CN215209617U - Movable platform and chemical vapor deposition device - Google Patents

Abstract

The movable platform is applied to the chemical vapor deposition device and comprises an adjusting device and a deposition table, wherein the adjusting device is fixed at the top of a reaction chamber of the chemical vapor deposition device, the deposition table is connected to the adjusting device, and the adjusting device is used for adjusting the position of the deposition table in the reaction chamber. The movable platform utilizes the adjusting device to flexibly adjust the position of the deposition table in the reaction chamber of the chemical vapor deposition device so as to adapt to different growth characteristics of different film materials on the deposition table, and then films with better uniformity and higher quality can be deposited.

Description

Movable platform and chemical vapor deposition device

Technical Field

The application relates to the field of semiconductors, in particular to a movable platform and a chemical deposition vapor phase device.

Background

The film material is prepared by introducing two or more gaseous raw materials into a reaction chamber to cause the gaseous raw materials to chemically react on a heated substrate to deposit a solid film. The preparation of the thin film material usually adopts a chemical vapor deposition device, but the thin film deposited by the existing chemical vapor deposition device is often of low quality.

Disclosure of Invention

In view of this, the present application provides a movable platform and a chemical vapor deposition apparatus, which solve the problem that the quality of a film deposited by the conventional chemical vapor deposition apparatus is not high.

In order to achieve the above object, in a first aspect, the present application provides a movable platform applied to a chemical vapor deposition apparatus, including an adjusting device and a deposition table, wherein the adjusting device is fixed on the top of a reaction chamber of the chemical vapor deposition apparatus, the deposition table is connected to the adjusting device, and the adjusting device is used for adjusting the position of the deposition table in the reaction chamber.

The application provides a movable platform, this movable platform utilizes the regulation deposition table that adjusting device can be nimble position in chemical vapor deposition device's reacting chamber to adapt to different film material different growth characteristics on the deposition table, and then can deposit out the film that the thickness is even, the quality is higher.

Optionally, the adjusting device includes a fixing mechanism and a translation mechanism, the fixing mechanism is connected to the top of the reaction chamber, the translation mechanism is connected to the fixing mechanism, and the translation mechanism is used for driving the deposition table to move horizontally.

The lifting handle is arranged to facilitate the operator to manually adjust the lifting height of the lifting bottom plate by using the lifting handle.

Optionally, the translation mechanism includes a translation body, a translation handle, and a second driving member for connecting the translation handle and the translation body, and the second driving member penetrates through the top of the reaction chamber and is connected to the translation handle; the translation body is connected with the deposition table through a rotary connecting plate.

The arrangement of the translation handle can facilitate an operator to manually adjust the horizontal distance of the translation body by utilizing the translation handle.

Optionally, the second drive comprises a worm, a worm gear and a translation rack; one end of the worm is connected with the translation handle, and the other end of the worm is clamped with the translation rack through the worm wheel; the translation rack is installed at one end of the translation body corresponding to the worm.

The structure of the worm gear has the characteristics of large transmission ratio, compact structure and large bearing capacity, and the meshing action of the worm gear and the worm is continuous during transmission, so that the translation plate can be more stable in the horizontal moving process by adopting the structural design of the worm gear, the worm and the rack, and no large noise is generated.

Optionally, the adjusting device further includes an angle adjusting mechanism, one end of the angle adjusting mechanism is connected to the fixing mechanism, and the other end of the angle adjusting mechanism is connected to the deposition table so that the deposition table can move horizontally relative to the angle adjusting mechanism.

Optionally, the angle adjustment mechanism includes angle adjustment handle and with the third driving piece that angle adjustment handle is connected, the third driving piece runs through the top of reaction chamber, and is connected with angle adjustment handle.

The arrangement of the angle adjusting handle can facilitate an operator to manually adjust the height of the angle adjusting mechanism by using the angle adjusting handle so as to drive the deposition table to horizontally move relative to the angle adjusting mechanism.

Optionally, the third driving element includes a sliding bar, a lead screw, a nut and an angle adjusting plate;

the screw rod is sleeved on the sliding rod with the sliding key, the external thread of the screw rod is clamped with the internal thread of the nut, and the nut is fixedly connected with the angle adjusting plate;

the angle adjusting plate is provided with a sliding groove used for being connected with the deposition table, and the deposition table is clamped in the sliding groove through a follow-up shaft.

