CN216408832U - Semiconductor laser light source - Google Patents
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- CN216408832U CN216408832U CN202123198431.8U CN202123198431U CN216408832U CN 216408832 U CN216408832 U CN 216408832U CN 202123198431 U CN202123198431 U CN 202123198431U CN 216408832 U CN216408832 U CN 216408832U
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Abstract
The utility model provides a semiconductor laser light source, comprising: the cooling device comprises a base, a cooling liquid inlet and a cooling liquid outlet, wherein the cooling liquid inlet and the cooling liquid outlet penetrate through the base; the light-transmitting lamp shade is positioned on one side of the base and is hermetically connected with the edge of the base, a cooling cavity is enclosed by the light-transmitting lamp shade and the base, and the cooling cavity is communicated with the cooling liquid inlet and the cooling liquid outlet; the light-reflecting lampshade is positioned on the outer side of the light-transmitting lampshade; and the fluorescent layer is positioned in the cooling cavity and is suitable for reflecting part of incident laser and exciting fluorescence to the inner wall of the reflecting lamp shade. The cooling liquid enters the cooling cavity through the cooling liquid inlet and flows out of the cooling cavity through the cooling liquid outlet so as to take away heat in the cooling cavity, water circulation cooling is formed, the heat dissipation effect is good, the semiconductor laser light source is prevented from being overheated abnormally, and the stability of the light source performance of the semiconductor laser is improved.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a semiconductor laser light source.
Background
The LED light source has the advantages of high efficiency, energy saving, low cost, etc., and is gradually replacing the traditional electric light source, becoming a fourth generation lighting product. However, the LED light source still has the problems of low brightness, poor light beam quality, inability to illuminate in long distance, limited air penetration capacity, and severe weather influence, and the like, and the problems are more serious for the illumination of airplanes and high-speed rail. The semiconductor laser which is homologous with the LED has the advantages of high efficiency, energy conservation and low cost, also has the advantages of high laser brightness and good beam quality, is expected to meet the requirements of airplanes and high-speed rail illumination, but has obvious heating problem when the semiconductor laser irradiates fluorescent materials in a light source, so that the performance of the light source is unstable.
SUMMERY OF THE UTILITY MODEL
Therefore, the technical problem to be solved by the present invention is to overcome the problem of unstable performance of the semiconductor laser light source in the prior art, thereby providing a semiconductor laser light source.
The utility model provides a semiconductor laser light source, comprising: the cooling device comprises a base, a cooling liquid inlet and a cooling liquid outlet, wherein the cooling liquid inlet and the cooling liquid outlet penetrate through the base; the light-transmitting lamp shade is positioned on one side of the base and is hermetically connected with the edge of the base, a cooling cavity is enclosed by the light-transmitting lamp shade and the base, and the cooling cavity is communicated with the cooling liquid inlet and the cooling liquid outlet; the light-reflecting lampshade is positioned on the outer side of the light-transmitting lampshade; and the fluorescent layer is positioned in the cooling cavity and is suitable for reflecting part of incident laser and exciting fluorescence to the inner wall of the reflecting lamp shade.
Optionally, the light-reflecting lampshade is detachably connected with the edge of the base.
Optionally, the fluorescent layer has a light receiving surface and a backlight surface opposite to each other; the semiconductor laser light source further includes: the reflection increasing layer is positioned on the backlight surface; or the reflection increasing layer is positioned on part of the outer surface of the light-transmitting lampshade, and the reflection increasing layer is arranged opposite to the backlight surface; or the reflection increasing layer is positioned on part of the inner surface of the light-transmitting lampshade, and the reflection increasing layer is arranged opposite to the backlight surface.
Optionally, the reflection increasing layer includes a triangular prism reflection increasing layer, a concave mirror reflection increasing layer or a reflection film reflection increasing layer.
Optionally, the fluorescent layer comprises a yttrium aluminum garnet ceramic fluorescent layer.
Optionally, a focus of the reflector lamp cover is located in the fluorescent layer, and the reflector lamp cover is adapted to reflect divergent light emitted from the fluorescent layer into parallel light beams.
Optionally, the shape of the light reflecting lampshade is parabolic; the shape of one side of the base, which faces the light reflecting lampshade, is concave.
