CN113440142A

CN113440142A - Multifunctional intracranial deep electrode and monitoring system

Info

Publication number: CN113440142A
Application number: CN202110786780.7A
Authority: CN
Inventors: 陈晗青; 安小广; 龙新云
Original assignee: Beijing Hkhs Healthcare Co ltd
Current assignee: Beijing Hkhs Healthcare Co ltd
Priority date: 2021-07-12
Filing date: 2021-07-12
Publication date: 2021-09-28

Abstract

The application relates to a multifunctional intracranial deep electrode and a monitoring system, wherein the intracranial deep electrode comprises a deep electrode body, the deep electrode body comprises a tube body, a first connecting wire and an electrode, the first connecting wire is partially arranged in the tube body, and the electrode is arranged on the tube body and is connected with the first connecting wire; the sensing part is arranged on the deep electrode body, and the part of the second connecting line is arranged in the tube body. Deep electrode body can implant in the brain essence through the operation, the electrode can monitor the brain electricity, and export outside the brain through first connecting wire, sensing piece can be used for monitoring brain temperature or intracranial pressure, after multi-functional intracranial deep electrode implanted brain essence in, sensing piece can together implant in the brain essence, monitor brain temperature or intracranial pressure, and export outside the brain through the second connecting wire, make this application can monitor brain electricity-brain temperature simultaneously or monitor brain electricity-intracranial pressure simultaneously.

Description

Multifunctional intracranial deep electrode and monitoring system

Technical Field

The application relates to the technical field of medical equipment monitoring, in particular to a multifunctional intracranial deep electrode and a monitoring system.

Background

The intracranial deep electrode is widely applied to the fields of neurosurgery and cerebrospinal nerve function research, the deep electrode is implanted into the brain, an electric signal generated by neuron activity in the brain can be collected, and an electroencephalogram is formed after the electroencephalogram is processed externally, so that doctors are helped to diagnose the focus of a patient or the intracranial health condition. Because of the complexity of nerve activity, the diagnosis and treatment effects are influenced by monitoring errors which easily occur only by means of a single electroencephalogram signal, and the intracranial deep electrode can only be used for monitoring the electroencephalogram signal and has a single function. Therefore, a multifunctional monitoring electrode is urgently needed in clinic and scientific research, and various related monitoring data can be obtained through one-time implantation, so that the diagnosis efficiency and the positioning precision of the focus of a patient are improved, and the cure rate of the patient is further improved.

Disclosure of Invention

The present application provides a multifunctional intracranial deep electrode and monitoring system that can improve the accuracy of monitoring intracranial neural activity by integrating a pressure sensor and/or a temperature sensor on the multifunctional intracranial deep electrode.

In a first aspect, the application provides a multifunctional intracranial deep electrode, which adopts the following technical scheme:

a multifunctional intracranial deep electrode comprising:

a deep electrode body including a tube body, a first connection line partially provided in the tube body, and an electrode provided on the tube body and connected to the first connection line;

the sensing part is arranged on the deep electrode body, and the second connecting wire is partially arranged in the tube body and connected with the sensing part.

By adopting the technical scheme, the deep electrode body is provided with the electrode and the sensing part, the deep electrode body can be implanted into the brain parenchyma through an operation, the electrode can monitor brain electricity and output the brain electricity to the outside through the first connecting line, the sensing part can be used for monitoring brain temperature or intracranial pressure, after the deep electrode is implanted into the brain parenchyma, the sensing part can be implanted into the brain parenchyma together to monitor the brain temperature or the intracranial pressure and output the brain electricity to the outside through the second connecting line, so that the brain electricity-brain temperature monitoring device can monitor the brain electricity-brain temperature simultaneously, and the monitoring precision of nerve activity and the diagnosis precision of focuses are improved; the electroencephalogram-intracranial pressure monitoring system can monitor electroencephalogram-intracranial pressure simultaneously, and improve the monitoring precision of health conditions of patients suffering from nerve critical diseases.

Optionally, the sensing piece is at least one annular pressure sensor, and the annular pressure sensor is along the length direction cover of body is established distribute in the body.

Through adopting above-mentioned technical scheme, annular pressure sensor can with the shape phase-match of body, the body is located to the cover, implants back in the brain essence at deep electrode body, and annular pressure sensor can monitor intracranial pressure.