The screw rod is connected with the sliding rod through the sliding key, so that when the handle is adjusted by rotating the angle, the sliding rod can drive the screw rod to rotate together; and because the external thread of the screw rod is meshed with the internal thread of the nut, and the nut and the angle adjusting plate are relatively fixed, the nut can move up and down by the rotation of the screw rod, and the up and down movement of the nut drives the angle adjusting plate to move up and down. Therefore, after the angle of the angle adjusting mechanism is adjusted, when the lifting plate is lifted, the lifting process does not influence the angle of the adjusted angle adjusting mechanism.

Optionally, the fixing mechanism is a lifting mechanism, the lifting mechanism includes a lifting handle, a first driving member, a lifting bottom plate and a sliding wheel fixedly connected with the lifting bottom plate, one end of the first driving member is connected with the lifting bottom plate, and the other end of the first driving member penetrates through the top of the reaction chamber and is connected with the lifting handle;

and the translation mechanism is provided with a groove for clamping the sliding wheel.

Through the last movable pulley joint that sets up of elevating system the last recess of translation mechanism is favorable to improving the stability of translation mechanism in the translation process.

The second aspect of the present application provides a chemical vapor deposition apparatus, the apparatus includes a reaction precursor gas inlet system, a tail gas treatment system and a reaction chamber, the top of the reaction chamber is provided with a movable platform as described in any one of the first aspect.

Optionally, the reaction precursor gas inlet system includes at least two gas channels communicated with the reaction chamber, the gas channels are respectively provided with a mass flow controller, and the mass flow controller is used for controlling the mass of the reaction gas participating in the chemical vapor deposition and the rate of introducing the reaction gas.

Optionally, the reaction chamber includes at least two gas diffusion heating modules, and at least one gas outlet interface, where the gas inlet interface is used for communicating with the gas channel, and the gas outlet interface is used for communicating with the exhaust gas treatment system;

the gas diffusion heating module comprises at least one gas diffusion plate and a baffle plate; the baffle is arranged above the gas diffusion plate;

the gas diffusion plate comprises a heating module and a porous gas dispersion net, wherein the heating module is at least one of a bulb, a lamp tube and/or a heating coil, and the porous gas dispersion net contains transition metal elements required by preparation of a two-dimensional material.

It is understood that the beneficial effects of the second aspect can be referred to the related description of the first aspect, and are not described herein again.

Drawings

Fig. 1 is a schematic front view of a movable platform according to an embodiment of the present disclosure;

fig. 2 is a left side view schematic structural diagram of a movable platform according to an embodiment of the present application;

fig. 3 is a schematic right-view structural diagram of a movable platform according to an embodiment of the present application;

FIG. 4 is a schematic structural diagram of an angle adjustment mechanism in a movable platform according to an embodiment of the present disclosure;

FIG. 5 is a schematic structural diagram of a heating stage in a movable stage according to an embodiment of the present disclosure;

FIG. 6 is a schematic structural diagram of a growth substrate in a movable platen according to an embodiment of the present application;

fig. 7 is a schematic structural diagram of an air intake duct according to an embodiment of the present application;

fig. 8 is a schematic structural diagram of a chemical vapor deposition apparatus according to an embodiment of the present disclosure.

Description of reference numerals:

1-a lifting mechanism; 11-a lifting handle; 12-a first drive member;

13-lifting the bottom plate; 14-a sliding wheel; 2-a translation mechanism;

21-a translation handle; 22-a second drive member; 221-a worm;

222-a worm gear; 223-translating the rack; 23-a translational body;

24-a groove; 3-an angle adjustment mechanism; 31-an angle adjustment handle;

32-a third drive member; 321-a slide bar; 322-lead screw;

323-angle adjusting plate; 3231-chute; 4-a deposition station;

41-heating table; 411-a housing; 412-a heating assembly;

4121-a heating element; 4122-a holder; 4123-a connection terminal;

413-heat preservation felt; 42-a growth substrate; 5-rotating the connecting plate;

6-a follower shaft; 7-angle adjusting slide block; 8-a mass flow controller;

9-gas diffusion heating module; 91-a gas diffusion plate; 92-a baffle;

