CN215288962U - Vacuum vapor deposition reaction chamber - Google Patents
Vacuum vapor deposition reaction chamber Download PDFInfo
- Publication number
- CN215288962U CN215288962U CN202121784265.7U CN202121784265U CN215288962U CN 215288962 U CN215288962 U CN 215288962U CN 202121784265 U CN202121784265 U CN 202121784265U CN 215288962 U CN215288962 U CN 215288962U
- Authority
- CN
- China
- Prior art keywords
- guide plate
- vapor deposition
- vacuum vapor
- chamber
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The utility model discloses a vacuum vapor deposition reaction chamber, include: a chamber; the rotating disc is rotatably arranged in the cavity around the axis of the rotating disc, and a substrate is arranged on the rotating disc; the reaction gas spray head is arranged on the inner top wall of the cavity and used for spraying reaction gas towards the rotary table; the guide mechanism comprises a guide plate, and the guide plate is movably arranged in the cavity relative to the side wall of the rotary disc along a first direction; and the control mechanism is used for detecting the reaction environment in the chamber in the substrate processing process and controlling the guide plate to move relative to the side wall of the turntable according to the reaction environment so as to adjust the size of the gap between the guide plate and the side wall of the turntable. The utility model discloses a lateral wall of the relative carousel of control guide plate removes the clearance size between the lateral wall in order to adjust guide plate and carousel to can guide the air current in the chamber, avoid reactant gas to form local vortex between the edge of carousel and cavity inner wall, and then can improve the homogeneity to substrate chemical treatment.
Description
Technical Field
The utility model relates to the technical field of semiconductors, especially, relate to a vacuum vapor deposition reaction chamber.
Background
At present, when a turntable in the existing vacuum vapor deposition reaction chamber rotates at a high speed, reaction gas is easy to form local vortex between the edge of the turntable and the inner wall of the reaction chamber, so that the uniformity of chemical treatment on a substrate is influenced.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a vacuum vapor deposition reaction chamber to when solving the high-speed rotation of carousel in the current vacuum vapor deposition reaction chamber, make reactant gas form local vortex between the edge of carousel and the reaction chamber inner wall easily, thereby influence the problem to the homogeneity of substrate chemical treatment.
Therefore, the utility model discloses a technical scheme provide a vacuum vapor deposition reaction chamber, include:
a chamber;
the rotating disc is rotatably arranged in the cavity around the axis of the rotating disc, and a substrate is arranged on the rotating disc;
the reaction gas spray head is arranged on the inner top wall of the chamber and used for spraying reaction gas towards the rotary table;
the flow guide mechanism comprises a flow guide plate, and the flow guide plate is movably arranged in the cavity relative to the side wall of the rotating disc along a first direction;
the control mechanism is used for detecting the reaction environment in the cavity in the substrate processing process and controlling the guide plate to move relative to the side wall of the turntable according to the reaction environment so as to adjust the size of the gap between the guide plate and the side wall of the turntable.
In an embodiment of the present invention, the reaction gas nozzle includes a plurality of gas injection holes, and the included angle between the gas injection hole and the lower surface of the reaction gas nozzle is gradually increased from outside to inside.
In an embodiment of the present invention, the flow guiding mechanism further includes:
the mounting seat is arranged on the inner top wall of the cavity, a first sliding groove is formed in the mounting seat along the first direction, a second sliding groove is formed in the mounting seat along the second direction perpendicular to the first direction, and the first sliding groove is communicated with the second sliding groove;
the wedge, follow the movably setting of second direction is in the second spout, the guide plate is followed the movably setting of first direction is in the first spout, the one end of wedge with the guide plate is kept away from the one end looks butt of carousel just has the drive inclined plane, the guide plate is kept away from the one end of carousel be provided with drive inclined plane matched with cooperation inclined plane.
In an embodiment of the present invention, a limiting groove communicated with the first sliding groove is further disposed in the mounting seat, a limiting portion is disposed on the flow guide plate, the limiting portion extends into the limiting groove, and an elastic member is disposed between the limiting portion and a groove wall of the limiting groove, the elastic member is used for keeping the flow guide plate away from the elastic force of the rotating disc.
