CN216122197U - Silicon controlled rectifier driving circuit, switching circuit and rectifying circuit - Google Patents
Silicon controlled rectifier driving circuit, switching circuit and rectifying circuit Download PDFInfo
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- CN216122197U CN216122197U CN202122542473.2U CN202122542473U CN216122197U CN 216122197 U CN216122197 U CN 216122197U CN 202122542473 U CN202122542473 U CN 202122542473U CN 216122197 U CN216122197 U CN 216122197U
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Abstract
The utility model discloses a silicon controlled rectifier driving circuit, a switching circuit and a rectifying circuit, which belong to the technical field of silicon controlled rectifier driving, wherein the driving circuit is connected with a control circuit and a silicon controlled rectifier T, and comprises a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on the control side and a photosensitive bidirectional triode thyristor arranged on the driving side; the anode of the light emitting diode is connected with the output end of the control circuit, and the cathode of the light emitting diode is connected with the grounding end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the thyristor T through a diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the thyristor T; the purpose of controlling the conduction or the cut-off of the controllable silicon is realized. The utility model solves the problem of complex design of the silicon controlled drive circuit in the prior art, realizes no need of providing a drive power supply separately, and has the effects of simple circuit, small volume and low cost.
Description
Technical Field
The utility model relates to the technical field of silicon controlled rectifier driving, in particular to a silicon controlled rectifier driving circuit, a switching circuit and a rectifying circuit.
Background
Silicon Controlled Rectifiers (SCR), also called thyristors, have the characteristics of small volume, high efficiency, long service life, and can be used in a low-voltage low-power driving circuit to control a high-voltage high-power device scene, and thus are widely applied to the field of industrial speed-regulating transmission and household appliance consumption.
At present, the drive circuit of silicon controlled rectifier generally needs to provide drive power supply alone, and when the multichannel silicon controlled rectifier was driven to needs, correspondingly, the multichannel drive power supply that needs to satisfy insulating requirement each other caused drive circuit design complicacy to lead to the circuit reliability to reduce, a plurality of drive power supply and a plurality of drive circuit still can lead to device volume increase, cost to increase.
SUMMERY OF THE UTILITY MODEL
The main purposes of the utility model are as follows: the utility model provides a silicon controlled rectifier drive circuit, switch circuit and rectifier circuit, aim at solving the technical problem that silicon controlled rectifier drive circuit has the design complicacy among the prior art.
In order to achieve the purpose, the utility model adopts the following technical scheme:
in a first aspect, the present invention provides a thyristor driving circuit, where the driving circuit is respectively connected to a control circuit and a thyristor T, and the driving circuit includes:
a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side;
the anode of the light emitting diode is connected with the output end of the control circuit, and the cathode of the light emitting diode is connected with the grounding end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T;
the light-emitting diode is conducted and emits light when a control signal SCR _ C output by the control circuit is an effective level signal, the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, and the controllable silicon T is driven to conduct in a triggering mode, so that power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
Optionally, in the above silicon controlled rectifier driving circuit, the driving circuit further includes:
a drive resistor R3;
the output end of the photosensitive bidirectional controllable silicon is respectively connected with the gate pole G and the cathode K of the controllable silicon T, and the output end of the photosensitive bidirectional controllable silicon comprises:
the output end of the photosensitive bidirectional thyristor is connected with one end of the driving resistor R3, and the other end of the driving resistor R3 is respectively connected with the gate G and the cathode K of the thyristor T.
Optionally, in the above silicon controlled rectifier driving circuit, the driving circuit further includes:
a resistor R4 and a capacitor C1;
the output end of the photosensitive bidirectional controllable silicon is respectively connected with the gate pole G and the cathode K of the controllable silicon T, and the output end of the photosensitive bidirectional controllable silicon comprises:
the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G of the thyristor T, one end of the resistor R4 and one end of the capacitor C1, and the other end of the resistor R4 and the other end of the capacitor C1 are both connected with the cathode K of the thyristor T.
Optionally, in the above silicon controlled rectifier driving circuit, the driving circuit further includes:
a current limiting resistor R1 and a resistor R2;
the positive pole of the light emitting diode is connected with the control circuit and comprises:
the anode of the light emitting diode is respectively connected with one end of the current limiting resistor R1 and one end of the resistor R2, the other end of the current limiting resistor R1 is connected with the control circuit, and the other end of the resistor R2 is connected with the cathode of the light emitting diode.
Alternatively, in the above silicon controlled rectifier driving circuit,
the photosensitive bidirectional controllable silicon adopts a high voltage-resistant photosensitive bidirectional controllable silicon, and the voltage-resistant value of the photosensitive bidirectional controllable silicon is consistent with the forward voltage-resistant value of the controllable silicon T;
the diode D1 adopts a fast recovery diode with high reverse voltage resistance and low conduction voltage drop, and the reverse voltage resistance value of the diode D1 is consistent with that of the controllable silicon T.
In a second aspect, the present invention further provides a thyristor driving circuit, where the driving circuit is respectively connected to a control circuit and a thyristor T, and the driving circuit includes:
a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side;
the anode of the light-emitting diode is connected with the power supply end of the control circuit, and the cathode of the light-emitting diode is connected with the output end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T;
the light-emitting diode is conducted to emit light when a control signal SCR _ C output by the control circuit is an invalid level signal, and the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, so that driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, the controllable silicon T is driven to conduct in a triggering mode, and power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
In a third aspect, the present invention further provides a high-side buffer switch circuit, where an input terminal of the switch circuit is connected to a three-phase bridge rectifier circuit, and output terminals of the switch circuit are respectively connected to a bus capacitor C2, and the switch circuit includes:
the thyristor driving circuit, the thyristor T1, the diode D2 and the resistor R5 are arranged;
the thyristor driving circuit is connected with the thyristor T1, the anode of the thyristor T1 is respectively connected with the three-phase bridge rectifier circuit, the cathode of the diode D2 and one end of the resistor R5, and the cathode of the thyristor T1 is respectively connected with the anode of the diode D2, the other end of the resistor R5 and the bus capacitor C2.
