the first cleaning brush to clean the first surface of the wafer;
and the second spray pipe is matched with the second cleaning brush to clean the second surface of the wafer.
9. The wafer cleaning system of claim 7,
the first cleaning brush and the second cleaning brush which drive the wafer to rotate are both in contact with the wafer; the first cleaning brush is in contact with the first surface of the wafer, and a first included angle is formed between the first cleaning brush and the first surface of the wafer; the second cleaning brush contacts the second surface of the wafer, and a second included angle exists between the second surface of the wafer and the second cleaning brush.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122359242.8U CN216528758U (en) | 2021-09-27 | 2021-09-27 | Wafer cleaning system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122359242.8U CN216528758U (en) | 2021-09-27 | 2021-09-27 | Wafer cleaning system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116787253A (en) * | 2023-08-18 | 2023-09-22 | 浙江求是半导体设备有限公司 | Driving mechanism, wafer surface cleaning equipment and polishing equipment |
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2021
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116787253A (en) * | 2023-08-18 | 2023-09-22 | 浙江求是半导体设备有限公司 | Driving mechanism, wafer surface cleaning equipment and polishing equipment |
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