CN216281433U - Oxygenating flange and water-cooled semiconductor tail gas treatment combustion chamber - Google Patents

Oxygenating flange and water-cooled semiconductor tail gas treatment combustion chamber Download PDF

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Publication number
CN216281433U
CN216281433U CN202122128143.9U CN202122128143U CN216281433U CN 216281433 U CN216281433 U CN 216281433U CN 202122128143 U CN202122128143 U CN 202122128143U CN 216281433 U CN216281433 U CN 216281433U
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water
chamber
cooling layer
flange
combustion chamber
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周永君
丁云鑫
李剑聪
苏小海
刘黎明
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Hangzhou Huixiang Electro Hydraulic Technology Development Co ltd
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Hangzhou Huixiang Electro Hydraulic Technology Development Co ltd
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Abstract

The utility model discloses an oxygen supplementing flange and a water-cooled semiconductor tail gas treatment combustion chamber, and aims to overcome the defect that the CDA consumed by the conventional combustion chamber is overlarge. The utility model discloses an including epicoele and cavity of resorption, the cavity of resorption includes inner chamber, last heat preservation and last water-cooling layer from inside to outside in proper order, and the epicoele includes inner chamber, lower heat preservation and lower water-cooling layer from inside to outside in proper order, and epicoele and cavity of resorption can be dismantled and connect and form the open container in upper portion, go up water-cooling layer and lower water-cooling layer through the tube coupling, are equipped with the water inlet on the lower water-cooling layer, are equipped with the delivery port on the last water-cooling layer, and the epicoele is equipped with the oxygenating flange. The device reduces the input gas, reduces the combustion and explosion phenomena through the reaction of pure oxygen and tail gas, and the device operates in a more static posture to avoid interfering with the preorder device.

Description

Oxygenating flange and water-cooled semiconductor tail gas treatment combustion chamber
Technical Field
The utility model relates to the field of semiconductor production, in particular to an oxygen supplementing flange and a water-cooled semiconductor tail gas treatment combustion chamber.
Background
In the production and manufacturing process of integrated circuits, some of the process flow modules are: chemical vapor deposition, etching, ion implantation and diffusion, and amorphous silicon thin film solar, liquid crystal, thin film PECVD processes, and the like all use a large amount of special process gases. These process gases are generally hydrogen as a carrier gas, and after participating in the process reaction, are discharged in the form of exhaust gas, and the types thereof can be classified into: toxic, acidic, basic, pyrophoric, flammable, corrosive, and PFCS and VOC gases, among others.
Some of the poisonous and harmful gases originally used as process raw materials or reaction byproducts have the danger of corroding various pipelines, the danger of fire explosion when meeting or accumulating higher concentration with other hazards, and the dangers of poisoning operators, damaging atmospheric environment and the like. To avoid these hazards, these gases must be treated to render them harmless and, after meeting national atmospheric emission standards, they can be discharged into the atmosphere. At present, in factories in the semiconductor industry, the photovoltaic industry and the like, a tail gas treatment device is mounted at the rear end of process equipment for treating the hazardous special gases.
The existing combustion chamber adopts a mode of injecting CDA (clean ryair), namely dry air, as a combustion improver and a cooling mode, the CDA is injected from the outside of a heat preservation layer of the combustion chamber, permeates layer by layer under the action of air pressure, and finally enters the combustion chamber to participate in combustion. For this reason, the insulating layer and the upper cavity need to be made of porous materials, and the structure integrates cooling and combustion improver injection, so that the space saving effect is achieved, but the mode also has negative effects: the porous heat-insulating layer causes the temperature which can be borne by the heat-insulating layer to be lower, and the most efficient combustion temperature cannot be reached; a large air pressure difference is required to be maintained to avoid tail gas leakage, so that the consumption of CDA is huge, the cooling form of air cooling is not efficient enough, and the temperature of the outer wall is easy to cause personal injury.
Therefore, the application aims to realize a novel water-cooled semiconductor tail gas treatment combustion chamber which changes the composition of combustion-supporting gas and modifies the cooling form.
Disclosure of Invention
The utility model overcomes the defect of overlarge CDA consumption of the existing combustion chamber, and provides an oxygen supplementing flange and a water-cooled semiconductor tail gas treatment combustion chamber, which can realize high-efficiency combustion and high-efficiency cooling of a shell and reduce the consumption of CDA.
