CN215976037U

CN215976037U - Cavity structure of plasma CVD equipment

Info

Publication number: CN215976037U
Application number: CN202122369186.6U
Authority: CN
Inventors: 来木庆
Original assignee: New Advantage Industry Group Co ltd
Current assignee: New Advantage Industry Group Co ltd
Priority date: 2021-09-27
Filing date: 2021-09-27
Publication date: 2022-03-08
Anticipated expiration: 2031-09-27

Abstract

The utility model discloses a cavity structure of plasma CVD equipment, wherein a fixed seat, a side wall and a top cover are enclosed to form an inner cavity of the plasma CVD equipment, a cavity water-cooling cavity is arranged in the side wall, an air inlet is arranged on the top cover, an exhaust hole is arranged on the fixed seat, an inner platform is arranged at the lower part of the inner cavity and is arranged on the fixed seat through an insulating support ring, an inner platform water-cooling cavity is arranged in the inner platform, the bottom of the inner platform water-cooling cavity is connected with an inner platform water-cooling pipe, a through hole is arranged in the middle of the fixed seat, a waveguide connecting flange pipe for guiding microwaves to enter the inner cavity is arranged at the lower port of the through hole, and the inner platform water-cooling pipe is arranged in the center of the waveguide connecting flange pipe in a penetrating mode. The cavity structure has the advantages of simple structure, high efficiency and convenient operation of taking and placing the base material, and has high practical value.

Description

Cavity structure of plasma CVD equipment

Technical Field

The utility model belongs to the technical field of chemical vapor deposition equipment, and particularly relates to a cavity structure of plasma CVD equipment.

Background

Chemical Vapor Deposition (CVD) is widely used in diamond synthesis, in which a mixture of gases (hydrogen, oxygen, nitrogen, methane, etc.) is heated in a chamber to form a carbon plasma in the chamber, and the carbon in the plasma is continuously deposited on a substrate (carbon substrate) in the chamber, and gradually accumulates and hardens to form a diamond film or sheet. The microwave of the plasma CVD equipment in the prior art is usually input from the top of the cavity, and the deposition platform is arranged at the bottom of the cavity, so the microwave input end of the structure is far away from the deposition platform, the utilization rate of the microwave is not high, and the equipment efficiency is low; on the other hand, the microwave converter and the microwave source connected with the microwave converter are positioned at the top of the cavity, so that the cavity cannot be opened upwards and can only be opened in a mode that the deposition platform descends, the operation of taking and placing the base material is difficult, and the working efficiency is influenced. The disclosure date is 2020, 2.18.s, and chinese patent document No. CN110804732A discloses a plasma CVD device, wherein a cylindrical cavity is fixed on a working platform of a frame, a microwave converter is arranged at the top of the cavity, an annular air inlet channel and an annular air outlet channel surrounding the cavity are arranged on the outer wall of the cavity, a plurality of observation windows are arranged on the periphery of the middle part of the cavity, an opening is arranged at the lower part of the cavity, a lifting mechanism is arranged on the frame, the lifting mechanism comprises a lifting table and a lifting flange arranged on the lifting table and used for sealing the opening of the cavity, a buffer mechanism is arranged between the lifting table and the lifting flange, the cavity table used for placing a substrate is fixed on the lifting table through a support tube, the cavity table is located above the lifting flange and corresponds to the opening of the cavity, and a leakage-proof device is arranged at the lower part of the cavity table. However, the microwave of the plasma CVD device is input from the top of the cavity, and the deposition platform is arranged at the bottom of the cavity, so the microwave input end of the structure is far away from the deposition platform, the utilization rate of the microwave is not high, and the efficiency is low; on the other hand, the microwave converter and the microwave source connected with the microwave converter are positioned at the top of the cavity, so that the cavity cannot be opened upwards and can be opened only in a mode that the deposition platform descends, and the base material is difficult to take and place.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the problems that the cavity structure of the plasma CVD equipment in the prior art is low in microwave utilization rate and low in efficiency and can only be opened in a mode of descending a deposition platform, so that the taking and placing operation of a base material is difficult and the working efficiency is influenced.

