CN215220732U - Large-size double-sided solar cell - Google Patents
Large-size double-sided solar cell Download PDFInfo
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- CN215220732U CN215220732U CN202120663269.3U CN202120663269U CN215220732U CN 215220732 U CN215220732 U CN 215220732U CN 202120663269 U CN202120663269 U CN 202120663269U CN 215220732 U CN215220732 U CN 215220732U
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Abstract
The utility model discloses a large-size double-sided solar cell, which comprises a silicon substrate, a semiconductor layer, a silicon oxide layer, a front silicon nitride film, a silicon oxide film and a front electrode which are sequentially arranged on the front side of the silicon substrate, and a silicon oxide layer, an aluminum oxide layer, a back silicon nitride film and a back electrode which are sequentially arranged on the back side of the silicon substrate; the front electrode comprises a front main grid and a front auxiliary grid, and the front auxiliary grid penetrates through the silicon oxide film, the front silicon nitride film and the silicon oxide layer and then is in electric contact with the semiconductor layer; the back side electrode comprises a back side main gate and a back side auxiliary gate which are vertical to each other, and the back side auxiliary gate penetrates through the back side silicon nitride film, the aluminum oxide layer and the silicon oxide layer and then is in electric contact with the silicon substrate. Implement the utility model discloses, can improve jumbo size double-sided battery's light utilization efficiency, promote solar cell's conversion efficiency.
Description
Technical Field
The invention relates to the field of crystalline silicon solar cells, in particular to a large-size double-sided solar cell.
Background
On one hand, the silicon substrate is large-sized, which is a necessary trend for the development of the silicon solar cell industry, the large-sized silicon substrate can effectively reduce the component cost, and meanwhile, the conversion efficiency of the solar cell can be improved to a certain extent. On the other hand, the silicon substrate adopted by the solar cell industry at present is generally an M0 silicon substrate, the size of which is 156mm × 156mm, and the device size matched with the silicon substrate can only accommodate a 166-type silicon substrate at most. Therefore, how to realize smooth mass production of large-size silicon substrate solar cells on the original equipment through the structural design and the process design of the solar cells is a research hotspot of technicians in the field.
On the basis of referring to the structural design of a small-sized silicon substrate solar cell, the number of front side secondary gate electrodes of the conventional large-sized silicon substrate solar cell is 106 and 122, and the conventional large-sized silicon substrate solar cell is not provided with an anti-breaking gate structure; the number of the back side sub-gate electrodes is 130-150, and the back side sub-gate electrodes are not provided with the anti-breaking gate structures. This limits the fine grid space, making the slurry costly. In addition, the conventional front side antireflection film structure generally comprises a silicon oxide layer and a silicon nitride laminated film, and the antireflection film structure is difficult to adapt to the requirement of a large-size silicon substrate and cannot maximize the light utilization efficiency.
Disclosure of Invention
The present invention is directed to a large-sized double-sided solar cell, which can improve light utilization efficiency and conversion efficiency of the solar cell.
In order to solve the technical problem, the invention discloses a large-size double-sided solar cell which comprises a silicon substrate, a semiconductor layer, a silicon oxide layer, a front silicon nitride film, a silicon oxide film and a front electrode which are sequentially arranged on the front surface of the silicon substrate, and the silicon oxide layer, the aluminum oxide layer, a back silicon nitride film and the back electrode which are sequentially arranged on the back surface of the silicon substrate;
the front electrode comprises a front main grid and a front auxiliary grid, and the front auxiliary grid penetrates through the silicon oxide film, the front silicon nitride film and the silicon oxide layer and then is in electric contact with the semiconductor layer; the back side electrode comprises a back side main gate and a back side auxiliary gate which are vertical to each other, and the back side auxiliary gate penetrates through the back side silicon nitride film, the aluminum oxide layer and the silicon oxide layer and then is in electric contact with the silicon substrate.
As an improvement of the technical scheme, the thickness of the silicon oxide film is 4-5nm, the thickness of the front silicon nitride film is 70-100nm, and the refractive index of the front silicon nitride film is 2.1-2.2.
As an improvement of the above technical solution, the front surface silicon nitride film includes a first front surface silicon nitride film and a second front surface silicon nitride film, which are sequentially disposed on the silicon oxide layer, wherein the thickness of the first front surface silicon nitride film is 10-20nm, and the thickness of the second front surface silicon nitride film is 60-80 nm.