Another technical effect that the application reached is, reduced the atmospheric pressure in the combustion chamber for tail gas is leading-in more easily. The third technical effect that the application reached is through the burning of pure oxygen and tail gas, has reduced the phenomenon of blasting, has reduced the vibration for the preorder production step of combustion chamber, has improved the quality of semiconductor product.
In order to solve the technical problems, the utility model adopts the following technical scheme:
the utility model provides an oxygenating flange, includes along the gas injection pipeline of radial arrangement and sets up the buffering passageway in the position that is close to the flange inner wall, and the gas injection pipeline injects the pure oxygen into buffering passageway, and the inner wall of buffering passageway is equidistant to be equipped with a plurality of gas injection delivery outlets. The gas injection pipelines are distributed at two ends of the oxygen supplementing flange in the radial direction. The structure is used for transmitting pure oxygen, and the transmission pure oxygen of bundling nature is to the buffer channel in, and the rethread buffer channel is with even the space transmission to flange inside of oxygen.
Preferably, the buffer channel is annular, the oxygen supplementing flange is provided with at least two gas injection pipelines, the buffer channel is provided with a plurality of baffles corresponding to the gas injection pipelines, and the baffles are obliquely arranged to guide pure oxygen to flow along the same direction of the buffer channel. The structure makes the pure oxygen along unidirectional circumferential direction on buffering passageway, improves the gas flow of gas injection delivery outlet output everywhere, improves the stability of burning, reduces the vibration.
Preferably, the pure oxygen is passed through the gas injection outlet to form an annular gas flow ring, the direction of the gas injection outlet being tangential to said gas flow ring. The combustion chamber is connected with a combustion head, the combustion head is provided with a tail gas inlet along a circular array, the airflow ring is adapted to the ring shape of the tail gas inlet of the array, and the structure enables the combustion efficiency to be higher. The annular airflow ring flows along the moving direction of the airflow in the buffer channel and forms stable rotating airflow. The flow direction of the airflow ring is the same as the flow direction of the oxygen in the buffer channel, and the structure can increase the flow speed of the airflow ring and form more stable cyclone and more stable combustion.
Preferably, the oxygen supplementing flange is provided with a water inlet slot at a position close to the outer edge, the oxygen supplementing flange is provided with two water cooling cavities, and the water inlet slot is communicated with the water cooling cavities. Because the device needs to contact a heat source, the device is provided with a water cooling cavity and a corresponding water inlet slot. The water cooling cavity is oval or round.
The utility model provides a water-cooled semiconductor tail gas treatment combustion chamber, including epicoele and cavity of resorption, the epicoele includes the inner chamber from inside to outside in proper order, go up heat preservation and last water-cooling layer, the cavity of resorption includes inner chamber down by inside to outside in proper order, heat preservation and lower water-cooling layer down, the epicoele can be dismantled with the cavity of resorption and form the open container in upper portion, go up water-cooling layer and water-cooling layer through the tube coupling down, be equipped with the water inlet on the water-cooling layer down, be equipped with the delivery port on the water-cooling layer of going up, water inlet and delivery port setting are in the same one side of combustion chamber, the pipeline setting on water-cooling layer is at the opposite side of combustion chamber about the intercommunication, the epicoele is equipped with the oxygenating flange.
Whole combustion chamber is the open cylindrical barrel that is in upper portion, and upper and lower inner chamber adopts ceramic structure for directly bearing the part that the high temperature that the tail gas burning produced influences in this application, and upper and lower heat preservation is used for isolated inside and outside temperature, and the water-cooling layer acts on outmost shell that can constitute with the stainless steel material of people contact, avoids making adult's scald. The oxygen content in the air is 21 percent, the nitrogen content is 79 percent, the total gas amount can be reduced by 79 percent by replacing pure oxygen, the burning and explosion phenomena of waste gas in a cavity can be reduced, and the pressure fluctuation is reduced. The treatment of the gas generally contains a large amount of hydrogen and other waste gas, the hydrogen combustion generates a large amount of heat, and the combustion-supporting gas in the combustion chamber is changed from air to oxygen, so that the combustion-supporting gas amount is reduced, the temperature of the combustion chamber is increased rapidly, and the original inner wall structure of the porous ceramic combustion chamber cannot bear the high temperature. By replacing the ceramic material with the solid ceramic material, the tolerance temperature is greatly improved, higher combustion temperature is reached, and better combustion efficiency is achieved.
