CN215117090U

CN215117090U - Backlight module and display device

Info

Publication number: CN215117090U
Application number: CN202121463017.2U
Authority: CN
Inventors: 刘肇楠
Original assignee: Beijing Xiaomi Mobile Software Co Ltd
Current assignee: Beijing Xiaomi Mobile Software Co Ltd
Priority date: 2021-06-29
Filing date: 2021-06-29
Publication date: 2021-12-10
Anticipated expiration: 2031-06-29

Abstract

The application discloses backlight unit and display device belongs to display device technical field. The backlight module comprises: the device comprises a surface light source, a quantum dot dielectric layer and a first reflecting film. The quantum dots in the quantum dot dielectric layer can be distributed in the transparent dielectric layer, so that the quantum dots are coated by the transparent dielectric layer, and the transparent dielectric layer can ensure that the quantum dots are not in contact with water and oxygen in the air. Therefore, the phenomenon that the quantum dots are contacted with water and oxygen to cause oxidation failure can be avoided. In addition, the first reflecting film is bonded to the side face of the quantum dot dielectric layer, so that the problem of light leakage of the backlight module can be avoided, and the problem of oxidation failure caused by contact of the quantum dots and water oxygen when the quantum dots at the edge are not effectively wrapped by the transparent dielectric layer can be avoided. Therefore, the light emitting surface of the backlight module can emit white light at each position, and when the backlight module is integrated in the display device, the display effect of the display device can be better.

Description

Backlight module and display device

Technical Field

The application relates to the technical field of display equipment, in particular to a backlight module and a display device.

Background

With the development of display technology, liquid crystal display devices are widely used in the display field. The liquid crystal display device generally includes: backlight module and liquid crystal display panel.

Wherein, backlight unit can include: a surface light source and an optical film. The surface light source in the backlight module is usually a monochromatic light source. For example, the surface light source is a blue light source. A quantum dot layer is formed on an optical film in the backlight module in a mode of depositing a quantum dot material or coating the quantum dot material. The quantum dot layer includes: red quantum dots and green quantum dots. When the blue light that backlight unit sent shines on the quantum dot layer, a part of blue light can arouse red quantum dot and green quantum dot to send red light and green light respectively to all directions, and another part of blue light can directly pass through the quantum dot layer. Therefore, the superposition of the red light, the green light and the blue light can obtain white light, so that the backlight module emits the white light.

However, when the quantum dot layer is formed by depositing or coating a quantum dot material, the quantum dots at the edge of the quantum dot layer are easily contacted with water and oxygen to be oxidized. The oxidized quantum dots cannot excite light rays with corresponding colors, so that white light cannot be emitted at the edge of the backlight module, and the display effect of the liquid crystal display device is poor.

SUMMERY OF THE UTILITY MODEL

The embodiment of the application provides a backlight module and a display device. Can solve the problem that the quantum dots at the edge of the quantum dot layer in the prior art are easy to contact with water and oxygen and are oxidized, the technical scheme is as follows:

in one aspect, a backlight module is provided, the backlight module comprising: the device comprises a surface light source, a quantum dot dielectric layer and a first reflecting film;

the light emitting surface of the surface light source faces the quantum dot dielectric layer;

the quantum dot dielectric layer comprises: the quantum dots are distributed in the transparent medium layer;

the first reflecting film is bonded with the side face of the quantum dot dielectric layer.

Optionally, the quantum dot dielectric layer is a sheet structure formed by curing a transparent anti-oxidation material mixed with the quantum dots.

Optionally, the transparent antioxidant material is a polycarbonate material, and the quantum dot dielectric layer is a sheet structure formed by an injection molding process.

Optionally, the quantum dot dielectric layer further includes: scattering particles distributed within the transparent dielectric layer.

Optionally, the thickness of the quantum dot dielectric layer ranges from 400 micrometers to 700 micrometers.

Optionally, the surface light source includes: the second reflection film is positioned on the substrate, and the plurality of light-emitting units are arranged in an array manner;

the orthographic projection of the second reflecting film on the substrate is staggered with the orthographic projection of the light-emitting unit on the substrate;

the backlight module further comprises: and the semi-transparent semi-reflecting film is positioned on one surface of the quantum dot dielectric layer, which is far away from the surface light source.

