CN216490320U - Heterojunction subassembly suitable for building integrated photovoltaic - Google Patents

Heterojunction subassembly suitable for building integrated photovoltaic Download PDF

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Publication number
CN216490320U
CN216490320U CN202122891233.3U CN202122891233U CN216490320U CN 216490320 U CN216490320 U CN 216490320U CN 202122891233 U CN202122891233 U CN 202122891233U CN 216490320 U CN216490320 U CN 216490320U
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China
Prior art keywords
heterojunction
building
film
heterojunction battery
water absorption
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CN202122891233.3U
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Chinese (zh)
Inventor
张鑫
范维涛
孙晨财
黄钧林
程晶
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Yicheng Xinneng Suzhou Technology Co ltd
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Yicheng Xinneng Suzhou Technology Co ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The utility model discloses a heterojunction assembly suitable for building integrated photovoltaic, which comprises a structure main body, wherein the structure main body comprises: the PVB film with low water absorption comprises a first glass substrate, a first PVB film with low water absorption, a crystal silicon wafer, a second PVB film with low water absorption and a second glass substrate which are sequentially stacked into a whole; by adopting the design of the type that the heterojunction battery pieces are transversely and longitudinally arranged in an aligned manner, the position of the outgoing line can be flexibly adjusted according to the building mode, and the resistance loss of the outgoing line is reduced; meanwhile, a novel low-water-absorption film is adopted, so that the conflict between the water absorption of a PVB adhesive film and the amorphous silicon hydrolysis of the heterojunction battery piece is avoided, and the PVB adhesive film which is in line with a photovoltaic building can be finally applied; the structure that the heterojunction battery piece is highly symmetrical is utilized, so that the double-sided rate of 90% or even 96% can be achieved, and finally the cost in the construction process of a power station is reduced.

Description

Heterojunction subassembly suitable for building integrated photovoltaic
Technical Field
The utility model relates to the field of solar photovoltaic power generation, in particular to a heterojunction module suitable for building-integrated photovoltaic.
Background
Building-integrated photovoltaics is a technology for integrating solar power generation products into buildings, and is different from a form in which a photovoltaic system is attached to a building. Building integrated photovoltaics can be divided into two main categories: one is the combination of photovoltaic arrays and buildings. The other is the integration of photovoltaic arrays with buildings. Such as a photovoltaic tile roof, a photovoltaic curtain wall, a photovoltaic daylighting roof and the like. In both of these ways, the integration of photovoltaic arrays with buildings is a common form, particularly with building roofing.
The heterojunction is a special PN junction, is formed by amorphous silicon and crystalline silicon materials, is formed by depositing an amorphous silicon film on crystalline silicon, belongs to one of N-type batteries, and is mostly not suitable for photovoltaic building standards at present.
Disclosure of Invention
In order to overcome the defects of the prior art, the utility model provides a heterojunction assembly suitable for building-integrated photovoltaic, which can solve the problems in the background art.
The technical scheme adopted by the utility model for solving the technical problems is as follows: a heterojunction assembly suitable for building-integrated photovoltaics, comprising a structural body comprising: the PVB film is characterized by comprising a first glass substrate, a first low-water-absorption PVB film, a crystal silicon wafer, a second low-water-absorption PVB film and a second glass substrate which are sequentially stacked into a whole;
the crystal silicon wafer is formed by transversely and longitudinally aligning and arranging a plurality of groups of heterojunction battery packs, the positive and negative electrodes of the adjacent heterojunction battery packs are reversed, and the heterojunction battery pack is formed by placing two heterojunction battery pieces with the positive and negative electrodes in the same direction;
and the two ends of the heterojunction battery pack are connected with transmission lines.
Furthermore, a unidirectional diode is arranged on the transmission line;
furthermore, two ends of the crystal silicon wafer are respectively provided with a leading-out anode and a leading-out cathode;
furthermore, conducting resin is arranged at the connecting position between the heterojunction battery packs.
Compared with the prior art, the utility model has the beneficial effects that: according to the heterojunction assembly applicable to photovoltaic building integration, the layout design that heterojunction cells are transversely and longitudinally aligned is adopted, the position of the outgoing line can be flexibly adjusted according to the building mode, and the resistance loss of the outgoing line is reduced; meanwhile, a novel low-water-absorption film is adopted, so that the conflict between the water absorption of a PVB adhesive film and the amorphous silicon hydrolysis of the heterojunction battery piece is avoided, and the PVB adhesive film which is in line with the photovoltaic building can be finally applied; the structure that the heterojunction battery piece is highly symmetrical is utilized, so that the double-sided rate of 90% or even 96% can be achieved, and finally the cost in the construction process of a power station is reduced.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the internal components of a silicon wafer according to the present invention.
Reference numbers in the figures: 1-a first glass substrate; 2-a first low water absorption PVB film; 3-a crystal silicon wafer; 4-a second low water absorption PVB film; 5-a second glass substrate; 6-heterojunction battery; 7-heterojunction cell pieces; 8-a transmission line; 9-unidirectional diode.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
A heterojunction assembly suitable for building-integrated photovoltaics according to the present invention is described in detail below with reference to fig. 1-2: a heterojunction assembly suitable for building-integrated photovoltaics, comprising a structural body comprising: the film comprises a first glass substrate 1, a first low water absorption PVB film 2, a crystal silicon wafer 3, a second low water absorption PVB film 4 and a second glass substrate 5 which are sequentially stacked into a whole;
the first low water absorption PVB film 2 and the second low water absorption PVB film 4 are prepared by adding ethyl silicate into polyvinyl butyral and preparing the polyvinyl butyral by a sol-gel catalysis method;
the crystal silicon wafer 3 is formed by transversely and longitudinally aligning and arranging a plurality of groups of heterojunction battery packs 6, the positive and negative electrodes of the adjacent heterojunction battery packs 6 are reversed, and the heterojunction battery pack 6 is formed by placing two heterojunction battery pieces 7 with the positive and negative electrodes in the same direction;
the layout design of the heterojunction cell 7 in transverse and longitudinal alignment can flexibly adjust the position of the outgoing line according to the building mode, so that the resistance loss of the outgoing line is reduced, and meanwhile, after the heterojunction cell 7 is combined with the tiling technology, the installation power per unit area is higher, and the actual power generation is much higher than that of a PERC component system;
and transmission lines 8 are connected and arranged at two ends of the heterojunction battery pack 6.
Preferably, the transmission line 8 is provided with a unidirectional diode 9, and the unidirectional diode 9 can prevent the current in the transmission line 8 from flowing backwards, so that the resistance can be reduced;
preferably, two ends of the crystal silicon wafer 3 are respectively provided with an extraction anode and an extraction cathode;
preferably, a conductive adhesive is arranged at the connection between the heterojunction battery packs 6.
The working principle is as follows: sunlight passes through the glass substrate and the PVB film with low water absorption to irradiate the crystal silicon wafer 3, the process of converting light energy into electric energy is completed on the crystal silicon wafer 3, electric energy is output outwards through the transmission line 8, solar power generation is realized, wherein the crystal silicon wafer 3 consists of a plurality of heterojunction battery pieces 7, and the two sides of the crystal silicon wafer 3 arranged in the middle can both receive solar energy due to the fact that the heterojunction battery pieces 7 have highly symmetrical structures.
In summary, the heterojunction assembly applicable to building integration of photovoltaic devices adopts a layout design that heterojunction cells are arranged in a transversely and longitudinally aligned manner, so that the position of the outgoing line can be flexibly adjusted according to a building mode, and the resistance loss of the outgoing line is reduced; meanwhile, a novel low-water-absorption film is adopted, so that the conflict between the water absorption of a PVB adhesive film and the amorphous silicon hydrolysis of the heterojunction battery piece is avoided, and the PVB adhesive film which is in line with the photovoltaic building can be finally applied; the structure that the heterojunction battery piece is highly symmetrical is utilized, so that the double-sided rate of 90% or even 96% can be achieved, and finally the cost in the construction process of a power station is reduced.
It will be evident to those skilled in the art that the utility model is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims (4)

1. A heterojunction assembly adapted for building-integrated photovoltaics, comprising a structural body, said structural body comprising: the PVB film is characterized by comprising a first glass substrate, a first low-water-absorption PVB film, a crystal silicon wafer, a second low-water-absorption PVB film and a second glass substrate which are sequentially stacked into a whole;
the crystal silicon wafer is formed by transversely and longitudinally aligning and arranging a plurality of groups of heterojunction battery packs, the positive and negative electrodes of the adjacent heterojunction battery packs are reversed, and the heterojunction battery pack is formed by placing two heterojunction battery pieces with the positive and negative electrodes in the same direction;
and the two ends of the heterojunction battery pack are connected with transmission lines.
2. The heterojunction assembly suitable for building-integrated photovoltaics according to claim 1, wherein: and the transmission line is provided with a one-way diode.
3. The heterojunction assembly suitable for building-integrated photovoltaics according to claim 1, wherein: and two ends of the crystal silicon wafer are respectively provided with a leading-out anode and a leading-out cathode.
4. The heterojunction assembly suitable for building-integrated photovoltaics according to claim 1, wherein: and conductive adhesive is arranged at the joint between the heterojunction battery packs.
CN202122891233.3U 2021-11-25 2021-11-25 Heterojunction subassembly suitable for building integrated photovoltaic Active CN216490320U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122891233.3U CN216490320U (en) 2021-11-25 2021-11-25 Heterojunction subassembly suitable for building integrated photovoltaic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122891233.3U CN216490320U (en) 2021-11-25 2021-11-25 Heterojunction subassembly suitable for building integrated photovoltaic

Publications (1)

Publication Number Publication Date
CN216490320U true CN216490320U (en) 2022-05-10

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CN (1) CN216490320U (en)

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