Preferably, air interlayers are respectively arranged between the upper heat-insulating layer and the upper water-cooling layer, and between the lower heat-insulating layer and the lower water-cooling layer, metal plate fixing pieces are arranged in the air interlayers, and deformation gaps are respectively arranged between the metal plate fixing pieces and the upper and lower heat-insulating layers, and between the upper and lower heat-insulating layers and the upper and lower inner cavities.
The multilayer heat insulation measure has been had in this application, through setting up the air interlayer of relative static state, has reduced the hot-air and has flowed, and the heat preservation also can slow down heat transfer, reduces the burden to the water-cooling layer. The deformation clearance adapts to the deformation of each part after high temperature.
Preferably, the oxygen supplementing flange is arranged at the bottom of the upper cavity, the distance between the inner walls of the upper cavity and the lower cavity to the axis is shorter than that between the gas injection output port and the axis, and the lower part of the upper cavity is provided with a boss to prevent combustion fire from sinking and directly contacting the inner wall of the oxygen supplementing flange. Because the setting of structure, the place that oxygen abundance is the biggest in the combustion chamber is located the well upper portion of combustion chamber, gets the position is compared and is directly set up the mixture that can avoid causing the blasting phenomenon with tail gas at last chamber top. In order to avoid the reverse play of flame in the gas injection pipeline, the buffer channel is arranged to be sunken compared with the upper inner cavity and the lower inner cavity.
Preferably, the oxygen supplementing flange is provided with a water inlet slot corresponding to the upper water cooling layer, the oxygen supplementing flange is provided with two water cooling cavities, and the water inlet slot is communicated with the water cooling cavities. The water flow entering from the lower cavity enters the upper cavity through the pipeline, the upper cooling layer is communicated with the water cooling cavities through the water inlet grooves, and the two water cooling cavities are arranged.
Preferably, the upper cavity and the lower cavity are both provided with a protective gas input pipe, and the protective gas input pipe inputs nitrogen gas between the upper heat-insulating layer and the upper water-cooling layer, and between the lower heat-insulating layer and the lower water-cooling layer. Nitrogen is input through a protective gas input pipe, a positive air pressure is maintained, and tail gas is prevented from leaking.
Preferably, the upper inner cavity and the lower inner cavity are formed by stacking a plurality of solid ceramic plates from top to bottom. The split type composition is also used for providing a deformation gap of the upper inner cavity.
Compared with the prior art, the utility model has the beneficial effects that: (1) the device reduces the input gas; (2) by the reaction of pure oxygen and tail gas, the explosion phenomenon is reduced, the device operates in a more static posture, and the interference of the preorder device is avoided.
Drawings
FIG. 1 is a perspective view of the present invention;
FIG. 2 is a cross-sectional view of the present invention;
FIG. 3 is a front view of the upper chamber of the present invention with the upper chamber, upper insulation layer and sheet metal fixture removed;
FIG. 4 is a cross-sectional view taken at A-A in FIG. 3;
FIG. 5 is a cross-sectional view taken at B-B of FIG. 3;
in the figure:
the device comprises an upper cavity 1, a lower cavity 2, an upper inner cavity 3, an upper heat-insulating layer 4, an upper water-cooling layer 5, a lower inner cavity 6, a lower heat-insulating layer 7, a lower water-cooling layer 8, a pipeline 9, a water inlet 10, a water outlet 11, an air interlayer 12, a sheet metal fixing part 13, an oxygen supplementing flange 14, a gas injection pipeline 15, a buffer channel 16, a gas injection output port 17, a baffle plate 18, an airflow ring 19, a water inlet open groove 20, a water-cooling cavity 21, a protective gas input pipe 22, air holes 23, a solid ceramic plate 24 and a partition plate 25.
Detailed Description
The present disclosure is further described with reference to the following drawings and examples.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In the present disclosure, terms such as "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "side", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only relational terms determined for convenience in describing structural relationships of the parts or elements of the present disclosure, and do not refer to any parts or elements of the present disclosure, and are not to be construed as limiting the present disclosure.
In the present disclosure, terms such as "fixedly connected", "connected", and the like are to be understood in a broad sense, and mean either a fixed connection or an integrally connected or detachable connection; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present disclosure can be determined on a case-by-case basis by persons skilled in the relevant art or technicians, and are not to be construed as limitations of the present disclosure.
