CN216054650U - Power semiconductor module - Google Patents

Abstract

The application discloses power semiconductor module mainly solves the problem that the radiating effect is influenced by the fact that the existing power semiconductor module and a radiator cannot be tightly attached to each other. The power semiconductor module includes a substrate; a frame positioned on and surrounding the substrate; a case covering a combination of the substrate and the frame; the shell, the frame and the substrate enclose a cavity, the top surface of the shell comprises an elastic beam, and the elastic beam applies downward force to the substrate to enable the substrate to be tightly attached to the radiator.

Description

Power semiconductor module

Technical Field

The utility model relates to the technical field of semiconductors, in particular to a power semiconductor module.

Background

At present, the requirements for energy conservation and emission reduction are higher and higher, and the power semiconductor module is widely applied to the fields of industrial frequency conversion, photovoltaics, electric welding machines, wind power, electric automobiles and the like due to the unique advantages of the power semiconductor module. With the wider application range and the more and more severe application environment, the existing packaging form cannot meet more topological structures, and insufficient heat dissipation is also an important problem in the use process of the power semiconductor module. In a power semiconductor module, one or more chips are generally connected to a double-sided copper-clad ceramic substrate (DBC) by soldering or the like, terminals between the chips are also soldered together, and the chips are connected together by metal bonding wires (copper wires and aluminum wires) to form a circuit together with the terminals. And assembling the assembly and the shell which are installed together by using sealant to form a cavity, and filling insulating silica gel in the cavity for isolating each element to form the power semiconductor module.

As technology advances, conventional power semiconductor modules are becoming more and more diversified according to the needs, but power semiconductor modules are generally being developed toward higher capacity, compactness, higher frequency, and the like, and along with this, the heat generation power of semiconductor elements is becoming higher and higher, and therefore, the demand for cooling performance of power semiconductor modules is becoming higher and higher.

In a common cooling structure, the heat dissipation capability of the structure itself is very important, but whether the connection and the attachment of the structure with the power semiconductor module are tight or not also has a great influence on heat conduction, when the power semiconductor module at the present stage is used, the substrate and the radiator which are caused by substrate warping or other reasons can not be completely attached, so that the heat dissipation capability is poor, effective heat dissipation can not be realized, the power semiconductor module is operated at an excessively high temperature for a long time, the power consumption is increased, the service life of the power semiconductor module is damaged, and the probability of the damage of the power semiconductor module is increased. Further, the conventional power semiconductor module is limited in the position and number of terminals, and cannot realize more circuit topologies.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention provides a power semiconductor module, which tightly presses a substrate through an elastic beam structure, so that the substrate is tightly attached to a heat sink, thereby improving the heat dissipation effect; through reasonable arrangement of the elastic beams, more space is made up to realize more circuit topologies.

In order to achieve the purpose, the utility model adopts the following technical scheme:

the present invention provides a power semiconductor module, comprising: a substrate; a frame positioned on and surrounding the substrate; a case covering a combination of the substrate and the frame; the shell, the frame and the substrate enclose a cavity, the top surface of the shell comprises an elastic beam, and the elastic beam applies downward force to the substrate to enable the substrate to be tightly attached to the radiator.

Preferably, the substrate comprises a copper-clad ceramic substrate, and the substrate further comprises a power semiconductor chip.

Preferably, the power semiconductor chip comprises at least one of a reverse conducting type insulated gate bipolar transistor or a combination of an insulated gate bipolar transistor and a fast recovery diode.

Preferably, the elastic beam is located on a first axis of the power semiconductor module, the first axis is a symmetry axis along a long side direction of the power semiconductor module, and the two sides of the elastic beam further include a companion groove separating the elastic beam from at least a partial region of the housing.

Preferably, the number of the elastic beams is two, and the two elastic beams are symmetrically arranged on the first axis.

Preferably, the top surface of the housing further comprises a pouring hole, the pouring hole is close to the center of the housing, and the pouring hole is symmetrically arranged between the two elastic beams.

Preferably, the number of the pouring holes is two, the two pouring holes are symmetrically arranged between the two elastic beams, and the pouring holes are in a round-corner rectangular shape.

