CN215934827U - Packaging structure of acoustic wave device - Google Patents
Packaging structure of acoustic wave device Download PDFInfo
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- CN215934827U CN215934827U CN202122250417.1U CN202122250417U CN215934827U CN 215934827 U CN215934827 U CN 215934827U CN 202122250417 U CN202122250417 U CN 202122250417U CN 215934827 U CN215934827 U CN 215934827U
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Abstract
The utility model discloses a packaging structure of an acoustic wave device, which relates to the field of semiconductor packaging and comprises a carrier plate, an acoustic wave device and epoxy resin; a bonding pad and a solder mask layer are formed on the first surface of the carrier plate, and at least one bonding pad is exposed out of the solder mask layer; the first surface of the substrate of the acoustic wave device is provided with electrodes, and at least one electrode is connected with a bonding pad exposed out of the solder mask layer, so that the acoustic wave device is inversely arranged on the first surface of the carrier plate; the solder mask layer at least covers the orthographic projection area of the acoustic wave device on the first surface of the carrier plate, and a gap is formed between the solder mask layer and the first surface of the acoustic wave device substrate; the epoxy resin is formed on the first surface of the carrier plate, wraps the acoustic wave device and seals the gap to form a cavity structure. This application has reduced the cavity size between acoustic wave device substrate and the carrier plate through the solder mask for gaseous inflation diminishes, the internal pressure change is less in the cavity, is not enough to damage acoustic wave device major structure, and the device performance can be guaranteed.
Description
Technical Field
The utility model relates to the field of semiconductor packaging, in particular to a packaging structure of an acoustic wave device.
Background
The acoustic wave devices are various in types, such as filters, duplexers, multiplexers and the like, and can be packaged together with other radio frequency devices to form an acoustic wave module. The current communication environment is increasingly complex, and acoustic wave devices and even modules are required to be capable of adapting to various severe occasions such as high humidity, high temperature, low temperature, high pressure and the like, and the requirement on the reliability of the acoustic wave devices and even modules is continuously improved.
The acoustic wave device and the module are high in design difficulty and difficult to manufacture, and if requirements are further made on the reliability of the acoustic wave device and the module, the problem is solved mostly at the cost of improving the process difficulty or increasing the cost. Therefore, the packaging structure which is suitable for packaging various sound wave chips and improving the reliability without adding extra process and cost is designed, and the current requirements can be further met.
SUMMERY OF THE UTILITY MODEL
The present inventors have proposed a packaging structure of an acoustic wave device in view of the above problems and technical requirements, and the technical solution of the present invention is as follows:
an acoustic wave device package structure comprising:
the first surface of the carrier plate is provided with a bonding pad;
the solder mask layer is formed on the first surface of the carrier plate, and at least one welding pad is exposed out of the solder mask layer;
the acoustic wave device comprises a substrate, wherein electrodes are arranged on the first surface of the substrate, and at least one electrode is connected with a bonding pad exposed out of the solder mask layer, so that the acoustic wave device is inversely arranged on the first surface of the carrier plate;
the solder mask layer at least covers the orthographic projection area of the acoustic wave device on the first surface of the carrier plate, and a gap is formed between the solder mask layer and the first surface of the substrate;
and the epoxy resin is formed on the first surface of the carrier plate, wraps the acoustic wave device and seals the gap to form a cavity structure.
Furthermore, circuit structures are arranged on two surfaces of the carrier plate and communicated through metal columns penetrating through the carrier plate.
Further, the solder mask layer covers at least part of the circuit structure on the first surface of the carrier plate.
Furthermore, a solder ball is formed on at least one electrode and connected with the solder pad exposed out of the solder mask layer.
Further, the height of the gap is 5 to 20 μm.
Further, the acoustic wave device is a single acoustic wave chip or an acoustic wave module including at least one acoustic wave chip.
Further, the acoustic wave chip is SAW or BAW.
The beneficial technical effects of the utility model are as follows:
the application discloses a packaging structure of an acoustic wave device, which is characterized in that a thicker solder mask layer covers an orthographic projection area of the acoustic wave device on a first surface of a carrier plate, so that the size of a cavity between a substrate of the acoustic wave device and the carrier plate is reduced, the expansion of gas in the cavity is reduced, the change of internal pressure is small, the main body structure of the acoustic wave device is not damaged enough, and the performance of the device is ensured; meanwhile, due to the existence of the solder mask layer, a gap between the first surface of the substrate and the first surface of the carrier plate is reduced, and the epoxy resin is not easy to permeate the first surface of the substrate when covering, so that the main structure of the acoustic wave device is prevented from being polluted, and the reliability of the acoustic wave device is further improved. In addition, the deformation is reduced after the size of the cavity is reduced, and for the acoustic wave device adopting the flip-chip welding ball, the height of the device is not easy to change violently due to air expansion and contraction, and the welding process is stable; and because the periphery of the welding pad is covered by the solder mask, the solder ball displacement problem is not easy to occur when processes such as solder ball reflow, welding and the like are carried out, the welding reliability is improved, and the welding defective rate is reduced.
Drawings
Fig. 1 is a schematic view of a package structure of an acoustic wave device according to a first embodiment of the present invention.
Fig. 2 is a schematic view of a package structure of an acoustic wave device according to a second embodiment of the present invention.
Fig. 3 is a schematic view of a package structure of an acoustic wave device according to a third embodiment of the present invention.
Detailed Description
The following further describes the embodiments of the present invention with reference to the drawings.
Example one
An embodiment of the present invention provides a package structure of an acoustic wave device, and specifically, with reference to fig. 1, the package structure includes an acoustic wave device, a carrier 9, and an epoxy resin 10, where:
the acoustic wave device is an acoustic surface wave chip which comprises a substrate 1, a piezoelectric structure 4, a conductive electrode 2 and a solder ball 3. The material of the substrate 1 is tantalum, niobium and other acoustic substrates, a piezoelectric structure 4 is formed on the first surface of the substrate 1 by adopting semiconductor processes such as glue homogenizing, photoetching, developing and the like, electrodes 2 are formed on the periphery of the piezoelectric structure 4, and at least one electrode 2 is communicated with the piezoelectric structure 4; and forming a solder ball 3 on the surface of at least one electrode 2 by electroplating or ball-planting process, wherein the solder ball 3 can be a gold ball, a solder ball or other materials suitable for soldering.
The first surface of the carrier plate 9 is provided with a circuit structure 5, pads 11 and a solder mask layer 6, and at least one pad 11 is exposed out of the solder mask layer 6; the second surface of the carrier plate 9 is provided with a circuit structure 8, and the circuit structure 5 and the circuit structure 8 are communicated through a metal column 7 penetrating through the carrier plate 9, so that the signal is led out. Optionally, the carrier 9 may be a rigid organic package substrate, a flexible substrate package carrier, or a ceramic carrier. Optionally, the material of the solder resist layer 6 includes at least one of photoresist, resin, and photosensitive ink.
The electrode 2 is connected with a pad 11 exposed out of the solder mask layer 6 through a solder ball 3, so that the surface acoustic wave chip is inversely arranged on the first surface of the carrier plate 9. The solder mask layer 6 at least covers the orthographic projection area of the surface acoustic wave chip on the first surface of the carrier plate 9, a gap is formed between the solder mask layer 6 and the first surface of the substrate 1, and preferably, the gap height h is 5-20 μm. Optionally, the solder mask layer 6 also covers at least part of the circuit structure 5.
The epoxy resin 10 is formed on the first surface of the carrier plate, wraps the surface acoustic wave chip and seals the gap to form a cavity structure. Alternatively, the epoxy resin 10 is applied by vacuum or pressure.
Optionally, the solder mask layer 6 may be formed by a circuit board printing process of exposure, development, and water washing, or a semiconductor process of spin coating, photolithography, and development.
Example two
An embodiment of the present invention provides a package structure of an acoustic wave device, specifically referring to fig. 2, the package structure includes an acoustic wave device, a carrier 15, and an epoxy resin 16, where:
the acoustic wave device is a bulk acoustic wave chip including a substrate 1, a reflective layer 2, a first electrode 3, a piezoelectric film 4, a conductive via 5, a second electrode 6, a protective layer 7, a bonding electrode 8, and a solder ball 9. A reflecting layer 2 is formed on the first surface of the substrate 1, and the reflecting layer 2 is a reflecting grid formed by multiple layers of tungsten and silicon dioxide structures and plays a role in reflecting signals; a first electrode 3 is formed on the surface of the reflecting layer 2; forming a piezoelectric thin film 4 on the surface of the reflective layer 2 on which the first electrode 3 is formed; the surface of the piezoelectric film 4 is covered with a second electrode 6, the projection areas of the first electrode 3 and the second electrode 6 on the substrate 1 are partially overlapped, and the sound waves bounce back and forth between the two electrodes in the overlapped area to transmit filtering information; the surface of the second electrode 6 is covered with a protective layer 7 for protecting the second electrode 6 and preventing the second electrode from being polluted and oxidized; the first electrode 3 is connected with a welding electrode 8 on the surface of the piezoelectric film 4 through a conduction column 5 penetrating through the piezoelectric film 4, and the second electrode 6 is connected with the welding electrode 8 on the surface of the protective layer 7 through the conduction column 5 penetrating through the protective layer 7; solder balls 9 are implanted on the surface of the welding electrode 8.
Optionally, the substrate 1 is made of a silicon substrate, and the first electrode 3, the second electrode 6 and the piezoelectric film 4 are generated by semiconductor processes such as photoresist uniformizing, photoetching and developing; the first electrode 3 and the second electrode 6 are made of conductive materials such as aluminum, copper and the like, and the piezoelectric film 4 is made of piezoelectric materials such as aluminum nitride, zinc oxide, quartz and the like; the protective layer 7 may be made of a material having insulating, heat insulating, and oxidation preventing properties, such as silicon dioxide, silicone resin, and epoxy resin.
The first surface of the carrier plate 15 is provided with a circuit structure 10, pads 11 and a solder mask 14, and at least one pad 11 is exposed out of the solder mask 14; the second surface of the carrier plate 15 is provided with a circuit structure 13, and the circuit structure 10 and the circuit structure 13 are communicated through a metal post 12 penetrating through the carrier plate 15, so as to realize the derivation of signals. Alternatively, the carrier 15 may be a rigid organic package substrate, a flexible substrate package carrier, or a ceramic carrier. Optionally, the material of the solder mask layer 14 includes at least one of photoresist, resin, and photosensitive ink.
The solder electrode 8 is connected to the pad 11 exposed from the solder mask layer 14 through the solder ball 9, so that the bulk acoustic wave chip is flip-chip mounted on the first surface of the carrier 15. The solder mask layer 14 at least covers the orthographic projection area of the bulk acoustic wave chip on the first surface of the carrier plate 15, and a gap is formed between the solder mask layer 14 and the first surface of the substrate 1, wherein the gap height h is preferably 5-20 μm. Optionally, the solder mask layer 14 also covers at least part of the circuit structure 10.
The structure of the epoxy resin 16 is the same as that of the first embodiment, and is not described in detail here.
EXAMPLE III
An embodiment of the present invention provides a package structure of an acoustic wave device, specifically referring to fig. 3, the package structure includes an acoustic wave device, a carrier 9, and an epoxy resin 11, where:
the acoustic wave device is an acoustic wave module and comprises an acoustic wave chip and a radio frequency chip. The structure of the saw chip and the connection structure between the saw chip and the carrier 9 are the same as those in the first embodiment, and are not described herein again. The radio frequency chip comprises a substrate 1, a wiring structure 2, an electrode 3 and a solder ball 4; a wiring structure 2 is formed on a first surface of a substrate 1, electrodes 3 are formed on the periphery of the wiring structure 2, and a solder ball 4 is formed on the surface of at least one electrode 3 through electroplating or ball-planting technology.
The circuit structure 6, the bonding pad 5 and the solder mask 10 are arranged on the first surface of the carrier plate 9, the circuit structure 8 is arranged on the second surface of the carrier plate 9, and the circuit structure 6 and the circuit structure 8 are communicated through the metal column 7 penetrating through the carrier plate 9, so that the signal is led out. Optionally, the carrier 9 may be a rigid organic package substrate, a flexible substrate package carrier, or a ceramic carrier. Optionally, the material of the solder mask layer 10 includes at least one of photoresist, resin, and photosensitive ink.