Optionally, the backlight module further includes: and the antireflection film is positioned on one surface of the quantum dot dielectric layer, which is close to the surface light source.

Optionally, the thickness of the antireflection film is one quarter of the wavelength of the light emitted by the surface light source.

Optionally, the quantum dot dielectric layer has a plurality of diffusion regions corresponding to the plurality of light emitting units one to one, and the quantum dot dielectric layer further includes: the diffusion microstructures are positioned in each diffusion region and positioned on one surface, close to the surface light source, of the transparent medium layer;

wherein, the orthographic projection of each diffusion region on the substrate covers the orthographic projection of the corresponding light-emitting unit on the substrate.

Optionally, the plurality of diffusion microstructures includes: a plurality of raised structures and/or a plurality of recessed structures.

Optionally, the quantum dot includes: red quantum dots and green quantum dots, and the light-emitting unit is a mini light-emitting diode for emitting blue light.

In another aspect, there is provided a display device including: the liquid crystal display device comprises a liquid crystal display panel and a backlight module, wherein the backlight module is the backlight module.

The beneficial effects brought by the technical scheme provided by the embodiment of the application at least comprise: the device comprises a surface light source, a quantum dot dielectric layer and a first reflecting film. The quantum dots in the quantum dot dielectric layer can be distributed in the transparent dielectric layer, so that the transparent dielectric layer can cover the quantum dots, and the transparent dielectric layer can ensure that the quantum dots are not in direct contact with water oxygen in the air. Therefore, the problem of oxidation failure caused by the contact of the quantum dots and water oxygen can be avoided through the transparent dielectric layer. In addition, the first reflecting film is bonded to the side face of the quantum dot dielectric layer, so that the problem of light leakage of the backlight module can be solved, and the problem of oxidation failure caused by contact of the quantum dots and water and oxygen when the quantum dots located near the edge of the quantum dot dielectric layer are not effectively wrapped by the transparent dielectric layer can be solved. Therefore, the light emitting surface of the backlight module can emit white light at each position, and when the backlight module is integrated in the display device, the display effect of the display device can be better.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a top view of a backlight module according to an embodiment of the present disclosure;

FIG. 2 is a cross-sectional view of the backlight assembly shown in FIG. 1 at A-A';

FIG. 3 is a light path diagram of the backlight module shown in FIG. 2 at B;

fig. 4 is a schematic structural diagram of another backlight module provided in the embodiment of the present application;

FIG. 5 is a light path diagram of the backlight module shown in FIG. 4 at C;

fig. 6 is a schematic structural diagram of another backlight module provided in the embodiment of the present application;

fig. 7 is a schematic structural diagram of another backlight module according to an embodiment of the present application.

With the above figures, there are shown specific embodiments of the present application, which will be described in more detail below. These drawings and written description are not intended to limit the scope of the inventive concepts in any manner, but rather to illustrate the inventive concepts to those skilled in the art by reference to specific embodiments.

Detailed Description

To make the objects, technical solutions and advantages of the present application more clear, embodiments of the present application will be described in further detail below with reference to the accompanying drawings.

Referring to fig. 1 and fig. 2, fig. 1 is a top view of a backlight module according to an embodiment of the present disclosure, and fig. 2 is a cross-sectional view of the backlight module shown in fig. 1 at a-a'. The backlight module 000 may include: a surface light source 100, a quantum dot dielectric layer 200, and a first reflection film 300.

The light emitting surface 101 of the surface light source 100 faces the quantum dot medium layer 200.

The quantum dot dielectric layer 200 may include: a transparent dielectric layer 201, and quantum dots 202 distributed in the transparent dielectric layer 201.

The first reflective film 300 may be adhered to the side of the quantum dot dielectric layer 200.

In the present application, when the light emitted from the surface light source 100 in the backlight module 000 is emitted to the quantum dot dielectric layer 200, the quantum dots 202 in the quantum dot dielectric layer 200 can excite a part of the light emitted from the surface light source 100 into light of other colors, and the light can be superimposed with another part of the light emitted from the surface light source 100, which is not excited by the quantum dots 202, to obtain white light, so that the backlight module 000 emits white light.

