CN215869723U - SPDT switch assembly and power distribution switch system - Google Patents
SPDT switch assembly and power distribution switch system Download PDFInfo
- Publication number
- CN215869723U CN215869723U CN202121665659.0U CN202121665659U CN215869723U CN 215869723 U CN215869723 U CN 215869723U CN 202121665659 U CN202121665659 U CN 202121665659U CN 215869723 U CN215869723 U CN 215869723U
- Authority
- CN
- China
- Prior art keywords
- spdt switch
- output
- switch assembly
- channel
- dielectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The application discloses SPDT switch module and power distribution switch system, this SPDT switch module includes: the dielectric substrate integrated waveguide power divider is provided with a shared input channel and at least two output channels; the controller is used for controlling each output channel to be in a conducting state or an isolating state; and the frequency bands of the signals transmitted by different output channels are different. The SPDT switch component and the power dividing switch system disclosed in the embodiment of the application provide a switching test which can be realized on two microwave frequency bands through the SPDT switch component, and the test efficiency is effectively improved.
Description
Technical Field
The embodiment of the utility model relates to a microwave technology, in particular to an SPDT switch component and a power dividing switch system.
Background
Sensors (e.g., radars) are systems that find objects using electromagnetic waves and determine their spatial positions, and since the high frequency band is an open band in many countries, sensing systems operating in the high frequency (e.g., millimeter wave) band have a wide range of applications.
In the process of designing a sensing system of a high-frequency wave band, each part of the sensing system needs to be tested. While sensing systems in the high frequency band often have multiple operating bands, for example, in the case of millimeter wave radar, both 60GHz and 77GHz operating bands may be used. Therefore, when a sensing system to be tested with a plurality of working frequency bands is tested, if test links of different working frequency bands are frequently replaced, the test efficiency is affected.
SUMMERY OF THE UTILITY MODEL
The utility model provides an SPDT switch assembly and a power dividing switch system, provides an SPDT switch which can be used in a microwave frequency band, and improves the testing efficiency.
In a first aspect, an embodiment of the present invention provides an SPDT switch assembly, including:
the dielectric substrate integrated waveguide power divider is provided with a shared input channel and at least two output channels;
the controller is used for controlling each output channel to be in a conducting state or an isolating state;
and the frequency bands of the signals transmitted by different output channels are different.
It should be noted that the controller may be a physical control component, and may also be an electrical control component, so as to implement control over the operating state of the output channel. When the physical control assembly is adopted, the conducting state or the isolating state of each output channel can be respectively controlled by arranging the metal patches. In addition, when an electric control component is adopted, the conducting state or the isolating state of each output channel can be respectively controlled by arranging a mode such as a PIN tube or an MEMS switch.
In a possible implementation manner of the first aspect, at least a part of the output passages are provided with partition grooves; and
the controller comprises a metal patch matched with the partition groove in size;
and aiming at any output channel, when the metal patch is attached in the partition groove, the output channel is in the conduction state, otherwise, the output channel is in the partition state.
In a possible implementation manner of the first aspect, each of the output passages is provided with a partition groove;
and aiming at the two output channels, when the frequency bands of the transmission signals are different, the positions of the partition grooves in the two output channels are also different, and the two output channels are subsequently connected with test systems with different frequency bands.
In a possible implementation manner of the first aspect, the dielectric substrate integrated waveguide power divider includes:
a dielectric substrate integrated waveguide substrate; and
the metal layer covers the upper surface of the dielectric substrate integrated waveguide substrate;
and the partition groove penetrates through the metal layer to reach the upper surface of the dielectric substrate integrated waveguide substrate.
In a possible implementation manner of the first aspect, the common input channel and each of the output channels are each defined by two metallized via strips;
the metallized through hole belt comprises a plurality of metallized through holes which are uniformly distributed.
In a possible implementation manner of the first aspect, one metallized via strip is shared between two adjacent output channels.
In a possible implementation manner of the first aspect, the shape and the size of each of the metalized through holes are the same.
In a possible implementation manner of the first aspect, the dielectric substrate integrated waveguide power divider is a Y-type power divider;
when the SPDT switch assembly works, one output channel is used for transmitting signals in a 60GHz frequency band, and the other output channel is used for transmitting signals in a 77GHz frequency band.