Preferably, the number of the pouring holes is two, the two pouring holes are symmetrically arranged between the two elastic beams, and the pouring holes are communicated with the associated groove at one side close to the elastic beams.

Preferably, the number of the filling holes is two, the two filling holes are symmetrically arranged between the two elastic beams, each filling hole is in a round-corner rectangle shape, and one side of each filling hole, which is close to the elastic beam, is provided with a notch protruding towards the elastic beam.

Preferably, the frame includes a beam, the beam is disposed along a second axis of the power semiconductor module, the second axis is perpendicular to the first axis, the second axis is a symmetric axis along a short side direction of the power semiconductor module, and the beam has a protrusion thereon.

Preferably, the top surface of the housing has a protrusion on the inner side thereof, and the protrusion corresponds to the protrusion on the cross member.

Preferably, the lower surface of the elastic beam comprises a pressing block, and the bottom of the pressing block is in contact with the substrate.

Preferably, the number of the base plates is two, and the pressing block corresponds to the center of each base plate.

Preferably, the height of the pressing block is larger than the distance between the inner side surface of the top surface of the shell and the upper surface of the substrate.

Preferably, the frame includes a connection post connected with the housing through a frame connection hole of the housing.

Preferably, the frame further comprises positioning columns, and the positioning columns are matched with the positioning holes of the shell.

Preferably, the top surface of the housing further includes a terminal through hole through which at least a part of the connection terminal passes.

Preferably, the housing further includes a mounting hole through which a bolt passes to fix the power semiconductor module.

Preferably, the frame is provided with a notch at a position corresponding to the mounting hole so as to avoid the bolt, so that the frame does not move or deform along with the bolt in the fixing stage of the power semiconductor module.

The shell of the power semiconductor module provided by the utility model is provided with the elastic beam design, and the substrate in the power semiconductor module is tightly pressed through the elastic force generated by the elastic beam, so that the substrate is tightly attached to the radiator, and the overall radiating effect is improved. Through the reasonable arrangement of the elastic beam structures and the filling holes, the arrangement positions and the number of the connecting terminals are increased, and more circuit topologies are realized.

Drawings

The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

fig. 1 is an exploded schematic view of a power semiconductor module according to a first embodiment of the present invention;

fig. 2 is a perspective view of a power semiconductor module according to a first embodiment of the present invention;

fig. 3 is a longitudinal sectional view of a power semiconductor module of a first embodiment of the present invention;

fig. 4 is a plan view of a housing of a power semiconductor module of a first embodiment of the present invention;

fig. 5 is a schematic view of the back side of the housing of the power semiconductor module of the first embodiment of the present invention;

fig. 6 is a plan view of a frame of a power semiconductor module of the first embodiment of the present invention;

fig. 7 is a schematic perspective view of a frame of a power semiconductor module of the first embodiment of the present invention;

fig. 8 is a top view of a housing of a power semiconductor module of a second embodiment of the present invention;

fig. 9 is a plan view of a housing of a power semiconductor module of a third embodiment of the present invention.

Detailed Description

The present invention will be described below based on examples, but the present invention is not limited to only these examples. In the following detailed description of the present invention, certain specific details are set forth. It will be apparent to one skilled in the art that the present invention may be practiced without these specific details. Well-known methods, procedures, and components have not been described in detail so as not to obscure the present invention.