In a fourth aspect, the present invention further provides a low-side buffer switch circuit, where an input terminal of the switch circuit is connected to a three-phase bridge rectifier circuit, and output terminals of the switch circuit are respectively connected to a bus capacitor C3, the switch circuit includes:
the thyristor driving circuit, the thyristor T2, the diode D3 and the resistor R6 are arranged;
the thyristor driving circuit is connected with the thyristor T2, the cathode of the thyristor T2 is respectively connected with the three-phase bridge rectifier circuit, the anode of the diode D3 and one end of the resistor R6, and the anode of the thyristor T2 is respectively connected with the cathode of the diode D3, the other end of the resistor R6 and the bus capacitor C3.
In a fifth aspect, the present invention further provides a three-phase bridge type half-controlled rectifier circuit, an input end of the rectifier circuit is connected to a three-phase ac power grid, and an output end of the rectifier circuit is connected to a bus capacitor C4, the rectifier circuit including:
a three-phase upper bridge and a three-phase lower bridge;
the three-phase upper bridge comprises three silicon controlled driving circuits and three silicon controlled T which are mutually connected;
the three-phase lower bridge comprises three diodes.
In a sixth aspect, the present invention further provides a three-phase bridge type fully-controlled rectifier circuit, where an input end of the rectifier circuit is connected to a three-phase ac power grid, and an output end of the rectifier circuit is connected to a bus capacitor C5, the rectifier circuit includes:
a three-phase upper bridge and a three-phase lower bridge;
the three-phase upper bridge comprises three silicon controlled driving circuits and three silicon controlled T which are mutually connected;
the three-phase lower bridge comprises three lines of the thyristor driving circuit and the thyristor T which are mutually connected.
One or more technical solutions provided by the present invention may have the following advantages or at least achieve the following technical effects:
according to the silicon controlled rectifier driving circuit, the switching circuit and the rectifying circuit, the driving optocoupler U1 and the diode D1 which are composed of the light emitting diode and the photosensitive bidirectional silicon controlled rectifier are adopted, the anode of the light emitting diode is connected with the output end of the control circuit, the cathode of the light emitting diode is connected with the grounding end of the control circuit, and the light emitting diode is conducted to emit light when the control signal SCR _ C output by the control circuit is an effective level signal; the input end of the photosensitive bidirectional controllable silicon is connected with the anode A of the controllable silicon T through the diode D1, the output end of the photosensitive bidirectional controllable silicon is connected with the gate G and the cathode K of the controllable silicon T, when the light emitting diode emits light, the photosensitive bidirectional controllable silicon is triggered and conducted in a photosensitive mode, driving current is injected into the gate G of the controllable silicon T from the anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, the controllable silicon T is driven to be triggered and conducted, power current flows to the cathode K of the controllable silicon T from the anode A of the controllable silicon T, and the purpose of controlling the conduction or the cut-off of the controllable silicon is achieved. The silicon controlled drive circuit does not need to provide a drive power supply independently, has the characteristics of simple circuit, small volume and low cost, is applicable to both positive logic drive and negative logic drive, has strong applicability, and also has strong reproducibility and expansibility. The switching circuit and the rectifying circuit based on the driving circuit have the advantage of simple driving logic.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the structures shown in the drawings without inventive labor.
FIG. 1 is a schematic circuit diagram of a thyristor driver circuit according to a first embodiment of the present invention;
FIG. 2 is an equivalent schematic block diagram of the thyristor driver circuit of FIG. 1;
FIG. 3 is a schematic circuit diagram of a thyristor driver circuit according to a second embodiment of the utility model;
FIG. 4 is a schematic diagram of the connection of the high side buffer switch circuit according to the present invention;
FIG. 5 is a schematic diagram of the low-side snubber switch circuit according to the present invention;
FIG. 6 is a schematic connection diagram of a three-phase bridge type half-controlled rectifier circuit according to the present invention;
FIG. 7 is a schematic connection diagram of a three-phase bridge fully-controlled rectifier circuit according to the present invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, in the present invention, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element. In the present invention, unless expressly stated or limited otherwise, the terms "connected," "secured," and the like are to be construed broadly, and for example, "connected" may be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium; either internally or in interactive relation. In addition, in the present invention, if there is a description referring to "first", "second", etc., the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.
The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations. In addition, the technical solutions of the respective embodiments may be combined with each other, but must be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination of technical solutions should be considered to be absent and not be within the protection scope of the present invention.
The silicon controlled drive circuit can be divided into a strong current hardware direct trigger type, a strong current hardware indirect trigger type and a weak current software trigger type according to the silicon controlled trigger signal source, and can be divided into a high voltage MOSFET (Metal Oxide Semiconductor Field Effect Transistor) drive type, a transformer pulse drive type, a constant voltage drive type and a constant current drive type according to the drive circuit form.
The existing silicon controlled rectifier driving circuit needs to provide a driving power supply of 6V-15V independently, when a plurality of paths of silicon controlled rectifiers need to be driven, correspondingly, a plurality of paths of driving power supplies which mutually meet the insulation requirement are needed, so that the design of the driving circuit is complicated, and the reliability of the circuit is reduced; the use of a plurality of driving power supplies and a plurality of driving circuits also leads to an increase in the size and cost of the circuit device.
Moreover, some existing thyristor driving circuits also have the problems of high cost and large size, for example, a high-voltage MOSFET driving type thyristor driving circuit needs to use an expensive MOSFET, and a transformer with a large size needs to be used for a transformer pulse driving type thyristor driving circuit, so that the thyristor driving circuit is not suitable for being applied to products with high power density and high cost performance, and accordingly the applicability is poor.