In a second aspect, an embodiment of the present invention provides a power dividing switch system, including:
the signal source, namely the piece to be measured, can provide the signal of at least one frequency channel;
at least two signal processing chains; and
an SPDT switch assembly as described in any one of the possible implementations of the first aspect;
each output channel of the SPDT switch assembly is connected to one of the signal processing links, and is used as a power divider or a switch for the signal provided by the signal source.
In a possible implementation manner of the second aspect, the signal source, that is, the to-be-detected component, may provide signals of at least two frequency bands;
when the signal to be detected of the signal source is switched in different frequency bands, the SPDT switch component outputs a signal of one frequency band in the signals of at least two frequency bands; and
the SPDT switch components have different frequency ranges of output signals and different output paths in a conducting state.
The SPDT switch component and the power dividing switch system provided by the embodiment of the utility model are composed of a dielectric substrate integrated waveguide power divider and a controller, wherein the dielectric substrate integrated waveguide power divider is provided with a shared input channel and at least two output channels, and the controller is used for controlling the output channels to be in a conducting state or an isolating state; when the SPDT switch assembly works, frequency bands of signals transmitted by different output channels are different, and the SPDT switch assembly provided by this embodiment can work in a higher microwave frequency band, for example, a millimeter wave frequency band, under the design based on the substrate integrated waveguide.
Drawings
Fig. 1 is a schematic structural diagram of an SPDT switch assembly according to an embodiment of the present invention;
fig. 2 is a schematic diagram of S parameter of the SPDT switch assembly provided in this embodiment when operating in the switch state;
fig. 3 is a schematic structural diagram of a power division switch system according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the utility model and are not limiting of the utility model. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic structural diagram of an SPDT switch assembly according to an embodiment of the present invention, and as shown in fig. 1, the SPDT switch assembly according to the embodiment includes: the dielectric substrate integrates a waveguide power divider 11 and a controller 12. The dielectric Substrate Integrated Waveguide power divider 11 is a structure designed based on a Substrate Integrated Waveguide (SIW).
The dielectric substrate integrated waveguide power divider 11 is a circuit designed based on SIW, the dielectric substrate integrated waveguide power divider 11 has a common input channel 14 and at least two output channels disposed on a dielectric substrate integrated waveguide substrate 13, and the first output channel 15 and the second output channel 16 are illustrated as an example in fig. 1. The dielectric substrate integrated waveguide substrate 13 is a dielectric substrate integrated waveguide substrate with metal layers covered on the upper and lower surfaces, a first output channel 15 and a second output channel 16 which conform to the SIW structure and extend side by side are arranged on the dielectric substrate integrated waveguide substrate 13, and one end openings of the first output channel 15 and the second output channel 16 extend and converge to the common input channel 14. Each channel on the dielectric substrate integrated waveguide power divider 11 may be designed in any structure conforming to SIW, for example, a SIW channel may be formed between two parallel metalized via strips by disposing the metalized via strips with intervals on the dielectric substrate integrated waveguide substrate 13, as shown in fig. 1, the first output channel 15 and the second output channel 16 are respectively formed by two parallel metalized via strips on the dielectric substrate integrated waveguide substrate 13, and each metalized via strip includes a plurality of metalized vias 17. The two metallized via strips constituting the first output channel 15 and the second output channel 16 merge at one end into a common input channel 14, i.e. at one end into a common input channel 14 consisting of two metallized via strips parallel to each other. The size of each metallized via 17 on the dielectric substrate integrated waveguide substrate 13 and the distance between each metallized via 17 on each metallized via strip is determined based on the desired performance of each channel. The shape and size of each metallized via may be the same.
In addition, in order to reduce the area of the dielectric substrate integrated waveguide substrate 13, two adjacent channels on the dielectric substrate integrated waveguide power divider 11 may share the same metalized via strip, as shown in fig. 1, and one metalized via strip between the adjacent first output channel 15 and second output channel 16 is shared by the first output channel 15 and second output channel 16. In order to further reduce the area of the dielectric substrate integrated waveguide substrate 13, as shown in fig. 1, the dielectric substrate integrated waveguide power divider 11 includes a first output channel 15, a second output channel 16 and two output channels, the two output channels of the first output channel 15 and the second output channel 16 are in a Y-shaped structure on the dielectric substrate integrated waveguide substrate 13, and the first output channel 15 and the second output channel 16 are parallel to each other, so that the area of the dielectric substrate integrated waveguide substrate 13 can be reduced to the greatest extent.