Fig. 1 is an exploded schematic view of a power semiconductor module according to a first embodiment of the present invention; the power semiconductor module 100 includes a housing 110, a frame 120, and a substrate 130, wherein the substrate 130 is, for example, two left and right substrates, the substrate 130 is provided with a plurality of power semiconductor chips 131, the power semiconductor chips 131 include at least one of a combination of an insulated gate bipolar transistor and a fast recovery diode or a reverse conducting insulated gate bipolar transistor, a terminal cap 132 is provided on a portion of a copper layer of the substrate 130, one end of a connection terminal 133 is inserted into the terminal cap 132 and connected to the terminal cap 132 to electrically connect the connection terminal 133 to the substrate 130, a portion of the copper layer of the substrate 130 has a circuit pattern, the power semiconductor chips 131 and the terminal cap 132 are connected to the substrate 130 by soldering at a pattern-specific position, a circuit is formed among the power semiconductor chips 131, the substrate 130, and the connection terminal 133, the substrate 130 is, for example, a double-sided copper-clad ceramic substrate (DBC) having a connection terminal 133 on an upper surface, the lower surface may be adapted for connection to a heat sink (not shown). The power semiconductor module 100 has two axes, a first axis is a symmetry axis along a long side direction of the power semiconductor module 100, a second axis is perpendicular to the first axis, and the second axis is a symmetry axis along a short side direction of the power semiconductor module 100. The frame 120 is combined with the substrate 130 from above, and then the housing 110 is assembled with the combined assembly, so as to form a cavity surrounded by the frame 120, the substrate 130 and the housing 110 above the substrate 130, and then insulating silicone gel can be poured into the cavity to form electrical isolation, so as to isolate each power semiconductor chip 131 or component, thereby better protecting the substrate 130 and each power semiconductor chip 131 or component thereon. The shell 110 is assembled with the combination of the frame 120 and the substrate 130 from the top, the shell 110 is provided with a terminal through hole 114 corresponding to the connection terminal 133, the size of the terminal through hole 114 is slightly larger than the diameter of the connection terminal 133, so that the connection terminal 133 can penetrate through the terminal through hole 114, of course, the shell 110 is also provided with a pouring hole 115 for pouring insulating silica gel, after the connection is completed, the insulating silica gel is poured into the cavity through the pouring hole 115, and after the insulating silica gel is cured, a package is formed to further protect the substrate 130 and various components thereon in the shell 110. Specifically, the frame 120 is, for example, a rectangular frame, the frame 120 matches the size of the substrate 130, the substrate 130 is, for example, 2, the beam 124 is disposed in the middle (along the second axis) of the frame 120, the beam 124 separates the two substrates 130 and plays a role of fixing the substrates 130, the beam 124 is disposed with a protrusion 125, the lower surface of the beam 124 contacts the substrates 130, each side of the frame 120 is further provided with an upward boss 126, and the boss 126 contacts the inner surface of the casing 110, so that the bottom surface of the casing 110 and the bottom surface of the frame 120 form a height difference. Furthermore, the frame 120 is further provided with connecting posts 121 protruding upwards and having a hollow middle portion on the left and right sides of the periphery of the rectangular frame, the connecting posts 121 are used for connecting with the housing 110, certainly, in order to ensure the accuracy of connection alignment between the housing 110 and the frame 120, the frame 120 is further provided with positioning posts 122 near the connecting posts 121, the positioning posts 122 are cross-shaped, for example, and can play a role in positioning, so as to prevent connection misalignment between the frame 120 and the housing 110, the two positioning posts 122 are two, the two positioning posts 122 are respectively located on two sides of the frame 120, and the shapes of the two positioning posts 122 have differences and are respectively matched with the positioning holes 112 with different diameters on the housing 110. The housing 110 is provided with a frame connecting hole 111 corresponding to the frame 120, a positioning hole 112 and a mounting hole 113 for fixing the whole power semiconductor module, and correspondingly, the frame 120 is provided with a notch 123 at a position corresponding to the mounting hole 113 for avoiding, so that the frame 120 does not move or deform along with the bolt and the mounting hole when the power semiconductor module 100 is fixed. The housing 110 further has a protruding edge 117 disposed around the terminal through hole 114 and the filling hole 115, and further, two elastic beams 116 are disposed on the first axis of the housing 110, the two filling holes 115 are close to the center of the housing 110 and symmetrically disposed between the two elastic beams 115, the two elastic beams 116 are symmetrically disposed about the second axis, the two filling holes 115 are also symmetrically disposed about the second axis, and the elastic beams 116 can provide downward pressure to the substrate 130 to make the substrate 130 well contact with the heat sink, thereby improving the overall heat dissipation effect.

