CN216507665U - Heating decorative picture - Google Patents

Heating decorative picture Download PDF

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CN216507665U
CN216507665U CN202120460163.3U CN202120460163U CN216507665U CN 216507665 U CN216507665 U CN 216507665U CN 202120460163 U CN202120460163 U CN 202120460163U CN 216507665 U CN216507665 U CN 216507665U
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heating
layer
picture
electrothermal film
temperature
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罗浩
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Fujian Jingene New Material Technology Co ltd
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Fujian Jingene New Material Technology Co ltd
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Abstract

The utility model relates to the technical field of decorative paintings, in particular to a heating decorative painting. The heating device comprises a picture layer, a base layer and a heating layer which are sequentially arranged from bottom to top, wherein an electrode used for connecting a power supply is arranged on the heating layer; the heating layer is a transparent N-type semiconductor nano electrothermal film. The transparent N-type semiconductor nano electrothermal film is used as a heating source of the heating layer, so that the heating temperature can reach 580 ℃, and compared with 180-200 ℃ in the prior art, the heating effect of the decorative picture can be greatly improved.

Description

Heating decorative picture
Technical Field
The utility model relates to the technical field of decorative paintings, in particular to a heating decorative painting.
Background
At present, the decoration picture that generates heat is mostly with the brilliant electric plate of carbon and graphite alkene as the source that generates heat, but graphite alkene generates heat, and the brilliant electric plate of carbon self generates heat and can only reach the low temperature of 180 ~ 200 degrees, and the temperature is lower to the decoration picture of heating, can not reach the heating effect well.
The heating film layer formed by the graphene and carbon crystal electric heating plates is unstable, easy to damage by collision and easy to oxidize, and has high attenuation degree and the like. The greatest defects of the heating layer and the picture layer of the graphene heating glass decorative picture and the carbon crystal electric heating plate decorative picture are that the picture layer is not afraid of water and moisture, the picture layer not only fades and can bubble after being placed for several years, and the phenomenon of hollow patterns occurs, and the heating layer is easily oxidized and quickly attenuates.
In addition, the decorative picture is printed by a UV printer, the temperature resistance limit of ink of the UV flatbed printer is between 150 ℃ and 240 ℃, and if the temperature is exceeded, the ink cannot be attached to the surface of an object, so that the pattern is peeled off and deformed. Also, the inks deteriorate when exposed to acids and alkalis, which in turn leads to distortion of the decorative picture pattern. And the printed picture is not wear-resistant and is easy to bump and grind. The graphite alkene glass decoration of uv printing is drawn, and the brilliant electric plate decoration of carbon is drawn fixed production only, and it generates heat the rete and can't tailor, can destroy the rete that generates heat, and the picture layer also can be scraped the flower, damages. Subsequent processing is difficult. The uv printing is performed by using low-temperature ink, and is only printed on the surface of the glass through drying at 70-100 ℃ in the manufacturing process. When the graphene heating glass decoration picture and the carbon crystal electric heating plate decoration picture are heated to more than 100 ℃, the picture layer is partially dissolved and emits irritant gas harmful to a human body.
The greatest defects of the heating layer and the picture layer of the graphene heating glass decorative picture and the carbon crystal electric heating plate decorative picture are that the picture layer is afraid of water and moisture, the picture layer not only fades and can also bubble after being placed for several years, and the phenomenon of hollow patterns occurs, and the heating layer is extremely easy to oxidize and quickly attenuate.