Optionally, the method further includes: the bracket fixes one side of the base facing the fluorescent layer and the fluorescent layer; or the surface of one side of the fluorescent layer, which is back to the base, is fixedly connected with the light-transmitting lampshade.
Optionally, the cover wall of the reflector lamp cover is provided with a light incident port through which the emitted laser light is incident on the fluorescent layer; alternatively, the base has a light incident port through which the emitted laser light is incident on the fluorescent layer.
Optionally, the method further includes: and the semiconductor laser is positioned on the outer side of the lampshade, and laser generated by the semiconductor laser is suitable for passing through the light incidence port.
Optionally, the semiconductor laser is adapted to generate blue laser, the blue laser is adapted to excite the fluorescent layer to generate yellow laser, and the light source of the semiconductor laser is a white light source.
Optionally, a lens is disposed in the light entrance port, and the lens is adapted to shape the incident laser light.
The technical scheme of the utility model has the following beneficial effects:
1. according to the semiconductor laser light source provided by the utility model, after part of incident laser enters the fluorescent layer, the fluorescent light with the color different from that of the incident laser is excited, and part of the incident laser is reflected by the fluorescent layer, so that the fluorescent light and the reflected incident laser are mixed together to form required illumination light. The light-transmitting lampshade has light transmission and low loss of laser brightness, the fluorescent layer is suitable for reflecting part of incident laser and exciting the fluorescent light to the inner wall of the light-reflecting lampshade, and the light-reflecting lampshade can increase the brightness of the laser, so that a light source with high brightness and good light beam quality can be obtained. Set up in the base and run through the coolant liquid import and the coolant liquid export of base, light lampshade with the base encloses into the cooling chamber, and the coolant liquid passes through in the coolant liquid import gets into the cooling chamber and flows the cooling chamber through the coolant liquid export in order to take away the heat in the cooling chamber, forms water circulative cooling, and the fluorescent layer is placed in the cooling chamber, consequently is good to the radiating effect of fluorescent layer, prevents that semiconductor laser light source from taking place overheated unusually, is favorable to improving the stability of semiconductor laser light source performance.
2. Furthermore, the reflecting lampshade is detachably connected with the edge of the base, so that the integral structure formed by the base and the light-transmitting lampshade can be replaced.
3. Furthermore, the fluorescent layer comprises an yttrium aluminum garnet ceramic fluorescent layer, so that the fluorescent layer has the fluorescent characteristic and keeps the advantage of good heat dissipation.
4. Furthermore, the focus of the reflecting lamp shade is positioned in the fluorescent layer, and the reflecting lamp shade is suitable for reflecting divergent light emitted by the fluorescent layer into parallel light beams, so that high-brightness light beams can be formed, the light beams generated by the semiconductor laser light source have good penetrating power, and can be transmitted in a long distance and suitable for the illumination of airplanes and high-speed rail running.
5. Further, the shape of the reflecting lampshade is a paraboloid. The parabolic reflecting lampshade can change light emitted by the fluorescent layer at the focus position into parallel light, and the quality of light beams emitted by the light source of the semiconductor laser is optimized.
6. Further, the inner wall of the light-transmitting lamp shade and the fluorescent layer are fixed by the support, or the surface of one side, back to the base, of the fluorescent layer is fixedly connected with the light-transmitting lamp shade, so that the stability of the fluorescent layer in the cooling cavity is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 to 6 are schematic structural diagrams of semiconductor laser light sources according to different embodiments of the present invention;
fig. 7 is a schematic view of the position relationship between the fluorescent layer and the reflection-increasing layer when the reflection-increasing layer is a concave mirror reflection-increasing layer.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides a semiconductor laser light source, please refer to fig. 1, which includes:
a base 9, wherein a cooling liquid inlet 7 and a cooling liquid outlet 8 penetrating through the base 9 are arranged in the base 9;
the light-transmitting lamp shade 2 is positioned on one side of the base 9 and is hermetically connected with the edge of the base 9, the light-transmitting lamp shade 2 and the base 9 enclose a cooling cavity, and the cooling cavity is communicated with the cooling liquid inlet 7 and the cooling liquid outlet 8;
the light-reflecting lampshade 1 is positioned on the outer side of the light-transmitting lampshade 2;
and the fluorescent layer 3 is positioned in the cooling cavity, and the fluorescent layer 3 is suitable for reflecting part of incident laser and exciting fluorescence to the inner wall of the reflecting lamp shade 1.