In an embodiment of the present invention, the flow guiding mechanism further includes:
and one end of the screw is in threaded connection with one end, far away from the guide plate, of the wedge block, and the screw can rotate around the axis of the screw.
In an embodiment of the present invention, the flow guiding mechanism further includes:
the driving piece is arranged on the outer side of the cavity, and the driving end of the driving piece is connected with one end, far away from the wedge block, of the screw rod.
In an embodiment of the invention, the driving member is an electric motor.
In an embodiment of the present invention, the diversion mechanism has two diversion mechanisms, two diversion mechanisms are symmetrically disposed around the turntable.
The utility model discloses an useful part lies in:
be different from prior art, use the technical scheme of the utility model, during the in-service use, through the reaction environment of control mechanism real-time detection in to substrate processing process cavity to according to the relative carousel of reaction environment control guide plate lateral wall remove with the clearance size between the lateral wall of adjusting guide plate and carousel, thereby can guide the air current in the cavity, avoid reacting gas to form local vortex between the edge of carousel and cavity inner wall, and then can improve the homogeneity to substrate chemical treatment.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural view of a vacuum vapor deposition chamber according to an embodiment of the present invention.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Referring to fig. 1, an embodiment of the present invention provides a vacuum vapor deposition chamber, which includes a chamber 1, a turntable 2, a reaction gas showerhead 3, a flow guide mechanism 4, and a control mechanism (not shown). A turntable 2 is rotatably disposed about its axis within the chamber 1, the turntable 2 having a substrate disposed thereon. A reaction gas showerhead 3 is provided on an inner ceiling wall of the chamber 1 for ejecting reaction gas toward the turntable 2. The flow guiding mechanism 4 comprises a flow guiding plate 42, and the flow guiding plate 42 is movably arranged in the chamber 1 along the first direction relative to the side wall of the rotating disc 2. The control mechanism is used for detecting the reaction environment in the chamber 1 during the substrate processing process, and controlling the guide plate 42 to move relative to the side wall of the turntable 2 according to the reaction environment so as to adjust the gap between the guide plate 42 and the side wall of the turntable 2.
Above-mentioned vacuum vapor deposition reaction chamber, during the in-service use, through the reaction environment of control mechanism real-time detection in to substrate processing process cavity 1 to according to reaction environment control guide plate 42 relative carousel 2's lateral wall remove with the clearance size between the lateral wall of adjusting guide plate 42 and carousel 2, thereby can guide the air current in the cavity 1, avoid reactant gas to form local vortex between carousel 2's edge and cavity 1 inner wall, and then can improve the homogeneity to substrate chemical treatment.
The embodiment of the utility model provides an in, reaction gas shower nozzle 3 includes a plurality of fumaroles 31, and contained angle between a plurality of fumaroles 31 and reaction gas shower nozzle 3's the lower surface is by outer grow gradually to the interior. Thus, the injection effect of the reaction gas is good.
In the embodiment of the present invention, the guiding mechanism 4 further includes a mounting seat 41 and a wedge 43. The mounting seat 41 is disposed on an inner top wall of the chamber 1, a first sliding groove (not shown) is disposed in the mounting seat 41 along a first direction, and a second sliding groove 411 is disposed in a second direction perpendicular to the first direction, and the first sliding groove and the second sliding groove 411 are communicated with each other. The wedge-shaped block 43 is movably arranged in the second sliding groove 411 along the second direction, the guide plate 42 is movably arranged in the first sliding groove along the first direction, one end of the wedge-shaped block 43 is abutted to one end, far away from the turntable 2, of the guide plate 42 and is provided with a driving inclined plane, and one end, far away from the turntable 2, of the guide plate 42 is provided with a matching inclined plane matched with the driving inclined plane. In this manner, as wedge 43 moves downward, baffle 42 may be driven to move closer to disk 2, thereby reducing the size of the gap between baffle 42 and the side wall of disk 2.
