CN215234231U - High-purity nanometer silicon nitride powder preparation equipment - Google Patents
High-purity nanometer silicon nitride powder preparation equipment Download PDFInfo
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- CN215234231U CN215234231U CN202121413627.1U CN202121413627U CN215234231U CN 215234231 U CN215234231 U CN 215234231U CN 202121413627 U CN202121413627 U CN 202121413627U CN 215234231 U CN215234231 U CN 215234231U
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Abstract
The utility model discloses a high-purity nanometer silicon nitride powder preparation facilities relates to nanometer silicon nitride field, including the supporting baseplate, the both sides limit symmetric welding of supporting baseplate has the connecting plate, the top surface of connecting plate has evenly seted up the logical hole, one a side bolted connection of supporting baseplate has control panel, the top surface horizontal welding of supporting baseplate has main treatment tank, the outside limit bolted connection of main treatment tank has additive box, the perpendicular downward welding of the outside bottom surface of main treatment tank has the discharging pipe, the outside limit bolted connection of discharging pipe has the bleeder valve, the outside top surface of main treatment tank has welded the intake pipe perpendicularly, the one end horizontal welding of main treatment tank has the inlet pipe, the one end horizontal welding of main treatment tank has the outlet duct. The utility model discloses device design simple structure is easy and simple to handle, has adopted the mobile processing mode of high temperature to make area of contact bigger, lets more thorough high-efficient of reaction, makes the purity after its reaction higher.
Description
Technical Field
The utility model relates to a nanometer silicon nitride technical field specifically is a high-purity nanometer silicon nitride powder preparation facilities.
Background
Silicon nitride is very strong, especially hot pressed silicon nitride, and is one of the hardest substances in the world. The high-temperature-resistant aluminum alloy is extremely high-temperature-resistant, the strength can be maintained to 1200 ℃ without reduction, the aluminum alloy can not be melted into a melt after being heated, the aluminum alloy can not be decomposed until 1900 ℃, and the aluminum alloy has remarkable chemical resistance, can resist almost all inorganic acids and caustic soda solution with the concentration of less than 30 percent, and can resist corrosion of a plurality of organic acids; and is a high-performance electric insulating material. It is an important structural ceramic material, has high hardness, self lubricating property and abrasion resistance, and is an atomic crystal; is resistant to oxidation at high temperature. It can resist cold and hot impact, and can be heated to above 1000 deg.C in air, and can be rapidly cooled and then rapidly heated, and can not be broken. Because of the excellent properties of silicon nitride ceramics, it is often used to manufacture mechanical components such as bearings, turbine blades, mechanical seal rings, and permanent molds.
The existing purification methods are all that silicon nitride immobilization reaction operation is carried out, so that the contact area is limited, the reaction is not thorough, and meanwhile, the incomplete reaction caused by uneven heating is an important factor for incomplete purification.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a high-purity nanometer silicon nitride powder preparation equipment, still have some impurity doping to present when producing to put forward in solving above-mentioned background art, make the purity of silicon nitride not enough, can't reach the degree of needs, present some purification modes all are to make silicon nitride immobilization reaction operation, make area of contact restricted, let thorough inadequately of its reaction, the inhomogeneous incompleteness that has led to the reaction that is heated simultaneously, all be the problem that becomes the not complete important factor of purification inadequately.
In order to achieve the above object, the utility model provides a following technical scheme:
a high-purity nanometer silicon nitride powder preparation device comprises a supporting base plate, wherein connecting plates are symmetrically welded on two side edges of the supporting base plate, through holes are uniformly formed in the top surface of each connecting plate, one side edge of the supporting base plate is connected with a control panel through a bolt, a main treatment tank is horizontally welded on the top surface of the supporting base plate, an additive box is connected on the outer side edge of the main treatment tank through a bolt, a discharge pipe is vertically and downwards welded on the bottom surface of the outer side of the main treatment tank, a discharge valve is connected on the outer side edge of the discharge pipe through a bolt, an air inlet pipe is vertically welded on the top surface of the outer side of the main treatment tank, a feed pipe is horizontally welded at one end of the main treatment tank, an air outlet pipe is horizontally welded at one end of the main treatment tank, an inner heat preservation layer is fixedly arranged on the inner side edge of the main treatment tank, a heating pipe is arranged on the inner side edge of the inner heat preservation layer, and a middle cross rod is horizontally welded on the inner side edge of the inner heat preservation layer, the utility model discloses a heating device for heating a medium cross bar, including the top surface of bottom plate, the inboard side of well horizontal pole is provided with the heater strip, the even welding of the inboard side of interior heat preservation has the spacing block, the top surface of additive box is provided with sealed apron, the inboard side welding of additive box has the funnel piece, the inboard side bolted connection of additive box has the extraction pump, a draw-in groove has been seted up to the top surface of supporting baseplate.