In view of the technical problem of complicated design of the silicon controlled drive circuit in the prior art, the utility model provides the silicon controlled drive circuit, and the general idea is as follows:
the drive circuit is connected with control circuit and silicon controlled rectifier T respectively, drive circuit includes: a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side; the anode of the light emitting diode is connected with the output end of the control circuit, and the cathode of the light emitting diode is connected with the grounding end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T; the light-emitting diode is conducted and emits light when a control signal SCR _ C output by the control circuit is an effective level signal, the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, and the controllable silicon T is driven to conduct in a triggering mode, so that power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
By the technical scheme, the purpose of controlling the on or off of the silicon controlled rectifier is achieved; the silicon controlled rectifier driving circuit does not need to provide a driving power supply independently, has the characteristics of simple circuit, small size and low cost, can be applied to both positive logic driving and negative logic driving, has strong applicability, and also has strong reproducibility and expansibility.
Example one
Referring to fig. 1, fig. 1 is a schematic circuit diagram of a thyristor driving circuit according to a first embodiment of the utility model; the embodiment provides a silicon controlled rectifier driving circuit, and particularly provides an isolated silicon controlled rectifier driving circuit without a driving power supply.
The drive circuit is connected with control circuit and silicon controlled rectifier T respectively, drive circuit includes:
a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side;
the anode of the light emitting diode is connected with the output end of the control circuit, and the cathode of the light emitting diode is connected with the ground end GND of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T;
the light-emitting diode is conducted and emits light when a control signal SCR _ C output by the control circuit is an effective level signal, the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, and the controllable silicon T is driven to conduct in a triggering mode, so that power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
Specifically, the thyristor T has 3 electrodes, an anode A, a cathode K and a gate G, wherein the anode A and the cathode K are power electrodes of the thyristor, the gate G is a control electrode of the thyristor, and when the thyristor A-K has a positive voltage difference and an external driving circuit provides a triggerable current for the gate G of the thyristor and maintains a certain voltage, the thyristor can be triggered and conducted; power current flows from the thyristor anode a to the cathode K.
In this embodiment, the control side of the driving optocoupler U1 is connected with the output end of the control circuit, receives the control signal SCR _ C, the input end of the driving side of the driving optocoupler U1 is connected with the anode a of the thyristor T through the diode D1, receives the driving signal SCR _ a, the output end of the driving side of the driving optocoupler U1 is connected with the gate G and the cathode K of the thyristor T, and outputs the trigger signals SCR _ G and SCR _ K.
Specifically, the light emitting diode may be a light emitting diode made of gallium arsenide (GaAs) material. When the current flows through the light emitting diode in the driving optocoupler U1, the photosensitive bidirectional thyristor can trigger bidirectional conduction by random phase or zero-crossing, and at the moment, the driving optocoupler U1 is approximately equivalent to a closed switch.
Further, the driving circuit further includes:
a drive resistor R3;
the output end of the photosensitive bidirectional controllable silicon is respectively connected with the gate pole G and the cathode K of the controllable silicon T, and the output end of the photosensitive bidirectional controllable silicon comprises:
the output end of the photosensitive bidirectional thyristor is connected with one end of the driving resistor R3, and the other end of the driving resistor R3 is respectively connected with the gate G and the cathode K of the thyristor T.
Further, in order to speed up the driving circuit, the driving resistor R3 may be replaced with a wire or its resistance may be set to 0 Ω according to circumstances without damaging the thyristor T. The driving resistor R3 is provided in this embodiment to limit current.
Further, the driving circuit further includes:
a resistor R4 and a capacitor C1;
the output end of the photosensitive bidirectional controllable silicon is respectively connected with the gate pole G and the cathode K of the controllable silicon T, and the output end of the photosensitive bidirectional controllable silicon comprises:
the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G of the thyristor T, one end of the resistor R4 and one end of the capacitor C1, and the other end of the resistor R4 and the other end of the capacitor C1 are both connected with the cathode K of the thyristor T.
The resistor R4 and the capacitor C1 can reduce the risk of false triggering of the thyristor T.
Further, the driving circuit further includes:
a current limiting resistor R1 and a resistor R2;
the positive pole of the light emitting diode is connected with the control circuit and comprises:
the anode of the light emitting diode is respectively connected with one end of the current limiting resistor R1 and one end of the resistor R2, the other end of the current limiting resistor R1 is connected with the control circuit, and the other end of the resistor R2 is connected with the cathode of the light emitting diode.
In this embodiment, the current limiting resistor R1 limits the current of the light emitting diode, and in this embodiment, the resistance of the current limiting resistor R1 is set to a value standard that the current of the light emitting diode is less than 10mA when the control signal SCR _ C is at an active level.
The driving circuit of this embodiment is a positive logic driving circuit, and the resistor R2 is a pull-down resistor for the control signal SCR _ C. The resistor R2 can avoid the control signal SCR _ C from being in an uncertain state, meanwhile, the conduction current threshold of the light emitting diode at the control side of the driving optocoupler U1 is increased, the anti-interference performance of the control signal SCR _ C is improved, and the resistance value of the resistor R2 can be 2k omega-5.1 k omega in the embodiment.
The working principle of the embodiment is as follows:
when the control signal SCR _ C is 0V, the control signal SCR _ C belongs to an invalid level signal, a light emitting diode and a photosensitive bidirectional thyristor of the driving optocoupler U1 are both cut off, a gate-level G trigger circuit of the thyristor T is cut off, and the thyristor T is cut off;
when the control signal SCR _ C is 3.3V or 5V and belongs to an effective level signal, the control signal SCR _ C drives a light-emitting diode to flow through conduction current through a current-limiting resistor R1, the conduction current is less than 10mA, the light-emitting diode emits light, photosensitive bidirectional thyristor is triggered to conduct bidirectionally, when A-K of the controllable silicon T bears positive voltage greater than 1V, the driving current flows into a driving circuit from an anode A of the controllable silicon T and serves as an input driving signal SCR _ A, the driving signal SCR _ A passes through a diode D1, the photosensitive bidirectional thyristor on the driving side of a driving optocoupler U1 which is conducted bidirectionally and a driving resistor R3 and serves as a triggering signal SCR _ G to be output, the triggering signal SCR _ G is injected into a gate G of the controllable silicon T to drive the controllable silicon T to conduct in a triggering mode, and power current can flow from the anode A of the controllable silicon T to a cathode K.
