CN215219421U

CN215219421U - Dual-waveband illumination system and maskless direct-writing photoetching equipment with same

Info

Publication number: CN215219421U
Application number: CN202121756743.3U
Authority: CN
Inventors: 戚蓉蓉; 杨宇航; 李鹏飞
Original assignee: Hefei Xinqi Microelectronics Equipment Co ltd
Current assignee: Hefei Xinqi Microelectronics Equipment Co ltd
Priority date: 2021-07-28
Filing date: 2021-07-28
Publication date: 2021-12-17
Anticipated expiration: 2031-07-28

Abstract

The utility model discloses a dual-band lighting system and have its maskless direct writing lithography apparatus, dual-band lighting system includes first light source, first optical wand, second light source, second optical wand, first lens group, second lens group, diaphragm, coupling lens, third lens group, digital micromirror device that are applicable to coupling light, the light that coupling lens coupling first light source and second light source sent; the third lens group is arranged on the light transmission path of the coupling lens, and the digital micromirror device is arranged on one side of the third lens group; and a diaphragm is arranged between the first lens group and the coupling lens. Like this, send light through being equipped with first light source and second light source to carry out the transmission after the coupling on coupling lens, make the proportion of carrying out two kinds of light of coupling can adjust, reduce the design degree of difficulty that dual-band lighting system matches the imaging system, promote dual-band lighting system's market competition and dual-band lighting system's technology coverage when carrying out production more extensive.

Description

Dual-waveband illumination system and maskless direct-writing photoetching equipment with same

Technical Field

The utility model belongs to the technical field of the lithography lighting technique and specifically relates to a two waveband lighting system and have its maskless direct writing lithography apparatus are related to.

Background

In the prior art, the illumination system is an important component of the exposure engine in a direct-write lithographic apparatus. The key indexes of the exposure engine such as wavelength, energy, uniformity, divergence angle and the like are determined, and the exposure effect and the photoetching production efficiency are directly influenced.

An illumination system is usually arranged in the direct-write lithography equipment for carrying out exposure design production so as to realize pattern transfer, and the exposure light source in most of the current equipment is usually an LED light source with the wave peak of 360nm-410nm or an LD light source with the wave peak of 370nm-375nm and 400nm-405 nm. Although the LED light source has a wide wave band, various aberrations in the imaging system cannot be well corrected due to a large divergence angle of the LED light source, the photoetching effect is influenced, the focal depth of the imaging system can be reduced, and the yield of photoetching products is influenced. While the divergence angle of the LD light source is relatively small, the process coverage is relatively incomplete because the wave band is single.

On the premise that the design of an illumination system ensures that the waveband range can cover different process requirements, how to reduce the numerical aperture of an emergent beam, simplify the structure, reduce the matching design difficulty of an imaging system, meet the process coverage and improve the photoetching effect is a technical problem to be solved urgently in the field of direct-writing photoetching equipment at present.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model aims at providing a two band lighting system of maskless direct writing lithography apparatus, two band lighting system have simple structure, match the imaging system design degree of difficulty lower, the wider advantage of technology coverage.