The electrode 3 of the radio frequency chip is connected with the pad 5 exposed out of the solder mask layer 10 through the solder ball 4, so that the radio frequency chip is inversely arranged on the first surface of the carrier plate 9. The solder mask layer 10 covers at least the orthographic projection area of the radio frequency chip 102 on the first surface of the carrier plate 9, and a gap is formed between the solder mask layer 10 and the first surface of the substrate 1 of the radio frequency chip, preferably, the gap height h2 is 5-20 μm. Optionally, the solder mask layer 10 also covers at least part of the circuit structure 6.
The structure of the epoxy resin 11 is the same as the first and second examples, and is not described again.
The carrier plate structure and the packaging mode of the first and second examples are the same, and the acoustic wave chips are different, so that the packaging mode is suitable for packaging various acoustic wave chips; the acoustic wave device in the third example is an acoustic wave module including an acoustic wave chip and a radio frequency chip, and the packaging mode of the present application is suitable for packaging a plurality of chips including the acoustic wave chip, and the application range is wide. The area at the chip orthographic projection at support plate first surface all covers has thicker solder mask for cavity structure between the first surface of the substrate of chip and the first surface of support plate is because there is the solder mask of certain thickness and diminishes, and gas expansion is lower, and under the high low temperature environment, cavity volume change is not obvious, and internal pressure is not enough to damage chip major structure, and the chip can not take place the movement on a relatively large scale, has avoided solder ball and support plate to break away from, and the reliability of device obtains obviously promoting. Meanwhile, as the cavity becomes smaller, when the chip is wrapped by the epoxy resin, the epoxy particles permeating into the cavity of the chip become fewer, so that the wiring structure in the core area of the chip is difficult to stain, the influence on the performance of the acoustic wave device is avoided, and the reliability of the acoustic wave device is further improved.
What has been described above is only a preferred embodiment of the present application, and the present invention is not limited to the above embodiment. It is to be understood that other modifications and variations directly derivable or suggested by those skilled in the art without departing from the spirit and concept of the present invention are to be considered as included within the scope of the present invention.
Claims (7)
1. An acoustic wave device package, comprising:
the device comprises a carrier plate, wherein a bonding pad is arranged on a first surface of the carrier plate;
the solder mask layer is formed on the first surface of the carrier plate, and at least one welding pad is exposed out of the solder mask layer;
the acoustic wave device comprises a substrate, wherein electrodes are arranged on the first surface of the substrate, and at least one electrode is connected with a bonding pad exposed out of the solder mask layer, so that the acoustic wave device is inversely arranged on the first surface of the carrier plate;
the solder mask at least covers an orthographic projection area of the acoustic wave device on the first surface of the carrier plate, and a gap is formed between the solder mask and the first surface of the substrate;
and the epoxy resin is formed on the first surface of the carrier plate, wraps the acoustic wave device and seals the gap to form a cavity structure.
2. The package structure of claim 1, wherein circuit structures are disposed on both surfaces of the carrier, and the circuit structures on both surfaces are connected through a metal pillar penetrating through the carrier.
3. The package structure of claim 2, wherein the solder resist layer covers at least a portion of the circuit structure of the first surface of the carrier board.
4. The package structure according to claim 1, wherein a solder ball is formed on the at least one electrode, and the solder ball is connected to the pad exposed to the solder resist layer.
5. The package structure according to claim 1, wherein the height of the gap is 5 μm to 20 μm.
6. The package structure of claim 1, wherein the acoustic wave device is a single acoustic wave chip or an acoustic wave module comprising at least one acoustic wave chip.
7. The package structure of claim 6, wherein the acoustic chip is a SAW or a BAW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122250417.1U CN215934827U (en) | 2021-09-16 | 2021-09-16 | Packaging structure of acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122250417.1U CN215934827U (en) | 2021-09-16 | 2021-09-16 | Packaging structure of acoustic wave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215934827U true CN215934827U (en) | 2022-03-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122250417.1U Active CN215934827U (en) | 2021-09-16 | 2021-09-16 | Packaging structure of acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215934827U (en) |
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2021
- 2021-09-16 CN CN202122250417.1U patent/CN215934827U/en active Active
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