The base 9 comprises a metal base, so that the cooling liquid inlet 7 and the cooling liquid outlet 8 are easier to machine and form, and the base 9 and the light-transmitting lamp shade 2 are convenient to seal.
Set up in base 9 and run through coolant liquid import 7 and coolant liquid export 8 of base 9, light lampshade 2 with base 9 encloses into the cooling chamber, and the coolant liquid gets into in the cooling chamber through coolant liquid import 7 and flows out the cooling chamber through coolant liquid export 8 in order to take away the heat in the cooling chamber, forms water circulative cooling, and fluorescent layer 3 places in the cooling chamber, and consequently the radiating effect to fluorescent layer 3 is good, prevents that the semiconductor laser light source from taking place overheated unusually, is favorable to improving the stability of semiconductor laser light source performance.
In this embodiment, the semiconductor laser light source further includes: a support 5, wherein the support 5 fixes the side of the base 9 facing the fluorescent layer 3 and the fluorescent layer 3. In one embodiment, the support 5 is a transparent support, which prevents the support 5 from blocking the light beam, which further improves the quality of the light beam.
Referring to fig. 1 to 5, in the different embodiments shown in fig. 1 to 5, the wall of the reflector housing 1 has a light incident port 6 for incident laser light, and the distance from the light incident port 6 to the base 9 is smaller than the distance from the fluorescent layer 3 to the base 9.
Referring to fig. 6, in the embodiment shown in fig. 6, the base 9d has a light incident port 6d for allowing incident laser light to enter the fluorescent layer 3.
The light entrance port is provided with a lens which is suitable for shaping the incident laser, and the lens can be a convex lens or an aspherical mirror and can collimate or collect the incident laser or image the incident laser according to a certain multiple.
The fluorescent layer 3 has opposite light receiving and backlight surfaces.
The semiconductor laser light source further includes: the reflection increasing layer 4 is positioned on the backlight surface; or, the reflection-increasing layer 4 is located on a part of the outer surface of the light-transmitting lampshade 2, and the reflection-increasing layer 4 is arranged opposite to the backlight surface; or, the reflection increasing layer 4 is located on a part of the inner surface of the light-transmitting lampshade 2, and the reflection increasing layer 4 is arranged opposite to the backlight surface.
As shown in fig. 1, in the embodiment shown in fig. 1, the light receiving surface of the fluorescent layer 3 faces the base 9, and since the semiconductor laser light source does not employ the reflection increasing layer 4, the light beam emitted from the backlight surface of the fluorescent layer 3 is scattered and lost as the transmission distance increases. The ZEMAX software is adopted to simulate the semiconductor laser light source provided by the embodiment, and the receiving area is 9 multiplied by 9m at a distance of 500cm from the semiconductor laser light source2The light intensity of the test point is 46% of the light source intensity under the test conditions of (1).
As shown in fig. 2, in the embodiment shown in fig. 2, the light receiving surface of the fluorescent layer 3 faces the base 9, the reflection-increasing layer 4 is disposed on the backlight surface of the fluorescent layer 3, and the reflection-increasing layer 4 includes a triangular prism reflection-increasing layer or a concave mirror reflection-increasing layer, referring to fig. 7, when the reflection-increasing layer 4 is a concave mirror reflection-increasing layer, the fluorescent layer 3 needs to be disposed at the center 10 of the concave mirror reflection-increasing layer, so that the divergent light beam incident on the surface of the concave mirror reflection-increasing layer will return to the fluorescent layer 3 to further excite the fluorescent layer 3, which is beneficial for improving the conversion efficiency of the fluorescent layer 3; when the reflection-increasing layer 4 is a triangular prism reflection-increasing layer, the long edge of the triangular prism reflection-increasing layer is required to be longer than the length of the fluorescent layer 3, so that divergent light emitted from all positions of the fluorescent layer 3 can be reflected to the surface of the reflecting lampshade 1; in this embodiment, the reflection-increasing layer 4 is a concave mirror reflection layer, and when a divergent light beam emitted from the back surface of the fluorescent layer 3 enters the surface of the concave mirror reflection-increasing layer, the divergent light beam returns to the fluorescent layer 3 to further excite the fluorescent layer 3, which is beneficial to improving the conversion efficiency of the fluorescent layer 3, and the divergent light beam emitted from the back surface of the fluorescent layer 3 is shaped by the reflection-increasing layer 4. The ZEMAX software is adopted to simulate the semiconductor laser light source provided by the embodiment, and the receiving area is 9 multiplied by 9m at a distance of 500cm from the semiconductor laser light source2The light intensity of the test point was 65.2% of the light source intensity, which was improved compared to the example of fig. 1.
