CN216237369U - Liquid gap real-time monitoring device in single crystal furnace and single crystal furnace with same - Google Patents
Liquid gap real-time monitoring device in single crystal furnace and single crystal furnace with same Download PDFInfo
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- CN216237369U CN216237369U CN202121510041.7U CN202121510041U CN216237369U CN 216237369 U CN216237369 U CN 216237369U CN 202121510041 U CN202121510041 U CN 202121510041U CN 216237369 U CN216237369 U CN 216237369U
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- 239000007788 liquid Substances 0.000 title claims abstract description 132
- 239000013078 crystal Substances 0.000 title claims abstract description 74
- 238000012806 monitoring device Methods 0.000 title claims abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000012544 monitoring process Methods 0.000 claims abstract description 13
- 238000005259 measurement Methods 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
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Abstract
The utility model discloses a liquid gap real-time monitoring device in a single crystal furnace and the single crystal furnace with the same, the single crystal furnace comprises a main chamber, a crucible for bearing silicon melt is arranged in the main chamber, the silicon melt comprises a silicon melt surface, a crystal bar is arranged above the silicon melt surface, a guide cylinder is arranged above the crucible and surrounds the crystal bar, the silicon melt, the guide cylinder and the crystal bar define a first space, and the liquid gap real-time monitoring device comprises: the liquid level measuring device is arranged right above the first space and measures to obtain a first distance between the liquid level measuring device and the surface of the silicon melt; and the control device is connected with the liquid level measuring device, records the first distance in real time, and calculates to obtain the liquid opening distance according to the second preset distance. Therefore, the liquid port distance is accurately calculated according to the preset second distance by accurately measuring the first distance, and the online real-time monitoring of the liquid port distance is realized.
Description
Technical Field
The utility model relates to the technical field of crystal growth, in particular to a liquid gap real-time monitoring device in a single crystal furnace and the single crystal furnace with the same.
Background
The liquid opening distance refers to the distance from the end surface of the lower end of the guide cylinder of the single crystal furnace close to the surface of the silicon melt to the liquid level of the silicon melt. The liquid gap is of great importance, which not only influences the cost and the quality of the single crystal, but also relates to the safe production. Inaccurate liquid gap test can cause the heat shield to immerse in the molten silicon, endanger equipment and operating personnel safety. In cost, the whole single crystal production flow comprises temperature adjustment, seeding, shouldering, shoulder turning, equal diameter and ending, and accurate liquid gap distance is required. Crucible heel needs to be supplemented in the later shouldering stage and the equal-diameter initial stage, and the liquid port distance is reduced from large to small, so that the shouldering survival rate is improved. The liquid mouth distance is kept stable in the process of constant diameter, the radial temperature gradient of a growth interface of a thermal field is ensured to be small, the temperature fluctuation of the liquid level is reduced, and the stable growth of crystal pulling is ensured. The accurate control of the liquid mouth distance can reduce the wire breakage rate, improve the unit yield and reduce the non-silicon cost of crystal pulling. Qualitatively, the oxygen content, carbon content in the single crystal, and diffusion of metal from the heat shield into the melt are all related to the liquid gap distance. The liquid gap influences the Marangoni convection on the surface of the melt, and further influences the oxygen and carbon contents. The distance between the current water-cooling heat shield and the graphite heat shield is 1-5mm, the distance between the lower edge of the water-cooling heat shield and the liquid level is 30-80mm, the stainless steel is arranged on the outer wall of the water-cooling heat shield, and the metal iron is easy to diffuse to the melt indirectly or directly through the lower edge of the heat shield. The liquid mouth distance is small, which directly causes the crystal to be polluted.
At present, the liquid gap is generally indirectly judged by adopting the inverted image of the heat shield, and the measurement result is influenced by the roughness of the surface of the lower edge of the heat shield and the silicon sticking and damage of the lower edge of the heat shield. In addition, some liquid port distance test schemes, such as seed crystal positioning along the installation under a heat shield, are not directly measured, so that the interference factors are more, and the error is larger.
Disclosure of Invention
In order to solve one of the technical problems, the application provides a liquid mouth distance real-time monitoring device in a single crystal furnace and the single crystal furnace, a liquid level measuring device is arranged right above a first space defined by a liquid level, a guide cylinder and a crystal bar, a first distance between the liquid level measuring device and the liquid level is accurately measured, the liquid mouth distance can be accurately calculated according to a second preset distance, the result is accurate and reliable, and the liquid mouth distance can be monitored on line in real time.
In one aspect of the utility model, the utility model discloses a liquid gap real-time monitoring device in a single crystal furnace, the single crystal furnace comprises a main chamber, a crucible for bearing silicon melt is arranged in the main chamber, the silicon melt comprises a silicon melt surface, a crystal bar is arranged above the silicon melt surface, a guide cylinder is arranged above the crucible and surrounds the crystal bar, the silicon melt, the guide cylinder and the crystal bar define a first space, and the liquid gap real-time monitoring device comprises: the liquid level measuring device is arranged right above the first space and measures to obtain a first distance between the liquid level measuring device and the surface of the silicon melt; and the control device is connected with the liquid level measuring device, records the first distance in real time, and calculates to obtain the distance between the liquid opening and the liquid opening according to the second preset distance.
From this, through at the liquid level, set up liquid level measuring device directly over the first space that draft tube and crystal bar are injectd, the first distance between accurate measurement liquid level measuring device and the liquid level through setting up controlling means, controlling means is according to the first distance that liquid level measuring device measured and is obtained, according to predetermined second distance, can accurate calculation liquid mouth apart from, on-line real time monitoring liquid mouth apart from.
In some specific embodiments, the second predetermined distance is a vertical distance between the liquid level measuring device and a lower end surface of the guide cylinder close to the surface of the silicon melt.
In some specific embodiments, the liquid level measuring device is a laser rangefinder.
In some specific embodiments, the laser rangefinder emits the laser beam at an emission angle to the liquid surface, the emission angle being 90 degrees.
In some specific embodiments, the laser rangefinder comprises:
the laser emission module sends a laser beam to the liquid level to form a laser spot on the surface of the silicon melt; the laser receiving module receives a reflection line formed by the mirror reflection of the laser spot;
and the measurement data recording and transmitting module is connected with the control device and is used for recording and uploading measurement data.
In some specific embodiments, the single crystal furnace includes a sub-chamber including a main body of a hollow structure and an upper end portion, the main body of the sub-chamber communicates with the main chamber, the upper end portion of the sub-chamber corresponds to a part of the first space, and the liquid level measuring device is disposed on the upper end portion of the sub-chamber corresponding to the first space.
In some specific embodiments, the single crystal furnace comprises a sub-chamber, the sub-chamber is a hollow main body, a level adjusting device is arranged at the upper end of the sub-chamber, the level adjusting device corresponds to a part of the first space, and the liquid level measuring device is arranged on the level adjusting device corresponding to the first space.
In some specific embodiments, a cooling device is disposed around the liquid level measuring device.
In another aspect of the utility model, the utility model discloses a single crystal furnace, which comprises the liquid opening distance real-time monitoring device.
Additional aspects and advantages of the utility model will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the utility model.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a front view of one embodiment of a single crystal furnace of the present invention;
fig. 2 is a top view of fig. 1.
Reference numerals:
single crystal furnace 100
A main chamber 1, a first space 1a,
Crucible 2, silicon melt 3, silicon melt surface 3a,
A liquid level measuring device 4, a laser beam 4a, a laser spot 4b,
A control device 5, a guide shell 6, a lower end surface 6a of the guide shell,
A crystal bar 7, a sub-chamber 8, a level adjusting device 9, a cooling device 10,
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
The following disclosure provides many different embodiments, or examples, for implementing different features of the utility model. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the applicability of other processes and/or the use of other materials.
