CN215338658U - MEMS sensing device and sensing detection circuit - Google Patents
MEMS sensing device and sensing detection circuit Download PDFInfo
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- CN215338658U CN215338658U CN202121630308.6U CN202121630308U CN215338658U CN 215338658 U CN215338658 U CN 215338658U CN 202121630308 U CN202121630308 U CN 202121630308U CN 215338658 U CN215338658 U CN 215338658U
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Abstract
The utility model provides a MEMS sensing device and a sensing detection circuit, the MEMS sensing device comprises: the detection circuit layer comprises a sensing resistance layer, and the voltage-dividing resistance doping layer is connected with the detection circuit layer in series. The resistance temperature coefficient of the sensing resistance layer is larger than that of the voltage-dividing resistance doping layer, so that the input voltage and the temperature of the detection circuit layer are in positive correlation. When the temperature rises, the input voltage of the detection circuit layer is further improved, the lifting amount generated by the input voltage of the detection circuit layer compensates the trend that the piezoelectric effect of the detection circuit layer weakens along with the temperature rise, finally, the output voltage of the MEMS sensing device can be effectively prevented from being reduced in high temperature, and the sensitivity of the MEMS sensing device is effectively prevented from being reduced in high temperature.
Description
Technical Field
The utility model relates to the technical field of sensors, in particular to a sensing detection circuit of an MEMS sensing device.
Background
MEMS (micro electro mechanical system) pressure sensors are the miniature sensors which are the earliest in development and have the highest market occupation rate, and the application field covers the aspects of daily production and life of people at present. And the core device in the MEMS sensor is a MEMS sensitive chip, and the MEMS sensitive chip comprises a piezoresistive MEMS pressure sensitive chip.
The piezoresistive MEMS pressure sensitive chip is prepared based on piezoresistive effect, and has the advantages of small volume and good consistency of batch production, and is prepared by adopting a semiconductor process. The piezoresistive effect means that the resistance value of the resistor changes under stress. The output voltage change of the piezoresistive MEMS pressure sensitive chip generated under the unit pressure change is the sensitivity. Sensitivity is the most basic performance parameter of a MEMS sensitive chip, and generally, the higher the sensitivity, the better the chip performance. With the development of sensor technology, the application range of the sensor is wider and wider, and the sensor can be applied to severe occasions such as high temperature, high pressure, corrosivity and the like. The performance of a conventional piezoresistive MEMS sensitive chip is greatly affected by temperature, because the effectiveness of piezoresistive effect changes with temperature, resulting in significant sensitivity change, which affects the calibration of the output of the chip to pressure.
However, the MEMS sensors in the prior art have poor sensitivity in high temperature operating environments.
SUMMERY OF THE UTILITY MODEL
Therefore, the technical problem to be solved by the present invention is how to effectively avoid the sensitivity reduction of the MEMS sensing device in a high temperature working environment.
The present invention provides a MEMS sensing device comprising: a substrate layer; the detection circuit layer is positioned on the substrate layer and comprises a sensing resistance layer; the voltage-dividing resistance doping layer is positioned on the substrate layer and is connected with the input end of the detection circuit layer in series, and the voltage-dividing resistance doping layer is used for adjusting the voltage of the input end of the detection circuit layer; the resistance temperature coefficient of the sensing resistance layer is larger than that of the voltage-dividing resistance doping layer.
Optionally, the sensing resistance layer has a positive resistance temperature coefficient, and the voltage-dividing resistance doping layer has a positive resistance temperature coefficient; or the sensing resistance layer has a positive resistance temperature coefficient, and the voltage-dividing resistance doping layer has a negative resistance temperature coefficient; or the sensing resistance layer has a negative resistance temperature coefficient, and the voltage-dividing resistance doping layer has a negative resistance temperature coefficient.
Optionally, the detection circuit layer has an opening penetrating through the detection circuit layer; the sensing resistor layer surrounds the opening.
Optionally, the conductivity type of the lead layer is the same as the conductivity type of the sensing resistor layer.
Optionally, the number of the sensing resistor layers is several, and the several sensing resistor layers are mutually separated; the voltage-dividing resistance doping layer is positioned on one side of a part of the sensing resistance layer back to the substrate layer.
Optionally, the detection circuit layer further includes: the lead layer is positioned on the side part of the sensing resistor layer and is adjacent to the sensing resistor layer; the MEMS sensing device further comprises: contact doping parts which are positioned on two sides of the voltage-dividing resistance doping layer and are adjacent to the voltage-dividing resistance doping layer; the first insulating layer is positioned on the surface of one side, back to the substrate layer, of the detection circuit layer; the partial pressure resistance doping layer and the contact doping part are positioned on one side, back to the pressure detection circuit layer, of the first insulating layer; and the first conductive connecting piece is positioned on part of the lead layer, penetrates through the first insulating layer and is connected with the contact doping part.
Optionally, the conductivity type of the voltage-dividing resistance doping layer is the same as the conductivity type of the contact doping portion.
Optionally, the material of the contact doping portion comprises doped polysilicon.
Optionally, the doping concentration of the conductive ions in the contact doping part is 1E19/cm3-1E22/cm 3.
Optionally, the conductivity type of the voltage-dividing resistance doped layer is the same as the conductivity type of the sensing resistance layer.
Optionally, the conductivity type of the voltage-dividing resistance doped layer and the conductivity type of the sensing resistance layer are both P-type.