Optionally, the electrode and the annular pressure sensor are distributed at intervals along the length direction of the pipe body.

By adopting the technical scheme, the electrodes and the annular pressure sensors are distributed on the tube body at intervals, so that the distribution on the tube body is more uniform, the two can carry out multi-point monitoring on electroencephalogram and intracranial pressure in the length direction of the tube body, and the monitoring result has more practical value.

Optionally, the electrode is an annular electrode, and an outer diameter of the annular pressure sensor is not greater than an outer diameter of the annular electrode.

Optionally, the sensing member is a pressure sensing probe, and the pressure sensing probe is disposed at an end of the tube body.

By adopting the technical scheme, the pressure sensing probe can monitor the intracranial pressure at the end part of the tube body.

Optionally, the sensing member is a micro pressure sensing probe, and at least one micro pressure sensing probe is embedded in each electrode.

By adopting the technical scheme, the miniature pressure sensing probe is arranged on the electrode, so that the electroencephalogram and intracranial pressure can be synchronously and synchronously monitored.

Optionally, the sensing element is a thermocouple probe or a thermal resistance probe.

Optionally, at least one thermocouple probe or at least one thermal resistance probe is embedded in each electrode.

By adopting the technical scheme, the thermocouple probe can monitor the brain temperature, and the thermocouple is embedded on the electrode, so that the intracranial brain electricity and the brain temperature can be synchronously monitored in an apposition mode.

In a second aspect, the present application provides a monitoring system comprising a monitoring system as defined in any one of the first aspect, further comprising a receiving device, the first and second connection lines each being connected to the receiving device.

Through adopting above-mentioned technical scheme, first connecting wire and second connecting wire all are connected in receiving arrangement, and receiving arrangement can receive brain electricity, brain temperature and intracranial pressure signal simultaneously, for the data information of doctor's perfect brain electricity, brain temperature and intracranial pressure provides, improved diagnostic accuracy.

The utility model provides a pair of multi-functional intracranial deep electrode, be provided with electrode and sensing part on the deep electrode body, deep electrode body can implant in the brain essence through the operation, the electrode can monitor the brain electricity, and export outside the brain through first connecting wire, sensing part can be used for monitoring brain temperature or intracranial pressure, after multi-functional intracranial deep electrode implants in the brain essence, sensing part can together implant in the brain essence, monitor brain temperature or intracranial pressure, and export outside the brain through the second connecting wire, make this application can monitor brain electricity-brain temperature simultaneously, monitor brain electricity-intracranial pressure or monitor brain electricity-brain temperature-intracranial pressure, the operation risk has been reduced when improving operation efficiency.

Drawings

FIG. 1 is a cross-sectional view of a multifunctional intracranial deep electrode, in accordance with an embodiment of the present application.

FIG. 2 is a schematic diagram of a multifunctional intracranial deep electrode with a ring pressure sensor according to an embodiment of the present application.

FIG. 3 is a cross-sectional view of a multi-functional intracranial deep electrode having a pressure sensing probe in accordance with an embodiment of the present application.

FIG. 4 is a schematic diagram of a multifunctional intracranial deep electrode with a miniature pressure sensing probe according to an embodiment of the present application.

FIG. 5 is a schematic diagram of a multifunctional intracranial deep electrode with a thermocouple probe according to an embodiment of the present application.

Fig. 6 is a schematic structural diagram of a monitoring system according to an embodiment of the present application.

Description of reference numerals: 1. a pipe body; 2. an electrode; 31. an annular pressure sensor; 32. a pressure sensing probe; 33. a miniature pressure sensing probe; 34. a thermocouple probe; 4. an end portion; 5. and a receiving device.

Detailed Description

Various exemplary embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present disclosure unless specifically stated otherwise.

The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the disclosure, its application, or uses. That is, the structures and methods herein are shown by way of example to illustrate different embodiments of the structures and methods of the present disclosure. Those skilled in the art will understand, however, that they are merely illustrative of exemplary ways in which the disclosure may be practiced and not exhaustive. Furthermore, the figures are not necessarily to scale, some features may be exaggerated to show details of particular components.

Additionally, techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification as appropriate.

In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.

