CN216016839U - Power semiconductor device drive protection circuit - Google Patents

Power semiconductor device drive protection circuit Download PDF

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Publication number
CN216016839U
CN216016839U CN202121640094.0U CN202121640094U CN216016839U CN 216016839 U CN216016839 U CN 216016839U CN 202121640094 U CN202121640094 U CN 202121640094U CN 216016839 U CN216016839 U CN 216016839U
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module
turn
electrically connected
power semiconductor
power supply
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CN202121640094.0U
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Chinese (zh)
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杨鸿启
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Beijing Mingdong Jinghua Technology Co ltd
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Individual
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Abstract

The utility model discloses a power semiconductor device driving protection circuit in the technical field of electronic circuits, which comprises a power semiconductor element and an anode, wherein the power semiconductor element comprises a power supply and a driving control module, the power supply is electrically connected with a first power supply management module and a second power supply management module, the first power supply management module is electrically connected with a start-stop module, a turn-on module and a turn-off module, the second power supply management module is electrically connected with a standby turn-on module, the driving control module is electrically connected with the start-stop module, the turn-on module, the turn-off module and the standby turn-on module, the anode is electrically connected with a cathode and a gate pole, the circuit is protected by the protection module, a feedback module sends a signal to the driving control module, the second power supply management module is started, and then the standby turn-on module is started, the system can run normally.

Description

Power semiconductor device drive protection circuit
Technical Field
The utility model relates to the technical field of electronic circuits, in particular to a power semiconductor device driving protection circuit.
Background
The power semiconductor device is also called as a power electronic device, is a foundation of a power electronic technology and also a core device forming a power electronic conversion device, along with the rapid development of a novel power semiconductor device represented by a power MOSFET device, the power semiconductor device is very wide at present, is distributed in a large number in the 4C industry represented by computers, current, consumer electronics and automotive electronics, and after a drive protection circuit on the market is powered off, a fault element is difficult to be ensured to be in a conduction or short-circuit state, so that the whole series system is difficult to normally work.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to a power semiconductor device driving protection circuit to solve the above problems.
In order to achieve the purpose, the utility model provides the following technical scheme: a power semiconductor device driving protection circuit comprises a power semiconductor element and an anode, wherein the power semiconductor element comprises a power supply and a driving control module, the power supply is electrically output and connected with a first power supply management module and a second power supply management module, the first power supply management module is electrically output and connected with a start-stop module, a turn-on module and a turn-off module, the second power supply management module is electrically output and connected with a standby turn-on module, the driving control module is electrically output and connected with the start-stop module, the turn-on module, the turn-off module and the standby turn-on module, the anode is electrically output and connected with a cathode and a gate, the turn-on module is electrically output and connected with a circuit detection module, the circuit detection module is electrically output and connected with a trigger control signal module, the trigger control signal module is electrically output and connected with the start-stop module, and the start-stop module is electrically output and connected with a protection module, the feedback module is electrically connected with the driving control module in an output connection mode, and the driving control module is electrically connected with the second power management module in an output connection mode.
Preferably, the anode is fixedly connected with one end of the start-stop module, the turn-on module, the turn-off module and the standby turn-on module.
Preferably, the cathode is fixedly connected with the other ends of the start-stop module, the opening module, the turn-off module and the standby opening module.
Preferably, the start-stop module is located between the gate and the cathode.
Preferably, the power supply is located on the left side of the power semiconductor element.
Preferably, the protection module comprises a fuse.
Preferably, the start-stop module comprises a switch element and a capacitor.
Compared with the prior art, the utility model has the beneficial effects that:
the power supply control device is reasonable in structural design, equipment is powered on through the power supply, the driving control module is electrically connected with the start-stop module, the starting module, the turn-off module and the standby starting module to control a circuit, when the circuit detection module detects that the circuit fails, the control signal module is triggered to start and stop the circuit through the start-stop module, then the circuit is protected through the protection module, meanwhile, the feedback module sends a signal to the driving control module, the second power supply management module is started, then the standby starting module is started, and the power supply control device is convenient for normal operation of a system.
Drawings
FIG. 1 is a diagram of an overall structure driving protection circuit of the present invention;
FIG. 2 is a schematic diagram of a module of the present invention;
FIG. 3 is a schematic diagram of a start-stop module according to the present invention;
fig. 4 is a schematic diagram of a shutdown module according to the present invention.
In the figure: 1. a power semiconductor element; 2. a power source; 3. opening a module; 4. a drive control module; 5. a standby opening module; 6. a gate electrode; 7. an anode; 8. a cathode; 9. a second power management module; 10. a shutdown module; 11. a first power management module; 12. a circuit detection module; 13. a trigger control signal module; 14. a protection module; 15. a feedback module; 16. and a start-stop module.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 2, fig. 3 and fig. 4, the present invention provides a technical solution: a power semiconductor device drive protection circuit comprises a power semiconductor element 1 and an anode 7, wherein the power semiconductor element 1 comprises a power supply 2 and a drive control module 4, the power supply 2 is electrically connected with a first power supply management module 11 and a second power supply management module 9 in an output mode, the first power supply management module 11 is electrically connected with a start-stop module 16, a start-up module 3 and a stop-down module 10 in an output mode, the second power supply management module 9 is electrically connected with a standby start-up module 5 in an output mode, the drive control module 4 is electrically connected with the start-stop module 16, the start-up module 3, the stop-down module 10 and the standby start-up module 5 in an output mode, the anode 7 is electrically connected with a cathode 8 and a gate 6 in an output mode, the start-up module 3 is electrically connected with a circuit detection module 12, the circuit detection module 12 is electrically connected with a trigger control signal module 13 in an output mode, the trigger control signal module 13 is electrically connected with the start-stop module 16, the start-stop module 16 is electrically connected with the protection module 14, the shutdown module 10 is electrically connected with the feedback module 15, the feedback module 15 is electrically connected with the driving control module 4, and the driving control module 4 is electrically connected with the second power management module 9.
Referring to fig. 1, an anode 7 is fixedly connected to one end of a start-stop module 16, an on-module 3, a turn-off module 10 and a standby on-module 5, and the standby on-module 5 can still ensure that equipment can normally operate when a circuit fails;
referring to fig. 1, the cathode 8 is fixedly connected to the other end of the start-stop module 16, the turn-on module 3, the turn-off module 10 and the standby turn-on module 5, and the start-stop module 16, the turn-on module 3 and the turn-off module 10 are matched to prevent equipment from being burned out and avoid unnecessary loss;
referring to fig. 1, the start-stop module 16 is located between the gate 6 and the cathode 8, and the gate 6 is a third pole outside the cathode and the anode and is used for controlling the on-off of the thyristor;
referring to fig. 1, a power supply 2 is located on the left side of a power semiconductor device 1, and the device is powered on by the power supply 2;
referring to fig. 1, the protection module 14 includes a fuse, and the protection module 14 can protect the circuit;
referring to fig. 1, the start-stop module 16 includes a switch device and a capacitor, and the circuit can be started or stopped by the switch device and the capacitor.
The working principle is as follows: firstly, the equipment is electrified through the power supply 2, the circuit is controlled through the electric connection of the driving control module 4, the starting and stopping module 16, the starting module 3, the stopping module 10 and the standby starting module 5, when the circuit detection module 12 detects that the circuit has faults, the circuit is started and stopped through the trigger control signal module 13, the circuit is protected through the protection module 14, meanwhile, the feedback module 15 sends signals to the driving control module 4, the second power supply management module 9 is started, then the standby starting module 5 is started, and the normal operation of the system is facilitated.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims (7)

