CN215272818U - Multifunctional intracranial cortex electrode - Google Patents
Multifunctional intracranial cortex electrode Download PDFInfo
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- CN215272818U CN215272818U CN202121580862.8U CN202121580862U CN215272818U CN 215272818 U CN215272818 U CN 215272818U CN 202121580862 U CN202121580862 U CN 202121580862U CN 215272818 U CN215272818 U CN 215272818U
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Abstract
The application relates to a multifunctional intracranial cortical electrode, which comprises a cortical electrode body, wherein the cortical electrode body comprises a flaky substrate, a first connecting wire and an electrode point, the first connecting wire is partially arranged in the flaky substrate body, the electrode point is arranged on the flaky substrate and is connected with the first connecting wire, and the electrode point is arranged on the lower surface of the flaky substrate; and the sensing piece is arranged on the sheet-shaped substrate and is connected with the second connecting wire which is partially arranged in the sheet-shaped substrate. The brain temperature monitoring system can monitor the brain electrical signal and the brain temperature simultaneously, improves the monitoring precision of the neural activity and the diagnosis precision of the focus, or monitors the brain electrical signal and the intracranial pressure simultaneously, and improves the monitoring precision of the health condition of the patient suffering from the neural crisis.
Description
Technical Field
The application relates to the technical field of medical equipment monitoring, in particular to a multifunctional intracranial cortex electrode.
Background
The nerve electrophysiology monitoring electrode is widely applied to the fields of neurosurgery and cerebrospinal nerve function research, and can acquire electric signals generated by neuron activity in the brain by attaching a cortical electrode to the cerebral cortex, and the electroencephalogram signals become electroencephalograms after external processing, so that doctors are helped to diagnose the illness state of patients. However, due to the complexity of neural activity, the diagnosis and treatment effects are affected only by the single electroencephalogram signal, and the neural electrophysiological monitoring electrode can only be used for monitoring the electroencephalogram signal and has a single function. Therefore, a multifunctional monitoring electrode is urgently needed in clinic and scientific research, and various related monitoring data can be obtained through one-time attachment, so that the diagnosis efficiency and the positioning precision of the focus of a patient are improved, and the cure rate of the patient is further improved.
SUMMERY OF THE UTILITY MODEL
The application provides a multi-functional intracranial cortex electrode can monitor EEG signal and brain temperature simultaneously, or monitor EEG signal and intracranial pressure simultaneously, improves the monitoring precision to the neural activity in the brain.
The application provides a multi-functional intracranial cortex electrode adopts following technical scheme:
a multifunctional intracranial cortical electrode comprising:
the cortical electrode comprises a flaky substrate, a first connecting wire and an electrode point, wherein the first connecting wire is partially arranged in the flaky substrate, the electrode point is arranged on the flaky substrate and is connected with the first connecting wire, and the electrode point is arranged on the lower surface of the flaky substrate;
and the sensing part is arranged on the sheet-shaped substrate, is connected with a second connecting line partially arranged in the sheet-shaped substrate and is used for detecting the brain temperature or the intracranial pressure.
By adopting the technical scheme, when the cortical electrode is attached to the cerebral cortex, electroencephalogram signals and brain temperature can be monitored simultaneously, and nervous system diseases such as epilepsy and Parkinson are often accompanied by severe nerve metabolic activity during the attack, so that the focus position is caused to have temperature change, therefore, brain temperature information can be mutually contrasted with the electroencephalogram signals, and the monitoring precision of the nerve activity and the diagnosis precision of the focus are improved; the electroencephalogram signal and the intracranial pressure can be monitored simultaneously, the electroencephalogram signal and the intracranial pressure directly reflect the health condition of the patient suffering from the nerve critical illness, the two data are monitored simultaneously, and the monitoring precision of the health condition of the patient suffering from the nerve critical illness is improved.
Optionally, the sensing elements and the electrode points are staggered on the lower surface.
Optionally, the sensing element is a semiconductor type pressure sensor.
Optionally, the electrode point is an annular electrode point, the semiconductor type pressure sensor is embedded in the annular electrode point, and the lower surface of the semiconductor type pressure sensor is flush with the lower surface of the annular electrode point.
By adopting the technical scheme, the cortical electrode can be better attached to the surface of the cerebral cortex or the spinal nerve.
Optionally, a sink is disposed on the upper surface of the electrode point, and the semiconductor pressure sensor is disposed in the sink.