The intracranial deep electrode is widely applied to the fields of neurosurgery and cerebrospinal nerve function research, and can collect electric signals generated by neuron activity in the brain by implanting the intracranial deep electrode in the brain, and the electroencephalogram signals become electroencephalograms after external processing, thereby helping doctors diagnose the state of an illness of patients. Taking epilepsy as an example, monitoring of the brain electricity can help physicians determine areas of abnormal function and epileptogenic foci during epileptic seizures.

Intracranial pressure can the condition of the supplementary judgement intracranial hemorrhage or hydrocephalus, to the monitoring of intracranial pressure, first catheter drainage monitoring method, through drill out the hole that is used for the drainage on the skull, goes out the cerebrum with cerebrospinal fluid through hollow catheter drainage, is connected to outside pressure sensor or mercury column with the pipe again to finally convert pressure signal into readable digital signal, acquire intracranial pressure change information. The method not only needs single skull perforation, but also has the problem of information acquisition lag. The other is an intracerebral implantation monitoring method, namely, a pressure sensor is placed in the brain parenchyma, and intracranial pressure change information is obtained through the pressure sensor. However, this implantable monitoring method is single-function, can only be used to monitor intracranial pressure, and also increases the surgical risk for the patient.

Changes in temperature can generally reflect the health of the body, and the brain is no exception. Brain temperature is associated with a number of common ailments, including epilepsy. Time-dependent changes in brain temperature may be caused by fluctuations in Cerebral Blood Flow (CBF) and brain oxidative depletion metabolic rate (CMRO), both of which are associated with changes in neuronal activity. While epilepsy can cause violent neuron activity during the attack, so that the local metabolic activity of the brain is enhanced, and the temperature is raised. The monitoring of the temperature change of the brain can provide more data reference for doctors to accurately position the focal position of the epilepsy. However, at present, brain temperature monitoring is usually performed separately from electroencephalogram detection, which may cause that temperature changes in local areas of the brain, causes of epilepsy and complexity of brain structures cannot be obtained synchronously and in an apposition while electroencephalogram monitoring is performed, and accurate judgment on seizure rules and epileptic focus positions is difficult to be made depending on a single evaluation index.

In order to solve the technical problem, the application discloses a multifunctional intracranial deep electrode and a monitoring system.

Example 1:

multifunctional intracranial deep electrode includes deep electrode body and the sensing piece of setting on the deep electrode body, the sensing piece can be the pressure sensor who sets up on the deep electrode body, make the deep electrode can monitor intracranial pressure when monitoring the brain electricity, when carrying out intracranial pressure monitoring to the nerve critical patient, because the change of intracranial pressure is slow, and the change of brain electricity is then real-time rapid, survey brain temperature and intracranial pressure simultaneously, can extend the application range of cortex electrode, when intracranial implantation, obtain more relevant data, the improvement is to neural activity's monitoring precision.

The sensing part can also be a temperature sensor arranged on the deep electrode body, so that the deep electrode can monitor brain temperature while monitoring brain electricity, and the monitoring of the brain electricity and the brain temperature can help a doctor to accurately position epileptic focus, improve diagnosis precision and operation success rate, provide more reference indexes for the doctor to research epileptic seizure rules, and improve epileptic diagnosis accuracy and efficiency. Certainly, the pressure sensor and the temperature sensor can be arranged on the deep electrode at the same time, so that the electroencephalogram-brain temperature-intracranial pressure simultaneous monitoring is realized.

The deep electrode body may include a tube body 1, a first connection line partially provided in the tube body 1, and an electrode 2 provided on the tube body 1 and connected to the first connection line, and a second connection line provided in the tube body 1 and connected to a pressure sensor and/or a temperature sensor provided on the tube body 1.

The electroencephalogram and brain temperature sensor can be implanted into the deep part of the brain in a brain surgery or stereotactic mode, the pressure sensor and/or the temperature sensor arranged on the deep electrode body can be implanted into the brain parenchyma together, and when the sensing piece is the temperature sensor, the electroencephalogram and brain temperature map of the local area of the brain can be obtained synchronously and in apposition in real time, so that more reference indexes are provided for a doctor to research the seizure rule of epilepsy and locate the focal area of the epilepsy, and the accuracy and efficiency of epilepsy diagnosis are improved; when the sensing part is a pressure sensor, the electroencephalogram signal and the intracranial pressure signal can be synchronously monitored in real time, and a drainage hole does not need to be rotated out of the skull independently or the pressure sensor is implanted into the brain parenchyma independently, so that the operation efficiency is improved, and the operation risk is reduced; when the temperature sensor and the pressure sensor are simultaneously arranged on the tube body 1, the electroencephalogram-intracranial pressure monitoring can be simultaneously carried out, and the advantages can be integrated.

The following is a detailed description with reference to specific examples.

Referring to fig. 1, deep electrode body includes body 1, the part sets up the first connecting wire in body 1 and set up on body 1 and with the electrode 2 of first connecting wire, electrode 2 can include tip electrode 21 and a plurality of ring electrode 22, tip electrode 21 detains and establishes on one of body 1, ring electrode 22 establishes the surface of distributing in body 1 along the length direction cover of body 1, wherein, a first connecting wire of electrode 2 correspondence, many first connecting wires are all followed and are led to the other end of body 1 in body 1, and draw forth from the other end of body 1. In some preferred examples, the plurality of ring electrodes 22 may be equally spaced apart.

In this embodiment of the application, refer to fig. 2, the sensing piece can be pressure sensor, and pressure sensor can be annular pressure sensor 31, and annular pressure can be provided with a plurality ofly, and a plurality of annular pressure sensor 31 establish along the length direction cover of body 1 and distribute in the surface of body 1, and wherein, an annular pressure sensor 31 corresponds a second connecting wire, and many second connecting wires all lead to the other end of foretell body 1 in following body 1 to lead out from the other end of body 1.

In some embodiments, the electrodes 2 and the annular pressure sensor 31 are spaced apart along the length direction of the tube 1, and specifically, one pressure sensor may be disposed between every two electrodes 2, so that after the present application is implanted in the brain parenchyma, the annular pressure sensor 31 can monitor intracranial pressures at different depths.

Further, the plurality of annular pressure sensors 31 may be arranged at equal intervals, the distance between every two pressure sensors is equal to the distance between every two electrodes 2, and one end of the annular pressure sensor 31 is in contact with one end of the electrode 2, so that the pressure sensors can detect intracranial pressure near the position of the electrode 2, it should be noted that the outer diameter of the annular pressure sensor 31 is not greater than the outer diameter of the annular electrode.

In some embodiments, the annular pressure sensor 31 may be provided with one, two or three, and the number of pressure sensors is not limited as long as the pressure sensors are provided on the pipe body 1 and can monitor intracranial voltage.

Annular pressure sensor 31 can with 1 interference fit of body, annular pressure sensor 31's internal surface and the surface of body 1 extrude each other in order to fix annular pressure sensor 31 on body 1, and annular pressure sensor 31 also can be the welding on the surface of body 1, of course, also can set up flutedly at the surface of body 1, and pressure sensor joint is in the recess, does not do the restriction here to the connected mode between annular pressure sensor 31 and the body 1.

In other embodiments, referring to fig. 3, the sensing element may be a pressure sensing probe 32, the pressure sensing probe 32 may be disposed at the end 4 of the pipe body 1 and exposed from the end 4 of the pipe body 1, specifically, a through hole for the pressure sensing probe 32 to pass through is formed in the end electrode 21, the pressure sensing probe 32 is disposed through the through hole and partially exposed from the through hole, one end of the pressure sensing probe 32 located in the pipe body 1 is connected to a second connection line, and the second connection line is led out from the other end of the pipe body 1.

In some embodiments, referring to fig. 4, the sensing element may be a micro pressure sensing probe 34, a plurality of micro pressure sensing probes 34 may be provided, one micro pressure sensing probe 34 may correspond to one electrode 2, specifically, the micro pressure sensing probe 34 may be embedded on the electrode 2, further, the micro pressure sensing probe 34 may be embedded in an intermediate position in a length direction of the electrode 2, and the plurality of micro pressure sensing probes 34 are located on the same straight line, a channel through which a second connection line passes is opened on the electrode 2 and the catheter body 1, the micro pressure sensing probe 34 is connected to the second connection line, and the second connection line is led out from the other end of the catheter. Therefore, the intracranial pressure and brain temperature map of the local area of the brain can be obtained in real time, synchronously and orthotopically.

In other embodiments, each electrode 2 may correspond to a plurality of micro pressure sensing probes 34, specifically, a plurality of micro pressure sensing probes 34 may be distributed on the outer edge surface of each ring electrode 22, and the number of micro pressure sensing probes corresponding to each ring electrode may be 3, 4, or other realizable number.

In the embodiment of the present application, referring to fig. 5, the temperature sensor may be a thermocouple probe 34, the thermocouple probe 34 may be provided with a plurality of thermocouple probes, and may be one thermocouple probe corresponding to one electrode 2, specifically, the thermocouple probe 34 may be embedded on the electrode 2, further, the thermocouple probe 34 may be embedded in an intermediate position in the length direction of the electrode 2, and the plurality of thermocouple probes 34 are located on the same straight line, a channel through which a second connection line may pass is opened on the electrode 2 and the tube body 1, and the thermocouple probe 34 is connected to the second connection line, and the second connection line is led out from the other end of the catheter. Therefore, the electroencephalogram and the brain temperature map of the local brain area can be acquired in real time, synchronously and in apposition.

In other embodiments, each electrode 2 may correspond to a plurality of thermocouple probes 34, specifically, a plurality of thermocouple probes 34 may be distributed on the outer edge surface of each ring electrode 22, and the number of thermocouple probes corresponding to each ring electrode may be 3, 4, or other realizable number.

In some embodiments, one thermocouple probe 34 may be disposed between every two electrodes 2, and specifically, the thermocouple probe 34 may be embedded on the pipe body 1, and the distance between the thermocouple probe 34 and the two electrodes 2 adjacent thereto is equal. In another embodiment, the thermocouple probe 34 may be in contact with one of its two adjacent electrodes 2.

The temperature sensor may be a thermal resistance probe, and the thermal resistance probe may be installed in the same manner as the thermocouple probe 34.

Example 2:

the application also discloses a monitoring system, refer to fig. 6, monitoring system includes foretell multi-functional intracranial deep electrode and receiving arrangement 5, receiving arrangement 5 can be multimode brain machine interface subsystem, first connecting wire and second connecting wire all connect in multimode brain machine interface subsystem, multimode brain machine interface subsystem can receive the brain electricity simultaneously, brain temperature and intracranial pressure signal, and, the doctor can carry out the data monitoring of brain electricity, brain temperature and intracranial pressure through the man-machine interface of multimode brain machine interface subsystem, this application provides perfect data for the doctor, the diagnostic accuracy has been improved.

The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.

Claims

1. A multi-functional intracranial deep electrode comprising:

a deep electrode body including a tube body (1), a first connection line partially provided in the tube body, and an electrode (2) provided on the tube body and connected to the first connection line;

2. The multifunctional intracranial deep electrode as recited in claim 1, wherein the sensing member is at least one annular pressure sensor (31), and the annular pressure sensor (31) is sleeved and distributed on the tube body (1) along the length direction of the tube body (1).

3. The multifunctional intracranial deep electrode as recited in claim 2, wherein the electrode (2) and the annular pressure sensor (31) are spaced apart along the length of the tube (1).

4. The multifunctional intracranial deep electrode as recited in claim 2, wherein the electrode (2) is a ring electrode (22), and the outer diameter of the ring pressure sensor (31) is not greater than the outer diameter of the ring electrode (22).

5. The multifunctional intracranial deep electrode as recited in claim 1, wherein the sensing element is a pressure sensing probe (32), and the pressure sensing probe (32) is disposed at the end (4) of the catheter body (1).

6. The multifunctional intracranial deep electrode as recited in claim 1, wherein the sensing element is a micro pressure sensing probe (33), and at least one micro pressure sensing probe (33) is embedded on each electrode (2).

7. The multifunctional intracranial deep electrode as recited in claim 1, wherein the sensing element is a thermocouple probe (34) or a thermal resistance probe.

8. The multifunctional intracranial deep electrode as recited in claim 7, wherein at least one of the thermocouple probe (34) or the thermal resistance probe is embedded in each of the electrodes (2).

9. A monitoring system comprising a device according to any of claims 1-8, further comprising a receiving device (5), said first and second connection lines each being connected to said receiving device (5).