The first output channel 15 and the second output channel 16 are two different output channels, each of which can be an independent SIW, and can realize transmission of microwave signals. The first output channel 15 and the second output channel 16 have the same input port and different output ports, as shown in fig. 1, the input port of the first output channel 15 is a first port 18, and the output port is a second port 19; the input port of the second output channel 16 is a first port 18 and the output port is a third port 20. That is, the input ports of the first output channel 15 and the second output channel 16 are merged into the same port. No matter the dielectric substrate integrated waveguide power divider 11 includes several output channels, the input ports of the output channels are the same and the output ports are different.
And a controller 12 for controlling the operation state of each output channel, for example, controlling each output channel to be in a conducting state or an isolating state. When the SPDT switch assembly works, the frequency bands of signals transmitted by different output channels are different. This constitutes an SPDT switch assembly that is capable of operating in the higher microwave frequency band, e.g., the millimeter wave frequency band.
In an embodiment, a first blocking groove 21 is disposed on the first output channel 15, a second blocking groove 22 is disposed on the second output channel 16, and both the first blocking groove 21 and the second blocking groove 22 are formed by penetrating through the metal layer on each output channel to a portion of the upper surface of the dielectric substrate integrated waveguide substrate 13. The first partition groove 21 and the second partition groove 22 occupy the whole length between two parallel metallized through holes of each output channel in the transverse dimension, and the longitudinal dimension is determined according to the signal frequency transmitted by each output channel, so that the signal transmitted on each output channel is cut off by the partition grooves and cannot be transmitted to the output port from the input port.
The controller 12 may include a switching element 23 and at least two metal patches, and the number of the metal patches included in the controller 12 is the same as the number of SIW channels of the dielectric substrate integrated waveguide power divider 11, and in this embodiment, the controller 12 includes a first metal patch 24 and a second metal patch 25. Each metal patch corresponds to one output channel, and each metal patch is positioned right above the corresponding output channel. Wherein the first metal patch 24 corresponds to the first output channel 15 and the second metal patch 25 corresponds to the second output channel 16. The first metal patch 24 and the second metal patch 25 are planes made of metal, and may be the same as or different from the metal layer covered on the upper surface of the dielectric substrate integrated waveguide power divider 11. Each metal patch is matched with the corresponding partition groove in size. That is, the shapes and sizes of the first metal patch 24 and the second metal patch 25 are the same as those of the corresponding first partition groove 21 and the corresponding second partition groove 22, respectively. The first metal patch 24 is located right above the first partition groove 21 but not in contact with the dielectric substrate integrated waveguide substrate 13 of the dielectric substrate integrated waveguide power divider 11, and the second metal patch 25 is located right above the second partition groove 22 and not in contact with the dielectric substrate integrated waveguide substrate 13 of the dielectric substrate integrated waveguide power divider 11.
And aiming at any output channel, when the metal patch is attached in the partition groove, the output channel is in a conducting state, otherwise, the output channel is in the partition state. Specifically, the switch element 23 is connected to the first metal patch 24 and the second metal patch 25, and the switch element 23 may control the first metal patch 24 and the second metal patch 25 to be placed in the corresponding partition groove or to be away from the corresponding partition groove according to a control instruction. The switching element 23 may be any other type of switching element, for example, an SPDT switch or other type of switch. The switch element 23 may control the positions of the first metal patch 24 and the second metal patch 25 according to a control instruction manually sent by a user, or may control the positions of the first metal patch 24 and the second metal patch 25 according to a control instruction sent by another control unit.