Furthermore, the photosensitive bidirectional triode thyristor adopts a high voltage-resistant photosensitive bidirectional triode thyristor, and the voltage-resistant value of the photosensitive bidirectional triode thyristor is consistent with the forward voltage-resistant value of the thyristor T;
the diode D1 adopts a fast recovery diode with high reverse voltage resistance and low conduction voltage drop, and the reverse voltage resistance value of the diode D1 is consistent with that of the controllable silicon T.
Specifically, when the control signal SCR _ C is an invalid level signal, the thyristor T is turned off, and at this time, the photosensitive triac receives a forward high voltage as same as a-K of the thyristor T, and therefore, the photosensitive triac needs to select a high voltage-resistant type, and in this embodiment, a high voltage-resistant type photosensitive triac having a forward voltage-resistant value that is the same as that of the thyristor T is selected.
Meanwhile, in order to prevent false triggering, a photosensitive bidirectional triode thyristor with high voltage rising rate (dv/dt) can be adopted, for example, the photosensitive bidirectional triode thyristor with dv/dt being more than 1000V/us is selected.
When the control signal SCR _ C is an effective level signal, the photosensitive bidirectional triode thyristor is conducted in two directions, when A-K of the triode thyristor T bears reverse high voltage, the diode D1 is cut off in the reverse direction, no driving current flows through the driving resistor R3, the driving loop of the gate stage G of the triode thyristor T is completely cut off, the triode thyristor T is reliably cut off, at the moment, the diode D1 bears the same reverse high voltage as A-K of the triode thyristor T, and therefore the reverse withstand voltage value of the diode D1 can be selected to be the same as that of the triode thyristor T.
Meanwhile, when a-K of the thyristor T is subjected to positive voltage, in order to reduce the delay of the driving circuit, the diode D1 may be a low-conduction-voltage-drop fast recovery diode, and therefore, a fast recovery diode with high reverse withstand voltage and low conduction voltage drop is selected in this embodiment.
Through the type selection of the photosensitive bidirectional triode thyristor and the diode D1, a proper voltage withstanding value is set according to actual conditions, so that the driving circuit can be expanded to be suitable for the power grid grades of 220V alternating current, 380-480V alternating current and 690V alternating current. Parameters such as isolation voltage, creepage distance, electric clearance, safety regulation certification and the like of a control side and a driving side of the driving optocoupler U1 can be set according to actual conditions, so that the driving circuit can meet corresponding functional insulation requirements and safety insulation requirements when being suitable for different power grid grades.
In the silicon controlled rectifier driving circuit of the embodiment, the driving optocoupler U1 and the diode D1 which are composed of the light emitting diode and the photosensitive bidirectional triode thyristor are adopted, the anode of the light emitting diode is connected with the output end of the control circuit, and the cathode of the light emitting diode is connected with the grounding end of the control circuit, so that the light emitting diode is conducted to emit light when the control signal SCR _ C output by the control circuit is an effective level signal; the input end of the photosensitive bidirectional controllable silicon is connected with the anode A of the controllable silicon T through the diode D1, the output end of the photosensitive bidirectional controllable silicon is connected with the gate G and the cathode K of the controllable silicon T, when the light emitting diode emits light, the photosensitive bidirectional controllable silicon is triggered and conducted in a photosensitive mode, driving current is injected into the gate G of the controllable silicon T from the anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, the controllable silicon T is driven to be triggered and conducted, power current flows to the cathode K of the controllable silicon T from the anode A of the controllable silicon T, and the purpose of controlling the conduction or the cut-off of the controllable silicon is achieved. The silicon controlled drive circuit does not need to provide a drive power supply independently, and has the characteristics of simple circuit, small volume, low cost, strong applicability, strong reproducibility and expansibility.
The silicon controlled rectifier driving circuit of the embodiment can be applied to any silicon controlled rectifier driving scene, and particularly can be applied to a driving circuit which adopts a silicon controlled rectifier as alternating current and direct current rectification and a driving circuit which adopts a silicon controlled rectifier as a bus buffer switch in a frequency converter, so that the silicon controlled rectifier driving circuit can be applied to the consumption fields of alternating current and direct current speed regulation, power regulation, follow-up systems, household appliances and the like in the industrial field.
Example two
Fig. 3 is a schematic circuit diagram of a second embodiment of the thyristor driver circuit according to the utility model; the embodiment provides a silicon controlled rectifier driving circuit, and particularly provides an isolated silicon controlled rectifier driving circuit without a driving power supply.
The drive circuit is connected with control circuit and silicon controlled rectifier T respectively, drive circuit includes:
a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side;
the anode of the light-emitting diode is connected with a power supply end VCC of the control circuit, and the cathode of the light-emitting diode is connected with the output end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T;
the light-emitting diode is conducted to emit light when a control signal SCR _ C output by the control circuit is an invalid level signal, and the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, so that driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, the controllable silicon T is driven to conduct in a triggering mode, and power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
Further, the driving circuit may further include:
a driving resistor R3, a resistor R4, a capacitor C1, a current limiting resistor R1 and a resistor R2.
The driving circuit of this embodiment is a negative logic driving circuit, and the resistor R2 is a pull-up resistor for the control signal SCR _ C.
In this embodiment, when the control signal SCR _ C is 0V, which is an active level signal, the thyristor T is driven to trigger and conduct; when the control signal SCR _ C is 3.3V or 5V of VCC, the control signal SCR _ C belongs to an invalid level signal, and the controllable silicon T is cut off.
It should be noted that, for further details of the specific implementation of each device in this embodiment, reference may be made to the description of the specific implementation of the first embodiment, and for simplicity of the description, repeated descriptions are not repeated here.
The drive circuit of this embodiment, though connected control circuit's power end VCC, nevertheless because power end VCC is control circuit's inherent power, and new solitary drive power supply is not introduced to, so, the drive circuit of this embodiment also need not provide drive power supply alone, still has characteristics that the circuit is succinct, small, with low costs, and the suitability is stronger, still has stronger reproducibility and expansibility.