Optionally, the material of the sensing resistor layer includes doped monocrystalline silicon.
Optionally, the material of the voltage-dividing resistance doping layer includes doped polysilicon.
Optionally, the doping concentration of the conductive ions in the sensing resistor layer is 1E14/cm3-1E22/cm 3.
Optionally, the doping concentration of the conductive ions in the voltage-dividing resistance doping layer is 1E14/cm3-1E18/cm 3.
Optionally, the voltage-dividing resistance doping layer and the detection circuit layer are arranged on the same layer.
Optionally, the substrate layer includes: the semiconductor device comprises a bottom semiconductor layer and an insulating medium layer positioned on the surface of the bottom semiconductor layer.
Optionally, the detection circuit layer and the voltage-dividing resistance doping layer are located on one side of the insulating medium layer, which faces away from the bottom semiconductor layer.
Optionally, the bottom semiconductor layer includes: the induction film layer is positioned on one side of the insulating medium layer, which is opposite to the detection circuit layer; the supporting part is provided with a through cavity and is positioned on one side of the induction film layer, which faces away from the insulating medium layer.
Optionally, the through cavity comprises a cavity bottom surface and a cavity side wall surrounding the cavity bottom; the included angle between the cavity side wall and the cavity bottom surface is a right angle or an obtuse angle.
Optionally, the substrate layer further includes: the glass substrate is arranged on one side, back to the induction film layer, of the supporting part; the glass substrate and the substrate layer are attached to enable the through cavity to form a closed structure, or a slotted hole is formed in the glass substrate and is located at the bottom of the through cavity and communicated with the through cavity.
Optionally, the MEMS sensing device includes a MEMS pressure sensitive chip; the detection circuit layer comprises a pressure detection circuit layer; the sensing resistor layer comprises a piezoresistive layer.
The present invention also provides a sensing detection circuit, comprising: a voltage dividing resistor; the detection module comprises a sensing resistor, the sensing resistor is electrically connected with the voltage dividing resistor, the input end of the detection module is connected with the voltage dividing resistor in series, and the voltage dividing resistor is used for adjusting the voltage of the input end of the detection module; the resistance temperature coefficient of the sensing resistor is larger than that of the voltage dividing resistor.
Optionally, the sensing resistor has a positive temperature coefficient of resistance, and the voltage dividing resistor has a positive temperature coefficient of resistance; or the sensing resistor has a positive resistance temperature coefficient, and the voltage dividing resistor has a negative resistance temperature coefficient; alternatively, the sensing resistor has a negative resistance temperature coefficient and the voltage dividing resistor has a negative resistance temperature coefficient.
Optionally, the number of the sensing resistors is multiple, the sensing resistors form a wheatstone bridge detection module, and the voltage dividing resistor is connected in series with the wheatstone bridge detection module.
Optionally, the sensing resistor includes: the sensing resistor comprises a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor; one end of the first sensing resistor is connected with one end of the voltage dividing resistor and one end of the fourth sensing resistor, and the other end of the first sensing resistor is connected with one end of the second sensing resistor and the first voltage output end; the other end of the second sensing resistor and one end of the third sensing resistor are electrically connected with a grounding end; one end of the third sensing resistor is connected with the other end of the fourth sensing resistor and the second voltage output end; the other end of the divider resistor is connected with a power signal.
The technical scheme of the utility model has the following advantages:
according to the MEMS sensing device provided by the technical scheme of the utility model, the resistance temperature coefficient of the sensing resistance layer is larger than that of the voltage-dividing resistance doping layer, so that the input voltage of the detection circuit layer is in positive correlation with the temperature, when the temperature rises, the input voltage of the detection circuit layer rises, and the lifting amount of the input voltage generated by the detection circuit layer compensates the trend that the piezoelectric effect of the detection circuit layer is weakened along with the rise of the temperature, so that the output voltage of the MEMS sensing device can be effectively prevented from being reduced at high temperature, and the sensitivity of the MEMS sensing device is effectively prevented from being reduced at high temperature.
Further, the surface of the substrate layer is provided with a device semiconductor layer, and the detection circuit layer is provided with an opening penetrating through the detection circuit layer; the sensing resistor layer surrounds the opening, and the opening is used for spatially separating part of the sensing resistor layers connected in parallel in the detection circuit layer, so that mutual influence of currents between the sensor resistor layers connected in parallel is prevented; the MEMS sensing device can effectively realize current crosstalk between the sensing resistor layers connected in parallel even at high temperature, and the sensitivity and the detection accuracy of the MEMS sensing device are further improved.
Furthermore, the voltage-dividing resistance doping layer is positioned on one side of a part of the sensing resistance layer back to the substrate layer, namely the voltage-dividing resistance doping layer and the sensing resistance layer are vertically stacked, so that the whole area of the chip can be reduced; secondly, as the materials of the voltage-dividing resistance doping layer and the sensing resistance layer can be selected from different materials, the material selection of the voltage-dividing resistance doping layer is not limited by the material selection of the sensing resistance layer, and correspondingly, the resistance temperature coefficient of the voltage-dividing resistance doping layer is not limited by the selection of the resistance temperature coefficient of the sensing resistance layer; and thirdly, the partial voltage resistance doping layer and the sensing resistance layer are made of proper materials, so that the etching selection ratio of the partial voltage resistance doping layer to the etching selection ratio of the sensing resistance layer to the etching selection ratio of the partial voltage resistance doping layer to the sensing resistance layer is improved, and the process difficulty is reduced.