10-reaction precursor gas inlet system; 11-a tail gas treatment system; 111-a tail gas filtration unit;

112-a vacuum pump; 13-air inlet guide groove.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The film material is prepared by introducing two or more gaseous raw materials into a reaction chamber to cause the gaseous raw materials to chemically react on a heated substrate to deposit a solid film. The chemical vapor deposition apparatus is often used for preparing the thin film material, but in the existing chemical vapor deposition apparatus, since the position between the reaction gas entering the reaction chamber and the growth substrate is relatively fixed, however, different thin film materials have different growth characteristics when growing on the growth substrate, when the position between the reaction gas and the growth substrate is relatively fixed, the uniformity of the thin film growth (for example, the thickness of the thin film) is affected, and the quality of the deposited thin film is relatively poor.

In order to solve the problems, the application provides a movable platform, which utilizes the position of the adjusting deposition table in the reaction chamber of the chemical vapor deposition device, which can be flexibly adjusted by the adjusting device, so as to adapt to different growth characteristics of different film materials on the deposition table, and further deposit a film with better uniformity and higher quality.

Fig. 1 to 3 are a front view, a left side view and a right side view of a movable platform provided in an embodiment of the present invention, the movable platform is applied to a chemical vapor deposition apparatus, and includes a regulating device and a deposition table 4, the regulating device is fixed on the top of a reaction chamber of the chemical vapor deposition apparatus, the deposition table 4 is connected to the regulating device, and the regulating device is used for regulating the position of the deposition table 4 in the reaction chamber.

In a possible embodiment, the adjusting device comprises a fixing mechanism and a translation mechanism 2, wherein the fixing mechanism is connected to the top of the reaction chamber, and the translation mechanism 2 is connected to the fixing mechanism and is used for driving the deposition table to move horizontally.

Illustratively, the translation mechanism 2 comprises a translation body 23, a translation handle 21 and a second driving member 22 for connecting the translation handle 21 and the translation body 23, wherein the second driving member 22 penetrates through the top of the reaction chamber and is connected with the translation handle 21; the translation body 23 is connected to the deposition station 4 by means of a rotating connection plate 5.

The second drive 22 comprises a worm 221, a worm gear 222 and a translation rack 223; one end of the worm 221 is connected with the translation handle 21, and the other end is clamped with the translation rack 223 through the worm wheel 222; the translation rack 223 is installed at one end of the translation body 23 corresponding to the worm 221.

The fixing mechanism can be vertically moved by rotating the lifting handle 11 connected with the first driving part 12, and the translation handle 21 connected with the second driving part 22 is rotated, so that the second driving part 22 drives the deposition table 4 connected with the translation body 23 to realize left-right translation, and the contact time of the reaction gas in the reaction chamber is changed by changing the direction of the deposition table 4 in the reaction chamber, thereby reducing the side reaction before the reaction gas reaches the deposition table 4 for reaction.

Of course, the translation mechanism 2 may also be another component having a translation function, for example, a combined translation mechanism implemented by connecting a guide rail and the deposition table 4, which is not limited in this application.

In another possible embodiment, the adjusting device further comprises an angle adjusting mechanism 3, one end of the angle adjusting mechanism 3 is connected with the fixing mechanism, and the other end is connected with the deposition table 4 so as to enable the deposition table 4 to move horizontally relative to the angle adjusting mechanism 3.

Wherein, angle adjustment mechanism 3 includes angle adjustment handle 31 and the third driving piece 32 of being connected with angle adjustment handle 31, and third driving piece 32 runs through the top of reaction chamber, and is connected with angle adjustment handle 31.

Optionally, the third driving member 32 includes a sliding bar 321, a lead screw 322, a nut, and an angle adjusting plate 323; the screw rod 322 is sleeved on the sliding rod 321 with a sliding key, the external thread of the screw rod 322 is clamped with the internal thread of the nut, and the nut is fixedly connected with the angle adjusting plate 323;

the angle adjusting plate 323 is provided with a chute 3231 for connecting the deposition table 4, and the deposition table 4 is clamped in the chute 3231 by a follower shaft 6.

