CN215896321U - Epitaxial furnace with temperature field temperature stabilizing function - Google Patents

Epitaxial furnace with temperature field temperature stabilizing function Download PDF

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Publication number
CN215896321U
CN215896321U CN202121926328.8U CN202121926328U CN215896321U CN 215896321 U CN215896321 U CN 215896321U CN 202121926328 U CN202121926328 U CN 202121926328U CN 215896321 U CN215896321 U CN 215896321U
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box body
epitaxial furnace
box
stabilizing function
crucible
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CN202121926328.8U
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王光余
蒋宇飞
蒋苗苗
程宣林
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Wuxi Yinggeke Technology Co ltd
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Wuxi Yinggeke Technology Co ltd
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Abstract

The utility model relates to an epitaxial furnace with a temperature field stabilizing function, which comprises a box body, wherein telescopic air cylinders A are symmetrically arranged on the front and back of the inner wall of the top of the box body, the bottom of the telescopic cylinder A is provided with a sucker, one side wall of the box body is communicated with a side pipe, the surface of the side pipe is provided with a valve B, one side wall of the box body, which is positioned on the side pipe, is connected with an L-shaped plate, the epitaxial furnace is high in working efficiency, can convey and preheat wafers in a good sealed environment, and can save energy consumption of the device in a mode of preventing heat loss.