Optionally, the semiconductor type pressure sensor is disposed on an upper surface of the electrode point.
By adopting the technical scheme, the cortical electrode can monitor the intracranial electroencephalogram signal and the intracranial pressure synchronously at the same position.
Optionally, the sensing member is a flexible pressure sensor, and the flexible pressure sensor is spliced with the sheet-shaped substrate.
By adopting the technical scheme, the flexibility of the multifunctional intracranial cortical electrode can be increased by the flexible pressure sensor, so that the electrode can be better attached to the cerebral cortex or spinal nerves; furthermore, a planar pressure distribution of its coverage area can be obtained using a flexible pressure sensor.
Optionally, the sensing piece is a flexible pressure sensor, a through hole is formed in the flexible pressure sensor, the electrode point is arranged in the through hole, and the lower surface of the flexible pressure sensor is flush with the lower surface of the electrode point.
By adopting the technical scheme, the cortical electrode can be better attached to the surface of the cerebral cortex or the spinal nerve.
Optionally, the sensing member is a temperature sensor, the electrode point is an annular electrode point, the temperature sensor is embedded in the annular electrode point, and the lower surface of the temperature sensor is flush with the lower surface of the annular electrode point.
By adopting the technical scheme, the cortical electrode can be better attached to the surface of the cerebral cortex or the spinal nerve.
The application provides a pair of cortex electrode, including cortex electrode body, cortex electrode body include slice basement, part set up in this internal first connecting wire of slice basement and set up in on the slice basement and with the electrode point that first connecting wire is connected, the electrode point sets up the lower surface of slice basement sets up the sensing piece that is used for detecting brain temperature or intracranial pressure on slice basement body, and with attached in cerebral cortex of cortex electrode, can monitor EEG signal and brain temperature simultaneously, or monitor EEG signal and intracranial pressure simultaneously, improved the diagnostic precision of the focus of nervous system disease and the monitoring precision of brain health.
Drawings
Fig. 1 is a schematic structural diagram of a cortical electrode with a semiconductor type pressure sensor according to an embodiment of the present application.
Fig. 2 is a schematic view of a semiconductor type pressure sensor according to an embodiment of the present application.
Fig. 3 is a schematic view of another mounting manner of the semiconductor type pressure sensor according to the embodiment of the present application.
Fig. 4 is a schematic view of another mounting method of the semiconductor type pressure sensor according to the embodiment of the present application.
FIG. 5 is an elevation view of one manner of mounting a flexible pressure sensor according to an embodiment of the present application.
FIG. 6 is a side view of one manner of mounting a flexible pressure sensor according to an embodiment of the present application.
FIG. 7 is a schematic view of another embodiment of a flexible pressure sensor according to the present application.
Fig. 8 is a schematic view of an installation manner of a temperature sensor according to an embodiment of the present application.
FIG. 9 is a schematic view of another installation of a temperature sensor according to an embodiment of the present application.
Description of reference numerals: 1. a sheet-like substrate; 2. an electrode point; 3. a semiconductor type pressure sensor; 4. a flexible pressure sensor; 5. a temperature sensor.
Detailed Description
Various exemplary embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise. In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
The intracranial cortical electrode is widely applied to the fields of neurosurgery and cerebrospinal nerve function research, and by implanting the cortical electrode in the brain, an electric signal generated by neuron activity in the brain can be collected, and the electroencephalogram signal becomes an electroencephalogram after external processing, so that doctors are helped to diagnose the state of an illness of patients. Taking epilepsy as an example, the monitoring of electroencephalogram can help a physician to determine the area of abnormal function and the epileptogenic focus during epileptic seizure.
Intracranial pressure can the condition of the supplementary judgement intracranial hemorrhage or hydrocephalus, to the monitoring of intracranial pressure, first catheter drainage monitoring method, through drill out the hole that is used for the drainage on the skull, goes out the cerebrum with cerebrospinal fluid through hollow catheter drainage, is connected to outside pressure sensor or mercury column with the pipe again to finally convert pressure signal into readable digital signal, acquire intracranial pressure change information. The method not only needs single skull perforation, but also has the problem of information acquisition lag. The other is an intracerebral implantation monitoring method, namely, a pressure sensor is placed in the brain parenchyma, and intracranial pressure change information is obtained through the pressure sensor. However, this implantable monitoring method is single-function, can only be used to monitor intracranial pressure, and also increases the surgical risk for the patient.