In the sensing detection circuit provided by the technical scheme of the utility model, the resistance temperature coefficient of the sensing resistor is greater than that of the voltage dividing resistor, so that the input voltage of the detection module is in positive correlation with the temperature. When the temperature rises, the input voltage of the detection module is increased, the lifting amount of the input voltage of the detection module compensates the trend that the piezoelectric effect of the detection module weakens along with the rise of the temperature, finally, the output voltage of the sensing detection circuit can be effectively prevented from being reduced in high temperature, and the sensitivity of the sensing detection circuit is effectively prevented from being reduced in high temperature.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a MEMS sensing device according to an embodiment of the present invention;
FIG. 2 is a top view of a MEMS sensing device provided in accordance with an embodiment of the present invention;
FIG. 3 is an equivalent circuit diagram of a MEMS sensing device provided in accordance with an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a MEMS sensing device according to another embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a MEMS sensing device according to yet another embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a MEMS sensing device according to yet another embodiment of the present invention;
fig. 7 is a circuit diagram of a sensing circuit according to another embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides a MEMS sensing device 100, referring to fig. 1 and 2 in combination, including: a substrate layer 101; a detection circuit layer 102 located on the substrate layer 101, wherein the detection circuit layer 102 includes a sensing resistor layer 1021; the voltage-dividing resistance doping layer 104 is located on the substrate layer 101, the voltage-dividing resistance doping layer 104 is connected in series with an input end of the detection circuit layer 102, and the voltage-dividing resistance doping layer 104 is used for adjusting the voltage of the input end of the detection circuit layer 102; the temperature coefficient of resistance of the sensing resistance layer 1021 is larger than that of the voltage-dividing resistance doping layer 104.
In a specific embodiment, the sensing resistor layer 1021 has a positive temperature coefficient of resistance, the voltage-dividing resistance doping layer 104 has a positive temperature coefficient of resistance, and the temperature coefficient of resistance of the sensing resistor layer 1021 is greater than the temperature coefficient of resistance of the voltage-dividing resistance doping layer 104.
In another embodiment, the sensing resistor layer 1021 has a positive temperature coefficient of resistance, and the voltage-dividing resistance doping layer 104 has a negative temperature coefficient of resistance.
In another embodiment, the sensing resistor layer 1021 has a negative temperature coefficient of resistance, the voltage-dividing resistance-doped layer 104 has a negative temperature coefficient of resistance, and the temperature coefficient of resistance of the sensing resistor layer 1021 is greater than the temperature coefficient of resistance of the voltage-dividing resistance-doped layer 104.
In one specific embodiment, the temperature coefficient of resistance of the sensing resistor layer 1021 is in a range of-0.005/deg.C to 0.005/deg.C. The temperature coefficient of resistance of the voltage-dividing resistance doping layer 104 is-0.005/° C.
The temperature coefficient of resistance of the sensing resistor layer 1021 and the temperature coefficient of resistance of the voltage-dividing resistance doping layer 104 are related in that the temperature coefficient of resistance of the sensing resistor layer 1021 is greater than the temperature coefficient of resistance of the voltage-dividing resistance doping layer 104. Has the advantages that: the input voltage of the detection circuit layer 102 can be positively correlated with the rise of the temperature, and when the temperature rises, the input voltage of the detection circuit layer 102 can be increased, so that the increase of the input voltage of the detection circuit layer 102 can compensate the trend that the piezoelectric effect of the detection circuit layer 102 weakens along with the rise of the temperature, and finally, the output voltage of the MEMS sensing device can be effectively prevented from being reduced at high temperature, and the sensitivity of the MEMS sensing device can be effectively prevented from being reduced at high temperature.
The MEMS sensing device 100 includes a MEMS pressure sensitive chip. The MEMS pressure sensing chip is a thin film element. In this embodiment, when the MEMS sensing device 100 deforms under pressure, the sensing circuit layer 102 is a pressure sensing circuit layer, and the sensing resistor layer 1021 is a piezoresistive layer. In other embodiments, the MEMS sensing device may sense other signals from the outside to change the sensing resistor layer.
The detection circuit layer 102 has an opening 1023 penetrating the detection circuit layer 102; the sensing resistor layer 1021 surrounds the opening 1023. The substrate layer 101 has a device semiconductor layer 130 on a surface thereof. The detection circuit layer 102 is located in the device semiconductor layer 130.
In other embodiments, no opening may be provided in the detection circuit layer 102.
The detection circuit layer 102 includes a sensing resistor layer 1021 and a lead layer 1022. In this embodiment, the sensing resistor layers 1021 are piezoresistive layers, the number of the sensing resistor layers 1021 is several, and the sensing resistor layers 1021 are separated from each other. The lead layer 1022 is located at a side of the sensing resistor layer 1021 and is adjacent to the sensing resistor layer 1021. The lead layer 1022 and the sensing resistor layer 1021 surround the opening 1023.
The opening 1023 is used for spatially separating part of the parallel sensor resistance layers 1021 in the detection circuit layer, so as to prevent mutual influence of currents between the parallel sensor resistance layers 1021; the MEMS sensing device can effectively realize current crosstalk between the sensing resistor layers connected in parallel even at high temperature, and the sensitivity and the detection accuracy of the MEMS sensing device are further improved.