As shown in fig. 3, in the embodiment shown in fig. 3, the light receiving surface of the fluorescent layer 3 faces the base 9, the reflection-increasing layer 4a is located on a part of the outer surface of the light-transmitting lampshade 2, because the reflection-increasing layer 4a is located on the outer surface of the light-transmitting lampshade 2, the process of forming the reflection-increasing layer 4a is simple and convenient, and the area of the reflection-increasing layer 4a is reasonably selected according to actual conditions, on one hand, it should be ensured that the wide-angle divergent light beam emitted from the fluorescent layer 3 can be reflected to the light-reflecting lampshade 1 as far as possible, and on the other hand, the shielding of the reflection-increasing layer 4a on the light beam should be reduced as far as possible. Since the reflection-increasing layer 4a is not in contact with the support 5 and the fluorescent layer 3, the embodiment of fig. 2 has the advantage that the reflection-increasing layer 4a is prevented from pressing the support 5, and the stability of the light source of the semiconductor laser can be improved.
As shown in fig. 4, in the embodiment shown in fig. 4, the reflection-increasing layer 4 is a reflective film reflection-increasing layer. The light-receiving surface of the fluorescent layer 3 faces the base 9 and passes throughThe coating method of the evaporation process forms a reflection-increasing layer 4b on the backlight surface of the fluorescent layer 3. Compared with the embodiment in FIG. 3, the method has the advantages that the light beam can be completely prevented from being blocked by the reflection increasing layer 4b, and the ZEMAX software is adopted to simulate the semiconductor laser light source provided by the embodiment, and the distance between the semiconductor laser light source and the semiconductor laser light source is 500cm, and the receiving area is 9 multiplied by 9m2Under the test conditions of (1), the light intensity of the test point is 64.5% of the light source intensity, which is improved compared with the embodiment in fig. 1 and is not much different from the embodiment in fig. 2.
As shown in fig. 5, in the embodiment shown in fig. 5, the reflection-increasing layer 4c is formed on the backlight surface of the fluorescent layer 3c by a film coating method, and the fluorescent layer 3c and the reflection-increasing layer 4c are attached to the inner side wall of the light-transmitting lampshade 2c, so that the bracket is removed, the preparation process and the structure of the semiconductor laser light source are simplified, the structure of the semiconductor laser light source is more stable, and in addition, the volume of the whole structure formed by the light-transmitting lampshade 2c and the base 9 is favorably reduced.
As shown in fig. 6, in the embodiment shown in fig. 6, the light receiving surface of the fluorescent layer 3d faces the base 9d, the reflection layer 4d is formed on the backlight surface of the fluorescent layer 3d by coating, the fluorescent layer 3d and the reflection layer 4d are attached to the inner wall of the light transmitting cover 2d facing the base 9d, and the light incident port 6d is provided in the base 9d and is not provided in the light reflecting cover 1d, so that the structure of the semiconductor laser light source is further simplified.
The cooling cavity is suitable for being filled with cooling liquid.
In one embodiment, the cooling fluid is cooling water. In other embodiments, the cooling liquid can also be selected from other cooling liquids.
In one embodiment, the reflective lamp shade 1 is detachably connected with the edge of the base 9, so that the integral structure formed by the base 9 and the light-transmitting lamp shade 2 can be replaced conveniently, the maintenance is convenient, and the practicability is high. In other embodiments, the reflector housing 1 is fixedly connected to the edge of the base 9.
The material of the light-transmitting lampshade 2 is uniform, the loss to light beams is small, and the structure is firm, so that the fluorescent layer 3 in the cooling cavity is protected from being damaged by the external environment.
In this embodiment, the light-transmitting lampshade 2 is a transparent light-transmitting lampshade. In one embodiment, the transmittance of the light-transmitting envelope 2 for the diverging light emitted by the fluorescent layer 3 is greater than or equal to 95%. In this embodiment, the light-transmitting lamp housing 2 has light-transmitting property and has low loss of laser brightness, and the fluorescent layer 3 is adapted to reflect a part of incident laser and excite fluorescent light to the inner wall of the light-reflecting lamp housing 1.
