CN215871163U - Drive circuit of isolated double-channel gate driver - Google Patents
Drive circuit of isolated double-channel gate driver Download PDFInfo
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- CN215871163U CN215871163U CN202121197261.9U CN202121197261U CN215871163U CN 215871163 U CN215871163 U CN 215871163U CN 202121197261 U CN202121197261 U CN 202121197261U CN 215871163 U CN215871163 U CN 215871163U
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- 239000003990 capacitor Substances 0.000 claims abstract description 27
- 230000009977 dual effect Effects 0.000 claims description 11
- 238000010586 diagram Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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Abstract
The utility model discloses a drive circuit of an isolated dual-channel gate driver, which comprises a chip U1, wherein a pin 3 and a pin 6 of the chip U1 are connected to a power supply voltage VCC through a connecting resistor R5 and are connected with a pin 8 and a resistor R6 through a capacitor C4, and one end of a resistor R6 is grounded; compatibility of the chip U1 is achieved by adjusting the resistor R5, the capacitor C4 and the resistor R6. The drive circuit of the isolated double-channel gate driver provided by the utility model is compatible with various chips, the compatibility of various chips can be realized by adjusting the specified resistance and capacitance in the circuit, and the compatibility can be realized by only drawing a circuit diagram and manufacturing a circuit board, so that the production efficiency is improved, the design cost and the production cost are reduced, and the drive circuit has important practical significance under the situation that the supply period of electronic components mainly comprising chips is infinitely prolonged and the price is greatly increased.
Description
Technical Field
The utility model relates to the technical field of drive circuits of isolated dual-channel gate drivers, in particular to a drive circuit of an isolated dual-channel gate driver.
Background
At present, in the high-power conversion topology application of the switching power supply, the control circuit controls most of the common chips of the isolation driver of the power switching device, for example, SI8235BD of Silicon Labs, and the application circuit diagram is shown in fig. 1. However, unexpected and unpredictable factors such as long supply period, sudden price rise and the like often exist, other chips such as the UCC21520DW of Ti, the NSI6602B-DSWR of NOVOSENSE, the NCP51561BBDWR2G-ON of ON, the 2EDS 823565 8265H of Infineon and the ADUM4332B of ADI are required to be replaced at the moment, but different chips are different in connected circuit, different in pin definition and not directly compatible, and corresponding circuit schematic diagrams and circuit boards are required to be designed for application.
For example:
the UCC21520DW of Ti is fully compatible with NSI6602B-DSWR of NOVOSENSE, the power supply Voltage (VCC) is 5V, the application circuit is shown in FIG. 2, and the difference is that the pin 6 is DT (dead time, DT); instead of SI8235BD, pin 6 needs to be connected to the supply voltage VCC.
The ON NCP51561BBDWR2G-ON application circuit is shown in fig. 3, with the difference that pin 6 is DT (dead time, DT) and pin 7 is ANB; instead of SI8235BD, pin 6 needs to be connected to VCC and pin 7 to GND (ground).
The 2EDS8265H application circuit of Infineon is shown in fig. 4, and the difference is that its pin 6 is DT (dead time, DT), and pin 8 is SLDON, instead of SI8235BD, a series resistor R4 and a capacitor C4 are needed to stabilize its supply voltage VCC at 3.3V, and connect the pin 6 to VCC, and the pin 8 to GND.
ADUM4332B applied circuit of ADI is shown in FIG. 5, with the difference that the supply voltage VCC is 3.3V; when the resistor replaces SI8235BD, a resistor R5 and a resistor R6 are required to be connected in series, so that VCC is stabilized at 3.3V.
When a conventional chip is not available for various reasons, the replacement of the chip requires redrawing a circuit diagram and remanufacturing a circuit board, which increases the workload, prolongs the production period, and increases the design and production costs.
SUMMERY OF THE UTILITY MODEL
The utility model provides a drive circuit of an isolated dual-channel gate driver, which is used for solving the problem of difference of application of isolated dual-channel gate drivers of different chips.
In order to achieve the above object, the present invention provides a driving circuit of an isolated dual-channel gate driver, the driving circuit includes a chip U1, a pin 3 and a pin 6 of the chip U1 are connected to a power supply voltage VCC through a connection resistor R5, and are connected to a pin 8 and a resistor R6 through a capacitor C4, one end of the resistor R6 is grounded; compatibility of the chip U1 is achieved by adjusting the resistor R5, the capacitor C4 and the resistor R6.
Preferably, pin 4, pin 5 and pin 7 of the chip U1 are connected to the supply voltage VCC through a capacitor C3.
Preferably, pin 4, pin 5 and pin 7 of the chip U1 are grounded.
Preferably, the resistor R5 and the capacitor C4 are provided with a 0 ohm resistor short circuit, and the resistor R6 is open circuit.
Preferably, the resistor R5 is provided with a 560 ohm resistor, the capacitor C4 is provided with a 22nF capacitor, and the resistor R6 is provided with a 0 ohm resistor.
Preferably, the resistor R5 is provided with a 330 ohm resistor, the capacitor C4 is provided with a 0 ohm resistor, and the R6 is provided with a 1K ohm resistor.
The drive circuit of the isolated double-channel gate driver provided by the utility model is compatible with various chips, the compatibility of various chips can be realized by adjusting the specified resistance and capacitance in the circuit, and the compatibility can be realized by only drawing a circuit diagram and manufacturing a circuit board, so that the production efficiency is improved, the design cost and the production cost are reduced, and the drive circuit has important practical significance under the situation that the supply period of electronic components mainly comprising chips is infinitely prolonged and the price is greatly increased.
Drawings
FIG. 1 is a circuit diagram of a prior art driver circuit using an isolated dual channel gate driver using a SI8235BD chip from Silicon Labs;
FIG. 2 is a circuit diagram of a prior art driver circuit for an isolated dual channel gate driver using a UCC21520DW chip of Ti and a NSI6602B-DSWR chip of NOVOSENSE;
FIG. 3 is a circuit schematic of a prior art isolated dual channel gate driver circuit using an ON NCP51561BBDWR2G-ON chip;
FIG. 4 is a circuit schematic diagram of a prior art driver circuit for an isolated dual channel gate driver using the 2EDS8265H chip from Infineon;
FIG. 5 is a circuit diagram of a prior art driver circuit of an isolated dual channel gate driver using ADI ADUM4332B chip;
fig. 6 is a circuit diagram of a driving circuit of an isolated dual-channel gate driver according to an embodiment of the utility model.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 6, the present invention provides a driving circuit of an isolated dual channel gate driver, the driving circuit includes a chip U1, a pin 3 and a pin 6 of the chip U1 are connected to a power supply voltage VCC through a connection resistor R5, and are connected to a pin 8 and a resistor R6 through a capacitor C4, and one end of a resistor R6 is grounded; compatibility of the chip U1 is achieved by adjusting the resistor R5, the capacitor C4 and the resistor R6. Pin 4, pin 5 and pin 7 of the chip U1 are connected with a power supply voltage VCC through a capacitor C3; pin 4, pin 5, and pin 7 of the chip U1 are grounded. The pin 1 and the pin 2 of the chip U1 are respectively connected with a resistor R1 and a resistor R3 in series and then connected with a PWM power supply, the pin 1 of the chip U1 is connected with a capacitor C1 in parallel through a resistor R2 and then grounded, and the pin 2 of the chip U1 is connected with a capacitor C2 in parallel through a resistor R4 and then grounded.
When the driving circuit of the isolated dual-channel gate driver of various chips is implemented, the compatibility of various chips can be implemented by adjusting the resistor R5, the capacitor C4 and the resistor R6, and specifically, the following three embodiments are provided.
Example one
The first embodiment of the utility model provides a chip using SI8235BD of Silicon Labs, a UCC21520DW chip of Ti, an NSI6602B-DSWR chip of NOVOSENSE and an ON NCP51561BBDWR2G-ON chip, wherein 0 ohm resistor short circuit is arranged ON the resistor R5 and the capacitor C4, and the resistor R6 is open circuit.