According to the utility model discloses maskless direct writing lithography apparatus's dual band lighting system, include: the device comprises a first light source, a first optical rod, a second light source, a second optical rod, a first lens group, a second lens group, a diaphragm, a coupling lens suitable for coupling light, a third lens group and a digital micromirror device; the first light bar is arranged on a light transmission path of the first light source and is used for carrying out total reflection for multiple times to form a uniform illumination light beam; the second optical rod is arranged on a light transmission path of the second light source, the second optical rod is a conical optical rod, the area of the end face, facing the second light source, of the second optical rod is smaller than the area of the end face, away from the second light source, of the second optical rod, and the second optical rod is used for reducing the numerical aperture of a light beam of the second light source and forming a uniform illumination light beam; the first lens group is arranged on a light transmission path of the first light source and is arranged on one side of the first light bar, which is far away from the first light source; the second lens group is arranged on a light transmission path of the second light source and is arranged on one side of the second light bar, which is far away from the second light source, and the optical axis of the first lens group is vertical to that of the second lens group; the coupling lens couples the light emitted by the first light source and the light emitted by the second light source to a third lens group; the third lens group is arranged on a light transmission path of the coupling lens and is suitable for transmitting light which is coupled by the first light source and the second light source through the coupling lens; the first lens group, the second lens group and the third lens group are suitable for shaping light beams to obtain emergent light with a smaller divergence angle so as to converge on the digital micromirror device, the digital micromirror device is arranged on one side of the third lens group, and the digital lens device is arranged on one side of the third lens group, which is deviated from the coupling lens; and a diaphragm is arranged between the second lens group and the coupling lens and is suitable for adjusting the numerical aperture of light rays emitted by the second light source, so that the proportion of output light beams of the first light source and the second light source is adjusted.

In some embodiments, the first lens group includes a plurality of lens segments and includes at least a first lens segment and a second lens segment, the first and second lens segments being spaced apart in an optical axis direction of the first light source.

In some embodiments, the first lens optic is a plano-convex lens and the second lens optic is a biconvex lens.

In some embodiments, the first lens group includes a first lens, a second lens and a third lens, the first lens, the second lens and the third lens are spaced apart along the optical axis of the first light source, the first lens group includes three lenses and mainly functions to collimate the light homogenized by the light bar, and preferably, the first lens is a plano-convex lens; the second lens is a meniscus positive lens; the third lens is a plano-convex lens.

In some embodiments, the second lens group comprises a plurality of lens segments and at least a fourth lens segment, a fifth lens segment and a sixth lens segment, the second lens group having a lens composition that is the same as the lens composition of the first lens group.

In some embodiments, the third lens group includes a plurality of lens elements and includes at least a seventh lens element, an eighth lens element, and a ninth lens element, the seventh lens element, the eighth lens element, and the ninth lens element being disposed in order along an optical axis transmission path, the seventh lens element being a meniscus positive lens; the eighth lens is a meniscus positive lens; the ninth lens is a plano-convex lens. In some embodiments, the dual-band illumination system of the maskless direct writing lithography apparatus further includes a first protective glass and a second protective glass, the first protective glass is located between the first optical rod and the first lens group, and the second protective glass is located between the second optical rod and the second lens group, and the first protective glass and the second protective glass are the same in material and size.

According to the utility model discloses maskless direct writing lithography apparatus's dual-band lighting system sends light through being equipped with first light source and second light source to make it carry out the transmission after the coupling on coupling lens, make the light after the coupling have the performance of two kinds of light, thereby make the technology coverage of direct writing lithography apparatus wider, can compromise the technology demand of product, improve the product glossiness of preventing welding. Simultaneously, still be equipped with the diaphragm in dual-band lighting system for the proportion of carrying out two kinds of light of coupling can be adjusted, can effectively reduce the imaging system and match the design degree of difficulty, satisfies high imaging quality, high photoetching production efficiency requirement. And the dual-band illumination system has small size and high integration level, so that the applicability of the dual-band illumination system is higher, and the market competitiveness of the dual-band illumination system is improved.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic structural diagram of a dual-band illumination system according to embodiment 1 of the present invention;

fig. 2 is a schematic structural diagram of a dual-band illumination system according to embodiment 2 of the present invention;

fig. 3 is an incoherent illumination diagram of a dual-band illumination system according to embodiment 1 of the present invention;

fig. 4 is an incoherent illumination diagram of a dual-band illumination system according to embodiment 2 of the present invention.