The lead layer 1022 has the same conductivity type as the conductive type of the sense resistor layer 1021. The material of the sensing resistance layer 1021 comprises doped monocrystalline silicon; the doping concentration of the conductive ions in the sensing resistance layer 1021 is 1E14/cm3-1E22/cm3。
When the opening 1023 is provided, the conduction type of the lead layer 1022 and the conduction type of the sense resistor layer 1021 are both N-type or P-type.
In other embodiments, the detection circuit layer is not provided with an opening, the sensing resistor layer has a P-type conductivity, the lead layer has a P-type conductivity, the sensing resistor layer has an N-type conductivity in the region surrounded by the sensing resistor layers, the sensing resistor layer and the lead layer form a PN junction, and the region surrounded by the sensing resistor layer and the lead layer is difficult to be conducted to the sensing resistor layer and the lead layer by utilizing the reverse bias cutoff performance of the PN junction, so that current crosstalk does not occur between the sensing resistor layers connected in parallel in the MEMS sensing device at low temperature, and current crosstalk does not occur between the lead layers connected in parallel.
In this embodiment, the MEMS sensing device 100 further includes a first insulating layer 103, and the first insulating layer 103 is located on a surface of the detection circuit layer 102 facing away from the substrate layer 101. The role of the first insulating layer 103 includes: the voltage-dividing resistance doping layer 104 and the sensing resistance layer 1021 are isolated, and the voltage-dividing resistance doping layer 104 is prevented from being in direct contact with the sensing resistance layer 1021; supporting the function of voltage-dividing resistance doped layer 104. The material of the first insulating layer 103 includes: one or a combination of two of silicon nitride or silicon oxide.
The voltage-dividing resistance doped layer 104 is located on the substrate layer 101. In this embodiment, the voltage-dividing resistance doped layer 104 is located on a side of the partial sensing resistance layer 1021 opposite to the substrate layer 101, which is beneficial in that: the voltage division resistance doping layer 104 and the sensing resistance layer 1021 are vertically stacked, so that the whole area of the chip can be reduced; secondly, since the materials of the voltage-dividing resistance doping layer 104 and the sensing resistance layer 1021 can be selected differently, the material selection of the voltage-dividing resistance doping layer 104 is not limited by the material selection of the sensing resistance layer 1021, and accordingly, the temperature coefficient of resistance of the voltage-dividing resistance doping layer 104 is not limited by the selection of the temperature coefficient of resistance of the sensing resistance layer 1021; thirdly, by selecting appropriate materials for the voltage-dividing resistance doping layer 104 and the sensing resistance layer 1021, in the process of preparing the voltage-dividing resistance doping layer 104 and the sensing resistance layer 1021, the etching selection ratio of the voltage-dividing resistance doping layer 104 and the sensing resistance layer 1021 is improved, and the process difficulty is reduced.
In other embodiments, the voltage-dividing resistance doping layer and the detection circuit layer are arranged on the same layer, which can reduce the thickness of the chip and flatten the chip.
In this embodiment, the material of the sensing resistor layer 1021 is selected from doped monocrystalline silicon, so that the temperature coefficient of resistance of the sensing resistor layer 1021 is positive; the lead layer 1022 with a higher doping concentration of conductive ions can lower the resistivity of the lead layer 1022, which can lower the resistance of the lead layer 1022 and facilitate the detection of the circuit conduction of the circuit layer 102.
In this embodiment, the conductive ions in the sensing resistor layer 1021 have a higher concentration, which may be the same as the conductive ions used in the lead layer 1022, and can be doped at the same time during the manufacturing process.
In other embodiments, the sensing resistor layer may use a smaller doping concentration of the conductive ions, and the doping concentration of the conductive ions in the sensing resistor layer is smaller than the doping concentration of the conductive ions in the lead layer, so that the resistivity of the sensing resistor layer is larger, and the area occupied by the sensing resistor layer is not too large when the sensing resistor layer within a certain resistance range is set, thereby improving the integration level of the MEMS sensing device. The material of the voltage-dividing resistance doping layer is doped polycrystalline silicon, the resistivity of the polycrystalline silicon is large relative to monocrystalline silicon, and the doping concentration of conductive ions in the voltage-dividing resistance doping layer is smaller than that of conductive ions in the sensing resistance layer, so that the conductivity of the voltage-dividing resistance doping layer is smaller than that of the sensing resistance layer, the occupied area of the voltage-dividing resistance doping layer is not too small when the voltage-dividing resistance doping layer within a certain resistance range is set, and the patterning difficulty of preparing the voltage-dividing resistance doping layer is reduced.
In this embodiment, the voltage-dividing resistance doping layer 104 has a suitable resistance temperature coefficient by doping, and the voltage-dividing resistance doping layer 104 has different doping concentrations, so that the voltage-dividing resistance doping layer 104 has different resistance temperature coefficients. The doping concentration explained in the process may be selected so that the voltage-dividing resistance-doped layer 104 has an appropriate temperature coefficient of resistance. In one embodiment, the doping concentration of the conductive ions in the voltage-dividing resistance doping layer 104 is 1E14/cm3-1E18/cm3。
When the material of the voltage-dividing resistance doping layer 104 is doped polysilicon, the doping concentration can be controlled, so that the resistance temperature coefficient of the voltage-dividing resistance doping layer 104 presents a negative resistance temperature coefficient.