In this embodiment, the light reflecting shade 1 can increase the brightness of the laser light, so that a light source with high brightness and good beam quality can be obtained. The inner surface of the reflecting lampshade 1 is polished specially, and is coated with a reflecting film which can be a dielectric film or a metal film, and the surface of one side of the base 9 facing the reflecting lampshade 1 is also coated with the dielectric film or the metal film, so that incident light beams can be reflected out without loss. In one embodiment, the reflectivity of the light reflecting shade 1 to the light transmitted through the light transmitting shade 2 is greater than or equal to 99%.
After entering the fluorescent layer 3, part of the incident laser light excites fluorescent light with a color different from that of the incident laser light, and part of the incident laser light is reflected by the fluorescent layer 3, so that the fluorescent light and the reflected incident laser light are mixed together to form required illumination light. The reflection increasing layer 4 can reflect the large-angle fluorescent light emitted by the fluorescent layer 3 towards the reflection increasing layer 4 to the reflecting lamp shade 1.
Part of incident laser is reflected by the fluorescent layer 3, part of the incident laser passes through the fluorescent layer 3 and then is reflected to the fluorescent layer 3 by the reflection increasing layer 4, and the part of the incident laser reflected to the fluorescent layer 3 by the reflection increasing layer 4 excites the fluorescent layer 3 to emit fluorescent light, so that the light conversion efficiency and the utilization rate of the fluorescent layer 3 are improved, and the light quality is optimized.
After the fluorescent layer 3 is excited by the incident light, the particles in the fluorescent layer 3 absorb the incident light, transition from the ground state to the excited state, and immediately de-excite the fluorescent light.
In an embodiment, the thickness of the fluorescent layer 3 is 0.2mm to 2mm, such as 0.2mm, 0.5mm, 1mm, 1.5mm, 1.8mm or 2 mm. If the thickness of the fluorescent layer 3 is more than 2mm, heat dissipation is not facilitated; if the thickness of the fluorescent layer 3 is less than 0.2mm, the applicability of the semiconductor laser light source is not strong.
The semiconductor laser light source further includes: the semiconductor laser (not shown in the figure) that is located the lamp shade outside, for example, high power semiconductor laser, semiconductor laser preferably small-size semiconductor laser, and it is fixed to facilitate the installation, also makes whole light source system miniaturized, the laser that semiconductor laser produced is suitable for to pass through light entrance 6, specifically, semiconductor laser's light-emitting window can directly be fixed at light entrance 6, also can fix at light entrance 6 through the mode of fiber connector in the optical fiber output mode. In a specific embodiment, the power of the semiconductor laser is equal to or greater than 100 mW.
In one embodiment, the semiconductor laser is adapted to generate blue laser light, the blue laser light is adapted to excite the fluorescent layer 3 to generate yellow light beams, that is, after the fluorescent layer 3 is irradiated by the blue laser light, the particles absorb the blue light to transition from a ground state to an excited state and immediately de-excite the yellow light beams, and the blue laser light and the yellow light beams are mixed to obtain white light, in this case, the semiconductor laser light source is a white light source, the light emitted by the fluorescent layer 3 includes white light, the light reflected to the inner surface of the reflector 1 by the reflector 1 is shaped, the blue laser light which is not absorbed by the fluorescent layer 3 is reflected back to the fluorescent layer 3 through the reflection increasing layer 4 and further converted into the yellow light beams, so that the conversion efficiency of the fluorescent layer 3 and the utilization rate of the fluorescent layer 3 are improved, and the chromaticity of the white light can be optimized.
In one embodiment, the phosphor layer 3 comprises a yttrium aluminum garnet ceramic phosphor layer (YAG phosphor layer), which has phosphor properties while maintaining the advantage of good heat dissipation. In other embodiments, the fluorescent layer 3 can be selected from other fluorescent layers as long as the laser light incident on the fluorescent layer 3 can be excited by the fluorescent layer 3 and the incident laser light has different color and the wavelength can be matched to generate white light.