Specifically, when the switch element 23 controls the first metal patch 24 to be placed in the corresponding first partition groove 21, since the size of the first metal patch 24 is the same as that of the first partition groove, when the first metal patch 24 is placed in the corresponding first partition groove 21, which is equivalent to filling up the removed portion of the first output channel 15, the first output channel 15 will be able to become a complete SIW, and the signal input by the first port 18 will be able to be output from the second port 19. Similarly, when the second metal patch 25 is placed in the corresponding second blocking groove 22, which is equivalent to filling up the removed portion of the second output channel 16, the second output channel 16 will become a complete SIW, and the signal inputted from the first port 18 will be outputted from the third port 20. When the first metal patch 24 leaves the first blocking groove 21, the first output channel 15 is disconnected, and the signal input from the first port 18 cannot be output from the second port 19; when the second metal patch 25 leaves the second blocking groove 22, the second output channel 16 is disconnected, and the signal inputted from the second port 18 cannot be outputted from the third port 20.
Then the first metal patch 24 is placed in or out of the first partition groove 21, and the second metal patch 25 is placed in or out of the second partition groove 22 by sending a required control command to the control element 23, so that the first output channel 15 and the second output channel 16 are turned on or off, that is, the SPDT switch assembly provided in this embodiment can be used as a switch circuit or a power dividing circuit. When the control element 23 controls one of the first metal patch 24 or the second metal patch 25 to be placed in the first partition groove 21 or the second partition groove 22, only one of the first output channel 15 and the second output channel 16 is in a conducting state, and the SPDT switch assembly provided by this embodiment is equivalent to a switch circuit. When the control element 23 controls the first metal patch 24 and the second metal patch 25 to be simultaneously placed in the first partition groove 21 and the second partition groove 22, the SPDT switch assembly provided by this embodiment can work in a power division state.
In an embodiment, each of the output channels has a partition groove, and for the two output channels, when the frequency bands of the transmitted signals are different, the positions of the partition grooves in the two output channels are also different.
In one embodiment, the switch element 23 may be a physical switch, since the SPDT switch assembly provided in this embodiment is used for testing the microwave system, and the actual testing is often a flexible and fast switching control of the switch according to the requirement. Therefore, the physical switch is used as the switch element 23, the switch element 23 can be controlled at any time according to actual requirements, and a complex control logic does not need to be designed for the switch element 23, so that the test efficiency is improved conveniently.
Illustratively, when the SPDT switch assembly provided in this embodiment includes the first output channel 15 and the second output channel 16, the dielectric substrate integrated waveguide power divider 12 is a Y-type power divider, and when the SPDT switch assembly operates, the first output channel 15 is used to transmit signals in the 60GHz band, and the second output channel 16 is used to transmit signals in the 77GHz band. When a microwave system working at a 60GHz frequency band and a 77GHz frequency band is tested, the SPDT switch component is used as an SPDT switch, the first output channel port is respectively connected to the test circuit of the 60GHz frequency band, and the second output channel port is connected to the test circuit of the 77GHz frequency band, so that the test of two different working frequency bands of a signal source to be tested is realized.
Still taking the example that the SPDT switch assembly provided in this embodiment includes two output channels operating in the 60GHz band and the 77GHz band, when the SPDT switch assembly operates, that is, only one output channel is turned on at the same time, S parameters of the SPDT switch assembly are as shown in fig. 2, fig. 2 is an S parameter schematic diagram of the SPDT switch assembly provided in this embodiment operating in the switch state, where a curve S11, a curve S21, and a curve S31 are curves of the reflection parameter of the first port, the transmission parameter from the first port to the second port, and the transmission parameter from the first port to the third port, respectively. Wherein the first port, the second port and the third port correspond to the first port 18, the second port 19 and the third port 20 in the embodiment shown in fig. 1. As can be seen from the figure, the isolation is better than-30 dB and the transmission loss is better than 0.8dB at two frequency points of a 60GHz frequency band and a 77GHz frequency band.
The SPDT switch assembly provided in this embodiment is designed based on SIW, so that the SPDT switch assembly provided in this embodiment can operate in a higher microwave frequency band, for example, a millimeter wave frequency band. And because the on-off of the SIW channel is controlled by adopting a metal patch mode, the control structure is very simple, the device is suitable for being used in a design stage, the complexity of product testing of a microwave frequency band can be effectively reduced, and the testing efficiency is improved.
