CN214797682U - Terahertz frequency band ultra wide band one-to-four power divider - Google Patents
Terahertz frequency band ultra wide band one-to-four power divider Download PDFInfo
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- CN214797682U CN214797682U CN202121393614.2U CN202121393614U CN214797682U CN 214797682 U CN214797682 U CN 214797682U CN 202121393614 U CN202121393614 U CN 202121393614U CN 214797682 U CN214797682 U CN 214797682U
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a terahertz frequency channel ultra wide band divides four merit into now. The utility model comprises a substrate, a metallized through hole, a medium substrate, a ground-signal-ground pin and a microstrip power divider; the output port of the first-stage one-to-two T-shaped junction power divider and the input port of the second-stage one-to-two T-shaped junction power divider in the microstrip power divider are on the same straight line, so that the distance between the ports is increased to the maximum extent, and the layout design of a subsequent circuit is facilitated; the metalized through holes are formed around the windowing of the ground metal of the ground-signal-ground pin, so that the effect of destroying the resonance between the terahertz monolithic circuit layers can be achieved, and the surface waves generated by low dielectric constants and the resonance in the resonant cavity formed by the substrate can be effectively inhibited; the utility model has good insertion loss and can effectively reduce energy loss; the ultra-wideband characteristic can meet the working requirement of a multi-band circuit; the method is suitable for the terahertz frequency band; a dielectric substrate suitable for low dielectric constant; has the advantages of simple design and easy manufacture.
Description
Technical Field
The utility model relates to a terahertz is integrated technical field now, concretely relates to terahertz frequency channel ultra wide band divides one into four merit to divide ware now.
Background
The terahertz frequency band is in a transition region from electronics to photonics, has a series of advantages of good transmission, strong directivity, wide frequency spectrum and the like, can cover characteristic spectrums of substances such as semiconductors, plasmas, organisms, biological macromolecules and the like, and is widely applied to various aspects such as next-generation communication, radar, biomedicine, industrial inspection, security inspection imaging, astronomical radio and environmental detection. With the rapid development of communication technology, the microwave spectrum resources of low frequency band are becoming more and more tense, and it is very important to explore millimeter waves and terahertz waves with higher frequency and wider bandwidth.
The power divider is a device for dividing one path of input signal energy into multiple paths of energy with equal or unequal outputs, and has been widely applied to microwave equipment such as multiple communication networks, phased array radars and the like. Currently, it is still a challenge to research a frequency source in the terahertz frequency band, and in order to obtain higher power output, a multi-path cascade method is usually adopted, which needs a good power divider to implement. The existing power divider has less research on terahertz frequency bands and basically does not meet the requirement of ultra wide band.
Disclosure of Invention
In order to effectively solve the problem that the ware was divided to terahertz frequency channel needs broadband multichannel cascade merit among the background art, the utility model provides a ware is divided to terahertz frequency channel ultra wide band one minute four merits, adopt on-chip microstrip structure, can directly link to each other with follow-up circuit.
The utility model discloses a terahertz frequency channel ultra wide band divides one into four merit to divide the ware includes: the microstrip power divider comprises a substrate, a metalized through hole, a dielectric substrate, a ground-signal-ground pin and a microstrip power divider; the substrate is made of semiconductors, a plurality of through holes penetrating through the upper surface and the lower surface of the substrate are formed in the substrate, conductive metal is plated on the side wall of each through hole to form metalized through holes, and the metalized through holes are grounded; arranging a medium substrate on a substrate; forming a ground-signal-ground pin and a microstrip power divider on the upper surface of the dielectric substrate; the ground-signal-ground pin comprises a signal pin and two ground pins, wherein the signal pin is positioned in the middle, and the two ground pins are respectively positioned on two sides of the signal pin; the signal pins comprise ground metal, pin substrates and upper metal, the ground metal is positioned on the upper surface of the medium substrate, the pin substrates with the same plane shape are formed on the ground metal, the upper metal is formed on the part of the pin substrates, windows are formed on the part of the ground metal to form a defected ground structure, and metallized through holes in the substrate are positioned around the windows; the microstrip power divider comprises a first one-to-two T-shaped power divider and two second one-to-two T-shaped power dividers, a signal pin is connected with an input port of the first one-to-two T-shaped power divider, and two output ports of the first one-to-two T-shaped power divider are respectively connected to input ports of the two second one-to-two T-shaped power dividers.
The thickness of the dielectric substrate of the utility model is only 1-8 μm, which is a technical key for realizing ultra-wideband, and the ground-signal-ground pin is positioned on the very thin dielectric substrate and is used for the input and output of the monolithic integrated circuit, thereby facilitating the on-chip test, the structure of the utility model is essentially equivalent to a section of very short coplanar waveguide, and the middle signal pin can also be used as a microstrip line; pins of the external probe are respectively and correspondingly connected to a ground-signal-ground pin, signals are transmitted to the microstrip power divider through the signal pins serving as microstrip lines, the signals are uniformly divided into two through the first-stage one-to-two T-shaped power divider, and then are divided into two through the two second-stage one-to-two T-shaped power dividers respectively, because the whole structure is symmetrical, the result of the average distribution of the signals by one to four is finally achieved, and the direct connection with a subsequent circuit is convenient to match; due to the process, part of the ground-signal-ground pin is windowed at the metal part of the stratum to form a defected ground structure, the transmission performance of the microstrip line depends on the integrity of the ground plane, and the windowing can cause leakage; the metalized through holes are formed among the terahertz monolithic circuit layers, so that the effect of destroying resonance among the terahertz monolithic circuit layers can be achieved, and surface waves generated by low dielectric constants and resonance in a resonant cavity formed by the substrate can be effectively inhibited.