The transparent N-type semiconductor nano electrothermal film is a new generation of heating material. The heating mode of the heating wire is different from that of the traditional metal resistance wire. It has excellent physical and chemical properties of corrosion resistance, oxidation resistance, temperature shock resistance, insulation, flame retardance, moisture resistance, high hardness, no toxicity, no harmful radiation, no discharge of harmful substances and the like. It has zero inductive reactance, pure resistance heating and power factor of 1. And the surface-shaped heating breaks through the traditional resistance wire in a linear heating form, the heat transfer effect is good, and the electric heat conversion efficiency is high: 80% -97%, has better energy-saving advantage. The service life is long, the material is not easy to decay, and the accelerated life passes 5000 hours of test. The formula adopted by the electrothermal film liquid in the prior art ensures that the prepared electrothermal film has unstable effect and higher attenuation degree, and the film coating process is immature and cannot reach uniformity, so that the film layer is easily damaged under the condition of high-temperature dry burning.
Disclosure of Invention
Technical problem to be solved
In view of the above disadvantages and shortcomings of the prior art, the present invention provides a heating decorative picture, which uses a transparent N-type semiconductor nano electrothermal film as a heating source of a heating layer, and the heating temperature of the heating decorative picture can reach 580 ℃, thereby greatly improving the heating effect of the decorative picture.
(II) technical scheme
In order to achieve the purpose, the utility model adopts the main technical scheme that:
a heating decorative picture comprises a picture layer, a substrate layer and a heating layer which are sequentially arranged from bottom to top, wherein the heating layer is provided with an electrode for connecting a power supply; the heating layer is a transparent N-type semiconductor nano electrothermal film.
Further, the heating layer is a transparent N-type semiconductor nano electric heating film made of antimony chloride, tin chloride, stannous chloride, stannic oxide, stannous oxide, boron oxide and bismuth oxide.
Further, the substrate is glass or/and ceramic.
Further, the nano electrothermal film is transparent.
Further, the electrode is sintered and adhered to the nano electrothermal film at high temperature.
Further, the electrodes are soldered to wires by soldering, and the wires are connected to a power supply.
Further, the picture layer is printed on the surface of the base body by high-temperature colored glaze.
(III) advantageous effects
The utility model has the beneficial effects that:
1. according to the heating decorative picture, the transparent N-type semiconductor nano electric heating film is used as a heating source of the heating layer, the heating temperature can reach 580 ℃, and compared with the temperature of 180-200 ℃ in the prior art, the heating decorative picture can greatly improve the heating effect of the decorative picture.
2. The picture layer is printed on the surface of the substrate in a high-temperature colored glaze printing mode, can resist the high temperature of 600-670 ℃, and cannot release harmful substances such as radioactive substances or pigment to deteriorate in the long-term storage process. In addition, for the graphite alkene glass decoration painting that generates heat that uv printed, it can be tailor according to the shape wantonly, can not destroy the characteristic that generates heat on the layer that generates heat, but picture layer tempering, can hot bend: and (4) tempering the glass printed with the pattern by the high-temperature colored glaze printer, and cutting, drilling and edging the glass at will after the production is finished. The pattern printed after toughening is completely integrated with the matrix, and the color is more gorgeous. The picture layer is more environment-friendly and safer.
3. Waterproof and moistureproof. The heating layer and the picture layer are integrated with the base glass through high-temperature sintering, and the heating layer has stable chemical properties and cannot be oxidized and attenuated, so that the heating layer has the characteristics of water resistance and moisture resistance.
4. The service life is long. The heating layer can accelerate the life test at a high temperature of 5000 hours, the film layer can not be attenuated, the picture layer can resist the high temperature of 600-670 ℃, the picture can not change after being heated continuously, the color of the picture is basically unchanged after the picture is placed outdoors for ten years, the pigment and the glass are melted into a whole at the high temperature, and the service life of the picture is the same as that of a building.
5. The hardness of the picture layer and the electrothermal film is high: the risk of abrasion and scratch is avoided during transportation and production, the yield is increased, and the production cost is reduced.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
[ description of reference ]
1: a substrate layer;
2: picture layer
3: an electrothermal film;
4: an electrode;
5: an electric wire.
Detailed Description
For the purpose of better explaining the present invention and to facilitate understanding, the present invention will be described in detail by way of specific embodiments with reference to the accompanying drawings.
The utility model provides a heating decorative picture which comprises a picture layer, a substrate layer and a heating layer which are sequentially arranged from bottom to top, wherein an electrode used for being connected with a power supply is arranged on the heating layer; the heating layer is a transparent N-type semiconductor nano electrothermal film.
The heating temperature of the transparent N-type semiconductor nano electrothermal film can reach 580 ℃, so that the heating decorative picture has a better heating effect.
In order to improve the stability of the transparent N-type semiconductor nano electrothermal film, reduce the attenuation degree and improve the uniformity of a coating film, the heating layer is a transparent N-type semiconductor nano electrothermal film made of antimony chloride, tin chloride, stannous chloride, stannic oxide, stannous oxide, boron oxide and bismuth oxide. The nano electrothermal film is transparent and nano level and is integrated with glass or ceramics.
Preferably, the substrate is glass or/and ceramic. The substrate can be set into any shape according to requirements, and can be but not limited to a polygon, a cube and an irregular body.
Preferably, the nano electrothermal film is transparent.
Preferably, the electrode is sintered and adhered to the nano electrothermal film at high temperature. The electric heating film is attached to the electric heating film through high-temperature sintering, and the electrode positions can be connected with wires. The wiring power supply does not need to be divided into an anode and a cathode.
Preferably, the wire is soldered to the electrode by soldering, and the wire is connected to a power source. The connection point adopts the soldering technology.
Because the heating layer can conduct electricity, the periphery of the glass substrate is always contacted with other conductive appliances when in use, and the conductive heating layer at the periphery of the glass substrate is removed by sanding, laser or chemical corrosion to prevent electric leakage when in use.
Preferably, the picture layer is printed on the surface of the substrate by a high-temperature colored glaze printer.
Taking glass as an example of a substrate, after printed glass is baked at a high temperature of 700-800 ℃, an inorganic glaze (also called ink) is printed on the surface of the glass, then the glass is dried and tempered, and the glaze is sintered on the surface of the glass to form a picture layer. Therefore, the color is stable, the color fading is prevented, and the ultraviolet irradiation of sunlight is prevented. The picture layer and the glass are melted into a whole at high temperature, and the fading condition can not be generated by the irradiation of solar ultraviolet rays when the glass is used outdoors. The glaze layer is firm and is not easy to fall off, and the service life of the glaze layer is as long as that of a building.
The picture layer can resist the high temperature of 600-670 ℃, so the transparent N-type semiconductor nano electrothermal film is particularly suitable for the heating temperature of more than 580 ℃.
Preferably, the heating layer is a transparent N-type semiconductor nano electrothermal film made of antimony chloride, tin chloride, stannous chloride, stannic oxide, stannous oxide, boron oxide and bismuth oxide.
The preparation method comprises the following steps:
s1, adding stannous oxide, stannic chloride pentahydrate and an organic solvent into distilled water, fully and uniformly stirring, and filtering to obtain a solid and a filtrate;
s2, adding antimony chloride, hydrochloric acid, stannous chloride, an organic solvent, methyl acetate, boron oxide and bismuth oxide into the filtrate to obtain an electrothermal film treatment liquid;
s3, the obtained electrothermal film processing liquid is spread on the base body, and an electrothermal film is obtained on the surface of the base body.
Preferably, the first and second liquid crystal materials are,
which comprises the following steps:
s1 first mix: mixing antimony chloride, ethanol, acetic acid and stannous chloride to obtain the product;
s2 second mix: mixing ethanol, stannous oxide and stannic oxide;
s3 third mix: mixing tin chloride, acetic acid and methyl acetate;
s4 fourth mix: mixing glycerol, methyl acetate, boron oxide and bismuth oxide to obtain the mixture;
s5, putting the second mixture and the third mixture into 20-25 parts by weight of distilled water at the temperature of 30-50 ℃, and fully stirring for 20-40 minutes to obtain a filtered precipitated solid and a filtered liquid;
s6, adding the first mixture and the fourth mixture into the filtrate, adding 15-20% by mass of distilled water, and fully stirring for 15-30 minutes to obtain the n-type semiconductor nano electrothermal film treatment fluid with the transparent superlattice structure, wherein the proportioned treatment fluid can be stored in an environment at 5-15 ℃. When in use, the treatment solution is taken out and is placed in a room temperature environment for fully stirring until the temperature of the treatment solution reaches the room temperature.