Reference numerals:

a dual band illumination system 10 is provided,

a first light source 100, a first light bar 200, a second light source 300,

the second light bar 400 is provided with a second light bar,

first lens group 500, first lens optic 510, second lens optic 520, third lens optic 530,

a second lens group 600, a fourth lens block 610, a fifth lens block 620, a sixth lens block 630,

the coupling lens 700 is coupled to the lens body,

a third lens group 800, a seventh lens optic 810, an eighth lens optic 820, a ninth lens optic 830,

the digital micro-mirror device 900 is,

a first protective glass 101, a second protective glass 102, a diaphragm 103.

Detailed Description

Embodiments of the present invention are described in detail below, and the embodiments described with reference to the drawings are exemplary.

Described below with reference to fig. 1-4, a dual-band illumination system 10 of a maskless direct write lithography apparatus according to an embodiment of the present invention, includes: the light source comprises a first light source 100, a first light bar 200, a second light source 300, a second light bar 400, a first lens group 500, a second lens group 600, a diaphragm 103, a coupling lens 700 suitable for coupling light, a third lens group 800, a digital micromirror device 900, a first protective glass 101 and a second protective glass 102.

Specifically, the first light source 100 is an LD light source, and the peak of the first light source 100 is 400nm to 405 nm; the first light bar 200 is a rectangular light bar, and the first light bar 200 is disposed on a light transmission path of the first light source 100; the second light source 300 is an LED light source with a wave peak of 360nm-365nm, the second light bar 400 is a conical light bar, the second light bar 400 is arranged on a light transmission path of the second light source 300, and the area of the end surface, facing the second light source 300, of the second light bar 400 is smaller than the area of the end surface, facing away from the second light source 300, of the second light bar 400; the first lens assembly 500 is disposed on a light transmission path of the first light source 100 and on a side of the first light bar 200 away from the first light source 100; the second lens assembly 600 is disposed on the light transmission path of the second light source 300 and on the side of the second light bar 400 away from the second light source 300, and the optical axis of the first lens assembly 500 is perpendicular to the optical axis of the second lens assembly 600; the coupling lens 700 is disposed at an intersection point of optical axes of the first light source 100 and the second light source 300, and the coupling lens 700 couples the light emitted from the first light source 100 and the light emitted from the second light source 300; the third lens assembly 800 is disposed on the light transmission path of the coupling lens 700, and the third lens assembly 800 is adapted to transmit the light coupled by the first light source 100 and the second light source 300; the digital micromirror device 900 is disposed on one side of the third lens group 800, and the digital lens device is disposed on one side of the third lens group 800 away from the coupling lens 700; a diaphragm 103 is disposed between the first lens assembly 500 and the coupling lens 700, and the diaphragm 103 is adapted to adjust an aperture value of light emitted from the first light source 100, so as to adjust a ratio of output light beams of the first light source 100 and the second light source 300.

It is understood that the first light source 100 is adapted to emit light having a peak of 400nm-405nm for providing high power exposure energy; the second light source 300 is used for emitting light with wave peak of 360nm-365nm, and is used for improving the glossiness of the anti-welding product and meeting the process coverage requirement; the light of the two light sources is coupled at the coupling lens 700 to form light having two peaks, and the coupling lens 700 can arrange and combine the light and then extend the light along a desired direction, so as to transmit the light to the dmd 900 to implement pattern transfer through projection of an exposure engine.

Meanwhile, the first light bar 200 is a rectangular light bar, and in a specific embodiment, the first light bar 200 enables the light emitted by the first light source 100 to be totally reflected multiple times to form a uniform illumination beam. In this way, the first light bar 200 may be a rectangular quartz bar or a rectangular quartz tube. Furthermore, the second light rod 400 is a tapered light rod, and the area of the end surface facing the second light source 300 is smaller than the area of the end surface of the second light rod 400 departing from the second light source 300, so that the light emitted by the second light source 300 can be totally reflected in the second light rod 400 to form a uniform illumination beam, and the divergence angle of the light is reduced. Therefore, the number of lenses of the second lens assembly 600 corresponding to the second light source 300 can be reduced, so that the structure of the dual-band illumination system 10 is more compact, and the integration level is improved. The second light rod 400 may be a tapered quartz rod or a tapered quartz tube.

In addition, it should be noted that the wave peak of the light emitted by the first light source 100 is 400nm to 405nm, the divergence angle is small, and the energy of the light source is stable, so that the imaging design of the first light source 100 is simpler, and the wave peak of the light emitted by the second light source 300 is 360nm to 365nm, which can improve the glossiness of the solder resist product and meet the process requirements of the product.

Moreover, the diaphragm 103 is further arranged in the dual-band illumination system 10, and the size of the diaphragm 103 is adjusted to reduce the numerical aperture of the illumination light spot of the second light source 300 on the digital micromirror, so that the matching design difficulty of the imaging system can be effectively reduced, and the requirements of high imaging quality and high photoetching production efficiency are met.

In some embodiments, dual-band illumination system 10 of maskless direct write lithography apparatus may further include a first protective glass 101 and a second protective glass 102, the first protective glass 101 being located between first optical rod 200 and first lens group 500, the second protective glass 102 being located between second optical rod 400 and second lens group 600. In some embodiments, the first protective glass 101 and the second protective glass 102 are the same in material and size. Thus, not only the production design of the first protective glass 101 and the second protective glass 102 can be simplified, but also the production cost of the first protective glass 101 and the second protective glass 102 can be reduced, so that the market competitiveness of the dual-band illumination system 10 is improved.

In an embodiment of the present application, the third lens group 800 includes a plurality of lens elements and includes at least a seventh lens element 810, an eighth lens element 820 and a ninth lens element 830, and the seventh lens element 810, the eighth lens element 820 and the ninth lens element 830 are sequentially disposed along the optical axis transmission path. The seventh lens element 810 is a positive meniscus lens; an eighth lens optic 820 that is plano-convex; the ninth lens optics 830 is a plano-convex lens. It is understood that the third lens assembly 800 is adapted to transmit light to the dmd 900, and during the transmission of light, a plurality of lens sheets disposed inside the third lens assembly 800 magnify the light to form an illumination spot having a certain numerical aperture, size and uniformity on the dmd 900.

The present invention exemplifies two embodiments, and the lens composition of each portion is different except the first lens assembly 500 and the second lens assembly 600 due to the design principle of the dual-band illumination system 10, and other components are basically the same, so the lens types and the design methods included in the first lens assembly 500 and the second lens assembly 600 will be described in detail below.

Specifically; in embodiment 1, the first lens assembly 500 includes a first lens element 510, a second lens element 520, and a third lens element 530, the first lens element 510, the second lens element 520, and the third lens element 530 are disposed at intervals along an optical axis of the first light source 100, the first lens element 510 is disposed close to the first light source 100, the second lens element 520 is disposed at one side of the first lens element 510 and disposed away from the first light source 100, the third lens element 530 is disposed at one side of the second lens element 520 and disposed away from the first light source 100, the first lens assembly 500 is adapted to collimate the light beam emitted by the first light source 100, in embodiment 1, the first lens element 510 is a plano-convex lens, the second lens element 520 is a meniscus positive lens, and the third lens element 530 is a plano-convex lens. It is to be understood that the above-described arrangement of the first lens optics 510 to the third lens optics 530 is only a preferred embodiment in this embodiment,

in embodiment 1, second lens group 600 comprises a plurality of lens segments and comprises at least a fourth lens segment 610, a fifth lens segment 620 and a sixth lens segment 630, the segments of second lens group 600 being identical to the segments of first lens group 500. It can be understood that, in order to improve the production efficiency and reduce the production cost, the areas of the end surfaces of the first optical rod 200 and the second optical rod 400 on the sides departing from the light source may be the same, so that the object heights of the light rays transmitted by the first optical rod 200 and the second optical rod 400 are consistent, and thus the lenses of the first lens group 500 and the second lens group 600 are consistent by controlling the curvature radius, the thickness, and the like during the design.

In embodiment 2, since the numerical apertures of the light sources corresponding to first lens group 500 and second lens group 600 are different, the numerical aperture of LD light source 100 is smaller, and the number of lenses of first lens group 500 can be reduced. So that first lens group 500 and second lens group 600 can better correspond to conduct and adapt light. When designing the dual-band illumination system 10, multiple configurations are used to control different object heights and different magnifications, and curvatures of the first lens element 510 of the first lens assembly 500 and the fourth lens element 610 of the second lens assembly 600 are set to be follow-up optimized, so as to ensure consistency of the first lens element 510 and the fourth lens element 610; the curvatures and distances of second lens piece 520 of first lens group 500 and fifth lens piece 620 and sixth lens piece 630 of second lens group 600 are set as variables to be optimized in order to match different magnifications of LD illumination and LED illumination; all lens curvatures and distances of third lens group 800 are set to follow optimization in order that third lens group 800 can be shared by an LD illumination system and an LED illumination system. The design mode ensures that the LD lighting system and the LED lighting system have the same lens, and the LD system reduces one lens compared with the LED system, thereby effectively reducing the cost.

In example 2, first lens group 500 includes, but is not limited to, the following compositions: the first lens cell 510 is a plano-convex lens and the second lens cell 520 is a biconvex lens. It can be appreciated that, by using the dual-band illumination system 10 with multiple configurations, the number of lenses of the first lens assembly 500 is reduced, thereby achieving an effective cost reduction.

Second lens group 600 includes, but is not limited to, the following: the fourth lens block 610 is a plano-convex lens; the fifth lens element 620 is a biconvex lens; the sixth lens element 630 is a positive meniscus lens. Similar to the method for disposing the second lens assembly 600 in embodiment 1, the effect of the second lens assembly 600 in embodiment 2 can be inferred by those skilled in the art by reading embodiment 1, and details are not repeated herein.

It can be understood that, in the maskless direct writing lithography apparatus mentioned in this application, during the use process, due to the different number of lens pieces of the first lens group 500 and the different structural design of the lenses, the conjugate distance and uniformity of the illumination system are also different, and thus have a certain influence on the use performance of the product, as shown in fig. 3 and fig. 4, fig. 3 is a non-coherent illumination graph in which the first lens group 500 is three lens pieces, in the case of this embodiment, the lens pieces of the first lens group 500 and the lens pieces of the second lens are arranged in the same number, fig. 4 is a non-coherent illumination graph in which the first lens group 500 is two lens pieces, in the case of this embodiment, the number of lens pieces of the first lens group 500 is two and the number of lens pieces of the second lens group 600 is three.

According to the utility model discloses maskless direct writing lithography apparatus, maskless direct writing lithography apparatus is applicable to integrated circuit's manufacturing, and maskless direct writing lithography apparatus includes: a dual-band illumination system 10 of a maskless direct write lithography apparatus as shown above. Therefore, the first light source 100 and the second light source 300 are arranged to emit light rays and are coupled and transmitted on the coupling lens 700, the coupled light rays have the performance of two light rays, the process coverage of the direct writing photoetching equipment is wider, the process requirements of products can be met, and the glossiness of the anti-welding products is improved. Meanwhile, the diaphragm 710 is further arranged in the dual-band illumination system 10, so that the ratio of two coupled light rays can be adjusted, the matching design difficulty of the imaging system can be effectively reduced, and the requirements on high imaging quality and high photoetching production efficiency are met. And the dual-band illumination system 10 has a small size and high integration level, so that the applicability of the dual-band illumination system 10 is higher, the market competitiveness of the dual-band illumination system 10 is improved, and the process coverage of the dual-band illumination system 10 during production is wider.