In the embodiment of the application, the quantum dots 202 are distributed in the transparent medium layer 201, so that the transparent medium layer 201 can coat the quantum dots 202, and the transparent medium layer 201 can ensure that the quantum dots 202 are not in direct contact with water and oxygen in the air. Therefore, the problem that the quantum dots 202 are oxidized and fail after contacting with water and oxygen can be avoided by the transparent medium layer 201.

In addition, as shown in fig. 3, fig. 3 is a light path diagram of the backlight module shown in fig. 2 at B. The first reflection film 300 bonded to the side surface of the quantum dot dielectric layer 200 can reflect light emitted from the side surface of the quantum dot dielectric layer 200 back to the quantum dot dielectric layer 200, so that the light emitted from the surface light source 100 can pass through the quantum dot dielectric layer 200 and is emitted from one side of the quantum dot layer 200 away from the surface light source 100, the problem of light leakage of the backlight module 000 is avoided, and the light emitting efficiency of the backlight module 000 is improved.

In addition, the quantum dots 202 near the edge of the quantum dot dielectric layer 200 can be protected by the first reflective film 300, so that the problem that the quantum dots 202 are in contact with water and oxygen to cause oxidation failure when the quantum dots 202 near the edge of the quantum dot dielectric layer 200 are not effectively wrapped by the transparent dielectric layer 201 is solved.

To sum up, the backlight module provided by the embodiment of the present application includes: the device comprises a surface light source, a quantum dot dielectric layer and a first reflecting film. The quantum dots in the quantum dot dielectric layer can be distributed in the transparent dielectric layer, so that the transparent dielectric layer can cover the quantum dots, and the transparent dielectric layer can ensure that the quantum dots are not in direct contact with water oxygen in the air. Therefore, the problem of oxidation failure caused by the contact of the quantum dots and water oxygen can be avoided through the transparent dielectric layer. In addition, the first reflecting film is bonded to the side face of the quantum dot dielectric layer, so that the problem of light leakage of the backlight module can be solved, and the problem of oxidation failure caused by contact of the quantum dots and water and oxygen when the quantum dots located near the edge of the quantum dot dielectric layer are not effectively wrapped by the transparent dielectric layer can be solved. Therefore, the light emitting surface of the backlight module can emit white light at each position, and when the backlight module is integrated in the display device, the display effect of the display device can be better.

For example, as shown in fig. 1 and 2, the first reflective film 300 may be formed on the side surface of the quantum dot dielectric layer 200 by plating. For example, the reflective material may be coated on the side of the quantum dot dielectric layer 200 to obtain the first reflective film 300. In the present application, the reflective material may be a material having a high reflectance, such as metallic silver or metallic aluminum.

It should be noted that, in order to ensure that the first reflective film 300 has good oxidation resistance, the reflective material may be mixed with the oxidation-resistant material to obtain a mixed material, and then the mixed material is disposed on the side surface of the quantum dot dielectric layer 200 in a film coating manner. Thus, the first reflective film 300 on the side of the quantum dot dielectric layer 200 has not only high reflectivity but also good oxidation resistance.

In the present application, as shown in fig. 2, the quantum dot dielectric layer 200 in the backlight module 000 is a sheet structure formed by curing a transparent anti-oxidation material mixed with quantum dots 202. In this case, since the quantum dots 202 are mixed in the transparent antioxidant material, the transparent dielectric layer 201 formed after the transparent antioxidant material is cured can cover the quantum dots 202. Thus, when the quantum dot dielectric layer 200 is formed by curing the transparent antioxidant material mixed with the quantum dots 202, not only can the light emitted by the surface light source 100 be ensured to pass through the quantum dot dielectric layer 200 to be emitted, but also the quantum dot dielectric layer 200 formed by curing the transparent antioxidant material can be ensured to have good antioxidant performance, the quantum dots 202 distributed in the quantum dot dielectric layer 200 can be protected, and the quantum dots are prevented from being contacted by water and oxygen in the air to cause the quantum dots to be oxidized and fail.

Optionally, the transparent antioxidant material used for forming the transparent dielectric layer 201 in the quantum dot dielectric layer 200 may be a transparent organic material, or may also be a transparent inorganic material. For example, when the transparent oxidation resistant material is an inorganic material, it may be silicon nitride, silicon oxide, silicon oxynitride, glass, or the like. When the transparent oxidation resistant material is an organic material, it may be a polycarbonate material.