1. A power semiconductor device drive protection circuit comprising a power semiconductor element (1) and an anode (7), characterized in that: the power semiconductor element (1) comprises a power supply (2) and a drive control module (4), the power supply (2) is electrically connected with a first power management module (11) and a second power management module (9) in an output mode, the first power management module (11) is electrically connected with a start-stop module (16), a turn-on module (3) and a turn-off module (10) in an output mode, the second power management module (9) is electrically connected with a standby turn-on module (5) in an output mode, the drive control module (4) is electrically connected with the start-stop module (16), the turn-on module (3), the turn-off module (10) and the standby turn-on module (5) in an output mode, the anode (7) is electrically connected with a cathode (8) and a gate pole (6), the turn-on module (3) is electrically connected with a circuit detection module (12), the circuit detection module (12) is electrically connected with a trigger control signal module (13) in an output mode, the trigger control signal module (13) is electrically connected with the start-stop module (16), the start-stop module (16) is electrically connected with the protection module (14), the turn-off module (10) is electrically connected with the feedback module (15), the feedback module (15) is electrically connected with the drive control module (4), and the drive control module (4) is electrically connected with the second power management module (9).
2. The power semiconductor device drive protection circuit according to claim 1, wherein: the anode (7) is fixedly connected with one end of the start-stop module (16), the opening module (3), the turn-off module (10) and the standby opening module (5).
3. The power semiconductor device drive protection circuit according to claim 1, wherein: and the cathode (8) is fixedly connected with the other ends of the start-stop module (16), the opening module (3), the turn-off module (10) and the standby opening module (5).
4. The power semiconductor device drive protection circuit according to claim 1, wherein: the start-stop module (16) is located between the gate (6) and the cathode (8).
5. The power semiconductor device drive protection circuit according to claim 1, wherein: the power supply (2) is located on the left side of the power semiconductor element (1).
6. The power semiconductor device drive protection circuit according to claim 1, wherein: the protection module (14) comprises a fuse.
7. The power semiconductor device drive protection circuit according to claim 1, wherein: the start-stop module (16) comprises a switch element and a capacitor.
CN202121640094.0U 2021-07-19 2021-07-19 Power semiconductor device drive protection circuit Active CN216016839U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121640094.0U CN216016839U (en) 2021-07-19 2021-07-19 Power semiconductor device drive protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121640094.0U CN216016839U (en) 2021-07-19 2021-07-19 Power semiconductor device drive protection circuit

Publications (1)

Publication Number Publication Date
CN216016839U true CN216016839U (en) 2022-03-11

Family

ID=80529903

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121640094.0U Active CN216016839U (en) 2021-07-19 2021-07-19 Power semiconductor device drive protection circuit

Country Status (1)

Country Link
CN (1) CN216016839U (en)

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GR01 Patent grant
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TR01 Transfer of patent right

Effective date of registration: 20220705

Address after: 100020 unit 1, 17th floor, building 99, Chaoyang North Road, Chaoyang District, Beijing 2001

Patentee after: Beijing Mingdong Jinghua Technology Co.,Ltd.

Address before: 511300 room 1703, No. 3, nanyinyi street, Nanxiangshan community, Yongning Street, Zengcheng District, Guangzhou City, Guangdong Province

Patentee before: Yang Hongqi

TR01 Transfer of patent right