In one embodiment, the focus of the reflector lamp shade 1 is located in the fluorescent layer 3, and the reflector lamp shade 1 is suitable for reflecting divergent light emitted from the fluorescent layer 3 into parallel light beams, so that high-brightness light beams are favorably formed, the light beams generated by the semiconductor laser light source have good penetrating power, and can be transmitted in a long distance and suitable for aircraft and high-speed rail running illumination.
In one embodiment, the shape of the light reflecting shade 1 is parabolic. The parabolic reflecting lampshade 1 can change light emitted by the fluorescent layer 3 at the focus position into parallel light, optimize the quality of light beams emitted by the semiconductor laser light source, improve the brightness of the light beams, namely increase the penetrating power of the light beams, so that the semiconductor laser light source can be suitable for different weather environments.
In one embodiment, the side of the base 9 facing the light-reflecting shade 1 is concave in shape, in which case the shape of the light-transmitting shade 2 may be a three-quarter sphere matching the base 9.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the utility model.
Claims (12)
1. A semiconductor laser light source, comprising:
the cooling device comprises a base, a cooling liquid inlet and a cooling liquid outlet, wherein the cooling liquid inlet and the cooling liquid outlet penetrate through the base;
the light-transmitting lamp shade is positioned on one side of the base and is hermetically connected with the edge of the base, a cooling cavity is enclosed by the light-transmitting lamp shade and the base, and the cooling cavity is communicated with the cooling liquid inlet and the cooling liquid outlet;
the light-reflecting lampshade is positioned on the outer side of the light-transmitting lampshade;
and the fluorescent layer is positioned in the cooling cavity and is suitable for reflecting part of incident laser and exciting fluorescence to the inner wall of the reflecting lamp shade.
2. A semiconductor laser light source as claimed in claim 1 wherein the light reflecting lamp cover is removably attached to an edge of the base.
3. A semiconductor laser light source as claimed in claim 1 wherein the phosphor layer has opposing light-receiving and backlight faces;
the semiconductor laser light source further includes: the reflection increasing layer is positioned on the backlight surface;
or the reflection increasing layer is positioned on part of the outer surface of the light-transmitting lampshade, and the reflection increasing layer is arranged opposite to the backlight surface;
or the reflection increasing layer is positioned on part of the inner surface of the light-transmitting lampshade, and the reflection increasing layer is arranged opposite to the backlight surface.
4. A semiconductor laser light source as claimed in claim 3 wherein the reflection increasing layer comprises a triangular prism reflection increasing layer, a concave mirror reflection increasing layer, or a reflective film reflection increasing layer.
5. A semiconductor laser light source as claimed in claim 1 wherein the phosphor layer comprises a yttrium aluminum garnet ceramic phosphor layer.
6. A semiconductor laser light source as claimed in claim 1 wherein the focal point of the reflector shield is located in the phosphor layer, the reflector shield being adapted to reflect diverging light exiting the phosphor layer into parallel beams.
7. A semiconductor laser light source as claimed in claim 1 wherein the shape of the light reflecting shade is parabolic; the shape of one side of the base, which faces the light reflecting lampshade, is concave.
8. A semiconductor laser light source as claimed in claim 1 further comprising: the bracket fixes one side of the base facing the fluorescent layer and the fluorescent layer;
or the surface of one side of the fluorescent layer, which is back to the base, is fixedly connected with the light-transmitting lampshade.
9. A semiconductor laser light source as claimed in claim 1, wherein a wall of the reflector lamp housing has a light incident port through which the incident laser light is incident on the phosphor layer;
alternatively, the base has a light incident port through which the emitted laser light is incident on the fluorescent layer.
10. A semiconductor laser light source as claimed in claim 9 further comprising: and the semiconductor laser is positioned on the outer side of the lampshade, and laser generated by the semiconductor laser is suitable for passing through the light incidence port.
11. A semiconductor laser light source as claimed in claim 10 wherein the semiconductor laser is adapted to generate blue laser light which is adapted to excite the phosphor layer to generate yellow laser light, the semiconductor laser light source being a white light source.
12. A semiconductor laser light source as claimed in claim 10 wherein a lens is provided in the light entrance port, the lens being adapted to shape the incident laser light.
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| CN202123198431.8U CN216408832U (en) | 2021-12-17 | 2021-12-17 | Semiconductor laser light source |
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| CN202123198431.8U CN216408832U (en) | 2021-12-17 | 2021-12-17 | Semiconductor laser light source |
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