In the present application, the quantum dot dielectric layer 200 may be a plate-shaped structure formed through an injection molding process. For example, the transparent antioxidant material in liquid state and the quantum dots 202 may be mixed and then introduced into a mold, and the mixture is cured to obtain the sheet-shaped quantum dot dielectric layer 200. In this case, since the quantum dot dielectric layer 200 may be formed through an injection molding process. Therefore, after the quantum dots 202 and the transparent antioxidant material are mixed and injection molded together, the transparent dielectric layer 201 can better wrap the quantum dots 202, so that the transparent dielectric layer 201 can more effectively protect the quantum dots 202.

It should be noted that, in the process of forming the quantum dot dielectric layer 200 by the injection molding process, the process may be performed in an environment containing only a protective gas (e.g., nitrogen), and the curing temperature needs to be strictly controlled. Therefore, the problem that the quantum dots 202 are in contact with water and oxygen to lose efficacy in the injection molding process can be avoided, and the problem that the quantum dots 202 lose efficacy in a high-temperature environment can also be avoided.

Optionally, the thickness of the quantum dot dielectric layer 200 may range from 400 microns to 700 microns. In this case, the thickness of the quantum dot dielectric layer 200 formed by curing is controlled to be in the range of 400 to 700 μm. Therefore, the quantum dot dielectric layer 200 can be ensured to be thicker, the quantum dots 202 distributed in the quantum dot dielectric layer can be well protected, and the quantum dots 202 are prevented from being in contact with water and oxygen and being oxidized to fail. In addition, the quantum dot dielectric layer 200 has a relatively large thickness, so that the first reflective film 300 can be conveniently adhered to the edge of the quantum dot dielectric layer 200, thereby protecting the quantum dots 202 of the quantum dot dielectric layer 200 at the edge.

In the embodiment of the present application, as shown in fig. 4, fig. 4 is a schematic structural diagram of another backlight module provided in the embodiment of the present application. The quantum dot dielectric layer 200 may further include: scattering particles 203 are distributed in the transparent dielectric layer 201. For example, in the process of forming the quantum dot dielectric layer 200, the scattering particles 203 and the quantum dots 202 may be simultaneously mixed into the transparent oxidation resistant material. In this way, after the transparent antioxidant material mixed with the scattering particles 203 and the quantum dots 202 is cured and formed, the quantum dots 202 and the scattering particles 203 are simultaneously distributed in the transparent dielectric layer 201 of the obtained quantum dot dielectric layer 200.

In this case, as shown in fig. 5, fig. 5 is a light path diagram of the backlight assembly shown in fig. 4 at C. After the surface light source 100 emits light to the quantum dot dielectric layer, the scattering particles 203 distributed in the transparent dielectric layer 201 can diffuse the incident light, so that the light can be emitted from all directions, and the light emitting range of the backlight module 000 can be ensured to be large. Thus, the scattering particles 203 do not need to be formed into a film separately and then placed in the backlight module 000, and the overall thickness of the backlight module 000 can be effectively reduced. When the backlight module 000 is integrated in a display device, the viewing angle of the display device can be ensured to be larger, and the thickness of the display device can be ensured to be thinner.

For example, the material of the scattering particles 203 may include: at least one of nanoparticles having a high refractive index such as titanium dioxide and barium sulfate. The mass of the scattering particles 203 in the quantum dot dielectric layer 200 accounts for 40-60% of the total mass of the quantum dot dielectric layer 200.

In the present application, when the quantum dot dielectric layer 200 is prepared by using an injection molding process, the liquid transparent antioxidant material, the quantum dots 202 and the scattering particles 203 are uniformly mixed and then introduced into a mold, and the mixture is cured to obtain the sheet-shaped quantum dot dielectric layer 200.