The handle connected with the third driving part 32 is rotated, the sliding rod 321 connected with the rotating handle is rotated, the screw rod 322 connected with the sliding rod 321 through a sliding key is also rotated, the screw rod 322 and the nut are clamped through threads, the nut is fixed on the angle adjusting plate 323, the screw rod 322 can rotate relative to the nut, the nut is driven to move axially on the screw rod 322, the angle adjusting plate 323 can also move axially along the screw rod 322, the angle adjusting plate 323 can drive the follow-up shaft 6 in the sliding groove 3231 to move axially along the screw rod 322, and due to the constraint of the sliding groove 3231, the middle of the deposition table 4 is connected to the fixing mechanism through the rotating connecting plate 5, so that the deposition table can generate angular deviation. Therefore, the angle adjusting structure 3 can adapt to different growth characteristics of different film materials on the deposition table 4, so that the controllability of chemical reaction of reaction gas on the deposition table 4 is improved, and the quality of the deposited film is further improved.

Optionally, in an embodiment of the present application, the fixing mechanism is a lifting mechanism 1, and the lifting mechanism 1 includes a lifting handle 11, a first driving member 12, a lifting bottom plate 13, and a sliding wheel 14 fixedly connected to the lifting bottom plate 13; one end of the first driving piece 12 is connected with the lifting bottom plate 13, and the other end penetrates through the top of the reaction chamber and is connected with the lifting handle 11; the translation mechanism 2 is provided with a groove 24 for clamping the sliding wheel 14.

Through setting up recess 24 on the movable pulley 14 joint translation mechanism 2 on elevating system 1, this kind of joint relation makes translation mechanism 2 can remove along the direction of recess 24 in the horizontal migration process, and then guarantees translation mechanism 2 stability in the translation process.

It should be understood that the connection relationship between the lifting mechanism 1 and the translation mechanism 2 is not limited to the above-mentioned clamping manner, and may be other components with fixed direction moving function, and this application does not limit the scope of the present invention.

In another embodiment of the present application, the movable platform includes a lifting mechanism 1, a translation mechanism 2, an angle adjusting mechanism 3, and a deposition table 4; the lifting mechanism 1 comprises a lifting bottom plate 13 and a sliding wheel 14 fixedly connected with the lifting bottom plate 13; the translation mechanism 2 comprises a translation body 23, and a groove for clamping the sliding wheel 14 is formed in the translation body 23; the deposition table 4 is rotationally connected with the translation body 23; one end of the angle adjusting mechanism 3 is fixedly connected with the lifting bottom plate 13, and the other end is connected with the deposition table 4 so that the deposition table 4 can horizontally move relative to the angle adjusting mechanism 3.

The lifting mechanism 1 further comprises a lifting handle 11 and a first driving member 12 connected with the lifting bottom plate 13, wherein the first driving member 12 is used for driving the lifting bottom plate 13 to vertically move through the lifting handle 11. First driving piece 12 is lead screw 322, and lifting handle 11 is installed to the one end of lead screw 322, and the other end and nut joint, nut fixed connection lifting bottom plate 13.

The sliding wheels 14 are provided to reduce the friction between the translation mechanism 2 and the lifting mechanism 1 as much as possible, and as shown in fig. 2, one sliding wheel 14 is provided at each of the left and right ends of the translation mechanism 2, and the two sliding wheels 14 are connected by a shaft, which is fixedly connected to the lifting base plate 13 of the lifting mechanism 1.

It should be understood that the sliding wheels 14 arranged on the lifting bottom plate 13 may be a set of two sliding wheels 14 connected to the lifting bottom plate 13 of the lifting mechanism 1 through a connecting rod, and then the two sliding wheels 14 are used for clamping the translation mechanism 2; a plurality of sets of two sliding wheels 14 may be connected to the lifting bottom plate 13 of the lifting mechanism 1 through a connecting rod, and the plurality of sets of sliding wheels 14 are used to clamp the translation mechanism 2. The number of sets and the connection relation of the required sliding wheels 14 can be adjusted according to actual needs, and the application does not limit the number of sets and the connection relation.

Referring to fig. 2, grooves for clamping the sliding wheels 14 are formed at the left and right ends (corresponding to the installation positions of the sliding wheels 14 in the lifting mechanism 1) of the translation mechanism 2, so that the translation mechanism 2 is connected with the lifting mechanism 1. When the lifting mechanism 1 moves vertically, the translation mechanism 2 can be driven to move vertically together.

The translation mechanism 2 further comprises a translation handle 21 and a second driving member 22 connected with the translation body 23, wherein the second driving member 22 is used for driving the translation body 23 to move horizontally through the translation handle 21. Wherein the second drive 22 comprises a worm 221, a worm gear 222 and a translation rack 223; one end of the worm 221 is connected with the translation handle 21, and the other end is clamped with the translation rack 223 through the worm wheel 222; the translation rack 223 is fixed to one end of the translation body 23 corresponding to the worm 221.

It will be understood that when the translation handle 21 is rotated, the translation handle 21 will rotate the worm 221 connected to the translation handle 21, the worm 221 will rotate the worm wheel 222, the worm wheel 222 will engage with the translation rack 223, and the rotation of the worm wheel 222 will make the translation rack 223 drive the translation body 23 to translate left and right (horizontally).

It should be noted that the translation rack 223 and the translation body 23 may be two independent devices, and are integrated in a fixed connection manner; the translation body 23 with the translation rack 223 can also be directly used, and can be flexibly adjusted according to actual needs, which is not limited in this application.

The angle adjusting mechanism 3 comprises an angle adjusting handle 31 and a third driving piece 32 connected with the angle adjusting handle 31; the third driving member 32 is used to change the vertical distance between the angle adjusting plate 323 and the lifting mechanism 1.

The third driving member 32 includes a sliding bar 321, a lead screw 322, a nut, and an angle adjusting plate 323; the screw rod 322 is sleeved on the sliding rod 321 with a sliding key, the external thread of the screw rod 322 is clamped with the internal thread of the nut, and the nut is fixedly connected with the angle adjusting plate 323; the angle adjusting plate 323 is provided with a slide groove 3231 for connecting the deposition table.

It should be understood that, after the screw rod 322 and the sliding rod 321 are connected by the sliding key, when the handle 31 is rotated to adjust the angle, the sliding rod 321 makes the sliding key drive the screw rod 322 to rotate together due to the rotation force, and then the nut moves up and down relative to the screw rod 322 due to the rotation of the screw rod 322 because the external thread of the screw rod 322 is engaged with the internal thread of the nut, and the up and down movement of the nut will drive the angle adjusting plate 323 to move up and down.

As will be understood, the screw 322 of the angle adjusting mechanism 3 is connected to the lifting bottom plate 13 of the lifting mechanism 1 through a fixing flange, so that the screw 322 can only rotate and does not move up and down compared with the lifting bottom plate 13.

The deposition table 4 comprises a heating table 41 and a growth substrate 42 fixedly connected with the heating table 41; among them, the growth substrate 42 is shown in fig. 6, and the heating stage 41 is used to heat the growth substrate 42. The heating table 41 is connected with the translation mechanism 2 through a rotating connecting plate 5; the heating stage 41 is engaged in the slide groove 3231 by the follower shaft 6 so that the heating stage 41 is connected to the angle adjusting plate 323.

For better adjusting the angle of the deposition table 4, the rotating connecting plate 5 may be disposed at the middle position of the translation mechanism 2 as much as possible, and one end of the heating table 41 is clamped 6 in the sliding groove 3231 of the angle adjusting plate 323 through the follower shaft, so that when the angle adjusting mechanism 3 moves upward, the follower shaft 6 moves in the sliding groove 3231 of the angle adjusting plate 323 toward the angle adjusting mechanism 3, and the angle of the heating table 41 changes; on the contrary, when the angle adjusting mechanism 3 moves downward, the follower shaft 6 moves in the slide groove 3231 of the angle adjusting plate 323 in the direction away from the angle adjusting mechanism 3, and the angle of the heating stage 41 changes. In conclusion, a movable platform capable of flexibly adjusting the deposition table can be formed by the lifting mechanism 1, the translation mechanism 2, the angle adjusting mechanism 3 and the deposition table 4.

In order to ensure that the deposition table 4 connected with the rotating connection plate 5 does not deviate, as shown in fig. 3, two angle adjusting sliders 7 are respectively connected to one side of the movable platform connected with the angle adjusting mechanism 3 through a connecting rod, and the two angle adjusting sliders 7 are respectively connected with corresponding adjusting plates to be slidably connected with a heating table 41 of the deposition table 4 similarly to the connection mode of the angle adjusting mechanism 3 and the deposition table 4.

Optionally, as shown in fig. 5, the heating stage includes a housing 411, a heating assembly 412 and a heat-insulating felt 413, wherein the silicon heat-insulating felt 413 is disposed between the housing 411 and the heating assembly 412;

since the siliceous heat preservation felt 413 has the functions of heat preservation and heat insulation, the heat preservation felt 413 in the embodiment of the present application may be the siliceous heat preservation felt 413, or may be other heat preservation materials having the same functions.

The heating assembly 412 includes a heating element 4121, a holder 4122 for supporting the heating element 4121, and a terminal 4123 for connecting to an external power source to heat the heating element 4121.

It will be appreciated that the use of the electrical heating element 4121 facilitates the rapid heating requirements of the heating assembly 412. The U-shaped electric heating element 4121 used in the embodiment of the present application may be an electric heating coil, or may be another heating device capable of achieving a heating condition, and may be adjusted according to actual needs, which is not limited in this application. Likewise, the shape (e.g., U-shape) and heating manner (e.g., electric heating) of the heating element 4121 can be adjusted according to actual needs, which is not limited in this application.

As shown in fig. 8, the movable platform provided in the present application can be applied to a chemical vapor deposition apparatus, which includes a reaction precursor inlet system 10, an exhaust gas treatment system 11, and a reaction chamber formed by the movable platform;

the reaction precursor gas inlet system 10 comprises at least two gas channels, the gas channels are respectively provided with a mass flow controller 8, and the two gas channels are respectively communicated with the reaction chamber. It will be appreciated that the mass flow controller 8 facilitates control of the amount of reactant gas involved in chemical vapor deposition and the rate at which the reactant gas is introduced. The arrangement of the gas channel can be adjusted and designed according to the type or the quantity of the reaction gas actually participating in the chemical vapor deposition, and the application does not limit any way.

The reaction chamber comprises an air inlet interface and at least one air outlet interface, wherein the air inlet interface is provided with at least two gas diffusion heating modules 9, the air inlet interface is used for being communicated with a gas channel, and the air outlet interface is used for being communicated with a tail gas treatment system 11.

It should be noted that the gas inlet interface of the reaction chamber corresponds to the gas channel included in the reaction precursor gas inlet system 10, so that the reaction gas and the precursor changed in the gas input process can enter the reaction chamber.

Optionally, the gas diffusion heating module 9 comprises at least one gas diffusion plate 91 and a baffle 92; the baffle plate is arranged above the gas diffusion plate 91; the gas diffusion plate 91 includes a heating module 9 which is at least one of a bulb, a lamp and/or a heating coil, and a porous gas dispersion net containing an excess metal element necessary for preparing a two-dimensional material.

The first driving member 12, the second driving member 22 and the third driving member 32 may penetrate the reaction chamber through corresponding flanges, respectively, so as to artificially adjust the angle of the deposition table 4 in the reaction chamber by the lifting handle 11, the translation handle 21 and the angle adjustment handle 31.

Of course, the movable platform and the chemical vapor deposition apparatus provided in the present application can realize the angle change of the deposition table 4 and the chemical vapor deposition process in an automated manner. For example, the manual rotation of the lifting handle 11, the translation handle 21 and the angle adjustment handle 31 may be changed to an automatic control or the like, which is not limited in this application.

The exhaust gas treatment system 11 comprises an exhaust gas filtering device 111 and a vacuum pump 112, wherein the vacuum pump 112 is used for driving the exhaust gas generated by the reaction chamber to be filtered by the exhaust gas filtering device and exhausted. It should be understood that the exhaust gas filtering device 111 may be externally connected with other devices to realize the recycling of the exhaust gas.

As shown in fig. 8, the chemical vapor deposition apparatus provided in the present application can be applied to a cold wall chemical vapor deposition reaction of transition metal chalcogen compounds such as tungsten disulfide, molybdenum disulfide, tungsten diselenide, and molybdenum diselenide. Wherein the first reaction gas may be a transition metal element-containing substance_，For example, molybdenum hexacarbonyl, etc.; the second reaction gas mayAs a sulfur or selenium containing vapor.

For example, assuming that the first reaction gas is a vaporized tungsten trioxide gas and the second reaction gas is sulfur vapor, when the chemical vapor deposition apparatus provided by the present application is used, the process is as follows: firstly, the two reaction gases are introduced by using a mass flow controller 8 according to a certain proportion, and the second reaction gas generates a vulcanization reaction through a sulfur vapor generator. The first reactant gas may be diverted to the mixing chamber, one path of which passes through the water vapor and then to the mixing chamber, such that the gas reaching the mixing chamber comprises the first reactant gas and the gas mixed with the water vapor.

Then, the mixed gas in the mixing chamber reaches the gas diffusion heating module 9 through a gas channel between the mixing chamber and the gas diffusion heating module 9, and the mixed gas is preheated by a heating assembly 412 in the gas diffusion heating module 9 to generate a first reaction precursor; similarly, the first reaction gas of the sulfidation reaction reaches the other gas diffusion heating module 9 through the gas passage between the sulfur vapor generator and the corresponding other gas diffusion heating module 9, and the second reaction precursor is generated by preheating the first reaction gas of the sulfidation reaction through the heating element 412 in the other gas diffusion heating module 9.

Finally, the first reaction precursor and the second reaction precursor pass through the heating stage 41 of the deposition stage 4, and when the temperature of the heating stage 41 reaches 500-800 ℃, the first reaction precursor and the second reaction precursor react to generate tungsten disulfide and sulfur dioxide, the tungsten disulfide is deposited on the growth substrate 42, and the sulfur dioxide gas is exhausted through the tail gas filtering device 111 under the driving of the vacuum pump 112.

It should be noted that the water vapor treatment is beneficial to increase the vapor concentration of the first reaction precursor and promote the reaction. The independent gas inlet channel arranged in the reaction precursor gas inlet system 10 can effectively control the occurrence of the side reaction of the two reaction gases before reaching the deposition table 4, fully improve the utilization rate of the reaction precursor, and simultaneously reduce the deposition of the sediment on the growth substrate 42 after the side reaction occurs.

It should be understood that the chemical vapor deposition apparatus provided in the present application is also applicable to, for example, the first reaction gas may also be a vaporized tungsten trioxide gas, the second reaction gas is elemental sulfur, and the third reaction gas is hydrogen, and the first reaction gas and the third reaction gas react to generate a chemical reaction of tungsten disulfide and water vapor at a preheating temperature of 500 to 800 ℃. The specific process of the reaction is similar to the process of the reaction in which the first reaction gas is the gasified tungsten trioxide gas and the second reaction gas is sulfur vapor, and details are not repeated here.

Optionally, in order to prevent the gas entering the reaction chamber from the gas diffusion heating module 9 from flowing toward the direction close to the exhaust gas treatment system 11, a gas inlet channel guide groove 13 may be added to the gas diffusion heating module 9, see fig. 7.

In conclusion, the present application provides a movable platform and a chemical vapor deposition apparatus, the movable platform can flexibly achieve the function of adjusting the angle of the deposition table 4 through the mutual cooperation of the lifting mechanism 1, the translation mechanism 2 and the angle adjusting mechanism 3, and the contact angle between the deposition table 4 and the reaction gas is different due to the different angles of the deposition table 4, so the thickness of the film obtained on the deposition table 4 is different. Therefore, the film with uniform thickness can be deposited by adjusting the angle of the deposition table 4, and the quality of the film is further improved.

By flexibly adjusting the movable platform, the thickness of a film deposited in a reaction chamber in the chemical vapor deposition device using the movable platform is more uniform, and the quality is higher. And the independent gas inlet channel is designed in the chemical vapor deposition device, so that the quality and the feeding rate of the reaction gas can be controlled conveniently, the side reaction before the reaction gas reaches the deposition table 4 can be effectively controlled, and the utilization rate of the reaction gas is improved.

In the description of the present application, it is to be understood that the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.

It should be understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items. As used in this specification and the appended claims, the term "if" may be interpreted depending on the context as "when. The terms "comprising," "including," "having," and variations thereof mean "including, but not limited to," unless expressly specified otherwise.