EXAMPLE III
Referring to fig. 4, fig. 4 is a schematic circuit diagram of the high side buffer switch circuit of the present invention; on the basis of the first embodiment, the present embodiment provides a high-side snubber switch circuit, and in particular, provides an uncontrolled-rectification high-side snubber switch circuit applied to an industrial frequency converter. It should be noted that, for the sake of simplicity of the drawings, in this embodiment, the thyristor driving circuit shown in fig. 1 provided in the first embodiment is replaced by the equivalent schematic block diagram shown in fig. 2, and the high-side snubber switch circuit in this embodiment is described in detail below with reference to the equivalent schematic block diagram of fig. 2 and the circuit schematic diagram of fig. 4.
The input and the three-phase bridge rectifier circuit of switch circuit are connected, and the output is connected with bus capacitor C2, switch circuit includes:
the thyristor driving circuit, the thyristor T1, the diode D2 and the resistor R5 according to the first embodiment;
the thyristor driving circuit is connected with the thyristor T1, and the specific connection mode refers to the description of the specific implementation mode in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the thyristor T1 is respectively connected with the three-phase bridge rectifier circuit, the cathode of the diode D2 and one end of the resistor R5; the cathode of the thyristor T1 is respectively connected with the anode of the diode D2, the other end of the resistor R5 and the bus capacitor C2.
Specifically, the anode of the thyristor T1 is connected to the first output end of the three-phase bridge rectifier circuit, the cathode of the diode D2, and one end of the resistor R5, the cathode of the thyristor T1 is connected to the anode of the diode D2, the other end of the resistor R5, and the anode of the bus capacitor C2, and the cathode of the bus capacitor C2 is connected to the second output end of the three-phase bridge rectifier circuit, so as to output the bus voltage Vdc.
Specifically, the resistor R5 is a snubber resistor, and the combination of the thyristor T1 and the diode D2 may be equivalent to a contactor switch. The control logic of the switching circuit is as follows:
when the three-phase alternating-current power grid RST is electrified, the control signal SCR _ C output by the output end of the control circuit is an invalid level signal, namely the control signal SCR _ C received by the silicon controlled driving circuit is an invalid level signal, the silicon controlled driving circuit does not output, the silicon controlled rectifier T1 is turned off, and the three-phase alternating-current power grid RST charges the bus capacitor C2 through the buffer resistor R5 to realize normal electrification buffering;
when the voltage of the bus capacitor C2 rises and does not change for a period of time, the control signal SCR _ C received by the thyristor drive circuit is an effective level signal and is kept all the time, the thyristor drive circuit drives the thyristor T1 to be conducted, when the A-K of the thyristor T1 has a forward voltage difference larger than 1V, high-end current flows from the anode of the thyristor T1 to the cathode, when the A-K of the thyristor T1 has a reverse voltage difference larger than 1V, the high-end current flows from the anode of the diode D2 to the cathode, and at the moment, the combination of the thyristor T1 and the diode D2 is equivalent to a contactor switch.
In the high-side buffer switch circuit of this embodiment, the specific structure of the thyristor driving circuit refers to the first embodiment, and since this embodiment adopts all the technical solutions of the first embodiment, all the beneficial effects brought by the technical solutions of the first embodiment are at least achieved, and are not described in detail herein. The high-side buffer switch circuit of the embodiment also has the advantage of simple driving logic.
Example four
Referring to fig. 5, fig. 5 is a schematic circuit diagram of the low-side buffer switch circuit of the present invention; on the basis of the first embodiment, the present embodiment provides a low-side snubber switch circuit, and in particular, provides an uncontrolled rectifying low-side snubber switch circuit applied to an industrial frequency converter. It should be noted that, for simplicity of the drawings, in this embodiment, the thyristor driving circuit shown in fig. 1 provided in the first embodiment is replaced with an equivalent schematic block diagram shown in fig. 2, and the low-side snubber switch circuit of this embodiment is described in detail below with reference to the equivalent schematic block diagram of fig. 2 and the circuit schematic diagram of fig. 5.
The input and the three-phase bridge rectifier circuit of switch circuit are connected, and the output is connected with bus capacitor C3, switch circuit includes:
the thyristor driving circuit, the thyristor T2, the diode D3 and the resistor R6 according to the first embodiment;
the thyristor driving circuit is connected with the thyristor T2, and the specific connection mode refers to the description of the specific implementation mode in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the cathode of the controllable silicon T2 is respectively connected with the three-phase bridge rectifier circuit, the anode of the diode D3 and one end of the resistor R6, and the anode of the controllable silicon T2 is respectively connected with the cathode of the diode D3, the other end of the resistor R6 and the bus capacitor C3.
Specifically, the cathode of the thyristor T2 is connected to the second output end of the three-phase bridge rectifier circuit, the anode of the diode D3, and one end of the resistor R6, the anode of the thyristor T2 is connected to the cathode of the diode D3, the other end of the resistor R6, and the cathode of the bus capacitor C3, and the anode of the bus capacitor C3 is connected to the first output end of the three-phase bridge rectifier circuit, so as to output the bus voltage Vdc.
Specifically, the resistor R6 is a snubber resistor, and the combination of the thyristor T2 and the diode D3 may be equivalent to a contactor switch. The control logic of the switching circuit is as follows:
when the three-phase alternating-current power grid RST is electrified, the control signal SCR _ C output by the output end of the control circuit is an invalid level signal, namely the control signal SCR _ C received by the silicon controlled driving circuit is an invalid level signal, the silicon controlled driving circuit does not output, the silicon controlled rectifier T2 is turned off, and the three-phase alternating-current power grid RST charges the bus capacitor C3 through the buffer resistor R6 to realize normal electrification buffering;
when the voltage of the bus capacitor C3 rises and does not change for a while, the control signal SCR _ C received by the SCR drive circuit is an active level signal and is kept, the SCR drive circuit drives the SCR T2 to be conducted, when the A-K of the SCR T2 has a forward voltage difference larger than 1V, the low-end current flows from the anode to the cathode of the SCR T2, when the A-K of the SCR T2 has a reverse voltage difference larger than 1V, the low-end current flows from the anode to the cathode of the diode D3, and at the moment, the combination of the SCR T2 and the diode D3 is equivalent to a contactor switch.