Example 1:
an oxygen supplementing flange 14 is shown in fig. 4 and 5, and is annular, and comprises a gas injection pipeline 15 arranged along the radial direction and a buffer channel 16 arranged at a position close to the inner wall of the flange, wherein the gas injection pipeline 15 injects pure oxygen into the buffer channel 16, and a plurality of gas injection output ports 17 are arranged on the inner wall of the buffer channel 16 at equal intervals. The gas injection pipes 15 are distributed at both ends of the oxygen supplementing flange 14 in the radial direction. The structure is used for transmitting pure oxygen, the pure oxygen is transmitted to the buffer channel 16 in a bundling manner, and then the oxygen is uniformly transmitted to the space inside the flange through the buffer channel 16. The buffer channel 16 is annular, the oxygen supplementing flange 14 is provided with at least two gas injection pipelines 15, the buffer channel 16 is provided with a plurality of baffles 18 corresponding to the gas injection pipelines 15, and the baffles 18 are obliquely arranged to guide pure oxygen to flow along the same direction of the buffer channel 16. The structure enables pure oxygen to circumferentially rotate on the buffer channel 16 along a single direction, improves the gas flow output by the gas injection output ports 17 at all positions, improves the combustion stability and reduces the vibration. The pure oxygen passes through the gas injection outlet 17 to form an annular gas flow ring 19, and the direction of the gas injection outlet 17 is tangential to the gas flow ring 19. The combustion chamber is connected with a combustion head, the combustion head is provided with a tail gas inlet along a circular array, the airflow ring 19 is adapted to the ring shape of the tail gas inlet of the array, and the structure enables the combustion efficiency to be higher. The annular air flow ring 19 flows in the direction of movement of the air flow in the buffer channel 16 and forms a steady rotating air flow. The oxygen supplementing flange is provided with a water inlet slot 20 at a position close to the outer edge, the oxygen supplementing flange is provided with two water cooling cavities 21, and the water inlet slot 20 is communicated with the water cooling cavities 21. As the device needs to be contacted with a heat source, a water cooling cavity 21 and a corresponding water inlet slot 20 are arranged. The water cooling cavity 21 is oval or circular.
Example 2:
the utility model provides a water-cooled semiconductor tail gas treatment combustion chamber, as shown in fig. 1 to 3, includes epicoele 1 and cavity of resorption 2, the epicoele includes inner chamber 3 from inside to outside in proper order, goes up heat preservation 4 and last water-cooling layer 5, the cavity of resorption includes inner chamber 6 down, heat preservation 7 and lower water-cooling layer 8 down from inside to outside in proper order, epicoele 1 and cavity of resorption 2 can be dismantled and connect and form the open container in upper portion, go up water-cooling layer 5 and lower water-cooling layer 8 and connect through pipeline 9, be equipped with water inlet 10 on the lower water-cooling layer 8, be equipped with delivery port 11 on the upper water-cooling layer 5. The upper and lower chambers 3&6 are each formed by stacking a plurality of solid ceramic plates 24 from top to bottom. The split type composition is also adopted to provide a deformation gap of the upper inner cavity 3. A sealing gasket is also pressed between the upper cavity 1 and the lower cavity 2 and can be sealed by a graphite gasket or an O-ring. The upper chamber 1 and the lower chamber 2 are fastened by a double-side buckle. The water inlet 10 and the water outlet 11 are arranged on the same side of the combustion chamber, and the pipeline 9 for communicating the upper water-cooling layer 5 and the lower water-cooling layer 8 is arranged on the other side of the combustion chamber.