Changes in temperature can generally reflect the health of the body, and the brain is no exception. Brain temperature is associated with a number of common ailments, including epilepsy. Time-dependent changes in brain temperature may be caused by fluctuations in Cerebral Blood Flow (CBF) and brain oxidative depletion metabolic rate (CMRO), both of which are associated with changes in neuronal activity. While epilepsy can cause violent neuron activity during the attack, so that the local metabolic activity of the brain is enhanced, and the temperature is raised. The monitoring of the temperature change of the brain can provide more data reference for doctors to accurately position the focal position of the epilepsy. However, at present, brain temperature monitoring is usually performed separately from electroencephalogram detection, which may cause that temperature changes in local areas of the brain, causes of epilepsy and complexity of brain structures cannot be obtained synchronously and in an apposition while electroencephalogram monitoring is performed, and accurate judgment on seizure rules and epileptic focus positions is difficult to be made depending on a single evaluation index.
In order to solve the problems, the application discloses a multifunctional intracranial cortex electrode.
Cortex electrode includes the cortex electrode body, the sensing piece of setting on the cortex electrode and the second connecting wire of part setting in the cortex electrode, sensing piece and second connecting wire are connected, sensing piece can be pressure sensor, make this application can carry out simultaneous monitoring to brain electricity-intracranial pressure after implanting brain essence, sensing piece also can be temperature sensor, make this application after implanting brain essence, monitor when carrying out brain electricity-brain temperature, of course, pressure sensor and temperature sensor can set up simultaneously on the cortex electrode, make this application can carry out the monitoring when brain electricity-brain temperature-intracranial pressure.
The skin electrode body comprises a sheet-shaped substrate, a first connecting line partially arranged in the sheet-shaped substrate and an electrode point arranged on the sheet-shaped substrate and connected to the first connecting line, wherein the electrode point is arranged on the lower surface of the sheet-shaped substrate.
The cortex electrode can be arranged in encephalic dura mater through surgical operation under, attaches the cortex electrode in cerebral cortex surface for the electrode point and the brain of cortex electrode are in essence contact, and the electrode point acquires the brain wave signal, and transmit to the brain outside through first connecting wire, and first connecting wire can be connected electrode point and the receiving arrangement who is used for receiving the brain wave signal, and receiving arrangement shows the brain wave signal, makes medical personnel can accurate monitoring brain wave signal, with the position of accurate judgement intracranial focus.
In the embodiment of the application, the pressure sensor and/or the temperature sensor are arranged on the sheet-shaped substrate of the cortical electrode, when the cortical electrode is implanted in an operation, the pressure sensor and/or the temperature sensor can be implanted into the brain parenchyma together, when the sensing element is the pressure sensor, the application can monitor the electroencephalogram signal and the intracranial pressure signal synchronously in real time, and does not need to drill a drainage hole on the skull or implant the pressure sensor into the brain parenchyma separately, so that the operation efficiency is improved, and the operation risk is reduced; in addition, when intracranial pressure monitoring is carried out on a patient with a nerve critical condition, because the change of the intracranial pressure is slow, and the change of the electroencephalogram is real-time and rapid, the application range of the cortical electrode can be expanded by simultaneously measuring the brain temperature and the intracranial pressure of the electroencephalogram, when the intracranial electrode is implanted, more related data can be obtained, and the monitoring precision of the neural activity is improved.
When the sensing element is a temperature sensor, the electroencephalogram and the electroencephalogram of the local area of the brain can be acquired in real time in an apposition mode, the electroencephalogram and the electroencephalogram temperature can be monitored simultaneously, a doctor can be helped to accurately position epileptic focus, the diagnosis precision and the operation success rate are improved, more reference indexes are provided for the doctor to research epileptic seizure rules, and the accuracy and the efficiency of epileptic diagnosis are improved.
The following is a detailed description with reference to specific examples.
In the embodiment of the present application, the sheet-shaped substrate may be a square sheet-shaped substrate, the electrode points are distributed on the sheet-shaped substrate in a single row or multiple rows, and the distances between the electrode points in the same row are equal.
The sensing elements may be distributed in a single row or in multiple rows on the sheet-like substrate, and in particular, the sensing elements may be disposed between two electrode points in each row, the electrode points and the sensing elements are distributed alternately, and further, in each row, the distance between the sensing elements and two adjacent electrode points is equal.