The first direction may be a left-right direction in fig. 1, and the second direction may be an up-down direction in fig. 1.
Further, a limiting groove 412 communicated with the first sliding groove is further arranged in the mounting seat 41, a limiting portion 421 is arranged on the deflector 42, the limiting portion 421 extends into the limiting groove 412, an elastic member 422 is arranged between the limiting portion 421 and a groove wall of the limiting groove 412, and the elastic member 422 is used for providing elastic force for the deflector 42 away from the turntable 2. Thus, the limiting groove 412 can limit the guide plate 42 and prevent the guide plate 42 from being separated from the mounting seat 41. When wedge 43 moves upward, spring 422 may urge baffle 42 to move away from disk 2, thereby increasing the size of the gap between baffle 42 and the sidewall of disk 2.
The embodiment of the utility model provides an in, water conservancy diversion mechanism 4 still includes screw rod 44, and the one end threaded connection of guide plate 42 is kept away from to the one end of screw rod 44 and wedge 43, and screw rod 44 can rotate around self axis. Thus, when the screw 44 rotates around its axis, the wedge 43 can be driven to move up and down.
The embodiment of the utility model provides an in, water conservancy diversion mechanism 4 still includes driving piece 46, and driving piece 46 passes through fixing base 461 and sets up in the cavity 1 outside, and the drive end of driving piece 46 is connected through connecting piece 45 and the one end that wedge 43 was kept away from to screw rod 44. In this manner, the drive member 46 can drive the screw 44 to rotate.
Optionally, the drive 46 is an electric motor.
The embodiment of the utility model provides an in, water conservancy diversion mechanism 4 has two, and two water conservancy diversion mechanisms 4 set up around 2 symmetries of carousel.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (8)
1. A vacuum vapor deposition reaction chamber, comprising:
a chamber;
the rotating disc is rotatably arranged in the cavity around the axis of the rotating disc, and a substrate is arranged on the rotating disc;
the reaction gas spray head is arranged on the inner top wall of the chamber and used for spraying reaction gas towards the rotary table;
the flow guide mechanism comprises a flow guide plate, and the flow guide plate is movably arranged in the cavity relative to the side wall of the rotating disc along a first direction;
the control mechanism is used for detecting the reaction environment in the cavity in the substrate processing process and controlling the guide plate to move relative to the side wall of the turntable according to the reaction environment so as to adjust the size of the gap between the guide plate and the side wall of the turntable.
2. The vacuum vapor deposition reaction chamber of claim 1, wherein the reaction gas showerhead comprises a plurality of gas injection holes, and an included angle between the plurality of gas injection holes and a lower surface of the reaction gas showerhead is gradually increased from outside to inside.
3. The vacuum vapor deposition reaction chamber of claim 1, wherein the flow directing mechanism further comprises:
the mounting seat is arranged on the inner top wall of the cavity, a first sliding groove is formed in the mounting seat along the first direction, a second sliding groove is formed in the mounting seat along the second direction perpendicular to the first direction, and the first sliding groove is communicated with the second sliding groove;
the wedge, follow the movably setting of second direction is in the second spout, the guide plate is followed the movably setting of first direction is in the first spout, the one end of wedge with the guide plate is kept away from the one end looks butt of carousel just has the drive inclined plane, the guide plate is kept away from the one end of carousel be provided with drive inclined plane matched with cooperation inclined plane.
4. The vacuum vapor deposition reaction chamber according to claim 3, wherein a limiting groove communicated with the first sliding groove is further disposed in the mounting seat, a limiting portion is disposed on the flow guide plate, the limiting portion extends into the limiting groove, an elastic member is disposed between the limiting portion and a groove wall of the limiting groove, and the elastic member is used for providing elastic force for the flow guide plate away from the turntable.
5. The vacuum vapor deposition reaction chamber of claim 4, wherein the flow directing mechanism further comprises:
and one end of the screw is in threaded connection with one end, far away from the guide plate, of the wedge block, and the screw can rotate around the axis of the screw.