An oxygen supplement flange 14 is arranged on the upper cavity 1, and the upper cavity 1 and the oxygen supplement flange 14 are connected in a detachable or integrated mode. The oxygen supplementing flange 14 is provided with a gas injection pipeline 15 which is arranged along the radial direction, the upper cavity 1 is provided with an annular buffer channel 16, the gas injection pipeline 15 injects pure oxygen into the buffer channel 16, the inner wall of the buffer channel 16 is provided with a plurality of gas injection output ports 17 at equal intervals, and the pure oxygen enters the combustion chamber through the gas injection output ports 17. The gas injection pipes 15 are distributed at both ends of the oxygen supplementing flange 14 in the radial direction. The oxygen supplementing flange 14 is arranged at the bottom of the upper cavity 1, and the inner walls of the upper cavity 3 and the lower cavity 6 are closer to the axis than the gas injection output port 17. The lower part of the upper inner cavity is provided with a boss to prevent the burning fire from sinking and directly contacting the inner wall of the oxygen supplementing flange and protect the gas injection outlet of the oxygen supplementing flange from high-temperature erosion. Due to the arrangement of the structure, the position with the maximum oxygen abundance in the combustion chamber is positioned at the middle upper part of the combustion chamber, and the position is compared with the position which is directly arranged at the top of the upper chamber 1, so that the combustion and explosion phenomena caused by the mixing of the oxygen and the tail gas can be avoided. In order to prevent the flame from flowing backward into the gas injection pipe 15, the buffer passage 16 is recessed from the upper and lower chambers 3& 6. At least two gas injection pipelines 15 are arranged on the upper cavity 1, a plurality of baffles 18 corresponding to the gas injection pipelines 15 are arranged on the buffer channel 16, and the baffles 18 are obliquely arranged to guide pure oxygen to flow along the same direction of the buffer channel 16. The structure enables pure oxygen to circumferentially rotate on the buffer channel 16 along a single direction, improves the gas flow output by the gas injection output ports 17 at all positions, improves the combustion stability and reduces the vibration. The pure oxygen passes through the gas injection outlet 17 to form an annular gas flow ring 19, and the direction of the gas injection outlet 17 is tangential to the gas flow ring 19. The combustion chamber is connected with a combustion head, the combustion head is provided with a tail gas inlet along a circular array, the airflow ring 19 is adapted to the ring shape of the tail gas inlet of the array, and the structure enables the combustion efficiency to be higher. The annular air flow ring 19 flows in the direction of movement of the air flow in the buffer channel 16 and forms a steady rotating air flow. The oxygen supplementing flange 14 is provided with a water inlet slot 20 corresponding to the position of the upper water cooling layer 5, the oxygen supplementing flange 14 is provided with two water cooling cavities 21, and the water inlet slot 20 is communicated with the water cooling cavities 21. The water flow entering from the lower cavity 2 enters the upper cavity 1 through the pipeline 9, the upper cooling layer is communicated with the water cooling cavities 21 through the water inlet grooves 20, and the two water cooling cavities 21 are arranged because the oxygen supplementing flange 14 is completely arranged to be hollow, and the strength cannot meet the requirement, so that the structure is adopted.
Go up heat preservation 4 and last water-cooling layer 5, be equipped with air interlayer 12 between heat preservation 7 and the lower water-cooling layer 8 down respectively, be equipped with panel beating mounting 13 in the air interlayer 12, panel beating mounting 13 all is equipped with the deformation clearance with upper and lower heat preservation 4&7 and upper and lower inner chamber 3&6 between. The upper cavity 1 and the lower cavity 2 are both provided with a protective gas input pipe 22, the protective gas input pipe 22 inputs nitrogen into the air interlayer 12, and the metal plate fixing piece 13 is provided with a plurality of air holes 23. Nitrogen is input through the protective gas input pipe 22 to maintain a positive pressure, and the tail gas is prevented from leaking.
The multilayer heat insulation measure is provided, the air interlayer 12 which is relatively static is arranged, hot air flowing is reduced, the heat insulation layer can also slow down heat transfer, and the burden on the water cooling layer is reduced. The deformation clearance adapts to the deformation of each part after high temperature.
Whole combustion chamber is the open cylindrical barrel that is in upper portion, and upper and lower inner chamber 3&6 are the part that directly bears the high temperature influence that the tail gas burning produced, adopts ceramic structure in this application, and upper and lower heat preservation 4&7 are used for isolated inside and outside temperature, and the water-cooling layer acts on outmost shell that can constitute with the stainless steel material of people's contact, avoids making adult's scald. The oxygen content in the air is 21 percent, the nitrogen content is 79 percent, the total gas amount can be reduced by 79 percent by replacing pure oxygen, the burning and explosion phenomena of waste gas in a cavity can be reduced, and the pressure fluctuation is reduced. The treatment of the gas generally contains a large amount of hydrogen and other waste gas, the hydrogen combustion generates a large amount of heat, and the combustion-supporting gas in the combustion chamber is changed from air to oxygen, so that the combustion-supporting gas amount is reduced, the temperature of the combustion chamber is increased rapidly, and the original inner wall structure of the porous ceramic combustion chamber cannot bear the high temperature. By replacing the ceramic material with the solid ceramic material, the tolerance temperature is greatly improved, higher combustion temperature is reached, and better combustion efficiency is achieved.
