CN215073031U - Wiring power terminal device applied to induction heating - Google Patents
Wiring power terminal device applied to induction heating Download PDFInfo
- Publication number
- CN215073031U CN215073031U CN202023098922.0U CN202023098922U CN215073031U CN 215073031 U CN215073031 U CN 215073031U CN 202023098922 U CN202023098922 U CN 202023098922U CN 215073031 U CN215073031 U CN 215073031U
- Authority
- CN
- China
- Prior art keywords
- terminal
- clad plate
- ceramic copper
- power terminal
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Inverter Devices (AREA)
Abstract
The invention discloses a wiring power terminal device applied to induction heating, which comprises: a substrate; the first ceramic copper-clad plate and the second ceramic copper-clad plate are welded on the substrate, and the first IGBT module chip set and the second IGBT module chip set are welded on the first ceramic copper-clad plate and the second ceramic copper-clad plate and provided with a first current flowing area and a second current flowing area; the first ceramic copper-clad plate and the second ceramic copper-clad plate are parallel to each other and cover all wiring areas on the substrate together; the first current flowing area is connected with a first type power terminal and a second type power terminal; the second current flowing area is connected with a first power terminal; the second-type power terminal is arranged between the two first-type power terminals; and the two IGBT module chip sets are connected through aluminum wire bonding. According to the invention, the ceramic copper-clad plate and the IGBT module chip group are saved, the bonding wire directions of the aluminum wires are consistent, the bonding aluminum wires are arranged in parallel and orderly, and the yield and the reliability of the module are improved; the layout of the ceramic copper-clad plate is optimized, the proportion of the IGBT module chip set is reduced, and the cost is reduced.
Description
Technical Field
The utility model relates to a heating field especially relates to a be applied to induction heating's wiring power terminal device.
Background
Induction heating is one of the major processes in metal working today. The method is an ideal choice for replacing heating modes such as coal heating, oil heating, gas heating, electric furnace heating, electric oven heating and the like. And the induction heating does not need to heat the workpiece integrally, and can selectively heat the local part, thereby achieving the purpose of low power consumption and unobvious deformation of the workpiece.
With the continuous innovation of high-power connecting terminal devices in the field of induction heating application, the requirement on the reliability of technical parameters of a core control module is very high, and higher requirements are provided for the proportion and the design of a power module chip. The design of traditional high-power terminal device uses four ceramic copper-clad plates, and every ceramic copper-clad plate encapsulates a set of IGBT module chipset, all adopts 1 IGBT chip to add 2 diode chip ratios (the diode current is half of IGBT chip current), and its design makes the aluminium silk walk the line complicated and the direction inconsistent, has the branch when the aluminium silk bonding, causes easily and drops, and its reliability is relatively poor among the module application process.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides a high-power connecting terminal device with an aluminum wire bonding wire in a consistent trend and a regular arrangement.
In order to achieve the purpose, the invention adopts the following technical scheme:
a wire power termination device for use in induction heating, comprising:
a substrate;
the first ceramic copper-clad plate is welded on the substrate, and a first IGBT module chip set is welded on the first ceramic copper-clad plate and is provided with a first current flowing area;
the second ceramic copper-clad plate is welded on the substrate and is positioned on one side of the first ceramic copper-clad plate, and a second IGBT module chip set is welded on the second ceramic copper-clad plate and is provided with a second current flowing area;
the first ceramic copper-clad plate and the second ceramic copper-clad plate are parallel to each other and cover all wiring areas on the substrate together;
the first current flowing area is connected with a first type power terminal and a second type power terminal;
one first-type power terminal is connected to the second current flowing area;
the second-type power terminal is arranged between the two first-type power terminals;
the first IGBT module chip set and the second IGBT module chip set are connected through aluminum wire bonding.
Preferably, the first type power terminal includes:
the terminal comprises a terminal main body and two terminal pin parts, wherein the two terminal pin parts are respectively and vertically connected to the lower end of the terminal main body through corresponding first transition parts.
Preferably, the terminal body includes:
a top portion, said top portion having a screw hole;
two side portions perpendicular to the top portion and extending downward to form a protrusion below each side portion;
a second transition portion, each of the side portions being connected to the top portion through the second transition portion, respectively;
the width of the protrusion is equal to the width of the first transition and is less than the width of the second transition.
Preferably, the terminal pin portion includes:
the first bending structure is vertical to the corresponding side part and extends in an L shape in the horizontal direction, and the first transition part is connected to the outer side of the front end of the first bending structure;
a second bending structure perpendicular to the first bending portion and extending away from the terminal body in a vertical direction;
and the third bending structure is perpendicular to the second bending part, extends back to the terminal main body in the horizontal direction, and is provided with a through hole.
Preferably, each of the terminal pin portions further includes:
a third transition portion, through which the first bending structure is connected with the second bending portion; and the second bending structure is connected with the third bending part through the fourth transition part.
Preferably, the third transition cross-section is equal to the fourth transition cross-section;
the cross section of the third transition part is smaller than the bottom surface of the first bending mechanism on the side back to the terminal main body.
Preferably, the first IGBT module chip group includes one IGBT chip and one diode chip.
Preferably, the second IGBT module chip group includes one IGBT chip and one diode chip.
Preferably, a chip welding position is reserved on the ceramic copper-clad plate, and a high-temperature solder-resisting pattern is designed.
The technical scheme has the following advantages or beneficial effects: the ceramic copper-clad plate and the IGBT module chip set are saved, the bonding routing directions of the aluminum wires are consistent and compact, the bonding aluminum wires are arranged in parallel and orderly, and the branching is not easy to occur, so that the yield in the module manufacturing process and the reliability in the application process are improved; meanwhile, the layout structure of the ceramic copper-clad plate is optimized, the proportion of the IGBT module chip set is reduced, and the cost is reduced.
Drawings
FIG. 1 is a prior art wiring diagram of a wired power termination device;
fig. 2 is an internal wiring diagram of the partially wired power terminal device of the present invention;
FIG. 3 is an assembly effect diagram of the connection power terminal device of the present invention;
fig. 4 is a front view of the power terminal of the present invention;
fig. 5 is a left side view of the power terminal of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
The invention will be further explained with reference to the drawings and the specific embodiments.
As shown in fig. 1-3, the present invention provides a power terminal device for induction heating, comprising:
a substrate 21;
the first ceramic copper-clad plate 22 is welded on the substrate 21, the first IGBT module chip group 24 is welded on the first ceramic copper-clad plate 22, and a first current flowing area 27 is arranged on the first IGBT module chip group;
the second copper clad ceramic plate 23 is welded on the substrate 21 and is positioned on one side of the first copper clad ceramic plate 22, the second IGBT module chip set 25 is welded on the second copper clad ceramic plate 23, and a second current flowing area 28 is arranged;
the first ceramic copper-clad plate 22 and the second ceramic copper-clad plate 23 are parallel to each other and cover all the wiring areas on the substrate 21 together;
a first type power terminal 31 and a second type power terminal 32 are connected to the first current flowing region 27;
a first power terminal 31 is connected to the second current flowing region 28;
the second-type power terminal 32 is installed between the two first-type power terminals 31;
the first IGBT module chip group 24 and the second IGBT module chip group 25 are connected through bonding of aluminum wire ropes 26.
The traditional wiring power terminal device substrate 11 adopts 4 ceramic copper-clad plates 12 to cover all wiring areas, and each ceramic copper-clad plate 12 is welded with a group of IGBT modules 13, so that the design is adopted, when the assembly is carried out, the bonding of the aluminum wires 14 can not be carried out towards the same direction, the problem of the bifurcation of aluminum wire bonding wires is easily caused, and the reliability is poor in the module application process. In this embodiment, the novel wiring power terminal device uses two first ceramic copper-clad plates 22 and a second ceramic copper-clad plate 23 to cover all wiring areas of the substrate 21, and the aluminum wire 26 is bonded and routed in the same and tight direction, thereby solving the problem of bifurcation of the aluminum wire bonding wire.
In a preferred embodiment, as shown in fig. 4-5, the first type of power terminal 31 includes: a terminal main body 40, and two terminal lead portions 41, the two terminal lead portions 41 being vertically connected to a lower end of the terminal main body 40 by corresponding first transition portions 42, respectively.
Specifically, the terminal body 40 includes:
a top 401 having a screw hole 402;
two sides 403, each extending perpendicular to the top and downward to form a protrusion 404 below each side;
a second transition portion 405, each side portion 403 being connected to the top portion 401 by the second transition portion 405, respectively;
the width of the protrusion 404 is equal to the width of the first transition 42 and is less than the width of the second transition 405.
Specifically, the terminal pin portion 41 includes:
a first bending structure 410 which is perpendicular to the corresponding side portion 403 and extends in an L-shape in the horizontal direction, and a first transition portion 42 is connected to the outer side of the front end of the first bending structure 410;
a second bending structure 411 perpendicular to the first bending portion 410 and extending away from the terminal body 40 in the vertical direction;
the third bending structure 412 is perpendicular to the second bending portion 411, extends away from the terminal body 40 in the horizontal direction, and is provided with a through hole 413.
Specifically, the terminal pin portion 41 further includes:
a third transition portion 414, through which the first bending structure 410 is connected to the second bending portion 411;
a fourth transition portion 415, and the second bending structure 411 is connected to the third bending portion 412 through the fourth transition portion 415.
Specifically, the third transition 414 has a cross-section that is equal to the cross-section of the fourth transition 415;
the third transition portion 414 has a cross section smaller than a bottom surface of the first bending mechanism 410 on a side facing away from the terminal body 40.
The conventional wiring power terminal device is easy to cause difficulty in assembly due to the close distance between the first type power terminal 31 and the second type power terminal 32. In order to avoid such a situation, in the present embodiment, the side structure of the first-type power terminal 31 is improved, and the terminal lead portion 41 is changed to extend outward to the first ceramic copper clad laminate 22 and the second ceramic copper clad laminate 23, so that the moving direction of the aluminum wire bonding wire 26 is optimized, and the situation that the first-type power terminal 31 and the second-type power terminal 32 are too close to each other to cause difficulty in assembly is avoided.
In this embodiment, the first transition portion 42, the second transition portion 405, the third transition portion 414, and the fourth transition portion 415 are electrode bends.
In a preferred embodiment, the connection mode of the first-type power terminal 31 and the second-type power terminal 32 and the first ceramic copper-clad plate 22 and the second ceramic copper-clad plate 23 is vacuum welding. The vacuum welding on the electronic device generally adopts the mode of soft soldering, and has no corrosion effect on the electronic devices such as a power terminal, a ceramic copper-clad plate and the like.
In a preferred embodiment, the first IGBT module chipset 24 includes one IGBT chip and one diode chip.
In a preferred embodiment, the second IGBT module chip set 25 includes one IGBT chip and one diode chip.
Specifically, the input and output of the current of the power wiring terminal are controlled by the control switches of the IGBT chip and the diode chip. Generally, the IGBT chip and the diode chip with the same current are adopted, and compared with the IGBT module which adopts the IGBT chip and the diode chip (the current of the diode is half of that of the IGBT chip) with the ratio of 1:1, the IGBT module chip group with the ratio of 1:2, the reliability and the production convenience are higher.
In a preferred embodiment, chip bonding positions are reserved on the first ceramic copper-clad plate 22 and the second ceramic copper-clad plate 23, and high-temperature solder resist patterns are designed. Specifically, a chip welding position is reserved, and a high-temperature solder mask pattern is designed, so that the chip can be prevented from being deviated during welding.
In summary, compared with the prior art, the number of the ceramic copper-clad plates is optimized, the two first ceramic copper-clad plates 22 and the second ceramic copper-clad plates 23 are adopted to cover all the wiring areas of the substrate 21, the two first power terminals 31 and the second power terminal 32 are arranged, the problem of branching of the aluminum wire bonding line 26 in the module manufacturing process is avoided, the consistency and the manufacturing yield of the module performance are finally improved, and the module manufacturing cost is reduced.
Claims (10)
1. A wire power termination device for use in induction heating, comprising:
a substrate;
the first ceramic copper-clad plate is welded on the substrate, and a first IGBT module chip set is welded on the first ceramic copper-clad plate and is provided with a first current flowing area;
the second ceramic copper-clad plate is welded on the substrate and is positioned on one side of the first ceramic copper-clad plate, and a second IGBT module chip set is welded on the second ceramic copper-clad plate and is provided with a second current flowing area;
the first ceramic copper-clad plate and the second ceramic copper-clad plate are parallel to each other and cover all wiring areas on the substrate together;
the first current flowing area is connected with a first type power terminal and a second type power terminal;
one first-type power terminal is connected to the second current flowing area;
the second-type power terminal is arranged between the two first-type power terminals;
the first IGBT module chip set and the second IGBT module chip set are connected through aluminum wire bonding.
2. The wire power terminal device applied to induction heating according to claim 1, wherein said first kind of power terminal comprises:
the terminal comprises a terminal main body and two terminal pin parts, wherein the two terminal pin parts are respectively and vertically connected to the lower end of the terminal main body through corresponding first transition parts.
3. The terminal body of claim 2, wherein the terminal body comprises:
a top portion, said top portion having a screw hole;
two side portions perpendicular to the top portion and extending downward to form a protrusion below each side portion;
a second transition portion, each of the side portions being connected to the top portion through the second transition portion, respectively;
the width of the protrusion is equal to the width of the first transition and is less than the width of the second transition.
4. The wire power terminal device applied to induction heating according to claim 3, wherein each of said terminal pin portions comprises:
the first bending structure is vertical to the corresponding side part and extends in an L shape in the horizontal direction, and the first transition part is connected to the outer side of the front end of the first bending structure;
a second bending structure perpendicular to the first bending portion and extending away from the terminal body in a vertical direction;
and the third bending structure is perpendicular to the second bending part, extends back to the terminal main body in the horizontal direction, and is provided with a through hole.
5. The wire power terminal device applied to induction heating according to claim 4, wherein each of said terminal pin portions further comprises:
a third transition portion, through which the first bending structure is connected with the second bending portion;
and the second bending structure is connected with the third bending part through the fourth transition part.
6. The terminal device of claim 5, wherein the third transition cross-section is equal to the fourth transition cross-section;
the cross section of the third transition part is smaller than the bottom surface of the first bending mechanism on the side back to the terminal main body.
7. The wiring power terminal device applied to induction heating according to claim 1, wherein the first power terminal, the second power terminal and the ceramic copper-clad plate are connected by vacuum welding.
8. The terminal device of claim 1, wherein the first IGBT module chip set comprises an IGBT chip and a diode chip.
9. The terminal device of claim 1, wherein the second IGBT module chip set comprises an IGBT chip and a diode chip.
10. The device of claim 1, wherein a high temperature solder resist pattern is designed on the ceramic copper clad laminate in advance at a chip soldering position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023098922.0U CN215073031U (en) | 2020-12-21 | 2020-12-21 | Wiring power terminal device applied to induction heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202023098922.0U CN215073031U (en) | 2020-12-21 | 2020-12-21 | Wiring power terminal device applied to induction heating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215073031U true CN215073031U (en) | 2021-12-07 |
Family
ID=79215660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202023098922.0U Active CN215073031U (en) | 2020-12-21 | 2020-12-21 | Wiring power terminal device applied to induction heating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215073031U (en) |
-
2020
- 2020-12-21 CN CN202023098922.0U patent/CN215073031U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100552947C (en) | The electronic circuit device of power control system | |
| CN104170086B (en) | The manufacture method of semiconductor device and semiconductor device | |
| CN101399262B (en) | Power semiconductor arrangement and assembling method thereof | |
| JPS60194555A (en) | Power semiconductor module | |
| US7986034B2 (en) | Power semiconductor module and method for producing the same | |
| CN101527524A (en) | Power converter apparatus | |
| JP3941728B2 (en) | Power semiconductor device | |
| EP2099120B1 (en) | Power converter | |
| US10097103B2 (en) | Power conversion module with parallel current paths on both sides of a capacitor | |
| CN215073031U (en) | Wiring power terminal device applied to induction heating | |
| CN112701111A (en) | Three-level circuit silicon carbide power module | |
| CN202796921U (en) | Power module electrode terminal | |
| CN116613156A (en) | Packaging structure of silicon carbide power module | |
| CN115911012A (en) | IGBT module | |
| CN111863789B (en) | Low inductance power module | |
| CN205004327U (en) | 62mmIGBT module | |
| CN113113389A (en) | Power module with low near field radiation EMI noise | |
| CN208581397U (en) | Circuit board and charging pile | |
| CN112687632A (en) | Structural design of power module and implementation method thereof | |
| CN214411192U (en) | Low-cost high heat dissipation intelligent function module | |
| CN113035847A (en) | Low-inductance packaging structure and packaging method for power semiconductor module | |
| CN216958019U (en) | Power module with metal connecting frame | |
| CN219761439U (en) | Power enhancement module | |
| JP7308139B2 (en) | Power semiconductor module and power converter | |
| CN210725493U (en) | Prevent circuit board in pad stifled hole |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: A connecting power terminal device applied to induction heating Effective date of registration: 20230113 Granted publication date: 20211207 Pledgee: Hangzhou High-tech Financing Guarantee Co.,Ltd. Pledgor: Hangzhou Taixin Microelectronics Co.,Ltd. Registration number: Y2023330000152 |