In the low-side buffer switch circuit of this embodiment, the specific structure of the thyristor driving circuit refers to the first embodiment, and since this embodiment adopts all the technical solutions of the first embodiment, all the beneficial effects brought by the technical solutions of the first embodiment are at least achieved, and are not described in detail herein. The low-side buffer switch circuit of the embodiment also has the advantage of simple driving logic.
EXAMPLE five
Referring to fig. 6, fig. 6 is a schematic circuit diagram of a three-phase bridge type half-controlled rectifier circuit according to the present invention; on the basis of the first embodiment, the present embodiment provides a three-phase bridge type half-controlled rectifier circuit, and specifically provides a three-phase bridge type half-controlled rectifier circuit with controllable three-phase upper bridge. It should be noted that, for simplicity of the drawings, in this embodiment, the thyristor driving circuit shown in fig. 1 provided in the first embodiment is replaced by an equivalent schematic block diagram shown in fig. 2, and the three-phase bridge type half-controlled rectifier circuit of this embodiment is described in detail below with reference to the equivalent schematic block diagram of fig. 2 and the circuit schematic diagram of fig. 6.
The input end of the rectification circuit is connected with a three-phase alternating current network RST, the output end of the rectification circuit is connected with a bus capacitor C4, and the rectification circuit comprises:
a three-phase upper bridge and a three-phase lower bridge;
the three-phase upper bridge comprises three circuits of the thyristor driving circuit and the thyristor T which are mutually connected as in the first embodiment;
the three-phase lower bridge comprises three diodes.
In this embodiment, the three-phase upper bridge is an R-phase upper bridge, an S-phase upper bridge, and a T-phase upper bridge, respectively; the three-phase lower bridge is respectively an R-phase lower bridge, an S-phase lower bridge and a T-phase lower bridge; wherein the content of the first and second substances,
the R-phase upper bridge comprises a thyristor driving circuit P11 and a thyristor T11 which are connected with each other, and the R-phase lower bridge comprises a diode D11;
the specific connection mode of the thyristor driving circuit P11 and the thyristor T11 refers to the description of the specific implementation mode in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the controllable silicon T11 is respectively connected with the R-phase input end in a three-phase alternating current network RST and the cathode of a diode D11, the cathode of the controllable silicon T11 is connected with the anode of a bus capacitor C4, and the anode of the diode D11 is connected with the cathode of a bus capacitor C4;
the S-phase upper bridge comprises a thyristor driving circuit P12 and a thyristor T12 which are mutually connected, and the S-phase lower bridge comprises a diode D12;
the specific connection mode of the thyristor driving circuit P12 and the thyristor T12 refers to the description of the specific implementation mode in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the controllable silicon T12 is respectively connected with the S-phase input end in a three-phase alternating current network RST and the cathode of a diode D12, the cathode of the controllable silicon T12 is connected with the anode of a bus capacitor C4, and the anode of the diode D12 is connected with the cathode of a bus capacitor C4;
the T-phase upper bridge comprises a thyristor driving circuit P13 and a thyristor T13 which are mutually connected, and the T-phase lower bridge comprises a diode D13;
the specific connection mode of the thyristor driving circuit P13 and the thyristor T13 refers to the description of the specific implementation mode in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the thyristor T13 is respectively connected with the T-phase input end in the three-phase alternating current network RST and the cathode of the diode D13, the cathode of the thyristor T13 is connected with the anode of the bus capacitor C4, and the anode of the diode D13 is connected with the cathode of the bus capacitor C4.
Specifically, thyristors T11, T12, and T13 driven by a single thyristor driving circuit may be equivalent to a single-phase switch. The control logic of the rectifying circuit of the embodiment is as follows:
before the rectification is soft, the voltage Vdc of the direct current bus is 0V,
in the soft start process, a control circuit firstly detects the phase sequence of a locked three-phase alternating current power grid RST, and then outputs control signals SCR _ C _ RH, SCR _ C _ SH and SCR _ C _ TH which are effective level signals according to the phase of the voltage of a phase-locked R-S, S-T, T-R passing through 0 point; the thyristor driving circuit P11, the thyristor driving circuit P12 and the thyristor driving circuit P13 are kept after receiving the effective level signal, and the keeping time is gradually increased along with the period of the power grid. Taking SCR _ C _ RH as an example, the control circuit outputs a control signal SCR _ C _ RH when the phase-locked R-S line voltage passes 0 point for the first time, and the control signal SCR _ C _ RH is an effective level signal and lasts for an angle
At this time, the thyristor T11 of the upper bridge of the R phase is conducted
In the degree, the input end of the R phase can charge the bus capacitor C4, and the bus voltage Vdc rises by a small step; wherein the content of the first and second substances,
then, every R-S power grid period, the control circuit outputs a control signal SCR _ C _ RH which is an effective level signal, and the angle of the duration time of the effective level signal is increased every time
The bus voltage Vdc tends to stabilize until it increases to a maximum of 180 degrees.
After the soft start is finished, when the bus voltage Vdc rises to last for a period of time and does not change, the control circuit outputs control signals SCR _ C _ RH, SCR _ C _ SH and SCR _ C _ TH which are all effective level signals and are kept effective all the time; when the A-K of the controllable silicon has a forward voltage difference larger than 1V, the controllable silicon is conducted and is equivalent to a single-phase switch; taking SCR _ C _ RH as an example, when a-K of the thyristor T11 has a forward voltage difference greater than 1V, the thyristor T11 is turned on, and at this time, the thyristor T11 is equivalent to a single-phase switch.
