CN112103608B - Power divider and power combiner with high isolation - Google Patents
Power divider and power combiner with high isolation Download PDFInfo
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- CN112103608B CN112103608B CN202011047746.XA CN202011047746A CN112103608B CN 112103608 B CN112103608 B CN 112103608B CN 202011047746 A CN202011047746 A CN 202011047746A CN 112103608 B CN112103608 B CN 112103608B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
Abstract
The application belongs to the technical field of radio frequency microwave, and particularly relates to a power divider and combiner with high isolation. The power dividing and combining device comprises a waveguide cavity body and a power dividing and combining device, wherein the waveguide cavity body comprises a first end and a second end which are opposite, the first end is provided with a waveguide port for power input or power output, the second end is closed by a conductive shell to form a waveguide short-circuit surface, a window is arranged above the waveguide cavity body adjacent to the waveguide short-circuit surface, and the waveguide cavity body is coupled with a microstrip circuit through the window; the microstrip circuit comprises a substrate, wherein two microstrip lines are arranged on the upper end face of the substrate, and the lower end face of the substrate comprises a joint part which is used for covering the window of the waveguide cavity; and the waveguide filling medium is filled at the window of the waveguide cavity and is used for connecting the substrate of the microstrip circuit with the waveguide ridge of the waveguide cavity. The structure directly realizes power distribution/synthesis while waveguide microstrip conversion, realizes good isolation, has more compact structure, and is beneficial to the miniaturization design of a system.
Description
Technical Field
The application belongs to the technical field of radio frequency microwave, and particularly relates to a power divider and combiner with high isolation.
Background
In microwave and millimeter waves, microstrip lines are an important transmission form in microwave integrated circuits, however, at present, rectangular waveguides are used for interfaces of many microwave and millimeter wave test systems and devices, and therefore, waveguide-microstrip converters are widely applied to detection of microwave and millimeter wave monolithic integrated circuits and hybrid circuits and connection of waveguides and planar circuits, so that good matching transition between two transmission lines is achieved. The waveguide-microstrip transition technology becomes one of the key technologies for system implementation, and is widely researched. The common waveguide-microstrip transition technology mainly comprises probe transition, ridge waveguide transition, fin line transition and the like; microwave power combiners are important passive devices in modern microwave communication systems, radar systems, electronic countermeasure systems and the like, and occupy a considerable position in the whole microwave system. Its function is to transmit multiple power paths to one path for power superposition. Such devices are often used for power combining in high power systems. At present, common microwave power synthesizers are mainly divided into a planar microstrip line structure, a SIW structure, a coaxial structure, a cavity structure and the like, and the characteristics of high power capacity and small insertion loss of the power synthesizers based on the waveguide structure are widely concerned by microwave workers, so that a power distribution technology adopting the waveguide structure is one of valuable research subjects in the technical field of microwave and millimeter wave, in a power synthesis circuit, an MMIC chip is usually adopted for power amplification, and the MMIC chip is required to be connected with the microstrip line in a matching way, so that signals are required to be transited to the corresponding microstrip line from a waveguide, the commonly used double-probe transition from the waveguide to the microstrip at present meets the conversion of the waveguide microstrip, and the power synthesis is realized, but the isolation degree between output ports is poor, and the isolation of two paths is only 6dB theoretically. When the power combiner is used as a power combiner, under the condition that one input port is mismatched or the input ports are seriously unbalanced, the mutual large influence can be caused, and the stability of the system is reduced; although the common ridge waveguide transition has good transition performance like the probe transition, the transition of the waveguide micro-strip cannot be satisfied like the double-probe transition, and the power synthesis is realized.
Disclosure of Invention
Aiming at the defects that the isolation between the ports of the double-probe transition power combiner is poor, the stability of a system is influenced when the double-probe transition power combiner is used for power synthesis, and the power synthesis is not easily realized in the transition of common ridge waveguide, the power distribution/synthesis is realized while the transition from waveguide to microstrip is realized by adopting a coupling transition mode from ridge waveguide to double microstrip lines, and an isolation resistor is introduced between the double microstrip lines, so that the isolation between the sub-ports of the two microstrip lines is realized, and the standing wave performance of the sub-ports is improved.
This application power divider of high isolation divides power to close ware mainly includes:
the waveguide cavity comprises a first end and a second end which are opposite, the first end is provided with a waveguide port for power input or output, the second end is closed by a conductive shell, the conductive shell forms a waveguide short-circuit surface, a window is arranged above the waveguide cavity adjacent to the waveguide short-circuit surface, the waveguide cavity is coupled with the microstrip circuit through the window, and a waveguide ridge is arranged in the waveguide cavity;
the microstrip circuit comprises a substrate, wherein two microstrip lines are arranged on the upper end face of the substrate, the lower end face of the substrate comprises a joint part used for covering a window of the waveguide cavity and metal plate parts arranged on two sides of the joint part, the metal plate positioned on the inner side extends to the upper end face of the substrate through a grounding through hole arranged on the substrate and is electrically connected with the microstrip lines, the metal plate positioned on the outer side is connected with the waveguide short-circuit surface, and the outer side is close to one side of the output end of the microstrip circuit;
and the waveguide filling medium is filled at the window of the waveguide cavity and is used for connecting the substrate of the microstrip circuit with the waveguide ridge of the waveguide cavity.
Preferably, the waveguide ridge is disposed between the waveguide port and the window of the waveguide cavity, and gradually rises from the waveguide port to the window in a stepped manner.
Preferably, the substrate has a dielectric constant that is the same as the dielectric constant of the waveguide fill medium.
Preferably, the two microstrip lines are connected across an isolation resistor at the output end.
Preferably, the two microstrip lines are arranged in parallel above the window of the waveguide cavity.
Preferably, the output ends of the two microstrip lines extend in opposite directions to form a first microstrip port and a second microstrip port respectively.
Preferably, when the first microstrip port and the second microstrip port are input ports, the waveguide port at the first end of the waveguide cavity is an output end of the power combiner.
Preferably, when the waveguide port at the first end of the waveguide cavity is an input end, the first microstrip port and the second microstrip port are power division output ends.
Compared with the prior art, the invention has the beneficial effects that:
(1) compared with the common ridge waveguide transition method, the method not only completes the transition from the waveguide to the microstrip, but also realizes the distribution/synthesis of two paths of power; compared with the double-probe transition from the common waveguide to the microstrip, the double-probe transition not only meets the conversion and power distribution/synthesis of the waveguide microstrip, but also is easy to realize the isolation among all the paths and the improvement of port standing waves, is convenient for the connection among modules and the system integration, and reduces the instability brought to the system by the imbalance among the paths and even the damage of one path during the integration of a multi-path system.
(2) The structure directly realizes power distribution/synthesis while waveguide microstrip conversion, realizes good isolation, and is more compact in structure and beneficial to miniaturization design of a system compared with a design of a microstrip power combiner with good isolation performance and a design of a waveguide microstrip converter for cascade connection.
(3) The transition between the microstrip circuit and the waveguide cavity is realized by coupling instead of connection, the defects of poor consistency of conventional ridge waveguide microstrip transition welding and the like are avoided, in addition, the waveguide window is covered by the dielectric substrate, and the sealing of the cavity is easy to realize compared with the conventional ridge waveguide microstrip transition.
Drawings
Fig. 1 is a perspective view of a preferred embodiment of the power splitting and combining device with high isolation according to the present application.
Fig. 2 is a front view of the embodiment of fig. 1 of the present application.
Fig. 3 is a top view of the embodiment of fig. 1 of the present application.
Fig. 4 is a schematic structural diagram of a top view waveguide cavity and a microstrip circuit at a window coupling position according to the embodiment shown in fig. 1.
The waveguide structure comprises a waveguide cavity 1, a waveguide port 11, a waveguide port 12, a window 13, a waveguide short-circuit surface 2, a waveguide ridge 3, a microstrip line 31, a first microstrip port 32, a second microstrip port 32, a substrate 4, a junction part 41, a metal plate part 42, a grounding via hole 43, a waveguide filling medium 5 and an isolation resistor 6.
Detailed Description
In order to make the implementation objects, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described in more detail below with reference to the accompanying drawings in the embodiments of the present application. In the drawings, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The described embodiments are some, but not all embodiments of the present application. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application, and should not be construed as limiting the present application. All other embodiments obtained by a person of ordinary skill in the art without any inventive work based on the embodiments in the present application are within the scope of protection of the present application. Embodiments of the present application will be described in detail below with reference to the drawings.
The application provides a power divider/combiner with high isolation, as shown in fig. 1 to 4, which mainly includes:
the waveguide cavity comprises a waveguide cavity 1 and a waveguide ridge 2, wherein the waveguide cavity 1 comprises a first end and a second end which are opposite, the first end is provided with a waveguide port 11 for power input or power output, the second end is closed by a conductive shell, the conductive shell forms a waveguide short-circuit surface 13, a window 12 is arranged above the waveguide cavity 1 adjacent to the waveguide short-circuit surface 11, the waveguide cavity 1 is coupled with a microstrip circuit through the window 12;
the microstrip circuit comprises a substrate 4, wherein two microstrip lines 3 are arranged on the upper end face of the substrate 4, the lower end face of the substrate comprises a joint part 41 used for covering the window 12 of the waveguide cavity 1 and metal plate parts 42 arranged on two sides of the joint part, the metal plate positioned on the inner side extends to the upper end face of the substrate through a grounding through hole 43 arranged on the substrate and is electrically connected with the microstrip lines 3, the metal plate positioned on the outer side is connected with the waveguide short-circuit surface 13, and the outer side is one side close to the output end of the microstrip circuit;
and the waveguide filling medium 5 is filled in the window 12 of the waveguide cavity 1 and is used for connecting the substrate of the microstrip circuit with the waveguide ridge 2 of the waveguide cavity 1.
In the application, one end of a waveguide cavity 1 is a standard waveguide, the other end of the waveguide cavity is short-circuited, and a plurality of waveguide ridges 2 with different ridge heights are processed near the waveguide short-circuited surface in the cavity, so that the standard waveguide impedance is converted into low impedance close to a microstrip line. And (3) windowing the wide edge of the waveguide above the last ridge waveguide, and placing a waveguide filling medium on the ridge waveguide, wherein the length of the windowing is equal to the length of the filling medium and the length of the last ridge waveguide, and is about a quarter wavelength (calculated according to the dielectric constant of the filling medium).
A microstrip circuit board is placed on the waveguide, two microstrip lines are arranged on the front side, a microstrip plane on the back side is in close and good contact with the waveguide shell, a microstrip plane horizontal plane window is reserved and is positioned above the last section of ridge waveguide and is the same as the waveguide window, one section of double parallel lines of the microstrip line on the front side is positioned above the window, the two microstrip lines are parallel to the tail section of waveguide ridge and are equal in distance, so that a coupling section is formed to realize equal-amplitude coupling transition from ridge waveguide to two microstrip lines, the dielectric constant of the microstrip board dielectric substrate is the same as that of a waveguide filling medium, and the length of the coupling section of the microstrip line is equal to that of the tail section of ridge waveguide. One end of the microstrip line coupling section is short-circuited with the ground plane through the microstrip grounding via hole, the other end of the microstrip line coupling section is output by a strip line with 50-ohm impedance, an isolation resistor is bridged between the two paths of microstrip lines at the output end of the coupling section for improving the isolation between the two paths of microstrip outputs, and the resistance value of the resistor is about 100 ohms.
When a signal is input from the waveguide port 11, the signal is reflected on the waveguide short-circuit surface, coupled to the microstrip line through the waveguide window, and output from two ports of the microstrip line, which is a power divider.
When the microstrip line coupler is used as a power combiner, two ports of the microstrip line are respectively connected with two paths of microstrip circuit amplifiers, the phases of the two paths of amplifiers are required to be in the same phase, the two paths of amplifiers are coupled and transited to the ridge waveguide, and the output is output through the waveguide port 11 after power combination.
In some alternative embodiments, the waveguide ridge 2 is disposed between the waveguide port 11 and the window 12 of the waveguide cavity 1, and gradually rises in a stepped manner from the waveguide port 11 to the window 12.
In some alternative embodiments, the substrate has a dielectric constant that is the same as the dielectric constant of the waveguide fill medium.
In some alternative embodiments, the two microstrip lines are connected across an isolation resistor 6 at the output.
In some alternative embodiments, the two microstrip lines 3 are arranged parallel to each other above the window 12 of the waveguide cavity 1. A section of parallel double lines of the microstrip line 3 and the tail section of the waveguide ridge 2 form an upper coupling section and a lower coupling section through a substrate at the window 12 to realize signal transmission transition. When signals are transmitted from the waveguide port 11 to the first microstrip port 31 and the second microstrip port 32, the signals are averagely coupled to two parallel microstrip lines with the same distance through ridge waveguides, so that equal-amplitude and in-phase distribution of power is realized, and power synthesis can be realized through reverse transmission.
In some alternative embodiments, the output ends of the two microstrip lines 3 extend in opposite directions to form a first microstrip port 31 and a second microstrip port 32, respectively.
In some alternative embodiments, when the first microstrip port 31 and the second microstrip port 32 are input ports, the waveguide port 11 at the first end of the waveguide cavity 1 is an output end of the coupler.
In some optional embodiments, when the waveguide port 11 at the first end of the waveguide cavity 1 is an input end, the first microstrip port 31 and the second microstrip port 32 are power division output ends.
The method comprises the steps of firstly arranging a plurality of ridges with different ridge heights on the wide edge of a standard waveguide to realize the impedance transformation from the standard waveguide to the ridge waveguide, transforming the impedance of the standard waveguide with hundreds of ohms into the impedance close to a microstrip line, short-circuiting the tail end of the ridge waveguide, opening a coupling window on the wide edge of the waveguide above the last ridge of the ridge waveguide, placing a dielectric substrate above the ridge within the window range, then placing a microstrip plate above a waveguide cavity, wherein the microstrip line is positioned above the waveguide ridge and is parallel to the ridge, the microstrip plate is also opened corresponding to the ground plane, so that the microstrip line and the waveguide ridge are coupled through the opening window, one end of the coupling microstrip line is also short-circuited and is opposite to the short-circuited direction of the ridge waveguide, the waveguide ridge and the microstrip line form a quarter-wavelength coupling joint, one end of each coupling line is short-circuited, and analysis is carried out according to the similarity of electric fields of the single ridge waveguide and the microstrip line, the upper and lower waveguide ridges and microstrip lines can be regarded as a group of double-sided parallel strip lines, and the middle ground plane is windowed, so that a section of coupling strip line is formed, and therefore the coupling transition from ridge waveguide to microstrip can be realized. If the microstrip lines in the coupling section are changed into the double microstrip lines which are parallel to each other and are symmetrically distributed on two sides above the ridge, double-path in-phase equal-amplitude power division from the ridge waveguide to the microstrip is realized, and then an isolation resistor is arranged between the two paths at the output end of the microstrip lines of the coupling section, so that the isolation degree between the two paths of microstrip ports is increased, the standing wave performance of the microstrip ports is improved, and the high-isolation power division/power combination is realized.
Simulation results show that the structure realizes in-phase power division and has better isolation performance and port standing wave performance.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (8)
1. A high-isolation power divider/combiner is characterized by comprising:
the waveguide cavity comprises a waveguide cavity body (1) and a waveguide ridge (2), wherein the waveguide cavity body comprises a first end and a second end which are opposite, the first end is provided with a waveguide port (11) used for power input or power output, the second end is closed by a conductive shell, the conductive shell forms a waveguide short-circuit surface (13), a window (12) is arranged above the waveguide cavity body (1) adjacent to the waveguide short-circuit surface (13), the waveguide cavity body (1) is coupled with a microstrip circuit through the window (12), and the waveguide cavity body (1) is internally provided with the waveguide ridge (2);
the microstrip circuit comprises a substrate (4), wherein two microstrip lines (3) are arranged on the upper end face of the substrate (4), the lower end face of the substrate comprises a joint part (41) which is used for covering the window (12) of the waveguide cavity (1), and metal plate parts (42) arranged on two sides of the joint part, the metal plate positioned on the inner side extends to the upper end face of the substrate through a grounding via hole (43) arranged on the substrate and is electrically connected with the microstrip lines (3), the metal plate positioned on the outer side is connected with the waveguide short-circuit surface (13), and the outer side is close to one side of the output end of the microstrip circuit;
and the waveguide filling medium (5) is filled at the window (12) of the waveguide cavity (1) and is used for connecting the substrate of the microstrip circuit with the waveguide ridge (2) of the waveguide cavity (1).
2. The high-isolation power divider/combiner according to claim 1, wherein the waveguide ridge (2) is disposed between the waveguide port (11) and the window (12) of the waveguide cavity (1), and gradually rises in a stepped manner from the waveguide port (11) to the window (12).
3. The high isolation power divider/combiner of claim 1, wherein the substrate has a dielectric constant that is the same as a dielectric constant of the waveguide fill medium.
4. The power divider/combiner with high isolation in claim 1, wherein the two microstrip lines (3) are connected across an isolation resistor (6) at the output end.
5. The high-isolation power divider/combiner according to claim 1, wherein two microstrip lines (3) are arranged in parallel above the window (12) of the waveguide cavity (1).
6. The power divider/combiner with high isolation according to claim 1, wherein the output ends of the two microstrip lines (3) extend in opposite directions to form a first microstrip port (31) and a second microstrip port (32), respectively.
7. The high-isolation power divider/combiner according to claim 6, wherein when the first microstrip port (31) and the second microstrip port (32) are input ports, the waveguide port (11) at the first end of the waveguide cavity (1) is an output end of the power divider/combiner.
8. The high-isolation power divider/combiner according to claim 6, wherein when the waveguide port (11) at the first end of the waveguide cavity (1) is an input end, the first microstrip port (31) and the second microstrip port (32) are power divider/output ends.
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Families Citing this family (3)
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| CN113078882A (en) * | 2021-03-31 | 2021-07-06 | 绵阳天赫微波科技有限公司 | 18-40GHz power amplifier module |
| CN113258244B (en) * | 2021-04-30 | 2021-12-07 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Rectangular waveguide microstrip 0-degree-phase-difference high-isolation broadband power divider |
| CN115378379B (en) * | 2022-10-20 | 2023-03-28 | 南京正銮电子科技有限公司 | Power amplifier based on SIW |
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