Other configurations and operations of maskless direct write lithography apparatus according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. A dual band illumination system of a maskless direct write lithography apparatus, comprising:

the device comprises a first light source, a first optical rod, a second light source, a second optical rod, a first lens group, a second lens group, a diaphragm, a coupling lens suitable for coupling light, a third lens group and a digital micromirror device;

the first light bar is arranged on a light transmission path of the first light source and used for carrying out multiple total reflections on light emitted by the first light source to form a uniform illumination light beam;

the second optical rod is arranged on a light transmission path of the second light source, the area of the end face, facing the second light source, of the second optical rod is smaller than the area of the end face, facing away from the second light source, of the second optical rod, and the second optical rod is used for reducing the numerical aperture of a light beam of the second light source and forming a uniform illumination light beam;

the first lens group is arranged on a light transmission path of the first light source and is arranged on one side of the first light bar, which is far away from the first light source;

the second lens group is arranged on a light transmission path of the second light source and on one side of the second light bar far away from the second light source, and the optical axis of the first lens group is vertical to that of the second lens group;

the coupling lens couples the light emitted by the first light source and the light emitted by the second light source to a third lens group;

the third lens group is arranged on a light transmission path of the coupling lens and is suitable for transmitting light which is coupled by the first light source and the second light source through the coupling lens;

the first lens group, the second lens group and the third lens group are suitable for shaping light beams to obtain emergent light with a smaller divergence angle so as to converge the emergent light on the digital micromirror device, the digital micromirror device is arranged on one side of the third lens group, and the digital micromirror device is arranged on one side of the third lens group, which is deviated from the coupling lens;

and a diaphragm is arranged between the second lens group and the coupling lens and is suitable for adjusting the numerical aperture of light rays emitted by the second light source, so that the proportion of output light beams of the first light source and the second light source is adjusted.

2. The dual band illumination system of maskless direct write lithography apparatus of claim 1, wherein said first lens group comprises a plurality of lens segments and comprises at least a first lens segment and a second lens segment, said first and second lens segments being spaced apart along an optical axis of said first light source.

3. The dual band illumination system of maskless direct write lithography apparatus of claim 2, wherein said first lens piece is a plano-convex lens and said second lens piece is a biconvex lens.

4. The dual band illumination system of maskless direct write lithography apparatus of claim 1, wherein said first lens group comprises a plurality of lens segments and comprises at least a first lens segment, a second lens segment, and a third lens segment, said first lens segment, said second lens segment, and said third lens segment being spaced apart along an optical axis of said first light source.

5. The dual band illumination system of the maskless direct write lithography apparatus of claim 4, wherein said first lens piece is a plano-convex lens, said second lens piece is a meniscus positive lens, and said third lens piece is a plano-convex lens.

6. The dual band illumination system of maskless direct write lithography apparatus of claim 5, wherein said second lens group comprises a plurality of lens optics and at least a fourth lens optic, a fifth lens optic and a sixth lens optic, said optics of said second lens group and said optics of said first lens group all having the same radius of curvature, thickness, material.

7. The dual band illumination system of maskless direct write lithography apparatus of claim 1, wherein said third lens group comprises a plurality of lens optics and at least a seventh lens optic, an eighth lens optic and a ninth lens optic, said seventh lens optic, said eighth lens optic and said ninth lens optic being disposed in series along an optical axis transfer path.

8. The dual band illumination system of the maskless direct write lithography apparatus of claim 7, wherein said seventh lens optic is a positive meniscus lens, said eighth lens optic is a positive meniscus lens, and said ninth lens optic is a plano-convex lens.

9. The dual band illumination system of maskless direct write lithography apparatus of claim 1, further comprising a first protective glass and a second protective glass, said first protective glass being located between said first optical rod and said first lens group, said second protective glass being located between said second optical rod and said second lens group, said first protective glass and said second protective glass being the same in material and size.

10. A maskless direct write lithography apparatus adapted for production manufacturing of integrated circuits, comprising: the dual-band illumination system of the maskless direct write lithography apparatus of any of claims 1-9.