As a preferred embodiment of the present invention: the number of the supporting bottom plates is two, the two supporting bottom plates are arranged in parallel, the number of the connecting plates is twice that of the supporting bottom plates, and two symmetrical supporting bottom plates are respectively and fixedly arranged on two side edges of the supporting bottom plates and close to the bottom surface.
As a preferred embodiment of the present invention: the main processing tank is horizontally and fixedly arranged at the inner side edge of the top clamping groove, the supporting bottom plate is fixedly arranged at the outer side edge of the main processing tank respectively and close to the two end positions, the discharging valve and the control panel are arranged through electric connection, and the discharging pipe is kept to be communicated with the inside of the main processing tank.
As a preferred embodiment of the present invention: the fixed one end position that keeps away from the outlet duct that sets up in the outside limit of main treatment jar of intake pipe, the one end vertical fixation of inlet pipe sets up the one end that is close to the top surface border position at main treatment jar, and the inlet duct horizontal fixation sets up the one end position of keeping away from the inlet duct at main treatment jar, and the one end vertical fixation of outlet duct sets up the one end that is close to the bottom surface border position at main treatment jar.
As a preferred embodiment of the present invention: the middle cross rod is horizontally and fixedly arranged at the axis position in the inner side edge of the inner heat-insulating layer, the heating wires are spirally wound on the inner side of the middle cross rod and close to the edge position, the isolation blocks are all made of high-density heat-resistant materials, and the isolation blocks are all in butt joint with the insertion end positions of the air inlet pipe and the air outlet pipe.
As a preferred embodiment of the present invention: the input of extraction pump keeps leading to the setting with the bottom of funnel piece, and the output of extraction pump runs through the inboard side position that main treatment jar extended to interior heat preservation through the pipeline, and the top card groove level is established and is put at the top surface central point of supporting baseplate.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses a design tank structure makes more sealed heat preservation, drop into the inside that the raw materials enters into interior heat preservation from the inlet pipe, put in the diluent simultaneously in the inside of the inside funnel piece of addition agent box, make heating pipe and heater strip carry out the heating action under control panel's setting, make the inside temperature of main treatment jar reach 1350 ℃ -1450 ℃, and because well horizontal pole level sets up the central point in the main treatment jar, so make the area of contact of raw materials further increase, make raw materials and nitrogen gas flow in the inside of interior heat preservation after the intake pipe pours into nitrogen gas into, make the reaction use for 2-6 hours, then make the diluent content enter the inside of interior heat preservation for the abundant reaction for 5% -15% under the extraction of extraction pump, make purer silicon nitride discharge from the discharging pipe collection processing after opening the bleeder valve control after accomplishing the reaction, the device has a simple design structure, is simple and convenient to operate, and has a larger contact area by adopting a high-temperature fluidity treatment mode, so that the reaction is more thorough and efficient, and the purity of the reaction is higher.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic perspective view of an apparatus for preparing high purity nano-sized silicon nitride powder;
FIG. 2 is a schematic structural diagram of the front section connection details of a main treatment tank of the high-purity nano silicon nitride powder preparation equipment;
FIG. 3 is a schematic structural diagram of a main treatment tank side view cross-sectional connection detail of a high-purity nano silicon nitride powder preparation apparatus;
FIG. 4 is a schematic structural diagram of a side view connection detail of a supporting baseplate of a high-purity nano silicon nitride powder preparation device.
In the figure: 1. a support base plate; 2. a connecting plate; 3. a through hole; 4. a control panel; 5. a main treatment tank; 6. an additive cartridge; 7. a discharge pipe; 8. a discharge valve; 9. an air inlet pipe; 10. a feed pipe; 11. an air outlet pipe; 12. an inner insulating layer; 13. heating a tube; 14. a middle cross bar; 15. heating wires; 16. an isolation block; 17. sealing the cover plate; 18. a funnel block; 19. a pump; 20. and a top clamping groove.