In this embodiment, the MEMS sensing device 100 further includes a contact doping portion 105, the voltage-dividing resistance doping layer 104 and the contact doping portion 105 are located on a surface of the first insulating layer 103 on a side facing away from the detection circuit layer 102, and the contact doping portion 105 is located on two sides of the voltage-dividing resistance doping layer 104 and is adjacent to the voltage-dividing resistance doping layer 104; the contact doping portion 105 is used as a connection point of the voltage-dividing resistance doping layer 104 to be connected with the detection circuit layer 102.
The voltage-dividing resistance doped layer 104 is connected in series with the detection circuit layer 102, and specifically, the voltage-dividing resistance doped layer 104 is electrically connected with the lead layer 1022. This can reduce the contact resistance of the voltage-dividing resistance-doped layer 104 and the first conductive connection member 106 by the ion-heavily doped contact doping portion 105.
The conductivity type of the voltage-dividing resistance doping layer 104 is the same as the conductivity type of the contact doping portion 105; the material of the contact doping 105 comprises doped polysilicon; preferably, the doping concentration of the conductive ions in the contact doping part 105 is greater than the doping concentration of the conductive ions in the contact doping part 105. In a specific embodiment, this may reduce the contact resistance of the voltage-dividing resistance-doped layer 104 with the first conductive connection 106. The doping concentration of the conductive ions in the contact doping part 105 is 1E19/cm3-1E22/cm3。
In this embodiment, the MEMS sensing device 100 further includes a first conductive connecting element 106, the first conductive connecting element 106 is located on a portion of the lead layer 1022, and the first conductive connecting element 106 penetrates through the first insulating layer 103 and is connected to the contact doping portion 105, so that the voltage-dividing resistance doping layer 104 is electrically connected to the detection circuit layer 102. In one embodiment, the MEMS sensing device 100 further includes a second conductive connecting member 108, the first conductive connecting member 106 is located on a portion of the lead layer 1022, the first conductive connecting member 106 penetrates the first insulating layer 103, as seen in fig. 2, a portion of the second conductive connecting member 108 is used as a first voltage output terminal, and a portion of the second conductive connecting member 108 (lower left corner in fig. 2) is used for electrically connecting to a ground terminal.
In an embodiment, the MEMS sensing device 100 further includes a second insulating layer 107 disposed on a surface of the voltage-dividing resistance doped layer 104 facing away from the detection circuit layer 102 and adjacent to a side of the first conductive connection 106. Further, the second insulating layer 107 covers the entire surface of the voltage-dividing resistance doping layer 104 and extends to a portion of the top surface of the contact doping portion 105. The functions of the second insulating layer 107 include: the voltage-dividing resistance doped layer 104 and the first conductive connecting member 106 are isolated, and the first conductive connecting member 106 is prevented from being directly connected with the voltage-dividing resistance doped layer 104. The material of the second insulating layer 107 includes one or a combination of silicon oxide and silicon nitride.
The conductivity type of the voltage-dividing resistance doped layer 104 is the same as the conductivity type of the sensing resistance layer 1021.
In one embodiment, the conductivity type of the voltage-dividing resistance doped layer 104 and the conductivity type of the sensing resistance layer 1021 are both P-type. The stress distribution of the N-type sensing resistance layer is not uniform, a region needs to be etched on the back surface of the sensing film layer and a stress block needs to be filled in the region to change the stress distribution, so that the height fluctuation between the film layers is large during preparation, and the preparation flow is complex. The stress distribution of the P-type sensing resistance layer is uniform, the stress blocks do not need to be filled, the process preparation flow is simple, and the flatness of the sensing film layer is good.
Fig. 3 shows an equivalent circuit of the MEMS sensing device provided by the present invention. Fig. 3 illustrates the detection circuit layer 102 as a wheatstone bridge. The sensing resistors comprise a first sensing resistor R1, a second sensing resistor R2, a third sensing resistor R3 and a fourth sensing resistor R4, and the voltage dividing resistor Rp is electrically connected with the Wheatstone bridge. When the MEMS sensing device is stressed, the sensing film layer deforms, deformation information generated by the sensing film layer is transmitted to the first sensing resistor R1, the second sensing resistor R2, the third sensing resistor R3 and the fourth sensing resistor R4, and resistance values of the first sensing resistor R1, the second sensing resistor R2, the third sensing resistor R3 and the fourth sensing resistor R4 are changed.
The wheatstone bridge has a symmetrical structure, and for a fixed temperature, the overall resistance of the wheatstone bridge remains unchanged, and the resistance of the voltage dividing resistor Rp remains unchanged, so that the input voltage Vin1 of the wheatstone bridge remains unchanged, and Vin1 is Vs × R/(R + Rp), where R is the total resistance of the wheatstone bridge. When not under pressure, the initial values of R1-R4 are all R, and the equivalent resistance of the Wheatstone bridge is also R. Since the resistance value of R1 decreases with increasing pressure, the resistance value of R2 increases with increasing pressure, the resistance value of R3 decreases with increasing pressure, the resistance value of R4 increases with increasing pressure, the series resistance values of R1 and R2 do not change with pressure, and the series resistance values of R3 and R4 do not change with pressure, the total resistance of the Wheatstone bridge is constant with changing pressure.
For a fixed operating temperature, when compressed, Δ Vout1 is Vout+-Vout-Vin ((R2)/(R1+ R2) - (R3)/(R3+ R4)) -Vin ((R + a)/2R- (R-a)/2R ═ Vin a/R.a is the amount of resistance change caused when the sense resistance is subjected to pressure.
When the operating temperature increases, and when stressed, Δ Vout2 ═ Vout+-Vout-Vin ((R2)/(R1+ R2) - (R3)/(R3+ R4)) ═ Vin ((R "+ a)/2R" - (R "-a)/2R") ═ Vin a/R ", where R" ═ R (1+ k1 b), b is the temperature change, and k1 is the temperature coefficient of resistance of each sense resistor, so Δ vout2 ═ Vin a/R (1+ k1 b) ═ Vin c. c ═ a/R (1+ k1 ×) b. c is the sensitivity function.
And c [ pi _ l (d/h) ^2 ^ 1-v) ], pi _ l is the piezoresistive coefficient, d/h is the ratio of the width to the film thickness of the sensing resistor (when square), and v is the poisson ratio, and since the piezoresistive coefficient pi _ l decreases with the increase of the temperature, the sensitivity function c is monotonically decreased with the increase of the temperature, so that Δ vout2 decreases with the increase of the temperature when Vin is constant.
To compensate for the output voltage of Δ vout2, it is therefore necessary to increase the voltage value of Vin, where: when the operating temperature increases, Vin2 ═ Vs ═ R "/(R" + Rp) ═ R (1+ k1 ×/(R + k1 × + Rp (1+ k2 ×) and, when the temperature change b is not equal to 0, Vin2 ═ Vs (R + R ×/(k 1 ×/+ R + Rp + R ×) k1 ×/+ Rp 2 ×) are present (R + R ×/(+ 1 ×/+ R + Rp + b) (+ k1+ Rp k 2)).
Derivative of Vin2 with respect to b can be found as Vin2 derivative of Vin 2', Vin2 ═ R × Rp (k1-k2)/((R × k1+ Rp × k2) × b + R + Rp) ^ 2; therefore, the relationship between Vin2 and temperature is required to be positive, so k1-k2 must be greater than 0, i.e., k1> k 2. In addition, the denominator of the expression of Vin2 ' has a coefficient of b, and when the value of the denominator of the expression of Vin2 ' is smaller, it can be realized that Vin2 ' is larger, and the increasing speed of the result value of compensating Vin is faster, so that the smaller the value of Rk1+ Rpk2 is, the stronger the compensation effect is, and since R and Rp are both positive numbers, the better the compensation effect is than k2>0 when k2< 0.
Assuming that the bridge arm resistance of the wheatstone bridge is 1k Ω, and the temperature coefficient of the wheatstone bridge is k1 ═ 0.0019, when the temperature is from 25 ℃ to 270 ℃ (i.e. the variation range of b), if there is no setting of the voltage dividing resistor, the output voltage of the wheatstone bridge will drop by 30%; therefore, the voltage of Vin2 needs to be increased, and according to the functional relationship between Vin2 and b, the voltage of Vin2 at 270 ℃ can be increased by adjusting the coefficient value of b, the coefficient of b is R × k1+ Rp × k2, when k2 is less than 0, the voltage of Vin2 at 270 ℃ can be increased by 1.4 times as compared with 25 ℃, and Δ vout2 is kept unchanged compared with the case of uncompensated state, so that the function of effective compensation can be achieved, and the reduction of the sensitivity of the MEMS sensing device can be effectively avoided.
Therefore, when the doping conditions of the voltage-dividing resistance doping layer 104 are appropriately selected, the voltage-dividing resistance doping layer 104 obtains a negative temperature coefficient of resistance, and a better compensation effect can be achieved.
In an embodiment, the substrate layer 101 further comprises: a bottom semiconductor layer and an insulating dielectric layer 1012 on the surface of the bottom semiconductor layer.
In one embodiment, the underlying semiconductor layer comprises: a sensing film 1013 and a support 1011.
The sensing film layer 1013 is located on the side of the insulating medium layer 1012 opposite to the detection circuit layer 102; the sensing film 1013 is disposed opposite to the opening 1023. The supporting portion 1011 has a through cavity 1014 therein, and the supporting portion 1011 is located on a side of the sensing film layer 1013 facing away from the insulating medium layer 1012.
When the traditional MEMS sensing device works, a high voltage is applied to a substrate layer, namely, a reverse bias voltage is applied, and the PN junction reverse bias effect between the substrate layer and a detection circuit layer is realized.
The utility model combines with SOI design, and the insulating medium layer 1012 is arranged at the bottom of the detection circuit layer 102, so that the bottom semiconductor layer and the detection circuit layer 102 can be well isolated even if the device works at high temperature, the bottom semiconductor layer and the detection circuit layer 102 are better insulated, and the leakage current is effectively reduced.
The detection circuit layer 102 and the voltage-dividing resistance doping layer 104 are located on one side of the insulating dielectric layer 1012, which faces away from the bottom semiconductor layer.