It should be noted that, in the SPDT switch assembly shown in fig. 1, the switch element may also be an element in an electrically controlled manner, for example, a PIN tube or a Micro Electro Mechanical System (MEMS) switch is loaded on the device, and the transmission and isolation of each SIW channel on the SIW circuit are controlled by controlling the PIN tube or the MEMS switch. Alternatively, the structure of the SPDT switch component provided in the embodiment of the present invention may also be implemented by a microstrip/stripline, or the like, that is, the SIW channel is changed into a microstrip circuit or a stripline circuit, and the SIW channel is changed into a microstrip channel or a stripline channel.
Fig. 3 is a schematic structural diagram of a power division switch system according to an embodiment of the present invention, and as shown in fig. 3, the power division switch system according to the embodiment includes a signal source 41, an SPDT switch component 42, and at least two signal processing links, where a first signal processing link 43 and a second signal processing link 44 are taken as an example in fig. 3. The signal source 41 can provide signals of at least one frequency band, and in the embodiment, the signal source 41 can provide two frequency bands of 60GHz and 77GHz for illustration. The output channels of the SPDT switch assembly 42 are connected at 60GHz and 77GHz signal processing links, respectively.
The switch of the signal source 41 is constructed as shown in fig. 1. Different output ports of the dielectric substrate integrated waveguide power divider 11 in the SPDT switch assembly 42 are respectively connected to signal processing links of different frequency bands. The number of output channels of the dielectric substrate integrated waveguide power divider 11 corresponds to the number of operating frequency bands of the signal processing link. The input port of the dielectric substrate integrated waveguide power divider 11 is connected with the signal source 41, so as to test the microwave system to be tested with multiple working frequency bands.
In an embodiment, the signal source 41 to be tested can provide signals of at least two frequency bands; when the signal provided by the signal source 41 is switched between different frequency bands, the SPDT switch component 42 serves as an SPDT switch to output a signal of one frequency band of the signals of the at least two frequency bands; the SPDT switch components have different frequency ranges of output signals and different output paths in a conducting state.
The power distribution switch system provided by the embodiment of the utility model can realize the test of the microwave system to be tested with a plurality of working frequency bands, and when the SPDT switch assembly 42 is used as a switch, the test of different frequency bands can be realized only by switching the controller 12 in the SPDT switch assembly 42. Of course, when testing different frequency bands, the operating frequency of the signal source to be tested needs to be switched to the required frequency band.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the utility model. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A single pole double throw SPDT switch assembly, comprising:
the dielectric substrate integrated waveguide power divider is provided with a shared input channel and at least two output channels; and
the controller is used for controlling each output channel to be in a conducting state or an isolating state;
and the frequency bands of the signals transmitted by different output channels are different.
2. The SPDT switch assembly according to claim 1, wherein the two output channels have cut-off grooves; and
the controller comprises a metal patch matched with the partition groove in size;
and aiming at any output channel, when the metal patch is attached in the partition groove, the output channel is in the conduction state, and a signal can be transmitted through the channel, otherwise, the output channel is in the partition state, and the signal cannot be transmitted through the channel.
3. The SPDT switch assembly according to claim 2, wherein each of said output passages has a partition groove formed therein;
when the SPDT switch assembly is used as an SPDT switch and the transmitted signal frequency is different, the positions of the separation grooves in any two output channels are different.
4. The SPDT switch assembly according to claim 2, wherein said dielectric substrate integrated waveguide power splitter comprises:
a dielectric substrate integrated waveguide substrate; and
the metal layer covers the upper surface of the dielectric substrate integrated waveguide substrate;
and the partition groove penetrates through the metal layer to reach the upper surface of the dielectric substrate integrated waveguide dielectric substrate.
5. The SPDT switch assembly according to claim 1, wherein said common input channel and each of said output channels are each defined by two metallized via strips, respectively;
the metallized through hole belt comprises a plurality of metallized through holes which are uniformly distributed.
6. The SPDT switch assembly according to claim 5, wherein one of the metalized via strips is shared between two adjacent output channels.