In another possible implementation, the sensing elements may be irregularly arranged on the sheet-like substrate, as long as they do not interfere with the position of the electrode points.
The electrode point can be in a step circular truncated cone shape, when the skin layer electrode is manufactured, the electrode point and the sensing part can be placed at preset positions in a die for pouring the sheet-shaped substrate, then the liquid-shaped substrate is poured in the die, the sheet-shaped electrode is formed after the substrate is solidified, the electrode point of the finished product skin layer electrode is partially fixed in the sheet-shaped substrate, and the electrode point is partially exposed out of the lower surface of the sheet-shaped substrate.
In the embodiment of the present application, the sensing member may be a semiconductor type pressure sensor, a flexible pressure sensor, or a temperature sensor.
Example 1:
referring to fig. 1, when the sensing member is a semiconductor type pressure sensor 3, the semiconductor type pressure sensors 3 are distributed on the sheet-like substrate 1 in a plurality of rows, the semiconductor type pressure sensors 3 are arranged between every two electrode points 2, and the distances between the semiconductor type pressure sensors 3 and the adjacent two electrode points 2 are equal in each row.
Referring to fig. 2, in another possible implementation manner, the electrode point 2 may be an annular electrode point 2, the semiconductor type pressure sensor 3 is embedded in the electrode point 2, and the lower surface of the semiconductor type pressure sensor 3 is flush with the lower surface of the electrode point 2, so that after the brain parenchyma is implanted in the application, when brain waves and intracranial pressure are monitored, the electrode point 2 and the semiconductor type pressure sensor 3 can both be easily attached to the cerebral cortex, and cannot affect each other.
In another mode that probably realizes, refer to fig. 3, the upper surface of electrode point 2 is seted up with semiconductor type pressure sensor 3's shape assorted heavy groove, semiconductor type pressure sensor 3 inlays to be established in heavy groove, and pressure constant sensor is wrapped up by electrode point 2 and slice base 1, when monitoring intracranial pressure, electrode point 2 receives pressure and takes place deformation, and then transmits intracranial pressure signal to semiconductor type pressure sensor 3 for semiconductor type pressure sensor 3 can monitor intracranial pressure, and electrode point 2 and semiconductor type pressure sensor 3 can monitor brain wave and intracranial pressure of same position in the brain substance.
In another possible implementation manner, referring to fig. 4, the semiconductor type pressure sensor 3 is disposed on the upper surface of the electrode point 2, one surface of the semiconductor type pressure sensor 3 is connected to the sheet-shaped substrate 1, and the other surface of the semiconductor type pressure sensor 3 is connected to the electrode point 2, the semiconductor type pressure sensor 3 is entirely embedded in the sheet-shaped substrate 1, and the electrode point 2 is partially embedded in the sheet-shaped substrate 1, similarly, when monitoring intracranial pressure, the electrode point 2 is deformed by pressure, and transmits an intracranial pressure signal to the semiconductor type pressure sensor 3, so that the semiconductor type pressure sensor 3 can monitor intracranial pressure, and the electrode point 2 and the semiconductor type pressure sensor 3 can monitor brain waves and intracranial pressure of the same brain substance.
The semiconductor type pressure sensor 3 has simple structure and stable performance, does not have a relative motion part which is sensed by piezoelectricity or strain, and the pressure sensitive element and the elastic element of the pressure sensor are integrated, thereby avoiding mechanical lag and creep and improving the performance of the pressure sensor. And when the semiconductor pressure sensor is subjected to external pressure, the semiconductor material can convert mechanical quantity of stress and strain applied to the semiconductor material into an electric signal, so that the electric signal can be conveniently received by a receiving device to be converted into readable pressure information.
Example 2:
when the sensing member is a flexible pressure sensor 4, the flexible pressure sensor 4 may be a rectangular sheet-like structure. The flexible pressure sensor 4 has high flexibility and sensitivity, and the flexible pressure sensor 4 is made by encapsulating functional nano materials and piezoelectric materials with high-flexibility compounds or preparing mixed micro/nano structures. Piezoresistive, piezoelectric and capacitive pressure sensors can be classified according to the signal transmission mechanism used in different manufacturing processes.
