CN215466193U

CN215466193U - Combined type testing device capable of realizing automatic separation of high-resistance silicon wafers and separator

Info

Publication number: CN215466193U
Application number: CN202122091458.0U
Authority: CN
Inventors: 李朋真; 周涛; 王振国; 张志林
Original assignee: LUOYANG HONGTAI SEMICONDUCTOR CO Ltd
Current assignee: LUOYANG HONGTAI SEMICONDUCTOR CO Ltd
Priority date: 2021-08-31
Filing date: 2021-08-31
Publication date: 2022-01-11
Anticipated expiration: 2031-08-31

Abstract

The utility model discloses a combined type testing device capable of realizing automatic sorting of high-resistance silicon wafers, which comprises a cabinet, a conveying belt arranged on the cabinet, a thickness testing table and a resistivity testing table, wherein the thickness testing table is positioned at the upstream of the conveying belt; the resistivity test bench is positioned at the downstream of the conveying belt, and the four probe modules are adopted to test the resistivity of the high-resistance silicon wafer. The classifier provided with the combined testing device adopts the four-probe module with high-precision testing performance to test the resistivity of the silicon wafer, the testing precision is high, the upper limit of the resistivity testing range is increased from 100 ohm cm to more than 500 ohm cm, and the application range of the classifier is greatly increased; four probes are selected as resistivity testing elements, so that the area of the testing point is small, the position is accurate, and the problem that the resistivity data of the testing point cannot be accurately represented when the resistivity is tested by a traditional sorter is solved; the four probes are conventional testing equipment, the price is far lower than that of an imported eddy current sensor, and the maintenance and the replacement are convenient.

Description

Combined type testing device capable of realizing automatic separation of high-resistance silicon wafers and separator

Technical Field

The utility model belongs to the technical field of semiconductor silicon wafer detection, and particularly relates to a combined type testing device and a sorter capable of realizing automatic sorting of high-resistance silicon wafers.

Background

In order to accurately control the electrical parameters of the corresponding semiconductor device, the thickness and the resistivity of the silicon wafer need to be subdivided in the processing process of the silicon wafer. The traditional sorter adopts an eddy current sensor to test the resistivity of a silicon wafer, the higher the resistivity is, the poorer the testing precision is, when the resistivity is higher than 100 ohm cm, the deviation can reach unacceptable degree, and the eddy current test is an average value of a small area, so that the resistivity data of a test point can not be accurately represented. Therefore, the resistivity test of the high-resistance silicon wafer can only adopt the traditional four-probe manual test mode, and the mode not only has low test speed, but also is easy to generate human errors.

Disclosure of Invention

Aiming at the defect that the traditional sorter cannot meet the requirement of testing the resistivity of the high-resistance silicon wafer, the utility model aims to provide the combined testing device capable of automatically sorting the high-resistance silicon wafer, so that the sorter adopting the combined testing device can meet the requirement of testing the resistivity of the high-resistance silicon wafer.

The purpose of the utility model is realized by adopting the following technical scheme. The combined testing device capable of realizing automatic sorting of the high-resistance silicon wafers comprises a cabinet 10, a conveying belt arranged on the cabinet, a thickness testing table 30 and at least one resistivity testing table 40, wherein the thickness testing table is positioned at the upstream of the conveying belt and used for testing the thickness of the high-resistance silicon wafers on the conveying belt; the resistivity test bench is positioned at the downstream of the conveying belt, and the four probe modules are adopted to test the resistivity of the high-resistance silicon wafer on the conveying belt.

Furthermore, two resistivity test tables are arranged, each of the two resistivity test tables comprises a first conveying belt positioned at the upstream and two second conveying belts arranged in parallel and positioned at the downstream, the thickness test table is used for testing the thickness of the high-resistance silicon wafer on the first conveying belt, and each resistivity test table adopts a four-probe module to test the resistivity of the high-resistance silicon wafer on the corresponding second conveying belt; the combined type testing device further comprises a belt rotating mechanism which is respectively connected with the discharging end of the first conveying belt and the feeding end of the second conveying belt so as to transfer the high-resistance silicon wafers subjected to the thickness test to the two second conveying belts one by one.

Furthermore, the resistivity test bench is provided with two belt rotating mechanisms which are symmetrically arranged at two sides of the downstream of the conveying belt, and the belt rotating mechanisms are positioned at the downstream of the conveying belt and used for transferring the high-resistance silicon wafers with the thickness tested to the resistivity test bench one by one.

Further, the thickness test bench comprises a first mounting platform 301 mounted on the cabinet; the first supporting seat 302 is assembled on the first mounting platform, an upper thickness measuring probe 303 and a lower thickness measuring probe which are oppositely arranged are arranged on the first supporting seat, the upper thickness measuring probe and the lower thickness measuring probe are respectively positioned at two sides of an upstream conveying belt, and the upper part of the first supporting seat is also provided with a protective cover 305 for covering the upper thickness measuring probe; and the first jacking mechanism 304 is assembled on the first mounting platform and is used for driving the high-resistance silicon wafer on the conveying belt to move upwards for thickness testing and driving the high-resistance silicon wafer to move downwards onto the conveying belt after the thickness testing is finished.

Further, the first jacking mechanism includes a first driving motor 3042 and a first bearing table 3043, the first driving motor 3042 is assembled on the first mounting platform 301, and an output shaft of the first driving motor 3042 is connected with the first bearing table 3043 through a cam transmission mechanism, two sides of the first bearing table are assembled on the first mounting platform in a sliding manner, and the first bearing table is located between the upward conveying belt and the lower thickness measuring probe in an initial state; the first plummer 3043 is provided with a first through hole 30431, and a connection line between the upper thickness measuring probe and the lower thickness measuring probe passes through the first through hole.

Further, the resistivity test stand comprises a second mounting platform 401 mounted on the cabinet; a second supporting seat 402 assembled on the second mounting platform, wherein the second supporting seat is slidably assembled with a four-probe module 403 positioned at the upper side of the upward conveying belt; a second jacking mechanism 404 assembled on the second mounting platform, the second jacking mechanism being configured to drive the high-resistance silicon wafer on the conveyor belt to move upward for resistivity test, and to drive the high-resistance silicon wafer to move downward onto the second conveyor belt after the resistivity test is completed; and the centering and positioning mechanism is assembled on the second mounting platform and used for forming abutting fit with the high-resistance silicon wafer after the high-resistance silicon wafer moves upwards to a certain position so as to realize centering and positioning and releasing the abutting fit after the resistivity test is finished so as to allow the high-resistance silicon wafer to move downwards.

Further, the second jacking mechanism comprises a second driving mechanism and a second bearing table 4042, the second driving mechanism is assembled on the second mounting platform, the output end of the second driving mechanism is connected with the bearing table, the bottom of the bearing table is provided with a guide pillar 40431 extending in the vertical direction, and a guide sleeve 40432 in sliding fit with the guide pillar is arranged on the second mounting platform, and the second bearing table is located on the lower side of the upward conveying belt in the initial state.

Furthermore, the centering and positioning mechanism comprises a third driving mechanism, a guide plate 4053, a first sliding seat 40551 and a second sliding seat 40552, the guide plate is assembled on the second mounting platform, a mounting cavity is formed between the guide plate and the second mounting platform, the first sliding seat and the second sliding seat are assembled on the second mounting platform in a sliding manner and are positioned in the mounting cavity, and the output end of the third driving mechanism is respectively connected with the first sliding seat and the second sliding seat; the guide plate is provided with a through hole which is positioned below the four-probe module and is used for the output end of the jacking mechanism to pass through, one side of the through hole is provided with at least one guide groove 40531, and the other side of the through hole is provided with at least two guide grooves 40531; a positioning column 4052 is arranged in each guide groove in a penetrating manner, the lower end of the positioning column on one side of the through hole is arranged on the first sliding seat in a sliding manner, the lower end of the positioning column on the other side of the through hole is arranged on the second sliding seat in a sliding manner, and each positioning column protrudes out of the upper end of the guide plate and is used for being in butt fit with the high-resistance silicon wafer.

Furthermore, a shielding cover 406 covering the four-probe module, the second jacking mechanism and the centering and positioning mechanism is also assembled on the second mounting platform.

The sorter provided with the combined testing device provided by the utility model has the advantages that the resistivity of the silicon wafer is tested by selecting the four-probe module with high-precision testing performance, the testing precision is high, the upper limit of the resistivity testing range is increased from 100 ohm cm to more than 500 ohm cm, and the application range of the sorter is greatly increased; four probes are selected as resistivity testing elements, so that the area of a test point is small, the position is accurate, and the problem that the resistivity data of the test point cannot be accurately represented when the resistivity is tested by a traditional sorter is solved; meanwhile, the four probe modules are conventional testing equipment, the price of the four probe modules is far lower than that of an imported eddy current sensor, and the four probe modules are convenient to maintain and replace.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

FIG. 1 is a schematic top view of an embodiment of a combined testing apparatus capable of automatically sorting high-resistance silicon wafers according to the present invention.

Fig. 2 is a schematic perspective view of the thickness test stand in the embodiment of fig. 1.

FIG. 3 is a perspective view of the thickness test station of FIG. 2 with the protective cover removed and the first jack mechanism.

Fig. 4 is a schematic perspective view of the first jacking mechanism in the thickness test bench of fig. 2 in another direction.

FIG. 5 is a schematic perspective view of the resistivity test stand of the embodiment shown in FIG. 1.

FIG. 6 is a schematic perspective view of the resistivity testing stand of FIG. 5 with the shield removed.

FIG. 7 is a schematic perspective view of a second jack mechanism of the resistivity test stand of FIG. 5.

FIG. 8 is a schematic perspective view of a centering and positioning mechanism in the resistivity test rig of FIG. 5.

Detailed Description

To further illustrate the technical means and effects of the present invention for achieving the predetermined purpose, the following detailed description will be given to the structure, features and effects of a combined testing device capable of realizing automatic sorting of high resistance silicon wafers according to the present invention with reference to the accompanying drawings and preferred embodiments.

The utility model discloses a combined type testing device capable of realizing automatic sorting of high-resistance silicon wafers, which comprises a cabinet 10, a thickness testing table 30 and at least one resistivity testing table 40, wherein the cabinet is used for installing a conveying belt; the conveying belt is used for conveying the high-resistance silicon wafer 50, the conveying belt is an existing mature device, only briefly described here, the conveying belt comprises two narrow belts which are symmetrically distributed, and a gap between the two narrow belts allows other parts to drive the high-resistance silicon wafer to move up and down; the thickness test bench is positioned at the upstream of the conveying belt and used for testing the thickness of the high-resistance silicon wafer; the resistivity test bench is positioned at the downstream of the conveying belt, and the four probe modules are adopted to test the resistivity of the high-resistance silicon wafer.

Referring to fig. 1, a combined testing apparatus for realizing automatic sorting of high resistance silicon wafers according to an embodiment of the present invention is shown, and for convenience of description, the direction perpendicular to the conveying belt is defined as an "up-down direction". In order to improve the testing efficiency of the high-resistance silicon wafers, the embodiment includes a first conveyor belt 201 located at the upstream, two second conveyor belts 202 arranged in parallel and located at the downstream, a belt rotating mechanism 60, a thickness testing table 30 and two resistivity testing tables 40, wherein the thickness testing table is used for performing thickness testing on a plurality of high-resistance silicon wafers 50 conveyed on the first conveyor belt one by one; the belt rotating mechanism is connected with the discharge end of the first conveying belt and used for transferring the high-resistance silicon wafers subjected to the thickness test to the two second conveying belts one by one; each second conveying belt is matched with one resistivity test bench which is used for carrying out resistivity test on a plurality of high-resistance silicon wafers conveyed on the second conveying belts.

The thickness test bench in the embodiment adopts a non-contact mode to test the thickness of the high-resistance silicon wafer, and specifically comprises a first mounting platform 301, wherein the first mounting platform is assembled on a cabinet and provides support for assembling other components; the thickness measuring device further comprises a first supporting seat 302 assembled on one side of the first mounting platform, wherein the upper part of the first supporting seat is provided with an upper thickness measuring probe 303 positioned on the upper side of the first conveying belt which moves upwards, the lower part of the first supporting seat is provided with a lower thickness measuring probe positioned on the lower side of the first conveying belt which moves upwards, and the upper thickness measuring probe and the lower thickness measuring probe are arranged in a vertically opposite mode; the device further comprises a first jacking mechanism 304 which is used for driving the high-resistance silicon wafer on the first conveying belt to move upwards for thickness testing and driving the high-resistance silicon wafer to move downwards to the first conveying belt after the thickness testing is finished, and the first jacking mechanism is assembled on the other side of the first mounting platform.

Specifically, referring to fig. 2 and fig. 3, the first jacking mechanism includes a first base 3041, a first driving motor 3042, and a first supporting platform 3043, the first base is assembled on the other side of the first mounting platform, the first driving motor is assembled on the first base, an output shaft of the first driving motor is connected to the first supporting platform through a cam transmission mechanism, and two sides of the first supporting platform are assembled on the first base in a sliding manner through the cooperation of a first sliding block and a first sliding rail 3044; in an initial state, the first bearing table is located between the lower thickness measuring probe and the first conveying belt which is moving upwards, the first bearing table is provided with a first through hole 30431 in a penetrating manner, and a connecting line of the upper thickness measuring probe and the lower thickness measuring probe penetrates through the first through hole. When the high-resistance silicon wafer 50 on the first conveying belt is conveyed to a position between the upper thickness measuring probe and the lower thickness measuring probe, the first driving motor drives the first bearing table to circulate through the following process through the cam transmission mechanism: the first bearing table drives the high-resistance silicon wafer to move upwards to perform thickness testing, and after the thickness testing is completed, the first bearing table drives the high-resistance silicon wafer to move downwards to the first conveying belt to allow the high-resistance silicon wafer after the thickness testing is completed to be conveyed continuously. Of course, in other embodiments of the present invention, other types of driving mechanisms may be used instead of the first driving motor, such as a cylinder, and the piston shaft of the cylinder is directly connected to the first bearing table to move the first bearing table up and down.

Furthermore, for high-resistance silicon wafers with different sizes, the distance between the upper thickness measuring probe and the lower thickness measuring probe needs to be properly adjusted, so that the upper thickness measuring probe and the lower thickness measuring probe are both slidably assembled on the first support base through the cooperation of the second slide block and the second slide rail 3045. Further, referring to fig. 4, in order to facilitate the assembly of the lower thickness measuring probe, the wall of the carrier platform facing the first supporting base is provided with an opening 30432 communicating with the first through hole, and further, referring to fig. 2, the upper portion of the first supporting base is provided with a protective cover 305 covering the upper thickness measuring probe.

In other embodiments of the present invention, the thickness testing platform can also test the thickness of the high-resistance silicon wafer in a contact manner.

The belt rotating mechanism is a conventional mature device, which is not described in detail herein, and in other embodiments of the present invention, a robot may be used as the belt rotating mechanism.

The resistivity test bench specifically comprises a second mounting platform 401, wherein the second mounting platform is assembled on the machine cabinet and provides support for assembling the four-probe module, the second jacking mechanism and the centering and positioning mechanism; the testing device further comprises a second supporting seat 402 assembled on the second mounting platform, wherein the upper part of the second supporting seat is assembled with a four-probe module 403 which is positioned on the upper side of the second conveying belt in the upward direction in a sliding manner and is used for contacting a high-resistance silicon wafer to perform resistivity testing, and the four-probe module is existing mature equipment and is not detailed herein; the second jacking mechanism 404 is used for driving the high-resistance silicon wafer conveyed on the second conveying belt to move upwards to perform resistivity test and driving the high-resistance silicon wafer to move downwards to the second conveying belt after the resistivity test is completed; the high-resistance silicon wafer centering and positioning device further comprises a centering and positioning mechanism which is used for forming abutting fit with the high-resistance silicon wafer after the high-resistance silicon wafer moves upwards to the position so as to realize centering and positioning, and releasing the abutting fit after the resistivity test is completed so as to allow the high-resistance silicon wafer to move downwards.

Specifically, referring to fig. 5 and 7, the second jacking mechanism includes a second driving motor 4041 and a second carrying platform 4042 located at the lower side of the four-probe module, the second driving motor is assembled at the lower side of the second mounting platform, and the output shaft of the second driving motor is connected with the second carrying platform through a cam transmission mechanism, and the second carrying platform is located at the lower side of the upward second conveying belt in the initial state; two guide posts 40431 are symmetrically arranged at the bottom of the second bearing platform, and a guide sleeve 40432 in sliding fit with the guide posts is arranged on the second mounting platform. When the high-resistance silicon wafer 50 on the second conveying belt is conveyed to the lower side of the four probe modules 403, the second driving motor drives the second bearing table to circulate through the following processes through the cam transmission mechanism: the second bearing table drives the high-resistance silicon wafer to move upwards to perform resistivity test, and after the resistivity test is completed, the second bearing table drives the high-resistance silicon wafer to move downwards to the second conveying belt to allow the high-resistance silicon wafer after the resistivity test is completed to be conveyed continuously. Of course, in other embodiments of the present invention, other types of driving mechanisms may be used instead of the second driving motor, such as an air cylinder, and the piston shaft of the air cylinder is directly connected to the second carrying platform to move the second carrying platform up and down.

Specifically, referring to fig. 5, 6 and 8, the centering and positioning mechanism includes a third driving motor 4051, a pulley transmission mechanism, four positioning columns 4052 and a guide plate 4053, the guide plate is assembled on the upper side of the second mounting platform, and an installation chamber is formed between the guide plate and the second mounting platform, the guide plate is provided with four guide grooves 40531 and a second through hole for the second bearing platform (i.e., the output end of the second jacking mechanism) to pass through, and the four guide grooves surround the second through hole and are distributed in an X shape, so as to adapt to high-resistance silicon wafers of different sizes; the belt wheel transmission mechanism is arranged in the installation cavity and comprises two belt wheels 40541 which are symmetrically arranged and a transmission belt 40542 which is matched with the two belt wheels, wherein one belt wheel is connected with an output shaft of the third driving motor; the four positioning columns are respectively arranged in corresponding guide grooves, the upper ends of the positioning columns protrude out of the guide plates and then are located on the upper side of the ascending second conveying belt, the two positioning columns located on one side of the second through hole are respectively arranged on a first sliding seat 40551 located in the installation cavity in a sliding mode, the first sliding seat is fixedly connected with the ascending driving belt, two ends of the first sliding seat are respectively assembled on a third sliding rail 4056, the two positioning columns located on the other side of the second through hole are respectively arranged on a second sliding seat 40552 located in the installation cavity in a sliding mode, the second sliding seat is fixedly connected with the descending driving belt, two ends of the second sliding seat are respectively assembled on the third sliding rail 4056, and the sliding directions of the first sliding seat and the second sliding seat are opposite. After the second bearing table drives the high-resistance silicon wafer to move upwards to the right position, the third driving motor drives the transmission belt to walk, the first sliding seat and the second sliding seat drive the four positioning columns 4052 to move towards each other, the two positioning columns on the same side are close to each other under the guidance of the corresponding guide grooves, the upper ends of the four positioning columns are in butt fit with the high-resistance silicon wafer from four positions along the circumferential direction, the high-resistance silicon wafer is centered and positioned, the four probe modules move downwards to test the resistivity of the high-resistance silicon wafer, the third driving motor drives the transmission belt to reversely walk after the test is completed, the first sliding seat and the second sliding seat drive the four positioning columns 1052 to move backwards, the two positioning columns on the same side are far away from each other under the guidance of the corresponding guide grooves, the butt fit is removed, and the second bearing table is allowed to drive the high-resistance silicon wafer to move downwards at the moment. Furthermore, the centering and positioning mechanism further comprises a limiting plate 4057 located between the second conveying belt and the guide plate, the second limiting plate is provided with two limiting holes 40571 on the side surfaces of the two sides of the four-probe module, each limiting hole is provided with an opening, the opening is used for enabling the middle part of the corresponding positioning column to enter the limiting hole to form stop matching, and certainly, a protective sleeve can be further arranged at the upper end of the positioning column protruding out of the guide plate to avoid the phenomenon that the positioning column damages the silicon wafer when contacting the high-resistance silicon wafer. In addition, in other embodiments of the present invention, other types of transmission mechanisms may be used to replace the pulley transmission mechanism, such as a lead screw transmission mechanism, where two sections of threads with opposite turning directions at two ends are disposed on the lead screw, and the two nuts and the two sections of threads are matched to realize the opposite movement and the back movement of the first sliding seat and the second sliding seat; instead of the third drive motor, other types of drive mechanisms can also be used, for example two cylinders, in which the piston shaft of one cylinder is connected to the first carriage and the piston shaft of the other cylinder is connected to the second carriage.

Furthermore, the second mounting platform is also provided with a shielding cover 406 covering the four-probe module, the second jacking mechanism and the centering and positioning mechanism, and openings for the upward second conveying belt to pass through are symmetrically arranged on two sides of the shielding cover. Through the shielding case, increase electromagnetic shield, reduce test signal interference, improve test stability.

Furthermore, in the present embodiment, a second centering mechanism 70 located upstream of the thickness test table is further disposed on the lower side of the upstream first conveyor belt, and centering positioning is performed before the high-resistance silicon wafer is subjected to the thickness test.

In addition, in other embodiments of the present invention, three positioning posts may be adopted, in which case one positioning post is located on one side of the four-probe module (defined as a first positioning post), and the other two positioning posts are located on the other side of the four-probe module (defined as a second positioning post), and in which case the extension line of the first guide slot (for the first positioning post to be placed in) is preferably located between the two second guide slots (for the second positioning post to be placed in).

In addition, in other embodiments of the utility model, if only one resistivity test station is used, then both the second conveyor belt and the turn-around mechanism may be eliminated, leaving only the first conveyor belt.

In addition, in other embodiments of the present invention, the combined testing apparatus may adopt another arrangement, specifically: and removing the second conveying belt, only reserving the first conveying belt, arranging the thickness test tables at the upstream of the first conveying belt, symmetrically arranging the two resistivity test tables at two sides of the downstream of the first conveying belt, and completing the position conversion of the high-resistivity silicon wafer between the first conveying belt and the second bearing table of the resistivity test table through a belt rotating mechanism positioned at the downstream of the conveying belt.

On the basis of the foregoing embodiment, the utility model further provides a sorter, which comprises a combined testing device, a feeding station and a sorting station, wherein the feeding end of a conveying belt of the combined testing device is connected with the feeding station, the discharging end of the conveying belt of the combined testing device is connected with the sorting station, and the feeding station and the sorting station are the existing mature technologies and are not described in detail herein.

The above description is only a preferred embodiment of the present invention, and any person skilled in the art can make any simple modification, equivalent change and modification to the above embodiments according to the technical essence of the present invention without departing from the scope of the present invention, and still fall within the scope of the present invention.

Claims

1. A combined type testing device capable of realizing automatic sorting of high-resistance silicon wafers comprises a cabinet (10), a conveying belt installed on the cabinet, a thickness testing table (30) and at least one resistivity testing table (40), and is characterized in that the thickness testing table is located at the upstream of the conveying belt and used for testing the thickness of the high-resistance silicon wafers on the conveying belt; the resistivity test bench is positioned at the downstream of the conveying belt, and the four probe modules are adopted to test the resistivity of the high-resistance silicon wafer on the conveying belt.

2. The combined testing device capable of realizing automatic sorting of the high-resistance silicon wafers as claimed in claim 1, wherein two resistivity testing stations are provided, each of the resistivity testing stations comprises a first conveying belt located at an upstream position and two second conveying belts located at a downstream position, the thickness testing stations are used for testing the thickness of the high-resistance silicon wafers on the first conveying belt, and each resistivity testing station adopts a four-probe module to test the resistivity of the high-resistance silicon wafers on the corresponding second conveying belt; the combined type testing device further comprises a belt rotating mechanism which is respectively connected with the discharging end of the first conveying belt and the feeding end of the second conveying belt so as to transfer the high-resistance silicon wafers subjected to the thickness test to the two second conveying belts one by one.

3. The combined testing device capable of realizing the automatic sorting of the high-resistance silicon wafers as claimed in claim 1, wherein the resistivity testing platform is provided with two sides which are symmetrically arranged at the downstream of the conveying belt, and the combined testing device further comprises a belt rotating mechanism which is arranged at the downstream of the conveying belt and is used for transferring the high-resistance silicon wafers after the thickness test to the resistivity testing platform one by one.