The utility model adopts the technical scheme that the cavity structure of the plasma CVD equipment comprises a fixed seat, a cylindrical side wall arranged on the fixed seat and a top cover arranged at the upper end of the side wall, wherein the fixed seat, the side wall and the top cover enclose an inner cavity of the plasma CVD equipment, a cavity water-cooling cavity is arranged in the side wall, an air inlet is arranged on the top cover, an exhaust hole is arranged on the fixed seat, an inner platform is arranged at the lower part of the inner cavity and is arranged on the fixed seat through an insulating support ring, the inner platform water-cooling cavity is arranged in the inner platform, the bottom of the inner platform water-cooling cavity is connected with an inner platform water-cooling pipe, a through hole is arranged in the middle of the fixed seat, a waveguide connecting flange pipe for guiding microwaves to enter the inner cavity is arranged at the lower port of the through hole, and the inner platform water-cooling pipe is arranged in the center of the waveguide connecting flange pipe in a penetrating manner.

The utility model is characterized in that an inner cavity is formed by enclosing a fixed seat, a cylindrical side wall arranged on the fixed seat and a top cover arranged at the upper end of the side wall, wherein a cavity water-cooling cavity is arranged in the side wall, an air inlet used for feeding mixed gas is arranged on the top cover, an exhaust hole is arranged on the fixed seat, and an inner platform used for placing a substrate is arranged at the lower part of the inner cavity. The middle part of the fixed seat is provided with a through hole, the lower port of the through hole is provided with a waveguide connecting flange pipe for guiding microwaves to enter the inner cavity, and the inner platform water cooling pipe is arranged in the center of the waveguide connecting flange pipe in a penetrating way. Different from the cavity in the prior art, the microwave required by heating is input from the bottom of the cavity through a coaxial transmission mechanism consisting of a waveguide connecting flange pipe and an inner platform water-cooling pipe, wherein the inner platform directly guides the microwave into an inner cavity in the form of a transmitting antenna, so that gas in the inner cavity forms plasma above the inner platform, and chemical vapor deposition in the inner cavity is concentrated on a base material of the inner platform. Because the inner platform of the utility model is used as a substrate placing platform and a microwave radiation platform at the same time, the utilization rate of the microwave is very high, and the equipment efficiency is very high; meanwhile, the structure can also improve the shape of a microwave radiation field in the cavity, improve the distribution structure of plasma in the cavity and be beneficial to chemical vapor deposition in the cavity. On the other hand, because the components related to microwave input are arranged below the cavity, the cavity can be opened upwards, for example, the side wall and the top cover are lifted from the fixed seat under the condition that the fixed seat is kept immovable, or the top cover is lifted under the condition that the fixed seat and the side wall are kept immovable, so that the inner platform for placing the base material is exposed, the base material is greatly convenient to take and place, and the problems that the base material is difficult to take and place and the working efficiency is influenced because the existing cavity can only be opened in a mode that the deposition platform is descended are solved.

Preferably, a heat dissipation plate is embedded in the center of the top of the inner platform, the heat dissipation plate forms the top of a cavity of the water cooling cavity of the inner platform, the upper surface of the heat dissipation plate and the top surface of the inner platform are on the same plane, and a sealing ring is arranged between the periphery of the heat dissipation plate and the inner platform. A heat dissipation plate with better heat conduction performance is embedded in the center of the top of the inner platform, so that the heat dissipation effect can be improved; the sealing ring can prevent cooling water in the inner platform water-cooling cavity from entering the inner cavity.

Preferably, the insulating support ring is made of quartz glass, the upper end and the lower end of the insulating support ring are respectively embedded on the inner platform and the fixed seat, and sealing rings are arranged between the insulating support ring and the inner platform and between the insulating support ring and the fixed seat. The quartz glass has the characteristics of insulation and high temperature resistance, and can meet the insulation requirement at high temperature in the cavity; and the sealing ring can isolate the inner cavity from the outside, thereby ensuring the sealing performance of the cavity.

Preferably, the center of the bottom surface of the top cover is provided with a lower boss matched with the side wall, the bottom surface of the lower boss is provided with an annular groove, the annular groove is communicated with the air inlet, an annular cover plate is arranged on a notch of the annular groove, air inlet holes are uniformly arranged along the circumferential direction of the cover plate, the annular groove and the air inlet holes form a uniform air inlet device, and a reed used for preventing microwave leakage is arranged between the top cover and the top surface of the side wall. The bottom surface of the top cover is provided with the lower boss, and the bottom surface of the lower boss is provided with the annular groove communicated with the air inlet, so that the mixed gas entering the cavity can be uniformly dispersed into the annular groove and uniformly enters the inner cavity through the air inlet hole in the annular groove cover plate, and the uniform distribution of the mixed gas in the cavity is ensured.

As preferred, be equipped with the cavity on the top cap, cavity department is equipped with the top water-cooling chamber, the vertical inlet tube that is equipped with in the top water-cooling chamber, the upper end opening of inlet tube is located the top of top water-cooling chamber, and the lower extreme opening of inlet tube is close to the bottom of top water-cooling chamber, and the outlet setting in the top of top water-cooling chamber. The top water cooling cavity is used for cooling the top cover, and the cooling effect of the cavity can be improved.

Preferably, the inner cavity is a stepped body shaft structure with a small upper part and a large lower part, the upper cavity and the lower cavity are in transition connection through a conical surface, a plurality of observation windows penetrating through the side wall are arranged on the periphery of the inner cavity, the inner ends of the observation windows are located on the conical surface, and temperature measuring holes are further formed in the cavity. The inner cavity structure with a small upper part and a large lower part and the conical surface transition structure between the upper cavity and the lower cavity can improve the shape of a microwave radiation field in the cavity on the whole, improve the distribution structure of plasma in the cavity and be beneficial to chemical vapor deposition in the cavity. The observation windows are used for observing the deposition condition on the substrate in the cavity, and are generally 3-6, and can be horizontally or obliquely arranged; the temperature measuring hole is used for arranging a temperature probe and is used for detecting the working temperature in the cavity and ensuring that the temperature in the cavity is within the range of the process requirement.

Preferably, the cavity water-cooling cavity comprises an annular cavity positioned at the upper part of the side wall and a cylindrical cavity positioned at the lower part of the side wall and communicated with the annular cavity, a water inlet of the cavity water-cooling cavity is arranged at the bottom of the cylindrical cavity, and a water outlet of the cavity water-cooling cavity is arranged at the top of the annular cavity; the bottom of the side wall is provided with a support ring, the water inlet of the cavity water cooling cavity is arranged on the support ring, and a sealing ring is arranged between the bottom surface of the support ring and the fixed seat. The annular water cooling cavity and the cylindrical water cooling cavity which are matched with the shape of the inner cavity and the temperature distribution in the inner cavity are arranged, so that the heat dissipation effect can be optimal.

Preferably, the exhaust holes are uniformly distributed around the through holes in the fixed seat, the bottom surface of the fixed seat is provided with a gas collecting groove which covers the exhaust holes, and the gas collecting groove is provided with an exhaust port. When exhausting, the gas in the cavity enters the gas collecting groove through the uniformly distributed exhaust holes and is then exhausted from the exhaust port in a centralized manner.

The utility model has the beneficial effects that: the cavity structure of the plasma CVD equipment effectively solves the problems that the cavity structure of the plasma CVD equipment in the prior art is low in microwave utilization rate and low in efficiency, and can only be opened in a mode of descending a deposition platform, so that the taking and placing operation of the base material is difficult, and the working efficiency is influenced.

Drawings

FIG. 1 is a sectional view showing a chamber structure of a plasma CVD apparatus according to the present invention;

in the figure: 1. the device comprises a fixed seat, 2 parts of a side wall, 3 parts of a top cover, 4 parts of an air inlet, 5 parts of an exhaust hole, 6 parts of an inner platform, 7 parts of an insulating support ring, 8 parts of an inner platform water cooling cavity, 9 parts of an inner platform water cooling pipe, 10 parts of a through hole, 11 parts of a waveguide connecting flange pipe, 12 parts of a heat dissipation plate, 13 parts of a sealing ring, 14 parts of an annular groove, 15 parts of an annular cover plate, 16 parts of a reed, 17 parts of a top end water cooling cavity, 18 parts of an water inlet pipe, 19 parts of a water outlet, 20 parts of an upper cavity, 21 parts of a lower cavity, 22 parts of a conical surface, 23 parts of an observation window, 24 parts of an annular cavity, 25 parts of a cylindrical cavity, 26 parts of a water inlet, 27 parts of a water outlet, 28 parts of a support ring, 29 parts of a sealing ring, 30 parts of a gas collection groove and 31 parts of an exhaust hole.

Detailed Description

The following provides a further description of embodiments of the present invention by way of examples and with reference to the accompanying drawings.

Example 1

In embodiment 1 shown in fig. 1, the cavity structure of the plasma CVD apparatus includes a fixing base 1, a cylindrical side wall 2 disposed on the fixing base, and a top cover 3 disposed at an upper end of the side wall, wherein the top cover is provided with an air inlet 4, the fixing base is provided with an air outlet 5, an inner stage 6 is disposed at a lower portion of an inner cavity, the inner stage is disposed on the fixing base through an insulating support ring 7, and the fixing base, the side wall, and the top cover enclose and form the inner cavity of the plasma CVD apparatus. The inner cavity is a step shaft structure with a small upper part and a large lower part, and comprises an upper cavity 20 and a lower cavity 21, the upper cavity and the lower cavity are in transitional connection through a conical surface 22, a plurality of observation windows 23 penetrating through the side wall are arranged on the periphery of the inner cavity, the inner ends of the observation windows are located on the conical surface, and temperature measuring holes are further formed in the cavity. A cavity water-cooling cavity is arranged in the side wall, the cavity water-cooling cavity comprises an annular cavity 24 positioned at the upper part of the side wall and a cylindrical cavity 25 positioned at the lower part of the side wall and communicated with the annular cavity, a water inlet 26 of the cavity water-cooling cavity is arranged at the bottom of the cylindrical cavity, and a water outlet 27 of the cavity water-cooling cavity is arranged at the top of the annular cavity; the bottom of the side wall is provided with a support ring 28, the water inlet of the cavity water cooling cavity is arranged on the support ring, and a sealing ring 29 is arranged between the bottom surface of the support ring and the fixed seat.

The insulating support ring of the inner stage of this embodiment is made of quartz glass, the upper end and the lower end of the insulating support ring are respectively embedded in the inner stage and the fixing base, and a sealing ring 13 is arranged between the insulating support ring and the inner stage and between the insulating support ring and the fixing base. The inside inner water-cooling chamber 8 that is equipped with of inner tower, the top central authorities of inner tower inlay and be equipped with heating panel 12, the heating panel constitutes the chamber top of inner tower water-cooling chamber, the upper surface of heating panel and the top surface of inner tower are equipped with the sealing washer between the periphery of heating panel and the inner tower on the coplanar. The bottom of the inner platform water-cooling cavity is connected with an inner platform water-cooling pipe 9, a through hole 10 is formed in the middle of the fixing seat, a waveguide connecting flange pipe 11 for guiding microwaves to enter the inner cavity is arranged at the lower port of the through hole, and the inner platform water-cooling pipe penetrates through the center of the waveguide connecting flange pipe.

The top cap bottom surface center of this embodiment is equipped with lateral wall complex lower boss, and the bottom surface of lower boss is equipped with ring channel 14, ring channel and air inlet intercommunication, the notch of ring channel are equipped with annular cover plate 15, evenly are equipped with the inlet port along the circumference of apron, ring channel and inlet port constitute even air inlet unit, are equipped with the reed 16 that is used for preventing the microwave leakage between top cap and the lateral wall top surface. Be equipped with the cavity on the top cap, cavity department is equipped with top water-cooling chamber 17, the vertical inlet tube 18 that is equipped with in the top water-cooling chamber, the upper end opening of inlet tube is located the top of top water-cooling chamber, and the lower extreme opening of inlet tube is close to the bottom of top water-cooling chamber, and the outlet 19 setting of top water-cooling chamber is at the top of top water-cooling chamber.

The exhaust holes of the embodiment are uniformly distributed around the through holes on the fixing seat, the bottom surface of the fixing seat is provided with a gas collecting groove 30 covering the exhaust holes, and the gas collecting groove is provided with an exhaust port 31.

The microwave required by heating is input from the bottom of the cavity through a coaxial transmission mechanism consisting of a waveguide connecting flange pipe and an inner platform water-cooling pipe, wherein the inner platform directly guides the microwave into the inner cavity in the form of a transmitting antenna, so that gas in the inner cavity forms plasma above the inner platform, and chemical vapor deposition in the inner cavity is concentrated on a base material of the inner platform. Because the inner platform of the utility model is used as a substrate placing platform and a microwave radiation platform at the same time, the utilization rate of the microwave is very high, and the equipment efficiency is very high. On the other hand, because the components related to microwave input are arranged below the cavity, the cavity can be opened upwards, for example, the side wall and the top cover are lifted from the fixed seat under the condition that the fixed seat is kept immovable, or the top cover is lifted under the condition that the fixed seat and the side wall are kept immovable, so that the inner table for placing the base material is exposed, and the base material is greatly convenient to take and place.

In addition to the above embodiments, the technical features or technical data of the present invention may be reselected and combined to form new embodiments within the scope of the claims and the specification of the present invention, which are all realized by those skilled in the art without creative efforts, and thus, the embodiments of the present invention not described in detail should be regarded as specific embodiments of the present invention and are within the protection scope of the present invention.

Claims

1. A cavity structure of plasma CVD equipment is characterized in that the cavity structure comprises a fixed seat (1), a cylindrical side wall (2) arranged on the fixed seat and a top cover (3) arranged at the upper end of the side wall, the fixed seat, the side wall and the top cover enclose to form an inner cavity of the plasma CVD equipment, a cavity water cooling cavity is arranged in the side wall, an air inlet (4) is arranged on the top cover, an exhaust hole (5) is arranged on the fixed seat, an inner platform (6) is arranged at the lower part of the inner cavity, the inner platform is arranged on the fixing base through the insulating support ring (7), an inner platform water-cooling cavity (8) is arranged inside the inner platform, the bottom of the inner platform water-cooling cavity is connected with an inner platform water-cooling pipe (9), a through hole (10) is formed in the middle of the fixing base, a lower port of the through hole is provided with a waveguide connecting flange pipe (11) for guiding microwaves to enter the inner cavity, and the inner platform water-cooling pipe penetrates through the center of the waveguide connecting flange pipe.

2. The chamber structure of a plasma CVD apparatus according to claim 1, wherein a heat radiating plate (12) is fitted in the center of the top of the inner stage, the heat radiating plate constitutes the top of the water-cooled chamber of the inner stage, the upper surface of the heat radiating plate and the top surface of the inner stage are on the same plane, and a seal ring is provided between the outer periphery of the heat radiating plate and the inner stage.

3. The chamber structure of plasma CVD apparatus according to claim 1, wherein the insulating support ring is made of quartz glass, upper and lower ends of the insulating support ring are respectively fitted to the inner stage and the holder, and seal rings (13) are provided between the insulating support ring and the inner stage and the holder.

4. A chamber structure of a plasma CVD apparatus as claimed in claim 1, wherein a lower boss engaged with the side wall is provided at the center of the bottom surface of the top cover, an annular groove (14) is provided at the bottom surface of the lower boss, the annular groove communicates with the gas inlet, an annular cover plate (15) is provided at the notch of the annular groove, gas inlet holes are uniformly provided along the circumferential direction of the cover plate, the annular groove and the gas inlet holes constitute a uniform gas inlet means, and a reed (16) for preventing leakage of microwaves is provided between the top cover and the top surface of the side wall.

5. The chamber structure of plasma CVD apparatus according to claim 1, wherein a cavity is formed in the top cover, a top water-cooling chamber (17) is formed in the cavity, a water inlet pipe (18) is vertically formed in the top water-cooling chamber, an upper opening of the water inlet pipe is located at the top of the top water-cooling chamber, a lower opening of the water inlet pipe is close to the bottom of the top water-cooling chamber, and a water outlet (19) of the top water-cooling chamber is formed at the top of the top water-cooling chamber.

6. A chamber structure of a plasma CVD apparatus according to claim 1, wherein the inner chamber has a stepped shaft structure with a small upper part and a large lower part, and includes an upper chamber (20) and a lower chamber (21), the upper and lower chambers are transitionally connected by a tapered surface (22), a plurality of observation windows (23) penetrating through the sidewall are provided on the periphery of the inner chamber, the inner ends of the observation windows are located on the tapered surface, and a temperature measurement hole is further provided on the chamber.

7. The chamber structure of a plasma CVD apparatus according to claim 1, wherein the chamber water-cooling chamber includes an annular chamber (24) located at an upper portion of the side wall and a cylindrical chamber (25) located at a lower portion of the side wall and communicating with the annular chamber, a water inlet (26) of the chamber water-cooling chamber is provided at a bottom of the cylindrical chamber, and a water outlet (27) of the chamber water-cooling chamber is provided at a top of the annular chamber; the bottom of the side wall is provided with a support ring (28), the water inlet of the cavity water cooling cavity is arranged on the support ring, and a seal ring (29) is arranged between the bottom surface of the support ring and the fixed seat.

8. The chamber structure of plasma CVD apparatus according to claim 1, wherein the exhaust holes are uniformly arranged around the through holes of the holder, and a gas collection groove (30) covering the exhaust holes is provided on the bottom surface of the holder, and the gas collection groove is provided with an exhaust port (31).