The through hole on the substrate is in the shape of a cylinder or a circular truncated cone. The conductive metal on the sidewalls of the vias is gold, copper, and aluminum. The diameter of the metalized through hole is 30-100 μm, and the height is 80-150 μm. The number of the metallized through holes is 4-8.
The dielectric substrate is made of insulating materials; the thickness of the dielectric substrate is 1-8 μm.
The utility model discloses a terahertz frequency channel ultra wide band one minute four merit divides the ware to select uses microstrip line form mainly because the microstrip structure is convenient for directly integrate on the piece. Although the insertion loss of the microstrip power divider gathered in the prior art is slightly higher than that of the waveguide power divider, the waveguide power divider is in transitional connection with other terahertz modules after being packaged, and the design process is complex and the difficulty is increased in consideration of the fact that the waveguide cannot be directly integrated on a chip.
The utility model discloses an output port that ware was divided to first order one minute two T type knot merit and the input port microstrip line that ware was divided to second level one minute two T type knot merit are on same straight line, furthest's increase the distance between each port, make things convenient for the domain design of follow-up circuit. The width is made as small as possible while the length of the power divider is increased, the miniaturization of the circuit is realized, and the on-chip integration is facilitated. In the design process, the performance of the power divider needs to be optimized, so that all variables of each part can change at any time, and all the variables are related and mutually restricted.
The utility model has the advantages that:
the utility model comprises a substrate, a metallized through hole, a medium substrate, a ground-signal-ground pin and a microstrip power divider; the output port of the first-stage one-to-two T-shaped junction power divider and the input port of the second-stage one-to-two T-shaped junction power divider in the microstrip power divider are on the same straight line, so that the distance between the ports is increased to the maximum extent, and the layout design of a subsequent circuit is facilitated; the metalized through holes are formed around the windowing of the ground metal of the ground-signal-ground pin, so that the effect of destroying the resonance between the terahertz monolithic circuit layers can be achieved, and the surface waves generated by low dielectric constants and the resonance in the resonant cavity formed by the substrate can be effectively inhibited; the utility model has good insertion loss and can effectively reduce energy loss; the ultra-wideband characteristic can meet the working requirement of a multi-band circuit; the method is suitable for the terahertz frequency band; a dielectric substrate suitable for low dielectric constant; has the advantages of simple design and easy manufacture.
Drawings
Fig. 1 is a schematic diagram of an embodiment of the terahertz frequency band ultra-wideband one-to-four power divider of the present invention;
fig. 2 is a top view of an embodiment of the terahertz frequency band ultra wide band one-to-four power divider of the present invention.
Detailed Description
The invention will be further elucidated by means of specific embodiments in the following with reference to the drawings.
As shown in fig. 1 and 2, the present embodiment includes: the terahertz frequency band ultra wide band one-to-four power divider comprises: the micro-strip power divider comprises a substrate, a metalized through hole 1, a dielectric substrate 2, a ground-signal-ground pin (GSG PAD)3 and a micro-strip power divider 4; the substrate is made of semiconductors, a plurality of through holes penetrating through the upper surface and the lower surface of the substrate are formed in the substrate, the central axes of the through holes are perpendicular to the surface of the substrate, conductive metal is plated on the side wall of each through hole to form metalized through holes 1, and the metalized through holes 1 are grounded; arranging a dielectric substrate 2 on a substrate; forming a ground-signal-ground pin 3 and a microstrip power divider 4 on the upper surface of the dielectric substrate 2; the ground-signal-ground pin 3 comprises a signal pin 3-2 and two ground pins 3-1, wherein the signal pin 3-2 is positioned in the middle, and the two ground pins 3-1 are respectively positioned at two sides of the signal pin 3-2; the signal pins 3-2 comprise ground metal, a pin substrate and upper metal, the ground metal is positioned on the upper surface of the medium substrate 2, the pin substrate with the same plane shape is formed on the ground metal, the upper metal is formed on the part of the pin substrate, windowing is performed on the part of the ground metal to form a defected ground structure, and five metalized through holes 1 in the substrate are uniformly positioned around the windowing; the microstrip power divider 4 comprises a first one-to-two T-shaped power divider 4-1 and two second one-to-two T-shaped power dividers 4-2, a signal pin 3-2 is connected with an input port of the first one-to-two T-shaped power divider 4-1, and two output ports of the first one-to-two T-shaped power divider 4-1 are respectively connected with input ports of the two second one-to-two T-shaped power dividers 4-2.
In this embodiment, the through hole on the substrate is in the shape of a truncated cone, the diameter of the upper bottom of the metalized through hole 1 is 40 μm, the diameter of the lower bottom is 80 μm, the height is 100 μm, and the substrate is made of indium phosphide; the dielectric substrate 2 adopts benzocyclobutene BCB with low dielectric constant; the dielectric substrate 2 has a thickness of 5 μm. The width is as small as possible while the length of the power divider is increased, the miniaturization of a circuit is realized, and the on-chip integration is facilitated; in the design process, the performance of the power divider needs to be optimized, so that variables of each part can be changed at any time, the variables are related and restricted, and finally four output ports of the second-stage one-to-two T-shaped junction power divider 4-2 are all microstrip lines, the width of each microstrip line is 12 micrometers, the characteristic impedance is 50 ohms, the four output ports can be directly connected with a subsequent circuit without extra impedance matching, and the interval between the ports is 240 micrometers.
Finally, optimizing a one-to-four power divider in simulation software to obtain the structural form given in the figure 1, wherein the insertion loss is about-7 dB in S21 in the ultra-wideband range of 280 GHz-400 GHz, and the value is the result including GSG Pad, and the result is better if the GSG Pad is not added. Compared with the ideal case, the insertion loss of-7 dB can be accepted by-6 dB, and no resonance is realized in the range of 280 GHz-400 GHz. Considering the simple and not easy realizability of high frequency resistance of technology, the utility model discloses well T type knot power divider does not select to add the Wilkinson power divider of isolation resistance, and the final isolation simulation result to each port is less than-10 dB in 280GHz ~ 400GHz within range.
Finally, it is noted that the disclosed embodiments are intended to aid in further understanding of the invention, but will be understood by those skilled in the art that: various substitutions and modifications are possible without departing from the spirit and scope of the present invention and the appended claims. Therefore, the present invention should not be limited to the embodiments disclosed, and the scope of the present invention is defined by the appended claims.
Claims (7)
1. The utility model provides a terahertz frequency band ultra wide band one divides four merit to divide ware which characterized in that, terahertz frequency band ultra wide band one divides four merit to divide the ware includes: the microstrip power divider comprises a substrate, a metalized through hole, a dielectric substrate, a ground-signal-ground pin and a microstrip power divider; the substrate is made of semiconductors, a plurality of through holes penetrating through the upper surface and the lower surface of the substrate are formed in the substrate, conductive metal is plated on the side wall of each through hole to form metalized through holes, and the metalized through holes are grounded; arranging a medium substrate on a substrate; forming a ground-signal-ground pin and a microstrip power divider on the upper surface of the dielectric substrate; the ground-signal-ground pin comprises a signal pin and two ground pins, wherein the signal pin is positioned in the middle, and the two ground pins are respectively positioned on two sides of the signal pin; the signal pins comprise ground metal, pin substrates and upper metal, the ground metal is positioned on the upper surface of the medium substrate, the pin substrates with the same plane shape are formed on the ground metal, the upper metal is formed on the part of the pin substrates, windows are formed on the part of the ground metal to form a defected ground structure, and metallized through holes in the substrate are positioned around the windows; the microstrip power divider comprises a first one-to-two T-shaped power divider and two second one-to-two T-shaped power dividers, a signal pin is connected with an input port of the first one-to-two T-shaped power divider, and two output ports of the first one-to-two T-shaped power divider are respectively connected to input ports of the two second one-to-two T-shaped power dividers.
2. The terahertz frequency band ultra-wideband one-to-four power divider as claimed in claim 1, wherein the through hole on the substrate is in the shape of a cylinder or a truncated cone.
3. The terahertz frequency band ultra-wideband one-to-four power divider as claimed in claim 1, wherein the conductive metal on the sidewall of the through hole is gold, copper and aluminum.
4. The terahertz frequency band ultra-wideband one-to-four power divider as claimed in claim 1, wherein the diameter of the metalized through hole is 30-100 μm, and the height is 80-150 μm.
5. The terahertz frequency band ultra-wideband one-to-four power divider as claimed in claim 1, wherein the number of the metalized through holes is 4-8.
6. The terahertz frequency band ultra-wideband one-to-four power divider as claimed in claim 1, wherein the dielectric substrate is made of an insulating material.
7. The terahertz frequency band ultra-wideband one-to-four power divider as claimed in claim 1, wherein the thickness of the dielectric substrate is 1-8 μm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121393614.2U CN214797682U (en) | 2021-06-22 | 2021-06-22 | Terahertz frequency band ultra wide band one-to-four power divider |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121393614.2U CN214797682U (en) | 2021-06-22 | 2021-06-22 | Terahertz frequency band ultra wide band one-to-four power divider |
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| CN214797682U true CN214797682U (en) | 2021-11-19 |
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| CN202121393614.2U Expired - Fee Related CN214797682U (en) | 2021-06-22 | 2021-06-22 | Terahertz frequency band ultra wide band one-to-four power divider |
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- 2021-06-22 CN CN202121393614.2U patent/CN214797682U/en not_active Expired - Fee Related
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Granted publication date: 20211119 |