CN215834514U

CN215834514U - High-efficiency power MOS field effect transistor

Info

Publication number: CN215834514U
Application number: CN202121180634.1U
Authority: CN
Inventors: 钟惠生; 李冰
Original assignee: Guangdong Lihong Microelectronics Co ltd
Current assignee: Guangdong Lihong Microelectronics Co ltd
Priority date: 2021-05-31
Filing date: 2021-05-31
Publication date: 2022-02-15
Anticipated expiration: 2031-05-31

Abstract

The utility model discloses a high-efficiency power MOS field effect transistor, which comprises a main body, a connecting component and a tube body component, wherein the main body comprises: the heat dissipation structure comprises a substrate, wherein heat dissipation fins are fixed on two sides of the substrate; a conduction indicator lamp installed outside the substrate; an opto-isolator mounted inside the substrate; a connection assembly fixed to an upper side of the main body; a pipe assembly installed below the main body; the body subassembly includes: the transistor, the outer wall of the said transistor is fixed with the anti-oxidation coating; and the convex strip is fixed on the outer wall of the transistor. This high-efficient power MOS field effect transistor can be anti-oxidation, and the heat radiation fin at substrate both sides can play radiating effect, can consolidate the protection to this MOS field effect transistor's transistor through setting up external location gum cover and flexible insulating cover, plays and prevents cracked effect, and the setting of sand grip is convenient for the compactness of being connected with grafting department when the transistor uses, prevents to connect the pine and takes off.

Description

High-efficiency power MOS field effect transistor

Technical Field

The utility model relates to the technical field of MOS field effect transistors, in particular to a high-efficiency power MOS field effect transistor.

Background

MOS transistor, is an abbreviation of MOSFET, and its original meaning is: MOS (Metal Oxide Semiconductor), that is, a field effect transistor in which a gate of a Metal layer (M) controls a Semiconductor (S) through an Oxide layer (O) by the effect of an electric field. Power MOS field effect transistors are also classified into junction type and insulated gate type, but generally refer to MOS type (Metal Oxide Semiconductor FET) among insulated gate type, which is called power mosfet (power mosfet) for short.

The MOS field effect transistor in the market does not have a radiating structure, the service life of the MOS field effect transistor is easily influenced by overhigh temperature, and the transistor of the MOS field effect transistor is easily oxidized, so that the high-efficiency power MOS field effect transistor is provided.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a high-efficiency power MOS field effect transistor to solve the problems that the MOS field effect transistor on the market proposed in the background technology does not have a heat dissipation structure, the service life of the MOS field effect transistor is easily influenced by overhigh temperature, and the transistor of the MOS field effect transistor is easily oxidized.

In order to achieve the purpose, the utility model provides the following technical scheme: high-efficiency power MOS field effect transistor, comprising:

a main body;

the main body comprises:

the heat dissipation structure comprises a substrate, wherein heat dissipation fins are fixed on two sides of the substrate;

a conduction indicator lamp installed outside the substrate;

an opto-isolator mounted inside the substrate;

a connection assembly fixed to an upper side of the main body;

a pipe assembly installed below the main body;

the body subassembly includes:

the transistor, the outer wall of the said transistor is fixed with the anti-oxidation coating;

and the convex strip is fixed on the outer wall of the transistor.

Preferably, the connecting assembly comprises:

the connecting plate, the inside of connecting plate is seted up the connecting hole, and is fixed connection between connecting plate and the substrate.

Preferably, the connection assembly further comprises:

the outer guard plate is fixed above the connecting plate;

and the clamping and embedding grooves are arranged on two sides of the outer guard plate.

Preferably, the outer guard plate and the connecting plate are of an integrated structure, and the clamping grooves on the two sides of the outer guard plate are symmetrically distributed.

Preferably, the pipe body assembly further comprises:

the positioning rubber sleeve is arranged on the outer side above the transistor;

and the flexible insulating sleeve is fixed on the inner side of the positioning rubber sleeve, and the inner side surface of the flexible insulating sleeve is attached to the outer side surface of the transistor.

Preferably, the transistor is fixedly connected with the substrate, convex strips are symmetrically distributed on the outer wall of the transistor, and the convex strips are of arc-shaped convex structures.

Preferably, the number of the flexible insulating sleeves is three, the flexible insulating sleeves are of an annular hollow structure, and the flexible insulating sleeves and the positioning rubber sleeve are of an integrated structure.

The utility model provides a high-efficiency power MOS field effect transistor, which has the following beneficial effects: the high-efficiency power MOS field effect transistor can be prevented from being oxidized, the radiating fins on the two sides of the substrate can play a role in heat radiation, and the transistor of the MOS field effect transistor can be reinforced and protected by arranging the external positioning rubber sleeve and the flexible insulating sleeve, so that the effect of preventing breakage is achieved.

1. The MOS field effect transistor is provided with the main body, wherein the radiating fins on the two sides of the substrate can play a role in radiating, the influence on the service life of the MOS field effect transistor due to high temperature is avoided, the turn-on indicator lamp can light up to play a role in prompting under the condition that a circuit is switched on, and meanwhile, the built-in high-level and low-level signal optical coupling isolation can support high-level triggering and low-level triggering, so that the MOS field effect transistor has high efficiency.

2. The MOS field effect transistor is provided with the connecting component, so that the MOS field effect transistor can be connected and installed conveniently, the connecting plate is fixedly connected with the substrate, the connecting hole in the connecting plate can be positioned and fixed through the positioning pin, the outer guard plate can protect the connecting plate, and the clamping grooves in the two sides of the outer guard plate can be clamped and connected with the corresponding clamping blocks in the installation position.

3. The transistor is provided with the tube body assembly, the integrated positioning rubber sleeve and the flexible insulating sleeve can be sleeved on the upper side of the transistor from bottom to top, so that the connecting position of the transistor and the top end of the substrate is reinforced and protected conveniently, the connecting part is prevented from being broken, the flexible insulating sleeve is made of flexible materials and can play a role in flexible protection, meanwhile, the transistor has an insulating effect, the anti-oxidation layer on the outer wall of the transistor can prolong the service life of the transistor, the convex strips in the arc-shaped convex structure are arranged to facilitate the tightness of the connection between the transistor and the inserting part when the transistor is used, and the connection is prevented from loosening.

Drawings

FIG. 1 is a schematic diagram of a front view external structure of a high-efficiency power MOS FET of the present invention;

FIG. 2 is a schematic diagram of the front view internal structure of the high-efficiency power MOS FET of the present invention;

fig. 3 is a schematic bottom view of the body assembly of the high-efficiency power MOS fet of the present invention.

In the figure: 1. a main body; 101. a substrate; 102. heat dissipation fins; 103. turning on an indicator light; 104. optical coupling isolation; 2. a connecting assembly; 201. a connecting plate; 202. connecting holes; 203. an outer shroud; 204. a clamping groove; 3. a tube body assembly; 301. a transistor; 302. an oxidation-resistant layer; 303. a convex strip; 304. positioning a rubber sleeve; 305. a flexible insulating sleeve.

Detailed Description

As shown in fig. 1, the high-efficiency power MOS fet includes: a main body 1; the main body 1 includes: a substrate 101, wherein heat dissipation fins 102 are fixed on both sides of the substrate 101; a conduction indicator lamp 103 mounted on the outer side of the substrate 101; a light-coupling isolator 104 mounted inside the substrate 101; a connection assembly 2 fixed to an upper side of the main body 1; the connecting assembly 2 includes: a connecting hole 202 is formed in the connecting plate 201, the connecting plate 201 is fixedly connected with the substrate 101, and the connecting hole 202 in the connecting plate 201 can be positioned and fixed through a positioning pin; the connecting assembly 2 further comprises: an outer guard 203 fixed above the connection plate 201; and a clamping groove 204 disposed at both sides of the outer guard plate 203. The outer guard plate 203 and the connecting plate 201 are of an integrated structure, the clamping grooves 204 on two sides of the outer guard plate 203 are symmetrically distributed, the outer guard plate 203 can protect the connecting plate 201, and the clamping grooves 204 on two sides of the outer guard plate 203 can be connected with corresponding clamping blocks of the mounting position in a clamping mode.

As shown in fig. 2 to 3, a pipe body assembly 3 installed below the main body 1; the pipe body assembly 3 includes: the transistor 301, the outer wall of the transistor 301 is fixed with an anti-oxidation layer 302; raised line 303, it is fixed in the outer wall of transistor 301, and body subassembly 3 still includes: a positioning rubber sleeve 304 arranged on the upper outer side of the transistor 301; a flexible insulating sleeve 305 fixed on the inner side of the positioning rubber sleeve 304, wherein the inner side surface of the flexible insulating sleeve 305 is attached to the outer side surface of the transistor 301; the transistor 301 is fixedly connected with the substrate 101, convex strips 303 are symmetrically distributed on the outer wall of the transistor 301, the convex strips 303 are of an arc-shaped convex structure, the anti-oxidation layer 302 on the outer wall of the transistor 301 can prolong the service life of the transistor, and the convex strips 303 of the arc-shaped convex structure are arranged to facilitate the tightness of connection with a plugging part when the transistor 301 is used and prevent connection loosening; flexible insulating cover 305 is provided with threely, and flexible insulating cover 305 is annular hollow column structure, and be the integral structure between flexible insulating cover 305 and the location gum cover 304, the flexible insulating cover 305 that is annular hollow column structure is convenient for overlap and is established in the outside of transistor 301, thereby consolidate the protection to transistor 301 and substrate 101 top hookup location, avoid the junction fracture, flexible insulating cover 305 can play flexible guard action for flexible material moreover, still has insulating effect simultaneously.

In conclusion, when the high-efficiency power mosfet is used, the connection assembly 2 above the main body 1 facilitates connection and installation of the mosfet, the connection hole 202 at the connection plate 201 can be fixed and positioned by the positioning pin, the outer sheath 203 can protect the connection plate 201, the clamping grooves 204 at two sides of the outer sheath 203 can be connected with corresponding clamping blocks at the installation position in a clamping manner, the integrated positioning rubber sleeve 304 and the flexible insulating sleeve 305 can be sleeved on the upper side of the transistor 301 from bottom to top before use, so as to reinforce and protect the connection position of the transistor 301 and the top end of the substrate 101, avoid fracture of the connection position, the flexible insulating sleeve 305 is made of a flexible material, can play a role in flexible protection, and has an insulating effect, the anti-oxidation layer 302 on the outer wall of the transistor 301 can prolong the service life, and the arrangement of the convex strips 303 facilitates the tightness of the connection between the transistor 301 and the insertion position when in use, the connection is prevented from being loosened, in the using process, the heat dissipation fins 102 on the two sides of the substrate 101 can play a role in heat dissipation, the conducting indicator light 103 can be lightened under the condition that a circuit is switched on, and meanwhile, the built-in high-low level signal optical coupling isolation 104 can support high level triggering and low level triggering, so that the using process of the high-efficiency power MOS field effect transistor is completed.

Claims

1. High-efficiency power MOS field effect transistor, comprising:

a main body (1);

the method is characterized in that:

the main body (1) comprises:

the heat dissipation structure comprises a substrate (101), wherein heat dissipation fins (102) are fixed on two sides of the substrate (101);

a conduction indicator lamp (103) mounted on the outside of the substrate (101);

a light coupling isolator (104) mounted inside the substrate (101);

a connection assembly (2) fixed to an upper side of the main body (1);

a pipe body assembly (3) mounted below the main body (1);

the pipe body assembly (3) includes:

the anti-oxidation transistor comprises a transistor (301), wherein an anti-oxidation layer (302) is fixed on the outer wall of the transistor (301);

and a convex strip (303) fixed to the outer wall of the transistor (301).

2. The high efficiency power mosfet of claim 1 wherein the connection assembly (2) comprises:

the connecting plate (201), connecting hole (202) is seted up to the inside of connecting plate (201), and is fixed connection between connecting plate (201) and substrate (101).

3. The high efficiency power mosfet of claim 2 wherein the connection assembly (2) further comprises:

an outer guard plate (203) fixed above the connection plate (201);

and the clamping grooves (204) are arranged on two sides of the outer guard plate (203).

4. The high-efficiency power MOSFET according to claim 3, wherein the outer shield (203) and the connecting board (201) are integrally formed, and the clamping grooves (204) on both sides of the outer shield (203) are symmetrically distributed.

5. The high efficiency power mosfet of claim 1 wherein the body assembly (3) further comprises:

the positioning rubber sleeve (304) is arranged on the upper outer side of the transistor (301);

and the flexible insulating sleeve (305) is fixed on the inner side of the positioning rubber sleeve (304), and the inner side surface of the flexible insulating sleeve (305) is attached to the outer side surface of the transistor (301).

6. The high-efficiency power MOSFET according to claim 5, wherein the transistor (301) is fixedly connected to the substrate (101), and the outer wall of the transistor (301) is symmetrically distributed with raised strips (303), and the raised strips (303) are in an arc-shaped raised structure.

7. The high-efficiency power MOSFET according to claim 5, wherein the number of the flexible insulating sleeves (305) is three, the flexible insulating sleeves (305) are in a ring-shaped hollow structure, and the flexible insulating sleeves (305) and the positioning rubber sleeve (304) are in an integrated structure.