S7, plating the obtained electrothermal film treatment liquid on a substrate to obtain an electrothermal film on the surface of the substrate.
The utility model treats tin oxide and then mixes and reacts with other materials for adjustment, reduces the temperature coefficient of the tin oxide and controls the electric conductivity within a stable range.
The light transmittance of the prepared semiconductor nano electrothermal film can be more than 85%, the surface of the film can uniformly generate heat, the film has far infrared beneficial to a human body, the film layer has no inductive reactance, can be connected with 1-450V alternating current or direct current voltage, the uncoated layer has good insulating property, is electrified for 1 minute at single-phase grounding 10000V voltage, can not be punctured up to 18000V when being tested to 18000V, and has no toxicity, no harmful radiation and no pollution, the film layer has no toxicity, no harmful radiation and no pollution, can be directly used in contact, can not convert light energy in the heating process, and has the electrothermal efficiency of more than 98.77 percent; it saves energy by 15% -60% compared with the common electric furnace wire;
the tin oxide and other components are compatible to have the function of a semiconductor, the antimony chloride, the bismuth oxide, the tin chloride, the stannous oxide and the boron oxide are blended, the resistance value can be improved by adding the boron oxide, the temperature coefficient of the electrothermal film can be reduced, the fluctuation of the electric conductivity within a certain range can be controlled by adding the bismuth oxide and other components, and the over-high or over-low electric conductivity is prevented.
The uncoated layer has good insulating property, can not be punctured when electrified for 1 minute under the single-phase grounding 10000V voltage, and can achieve water and electricity separation when applied to the field of water heating and direct contact when applied to the field of heating and dry burning.
In order to better understand the above technical solutions, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the utility model are shown in the drawings, it should be understood that the utility model may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the utility model to those skilled in the art.
Example 1
The treatment liquid of the semiconductor nano electrothermal film comprises the following components in parts by weight:
a first mixture: 0.6 part of antimony trichloride dihydrate, 5 parts of ethanol, 2-part of acetic acid and 8 parts of stannous chloride;
a second mixture: 5 parts of ethanol, 4 parts of stannous chloride and 9 parts of stannic oxide;
a third mixture: 10 parts of stannic chloride pentahydrate, 2 parts of acetic acid and 3 parts of methyl acetate;
a fourth mixture: 0.4 part of glycerol, 1 part of methyl acetate, 0.5 part of boron oxide and 0.5 part of bismuth oxide;
6 parts of hydrochloric acid;
40 parts of distilled water;
the above components have purity of above 99%.
The preparation method comprises the following steps:
s1 first mix: mixing the antimony trichloride dihydrate, the ethanol, the acetic acid and the stannous chloride in corresponding parts by weight;
s2 second mix: mixing the ethanol, the stannous oxide and the stannic oxide in the corresponding parts by weight;
s3 third mix: mixing the tin chloride, acetic acid and methyl acetate in corresponding weight parts;
s4 fourth blend: mixing the glycerol, the methyl acetate, the boron oxide and the bismuth oxide in corresponding parts by weight;
s5, putting the second mixture, the third mixture and 25 parts by weight of distilled water with the temperature of 40 ℃ into the mixture, and fully stirring the mixture for 20 minutes to obtain a filtered precipitated solid and a filtered liquid;
s6, adding the first mixture and the fourth mixture into the filtrate, adding 15 parts by weight of distilled water, and fully stirring for 30 minutes to obtain the n-type semiconductor nano electrothermal film treatment fluid with the transparent superlattice structure, wherein the proportioned treatment fluid can be stored in an environment at 10 ℃. When in use, the treatment solution is taken out and is placed in a room temperature environment for fully stirring until the temperature of the treatment solution reaches the room temperature.