In a possible way of implementation, referring to fig. 5, the flexible pressure sensors 4 are distributed in a plurality of rows on the sheet-like substrate 1, the flexible pressure sensors 4 being arranged between every two electrode points 2, and the distance between the flexible pressure sensor 4 and the adjacent two electrode points 2 is equal in each row.
Referring to fig. 6, the flexible pressure sensor 4 is spliced with the sheet-shaped substrate, and during manufacturing, the flexible pressure sensor 4 and the electrode point 2 can be placed at preset positions and then cast from a liquid substrate.
In another mode that probably realizes, refer to fig. 7, seted up the through-hole on the flexible pressure sensor 4, electrode point 2 inlays to be established in the through-hole, and electrode point 2 exposes from the lower surface of flexible pressure sensor 4 for after this application implants the brain parenchyma, when monitoring brain wave and intracranial pressure, flexible pressure sensor 4 and electrode point 2 all can laminate with the brain parenchyma, and can not influence each other between electrode point 2 and the flexible pressure sensor 4.
Example 3:
when the sensing member is a temperature sensor 5, referring to fig. 8, the temperature and pressure sensors are distributed on the sheet-like substrate 1 in a plurality of rows, the temperature and pressure sensors are arranged between every two electrode points 2, and the distance between the temperature and pressure sensors and two adjacent electrode points 2 is equal in each row.
In another possible implementation mode, referring to fig. 9, the electrode point 2 can be an annular electrode point 2, the temperature and pressure sensor is embedded in the electrode point 2, and the lower surface of the temperature and pressure sensor is flush with the lower surface of the electrode point 2, so that after the brain parenchyma is implanted in the application, when the brain waves and the intracranial pressure are monitored, the electrode point 2 and the temperature and pressure sensor can be easily attached to the cerebral cortex, and cannot affect each other.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (9)
1. A multi-functional intracranial cortical electrode, comprising:
the cortical electrode comprises a flaky substrate (1), a first connecting line partially arranged in the flaky substrate (1) and an electrode point (2) arranged on the flaky substrate (1) and connected with the first connecting line, wherein the electrode point (2) is arranged on the lower surface of the flaky substrate (1);
the sensing part is arranged on the sheet-shaped substrate (1), is connected with a second connecting line partially arranged in the sheet-shaped substrate (1) and is used for detecting the brain temperature or the intracranial pressure.
2. The multifunctional intracranial cortical electrode of claim 1, wherein the sensing element and the electrode points (2) are staggered on the lower surface.
3. The multifunctional intracranial cortical electrode of claim 1, wherein the sensing element is a semiconductor-type pressure sensor (3).
4. The multifunctional intracranial cortex electrode as recited in claim 3, wherein the electrode point (2) is an annular electrode point (2), the semiconductor type pressure sensor (3) is embedded in the annular electrode point (2), and the lower surface of the semiconductor type pressure sensor (3) is flush with the lower surface of the annular electrode point (2).
5. The multifunctional intracranial cortex electrode as claimed in claim 3, wherein the upper surface of the electrode point (2) is provided with a sink, and the semiconductor type pressure sensor (3) is arranged in the sink.
6. The multifunctional intracranial cortical electrode according to claim 3, wherein the semiconductor-type pressure sensor (3) is disposed on the upper surface of the electrode point (2).
7. The multifunctional intracranial cortical electrode of claim 1, wherein the sensing element is a flexible pressure sensor (4), the flexible pressure sensor (4) being spliced (1) to the sheet-form base.
8. The multifunctional intracranial cortical electrode according to claim 7, wherein the sensing element is a flexible pressure sensor (4), a through hole is formed in the flexible pressure sensor (4), the electrode point (2) is arranged in the through hole, and the lower surface of the flexible pressure sensor (4) is flush with the lower surface of the electrode point (2).
9. The multifunctional intracranial cortical electrode according to claim 1, wherein the sensing element is a temperature sensor (5), the electrode point (2) is an annular electrode point (2), the temperature sensor (5) is embedded in the annular electrode point (2), and the lower surface of the temperature sensor (5) is flush with the lower surface of the annular electrode point (2).
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| CN113440140A (en) * | 2021-07-12 | 2021-09-28 | 北京华科恒生医疗科技有限公司 | Multifunctional intracranial cortex electrode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113440140A (en) * | 2021-07-12 | 2021-09-28 | 北京华科恒生医疗科技有限公司 | Multifunctional intracranial cortex electrode |
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