Hereinafter, a real-time monitoring device for liquid gap distance in a single crystal furnace according to a first aspect of the present invention will be described with reference to the accompanying drawings,
as shown in fig. 1-2, the single crystal furnace includes a main chamber 1, a crucible 2 for carrying a silicon melt 3 is disposed in the main chamber, the silicon melt 3 includes a silicon melt surface 3a, a crystal rod 7 is disposed above the silicon melt surface 3a, a guide cylinder 6 is disposed above the crucible 2, the guide cylinder 6 is disposed around the crystal rod 7, the silicon melt 3, the guide cylinder 6 and the crystal rod 7 define a first space 1a, where the defined first space 1a is a first space channel formed by the silicon melt 3 above the surface, an outer side of the crystal rod 7 and an end of the guide cylinder 6 closest to the crystal rod 7, and as shown in fig. 2, the first space 1a is located between the guide cylinder 6 and the crystal rod 7 to form an annular space.
Liquid mouth apart from real-time monitoring device includes: a liquid level measuring device 4, wherein the liquid level measuring device 4 is arranged right above the first space 1a, and the liquid level measuring device 4 measures a first distance L between the liquid level measuring device 4 and the surface 3a of the silicon melt; as shown in fig. 1-2, the position directly above the first space 1a means that the liquid level measuring device 4 is disposed at a position facing the first space 1a in the axial direction of the single crystal furnace 100, and the liquid level measuring device 4 can directly measure the distance from the surface 3a of the silicon melt to obtain the first distance L.
And the control device 5 is connected with the liquid level measuring device 4, and the control device 5 records the first distance L in real time and calculates the distance d between the liquid port and the liquid port according to the second preset distance. The liquid mouth distance d is the distance from the lower end surface 6a of the guide shell 6 of the single crystal furnace close to the surface of the silicon melt to the liquid level 3a of the silicon melt, the liquid level measuring device 4 measures the distance L between the liquid level and the surface 3a of the silicon melt, and the second preset distance can be a fixed value or a real-time conversion value according to the second preset distance. For example, in the crystal process, the position of the guide shell is fixed, the second preset distance is a vertical distance h between the liquid level measuring device 4 and the lower end surface 6a of the guide shell, and at this time, the second preset distance is equal to h, and the value of h is unchanged. For another example, during the crystal growth process, the guide shell is raised or lowered in real time, and then the second preset distance is the vertical distance h between the liquid level measuring device 4 and the lower end surface 6a of the guide shell, and at this time, the second preset distance is equal to h, and the value of h is changed. Through the setting of the control device 5, the distance between the liquid ports can be simply and accurately obtained through real-time calculation according to the distance L measured by the liquid level measuring device.
From this, through at the liquid level, set up liquid level measuring device directly over the first space that draft tube and crystal bar are injectd, the first distance between accurate measurement liquid level measuring device and the liquid level through setting up controlling means, controlling means is according to the first distance that liquid level measuring device measured and is obtained, according to predetermined second distance, can accurate calculation liquid mouth apart from, on-line real time monitoring liquid mouth apart from.
Optionally, the liquid level measuring device 4 is a laser range finder, which can accurately and efficiently measure the distance, effectively overcome the small fluctuation on the surface of the silicon melt, reduce the error to the minimum, and obtain the most accurate distance measurement data.
Optionally, the laser range finder emits laser light to the surface of the silicon melt at an emission angle, which is 90 degrees. That is, as shown in fig. 1, the laser distance measuring device emits a laser beam 4a at a vertical angle to the surface of the silicon melt, the laser beam 4a forms a laser spot 4b on the surface of the silicon melt, the laser spot 4b forms a reflection line by specular reflection on the liquid surface (not shown, in general, the reflection line coincides with the emitted laser beam), and the reflection line is received by the laser distance measuring device, so that the distance L between the liquid surface measuring device and the liquid surface can be directly measured.
Preferably, the laser range finder comprises a laser emitting module, wherein the laser emitting module sends a laser beam 4a to the surface of the silicon melt to form a laser spot 4b on the liquid surface; the laser receiving module receives a laser beam 4c obtained by the mirror reflection of the laser spot 4 b; and the measurement data recording and transmitting module is connected with the control device 5 and is used for recording and uploading the measurement data, namely the distance L between the emission point of the liquid level measuring device and the surface 3a of the silicon melt. Therefore, the real-time online monitoring of the liquid port distance is realized by integrating the laser range finder and monitoring and transmitting data in real time.