S7, plating the obtained electrothermal film treating liquid on a substrate to obtain the electrothermal film on the surface of the substrate.
Example 2
The treatment liquid of the transparent n-type semiconductor nano electrothermal film comprises the following components in parts by weight:
a first mixture: 0.3 part of antimony trichloride dihydrate, 8 parts of ethanol, 3 parts of acetic acid and 4 parts of stannous chloride;
a second mixture: 7 parts of ethanol, 5 parts of stannous chloride and 3 parts of stannic oxide;
a third mixture: 10 parts of stannic chloride pentahydrate, 5 parts of acetic acid and 1 part of methyl acetate;
a fourth mixture: 0.5 part of glycerol, 1.5 parts of methyl acetate, 0.2 part of boron oxide and 0.8 part of bismuth oxide;
10 parts of hydrochloric acid;
35 parts of distilled water;
the above components have purity of above 99%.
The preparation method comprises the following steps:
s1 first mix: mixing the antimony trichloride dihydrate, the ethanol, the acetic acid and the stannous chloride in corresponding parts by weight;
s2 second mix: mixing the ethanol, the stannous oxide and the stannic oxide in the corresponding parts by weight;
s3 third mix: mixing the tin chloride, acetic acid and methyl acetate in corresponding weight parts;
s4 fourth mix: mixing the glycerol, the methyl acetate, the boron oxide and the bismuth oxide in corresponding parts by weight;
s5, putting the second mixture, the third mixture and 20 parts by weight of distilled water with the temperature of 50 ℃ into the mixture, and fully stirring the mixture for 30 minutes to obtain a filtered precipitated solid and a filtered liquid;
s6, adding the first mixture and the fourth mixture into the filtrate, adding 15 parts by weight of distilled water, and fully stirring for 15 minutes to obtain the n-type semiconductor nano electrothermal film treatment fluid with the transparent superlattice structure, wherein the proportioned treatment fluid can be stored in an environment at 15 ℃. When in use, the treatment solution is taken out and is placed in a room temperature environment for fully stirring until the temperature of the treatment solution reaches the room temperature.
S7, the obtained electrothermal film processing liquid is spread on the base body, and an electrothermal film is obtained on the surface of the base body.
Example 3
The treatment liquid of the transparent n-type semiconductor nano electrothermal film comprises the following components in parts by weight:
a first mixture: 0.5 part of antimony trichloride dihydrate, 3 parts of ethanol, 5 parts of acetic acid and 5 parts of stannous chloride;
a second mixture: 2 parts of ethanol, 8 parts of stannous chloride and 5 parts of stannic oxide;
a third mixture: 5 parts of stannic chloride pentahydrate, 6 parts of acetic acid and 1.5 parts of methyl acetate;
a fourth mixture: 0.1 part of glycerol, 3 parts of methyl acetate, 0.4 part of boron oxide and 0.3 part of bismuth oxide;
12 parts of hydrochloric acid;
40 parts of distilled water;
the above components have purity of above 99%.