Example two
The second embodiment of the utility model provides a 2EDS8265H chip using Infineon, wherein 560 ohm resistors are installed on the resistor R5, 22nF capacitors are installed on the capacitor C4, and 0 ohm resistors are installed on the resistor R6. Where nF represents the capacitance unit nanofarad.
EXAMPLE III
The third embodiment of the present invention provides an adim 4332B chip using ADI, wherein a 330 ohm resistor is installed in the resistor R5, a 0 ohm resistor is installed in the capacitor C4, and a 1K ohm resistor is installed in the resistor R6.
Compared with the prior art, the drive circuit of the isolated double-channel gate driver provided by the utility model is compatible with multiple chips, the compatibility of the multiple chips can be realized by adjusting the specified resistance and capacitance in the circuit, and the compatibility can be realized by only drawing a circuit diagram and manufacturing a circuit board, so that the production efficiency is improved, the design cost and the production cost are reduced, and the drive circuit of the isolated double-channel gate driver has important practical significance under the conditions of infinite extension of supply periods and sudden price expansion of electronic components mainly comprising the chips.
While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the utility model.
Claims (6)
1. A drive circuit of an isolated dual-channel gate driver is characterized by comprising a chip U1, wherein a pin 3 and a pin 6 of the chip U1 are connected to a power supply voltage VCC through a connecting resistor R5 and are connected with a pin 8 and a resistor R6 through a capacitor C4, and one end of a resistor R6 is grounded; compatibility of the chip U1 is achieved by adjusting the resistor R5, the capacitor C4 and the resistor R6.
2. The isolated dual channel gate driver driving circuit of claim 1, wherein pin 4, pin 5 and pin 7 of the chip U1 are connected to the supply voltage VCC via a capacitor C3.
3. The isolated dual channel gate driver circuit as claimed in claim 1, wherein pins 4, 5 and 7 of the chip U1 are grounded.
4. The isolated dual channel gate driver driving circuit as claimed in claim 1, wherein the resistor R5 and the capacitor C4 are short-circuited by a 0 ohm resistor, and the resistor R6 is open-circuited.
5. The isolated dual channel gate driver circuit as claimed in claim 1, wherein the resistor R5 is mounted with 560 ohm resistor, the capacitor C4 is mounted with 22nF capacitor, and the resistor R6 is mounted with 0 ohm resistor.
6. The isolated dual channel gate driver circuit as claimed in claim 1, wherein the resistor R5 is mounted with a 330 ohm resistor, the capacitor C4 is mounted with a 0 ohm resistor, and the R6 is mounted with a 1K ohm resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121197261.9U CN215871163U (en) | 2021-05-31 | 2021-05-31 | Drive circuit of isolated double-channel gate driver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121197261.9U CN215871163U (en) | 2021-05-31 | 2021-05-31 | Drive circuit of isolated double-channel gate driver |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215871163U true CN215871163U (en) | 2022-02-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121197261.9U Active CN215871163U (en) | 2021-05-31 | 2021-05-31 | Drive circuit of isolated double-channel gate driver |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215871163U (en) |
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2021
- 2021-05-31 CN CN202121197261.9U patent/CN215871163U/en active Active
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Address after: 518125 West half floor, 601, 701 of Building 4, Fubilun Technology Factory, Tantou Community, Songgang Street, Bao'an District, Shenzhen City, Guangdong Province, China Patentee after: Shenzhen Lianming Power Supply Co.,Ltd. Country or region after: China Address before: 518125 floor 10, floor 11 and floor 9 of plant 1 and plant 2, No. 128, Shangnan East Road, Huangpu Community, Xinqiao street, Bao'an District, Shenzhen, Guangdong Patentee before: SHENZHEN LIANMING POWER Co.,Ltd. Country or region before: China |
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| CP03 | Change of name, title or address |