Detailed Description
Referring to fig. 1, in an embodiment of the present invention, a high purity nanometer silicon nitride powder manufacturing apparatus includes a support base plate 1, two connection plates 2 are symmetrically welded to two side edges of the support base plate 1, the number of the support base plates 1 is two, and the two support base plates 1 are arranged in parallel, the number of the connection plates 2 is twice the number of the support base plates 1, and are symmetrically and fixedly arranged at positions close to the bottom surfaces of the two side edges of the support base plate 1, two-by-two sets of the connection plates 2 are respectively provided with through holes 3, one side edge of one support base plate 1 is bolted with a control panel 4, a main treatment tank 5 is horizontally welded to the top surface of the support base plate 1, an additive box 6 is bolted to the outer side edge of the main treatment tank 5, a discharge pipe 7 is vertically welded downwards to the outer side bottom surface of the main treatment tank 5, the outer side edge of the discharge pipe 7 is bolted with a discharge valve 8, the main treatment tank 5 is horizontally and fixedly arranged at an inner side edge position of a top clamping groove 20, the supporting bottom plate 1 is fixedly arranged at the position, close to two ends, of the outer side edge of the main treatment tank 5 respectively, the discharge valve 8 and the control panel 4 are arranged in an electrically connected mode, the discharge pipe 7 is communicated with the interior of the main treatment tank 5, the air inlet pipe 9 is perpendicularly welded on the top surface of the outer side of the main treatment tank 5, the inlet pipe 10 is horizontally welded at one end of the main treatment tank 5, the outlet pipe 11 is horizontally welded at one end of the main treatment tank 5, the air inlet pipe 9 is fixedly arranged at the position, far away from the outlet pipe 11, of the outer side edge of the main treatment tank 5, one end of the inlet pipe 10 is vertically fixedly arranged at the position, close to the edge of the top surface, of the main treatment tank 5, the outlet pipe 11 is horizontally fixedly arranged at the position, far away from the outlet pipe 10, of the inlet pipe 11 is vertically fixedly arranged at the position, close to the edge of the bottom surface, of the end of the main treatment tank 5;
referring to fig. 2-4, in an embodiment of the present invention, a high-purity nano silicon nitride powder preparation apparatus, wherein an inner insulating layer 12 is fixedly disposed on an inner side of a main treatment tank 5, a heating pipe 13 is disposed on an inner side of the inner insulating layer 12, a middle cross rod 14 is horizontally welded on the inner side of the inner insulating layer 12, a heating wire 15 is disposed on the inner side of the middle cross rod 14, a spacer block 16 is uniformly welded on the inner side of the inner insulating layer 12, the middle cross rod 14 is horizontally and fixedly disposed on an inner side axis position of the inner insulating layer 12, the heating wire 15 is spirally wound on the inner side of the middle cross rod 14 near the edge position, the spacer block 16 is made of a high-density heat-resistant material, the spacer block 16 is butt-jointed and disposed at the insertion end position of an air inlet pipe 9 and an air outlet pipe 11, a sealing cover plate 17 is disposed on a top surface of an additive box 6, a funnel block 18 is welded on the inner side of the additive box 6, the inboard side bolted connection of additive box 6 has extraction pump 19, and top draw-in groove 20 has been seted up to the top surface of supporting baseplate 1, and the input of extraction pump 19 keeps leading to with the bottom of funnel piece 18 and connects the setting, and the output of extraction pump 19 runs through main treatment tank 5 through the pipeline and extends to the inboard side position of interior heat preservation 12, and the top draw-in groove 20 level is seted up and is put at the top surface central point of supporting baseplate 1.
The components are standard parts in general or known to those skilled in the art, and their structure and principle are known to those skilled in the art through technical manuals or through routine experimentation.
The utility model discloses a theory of operation is:
the supporting bottom plate 1 is inserted into the through hole 3 through a bolt and then fixed at a designated position, raw materials are fed from the feeding pipe 10 and enter the inner heat-insulating layer 12, meanwhile, the diluent is fed into the inner funnel block 18 of the additive box 6, the heating tube 13 and the heating wire 15 are heated under the control panel 4, so that the internal temperature of the main treatment tank 5 reaches 1350 ℃ -1450 ℃, and because the middle cross bar 14 is horizontally arranged at the central position of the main treatment tank 5, so that the contact area of the raw materials is further increased, the raw materials and the nitrogen flow in the inner heat-insulating layer 12 after the nitrogen is injected into the air inlet pipe 9, the reaction time is 2-6 hours, then the diluent content is 5 to 15 percent under the pumping of the pump 19 and enters the inner part of the inner heat-insulating layer 12 for full reaction, after the reaction is finished, the discharge valve 8 is controlled to be opened, so that the purer silicon nitride is discharged from the discharge pipe 7 and collected.
The above-mentioned, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (6)
1. The high-purity nanometer silicon nitride powder preparation equipment comprises a supporting base plate (1) and is characterized in that connecting plates (2) are symmetrically welded on two side edges of the supporting base plate (1), through holes (3) are uniformly formed in the top surface of each connecting plate (2), one side edge of the supporting base plate (1) is connected with a control panel (4) through bolts, a main treatment tank (5) is horizontally welded on the top surface of the supporting base plate (1), an additive box (6) is connected to the outer side edge of the main treatment tank (5) through bolts, a discharging pipe (7) is vertically welded downwards on the outer side bottom surface of the main treatment tank (5), a discharging valve (8) is connected to the outer side edge of the discharging pipe (7) through bolts, an air inlet pipe (9) is vertically welded on the outer side top surface of the main treatment tank (5), and a feeding pipe (10) is horizontally welded at one end of the main treatment tank (5), the one end horizontal welding of main treatment jar (5) has outlet duct (11), the fixed interior heat preservation (12) that is provided with of inboard side of main treatment jar (5), the inboard side of interior heat preservation (12) is provided with heating pipe (13), the inboard side horizontal welding of interior heat preservation (12) has well horizontal pole (14), the inboard side of well horizontal pole (14) is provided with heater strip (15), the inboard side even welding of interior heat preservation (12) has spacing block (16), the top surface of additive box (6) is provided with sealed apron (17), the inboard side welding of additive box (6) has funnel piece (18), the inboard side bolted connection of additive box (6) has extraction pump (19), top draw-in groove (20) have been seted up to the top surface of bottom plate (1).
2. The equipment for preparing high-purity nanometer silicon nitride powder according to claim 1, characterized in that the number of the supporting bottom plates (1) is two, the two supporting bottom plates (1) are arranged in parallel, the number of the connecting plates (2) is twice that of the supporting bottom plates (1), and the two connecting plates are symmetrically and fixedly arranged on two sides of the supporting bottom plates (1) near the bottom surface in a group two by two.
3. The equipment for preparing high-purity nanometer silicon nitride powder according to claim 1, characterized in that the main treatment tank (5) is horizontally and fixedly arranged at the inner side position of the top clamping groove (20), the support bottom plate (1) is respectively and fixedly arranged at the outer side of the main treatment tank (5) close to the two end positions, the discharge valve (8) and the control panel (4) are arranged through electric connection, and the discharge pipe (7) and the inside of the main treatment tank (5) are kept in through connection.
4. The apparatus for preparing high-purity silicon nitride nanopowder according to claim 1, wherein the gas inlet pipe (9) is fixedly arranged at a position of an outer side edge of the main treatment tank (5) far from the gas outlet pipe (11), one end of the gas inlet pipe (10) is vertically and fixedly arranged at a position of one end of the main treatment tank (5) near the edge of the top surface, the gas outlet pipe (11) is horizontally and fixedly arranged at a position of one end of the main treatment tank (5) far from the gas inlet pipe (10), and one end of the gas outlet pipe (11) is vertically and fixedly arranged at a position of one end of the main treatment tank (5) near the edge of the bottom surface.
5. The equipment for preparing high-purity nanometer silicon nitride powder according to claim 1, characterized in that the middle cross bar (14) is horizontally and fixedly arranged at the axial line position of the inner side edge of the inner heat-insulating layer (12), the heating wire (15) is spirally wound on the inner side of the middle cross bar (14) close to the edge position, the isolation blocks (16) are all made of high-density heat-resistant materials, and the isolation blocks (16) are all butted at the splicing end positions of the air inlet pipe (9) and the air outlet pipe (11).
6. The equipment for preparing high-purity nanometer silicon nitride powder according to claim 1, characterized in that the input end of the extraction pump (19) is communicated with the bottom end of the funnel block (18), the output end of the extraction pump (19) penetrates through the main treatment tank (5) through a pipeline and extends to the inner side position of the inner heat-insulating layer (12), and the top clamping groove (20) is horizontally arranged at the center position of the top surface of the support bottom plate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121413627.1U CN215234231U (en) | 2021-06-24 | 2021-06-24 | High-purity nanometer silicon nitride powder preparation equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121413627.1U CN215234231U (en) | 2021-06-24 | 2021-06-24 | High-purity nanometer silicon nitride powder preparation equipment |
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| CN215234231U true CN215234231U (en) | 2021-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202121413627.1U Active CN215234231U (en) | 2021-06-24 | 2021-06-24 | High-purity nanometer silicon nitride powder preparation equipment |
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| CN (1) | CN215234231U (en) |
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2021
- 2021-06-24 CN CN202121413627.1U patent/CN215234231U/en active Active
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