As an improvement of the technical scheme, the thickness of the aluminum oxide layer is 5-15nm, the thickness of the back silicon nitride film is 70-80nm, and the refractive index of the back silicon nitride film is 2.1-2.2.
As an improvement of the above technical solution, the back surface silicon nitride film includes a first back surface silicon nitride film, a second back surface silicon nitride film, and a third back surface silicon nitride film sequentially provided on the aluminum oxide layer.
In an improvement of the above technical solution, the thickness of the first back side silicon nitride film is 30 to 45nm, the thickness of the second back side silicon nitride film is 18 to 25nm, and the thickness of the third back side silicon nitride film is 7 to 10 nm.
As an improvement of the technical scheme, an anti-breaking grid structure is arranged between the adjacent front side auxiliary grids, and an anti-breaking grid structure is arranged between the adjacent back side auxiliary grids.
As an improvement of the technical scheme, the anti-breaking grid is of a discontinuous structure.
As an improvement of the technical scheme, the number of the front side auxiliary grids is 150 grids in 128-180 grids.
As an improvement of the technical scheme, the side length of the silicon substrate is more than or equal to 166 mm.
The implementation of the invention has the following beneficial effects:
1. the utility model provides a two-sided solar cell of jumbo size has set up the silicon oxide film on the positive front silicon nitride film of silicon substrate, and it can cooperate with positive silicon nitride film mutually, effectively promotes the utilization efficiency of sunlight. In addition, the silicon oxide film can be better adapted to the front electrode structure and the anti-breaking grid structure, so that the conversion efficiency of the solar cell is improved.
2. The utility model discloses a two-sided solar cell of jumbo size has all added at positive vice bars of solar cell and the vice bars in the back and has prevented disconnected bars structure, and this kind prevents disconnected bars structure and has reduced the disconnected bars of electrode printing in-process, has effectively refined the grid line. In addition, the anti-breaking grid structure adopts a discontinuous structure (DASH), and the structure can effectively reduce the shading rate of the anti-breaking grid structure and improve the conversion efficiency.
Drawings
FIG. 1 is a schematic view of a large-scale bifacial solar cell in accordance with the present invention;
FIG. 2 is a schematic diagram of the front side of a large-scale bifacial solar cell in accordance with the present invention;
FIG. 3 is a schematic diagram of the structure of the back side of a large-sized bifacial solar cell of the present invention;
fig. 4 is a partially enlarged view of a portion a in fig. 3.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. It is only noted that the invention is intended to be limited to the specific forms set forth herein, including any reference to the drawings, as well as any other specific forms of embodiments of the invention.
Referring to fig. 1, the present embodiment provides a large-sized double-sided solar cell, which includes a silicon substrate 1, a semiconductor layer 11, a silicon oxide layer 2, a front-side silicon nitride film 3, a silicon oxide film 4, and a front-side electrode 5, which are sequentially disposed on a front side of the silicon substrate 1; a silicon oxide layer 6, an aluminum oxide layer 7, a back silicon nitride film 8 and a back electrode 9 which are arranged on the back of the silicon substrate 1 in sequence. The front electrode 5 comprises a front main grid 51 and a front auxiliary grid 52, and the front auxiliary grid 52 penetrates through the silicon oxide film 4, the front silicon nitride film 3 and the silicon oxide layer 2 and then is in electric contact with the semiconductor layer 11; the back electrode 9 includes a back main gate 91 and a back sub-gate 92, and the back sub-gate 92 contacts the silicon substrate 1 through the back silicon nitride film 8, the alumina layer 7, and the silica layer 6. Wherein the thickness of the silicon oxide film is 4-5 nm. The silicon oxide film 8 can cooperate with the front silicon nitride film 3 to improve the light utilization efficiency of the front of the large-size double-sided solar cell and the conversion efficiency.
Specifically, the silicon substrate 1 is P-type single crystal silicon or N-type single crystal silicon, but is not limited thereto. Preferably, a P-type monocrystalline silicon substrate with the resistivity of 0.5-2 omega cm is selected. The silicon substrate 1 is square, the side length of the silicon substrate is more than or equal to 166mm, preferably 166mm, and the silicon substrate can adapt to the existing production equipment of M0-M4 silicon wafers.
Specifically, the thicknesses of the silicon oxide layer 2 and the silicon oxide layer 6 are 1-5nm, and the silicon oxide layers are formed through an annealing process, so that dangling bonds on the surface of a silicon substrate can be effectively reduced, and the conversion efficiency of the solar cell is improved.
Specifically, the thickness of the silicon oxide film 4 is 4 to 5nm, and illustratively 4.2nm, 4.5nm, or 4.9nm, but is not limited thereto. The thickness of the front surface silicon nitride film 3 is 70 to 100nm, illustratively 75nm, 78nm, 85nm, 90nm or 98nm, but is not limited thereto. The refractive index of the front silicon nitride film is 2.1-2.2.
Specifically, the front surface silicon nitride film 3 may have a single-layer structure or a stacked-layer structure. Preferably, the front silicon nitride film is of a laminated structure, which can better improve the front light utilization efficiency of the bifacial solar cell. Specifically, the front surface silicon nitride film 3 includes a first front surface silicon nitride film 31 and a second front surface silicon nitride film 32 which are sequentially provided on the silicon oxide layer 2, and the thickness of the first front surface silicon nitride film 31 is 10 to 20nm, and is exemplified by 12nm, 14nm, and 18nm, but is not limited thereto; the thickness of the second front side silicon nitride film 32 is 60 to 80nm, and is illustratively 64nm, 68nm, 70nm, 74nm, but is not limited thereto. The nitrogen-silicon ratio of the first front surface silicon nitride film 31 is 9 to 10, and the nitrogen-silicon ratio of the second front surface silicon nitride film 32 is 15 to 17. The silicon nitride films with different compositions have different refractive indexes, so that the light utilization efficiency is effectively optimized.
Specifically, the thickness of the aluminum oxide layer 7 is 5 to 15nm, and exemplary may be 5nm, 8nm, 10nm, but is not limited thereto. The thickness of the back silicon nitride film 8 is 70 to 80nm, illustratively 72nm, 76nm or 78nm, but is not limited thereto. The refractive index of the back silicon nitride film 8 is 2.1 to 2.2.
Specifically, the back silicon nitride film 8 may have a single-layer structure or a stacked-layer structure. Preferably, the back surface silicon nitride film 8 has a laminated structure including a first back surface silicon nitride film 81, a second back surface silicon nitride film 82, and a third back surface silicon nitride film 83 provided on the alumina layer 7 in this order. The thickness of the first back silicon nitride film 81 is 30 to 45nm, and is illustratively 32nm, 35nm, 39nm, 44nm, but is not limited thereto; the thickness of the second back silicon nitride film 82 is 18 to 25nm, illustratively 19nm, 20nm, 24nm, but is not limited thereto; the thickness of the third back side silicon nitride film is 7 to 10nm, and 7nm and 9nm are exemplified, but not limited thereto. Further, the nitrogen-silicon ratios of the three back silicon nitride films are 3-4, 4.5-6 and 6.5-7.5, respectively. By the laminated structure, the light utilization efficiency of the back surface of the solar cell can be improved.
Further, in order to improve the light utilization efficiency, referring to fig. 2 and fig. 3, in this embodiment, one or more front-side anti-breaking gate structures 53/83 are disposed between the adjacent front-side sub-gates 52 and the adjacent back-side sub-gates 82, and the anti-breaking gate structures can effectively prevent the gate lines from being broken, thereby reducing the width of the gate lines, reducing the area of the silicon substrate 1 shielded by the gate lines, and improving the light utilization efficiency.
Further, the anti-break grid structure 53/83 is a discontinuous structure (similar to DASH line segment, see fig. 4), and this anti-break grid structure can further reduce the shading area, and ensure the anti-break grid effect at the same time.
Specifically, in the present embodiment, the number of the front side sub-grids 52 is 128-150, and exemplary numbers are 130, 140, 145 and 149, but not limited thereto. The number of the back sub-grids 82 is 150-180, and the exemplary number is 150, 156, 160, 168, 174, but not limited thereto. Due to the fact that the width of the grid lines is reduced by the anti-breaking grid structure, the number of the grid lines is increased, the effect of collecting carriers is enhanced, and conversion efficiency is improved.
In summary, in the large-sized double-sided solar cell of the embodiment, the silicon oxide film is disposed on the front-side silicon nitride film on the front side of the silicon substrate, and the silicon oxide film and the front-side silicon nitride film cooperate with each other to effectively improve the utilization efficiency of sunlight. In addition, the silicon oxide film can be better adapted to the front electrode structure and the anti-breaking grid structure, so that the conversion efficiency of the solar cell is improved. In addition, the anti-breaking grid structures are added to the front side auxiliary grid and the back side auxiliary grid of the solar cell, so that the anti-breaking grid structures reduce broken grids in the electrode printing process and effectively refine grid lines. In addition, the anti-breaking grid structure adopts a discontinuous structure (DASH), and the structure can effectively reduce the shading rate of the anti-breaking grid structure and improve the conversion efficiency.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A large-size double-sided solar cell is characterized by comprising a silicon substrate, a semiconductor layer, a silicon oxide layer, a front silicon nitride film, a silicon oxide film and a front electrode which are sequentially arranged on the front side of the silicon substrate, and a silicon oxide layer, an aluminum oxide layer, a back silicon nitride film and a back electrode which are sequentially arranged on the back side of the silicon substrate;
the front electrode comprises a front main grid and a front auxiliary grid, and the front auxiliary grid penetrates through the silicon oxide film, the front silicon nitride film and the silicon oxide layer and then is in electric contact with the semiconductor layer; the back side electrode comprises a back side main gate and a back side auxiliary gate which are vertical to each other, and the back side auxiliary gate penetrates through the back side silicon nitride film, the aluminum oxide layer and the silicon oxide layer and then is in electric contact with the silicon substrate.
2. The large-size bifacial solar cell of claim 1, wherein the silicon oxide film has a thickness of 4-5nm, the front side silicon nitride film has a thickness of 70-100nm, and the refractive index is 2.1-2.2.
3. The large-size bifacial solar cell of claim 2, wherein said front side silicon nitride film comprises a first front side silicon nitride film and a second front side silicon nitride film disposed on said silicon oxide layer in sequence, said first front side silicon nitride film having a thickness of 10-20nm and said second front side silicon nitride film having a thickness of 60-80 nm.
4. The large scale bifacial solar cell of claim 1, wherein the aluminum oxide layer has a thickness of 5-15nm, the back side silicon nitride film has a thickness of 70-80nm, and the refractive index is 2.1-2.2.
5. The large-scale bifacial solar cell of claim 4, wherein the back side silicon nitride film comprises a first back side silicon nitride film, a second back side silicon nitride film, and a third back side silicon nitride film sequentially disposed on the aluminum oxide layer.
6. The large-size bifacial solar cell of claim 5, wherein the first back side silicon nitride film has a thickness of 30-45nm, the second back side silicon nitride film has a thickness of 18-25nm, and the third back side silicon nitride film has a thickness of 7-10 nm.
7. The large-size bifacial solar cell of claim 1, wherein an anti-break grid structure is disposed between adjacent said front side subgrids and an anti-break grid structure is disposed between adjacent said back side subgrids.
8. The large-size bifacial solar cell of claim 7, wherein the break-preventing fence is a discontinuous structure.
9. The large-size bifacial solar cell of claim 1, wherein the number of the front side sub-grids is 150-128 sub-grids, and the number of the back side sub-grids is 150-180 sub-grids.
10. The large-size bifacial solar cell of claim 1, wherein the silicon substrate has a side length of at least 166 mm.
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| CN202120663269.3U CN215220732U (en) | 2021-03-31 | 2021-03-31 | Large-size double-sided solar cell |
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| CN202120663269.3U CN215220732U (en) | 2021-03-31 | 2021-03-31 | Large-size double-sided solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388637A (en) * | 2022-03-23 | 2022-04-22 | 中国华能集团清洁能源技术研究院有限公司 | Photovoltaic cell, manufacturing method thereof and laminated tile assembly |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388637A (en) * | 2022-03-23 | 2022-04-22 | 中国华能集团清洁能源技术研究院有限公司 | Photovoltaic cell, manufacturing method thereof and laminated tile assembly |
| WO2023178847A1 (en) * | 2022-03-23 | 2023-09-28 | 中国华能集团清洁能源技术研究院有限公司 | Photovoltaic cell, manufacturing method therefor, and shingled assembly |
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