The preparation method comprises the following steps:
s1 first mix: mixing the antimony trichloride dihydrate, the ethanol, the acetic acid and the stannous chloride in corresponding parts by weight;
s2 second mix: mixing the ethanol, the stannous oxide and the stannic oxide in the corresponding parts by weight;
s3 third mix: mixing the tin chloride, acetic acid and methyl acetate in corresponding weight parts;
s4 fourth mix: mixing the glycerol, the methyl acetate, the boron oxide and the bismuth oxide in corresponding parts by weight;
s5, putting the second mixture, the third mixture and 20 parts by weight of distilled water with the temperature of 30 ℃ into the mixture, and fully stirring the mixture for 40 minutes to obtain a filtered precipitated solid and a filtered liquid;
s6, adding the first mixture and the fourth mixture into the filtrate, adding 20 parts by weight of distilled water, and fully stirring for 20 minutes to obtain the n-type semiconductor nano electrothermal film treatment fluid with the transparent superlattice structure, wherein the proportioned treatment fluid can be stored in an environment at 5 ℃. When in use, the treatment solution is taken out and is placed in a room temperature environment for fully stirring until the temperature of the treatment solution reaches the room temperature.
S7, the obtained electrothermal film processing liquid is spread on the base body, and an electrothermal film is obtained on the surface of the base body.
Example 4
As shown in fig. 1: a heating decorative picture comprises a picture layer 2, a glass substrate layer 1 and a heating layer which are sequentially arranged from bottom to top, wherein two electrodes 4 used for connecting a power supply are arranged on the heating layer; the heating layer is a transparent N-type semiconductor nano electrothermal film 3 prepared in the embodiment 1-3.
Wherein, the electrode 4 is sintered and adhered on the transparent N-type semiconductor nano electrothermal film 3 at high temperature, and the electric wire is welded at the electrode 4 by adopting a tin soldering method and is connected with a power supply;
wherein, the picture layer 2 is printed on the surface of the glass substrate by high-temperature colored glaze. Specifically, after the glass substrate glass is baked at a high temperature of 700-800 ℃, inorganic glaze (also called printing ink) is printed on the surface of the glass, then the glass substrate glass is dried and tempered, and the glaze is sintered on the surface of the glass to form a picture layer 2.
Experimental data:
1. the test shows that: all indexes of the electrothermal film obtained in the embodiments 1-3 of the utility model are higher than standard requirements. The obtained electrothermal film can emit heat in far infrared, and the normal total reflectivity of the electrothermal film is 0.83 (+). The electrothermal radiation conversion efficiency is 72 percent, which is 20 percent higher than the standard requirement, and the electrothermal conversion efficiency is more than 98.77 percent (the electrothermal conversion efficiency is the electrothermal radiation conversion efficiency multiplied by 1.4). The relative radiation energy spectrum (infrared radiation wavelength range) of the electrified electric heating film is 5-20 mu m.
The obtained electrothermal film can reach 700 deg.C, and its electrothermal efficiency is above 98.77%. When the electric heating coil works for a short time under the condition of constant voltage, the current can be reduced, the power can be reduced, the energy-saving efficiency is high, and the electric heating coil saves energy by 15% -60% compared with a common resistance wire electric heating coil. And has the characteristics of strong acid and alkali resistance, no aging at high temperature, zero attenuation and the like. The heating device has the advantages of being simple and convenient to install, convenient to set, capable of being cut at will according to needs, capable of selecting different powers, flexible to lay on the ground and the wall, capable of being widely applied to all places needing heating, such as families, villas, offices, hotels, sweat steam rooms, delivery rooms, greenhouses and the like, free of occupying any indoor plane space, capable of enabling indoor space to be more flexibly arranged and placed with furniture, and capable of enjoying larger use space. The household appliance field can replace the traditional electric stove wire heater and is widely applied to electric ceramic stoves, ovens, water boilers, water heaters, water boilers and the like.
2. In the prior art, no relevant report is available for applying the semiconductor material to the field of high-temperature heating, and tests show that the temperature of the semiconductor material directly heated can not meet the requirement of high-temperature heating at seven hundred ℃, and the semiconductor material can not be applied to heating in higher fields such as a high-temperature heater and the like;
in the prior art, the transparent N-type semiconductor nano electrothermal film has high attenuation degree of resistance value in the heating process, is easy to attenuate, has reduced service life and has obvious attenuation phenomenon within 1 year.
The attenuation degree of the electrothermal film is low, and the attenuation condition of the electrothermal film obtained by the utility model is not detected in the existing detection technical means, and the attenuation time of the electrothermal film is much longer than 1 year.
3. Tests show that the decorative picture can be heated to a high temperature of 500 ℃, the heating temperature selectivity is high, and the decorative picture can be adjusted to the nearest heating applicable temperature through a controller. The heating glass has high appreciation and strong selectivity, can be processed into any shape and size, and can be printed on the heating glass by a customer by selecting a desired picture. The N-type semiconductor decorative glass capable of heating at high temperature has excellent physical and chemical stability in both the heating layer and the picture layer. The material has excellent physical and chemical properties of corrosion resistance, oxidation resistance, temperature shock resistance, insulation, flame retardance, moisture resistance, high hardness, no toxicity, no harmful radiation, no discharge of harmful substances and the like. The power factor during heating was 1. The inductive reactance is not available, the voltage input of 1V-1000V can be accepted, the power supply is not divided into positive and negative, and both alternating current and direct current can be used. The service life is long, the heating can be carried out continuously within the range of 500 ℃, the maximum heating can be carried out to the high temperature of 700 ℃ through tests, the electrothermal conversion efficiency is high, and the attenuation is hardly caused under the normal working state. The heating is carried out in a planar mode, the temperature is rapidly increased, the heating can be carried out to 90 percent of the maximum temperature (the test maximum temperature is 560 ℃) after the test temperature increase speed is 5 minutes, and the temperature increase speed is far less than 20 minutes of the qualified standard.
In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; either as communication within the two elements or as an interactive relationship of the two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, a first feature may be "on" or "under" a second feature, and the first and second features may be in direct contact, or the first and second features may be in indirect contact via an intermediate. Also, a first feature "on," "above," and "over" a second feature may be directly or obliquely above the second feature, or simply mean that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the second feature, or may simply mean that the first feature is at a lower level than the second feature.
In the description herein, the description of the terms "one embodiment," "some embodiments," "an embodiment," "an example," "a specific example" or "some examples" or the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Although embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and not to be construed as limiting the present invention and that those skilled in the art may make modifications, alterations, substitutions and alterations to the above embodiments within the scope of the present invention.

Claims (6)

1. The utility model provides a generate heat and decorate drawing which characterized in that: the heating device comprises a picture layer (2) and a substrate layer (1) which are arranged from bottom to top in sequence, wherein an electrode (4) for connecting a power supply is arranged on a heating layer; the heating layer is a transparent N-type semiconductor nano electrothermal film (3).
2. A heat generating decorative drawing as claimed in claim 1, wherein: the substrate layer (1) is glass or/and ceramic.
3. A heat generating decorative drawing as claimed in claim 1, wherein: the nano electrothermal film (3) is transparent.
4. A heat generating decorative drawing as claimed in claim 1, wherein: the electrode (4) is sintered and adhered to the nano electrothermal film (3) at high temperature.
5. A heat generating decorative drawing as claimed in claim 1, wherein: the electrode (4) is soldered to an electric wire (5) by soldering, and the electric wire (5) is connected to a power supply.
6. A heat generating decorative drawing as claimed in claim 2, wherein: the picture layer (2) is printed on the surface of the substrate layer (1) by a high-temperature colored glaze printer.
CN202120460163.3U 2021-03-03 2021-03-03 Heating decorative picture Active CN216507665U (en)

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CN202120460163.3U CN216507665U (en) 2021-03-03 2021-03-03 Heating decorative picture

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Application Number Priority Date Filing Date Title
CN202120460163.3U CN216507665U (en) 2021-03-03 2021-03-03 Heating decorative picture

Publications (1)

Publication Number Publication Date
CN216507665U true CN216507665U (en) 2022-05-13

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Application Number Title Priority Date Filing Date
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