Fig. 2 is a perspective view of a power semiconductor module according to a first embodiment of the present invention; the power semiconductor module 100 in the figure is assembled, as can be seen from fig. 2, the connection posts 121 and the positioning posts 122 are all penetrated out from the corresponding frame connection holes 111 and the positioning holes 112, the height of each connection post is greater than that of the corresponding hole, the connection posts are penetrated out beyond the surface of the housing 110, the connection terminals 133 are penetrated out from the terminal through holes 114 and are exposed out from the surface of the housing for electrical connection with the outside, the whole part surrounded by the protruding edges 117 is divided into four parts, the upper and lower parts are divided by two elastic beams 116 arranged on the first axis and two filling holes 115 between the two elastic beams, the terminal through holes 114 are not arranged at the positions corresponding to the beams 124 of the frame, so as to divide the left and right parts, so that the whole terminal through holes 114 are divided into four regions, the region surrounded by the protruding edges 117 in fig. 2, the parts at both sides of the second axis are symmetrical left and right around the second axis, similarly, the parts at the two sides of the first axis are also vertically symmetrical by taking the first axis as a symmetry axis.

Fig. 3 is a longitudinal sectional view of a power semiconductor module of a first embodiment of the present invention; similarly, the power semiconductor module 100 is shown assembled, and the substrate 130 further has bonding wires 134 for connecting the substrate 130 and the power semiconductor chip 131. The inner side surface of the shell 110 at the corresponding position of the beam 124 of the frame 120 is provided with a bump 119, the bump 119 is matched with a protrusion 125 on the beam 124, and the bump 119 and the protrusion 125 are matched to play a supporting role, so that a height difference is generated between the inner side surface of the top of the shell 110 and the bottom surface of the frame 120. A pressing block 118 is arranged below the elastic beam 116 of the shell 110, the two pressing blocks 118 respectively correspond to the centers of the two substrates 130, the height of the pressing block 118 is greater than the distance between the inner side surface of the top surface of the shell 110 and the upper surface of the substrate 130, and the pressing block 118 provides pressure to the substrate 130 to keep the substrate 130 straight. When the power semiconductor module is mounted on a heat sink, the bolts apply a pre-tightening force through the mounting holes 113 at the two ends of the housing 110, so that the height difference between the housing 110 and the frame 120 is reduced, and the elastic beams 116 apply a downward force to the substrate 130, so that the substrate 130 is flatly attached to the heat sink. The filling hole 115 is a hole site that is generated along with the arrangement of the elastic beam 116, and can also be used as a filling hole, and the dual function of the hole site avoids the position and space occupied by the independent arrangement of the filling hole, so that more terminal through holes 114 can be arranged on the housing 110, and more circuit topologies are realized.

Fig. 4 and 5 are schematic diagrams of a top view and a back surface, respectively, of a housing of a power semiconductor module of a first embodiment of the present invention; as seen from the top view, the outer casing 110 includes a rounded rectangular area surrounded by a protruding edge 117 and ears extending outward from the left and right sides of the area, and four frame connecting holes 111 are formed at four corners (ear areas) of the outer casing 110, and the positions and dimensions of the frame connecting holes are matched with the connecting posts 121 of the frame 120. Further, a positioning hole 112 is provided near the frame connecting hole 111 near the upper left corner of the left ear of the housing 110, and correspondingly, another positioning hole 112 is provided near the frame connecting hole 111 near the lower right corner of the right ear of the housing, and the number of the positioning holes 112 is, for example, not less than two, so as to ensure the positioning accuracy. The housing 110 is further provided with two mounting holes 113 in an ear region, and the two mounting holes 113 are arranged on the left and right sides of the housing 110 in a central symmetry manner. A plurality of terminal through holes 114 are uniformly arranged in an array in a rounded rectangular area surrounded by the convex edge 117, and of course, the position size of the terminal through holes 114 matches with the connecting terminals 133 on the substrate 130, and the arrangement area of the terminal through holes 114 avoids the area corresponding to the cross beam 124 of the frame 120. Two elastic beams 116 are arranged on the first axis of the shell 110 in a left-right symmetrical mode (symmetrical about the second axis), the elastic beams 116 are formed by arranging associated grooves 1161 on the upper side and the lower side of the elastic beams 116, the elastic beams 116 are separated from at least partial area of the shell 110 through the associated grooves 1161, so that the elastic beams can be elastically deformed, and the influence on other areas when the elastic beams are deformed is reduced; 2 filling holes 115 are further arranged between the two elastic beams 116, and the filling holes 115 are rounded rectangles for example.