7. The SPDT switch assembly according to claim 5, wherein the metalized vias are the same shape and size.
8. The SPDT switch assembly according to any one of claims 1-7, wherein the dielectric substrate integrated waveguide power divider is a Y-type power divider;
when the SPDT works, one output channel is used for transmitting signals in a 60GHz frequency band, and the other output channel is used for transmitting signals in a 77GHz frequency band.
9. A power dividing switch system, comprising:
the signal source, namely the piece to be measured, can output the signal of at least one frequency channel;
at least two signal processing chains; and
the power dividing switch assembly of any of claims 1-8;
wherein each output channel of the SPDT switch assembly is connected with the signal processing link.
10. The power distribution switch system of claim 9, wherein the signal source, i.e. the device under test, is capable of providing signals of at least two frequency bands;
when the signal provided by the signal source works in a specific frequency band, the SPDT switch component conducts a certain channel; and
and if the frequency band of the input signal of the SPDT switch assembly is switched, the corresponding output path in the conducting state is correspondingly switched.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121665659.0U CN215869723U (en) | 2021-07-21 | 2021-07-21 | SPDT switch assembly and power distribution switch system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121665659.0U CN215869723U (en) | 2021-07-21 | 2021-07-21 | SPDT switch assembly and power distribution switch system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215869723U true CN215869723U (en) | 2022-02-18 |
Family
ID=80331124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121665659.0U Active CN215869723U (en) | 2021-07-21 | 2021-07-21 | SPDT switch assembly and power distribution switch system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215869723U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114865263A (en) * | 2022-06-08 | 2022-08-05 | 重庆邮电大学 | Millimeter wave filtering power divider with hollow substrate integrated waveguide |
-
2021
- 2021-07-21 CN CN202121665659.0U patent/CN215869723U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114865263A (en) * | 2022-06-08 | 2022-08-05 | 重庆邮电大学 | Millimeter wave filtering power divider with hollow substrate integrated waveguide |
| CN114865263B (en) * | 2022-06-08 | 2023-07-25 | 重庆邮电大学 | Hollow substrate integrated waveguide millimeter wave filtering power divider |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Cameron et al. | Design of manifold-coupled multiplexers | |
| EP1810363B1 (en) | Distributed matrix switch | |
| US9985331B2 (en) | Substrate integrated waveguide switch | |
| CN215869723U (en) | SPDT switch assembly and power distribution switch system | |
| US11705614B2 (en) | Coupling device and antenna | |
| CN113675551B (en) | Liquid crystal phase shifter and liquid crystal antenna | |
| WO2013026271A1 (en) | Phase shifting device | |
| US8754722B2 (en) | Planar integrated switching device | |
| RU2657336C1 (en) | Transceiving module of active phased antenna array | |
| US20200212566A1 (en) | Dual band beam generator | |
| Sieganschin et al. | A compact low-loss multilayer SIW diplexer at K/Ka-band | |
| CN112886172B (en) | Multi-path power divider with reconfigurable power dividing path number | |
| Ali et al. | Miniaturized grounded co-planar waveguide based x-band equal split Wilkinson power divider for aesa application | |
| EP1416574A1 (en) | Hybrid phase shifter and power divider | |
| US4075581A (en) | Stripline quadrature coupler | |
| Madany et al. | High-isolation wideband single-pole double-throw (SPDT) transmitter/receiver (T/R) switch with PIN diode for wireless communication applications | |
| US10615497B2 (en) | Splitter circuit and antenna | |
| CN112768858B (en) | Dielectric waveguide resonator and combiner comprising same | |
| CN114744384A (en) | Low-loss single-switch broadband microwave 180-degree phase shifter based on microstrip line structure | |
| Madany et al. | Analysis and design of microstrip array antenna using SPDT-T/R switch for MIMO antenna system applications | |
| US5966058A (en) | Aperture-coupled multiplanar magic-T junction | |
| EP2757631A1 (en) | Waveguide power combiner/splitter | |
| Setti et al. | Ku Band Waveguide Diplexer for Satellite Communication Links | |
| Madany et al. | Analysis and design of wideband single-pole double-throw (SPDT) transmitter/receiver (T/R) switch with PIN diode for transceiver systems | |
| CN214797682U (en) | Terahertz frequency band ultra wide band one-to-four power divider |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |