CN215452905U - Acoustic surface wave resonator - Google Patents
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- CN215452905U CN215452905U CN202121878161.2U CN202121878161U CN215452905U CN 215452905 U CN215452905 U CN 215452905U CN 202121878161 U CN202121878161 U CN 202121878161U CN 215452905 U CN215452905 U CN 215452905U
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Abstract
The present invention provides a surface acoustic wave resonator, including: a piezoelectric layer; the first metal film layer is positioned on one side of the piezoelectric layer, and comprises an interdigital transducer and a signal transmitter, and the signal transmitter is connected with the interdigital transducer; the first temperature compensation film layer is positioned on one side, far away from the piezoelectric layer, of the interdigital transducer, covers the interdigital transducer, and does not cover the signal transmitter; the barrier layer is positioned on one side, far away from the piezoelectric layer, of the first temperature compensation film layer, covers the first temperature compensation film layer, and does not cover the signal transmitter. The surface acoustic wave resonator provided by the embodiment of the invention can realize the zero temperature coefficient of the surface acoustic wave filter, so that the surface acoustic wave filter can stably work in the full temperature range.
Description
Technical Field
The invention relates to the field of communication, in particular to a surface acoustic wave resonator.
Background
With the rapid development of mobile communication technology, the technology has been developed from the first 2G to 3G, and then to the present 4G and 5G. The functions and frequency bands of the handheld terminal equipment are more and more. Such as: the global mobile communication system, the time division synchronous code division multiple access, the wideband code division multiple access, the long term evolution technology, the global positioning system, the Bluetooth, the WiFi and other different functions are combined on one product, the product design and the mass production are challenged, the frequency resources are more and more crowded, the guard interval between frequency bands of different communication systems is more and more small, more strict requirements are provided for the frequency spectrum and the power of a transmitting end of each system, and the transmitting signals are ensured to have higher linearity and the transmitting power cannot be increased randomly to increase the communication distance or the reliability. Meanwhile, the environment of the receiving end is worse, especially for smaller and smaller mobile products, the interference is increased, and the receiving sensitivity and the anti-interference capability must be enhanced.
As a surface acoustic wave filter, which is a main device for filtering radio frequency signals, a high-precision spectrum control technology that meets new requirements of system development, such as temperature stability, has to be provided. Designing surface acoustic wave filters that operate normally over a wide temperature range has become a key to the current development of surface acoustic wave filter technology.
Disclosure of Invention
The surface acoustic wave resonator provided by the embodiment of the invention can realize the zero temperature coefficient of the surface acoustic wave filter, so that the surface acoustic wave filter can stably work in the full temperature range.
An embodiment of the present invention provides a surface acoustic wave resonator, including:
a piezoelectric layer;
the first metal film layer is positioned on one side of the piezoelectric layer, and comprises an interdigital transducer and a signal transmitter which is connected with the interdigital transducer;
a first temperature compensation film layer located on a side of the interdigital transducer away from the piezoelectric layer, the first temperature compensation film layer covering the interdigital transducer, and the first temperature compensation film layer not covering the signal transmitter;
a barrier layer located on a side of the first temperature compensation film layer away from the piezoelectric layer, the barrier layer covering the first temperature compensation film layer and not covering the signal transmitter;
a second temperature compensation film layer located on a side of the barrier layer away from the piezoelectric layer, the second temperature compensation film layer covering the barrier layer and not covering the signal transmitter;
the second metal film layer is positioned on one side, far away from the piezoelectric layer, of the signal transmitter, and the second metal film layer covers the signal transmitter.
Optionally, the surface acoustic wave resonator provided in the embodiment of the present invention further includes:
the first medium layer is positioned on one side, far away from the piezoelectric layer, of the interdigital transducer, covers the interdigital transducer, and does not cover the signal transmitter;
the second dielectric layer is positioned between the first dielectric layer and the first temperature compensation film layer, covers the first dielectric layer and does not cover the signal transmitter;
and the third dielectric layer is positioned on one side of the second temperature compensation film layer far away from the piezoelectric layer, covers the second temperature compensation film layer and does not cover the second metal film layer.
Optionally, the maximum thickness of the first temperature compensation film layer includes 0.5-1 μm.
Optionally, the thickness of the first dielectric layer comprises 10-50 nm;
the thickness of the second dielectric layer is 10-50 nm.
Optionally, the thickness of the piezoelectric layer comprises 0.1-0.15 mm.
Optionally, the thickness of the barrier layer includes 10-50 nm.
The embodiment of the invention provides a surface acoustic wave resonator, wherein a first temperature compensation film layer is arranged on one side, away from a piezoelectric layer, of a first metal film layer, so that the temperature tolerance of the surface acoustic wave resonator can be improved, the surface acoustic wave resonator can work at a larger range of temperature, a barrier layer covers one side, away from the piezoelectric layer, of the first temperature compensation film layer, and can block migration of partial elements in the first temperature compensation film layer, so that the stability of the first temperature compensation film layer is improved, a second temperature compensation film layer is arranged on one side, away from the first temperature compensation film layer, of the barrier layer, the temperature coefficient of the surface acoustic wave resonator can be further reduced, and finally, a zero temperature coefficient is realized. The signal transmitter is connected with the interdigital transducer and is covered by the second metal film layer, so that the signal transmitter receives information detected by the interdigital transducer and then transmits the information to other equipment through the second metal film layer. The surface acoustic wave resonator provided by the embodiment of the invention can realize the zero temperature coefficient of the surface acoustic wave filter, so that the surface acoustic wave filter can stably work in the full temperature range.
Drawings
Fig. 1 is a schematic structural diagram of a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 2 is a diagram of a measurement result of a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 3 is a diagram of a relationship between a surface acoustic wave resonator provided in an embodiment of the present invention and a relative bandwidth of an actually measured resonator under different duty ratios;
fig. 4 is a graph of measured temperature coefficient values of the surface acoustic wave resonator provided by the embodiment of the present invention under different duty ratios;
fig. 5 is a schematic flowchart of a method for manufacturing a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 18 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 19 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 20 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad invention. It should be further noted that, for convenience of description, only some structures, not all structures, relating to the embodiments of the present invention are shown in the drawings.
Fig. 1 is a schematic structural diagram of a surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 1, the surface acoustic wave resonator includes a piezoelectric layer 110; a first metal film layer 120, wherein the first metal film layer 120 is located on one side of the piezoelectric layer 110, the first metal film layer 120 includes an interdigital transducer 121 and a signal transmitter 122, and the signal transmitter 122 is connected to the interdigital transducer 121; a first temperature compensation film layer 130, the first temperature compensation film layer 130 being located on a side of the interdigital transducer 121 away from the piezoelectric layer 110, the first temperature compensation film layer 130 covering the interdigital transducer 121, and the first temperature compensation film layer 130 not covering the signal transmitter 122; a barrier layer 140, the barrier layer 140 being located on a side of the first temperature compensation film layer 130 away from the piezoelectric layer 110, the barrier layer 140 covering the first temperature compensation film layer 130, and the barrier layer 140 not covering the signal transmitter 122; a second temperature compensation film layer 150, wherein the second temperature compensation film layer 150 is located on a side of the barrier layer 140 away from the piezoelectric layer 110, the second temperature compensation film layer 150 covers the barrier layer 140, and the second temperature compensation film layer 150 does not cover the signal transmitter 122; and a second metal film layer 160, wherein the second metal film layer 160 is located on the side of the signal transmitter 122 away from the piezoelectric layer 110, and the second metal film layer 160 covers the signal transmitter 122.
Specifically, the material of the piezoelectric layer 110 may be lithium tantalate, lithium niobate, quartz, or the like. The material of the first metal film layer 120 includes titanium, chromium, copper, silver, aluminum, platinum, or a combination thereof. The material of the second metal film layer 160 also includes titanium, chromium, copper, silver, aluminum, platinum, or a combination thereof. The first temperature compensation film 130 includes a material having a positive temperature coefficient, the material of the first temperature compensation film 130 may be silicon oxyfluoride, and the blocking layer 140 is used to prevent migration of some elements in the first temperature compensation film 130, for example, when the material of the first temperature compensation film 130 is silicon oxyfluoride, the blocking layer 140 may block migration of fluorine elements, thereby ensuring that the first temperature compensation film 130 can normally operate. The material of the second temperature compensation film layer 150 includes silicon dioxide or germanium dioxide, the second temperature compensation film layer 150 can play a role in temperature compensation and can also be used for adjusting the bandwidth of the surface acoustic wave resonator, because the surface acoustic wave filter includes the surface acoustic wave resonator, the purposes of improving the consistency of the surface acoustic wave filter and reducing the temperature coefficient are also achieved, fig. 2 is an actual measurement result diagram of the surface acoustic wave resonator provided by the embodiment of the present invention, referring to fig. 2, the ordinate in fig. 2 represents the admittance amplitude, and the abscissa in fig. 2 represents the frequency, which can be obtained from fig. 2, the relative bandwidth of the surface acoustic wave resonator provided by the present embodiment reaches 4.2%, and as can be seen from fig. 2, the inner curve of the surface acoustic wave resonator provided by the present embodiment is smooth, and has no clutter mode. Fig. 3 is a relationship diagram of relative bandwidths of the surface acoustic wave resonator provided by the embodiment of the present invention and the actually measured resonator under different duty ratios, and referring to fig. 3, when the duty ratio is above 0.5, the relative bandwidth of the surface acoustic wave resonator provided by the embodiment is greater than 4%, which is larger than the bandwidth of the conventional surface acoustic wave resonator, and a larger bandwidth is realized. The signal transmitter 122 is respectively connected to the interdigital transducer 121 and the second metal film layer 160, and is configured to transmit information detected by the interdigital transducer 121 to the second metal film layer 160, and the second metal film layer 160 transmits the information to other devices. Fig. 4 is a graph of actually measured temperature coefficients of the surface acoustic wave resonator provided in the embodiment of the present invention at different duty ratios, and referring to fig. 4, when the duty ratio of the surface acoustic wave resonator is in the range of 0.4 to 0.55, the temperature coefficient of the surface acoustic wave resonator provided in this embodiment is in the range of-6 to +8ppm/K, and compared with the temperature coefficient of the conventional temperature compensation type surface acoustic wave filter in the range of-15 ppm/K to-25 ppm/K, the temperature coefficient of the surface acoustic wave resonator provided in this embodiment can reach 0, thereby ensuring that the temperature coefficient of the surface acoustic wave filter including the surface acoustic wave resonator provided in the embodiment of the present invention reaches 0. The surface acoustic wave resonator provided by the embodiment can normally work in a larger temperature range, so that the temperature dependence of the surface acoustic wave filter is reduced.
The embodiment of the invention provides a surface acoustic wave resonator, wherein a first temperature compensation film layer is arranged on one side, away from a piezoelectric layer, of a first metal film layer, so that the temperature tolerance of the surface acoustic wave resonator can be improved, the surface acoustic wave resonator can work at a larger range of temperature, a barrier layer covers one side, away from the piezoelectric layer, of the first temperature compensation film layer, and can block migration of partial elements in the first temperature compensation film layer, so that the stability of the first temperature compensation film layer is improved, a second temperature compensation film layer is arranged on one side, away from the first temperature compensation film layer, of the barrier layer, the temperature coefficient of the surface acoustic wave resonator can be further reduced, and finally, a zero temperature coefficient is realized. The signal transmitter is connected with the interdigital transducer and is covered by the second metal film layer, so that the signal transmitter receives information detected by the interdigital transducer and then transmits the information to other equipment through the second metal film layer. Because the filter is composed of the resonators, the surface acoustic wave resonator provided by the embodiment of the invention can realize the zero temperature coefficient of the surface acoustic wave filter, so that the surface acoustic wave filter can stably work in the full temperature range.
Optionally, with continued reference to fig. 1, the saw resonator further includes a first dielectric layer 170, the first dielectric layer 170 is located on a side of the interdigital transducer 121 away from the piezoelectric layer 110, the first dielectric layer 170 covers the interdigital transducer 121, and the first dielectric layer 170 does not cover the signal transmitter 122; a second dielectric layer 180, the second dielectric layer 180 being located between the first dielectric layer 170 and the first temperature compensation film layer 130, the second dielectric layer 180 covering the first dielectric layer 170, and the second dielectric layer 180 not covering the signal transmitter 122; and the third dielectric layer 190, the third dielectric layer 190 is located on the side of the second temperature compensation film layer 150 far away from the piezoelectric layer 110, the third dielectric layer 190 covers the second temperature compensation film layer 150, and the third dielectric layer 190 does not cover the second metal film layer 160.
Specifically, the arrangement of the first dielectric layer 170 and the second dielectric layer 180 improves the power tolerance of the surface acoustic wave resonator provided in this embodiment, also improves the power tolerance of a filter including the surface acoustic wave resonator provided in this embodiment of the present invention, and prevents the surface acoustic wave filter from being burned out due to a large power, so as to further prolong the service life of the surface acoustic wave filter, in addition, the first dielectric layer 170 and the second dielectric layer 180 are also used to prevent migration of some elements in the first temperature compensation film layer 130, for example, when the first temperature compensation film layer 130 is made of silicon oxyfluoride, the first dielectric layer 170 and the second dielectric layer 180 can block migration of fluorine elements, so as to ensure that the first temperature compensation film layer 130 can normally operate. The third dielectric layer 190 may be made of silicon nitride, the third dielectric layer 190 is used to protect the second temperature compensation film 150 from moisture in the air, and the third dielectric layer 190 is also used to adjust the operating frequency of the surface acoustic wave resonator, so as to improve the yield of the product.
Optionally, with continued reference to fig. 1, the material of the first temperature compensation film 130 includes silicon oxyfluoride; the maximum thickness h of the first temperature compensation film 130 is 0.5 to 1 μm.
Specifically, the maximum thickness of the first temperature compensation film layer 130 represents the maximum distance h from the surface of the first temperature compensation film layer 130 far away from the piezoelectric layer 110 to the surface close to the piezoelectric layer 110, the first temperature compensation film layer 130 is made of silicon oxyfluoride, and the maximum thickness h of the first temperature compensation film layer 130 is set within the range of 0.5-1 μm, so that the temperature tolerance of the surface acoustic wave resonator can be improved, and the temperature tolerance of the surface acoustic wave filter can be further improved.
Optionally, the material of the first dielectric layer comprises silicon dioxide, and the thickness of the first dielectric layer comprises 10-50 nm; the material of the second dielectric layer comprises silicon dioxide, germanium dioxide or aluminum oxide, and the thickness of the second dielectric layer comprises 10-50 nm.
Specifically, the thickness of the first dielectric layer is controlled to be 10-50 nm, the thickness of the second dielectric layer is controlled to be 10-50 nm, the material selected for the first dielectric layer comprises silicon dioxide, the material for the second dielectric layer comprises silicon dioxide, germanium dioxide or aluminum oxide, the power tolerance of the surface acoustic wave resonator provided by the embodiment of the invention can be improved, the power tolerance of the filter comprising the surface acoustic wave resonator provided by the embodiment of the invention is also improved, the surface acoustic wave filter is prevented from being burnt out due to higher power, the service life of the surface acoustic wave filter is further prolonged, the first dielectric layer and the second dielectric layer can also prevent migration of partial elements in the first temperature compensation film layer, and exemplarily, when the material of the first temperature compensation film layer is silicon oxyfluoride, the first dielectric layer and the second dielectric layer can block migration of fluorine elements, thereby ensuring that the first temperature compensation film layer can work normally.
Optionally, the thickness of the piezoelectric layer comprises 0.1-0.15 mm.
Specifically, the thickness of the piezoelectric layer is set within the range of 0.1-0.15 mm, so that the volume of the surface acoustic wave resonator can be reduced, and the surface acoustic wave resonator is miniaturized.
Optionally, the material of the barrier layer comprises aluminum oxide; the thickness of the barrier layer is 10-50 nm.
In addition, the alumina is low in cost, materials are easy to obtain, the manufacturing cost of the surface acoustic wave resonator can be reduced, and the manufacturing cost of the surface acoustic wave filter is further reduced.
Fig. 5 is a schematic flowchart of a manufacturing method of a surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 5, the manufacturing method of a surface acoustic wave resonator according to the embodiment includes:
s210, providing a piezoelectric layer.
And S220, forming a first metal film layer on one side of the piezoelectric layer, wherein the first metal film layer comprises an interdigital transducer and a signal transmitter, and the signal transmitter is connected with the interdigital transducer.
S230, sequentially forming a first temperature compensation film layer, a barrier layer and a second temperature compensation film layer on one side, far away from the piezoelectric layer, of the first metal film layer; the first temperature compensation film layer covers the interdigital transducer, the barrier layer covers the temperature compensation layer, the second temperature compensation film layer covers the barrier layer, and the first temperature compensation film layer, the barrier layer and the second temperature compensation film layer do not cover the signal transmitter.
And S240, forming a second metal film layer on one side, far away from the piezoelectric layer, of the signal transmitter, wherein the second metal film layer covers the signal transmitter.
Optionally, sequentially forming the first temperature compensation film layer, the barrier layer and the second temperature compensation film layer on the side of the first metal film layer away from the piezoelectric layer includes: forming a first temperature compensation transition film layer on one side of the first metal film layer, which is far away from the piezoelectric layer; forming a blocking transition layer on one side of the first temperature compensation transition film layer, which is far away from the piezoelectric layer; forming a second temperature compensation transition film layer on one side of the barrier transition layer far away from the piezoelectric layer; and etching the second temperature compensation transition film layer, the barrier transition layer and the first temperature compensation transition film layer until the surface of the signal transmitter far away from the piezoelectric layer is completely exposed, wherein the etched second temperature compensation transition film layer is the second temperature compensation film layer, the etched barrier transition layer is the barrier layer and the etched first temperature compensation transition film layer is the first temperature compensation film layer.
Optionally, forming a first temperature compensation transition film layer on a side of the first metal film layer away from the piezoelectric layer specifically includes: inputting mixed gas into the vacuum chamber to form a temperature compensation material film layer, wherein the mixed gas comprises Ar and SiH4、Sif4And N2O; and carrying out mechanochemical polishing on the temperature compensation material film layer, so that the surface of the temperature compensation material film layer after the mechanochemical polishing is far away from the piezoelectric layer is flush, and a first temperature compensation transition film layer is formed.
Optionally, before forming the first temperature compensation transition film layer on the side of the first metal film layer away from the piezoelectric layer, the method further includes: forming a first medium transition layer on one side of the first metal film layer far away from the piezoelectric layer; forming a second medium transition layer on one side of the first medium transition layer, which is far away from the piezoelectric layer; forming a first temperature compensation transition membrane layer on a side of the first metal membrane layer away from the piezoelectric layer includes: forming a first temperature compensation transition film layer on one side of the second medium transition layer far away from the piezoelectric layer; the etching of the second temperature compensation transition film layer, the blocking transition layer and the first temperature compensation transition film layer until the surface of the signal transmitter far away from the piezoelectric layer is completely exposed specifically comprises: etching the first dielectric transition layer, the second temperature compensation transition film layer, the barrier transition layer and the first temperature compensation transition film layer until the surface of the signal transmitter, which is far away from the piezoelectric layer, is completely exposed, wherein the etched first dielectric transition layer is the first dielectric layer, and the etched second dielectric transition layer is the second dielectric layer; after the second metal film layer is formed on the side of the signal transmitter far away from the piezoelectric layer, the method further comprises the following steps: forming a third medium transition layer on one side of the second temperature compensation film layer far away from the piezoelectric layer; and etching the third medium transition layer until the surface of the second metal film layer far away from the signal transmitter is completely exposed, wherein the etched third medium transition layer is a third medium layer.
It should be noted that, in the method for manufacturing the surface acoustic wave resonator provided in the foregoing embodiment, the first metal film layer, the first dielectric layer, the second dielectric layer, the first temperature compensation film layer, the barrier layer, the second temperature compensation film layer, the second metal film layer, and the third dielectric layer are manufactured on one side of the piezoelectric layer, so as to manufacture the surface acoustic wave resonator provided in the embodiment of the present invention, in order to manufacture a surface acoustic wave resonator with better performance, the piezoelectric layer may be replaced by the piezoelectric transition layer, and in the following embodiment, the piezoelectric transition layer is used to replace the piezoelectric layer as an example for detailed description.
A piezoelectric transition layer is provided. Fig. 6 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 6, before forming a first metal film layer on the side of the piezoelectric transition layer 111, a first photoresist layer 210 needs to be coated on the side of the piezoelectric transition layer 111, where the first photoresist layer 210 is used to prevent other contaminants from contaminating the surface of the piezoelectric transition layer 111. Fig. 7 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention, and referring to fig. 7, a metal reflective layer 220 is formed on a side of the piezoelectric transition layer 111 away from the first photoresist layer, and then the first photoresist layer is removed. Fig. 8 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention, and referring to fig. 8, a second photoresist layer is coated on a side of the piezoelectric transition layer 111 away from the metal reflection layer 220, the second photoresist layer is exposed, baked, developed, and hardened to form a first photoresist pattern layer 230, and the first photoresist pattern layer 230 includesThe included angle θ between the side surface of each first photoresist pattern 231 and the surface of the first photoresist pattern 231 near the piezoelectric transition layer 111 is greater than 90 °. Fig. 9 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 9, a metal material is deposited on the piezoelectric transition layer 111 and the first photoresist pattern layer, and the metal material on the first photoresist pattern layer and the surface of the first photoresist pattern layer is removed to form a first metal film layer 120. The metal reflective layer 220 has a light-tight characteristic, the metal reflective layer 220 is disposed on one side of the piezoelectric transition layer 111, and when a first photoresist pattern layer is formed on one side of the piezoelectric transition layer 111 far away from the metal reflective layer 220, the accuracy of photolithography can be improved, and the etching effect is prevented from being affected by the light transmission of the piezoelectric transition layer 111. Fig. 10 is a schematic structural diagram of a surface acoustic wave resonator according to another embodiment of the present invention, and referring to fig. 10, a first dielectric transition layer 171 is formed on a side of the first metal film layer 120 away from the piezoelectric transition layer 111 by a plasma enhanced chemical vapor deposition method. Fig. 11 is a schematic structural diagram of a surface acoustic wave resonator according to another embodiment of the present invention, and referring to fig. 11, a second dielectric transition layer 181 is formed on a side of the first dielectric transition layer 171 away from the piezoelectric transition layer 111 by using a plasma enhanced chemical vapor deposition method. Fig. 12 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 12, a temperature compensation material film 131 is formed on a side of the second dielectric transition layer 181 away from the piezoelectric transition layer 111, where the forming of the temperature compensation material film 131 specifically includes: controlling the temperature in the chamber to be 250 ℃, controlling the power of the film coating machine to be within 130-280W, controlling the pressure in the chamber to be 1.4Torr, controlling the Ar flow input into the chamber to be 375-1000 sccm, and inputting SiH into the chamber4The flow rate of (2) comprises 10sccm, and SiF is input into the chamber4Comprises a flow of 40sccm, N is input into the chamber2The flow rate of O is in the range of 300-1000 sccm, and the temperature, power and pressure of the coating film, Ar and SiH are controlled4、Sif4、N2The flow rate ratio of O and other gases, thereby controlling the stress of the temperature compensation material film 131 and preventing the piezoelectric material film 131 from being too stressed to cause piezoelectricThe deformation of the transition layer 111 can also be controlled by controlling the fluorine content in the fluorinated silica, and the fluorine content ratio is not too high, preferably in the range of 2% to 4%. Fig. 13 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 13, a planarization and thinning process is performed on a temperature compensation material film layer by using a mechanochemical polishing method to form a first temperature compensation transition film layer 132. Fig. 14 is a schematic structural diagram of a surface acoustic wave resonator according to another embodiment of the present invention, and referring to fig. 14, a blocking transition layer 141 is formed on a side of the first temperature compensation transition film layer 132 away from the piezoelectric transition layer 111. Fig. 15 is a schematic structural view of a surface acoustic wave resonator according to another embodiment of the present invention, and referring to fig. 15, a second temperature compensation transition film layer 151 is formed on a side of the blocking transition layer 141 away from the piezoelectric transition layer 111. Fig. 16 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention, referring to fig. 16, a third photoresist layer is formed on a side of the second temperature compensation transition film layer away from the piezoelectric transition layer 111, the third photoresist layer is masked, exposed and developed to form a second photoresist pattern layer, and the first dielectric transition layer, the second temperature compensation transition film layer, the blocking transition layer and the first temperature compensation transition film layer are etched until the surface of the signal transmitter away from the piezoelectric transition layer is completely exposed, where fig. 16 is a schematic structural diagram of a surface acoustic wave resonator in which the first dielectric layer 170, the second dielectric layer 180, the second temperature compensation film layer 150, the blocking layer 140 and the first temperature compensation film layer 130 are formed. Fig. 17 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention, and referring to fig. 17, a second metal film 160 is formed on a side of the signal transmitter 122 away from the piezoelectric transition layer 111, the second metal film 160 covers the signal transmitter 122, and a surface of the second metal film 160 away from the piezoelectric transition layer 111 may be flush with a surface of the second temperature compensation film 150 away from the piezoelectric transition layer 111. Fig. 18 is a schematic structural diagram of a surface acoustic wave resonator according to another embodiment of the present invention, and referring to fig. 18, a third dielectric transition layer 191 is formed on a side of the second temperature compensation film layer 150 away from the piezoelectric transition layer 111. FIG. 19 is a schematic structural diagram of another SAW resonator according to an embodiment of the present inventionReferring to fig. 19, the third dielectric transition layer is etched until the surface of the second metal film layer 160 away from the signal transmitter 122 is completely exposed, and the etched third dielectric transition layer is a third dielectric layer 190. Fig. 20 is a schematic structural view of another saw resonator according to an embodiment of the present invention, and referring to fig. 20, the metal reflective layer is removed. With reference to fig. 1, the piezoelectric transition layer is thinned to form the piezoelectric layer 110, and fig. 1 may show a schematic structural diagram of the surface acoustic wave resonator after the piezoelectric transition layer is thinned.
The method for manufacturing the surface acoustic wave resonator provided by the embodiment belongs to the same inventive concept as the surface acoustic wave resonator provided by any embodiment of the invention, has corresponding beneficial effects, and does not detail the technical details in the embodiment, and details the surface acoustic wave resonator provided by any embodiment of the invention.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. Those skilled in the art will appreciate that the embodiments of the present invention are not limited to the specific embodiments described herein, and that various obvious changes, adaptations, and substitutions are possible, without departing from the scope of the embodiments of the present invention. Therefore, although the embodiments of the present invention have been described in more detail through the above embodiments, the embodiments of the present invention are not limited to the above embodiments, and many other equivalent embodiments may be included without departing from the concept of the embodiments of the present invention, and the scope of the embodiments of the present invention is determined by the scope of the appended claims.
Claims (6)
1. A surface acoustic wave resonator, comprising:
a piezoelectric layer;
the first metal film layer is positioned on one side of the piezoelectric layer, and comprises an interdigital transducer and a signal transmitter which is connected with the interdigital transducer;
a first temperature compensation film layer located on a side of the interdigital transducer away from the piezoelectric layer, the first temperature compensation film layer covering the interdigital transducer, and the first temperature compensation film layer not covering the signal transmitter;
a barrier layer located on a side of the first temperature compensation film layer away from the piezoelectric layer, the barrier layer covering the first temperature compensation film layer and not covering the signal transmitter;
a second temperature compensation film layer located on a side of the barrier layer away from the piezoelectric layer, the second temperature compensation film layer covering the barrier layer and not covering the signal transmitter;
the second metal film layer is positioned on one side, far away from the piezoelectric layer, of the signal transmitter, and the second metal film layer covers the signal transmitter.
2. The surface acoustic wave resonator according to claim 1, further comprising:
the first medium layer is positioned on one side, far away from the piezoelectric layer, of the interdigital transducer, covers the interdigital transducer, and does not cover the signal transmitter;
the second dielectric layer is positioned between the first dielectric layer and the first temperature compensation film layer, covers the first dielectric layer and does not cover the signal transmitter;
and the third dielectric layer is positioned on one side of the second temperature compensation film layer far away from the piezoelectric layer, covers the second temperature compensation film layer and does not cover the second metal film layer.
3. The surface acoustic wave resonator according to claim 1, wherein a maximum thickness of the first temperature compensation film layer includes 0.5 to 1 μm.
4. The surface acoustic wave resonator according to claim 2, wherein a thickness of the first dielectric layer comprises 10 to 50 nm;
the thickness of the second dielectric layer is 10-50 nm.
5. A surface acoustic wave resonator according to claim 1, wherein a thickness of the piezoelectric layer comprises 0.1-0.15 mm.
6. The surface acoustic wave resonator according to claim 1, wherein a thickness of the barrier layer comprises 10 to 50 nm.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115296642A (en) * | 2022-10-08 | 2022-11-04 | 深圳新声半导体有限公司 | Surface acoustic wave resonator structure, forming method thereof and filter |
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