4. The combined type testing device capable of realizing the automatic sorting of the high-resistance silicon wafers as claimed in claim 1, wherein the thickness testing platform comprises a first mounting platform (301) assembled on the cabinet; the thickness measuring device comprises a first supporting seat (302) assembled on a first mounting platform, wherein an upper thickness measuring probe (303) and a lower thickness measuring probe which are oppositely arranged are arranged on the first supporting seat, the upper thickness measuring probe and the lower thickness measuring probe are respectively positioned at two sides of an upstream conveying belt, and the upper part of the first supporting seat is also provided with a protective cover (305) for covering the upper thickness measuring probe; and the first jacking mechanism (304) is assembled on the first mounting platform and is used for driving the high-resistance silicon wafer on the conveying belt to move upwards for thickness testing and driving the high-resistance silicon wafer to move downwards onto the conveying belt after the thickness testing is finished.

5. The combined type testing device capable of realizing the automatic sorting of the high-resistance silicon wafers as claimed in claim 4, wherein the first jacking mechanism comprises a first driving motor (3042) and a first bearing table (3043), the first driving motor (3042) is assembled on the first mounting platform (301), an output shaft of the first driving motor is connected with the first bearing table (3043) through a cam transmission mechanism, two sides of the first bearing table are assembled on the first mounting platform in a sliding manner, and the first bearing table is positioned between an upward conveying belt and a lower thickness measuring probe in an initial state; a first through hole (30431) penetrates through the first bearing table (3043), and a connection line of the upper thickness measuring probe and the lower thickness measuring probe penetrates through the first through hole.

6. The combined type testing device capable of realizing the automatic sorting of the high-resistance silicon wafers as claimed in claim 1, wherein the resistivity testing platform comprises a second mounting platform (401) assembled on the cabinet; a second supporting seat (402) assembled on the second mounting platform, wherein the second supporting seat is slidably assembled with four probe modules (403) positioned at the upper side of the upward conveying belt; the second jacking mechanism (404) is assembled on the second mounting platform and used for driving the high-resistance silicon wafer on the conveying belt to move upwards for resistivity test and driving the high-resistance silicon wafer to move downwards to the second conveying belt after the resistivity test is finished; and the centering and positioning mechanism is assembled on the second mounting platform and used for forming abutting fit with the high-resistance silicon wafer after the high-resistance silicon wafer moves upwards to a certain position so as to realize centering and positioning and releasing the abutting fit after the resistivity test is finished so as to allow the high-resistance silicon wafer to move downwards.

7. The combined testing device capable of realizing the automatic sorting of the high resistance silicon wafers as claimed in claim 6, wherein the second jacking mechanism comprises a second driving mechanism and a second bearing platform (4042), the second driving mechanism is assembled on the second mounting platform, the output end of the second driving mechanism is connected with the bearing platform, the bottom of the bearing platform is provided with a guide pillar (40431) extending along the vertical direction, a guide sleeve (40432) in sliding fit with the guide pillar is arranged on the second mounting platform, and the second bearing platform is located at the lower side of the upward conveying belt in the initial state.

8. The combined testing device capable of realizing the automatic sorting of the high resistance silicon wafers as claimed in claim 6, wherein the centering and positioning mechanism comprises a third driving mechanism, a guide plate (4053), a first slide carriage (40551) and a second slide carriage (40552), the guide plate is assembled on the second mounting platform, a mounting chamber is formed between the guide plate and the second mounting platform, the first slide carriage and the second slide carriage are slidably assembled on the second mounting platform and are located in the mounting chamber, and the output end of the third driving mechanism is connected with the first slide carriage and the second slide carriage respectively; the guide plate is provided with a through hole which is positioned below the four probe modules and is used for the output end of the jacking mechanism to pass through, one side of the through hole is provided with at least one guide groove (40531), and the other side of the through hole is provided with at least two guide grooves (40531); a positioning column (4052) penetrates through each guide groove, the lower end of the positioning column positioned on one side of the through hole is arranged on the first sliding seat in a sliding mode, the lower end of the positioning column positioned on the other side of the through hole is arranged on the second sliding seat in a sliding mode, and each positioning column protrudes out of the upper end of the guide plate and is used for being in butt fit with the high-resistance silicon wafer.

9. The combined testing device capable of realizing the automatic sorting of the high-resistance silicon wafers as claimed in claim 6, wherein the second mounting platform is further provided with a shielding cover (406) covering the four-probe module, the second jacking mechanism and the centering mechanism.

10. A sorter comprising a feed station, a sorting station and further comprising a combined testing device according to any one of claims 1 to 9, wherein the feed end of the conveyor belt is engaged with the feed station and the discharge end thereof is engaged with the sorting station.