Further, as can be seen from fig. 5, the housing 110 is provided with a plurality of reinforcing ribs arranged in a longitudinal and transverse direction on the back of the rounded rectangular area surrounded by the protruding edge 117 to enhance the strength, and the position of the housing 110 opposite to the protrusion 125 of the cross beam 124 is provided with a protrusion 119, which plays a supporting role through the cooperation of the protrusion 119 and the protrusion 125. A pressing block 118 is disposed below the two elastic beams 116, the pressing block 118 is, for example, quadrangular prism shaped, and the bottom of the pressing block 118 is cylindrical, and the two pressing blocks 118 respectively correspond to the centers of the two substrates 130 to provide downward pressing force for the substrates 130, so as to ensure the substrates 130 and the heat sink to be attached.

Fig. 6 and 7 are a top view and a perspective view of a frame of a power semiconductor module of a first embodiment of the present invention; it can be seen that the frame 120 also includes a rectangular portion and ears at the left and right sides of the rectangle, the rectangular portion is, for example, double-layered, and each side of the rectangular portion has an upward boss 126, when the frame 120 is combined with the base plate 130, the formed cavity has double-layered side walls, which has better structural stability and can prevent the insulating silicone gel from leaking out from the side during pouring. The frame 120 is provided with a cross beam 124 in the middle of the rectangular area, the cross beam 124 divides the rectangular area into two areas, i.e. a left area and a right area, the cross beam 124 is further provided with a protrusion 125, the protrusion 125 is located in the middle of the cross beam 124, for example, a connecting column 121 and a positioning column 122 are provided in the ear area of the frame 120, and a notch 123 for avoiding a mounting bolt is provided, and of course, the ear on one side of the frame can be provided with a defect or a mark for marking, so as to better distinguish directions. After the sealant is coated on the beam 124 of the frame 120 and the periphery of the frame 120, the two substrates 130 are bonded together, and the combination of the frame 120 and the substrates 130 is completed.

Fig. 8 is a top view of a housing of a power semiconductor module of a second embodiment of the present invention; the power semiconductor module of this embodiment is similar to the first embodiment except for the housing portion, and will not be described again. In this embodiment, the housing 210 is different from that of the first embodiment in that the elastic beam 216, the pouring hole 215 of which is communicated with the associated grooves 2161 at the upper and lower sides of the elastic beam 216, makes the restriction of the elastic beam 216 reduced, and is more easily deformed, and reduces the downward pressure to the substrate, preventing the substrate from being damaged by the excessive pressure.

Fig. 9 is a top view of a housing of a power semiconductor module of a third embodiment of the present invention; similarly, the power semiconductor module of this embodiment is similar to the first embodiment except for the housing portion, and will not be described again. In this embodiment, the housing 310 is different from the housing of the first embodiment in that the filling hole 315 is no longer a regular rounded rectangle, and has a notch 3151 protruding outward on one side, the notch 3151 is equivalent to reducing the cross-sectional area of the filling hole 315 and the elastic beam 316, and the elastic beam 316 has reduced restriction, is easier to deform, and reduces the downward pressure on the substrate.

The elastic beam in each of the above embodiments, and the associated holes (filling holes and associated grooves) generated by the elastic beam may be implemented in other forms, for example, an additional downward-bending arc-shaped elastic structure is directly attached to the inner side surface of the top of the housing, which plays the same role as the elastic beam in this application, and it should be included in the protection scope of this application, and the shape, number, hole position, and the like of each component may be adjusted accordingly according to actual requirements.

The shell of the power semiconductor module provided by the utility model is provided with the elastic beam design, and the substrate in the power semiconductor module is tightly pressed through the elastic force generated by the elastic beam, so that the substrate is tightly attached to the radiator, and the overall radiating effect is improved. Through the reasonable arrangement of the elastic beam structures and the filling holes, the arrangement positions and the number of the connecting terminals are increased, and more circuit topologies are realized.

Further, those of ordinary skill in the art will appreciate that the drawings provided herein are for illustrative purposes and are not necessarily drawn to scale.