In addition, in the description of the present application, it is to be understood that the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the orientation or positional relationship indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and are not to be considered limiting of the present application.

In addition, in the present application, unless otherwise explicitly stated or limited, the terms "connected," "connected," and the like are to be interpreted broadly, such as mechanically, directly, indirectly through an intermediary, or through communication between two elements or interaction between two elements, unless otherwise explicitly stated or limited by the context, as will be understood by those of ordinary skill in the art.

Finally, it should be noted that: the above embodiments and drawings are only for illustrating the technical solutions of the present application and are not limited thereto; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims (11)

1. The movable platform is applied to a chemical vapor deposition device and is characterized by comprising an adjusting device and a deposition table, wherein the adjusting device is fixed at the top of a reaction chamber of the chemical vapor deposition device, the deposition table is connected onto the adjusting device, and the adjusting device is used for adjusting the position of the deposition table in the reaction chamber.

2. The movable platform of claim 1, wherein the adjusting device comprises a fixed mechanism and a translating mechanism, the fixed mechanism is connected to the top of the reaction chamber, the translating mechanism is connected to the fixed mechanism, and the translating mechanism is used for driving the deposition table to move horizontally.

3. The movable platform of claim 2, wherein the translation mechanism comprises a translation body, a translation handle, and a second driving member for connecting the translation handle and the translation body, the second driving member penetrating the top of the reaction chamber and being connected with the translation handle;

the translation body is connected with the deposition table through a rotary connecting plate.

4. The mobile platform of claim 3, wherein the second drive comprises a worm, a worm gear, and a translating rack;

one end of the worm is connected with the translation handle, and the other end of the worm is clamped with the translation rack through the worm wheel;

the translation rack is installed at one end of the translation body corresponding to the worm.

5. The movable platform of claim 2, wherein the adjustment device further comprises an angle adjustment mechanism having one end connected to the fixed mechanism and the other end connected to the deposition table for moving the deposition table horizontally relative to the angle adjustment mechanism.

6. The mobile platform of claim 5, wherein the angle adjustment mechanism comprises an angle adjustment handle and a third driving member connected to the angle adjustment handle, the third driving member extending through the top of the reaction chamber and being connected to the angle adjustment handle.

7. The mobile platform of claim 6, wherein the third drive member comprises a slide bar, a lead screw, a nut, and an angle adjustment plate;

the screw rod is sleeved on the sliding rod with the sliding key, the external thread of the screw rod is clamped with the internal thread of the nut, and the nut is fixedly connected with the angle adjusting plate;

the angle adjusting plate is provided with a sliding groove used for being connected with the deposition table, and the deposition table is clamped in the sliding groove through a follow-up shaft.

8. The movable platform as claimed in claim 2, wherein the fixed mechanism is a lifting mechanism, the lifting mechanism comprises a lifting handle, a first driving member, a lifting bottom plate and a sliding wheel fixedly connected with the lifting bottom plate, one end of the first driving member is connected with the lifting bottom plate, the other end of the first driving member penetrates through the top of the reaction chamber, and the lifting handle is connected with the first driving member;

and the translation mechanism is provided with a groove for clamping the sliding wheel.

9. A chemical vapor deposition apparatus, comprising a reaction precursor gas inlet system, an exhaust gas treatment system and a reaction chamber, wherein the movable platform according to any one of claims 1 to 8 is arranged on the top of the reaction chamber.

10. The apparatus of claim 9, wherein the reactive precursor gas inlet system comprises at least two gas channels communicated with the reaction chamber, and the gas channels are respectively provided with mass flow controllers for controlling the mass of the reactive gas participating in the chemical vapor deposition and the rate of introducing the reactive gas.

11. The apparatus of any of claims 9 or 10, wherein the reaction chamber comprises at least two gas diffusion heating module gas inlet ports for communicating with the gas channel and at least one gas outlet port for communicating with the exhaust gas treatment system;

the gas diffusion heating module comprises at least one gas diffusion plate and a baffle plate; the baffle is arranged above the gas diffusion plate;

the gas diffusion plate comprises a heating module and a porous gas dispersion net, wherein the heating module is at least one of a bulb, a lamp tube and/or a heating coil, and the porous gas dispersion net contains transition metal elements required by preparation of a two-dimensional material.

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