Description

Epitaxial furnace with temperature field temperature stabilizing function
Technical Field
The utility model relates to the field of epitaxial furnaces, in particular to an epitaxial furnace with a temperature field stabilizing temperature function.
Background
For a semiconductor wafer or other special wafers, the epitaxial film growth on the surface of the wafer needs to be carried out in a process gas environment with certain vacuum degree and temperature, so that the wafer needs to be repeatedly sent into the environment from an external atmospheric state, and then sent out from the environment after the process is finished, the space for the epitaxial film growth of the wafer inevitably needs to be continuously switched between the process state and the atmospheric state, and therefore the processing step of the wafer needs to be applied to an epitaxial furnace device.
However, the existing epitaxial furnace device still has certain defects: at first be current structure need preheat in hoisting the crucible of epitaxial furnace with the wafer through work bar isotructure, the vacuum environment need be guaranteed at this in-process to the epitaxial furnace, and the local leakproofness of work bar and epitaxial furnace grafting can't be effectively guaranteed, present partial epitaxial furnace device can't realize the transport and preheat to the wafer under encapsulated situation, and the work efficiency of epitaxial furnace is lower, in addition, the inside heater of epitaxial furnace is when heating the crucible, its heat can constantly scatter and disappear to the outside through the oven, the power consumption is huge, to these defects and not enough, present accessible design a novel structure and solve.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the defects in the prior art and provides an epitaxial furnace with a temperature field stabilizing function.
In order to achieve the purpose, the utility model adopts the following technical scheme:
an epitaxial furnace with temperature field temperature stabilizing function comprises a box body, wherein telescopic cylinders A are symmetrically arranged on the front and back of the inner wall of the top of the box body, suckers are arranged at the bottom of the telescopic cylinders A, a side wall of the box body is communicated with a side pipe, a valve B is arranged on the surface of the side pipe, an L-shaped plate is connected to one side wall of the box body, which is positioned on the side pipe, electric guide rails A are symmetrically arranged on the front and back of the side wall of the L-shaped plate, the telescopic cylinders B are arranged at the output end of the electric guide rails A, a placing box is connected to the end part of the telescopic cylinders B, the valve A is arranged on the surface of the box body, electric guide rails B are arranged on the inner walls of the two sides of the box body, which is positioned on the lower side of the valve A, support plates are connected to the output end of the electric guide rails B, a preheating frame is connected between the two support plates, and a crucible is arranged at the bottom of the box body, the crucible comprises a crucible body, and is characterized in that a temperature sensor is installed on the side wall of the crucible body, an insulation board is connected to the side wall of the crucible body, an insulation shell is arranged on the outer side of the insulation board, and the insulation shell is connected with the surface of the crucible body.
Preferably, a display is mounted on the surface of the L-shaped plate and electrically connected with the temperature sensor; the temperature sensor is used for measuring the temperature of the crucible in real time, and then the generated data can be displayed by a specific numerical value through the display on the L-shaped plate, so that a worker can know the temperature condition in the box body more intuitively.
Preferably, one end of each of the two placing boxes extends to the inside of the side tube; it is provided with two to place the box, and one is used for taking out the wafer that one side was processed through the side pipe, and inside another was used for putting into the box through the side pipe wafer that will replace processing, the structure setting can improve work efficiency.
Preferably, a heater is arranged in the box body positioned at the two sides of the crucible; the heaters at the two sides of the crucible heat the liquid phase liquid in the crucible, and then the wafer is put into the crucible for preheating operation.
Preferably, the surface of the preheating frame is provided with a plurality of through holes which are uniformly distributed; set up the through-hole, the backup pad is being preheated a hoist and mount to the inside back of crucible like this, and liquid phase liquid can heat the wafer, then when preheating the frame and lifting up the back, inside liquid phase liquid can get back to the crucible again through the through-hole, and the structure sets up rationally.
Preferably, the bottom of the side pipe is connected with a vacuum pump through a pipeline, and the bottom of the vacuum pump is positioned on the upper surface of the L-shaped plate; set up the vacuum pump, the structure can be through the pipeline at any time to the inside evacuation operation of offside pipe and box like this, provides good environment for the processing of wafer.
Compared with the prior art, the utility model has the beneficial effects that:
1. according to the utility model, when the preheating frame heats the wafer through the crucible, the valve A is in an open state, the valve B is in a closed state, the interiors of the box body and the side pipe are in a vacuum state, the wafer is in a good processing environment, the electric guide rail B is started after the wafer is processed, the electric guide rail B drives the preheating frame to ascend through the supporting plate, then the telescopic cylinder A on one side is started, the sucking disc on one side sucks up the wafer on one side in the preheating frame, then the valve A is closed, the valve B is opened, meanwhile, the two electric guide rails A on the L-shaped plate are started, and the telescopic cylinder B pushes the two placing boxes to the lower sides of the two sucking discs.
2. According to the utility model, the placing box at one side is used for containing wafers for processing, the placing box at the other side is used for placing processed wafers, the placing and taking out of the wafers are completed simultaneously in the process, the production efficiency is improved by saving steps, then the two placing boxes are pushed out of the inner part of the side pipe, the valve B is closed, the valve A is opened, and meanwhile, the vacuumizing operation is carried out in the box body, so that the wafer processing state in the box body is recovered again, the heat insulation plate and the heat insulation shell outside the box body can carry out heat insulation operation on the box body in the heating process, the heat loss of the crucible is avoided, and the structure is reasonable.
Drawings
FIG. 1 is a schematic structural diagram of an epitaxial furnace with a temperature field stabilizing function according to the present invention;
fig. 2 is a schematic view of an epitaxial furnace with a temperature field stabilizing function according to an embodiment of the present invention.
In the figure: 1. a box body; 2. a valve A; 3. a suction cup; 4. a telescopic cylinder A; 5. a side tube; 6, a valve B; 7. placing the box; 8. a telescopic cylinder B; 9. an electric guide rail A; 10. a vacuum pump; 11. a support plate; 12. a heat-insulating shell; 13. a crucible; 14. a thermal insulation board; 15. a preheating frame; 16. a temperature sensor; 17. a heater; 18. a display; an L-shaped plate; 20. and an electric guide rail B.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
The first embodiment is as follows:
an epitaxial furnace with a temperature field temperature stabilizing function comprises a box body 1, telescopic cylinders A4 are symmetrically installed on the front and back of the inner wall of the top of the box body 1, suckers 3 are installed at the bottom of the telescopic cylinders A4, a side wall of the box body 1 is communicated with a side pipe 5, a valve B6 is installed on the surface of the side pipe 5, an L-shaped plate 19 is connected to one side wall of the box body 1, electric guide rails A9 are symmetrically installed on the front and back of the side wall of the L-shaped plate 19, a telescopic cylinder B8 is installed at the output end of each electric guide rail A9, a placing box 7 is connected to the end portion of each telescopic cylinder B8, one ends of the two placing boxes 7 extend into the side pipe 5, a vacuum pump 10 is connected to the bottom of the side pipe 5 through a pipeline, and the bottom of the vacuum pump 10 is located on the upper surface of the L-shaped plate 19, as shown in figure 1; it is provided with two to place box 7, and one is used for taking out the wafer that one side was processed through side pipe 5, and inside another was used for putting into box 1 through side pipe 5 the wafer of will replacing processing, the structure setting can improve work efficiency, sets up vacuum pump 10, and the structure can provide good environment through the pipeline at any time to the inside evacuation operation of side pipe 5 and box 1 like this, the processing of giving the wafer.
The surface of the box body 1 is provided with a valve A2, the inner walls of two sides of the box body 1 positioned at the lower side of the valve A2 are provided with electric guide rails B20, the output end of the electric guide rail B20 is connected with support plates 11, a preheating frame 15 is connected between the two support plates 11, the bottom of the box body 1 is provided with a crucible 13, the side wall of the crucible 13 is provided with a temperature sensor 16, the side wall of the box body 1 is connected with a heat insulation plate 14, the outer side of the heat insulation plate 14 is provided with a heat insulation shell 12, the heat insulation shell 12 is connected with the surface of the box body 1, the interior of the box body 1 positioned at two sides of the crucible 13 is provided with a heater 17, and the surface of the preheating frame 15 is provided with a plurality of through holes 15 which are uniformly distributed, as shown in figure 1; the heater 17 of crucible 13 both sides position heats the inside liquid phase liquid of crucible 13, then puts into crucible 13 with the wafer and preheats the operation, sets up the through-hole, and backup pad 11 is preheating frame 15 hoist and mount to crucible 13 inside back like this, and liquid phase liquid can heat the wafer, then when preheating the frame and lifting up the back, inside liquid phase liquid can get back to crucible 13 again through the through-hole, and the structure sets up rationally.
Example two:
a display 18 is arranged on the surface of the L-shaped plate 19, and the display 18 is electrically connected with the temperature sensor 16, as shown in figure 2; the temperature sensor 16 is used for measuring the temperature of the crucible 13 in real time, and the generated data can be displayed by the display 18 on the L-shaped plate 19, so that the worker can more intuitively know the temperature condition inside the box body 1.
The working principle is as follows: when the preheating frame 15 heats the wafer through the crucible 13, the valve a2 is in an open state, the valve B6 is in a closed state, the interiors of the box body 1 and the side tube 5 are in a vacuum state, the wafer is in a good processing environment, after the wafer processing is finished, the electric guide rail B20 is started, the electric guide rail B20 drives the preheating frame 15 to ascend through the supporting plate 11, then the telescopic cylinder a4 on one side is started, the sucking disc 3 on one side sucks up the wafer on one side in the preheating frame 15, then the valve a2 is closed and the valve B6 is opened, meanwhile, the two electric guide rails a9 on the L-shaped plate 19 are started, the telescopic cylinder B8 pushes the two placing boxes 7 to the lower sides of the two sucking discs 3, the placing box 7 on one side contains the wafer to be processed, the placing box 7 on the other side is used for placing the processed wafer, the placing and the taking out of the wafer are finished at the same time, thereby improved production efficiency through saving the step, later with two inside of placing box 7 release side pipe 5 and close valve B6 and open valve A2, carry out the evacuation operation in to box 1 simultaneously for resume wafer processing state in the box 1 again, the outside heated board 14 of box 1 and heat preservation casing 12 can carry out the heat preservation operation to box 1 in the heating process, avoid crucible 13's heat to run off rapidly, the structure sets up rationally.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and equivalent alternatives or modifications according to the technical solution of the present invention and the inventive concept thereof should be covered by the scope of the present invention.

Claims (6)

1. The epitaxial furnace with the temperature field stabilizing function comprises a box body (1) and is characterized in that telescopic cylinders A (4) are symmetrically installed on the front and back of the inner wall of the top of the box body (1), suckers (3) are installed at the bottom of the telescopic cylinders A (4), a side wall of the box body (1) is communicated with a side pipe (5), a valve B (6) is installed on the surface of the side pipe (5), an L-shaped plate (19) is connected to one side wall of the box body (1) located on the side pipe (5), electric guide rails A (9) are symmetrically installed on the front and back of the side wall of the L-shaped plate (19), the telescopic cylinders B (8) are installed at the output end of the electric guide rails A (9), a placing box (7) is connected to the end of the telescopic cylinders B (8), a valve A (2) is installed on the surface of the box body (1), electric guide rails B (20) are installed on the inner walls of the two sides of the box body (1) located on the lower side of the valve A (2), the output of electronic guide rail B (20) is connected with backup pad (11), two be connected with between backup pad (11) and preheat frame (15), the bottom of box (1) is provided with crucible (13), temperature sensor (16) are installed to the lateral wall of crucible (13), the lateral wall of box (1) is connected with heated board (14), the outside of heated board (14) is provided with heat preservation casing (12), heat preservation casing (12) and box (1) surface connection.
2. An epitaxial furnace with temperature field stabilizing function according to claim 1, characterized in that the surface of the L-shaped plate (19) is provided with a display (18), and the display (18) is electrically connected with the temperature sensor (16).
3. An epitaxial furnace with temperature field stabilizing function according to claim 1, characterized in that one end of the two placing boxes (7) extends to the inside of the side pipe (5).
4. An epitaxial furnace with temperature field stabilizing function according to claim 1, characterized in that the interior of the box body (1) at the two sides of the crucible (13) is provided with a heater (17).
5. The epitaxial furnace with the temperature field stabilizing function according to claim 1, wherein the surface of the preheating frame (15) is provided with a plurality of uniformly distributed through holes.
6. The epitaxial furnace with the temperature field stabilizing function according to claim 1, wherein the bottom of the side pipe (5) is connected with a vacuum pump (10) through a pipeline, and the bottom of the vacuum pump (10) is positioned on the upper surface of the L-shaped plate (19).
CN202121926328.8U 2021-08-17 2021-08-17 Epitaxial furnace with temperature field temperature stabilizing function Active CN215896321U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121926328.8U CN215896321U (en) 2021-08-17 2021-08-17 Epitaxial furnace with temperature field temperature stabilizing function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121926328.8U CN215896321U (en) 2021-08-17 2021-08-17 Epitaxial furnace with temperature field temperature stabilizing function

Publications (1)

Publication Number Publication Date
CN215896321U true CN215896321U (en) 2022-02-22

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ID=80563560

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121926328.8U Active CN215896321U (en) 2021-08-17 2021-08-17 Epitaxial furnace with temperature field temperature stabilizing function

Country Status (1)

Country Link
CN (1) CN215896321U (en)

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