As shown in fig. 1 and 4, the insulating dielectric layer 1012 is located on the surface of the sensing film layer 1013. The supporting part 1011 is located on one side of the sensing film layer 1013 facing away from the insulating medium layer, and a through cavity 1014 is formed in the supporting part 1011; the through cavity 1014 includes a cavity floor and a cavity sidewall surrounding the cavity floor. An included angle between the cavity side wall and the cavity bottom surface is a right angle or an obtuse angle, wherein when dry etching is used, due to the process characteristics of the dry etching, the included angle of the through cavity 1014 cannot completely form a right angle, a certain amount of residue is generated, and the right angle can become a round angle; when using wet etching liquid to etch substrate layer 101, because of silicon crystal face etching characteristic, lead to chamber 1014 must down the sculpture along an angle, consequently formed obtuse angle structure, and supporting part 1011 dorsad this moment the surface contact area of response rete 1013 one side can reduce, but wet etching can obtain the 1014 appearance of fine logical chamber contained angle through control etching time, when the contained angle is the obtuse angle promptly, can not become the fillet, and obtuse etching precision is higher.
In an embodiment, as shown in fig. 5 and fig. 6, the substrate layer 101 further includes: the glass substrate 200 is disposed on a side of the support 1011 facing away from the sensing film layer 1013.
The MEMS sensor is packaged on a packaging substrate during operation, and the packaging substrate comprises a ceramic substrate. The coefficient of thermal expansion of the glass substrate is similar to that of the substrate layer, so that when the MEMS sensor expands due to heat, a part of the stress is borne by the glass substrate when the stress is transferred upward, thereby reducing the stress transferred to the sensing film layer 1013.
Referring to fig. 5, the glass substrate 200 and the substrate layer 101 are attached to form a closed structure in the through cavity 1014, and thus, an absolute pressure sensor chip is formed.
Alternatively, the glass substrate 200 described with reference to FIG. 6 has a slot 210 therein, the slot 210 being located at the bottom of the through cavity 1014 and communicating with the through cavity 1014, thus forming a differential pressure sensor chip. Preferably, the opening area of the slot 210 is smaller than the opening area of the through cavity 1014.
Example 2
As shown in fig. 7, the utility model also provides a sensing detection circuit, include: divider resistance Rp and detection module.
The detection module comprises a sensing resistor, the sensing resistor is electrically connected with the voltage dividing resistor Rp, the input end of the detection module is connected with the voltage dividing resistor Rp in series, and the voltage dividing resistor is used for adjusting the voltage Vin at the input end of the detection module. The resistance temperature coefficient of the sensing resistor is larger than that of the voltage dividing resistor Rp.
In one embodiment, the sensing resistor has a positive temperature coefficient of resistance, the voltage dividing resistor has a positive temperature coefficient of resistance, and the temperature coefficient of resistance of the sensing resistor is greater than the temperature coefficient of resistance of the voltage dividing resistor.
In another embodiment, the sensing resistor has a positive temperature coefficient of resistance and the voltage dividing resistor has a negative temperature coefficient of resistance.
In yet another embodiment, the sensing resistor has a negative temperature coefficient of resistance, the voltage dividing resistor has a negative temperature coefficient of resistance, and the temperature coefficient of resistance of the sensing resistor is greater than the temperature coefficient of resistance of the voltage dividing resistor.
The sensor comprises a plurality of sensing resistors, a Wheatstone bridge detection module is formed by the sensing resistors, and the voltage dividing resistor is connected with the Wheatstone bridge detection module in series.
Vin is an input voltage of the wheatstone bridge detection module, and the sensing resistor comprises: the sensing resistor comprises a first sensing resistor R1, a second sensing resistor R2, a third sensing resistor R3 and a fourth sensing resistor R4. One end of the first sensing resistor R1 is connected to one end of the voltage-dividing resistor Rp and one end of the fourth sensing resistor R4, and the other end of the first sensing resistor R1 is connected to one end of the second sensing resistor R2 and the first voltage output terminal Vout +; the other end of the second sensing resistor R2 and one end of the third sensing resistor R3 are electrically connected with a ground terminal; one end of the third sensing resistor R3 is connected with the other end of the fourth sensing resistor R4 and a second voltage output end Vout-; the other end of the voltage-dividing resistor Rp is connected with a power supply signal VS. The first sensing resistor R1, the second sensing resistor R2, the third sensing resistor R3 and the fourth sensing resistor R4 are the sensing resistors.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the utility model.
Claims (25)
1. A MEMS sensing device, comprising:
a substrate layer;
the detection circuit layer is positioned on the substrate layer and comprises a sensing resistance layer;
the voltage-dividing resistance doping layer is positioned on the substrate layer and is connected with the input end of the detection circuit layer in series, and the voltage-dividing resistance doping layer is used for adjusting the voltage of the input end of the detection circuit layer;
the resistance temperature coefficient of the sensing resistance layer is larger than that of the voltage-dividing resistance doping layer.
2. The MEMS sensing device of claim 1, wherein the sensing resistive layer has a positive temperature coefficient of resistance, and the voltage-dividing resistance doped layer has a positive temperature coefficient of resistance;
or the sensing resistance layer has a positive resistance temperature coefficient, and the voltage-dividing resistance doping layer has a negative resistance temperature coefficient;
or the sensing resistance layer has a negative resistance temperature coefficient, and the voltage-dividing resistance doping layer has a negative resistance temperature coefficient.
3. The MEMS sensing device of claim 1, wherein the detection circuit layer has an opening therethrough; the sensing resistor layer surrounds the opening.
4. MEMS sensing device according to claim 1 or 3,
the number of the sensing resistance layers is a plurality, and the sensing resistance layers are mutually separated; the voltage-dividing resistance doping layer is positioned on one side of a part of the sensing resistance layer back to the substrate layer.