In the embodiment of the present application, the surface light source 100 in the backlight module 000 may include: a substrate 102, and a second reflective film 103 and a plurality of light emitting units 104 arranged in an array on the substrate 102. The orthographic projection of the second reflective film 103 on the substrate 102 is shifted from the orthographic projection of the light emitting unit 104 on the substrate 102. For example, the plurality of light emitting units 104 are distributed in an array on the substrate 102 of the surface light source 100, and a surface of the light emitting unit 104 away from the substrate 102 is the light emitting surface 101 of the surface light source 100. Most of the light emitted from the light emitting unit 104 can be directly emitted to the quantum dot medium layer 200, and a small part of the light can be reflected by the second reflective film 103 and then emitted to the quantum dot medium layer 200. It should be noted that when the plurality of light emitting units 104 are arranged in an array on the substrate 102, the light emitting surface 101 of the surface light source 100 can emit uniform light.

In this application, the backlight module 000 may further include: and the semi-transparent and semi-reflective film 400 is positioned on one surface of the quantum dot dielectric layer 200, which is far away from the surface light source 100. After the light emitted by the surface light source 100 passes through the quantum dot dielectric layer 200, a part of the light can pass through the transflective film 400 and then exit; another part of the light may be reflected by the transflective film 400 back to the quantum dot medium layer 200, and may reenter the quantum dot medium layer 200 under the reflection action of the second reflective film 103 after passing through the quantum dot medium layer 200.

In this case, the half-transparent film 400 and the second reflective film 103 located at both sides of the quantum dot dielectric layer 200 allow light emitted from the light emitting unit 104 of the surface light source 100 to be reflected between the half-transparent film 400 and the second reflective film 103 for a plurality of times and then to be emitted from the half-transparent film 400 away from the quantum dot dielectric layer 200. In this process, the light incident into the quantum dot dielectric layer 200 can be excited by the quantum dots 202 for multiple times, thereby improving the light excitation efficiency of the quantum dots 202. In addition, the light rays emitted into the quantum dot dielectric layer 200 can be scattered for multiple times by the scattering particles 203, so that the light emitting range of the backlight module 000 is further improved.

Illustratively, the transflective film 400 may be formed on a surface of the quantum dot dielectric layer 200 away from the surface light source 100 by plating. For example, the semitransparent and semi-reflective film 400 may be obtained by coating the surface of the quantum dot dielectric layer 200 away from the surface light source 100 with an oxidation-resistant semitransparent and semi-reflective material. Thus, the semi-transparent and semi-reflective film 400 can also protect the quantum dots 202 positioned near the edge of one surface of the quantum dot dielectric layer far away from the surface light source 100, and avoid the problem that the quantum dots 202 are in contact with water and oxygen to cause oxidation failure when the quantum dots 202 positioned near the edge of one surface of the quantum dot dielectric layer far away from the surface light source 100 are not effectively wrapped by the transparent dielectric layer 201.

Optionally, the backlight module 000 may further include: and the antireflection film 500 is positioned on one surface of the quantum dot dielectric layer 200 close to the surface light source 100. The antireflection film 500 is a film that reduces reflected light and increases transmitted light by using the principle of light interference. Therefore, when the light emitted from the surface light source 100 reaches the antireflection film 500, the transmittance of the light can be increased through the antireflection film 500, that is, more light can reach the quantum dot dielectric layer 200, and the light emitting efficiency of the surface light source 100 can be effectively improved.

For example, the thickness of the antireflection film 500 may be a quarter of the wavelength of the light emitted from the surface light source 100. Thus, the optical path difference between the first light reflected by the surface light source 100 with the reflection reducing coating 500 near the surface light source 100 and the second light reflected by the surface light source 100 with the reflection reducing coating 500 away from the surface light source 100 is: the light emitted from the surface light source 100 has a wavelength of one half. Thus, the first light and the second light destructively interfere with each other, so that the light emitted from the surface light source 100 can completely pass through the anti-reflection film 500 and is not reflected by the anti-reflection film 500.

For example, the antireflection film 500 may be formed on one surface of the quantum dot dielectric layer 200 close to the surface light source 100 by plating. For example, a transparent material with oxidation resistance may be coated on a surface of the quantum dot dielectric layer 200 close to the surface light source 100, so as to obtain the antireflection film 500. Therefore, the anti-reflection film 500 can also protect the quantum dots 202 near the edge of the side of the quantum dot dielectric layer close to the surface light source 100, and the problem that the quantum dots 202 are oxidized and fail after contacting with water oxygen when the quantum dots 202 near the edge of the side of the quantum dot dielectric layer close to the surface light source 100 are not effectively wrapped by the transparent dielectric layer 201 is avoided.

In the embodiment of the present application, as shown in fig. 6, fig. 6 is a schematic structural diagram of another backlight module provided in the embodiment of the present application. The quantum dot dielectric layer 200 in the backlight module 000 may have a plurality of diffusion regions 204 corresponding to the plurality of light emitting units 104 distributed on the surface light source 100 one by one. The quantum dot dielectric layer 200 may further include: and the diffusion microstructures 205 are positioned in each diffusion region 204, and the diffusion microstructures 205 are positioned on one side of the transparent medium layer 201 close to the surface light source 100. Wherein, the orthographic projection of each diffusion region 204 on the substrate 102 in the surface light source 100 covers the orthographic projection of the corresponding light emitting unit 104 on the substrate 102.

For example, when the light emitting units 104 in the surface light source 100 emit light, and the light is emitted toward the quantum dot medium layer 200, the diffusion microstructures 205 in each diffusion region 204 corresponding to each light emitting unit 104 may diffuse the light, so that the light may be emitted into the quantum dot medium layer 200 from various directions. Therefore, the light emitting range of the backlight module 000 is further increased, and the light rays emitted into the quantum dot dielectric layer 200 can be more easily excited by the quantum dots 202, so that the light ray excitation efficiency of the quantum dots 202 can be increased.

Optionally, the plurality of diffusion microstructures 205 on one side of the transparent medium layer 201 close to the surface light source 100 may include: a plurality of raised structures and/or a plurality of recessed structures.

For example, the plurality of diffusion microstructures 205 on the side of the transparent medium layer 201 close to the surface light source 100 may all be protrusion structures, or may all be groove structures, or a part of non-protrusion structures is a groove structure, which is not limited in this embodiment of the present application.

In the present application, when the quantum dot dielectric layer 200 is prepared by using an injection molding process, a plurality of microstructures are disposed at the bottom of the mold before the quantum dot dielectric layer 200 is injection molded. Thus, after the quantum dot dielectric layer 200 is formed by injection molding in the mold, a plurality of diffusion microstructures 205 may be formed on one surface of the transparent dielectric layer 201 in the quantum dot dielectric layer 200.

In the embodiment of the present application, as shown in fig. 4, the quantum dots 202 in the quantum dot dielectric layer 200 may include: the red quantum dots 202a and the green quantum dots 202b, and the Light Emitting unit 104 in the surface Light source 100 is a mini-LED (mini-LED for short) for Emitting blue Light. In other possible implementations, the Light Emitting unit 104 in the surface Light source 100 may also be a Micro-Light Emitting Diode (Micro-LED) for Emitting blue Light.

Illustratively, the light emitting unit 104 in the surface light source 10 emits 445 nm blue light, which can generate 620 nm saturated red light under the excitation of the red quantum dots 202a, and 535 nm saturated green light under the excitation of the green quantum dots 202 b. The red light, the green light, and the blue light that is not excited by the quantum dots 202 are mixed together into white light.

In this case, since the red quantum dots 202a and the green quantum dots 202b among the quantum dots 202 can generate saturated red light and saturated green light for blue light excitation, respectively, the red light, the green light, and the blue light can be mixed together to generate white light. Thus, when the backlight module 000 is integrated in a display device, the color gamut of the display frame can be effectively increased.

Illustratively, the particle size of the green quantum dots 202b is 3 nm. Illustratively, the particle size of the red quantum dots 202a is 7 nanometers.

In the application, when the quantum dot dielectric layer 200 is prepared by adopting an injection molding process, green light quantum dots 202b with the length of 3 nanometers and red light quantum dots 202a with the length of 7 nanometers are mixed into the transparent antioxidant material according to the mass ratio of 1: 1.

Alternatively, the substrate 102 in the surface light source 100 has a plurality of driving circuits corresponding to the plurality of light emitting units 104 one to one. Each driving circuit may be electrically connected to a corresponding light emitting unit 104, and is used for driving the light emitting unit 104 to emit light.

Optionally, as shown in fig. 7, fig. 7 is a schematic structural diagram of another backlight module provided in the embodiment of the present application. The backlight module 000 may further include: and the first diffusion sheet 600, the first prism sheet 700, the second prism sheet 800 and the second diffusion sheet 900 are stacked on the side of the quantum dot medium layer 200 away from the surface light source 100. In the present application, after the light emitted from the surface light source 100 passes through the quantum dot medium layer 200, the light may be diffused by the first diffusion sheet 600. The intensity of the light emitted from the first diffusion sheet 600 can be increased by the first prism sheet 700 and the second prism sheet 800 to increase the overall brightness of the backlight module 000. The first prism sheet 700 and the second prism sheet 800 increase the brightness and reduce the range of the light emitting angle. Therefore, the light emitted from the second prism sheet 800 can be diffused by the second diffusion sheet 900, so as to ensure a wider light emitting range of the backlight module 000.

When the quantum dot dielectric layer 200 contains the scattering particles 203, the first diffusion sheet 600 does not need to be separately provided on the side of the quantum dot dielectric layer 200 away from the surface light source 100.

The embodiment of the present application further provides a display device, and the display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. The display device may include: liquid crystal display panel and backlight module. For example, the backlight module may be the backlight module shown in fig. 1, 4, 6 or 7.

In this application, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. The term "plurality" means two or more unless expressly limited otherwise.

The above description is intended to be exemplary only, and not to limit the present application, and any modifications, equivalents, improvements, etc. made within the spirit and scope of the present application are intended to be included therein.

Claims

1. A backlight module, comprising: the surface light source comprises a surface light source (100), a quantum dot dielectric layer (200) and a first reflecting film (300);

the light emitting surface (101) of the surface light source (100) faces the quantum dot medium layer (200);

the quantum dot dielectric layer (200) comprises: a transparent dielectric layer (201), and quantum dots (202) distributed within the transparent dielectric layer (201);

the first reflecting film (300) is bonded to the side surface of the quantum dot dielectric layer (200).

2. The backlight module as claimed in claim 1, wherein the quantum dot dielectric layer (200) is a sheet structure formed by curing a transparent oxidation resistant material mixed with the quantum dots (202).

3. The backlight module as claimed in claim 2, wherein the transparent oxidation resistant material is a polycarbonate material, and the quantum dot dielectric layer (200) is a sheet structure formed by an injection molding process.

4. The backlight module according to claim 1, wherein the quantum dot dielectric layer (200) further comprises: scattering particles (203) distributed within the transparent dielectric layer (201).

5. The backlight module according to claim 1, wherein the quantum dot dielectric layer (200) has a thickness in a range of 400 to 700 microns.

6. Backlight module according to any of claims 1 to 5, characterized in that the surface light source (100) comprises: a substrate (102), and a second reflection film (103) and a plurality of light emitting units (104) arranged in an array on the substrate (102);

the orthographic projection of the second reflecting film (103) on the substrate (102) is staggered with the orthographic projection of the light-emitting unit (104) on the substrate (102);

the backlight module further comprises: and the semi-transparent and semi-reflective film (400) is positioned on one surface of the quantum dot dielectric layer (200) far away from the surface light source (100).

7. The backlight module according to any one of claims 1 to 5, further comprising: and the antireflection film (500) is positioned on one surface of the quantum dot dielectric layer (200) close to the surface light source (100).

8. The backlight module according to claim 7, wherein the thickness of the antireflection film (500) is one quarter of the wavelength of the light emitted from the surface light source (100).

9. The backlight module according to claim 6, wherein the quantum dot dielectric layer (200) has a plurality of diffusion regions (204) corresponding to the plurality of light emitting cells (104) one to one, and the quantum dot dielectric layer (200) further comprises: a plurality of diffusion microstructures (205) are positioned in each diffusion region (204), and the diffusion microstructures (205) are positioned on one side of the transparent medium layer (201) close to the surface light source (100);

wherein an orthographic projection of each diffusion region (204) on the substrate (102) covers an orthographic projection of the corresponding light-emitting unit (104) on the substrate (102).

10. The backlight module according to claim 9, wherein the plurality of diffusing microstructures (205) comprises: a plurality of raised structures and/or a plurality of recessed structures.

11. The backlight module according to claim 6, wherein the quantum dots (202) comprise: red quantum dots (202a) and green quantum dots (202b), the light emitting unit (104) being a mini light emitting diode for emitting blue light.

12. A display device comprising a liquid crystal display panel and a backlight module according to any one of claims 1 to 11.