Also, it should be understood that the example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous specific details are set forth such as examples of specific components, devices, and methods to provide a thorough understanding of the present disclosure. Those skilled in the art will understand that specific details need not be employed, that example embodiments may be embodied in many different forms and that example embodiments should not be construed as limiting the scope of the disclosure. In some example embodiments, well-known device structures and well-known technologies are not described in detail.

When an element or layer is referred to as being "on," "engaged to," "connected to" or "coupled to" another element or layer, it may be directly on, engaged, connected or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly engaged to," "directly connected to" or "directly coupled to" another element or layer, there may be no intervening elements or layers present. Other words used to describe the relationship between elements should be interpreted in a similar manner (e.g., "between" and "directly between," "adjacent" and "directly adjacent," etc.). As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another element, region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (19)

1. A power semiconductor module, comprising:

a substrate;

a frame positioned on and surrounding the substrate;

a case covering a combination of the substrate and the frame;

the shell, the frame and the substrate enclose a cavity, the top surface of the shell comprises an elastic beam, and the elastic beam applies downward force to the substrate to enable the substrate to be tightly attached to the radiator.

2. The power semiconductor module of claim 1, wherein the substrate comprises a copper-clad ceramic substrate, the substrate further comprising a power semiconductor chip thereon.

3. The power semiconductor module of claim 2, wherein the power semiconductor chip comprises at least one of a reverse conducting type insulated gate bipolar transistor or a combination of an insulated gate bipolar transistor and a fast recovery diode.

4. The power semiconductor module of claim 1, wherein the spring beam is located on a first axis of the power semiconductor module, the first axis being a symmetry axis along a long side direction of the power semiconductor module, and wherein the spring beam further comprises a companion groove on both sides, the companion groove separating the spring beam from at least a partial region of the housing.

5. The power semiconductor module of claim 4, wherein the spring beam comprises two, and the two spring beams are symmetrically arranged on the first axis.

6. The power semiconductor module of claim 5, wherein the top surface of the housing further comprises a potting aperture proximate a center of the housing, the potting aperture being symmetrically disposed between the two spring beams.

7. The power semiconductor module of claim 6, wherein the number of the injection holes is two, the two injection holes are symmetrically arranged between the two elastic beams, and the injection holes are in a shape of rounded rectangles.

8. The power semiconductor module of claim 6, wherein the number of the filling holes is two, the two filling holes are symmetrically arranged between the two elastic beams, and the filling holes are communicated with the associated grooves on a side close to the elastic beams.

9. The power semiconductor module of claim 6, wherein the number of the pouring holes is two, the two pouring holes are symmetrically arranged between the two elastic beams, the pouring holes are rectangular with rounded corners, and the pouring holes are provided with gaps protruding towards the elastic beams on one side close to the elastic beams.

10. The power semiconductor module of claim 4, wherein the frame includes a beam disposed along a second axis of the power semiconductor module, the second axis being perpendicular to the first axis, the second axis being a symmetry axis along a short side of the power semiconductor module, the beam having a protrusion thereon.

11. The power semiconductor module of claim 10, wherein the top surface of the housing has a bump on an inside thereof, the bump corresponding to the protrusion on the beam.

12. The power semiconductor module of claim 1, wherein a lower surface of the spring beam includes a slug, a bottom of the slug being in contact with the substrate.

13. The power semiconductor module of claim 12, wherein the base plate is two pieces, and the compacts correspond to a center of each of the base plates.

14. The power semiconductor module of claim 12, wherein the height of the compact is greater than the distance between the inside of the top surface of the housing and the top surface of the substrate.

15. The power semiconductor module of claim 1, wherein the frame includes connection posts that connect to the housing through frame connection holes of the housing.

16. The power semiconductor module of claim 1, wherein the frame further comprises positioning posts that mate with positioning holes of the housing.

17. The power semiconductor module of claim 1, wherein the top surface of the housing further comprises a terminal through hole, at least a portion of the connection terminal passing through the terminal through hole.

18. The power semiconductor module of claim 1, wherein the housing further comprises mounting holes through which bolts pass to secure the power semiconductor module.

19. The power semiconductor module of claim 18, wherein the frame has a notch at a position corresponding to the mounting hole to avoid the bolt, so that the frame does not move or deform along with the bolt in the fixing stage of the power semiconductor module.

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