5. The MEMS sensing device of claim 4, wherein the detection circuit layer further comprises: the lead layer is positioned on the side part of the sensing resistor layer and is adjacent to the sensing resistor layer;
the MEMS sensing device further comprises: contact doping parts which are positioned on two sides of the voltage-dividing resistance doping layer and are adjacent to the voltage-dividing resistance doping layer; the first insulating layer is positioned on the surface of one side, back to the substrate layer, of the detection circuit layer; the voltage-dividing resistance doping layer and the contact doping part are positioned on one side, back to the detection circuit layer, of the first insulating layer; and the first conductive connecting piece is positioned on part of the lead layer, penetrates through the first insulating layer and is connected with the contact doping part.
6. The MEMS sensing device of claim 5,
the conduction type of the lead layer is the same as that of the sensing resistance layer.
7. The MEMS sensing device of claim 5,
the conductivity type of the voltage-dividing resistance doping layer is the same as that of the contact doping part.
8. The MEMS sensing device of claim 7, wherein the material of the contact doping comprises doped polysilicon.
9. The MEMS sensing device of claim 7, wherein the doping concentration of conductive ions in the contact doping is 1E19/cm3-1E22/cm3。
10. The MEMS sensing device of claim 1,
the conduction type of the voltage division resistance doping layer is the same as that of the sensing resistance layer.
11. The MEMS sensing device of claim 10, wherein the conductivity type of the voltage-dividing resistance doped layer and the conductivity type of the sensing resistance layer are both P-type.
12. The MEMS sensing device of claim 10, wherein the material of the sensing resistive layer comprises doped monocrystalline silicon.
13. The MEMS sensing device of claim 10, wherein the material of the voltage divider resistance doped layer comprises doped polysilicon.
14. The MEMS sensing device of claim 10, wherein the doping concentration of conductive ions in the sensing resistor layer is 1E14/cm3-1E22/cm3。
15. The MEMS sensing device of claim 10, wherein the doping concentration of the conductive ions in the voltage-dividing resistance doped layer is 1E14/cm3-1E18/cm3。
16. The MEMS sensing device of claim 1, wherein the voltage divider resistance doped layer is disposed in the same layer as the detection circuit layer.
17. The MEMS sensing device of claim 1, wherein the substrate layer comprises: the semiconductor structure comprises a bottom semiconductor layer and an insulating medium layer positioned on the surface of the bottom semiconductor layer;
the detection circuit layer and the voltage-dividing resistance doping layer are positioned on one side of the insulating medium layer, which is back to the bottom semiconductor layer.
18. The MEMS sensing device of claim 17, wherein the bottom semiconductor layer comprises: the induction film layer is positioned on one side of the insulating medium layer, which is opposite to the detection circuit layer; the supporting part is provided with a through cavity and is positioned on one side of the induction film layer, which faces away from the insulating medium layer.
19. The MEMS sensing device of claim 18, wherein the through cavity comprises a cavity floor and a cavity sidewall surrounding the cavity floor; the included angle between the cavity side wall and the cavity bottom surface is a right angle or an obtuse angle.
20. The MEMS sensing device of claim 18, wherein the substrate layer further comprises: the glass substrate is arranged on one side, back to the induction film layer, of the supporting part; the glass substrate and the substrate layer are attached to enable the through cavity to form a closed structure, or a slotted hole is formed in the glass substrate and is located at the bottom of the through cavity and communicated with the through cavity.
21. The MEMS sensing device of claim 1, wherein the MEMS sensing device comprises a MEMS pressure sensitive die; the detection circuit layer comprises a pressure detection circuit layer; the sensing resistor layer comprises a piezoresistive layer.
22. A sensing circuit, comprising:
a voltage dividing resistor;
the detection module comprises a sensing resistor, the input end of the detection module is connected with the divider resistor in series, and the divider resistor is used for adjusting the voltage of the input end of the detection module;
the resistance temperature coefficient of the sensing resistor is larger than that of the voltage dividing resistor.
23. The sensing circuit of claim 22, wherein the sense resistor has a positive temperature coefficient of resistance, and the voltage divider resistor has a positive temperature coefficient of resistance;
or the sensing resistor has a positive resistance temperature coefficient, and the voltage dividing resistor has a negative resistance temperature coefficient;
alternatively, the sensing resistor has a negative resistance temperature coefficient and the voltage dividing resistor has a negative resistance temperature coefficient.
24. The sensing circuit of claim 22, wherein the sensing resistor is a plurality of sensing resistors, the plurality of sensing resistors form a wheatstone bridge detection module, and the voltage divider resistor is connected in series with the wheatstone bridge detection module.
25. The sensing detection circuit of claim 24,
the sensing resistor includes: the sensing resistor comprises a first sensing resistor, a second sensing resistor, a third sensing resistor and a fourth sensing resistor;
one end of the first sensing resistor is connected with one end of the voltage dividing resistor and one end of the fourth sensing resistor, and the other end of the first sensing resistor is connected with one end of the second sensing resistor and the first voltage output end;
the other end of the second sensing resistor and one end of the third sensing resistor are electrically connected with a grounding end;
one end of the third sensing resistor is connected with the other end of the fourth sensing resistor and the second voltage output end;
the other end of the divider resistor is connected with a power signal.
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