Example 3:
example 2 also has the following features on the basis of example 1:
as shown in fig. 5, the water-cooling chamber 21 is arc-shaped, and the water inlet slots 20 are formed at positions near both ends of the water-cooling chamber 21. One end of the water inlet slot 20 is arranged at a position close to the pipeline 9, and the other end is arranged at a position close to the water outlet 11. The partition plate 25 is arranged in the upper water cooling layer 5, and the water cooling cavity 21 is partitioned left and right by the partition plate 25, so that water entering from the pipeline 9 can flow out from the water outlet 11 after entering the water cooling cavity 21 and then flowing out from the water inlet slot 20 at the other side of the partition plate 25. The structure avoids the phenomenon that a non-flowing area appears in the water cooling layer, so that the local temperature is too high, and water flow passes through each part of the water cooling layer to achieve a good cooling effect.
The above-described embodiments are merely preferred embodiments of the present invention, which is not intended to be limiting in any way, and other variations and modifications are possible without departing from the scope of the utility model as set forth in the appended claims.

Claims (8)

1. The utility model provides an oxygenating flange, characterized by includes along the gas injection pipeline of radial arrangement and sets up the buffering passageway in the position near the flange inner wall, and the gas injection pipeline injects the pure oxygen into buffering passageway, and the inner wall of buffering passageway is equidistant to be equipped with a plurality of gas injection delivery outlets.
2. The oxygen supplementing flange according to claim 1, wherein the buffer channel is annular, the oxygen supplementing flange is provided with at least two gas injection pipelines, the buffer channel is provided with a plurality of baffles corresponding to the gas injection pipelines, and the baffles are obliquely arranged to guide pure oxygen to flow along the same direction of the buffer channel.
3. An oxygen supplementing flange according to claim 1, wherein the pure oxygen passes through the gas injection outlet to form an annular gas flow ring, and the direction of the gas injection outlet is tangential to said gas flow ring.
4. An oxygen supplementing flange according to any one of claims 1 to 3, wherein the oxygen supplementing flange is provided with a water inlet slot near the outer edge, the oxygen supplementing flange is provided with two water cooling cavities, and the water inlet slot is communicated with the water cooling cavities.
5. A water-cooled semiconductor tail gas treatment combustion chamber is characterized by comprising an upper chamber and a lower chamber, wherein the upper chamber sequentially comprises an upper inner chamber, an upper heat preservation layer and an upper water cooling layer from inside to outside, the lower chamber sequentially comprises a lower inner chamber, a lower heat preservation layer and a lower water cooling layer from inside to outside, the upper chamber and the lower chamber are detachably connected and form a container with an open upper part, the upper water cooling layer and the lower water cooling layer are connected through a pipeline, the lower water cooling layer is provided with a water inlet, the upper water cooling layer is provided with a water outlet, the water inlet and the water outlet are arranged on the same side of the combustion chamber, a pipeline for communicating the upper water cooling layer with the lower water cooling layer is arranged on the other side of the combustion chamber, and the upper chamber is provided with an oxygen supplementing flange according to any one of claims 1 to 3.
6. The water-cooled semiconductor tail gas treatment combustion chamber according to claim 5, wherein the oxygen supplementing flange is disposed at the bottom of the upper chamber, the inner walls of the upper chamber and the lower chamber are closer to the axis than the gas injection outlet, and a boss is disposed at the lower portion of the upper chamber to prevent the combustion flame from directly contacting the inner wall of the oxygen supplementing flange.
7. The water-cooled semiconductor tail gas treatment combustion chamber according to claim 5, wherein the upper chamber and the lower chamber are provided with shielding gas input pipes, and the shielding gas input pipes input nitrogen gas between the upper insulating layer and the upper water-cooling layer, and between the lower insulating layer and the lower water-cooling layer.
8. The water-cooled semiconductor tail gas treatment combustion chamber according to claim 5, wherein the upper and lower inner chambers are formed by stacking a plurality of solid ceramic plates from top to bottom.
CN202122128143.9U 2021-09-02 2021-09-02 Oxygenating flange and water-cooled semiconductor tail gas treatment combustion chamber Active CN216281433U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122128143.9U CN216281433U (en) 2021-09-02 2021-09-02 Oxygenating flange and water-cooled semiconductor tail gas treatment combustion chamber

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Application Number Priority Date Filing Date Title
CN202122128143.9U CN216281433U (en) 2021-09-02 2021-09-02 Oxygenating flange and water-cooled semiconductor tail gas treatment combustion chamber

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Publication Number Publication Date
CN216281433U true CN216281433U (en) 2022-04-12

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