CN215481414U - Germanium single crystal straight-pulling growth device and growth furnace for removing floating slag - Google Patents
Germanium single crystal straight-pulling growth device and growth furnace for removing floating slag Download PDFInfo
- Publication number
- CN215481414U CN215481414U CN202122184503.7U CN202122184503U CN215481414U CN 215481414 U CN215481414 U CN 215481414U CN 202122184503 U CN202122184503 U CN 202122184503U CN 215481414 U CN215481414 U CN 215481414U
- Authority
- CN
- China
- Prior art keywords
- filter disc
- single crystal
- crucible
- cylinder
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a germanium single crystal straight pulling growth device for removing floating slag, which comprises a crucible and a filter disc arranged above the crucible, wherein the crucible is arranged on a rotary lifting device, the rotary lifting device drives the crucible to move towards or away from the filter disc, the filter disc is fixedly arranged on a guide cylinder, the guide cylinder is hoisted and arranged in a temperature field, and the bottom of the filter disc is provided with a plurality of liquid passing holes; also discloses a growing furnace, which adopts the growing device. The utility model can ensure that no floating slag exists in the crystal growth region, thereby ensuring the smooth operation of the crystal growth process.
Description
Technical Field
The utility model relates to the technical field of new material preparation, in particular to a germanium single crystal straight-pull growth device and a growth furnace for removing floating slag.
Background
At present, the germanium single crystal material is not only the preferred material of the outer space solar cell, but also the essential material of the infrared optical lens. The germanium material has wide application in infrared optical lens. More than 60% of the middle-low end infrared optical lenses are made of germanium single crystals, and 50% of the high end infrared optical lenses are made of germanium single crystals. The physical structure of the germanium single crystal material is a diamond structure, and the melting point is 937 ℃. The Cz method (Czochralski method) is generally used for crystal growth. However, since germanium has a low melting point, impurities in the germanium melt are not easily volatilized, and particularly, GeO (melting point 1115 ℃) and GeO2 (melting point 1086 ℃) have a melting point higher than that of germanium and cannot be melted into the germanium melt in the vicinity of the melting point of germanium, and therefore, when single crystal growth of germanium is performed, particles or clusters of particles formed of oxides such as GeO and GeO2 float on the surface of the germanium melt, and scum is formed. The floating slag seriously influences the growth process of the Cz method crystal, so that crystal transformation is easily generated by taking the floating slag as a crystal nucleus to generate polycrystal and twin crystal in the processes of seeding, shouldering and equal-diameter growth, the single crystal rate is seriously influenced, the production efficiency is greatly reduced, and the product cost is improved.
Disclosure of Invention
The utility model aims to provide a germanium single crystal straight pulling growth device and a growth furnace for removing floating slag, which can ensure that no floating slag exists in a crystal growth region, thereby ensuring the smooth operation of the crystal growth process.
In order to solve the technical problem, the utility model provides a germanium single crystal straight pulling growth device for removing floating slag, which comprises a crucible and a filter disc arranged above the crucible, wherein the crucible is arranged on a rotary lifting device, the rotary lifting device drives the crucible to move towards or away from the filter disc, the filter disc is fixedly arranged on a guide flow cylinder, the guide flow cylinder is arranged in a temperature field in a hoisting manner, and the bottom of the filter disc is provided with a plurality of liquid passing holes.
Further, the diameter of the liquid passing hole is 1-2 mm.
Furthermore, the liquid passing hole is of a conical structure, the small end of the liquid passing hole is positioned on one side of the crucible, and the diameter of the small end of the liquid passing hole is 1-2 mm.
Further, the draft tube comprises an outer layer tube body and an inner layer tube body which are sleeved with each other, a bearing support portion is arranged at the bottom of the outer layer tube body along the horizontal direction, an outer folded edge on the filter disc is locked with the bearing support portion through a bolt, and the bottom of the inner layer tube body is abutted to the bearing support portion.
Further, a heat insulation filling layer is arranged between the outer layer cylinder body and the inner layer cylinder body.
Further, the temperature field comprises a heat preservation cylinder and a heater, an annular upper cover is arranged at the top of the heat preservation cylinder, and the guide cylinder is hung on the inner side of the annular upper cover.
Further, the heat preservation section of thick bamboo includes from last barrel, well barrel and the lower barrel that sets gradually down, go up and all be provided with annular locating plate between barrel and the well barrel and between well barrel and the lower barrel.
A germanium single crystal czochralski growth furnace for removing floating slag comprises the growth device, wherein the growth device is arranged in a furnace body shell.
Further, an Ar gas pipeline is arranged on the furnace body shell, and gas is introduced into the guide cylinder through the Ar gas pipeline and is discharged from the liquid passing hole of the filter disc.
The utility model has the beneficial effects that:
1. the filter disc can extend below the liquid level of the raw materials, liquid placed below the liquid level of the raw materials is introduced into the filter disc and is used for crystal growth, the influence of floating slag on the liquid level of the raw materials can be effectively eliminated, the floating slag cannot enter the filter disc, and the growth quality is guaranteed.
2. The arrangement of a plurality of liquid passing holes can ensure the entering of raw material liquid under the condition of partial blockage, and the stability in the preparation process is ensured.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of a liquid passing pore structure of the present invention;
FIG. 3 is a schematic diagram of the position structure of the crucible and the filter disc before crystal growth;
FIG. 4 is a schematic view of the position of the crucible and the filter tray after separating dross;
FIG. 5 is a schematic view of the structure during crystal growth;
FIG. 6 is a schematic diagram of the position structure of the crucible and the filter disc before the temperature of the crystal is reduced;
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Referring to fig. 1 to 6, an embodiment of a germanium single crystal czochralski growth apparatus for removing floating slag according to the present invention comprises a crucible 1 and a filter disc 2 arranged above the crucible, the crucible is arranged on a rotary lifting device 3, the rotary lifting device drives the crucible to move towards or away from the filter disc, the filter disc is fixedly arranged on a guide cylinder 4, the guide cylinder is arranged in a thermal field 5 in a hoisting manner, the bottom of the filter disc is provided with a plurality of liquid passing holes 6, the diameter of the liquid passing holes is 1-2mm, and floating slag is effectively prevented from entering the filter disc while liquid is ensured to enter the filter disc.
The raw materials are placed in a crucible, a thermal field provides heating energy and a heat preservation effect, the thermal field comprises a heat preservation cylinder and a heater 12, an annular upper cover 13 is arranged at the top of the heat preservation cylinder, a guide cylinder is hung on the inner side of the annular upper cover, the heater heats and melts the raw materials in the crucible into raw material liquid, scum 111 appearing in the melting process floats on the raw material liquid level of the raw material liquid, when the scum is discharged, a rotary lifting device drives the crucible to move towards a filter disc, the bottom of the filter disc is immersed in the raw material liquid, in the process, a liquid passing hole on the bottom of the filter disc effectively prevents the scum from entering the filter disc, the raw material liquid can easily enter, the scum pressed at the bottom of the filter disc moves towards the periphery of the filter disc along with buoyancy along with the continuous rising of the filter liquid level, as shown in figure 4, the scum is extruded at the periphery, and the bottom of the filter disc is immersed in the raw material liquid, therefore, raw material liquid entering the inside of the filter disc does not have scum, and the subsequent crystal growth quality is ensured.
In order to guarantee the effect of preventing dross to get into the filter disc, when the crucible rises and the raw materials liquid level is close to the filter disc bottom, stop the crucible earlier and continue to rise, through carrying out the air feed above the filter disc, gaseous passing through in the liquid hole lets in the crucible, gaseous circulation speed can blow away the dross on the raw materials liquid level, because gaseous from crossing the liquid hole and blowing off, consequently can guarantee to cross liquid hole below and not have the dross, the crucible continues to rise afterwards, the raw materials liquid level that does not have the dross contacts with crossing the liquid hole, clean raw materials liquid gets into in the filter disc, realize effectively getting rid of the purpose of dross, guarantee the effect in no dross gets into the filter disc. The liquid passing hole is designed to be of a conical structure, the small end of the liquid passing hole is located on one side of the crucible, the diameter of the small end of the liquid passing hole is 1-2mm, and as shown in fig. 2, the liquid passing hole of the conical structure can increase the flow rate of gas and ensure the effect that scum is blown away and away from the liquid passing hole.
Specifically, after the filter disc effectively removes the scum, the crystal 113 can be grown, the crystal is grown by contacting the seed crystal 112 with the raw material liquid, as shown in fig. 5, during the growth process, the crucible needs to be continuously lifted to keep the liquid level in the filter disc unchanged; and in the tail section of crystal growth, the crucible is required to descend, the melt in the filter disc can rapidly flow out of the filter disc along with the descending of the crucible, and after the melt completely flows back into the crucible, the crucible stops descending, and the final stage of crystal growth is carried out.
The bottom of the filter disc is spherical, but the filter disc is flat and smooth in whole, so that scum can be guided to move towards the periphery conveniently when being extruded, the flat spherical structure is more attached to the bottom surface of the crucible, interference is reduced, more liquid in the crucible can enter the filter disc, raw materials are fully utilized, and crystals with larger sizes can be prepared conveniently.
Foretell draft tube is including the outer barrel 7 and the inlayer barrel 8 of establishing of overlapping each other, and outer barrel bottom is provided with along the horizontal direction and bears the support portion, and the outer hem on the filter disc passes through bolt 10 lock solid with bearing the support portion, and inlayer barrel bottom and bearing support portion butt set up, cup joint the setting, make things convenient for the installation of filter disc, reduce the equipment degree of difficulty. And a heat insulation filling layer is arranged between the outer-layer cylinder body and the inner-layer cylinder body so as to better control the growth temperature.
Foretell heat preservation section of thick bamboo includes from last barrel 14, well barrel 15 and the lower barrel 16 that sets gradually extremely down, through the multistage design, can conveniently assemble, reduces the preparation degree of difficulty of a heat preservation section of thick bamboo, goes up and all is provided with annular locating plate 17 between barrel and the well barrel and between well barrel and the lower barrel, and the position accuracy of assembly is also guaranteed to convenient fixing.
The application also discloses a germanium single crystal straight pulling growth furnace for removing floating slag, which comprises any one of the growth devices, and the growth device is arranged in the furnace body shell to improve the growth quality. The Ar gas pipeline is arranged on the furnace body shell, gas is introduced into the guide cylinder and discharged from the liquid passing hole of the filter disc through the Ar gas pipeline, the Ar gas needs to be used in crystal growth, scum blowing is carried out by adopting the gas, and the Ar gas pipeline has two purposes and a good effect.
The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the utility model is all within the protection scope of the utility model. The protection scope of the utility model is subject to the claims.
Claims (9)
1. The germanium single crystal straight pulling growth device for removing floating slag is characterized by comprising a crucible and a filter disc arranged above the crucible, wherein the crucible is arranged on a rotary lifting device, the rotary lifting device drives the crucible to move towards or away from the filter disc, the filter disc is fixedly arranged on a guide cylinder, the guide cylinder is hoisted and arranged in a temperature field, and a plurality of liquid passing holes are formed in the bottom of the filter disc.
2. The apparatus for the Czochralski growth of a germanium single crystal for removing dross of claim 1, wherein the diameter of the liquid passing hole is 1 to 2 mm.
3. The apparatus for vertically pulling a germanium single crystal for removing dross as claimed in claim 1, wherein the liquid passing hole has a tapered configuration, a small end of the liquid passing hole is positioned at one side of the crucible, and a diameter of the small end of the liquid passing hole is 1 to 2 mm.
4. The germanium single crystal czochralski growth device for removing the dross as claimed in claim 1, wherein the draft tube comprises an outer layer tube body and an inner layer tube body which are sleeved with each other, a bearing support part is arranged at the bottom of the outer layer tube body along the horizontal direction, an outer folded edge on the filter disc is locked with the bearing support part through a bolt, and the bottom of the inner layer tube body is abutted against the bearing support part.
5. A Ge single crystal Czochralski growth apparatus for the removal of dross as claimed in claim 4, wherein an insulating filling layer is provided between the outer shell and the inner shell.
6. The germanium single crystal czochralski growth apparatus for removing the dross as claimed in claim 1, wherein the thermal field comprises a heat-insulating cylinder and a heater, an annular upper cover is arranged at the top of the heat-insulating cylinder, and the guide cylinder is hung on the inner side of the annular upper cover.
7. A Ge single crystal Czochralski growth apparatus for removing dross as in claim 6, wherein the heat-insulating cylinder comprises an upper cylinder, a middle cylinder and a lower cylinder arranged in this order from top to bottom, and annular positioning plates are arranged between the upper cylinder and the middle cylinder and between the middle cylinder and the lower cylinder.
8. A germanium single crystal Czochralski growth furnace for removing floating slag, comprising the growth apparatus according to any one of claims 1 to 7, wherein the growth apparatus is disposed in a furnace body housing.
9. The germanium single crystal czochralski growth furnace for removing the floating slag according to claim 8, wherein an Ar gas pipeline is arranged on the furnace body shell, and the Ar gas pipeline leads gas into the guide cylinder and discharges the gas from the liquid passing hole of the filter disc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122184503.7U CN215481414U (en) | 2021-09-10 | 2021-09-10 | Germanium single crystal straight-pulling growth device and growth furnace for removing floating slag |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122184503.7U CN215481414U (en) | 2021-09-10 | 2021-09-10 | Germanium single crystal straight-pulling growth device and growth furnace for removing floating slag |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215481414U true CN215481414U (en) | 2022-01-11 |
Family
ID=79768791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122184503.7U Active CN215481414U (en) | 2021-09-10 | 2021-09-10 | Germanium single crystal straight-pulling growth device and growth furnace for removing floating slag |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215481414U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116377561A (en) * | 2023-01-03 | 2023-07-04 | 有研国晶辉新材料有限公司 | Method for removing germanium single crystal melt scum and device for removing germanium single crystal melt scum |
-
2021
- 2021-09-10 CN CN202122184503.7U patent/CN215481414U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116377561A (en) * | 2023-01-03 | 2023-07-04 | 有研国晶辉新材料有限公司 | Method for removing germanium single crystal melt scum and device for removing germanium single crystal melt scum |
| CN116377561B (en) * | 2023-01-03 | 2024-02-13 | 有研国晶辉新材料有限公司 | Method for removing germanium single crystal melt scum and device for removing germanium single crystal melt scum |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105247114B (en) | Pulling crucible for controlling oxygen and related methods | |
| TWI652380B (en) | Crystal growing systems and crucibles for enhancing heat transfer to a melt | |
| CN215481414U (en) | Germanium single crystal straight-pulling growth device and growth furnace for removing floating slag | |
| EP2971275B1 (en) | Crucible assembly for controlling oxygen and related methods | |
| CN214529320U (en) | Single crystal furnace | |
| CN110923810A (en) | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon | |
| CN109837584A (en) | A kind of fusion joining process of progress in Czochralski silicon core raw material stick | |
| CN113061980A (en) | Device and method for growing lithium fluoride single crystal | |
| CN113818074A (en) | Device and method for preparing monocrystalline silicon by directly using granular silicon in CCZ Czochralski method | |
| KR101563221B1 (en) | Single crystal manufacturing apparatus and manufacturing method | |
| WO2021128643A1 (en) | Semiconductor silicon material consumable growth furnace and preparation method for silicon material | |
| CN211734524U (en) | Semiconductor silicon material consumable material growth furnace | |
| CN107075717B (en) | Crystal puller for preventing melt contamination | |
| CN214612842U (en) | Device for growing lithium fluoride single crystal | |
| CN114277430A (en) | Czochralski silicon sintering furnace | |
| JP6597857B1 (en) | Heat shielding member, single crystal pulling apparatus and single crystal manufacturing method | |
| JPS63256593A (en) | Apparatus for growing single crystal | |
| US9476141B2 (en) | Weir for inhibiting melt contamination | |
| KR101969648B1 (en) | Method for removing residual impurity silicon melt in crucible for ingot growth | |
| CN210916346U (en) | Intelligent temperature control single crystal furnace for chip manufacturing | |
| CN204198901U (en) | A kind of sapphire crystal EFG technique growing apparatus | |
| CN219297703U (en) | Thermal field structure of Czochralski monocrystalline silicon | |
| CN217869173U (en) | Device for preparing monocrystalline silicon by using granular silicon directly in zone melting method | |
| CN208023109U (en) | A kind of anti-overflow polycrystalline silicon ingot or purifying furnace with gear carbon slag plate | |
| CN114574943A (en) | Single crystal furnace and single crystal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230419 Address after: 066000 Green Chemical Industry Park, Lulong Economic Development Zone, Qinhuangdao City, Hebei Province, South of Yongwang Street, East of Kaiwu Road Patentee after: Qinhuangdao microcrystalline Technology Co.,Ltd. Address before: 066000 No.1 Xihu Road, Qinhuangdao Economic and Technological Development Zone, Qinhuangdao City, Hebei Province Patentee before: INTRINIC CRYSTAL TECHNOLOGY CO.,LTD. |