In the three-phase bridge type half-controlled rectifier circuit of this embodiment, the specific structure of the silicon controlled drive circuit refers to the first embodiment, and since this embodiment adopts all the technical solutions of the first embodiment, all the beneficial effects brought by the technical solution of the first embodiment are at least achieved, and are not described in detail herein. The three-phase bridge type semi-controlled rectifying circuit also has the advantage of simple driving logic.
EXAMPLE six
Referring to fig. 7, fig. 7 is a schematic circuit diagram of a three-phase bridge type fully-controlled rectifier circuit according to the present invention; on the basis of the first embodiment, the present embodiment provides a three-phase bridge type fully-controlled rectifier circuit, and specifically provides a three-phase bridge type fully-controlled rectifier circuit in which both a three-phase upper bridge and a three-phase lower bridge are controllable. It should be noted that, for simplicity of the drawings, in this embodiment, the thyristor driving circuit shown in fig. 1 provided in the first embodiment is replaced by an equivalent schematic block diagram shown in fig. 2, and the three-phase bridge fully-controlled rectifier circuit of this embodiment is described in detail below with reference to the equivalent schematic block diagram of fig. 2 and the circuit schematic diagram of fig. 7.
The input end of the rectification circuit is connected with a three-phase alternating current network RST, the output end of the rectification circuit is connected with a bus capacitor C5, and the rectification circuit comprises:
a three-phase upper bridge and a three-phase lower bridge;
the three-phase upper bridge comprises three circuits of the thyristor driving circuit and the thyristor T which are mutually connected as in the first embodiment;
the three-phase lower bridge comprises three circuits of the thyristor driving circuit and the thyristor T which are mutually connected according to the embodiment one.
In this embodiment, the three-phase upper bridge is an R-phase upper bridge, an S-phase upper bridge, and a T-phase upper bridge, respectively; the three-phase lower bridge is respectively an R-phase lower bridge, an S-phase lower bridge and a T-phase lower bridge; wherein the content of the first and second substances,
the R-phase upper bridge comprises a thyristor driving circuit P21 and a thyristor T21 which are mutually connected, and the R-phase lower bridge comprises a thyristor driving circuit P24 and a thyristor T24 which are mutually connected; the specific connection mode of the thyristor driving circuit and the thyristor is described in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the controlled silicon T21 is respectively connected with the R-phase input end in a three-phase alternating current network RST and the cathode of a controlled silicon T24, the cathode of the controlled silicon T21 is connected with the anode of a bus capacitor C5, and the anode of the controlled silicon T24 is connected with the cathode of a bus capacitor C5;
the S-phase upper bridge comprises a thyristor driving circuit P22 and a thyristor T22 which are mutually connected, and the S-phase lower bridge comprises a thyristor driving circuit P25 and a thyristor T25 which are mutually connected; the specific connection mode of the thyristor driving circuit and the thyristor is described in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the controlled silicon T22 is respectively connected with the S-phase input end in a three-phase alternating current network RST and the cathode of a controlled silicon T25, the cathode of the controlled silicon T22 is connected with the anode of a bus capacitor C5, and the anode of the controlled silicon T25 is connected with the cathode of a bus capacitor C5;
the T-phase upper bridge comprises a thyristor driving circuit P23 and a thyristor T23 which are mutually connected, and the T-phase lower bridge comprises a thyristor driving circuit P26 and a thyristor T26 which are mutually connected; the specific connection mode of the thyristor driving circuit and the thyristor is described in the first embodiment, and for the simplicity of the description, repeated description is omitted here;
the anode of the controlled silicon T23 is respectively connected with the T-phase input end in a three-phase alternating current network RST and the cathode of a controlled silicon T26, the cathode of the controlled silicon T23 is connected with the anode of a bus capacitor C5, and the anode of the controlled silicon T26 is connected with the cathode of a bus capacitor C5;
specifically, the control logic of the rectifier circuit of this embodiment is:
in the soft start process, a control circuit firstly detects the phase sequence of a locked three-phase alternating current power grid RST, and then outputs control signals SCR _ C _ RH, SCR _ C _ SH and SCR _ C _ TH which are effective level signals according to the phase of the voltage of a phase-locked R-S, S-T, T-R passing through 0 point; and outputs control signals SCR _ C _ RL, SCR _ C _ SL and SCR _ C _ TL according to the phase of the phase-locked T-R, R-S, S-T line voltage passing through 0 point, wherein the control signals SCR _ C _ RL, SCR _ C _ SL and SCR _ C _ TL are effective level signals; and the holding time of the effective level signal is gradually increased along with the period of the power grid until the bus voltage Vdc tends to be stable.
After the soft start is finished, when the bus voltage Vdc rises to last for a period of time and does not change, the control circuit outputs control signals SCR _ C _ RH, SCR _ C _ SH and SCR _ C _ TH which are all effective level signals and are always kept effective, and the controllable silicon T21, T22 and T23 are conducted; and control signals SCR _ C _ RL, SCR _ C _ SL and SCR _ C _ TL are output, are all effective level signals and are kept effective all the time, and the controllable silicon T24, T25 and T26 are conducted.
In the three-phase bridge fully-controlled rectifier circuit of this embodiment, the specific structure of the thyristor driving circuit refers to the first embodiment, and since this embodiment adopts all the technical solutions of the first embodiment, all the beneficial effects brought by the technical solution of the first embodiment are at least achieved, and are not described in detail herein. The three-phase bridge type fully-controlled rectifying circuit also has the advantage of simple driving logic.
It should be noted that the above-mentioned serial numbers of the embodiments of the present invention are merely for description, and do not represent the merits of the embodiments.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. The utility model provides a silicon controlled rectifier drive circuit, drive circuit is connected with control circuit and silicon controlled rectifier T respectively, its characterized in that, drive circuit includes:
a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side;
the anode of the light emitting diode is connected with the output end of the control circuit, and the cathode of the light emitting diode is connected with the grounding end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T;
the light-emitting diode is conducted and emits light when a control signal SCR _ C output by the control circuit is an effective level signal, the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, and the controllable silicon T is driven to conduct in a triggering mode, so that power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
2. The silicon controlled rectifier drive circuit of claim 1, wherein the drive circuit further comprises:
a drive resistor R3;
the output end of the photosensitive bidirectional controllable silicon is respectively connected with the gate pole G and the cathode K of the controllable silicon T, and the output end of the photosensitive bidirectional controllable silicon comprises:
the output end of the photosensitive bidirectional thyristor is connected with one end of the driving resistor R3, and the other end of the driving resistor R3 is respectively connected with the gate G and the cathode K of the thyristor T.
3. The silicon controlled rectifier drive circuit of claim 1, wherein the drive circuit further comprises:
a resistor R4 and a capacitor C1;
the output end of the photosensitive bidirectional controllable silicon is respectively connected with the gate pole G and the cathode K of the controllable silicon T, and the output end of the photosensitive bidirectional controllable silicon comprises:
the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G of the thyristor T, one end of the resistor R4 and one end of the capacitor C1, and the other end of the resistor R4 and the other end of the capacitor C1 are both connected with the cathode K of the thyristor T.
4. The silicon controlled rectifier drive circuit of claim 1, wherein the drive circuit further comprises:
a current limiting resistor R1 and a resistor R2;
the positive pole of the light emitting diode is connected with the control circuit and comprises:
the anode of the light emitting diode is respectively connected with one end of the current limiting resistor R1 and one end of the resistor R2, the other end of the current limiting resistor R1 is connected with the control circuit, and the other end of the resistor R2 is connected with the cathode of the light emitting diode.
5. The silicon controlled rectifier drive circuit of claim 1,
the photosensitive bidirectional controllable silicon adopts a high voltage-resistant photosensitive bidirectional controllable silicon, and the voltage-resistant value of the photosensitive bidirectional controllable silicon is consistent with the forward voltage-resistant value of the controllable silicon T;
the diode D1 adopts a fast recovery diode with high reverse voltage resistance and low conduction voltage drop, and the reverse voltage resistance value of the diode D1 is consistent with that of the controllable silicon T.
6. The utility model provides a silicon controlled rectifier drive circuit, drive circuit is connected with control circuit and silicon controlled rectifier T respectively, its characterized in that, drive circuit includes:
a driving optocoupler U1 and a diode D1; the driving optocoupler U1 comprises a light emitting diode arranged on a control side and a photosensitive bidirectional triode thyristor arranged on a driving side;
the anode of the light-emitting diode is connected with the power supply end of the control circuit, and the cathode of the light-emitting diode is connected with the output end of the control circuit; the input end of the photosensitive bidirectional triode thyristor is connected with the anode A of the controllable silicon T through the diode D1, and the output end of the photosensitive bidirectional triode thyristor is respectively connected with the gate G and the cathode K of the controllable silicon T;
the light-emitting diode is conducted to emit light when a control signal SCR _ C output by the control circuit is an invalid level signal, and the photosensitive bidirectional controllable silicon is conducted in a photosensitive triggering mode, so that driving current is injected into a gate pole G of the controllable silicon T from an anode A of the controllable silicon T through the diode D1 and the photosensitive bidirectional controllable silicon, the controllable silicon T is driven to conduct in a triggering mode, and power current flows to a cathode K of the controllable silicon T from an anode A of the controllable silicon T.
7. The utility model provides a high-end buffer switch circuit which characterized in that, switch circuit's input is connected with three-phase bridge rectifier circuit, and the output is connected with bus capacitor C2 respectively, switch circuit includes:
the thyristor drive circuit of any one of claims 1 to 6, a thyristor T1, a diode D2, and a resistor R5;
the thyristor driving circuit is connected with the thyristor T1, the anode of the thyristor T1 is respectively connected with the three-phase bridge rectifier circuit, the cathode of the diode D2 and one end of the resistor R5, and the cathode of the thyristor T1 is respectively connected with the anode of the diode D2, the other end of the resistor R5 and the bus capacitor C2.
8. A low-side buffer switch circuit is characterized in that the input end of the switch circuit is connected with a three-phase bridge rectification circuit, the output end of the switch circuit is respectively connected with a bus capacitor C3, and the switch circuit comprises:
the thyristor drive circuit of any one of claims 1 to 6, a thyristor T2, a diode D3, and a resistor R6;
the thyristor driving circuit is connected with the thyristor T2, the cathode of the thyristor T2 is respectively connected with the three-phase bridge rectifier circuit, the anode of the diode D3 and one end of the resistor R6, and the anode of the thyristor T2 is respectively connected with the cathode of the diode D3, the other end of the resistor R6 and the bus capacitor C3.
9. The utility model provides a half accuse rectifier circuit of three-phase bridge type which characterized in that, rectifier circuit's input is connected with three-phase alternating current network, and the output is connected with bus capacitor C4, rectifier circuit includes:
a three-phase upper bridge and a three-phase lower bridge;
the three-phase upper bridge comprises three interconnected thyristor driving circuits and thyristors T according to any one of claims 1 to 6;
the three-phase lower bridge comprises three diodes.
10. A three-phase bridge type fully-controlled rectifying circuit is characterized in that the input end of the rectifying circuit is connected with a three-phase alternating current network, the output end of the rectifying circuit is connected with a bus capacitor C5, and the rectifying circuit comprises:
a three-phase upper bridge and a three-phase lower bridge;
the three-phase upper bridge comprises three interconnected thyristor driving circuits and thyristors T according to any one of claims 1 to 6;
the three-phase lower bridge comprises three interconnected thyristor driving circuits and thyristors T as claimed in any one of claims 1 to 6.
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| WO2023061149A1 (en) * | 2021-10-11 | 2023-04-20 | 苏州汇川控制技术有限公司 | Silicon controlled rectifier drive circuit, silicon controlled rectifier drive application circuit, and electric/electrical device |
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| WO2023061149A1 (en) * | 2021-10-11 | 2023-04-20 | 苏州汇川控制技术有限公司 | Silicon controlled rectifier drive circuit, silicon controlled rectifier drive application circuit, and electric/electrical device |
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