In some specific embodiments, as shown in fig. 1, the single crystal furnace 100 comprises a sub-chamber 8, the sub-chamber 8 comprises a main body 8a having a hollow structure and an upper end portion (not shown), the main body 8a of the sub-chamber 8 is communicated with the main chamber 1, the upper end portion of the sub-chamber 8 corresponds to a part of the first space 1a, the liquid level measuring device 4 is disposed on the upper end portion of the sub-chamber corresponding to the first space 1a, the installation is simple and convenient by directly installing the liquid level measuring device on the upper end portion of the sub-chamber, and the first space in the furnace can be effectively utilized, and furthermore, the sub-chamber is at a certain distance from the main chamber, the temperature at the top end of the sub-chamber is not so high as not to greatly affect the measurement accuracy of the liquid level measuring device.
In some specific embodiments, as shown in fig. 1, the single crystal furnace 100 comprises a sub-chamber 8, the sub-chamber 8 comprises a main body 8a with a hollow structure, a level adjusting device 9 is arranged at the upper end of the sub-chamber 8, the level adjusting device 9 corresponds to a part of the first space 1a, and the liquid level measuring device 4 is arranged on the level adjusting device corresponding to the first space 1a, and the installation levelness of the liquid level measuring device can be ensured and the measuring accuracy thereof can be improved by directly arranging the liquid level measuring device on the level adjusting device.
In some specific embodiments, the cooling device 10 is disposed around the liquid level measuring device 4, and in order to further improve the measurement accuracy of the liquid level measuring device 4 due to the high temperature in the single crystal furnace, the cooling device 10 is disposed around the liquid level measuring device, so as to effectively ensure the ambient temperature, and thus improve the measurement accuracy.
Next, a single crystal furnace according to a second aspect of the present invention is described with reference to the accompanying drawings, as shown in fig. 1, the single crystal furnace includes a main chamber 1, a crucible 2 for carrying a silicon melt 3 is disposed in the main chamber, the silicon melt 3 includes a silicon melt surface 3a, a crystal rod 7 is disposed above the silicon melt surface 3a, a guide cylinder 6 is disposed above the crucible 2, the guide cylinder 6 is disposed around the crystal rod 7, the silicon melt 3, the guide cylinder 6 and the crystal rod 7 define a first space 1a, a liquid level measuring device 4 is disposed directly above the first space 1a, and the liquid level measuring device 4 measures a first distance L between the liquid level measuring device 4 and the silicon melt surface 3 a; the control device 5 is connected with the liquid level measuring device 4, the control device 5 records the first distance L in real time, and the distance d between the liquid opening and the liquid opening is calculated according to the second preset distance. In the single crystal furnace, the liquid level measuring device is arranged right above the first space limited by the liquid level, the guide cylinder and the crystal bar, the first distance L between the liquid level measuring device and the liquid level is accurately measured, the control device is arranged, the control device can accurately calculate the distance d between the liquid ports according to the first distance L measured by the liquid level measuring device and the preset second distance h, and the online real-time monitoring of the distance between the liquid ports is realized.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the utility model have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the utility model, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. The utility model provides a melt mouth is apart from real time monitoring device in single crystal furnace, single crystal furnace (100) includes main room (1), be provided with crucible (2) that bear silicon melt (3) in main room (1), silicon melt (3) include silicon melt surface (3a), there is crystal bar (7) silicon melt surface (3a) top, crucible (2) top is provided with draft tube (6), draft tube (6) center on crystal bar (7) set up, silicon melt (3) draft tube (6) with first space (1a) is injectd to crystal bar (7), its characterized in that, the melt mouth is apart from real time monitoring device and includes:
a liquid level measuring device (4), wherein the liquid level measuring device (4) is arranged right above the first space (1a), and the liquid level measuring device (4) measures and obtains a first distance (L) between the liquid level measuring device (4) and the surface (3a) of the silicon melt;
and the control device (5) is connected with the liquid level measuring device (4), and the control device (5) records the first distance (L) in real time and calculates the liquid port distance (d) according to the second preset distance.
2. The device for monitoring the liquid gap distance in real time in the single crystal furnace according to claim 1, wherein the second preset distance is a vertical distance between the liquid level measuring device (4) and a lower end surface (6a) of a guide shell close to the surface (3a) of the silicon melt.
3. The device for monitoring the distance between liquid ports in a single crystal furnace according to claim 1, wherein the liquid level measuring device (4) is a laser range finder.
4. The apparatus for real-time monitoring of a liquid gap in a single crystal furnace as claimed in claim 3, wherein said laser range finder emits the laser beam (4a) toward the liquid surface at an emission angle, said emission angle being 90 degrees.
5. A liquid gap real-time monitoring device in a single crystal furnace as claimed in claim 4, wherein said laser range finder comprises:
a laser emission module that sends a laser beam (4a) to the liquid surface, forming a laser spot (4b) on the silicon melt surface (3 a);
the laser receiving module receives a reflection line formed by the mirror reflection of the laser spot (4 b);
and the measurement data recording and transmitting module is connected with the control device (5) and is used for recording and uploading the measurement data.
6. The apparatus for monitoring the distance between liquid ports in a single crystal furnace according to claim 1, wherein the single crystal furnace (100) comprises a sub-chamber (8), the sub-chamber (8) comprises a main body (8a) having a hollow structure and an upper end portion, the main body (8a) of the sub-chamber (8) communicates with the main chamber (1), the upper end portion of the sub-chamber (8) corresponds to a part of the first space (1a), and the liquid level measuring means (4) is provided on the upper end portion of the sub-chamber corresponding to the first space (1 a).
7. The device for monitoring the distance between liquid ports in a single crystal furnace according to claim 1, wherein the single crystal furnace (100) comprises a sub-chamber (8), the sub-chamber (8) is a main body (8a) of a hollow structure, a level adjusting device (9) is arranged at the upper end of the sub-chamber (8), the level adjusting device (9) corresponds to a part of the first space (1a), and the liquid level measuring device (4) is arranged on the level adjusting device (9) corresponding to the first space (1 a).
8. A device for monitoring the distance between liquid ports in real time in a single crystal furnace according to claim 1, wherein a cooling device (10) is provided around said liquid level measuring device (4).
9. A single crystal growing furnace comprising the apparatus for monitoring the distance between the liquid outlets according to any one of claims 1 to 8 in real time.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114808115A (en) * | 2022-04-28 | 2022-07-29 | 晶科能源股份有限公司 | Liquid gap measuring method and liquid gap testing device |
| WO2024051241A1 (en) * | 2022-09-05 | 2024-03-14 | 隆基绿能科技股份有限公司 | Monocrystalline silicon shouldering method |
| WO2024051210A1 (en) * | 2022-09-08 | 2024-03-14 | 隆基绿能科技股份有限公司 | Heat exchanger for mono-crystal furnace and mono-crystal furnace |
-
2021
- 2021-07-05 CN CN202121510041.7U patent/CN216237369U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114808115A (en) * | 2022-04-28 | 2022-07-29 | 晶科能源股份有限公司 | Liquid gap measuring method and liquid gap testing device |
| CN114808115B (en) * | 2022-04-28 | 2023-08-15 | 晶科能源股份有限公司 | Liquid mouth distance measuring method and liquid mouth distance testing device |
| WO2024051241A1 (en) * | 2022-09-05 | 2024-03-14 | 隆基绿能科技股份有限公司 | Monocrystalline silicon shouldering method |
| WO2024051210A1 (en) * | 2022-09-08 | 2024-03-14 | 隆基绿能科技股份有限公司 | Heat exchanger for mono-crystal furnace and mono-crystal furnace |
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Effective date of registration: 20240806 Address after: No. 15, Jinghong Road, Xibei Town, Xishan District, Wuxi City, Jiangsu Province, 214000 Patentee after: Lianke Semiconductor Co.,Ltd. Country or region after: China Address before: 214000 No.209, Zhangjing east section, Xigang Road, Xibei Town, Xishan District, Wuxi City, Jiangsu Province Patentee before: Liancheng keix Technology Co.,Ltd. Country or region before: China |