6. The vacuum vapor deposition reaction chamber of claim 5, wherein the flow directing mechanism further comprises:
the driving piece is arranged on the outer side of the cavity, and the driving end of the driving piece is connected with one end, far away from the wedge block, of the screw rod.
7. The vacuum vapor deposition reaction chamber of claim 6, wherein the drive member is a motor.
8. The vacuum vapor deposition chamber of claim 1, wherein there are two of the flow guide mechanisms, and the two flow guide mechanisms are symmetrically disposed around the turntable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121784265.7U CN215288962U (en) | 2021-08-02 | 2021-08-02 | Vacuum vapor deposition reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121784265.7U CN215288962U (en) | 2021-08-02 | 2021-08-02 | Vacuum vapor deposition reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215288962U true CN215288962U (en) | 2021-12-24 |
Family
ID=79525883
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121784265.7U Active CN215288962U (en) | 2021-08-02 | 2021-08-02 | Vacuum vapor deposition reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215288962U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115572958A (en) * | 2022-09-30 | 2023-01-06 | 楚赟精工科技(上海)有限公司 | Gas conveying assembly and gas phase reaction device |
| CN117187785A (en) * | 2023-11-08 | 2023-12-08 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition device and method |
-
2021
- 2021-08-02 CN CN202121784265.7U patent/CN215288962U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115572958A (en) * | 2022-09-30 | 2023-01-06 | 楚赟精工科技(上海)有限公司 | Gas conveying assembly and gas phase reaction device |
| CN115572958B (en) * | 2022-09-30 | 2023-08-11 | 楚赟精工科技(上海)有限公司 | Gas conveying assembly and gas phase reaction device |
| CN117187785A (en) * | 2023-11-08 | 2023-12-08 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition device and method |
| CN117187785B (en) * | 2023-11-08 | 2024-02-23 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition device and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN215288962U (en) | Vacuum vapor deposition reaction chamber | |
| US20190267257A1 (en) | Substrate processing apparatus | |
| US9805938B2 (en) | Substrate processing apparatus and substrate processing method | |
| KR100695660B1 (en) | Workpiece Processor Having Processing Chamber With Improved Processing Fluid Flow | |
| US20220122853A1 (en) | Substrate processing apparatus and substrate processing method of controlling discharge angle and discharge position of processing liquid supplied to peripheral portion of substrate | |
| US10403517B2 (en) | Substrate processing apparatus | |
| US20150303078A1 (en) | Substrate drying apparatus, storage medium, and substrate drying method | |
| CN110158143B (en) | Suction device | |
| US11261535B2 (en) | Plating apparatus and operation method thereof | |
| US20160111302A1 (en) | Systems and Methods for Wet Processing Substrates with Rotating Splash Shield | |
| CN110355455A (en) | Argon ion cutter device | |
| JP4464293B2 (en) | Semiconductor substrate processing apparatus and semiconductor substrate processing method | |
| CN210001931U (en) | Spray header device and MOCVD equipment | |
| US20130255718A1 (en) | Substrate processing method and substrate processing apparatus | |
| JP6325919B2 (en) | Substrate processing apparatus and substrate processing method | |
| CN210846817U (en) | Self-rotating spraying device | |
| CN108546928B (en) | Device for preparing full-deposition silicon carbide coating by chemical vapor deposition | |
| CN108538697A (en) | A kind of plasma etching machine | |
| JP2015177027A (en) | Substrate liquid processing apparatus and substrate liquid processing method | |
| KR102206900B1 (en) | Substrate processing apparatus | |
| CN210523204U (en) | Wafer cleaning device | |
| CN212335275U (en) | Rotary cathode for magnetron sputtering | |
| CN217516022U (en) | Locking knob loading attachment | |
| CN110385238B (en) | Improvement method of spin coater | |
| CN216560868U (en) | Pre-blowing and washing mechanism of wafer probe station |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |