CN215072188U - SiC/Si mixed three-phase three-level ANPC inverter topological structure - Google Patents

SiC/Si mixed three-phase three-level ANPC inverter topological structure Download PDF

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CN215072188U
CN215072188U CN202022940265.3U CN202022940265U CN215072188U CN 215072188 U CN215072188 U CN 215072188U CN 202022940265 U CN202022940265 U CN 202022940265U CN 215072188 U CN215072188 U CN 215072188U
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power tube
power
capacitor
potential point
phase
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张犁
娄修弢
诸葛慧子
史雯
雷峥子
谢子建
陶劲宇
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Hohai University HHU
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

The utility model discloses a three level ANPC dc-to-ac converter topological structure of SiC/Si mixed type three-phase belongs to power electronic technology field. The topological structure comprises a power frequency module and a high-frequency module; the power frequency module and the high-frequency module both comprise a plurality of power tubes, the power tubes in the power frequency module all adopt Si IGBTs, and the power tubes in the high-frequency module all adopt SiC MOSFETs. The performance advantage of the SiC device is utilized, and meanwhile, the effect of reducing the circuit cost is achieved.

Description

SiC/Si mixed three-phase three-level ANPC inverter topological structure
Technical Field
The utility model belongs to the technical field of power electronics, in particular to three level ANPC dc-to-ac converter topological structure of SiC/Si mixed type three-phase.
Background
In the prior art, the switching frequency of a traditional inverter based on a Si IGBT is generally lower than 20kHz, and the efficiency and the power density are difficult to further optimize. The SiC power device has the advantages of high temperature resistance, high pressure resistance, high switching frequency, low loss and the like, but if the SiC device is directly and completely used for replacement, the cost of the inverter can be greatly increased, and the wide application of the SiC device in the field of the inverter is limited.
Particularly for a three-phase three-level inverter, the number of switches is large, Si devices at different positions are selected to be replaced by SiC devices, switching loss is concentrated to SiC MOSFETs, Si IGBTs bear on-state loss, performance advantages of SiC power tubes can be fully played, efficiency and power density of the inverter are effectively improved, cost is reduced, and high cost performance is achieved.
SUMMERY OF THE UTILITY MODEL
In order to solve the not enough of above-mentioned background art, the utility model provides a three-level ANPC dc-to-ac converter topological structure of SiC/Si mixed type three-phase has four switch tubes to adopt SiC MOSFET in every phase, and all the other switch tubes adopt Si IGBT. The performance advantages of the SiC device are fully utilized, and meanwhile, the loss balance distribution of the SiC device and the whole inverter is realized.
In order to realize the technical purpose, the utility model discloses a following technical scheme does:
a topology structure of SiC/Si mixed three-phase three-level ANPC inverter comprises a DC power supply UdcDC voltage-dividing capacitor C1DC voltage-dividing capacitor C2Three-phase three-level ANPC inverter bridge arm A, bridge arm B, bridge arm C, output filter inductor, output filter capacitor, load resistor, and DC voltage-dividing capacitor C1Positive terminal and DC power supply UdcThe positive pole of the capacitor is connected, the formed node is a potential point P, and a direct current voltage-dividing capacitor C1Negative terminal of and DC voltage-dividing capacitor C2The positive terminal of the capacitor is connected, the formed node is a potential point O, and the direct current voltage-dividing capacitorC2Negative terminal of and DC power supply UdcThe negative electrodes are connected, and a node is a potential point N;
the bridge arm A comprises a power tube Sa1To Sa6Power tube Sa1Is connected to potential point P, power tube Sa1Source electrode and power tube Sa5Collector electrode and power tube Sa2Is connected to the drain of the power transistor Sa5Emitter and power tube Sa6Is connected with the potential point O, and a power tube Sa6Emitter and power tube Sa4Drain electrode of (1) and power tube Sa3Is connected to the source of the power transistor Sa4Is connected with a potential point N, a power tube Sa2Source electrode and power tube Sa3The node is a potential point A and is used as an output end of the phase A of the inverter.
The bridge arm B comprises a power tube Sb1To Sb6Power tube Sb1Is connected to potential point P, power tube Sb1Source electrode and power tube Sb5Collector electrode and power tube Sb2Is connected to the drain of the power transistor Sb5Emitter and power tube Sb6Is connected with the potential point O, and a power tube Sb6Emitter and power tube Sb4Drain electrode of (1) and power tube Sb3Is connected to the source of the power transistor Sb4Is connected with a potential point N, a power tube Sb2Source electrode and power tube Sb3The node is a potential point B and is used as an output end of the phase B of the inverter.
The bridge arm C comprises a power tube Sc1To Sc6Power tube Sc1Is connected to potential point P, power tube Sc1Source electrode and power tube Sc5Collector electrode and power tube Sc2Is connected to the drain of the power transistor Sc5Emitter and power tube Sc6Is connected with the potential point O, and a power tube Sc6Emitter and power tube Sc4Drain electrode of (1) and power tube Sc3Is connected to the source of the power transistor Sc4Is connected with a potential point N, a power tube Sc2Source electrode and power tube Sc3Is connected to the drain of (1), and the node is a potential point C as an inverseAnd a phase-C output end of the transformer.
The output filter inductor, the output filter capacitor and the load resistor comprise a filter inductor LafFilter inductor LbfFilter inductor LcfFilter capacitor CafFilter capacitor CbfFilter capacitor CcfLoad resistance RaLoad resistance RbLoad resistance RcPower tube Sa2Source electrode and power tube Sa3After being connected, the drain electrode of the capacitor passes through an output filter inductor LafAnd a filter capacitor CafIs connected to the positive terminal of the load resistor RaAnd output filter capacitor CafParallel power tubes Sb2Source electrode and power tube Sb3After being connected, the drain electrode of the capacitor passes through an output filter inductor LbfAnd a filter capacitor CbfIs connected to the positive terminal of the load resistor RbAnd output filter capacitor CbfParallel power tubes Sc2Source electrode and power tube Sc3After being connected, the drain electrode of the capacitor passes through an output filter inductor LcfAnd a filter capacitor CcfIs connected to the positive terminal of the load resistor RcAnd output filter capacitor CcfParallel connection, filter capacitor CafFilter capacitor CbfFilter capacitor CcfThe negative electrode end of the anode is connected, and the formed node is a potential point n.
Compared with the prior art, the beneficial effects of the utility model are that: the advantage of low switching loss of the SiC device under a high-frequency condition is utilized, the main switching loss in the loss of the power tube is concentrated to the SiC MOSFET, the Si IGBT bears the on-state loss, and the circuit cost is reduced while the performance advantage of the SiC device is utilized; the utility model discloses a three-phase structure can obtain higher output current and output, realizes high integrated level, high power level.
The technical solution of the present invention is further described in detail by the accompanying drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a topology structure diagram of a SiC/Si hybrid three-phase three-level ANPC inverter according to an embodiment of the present invention.
Detailed Description
The present invention will be further explained with reference to the drawings and examples.
As shown in FIG. 1, a SiC/Si hybrid three-phase three-level ANPC inverter topology structure comprises a DC power supply UdcDC voltage-dividing capacitor C1DC voltage-dividing capacitor C2Three-phase three-level ANPC inverter bridge arm A, bridge arm B, bridge arm C, output filter inductor, output filter capacitor, load resistor, and DC voltage-dividing capacitor C1Positive terminal and DC power supply UdcThe positive pole of the capacitor is connected, the formed node is a potential point P, and a direct current voltage-dividing capacitor C1Negative terminal of and DC voltage-dividing capacitor C2The positive terminal of the capacitor is connected, the formed node is a potential point O, and a direct current voltage-dividing capacitor C2Negative terminal of and DC power supply UdcThe negative electrode of (1) is connected, and the formed node is a potential point N;
wherein, three-phase three-level ANPC inverter bridge includes power frequency module and high frequency module, and power frequency module uses power tube Sa5And a power tube Sa6Power tube Sb5And a power tube Sb6Power tube Sc5And a power tube Sc6The components are Si IGBT, high frequency module and power tube Sa1Power tube Sa2Power tube Sa3Power tube Sa4And a power tube Sb1Power tube Sb2Power tube Sb3Power tube Sb4And a power tube Sc1Power tube Sc2Power tube Sc3Power tube Sc4The components are all SiC MOSFETs.
Wherein, three-phase three-level ANPC inverter bridge arm A includes power tube Sa1To Sa6Power tube Sa1Is connected to potential point P, power tube Sa1Source electrode and power tube Sa5Collector electrode and power tube Sa2Is connected to the drain of the power transistor Sa5Emitter and power tube Sa6Is connected with the potential point O, and a power tube Sa6Emitter and power tube Sa4Drain electrode of (1) and power tube Sa3Is connected to the source of the power transistor Sa4Is connected with a potential point N, a power tube Sa2Source electrode and power tube Sa3The node is a potential point A and is used as an output end of an A phase of the inverter;
wherein, the bridge arm B comprises a power tube Sb1To Sb6Power tube Sb1Is connected to potential point P, power tube Sb1Source electrode and power tube Sb5Collector electrode and power tube Sb2Is connected to the drain of the power transistor Sb5Emitter and power tube Sb6Is connected with the potential point O, and a power tube Sb6Emitter and power tube Sb4Drain electrode of (1) and power tube Sb3Is connected to the source of the power transistor Sb4Is connected with a potential point N, a power tube Sb2Source electrode and power tube Sb3The node is a potential point B and is used as the output end of the phase B of the inverter;
wherein, the bridge arm C comprises a power tube Sc1To Sc6Power tube Sc1Is connected to potential point P, power tube Sc1Source electrode and power tube Sc5Collector electrode and power tube Sc2Is connected to the drain of the power transistor Sc5Emitter and power tube Sc6Is connected with the potential point O, and a power tube Sc6Emitter and power tube Sc4Drain electrode of (1) and power tube Sc3Is connected to the source of the power transistor Sc4Is connected with a potential point N, a power tube Sc2Source electrode and power tube Sc3The node is a potential point C and is used as the output end of the phase C of the inverter.
Wherein, the output filter inductor, the output filter capacitor and the load resistor comprise a filter inductor LafFilter inductor LbfFilter inductor LcfFilter capacitor CafFilter capacitor CbfFilter capacitor CcfLoad resistance RaLoad resistance RbLoad resistance RcPower tube Sa2Source electrode and power tube Sa3After being connected, the drain electrode of the capacitor passes through an output filter inductor LafAnd a filter capacitor CafIs connected to the positive terminal of the load resistor RaAnd output filter capacitor CafParallel power tubes Sb2Source electrode and power tube Sb3After being connected, the drain electrode of the capacitor passes through an output filter inductor LbfAnd a filter capacitor CbfIs connected to the positive terminal of the load resistor RbAnd output filter capacitor CbfParallel power tubes Sc2Source electrode and power tube Sc3After being connected, the drain electrode of the capacitor passes through an output filter inductor LcfAnd a filter capacitor CcfIs connected to the positive terminal of the load resistor RcAnd output filter capacitor CcfParallel connection, filter capacitor CafFilter capacitor CbfFilter capacitor CcfThe negative electrode end of the anode is connected, and the formed node is a potential point n.
Wherein, the DC power supply UdcIs a 1000V DC source of Chroma company model 62150, and a DC voltage dividing capacitor C1DC voltage-dividing capacitor C2Is formed by connecting 4 CD294 aluminum electrolytic capacitors with the withstand voltage value of 450V and the capacitance value of 470 muF in parallel, and a filter inductor LafFilter inductor LbfFilter inductor Lcf1.4mH, and a filter capacitor CafFilter capacitor CbfFilter capacitor CcfBoth were 4.7. mu.F.
In FIG. 1, taking bridge arm A as an example, when power tube Sa1Power tube Sa2And a power tube Sa6Conducting, power tube Sa3Power tube Sa4Power tube Sa5When the inverter is turned off, the output level of the inverter is + E; when power tube Sa2Power tube Sa3Power tube Sa6Conducting, power tube Sa1Power tube Sa4Power tube Sa5When the inverter is turned off, the output level of the inverter is 0; when power tube Sa2Power tube Sa3Power tube Sa5Conducting, power tube Sa1Power tube Sa4Power tube Sa6When the inverter is turned off, the output level of the inverter is 0; when power tube Sa3Power tube Sa4Power tube Sa5Conducting, power tube Sa1Power tube Sa2Power tube Sa6When the inverter is turned off, the output level of the inverter is-E.
When the output voltage is E, let the power tube Sa2And a power tube Sa3When the power tube S works in a high-frequency state and the output voltage is-E, the power tube S is enableda1And a power tube Sa4Working in a high-frequency state; power tube Sa5Power tube Sa6The system is always operated in a power frequency state. The power tube working at high frequency adopts SiC MOSFET, and the power tube working at power frequency adopts Si IGBT.
At least the following beneficial effects can be achieved: the advantage of low switching loss of the SiC device under a high-frequency condition is utilized, the main switching loss in the loss of the power tube is concentrated to the SiC MOSFET, the Si IGBT bears the on-state loss, and the circuit cost is reduced while the performance advantage of the SiC device is utilized; the utility model discloses a three-phase structure can obtain higher output current and output electric power, realizes high integrated level, high power level.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described above, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (5)

1. A topology structure of SiC/Si mixed three-phase three-level ANPC inverter comprises a DC power supply UdcDC voltage-dividing capacitor C1DC voltage-dividing capacitor C2Three-phase three-level ANPC inverter bridge arm A, bridge arm B, bridge arm C, output filter inductor, output filter capacitor, load resistor, and DC voltage-dividing capacitor C1Positive terminal and DC power supply UdcThe positive pole of the capacitor is connected, the formed node is a potential point P, and a direct current voltage-dividing capacitor C1Negative terminal and DC voltage divisionCapacitor C2The positive terminal of the capacitor is connected, the formed node is a potential point O, and a direct current voltage-dividing capacitor C2Negative terminal of and DC power supply UdcThe negative electrode of (1) is connected, and the formed node is a potential point N; the three-phase three-level ANPC inverter bridge is characterized by comprising a power frequency module and a high-frequency module, wherein the power frequency module is a power tube Sa5And a power tube Sa6Power tube Sb5And a power tube Sb6Power tube Sc5And a power tube Sc6The components are Si IGBT, high frequency module and power tube Sa1Power tube Sa2Power tube Sa3Power tube Sa4And a power tube Sb1Power tube Sb2Power tube Sb3Power tube Sb4And a power tube Sc1Power tube Sc2Power tube Sc3Power tube Sc4The components are all SiC MOSFETs.
2. The SiC/Si hybrid three-phase three-level ANPC inverter topology of claim 1, in which the leg a comprises a power tube Sa1To Sa6Power tube Sa1Is connected to potential point P, power tube Sa1Source electrode and power tube Sa5Collector electrode and power tube Sa2Is connected to the drain of the power transistor Sa5Emitter and power tube Sa6Is connected with the potential point O, and a power tube Sa6Emitter and power tube Sa4Drain electrode of (1) and power tube Sa3Is connected to the source of the power transistor Sa4Is connected with a potential point N, a power tube Sa2Source electrode and power tube Sa3The node is a potential point A and is used as an output end of an A phase of the inverter;
the bridge arm B comprises a power tube Sb1To Sb6Power tube Sb1Is connected to potential point P, power tube Sb1Source electrode and power tube Sb5Collector electrode and power tube Sb2Is connected to the drain of the power transistor Sb5Emitter and power tube Sb6Is connected with the potential point O, and a power tube Sb6Emitter and power tube Sb4Drain electrode of (1) and power tube Sb3Is connected to the source of the power transistor Sb4Is connected with a potential point N, a power tube Sb2Source electrode and power tube Sb3The node is a potential point B and is used as the output end of the phase B of the inverter;
the bridge arm C comprises a power tube Sc1To Sc6Power tube Sc1Is connected to potential point P, power tube Sc1Source electrode and power tube Sc5Collector electrode and power tube Sc2Is connected to the drain of the power transistor Sc5Emitter and power tube Sc6Is connected with the potential point O, and a power tube Sc6Emitter and power tube Sc4Drain electrode of (1) and power tube Sc3Is connected to the source of the power transistor Sc4Is connected with a potential point N, a power tube Sc2Source electrode and power tube Sc3The node is a potential point C and is used as the output end of the phase C of the inverter.
3. The SiC/Si hybrid three-phase three-level ANPC inverter topology of claim 1, wherein the output filter inductor, output filter capacitor, and load resistor comprise a filter inductor LafFilter inductor LbfFilter inductor LcfFilter capacitor CafFilter capacitor CbfFilter capacitor CcfLoad resistance RaLoad resistance RbLoad resistance RcPower tube Sa2Source electrode and power tube Sa3After being connected, the drain electrode of the capacitor passes through an output filter inductor LafAnd a filter capacitor CafIs connected to the positive terminal of the load resistor RaAnd output filter capacitor CafParallel power tubes Sb2Source electrode and power tube Sb3After being connected, the drain electrode of the capacitor passes through an output filter inductor LbfAnd a filter capacitor CbfIs connected to the positive terminal of the load resistor RbAnd output filter capacitor CbfParallel power tubes Sc2Source electrode and power tube Sc3After being connected, the drain electrode of the capacitor passes through an output filter inductor LcfAnd a filter capacitor CcfIs connected to the positive terminal ofConnected to a load resistor RcAnd output filter capacitor CcfParallel connection, filter capacitor CafFilter capacitor CbfFilter capacitor CcfThe negative electrode end of the anode is connected, and the formed node is a potential point n.
4. The SiC/Si hybrid three-phase three-level ANPC inverter topology structure according to claim 1, wherein the power frequency module uses Si IGBT, the high frequency module uses SiC MOSFET, both discrete devices are adopted, and both ends are connected with a diode in reverse parallel.
5. The SiC/Si hybrid three-phase three-level ANPC inverter topology of claim 1, wherein the dc power source U isdcIs a 1000V DC source of Chroma company model 62150, and a DC voltage dividing capacitor C1DC voltage-dividing capacitor C2Is formed by connecting 4 CD294 aluminum electrolytic capacitors with the withstand voltage value of 450V and the capacitance value of 470 muF in parallel, and a filter inductor LafFilter inductor LbfFilter inductor Lcf1.4mH, and a filter capacitor CafFilter capacitor CbfFilter capacitor CcfBoth were 4.7. mu.F.
CN202022940265.3U 2020-12-10 2020-12-10 SiC/Si mixed three-phase three-level ANPC inverter topological structure Active CN215072188U (en)

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Denomination of utility model: A SiC / Si hybrid three-phase three-level ANPC inverter topology

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