CN212909382U - Three-level current transformation module - Google Patents

Three-level current transformation module Download PDF

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CN212909382U
CN212909382U CN202021145235.7U CN202021145235U CN212909382U CN 212909382 U CN212909382 U CN 212909382U CN 202021145235 U CN202021145235 U CN 202021145235U CN 212909382 U CN212909382 U CN 212909382U
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switch unit
igbt
switching unit
switch
diode
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田伟
谢舜蒙
张�荣
谭一帆
刘杰
朱武
杨乐乐
彭凯
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Hunan Power Action Technology Co ltd
CRRC Zhuzhou Institute Co Ltd
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CRRC Zhuzhou Institute Co Ltd
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Abstract

The utility model provides a three-level current transformation module, which comprises three single-phase circuits, a current transformation module and a current transformation module, wherein the three single-phase circuits are used for respectively outputting U-phase electricity, V-phase electricity and W-phase electricity in three-phase alternating current; each single-phase circuit comprises a first switch unit, a second switch unit, a third switch unit and a fourth switch unit which are sequentially connected in series; the input end of the first switch unit is connected with the positive pole of a direct-current power supply, the output end of the fourth switch unit is connected with the negative pole of the direct-current power supply, and a connection node between the output end of the second switch unit and the input end of the third switch unit is the output end of a corresponding single-phase circuit; the first switch unit and the fourth switch unit are hybrid switch units based on Si devices and SiC devices or switch units based on SiC devices; the second switching unit and the third switching unit are switching units based on a Si device. The integral loss of the converter module is reduced, the cost increase range is small, balanced heat dissipation is facilitated, and the service life of each switch unit is more consistent.

Description

Three-level current transformation module
Technical Field
The disclosure relates to the field of electronic power, in particular to a three-level converter module.
Background
The current transformation module can realize voltage change, such as direct current-alternating current conversion, and the structure of the current transformation module comprises a two-level topology structure and a three-level topology structure. Compared with a conventional two-level topological structure, the three-level topological structure has the advantages of large output capacity, high output voltage, low current harmonic content and the like, but when a current transformation module of the level topological structure works normally, each switch unit and each clamping diode are damaged, and the heat balance of a chip inside a device needs to be realized by a radiator. An Insulated Gate Bipolar Transistor (IGBT) is often used as the switching element. The higher the switching frequency of each switching unit, the lower the output harmonic content, the smaller the filter volume but the higher the loss, and the higher the output power, the higher the loss, so in order to improve the output capability and efficiency of the converter module, measures need to be taken to reduce the total loss of the converter module. However, the cost of the converter module is often greatly increased due to the reduction of the loss of each switch unit, so that a converter module which not only reduces the overall loss but also does not greatly increase the cost is urgently needed.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, the present disclosure provides a three-level converter module, which solves the technical problem that the converter module in the prior art cannot achieve the purpose of reducing the overall loss and increasing the cost to a small extent.
The utility model provides a three-level current transformation module, which comprises three single-phase circuits, a current transformation module and a current transformation module, wherein the three single-phase circuits are used for respectively outputting U-phase electricity, V-phase electricity and W-phase electricity in three-phase alternating current;
each single-phase circuit comprises a first switch unit, a second switch unit, a third switch unit and a fourth switch unit which are sequentially connected in series;
the input end of the first switch unit is connected with the positive pole of a direct-current power supply, the output end of the fourth switch unit is connected with the negative pole of the direct-current power supply, and a connection node between the output end of the second switch unit and the input end of the third switch unit is the output end of a corresponding single-phase circuit;
the first switch unit and the fourth switch unit are hybrid switch units based on Si devices and SiC devices or switch units based on SiC devices;
the second switching unit and the third switching unit are switching units based on a Si device.
According to an embodiment of the present disclosure, optionally, in the above three-level converter module, the first switching unit, the second switching unit, the third switching unit, and the fourth switching unit all include an IGBT tube and a freewheeling diode;
the current collectors of the IGBT tubes are input ends of the corresponding switch units, the emitters of the IGBT tubes are output ends of the corresponding switch units, the grids of the IGBT tubes are connected with an external control circuit, the cathodes of the freewheel diodes are connected with the corresponding current collectors of the IGBT tubes, and the anodes of the freewheel diodes are connected with the corresponding emitting electrodes of the IGBT tubes.
According to an embodiment of the present disclosure, optionally, in the three-level current conversion module,
the IGBT tube of the first switch unit and the IGBT tube of the fourth switch unit are Si IGBT tubes or SiC IGBT tubes;
the freewheeling diode of the first switching unit and the freewheeling diode of the fourth switching unit are SiC diodes;
the Si IGBT tube and the SiC diode form the hybrid switch unit based on the Si device and the SiC device, and the SiC IGBT tube and the SiC diode form the switch unit based on the SiC device.
According to an embodiment of the present disclosure, optionally, in the three-level current conversion module,
the IGBT tube of the second switch unit and the IGBT tube of the third switch unit are Si IGBT tubes;
the freewheel diode of the second switching unit and the freewheel diode of the third switching unit are Si diodes;
wherein the Si IGBT tube and the Si diode constitute the switching unit based on the Si device.
According to an embodiment of the present disclosure, optionally, the three-level converter module further includes a first capacitor and a second capacitor;
the first end of the first capacitor is connected with the positive pole of the direct-current power supply, the second end of the first capacitor is connected with the first end of the second capacitor, and the second end of the second capacitor is connected with the negative pole of the direct-current power supply.
According to an embodiment of the present disclosure, optionally, in the three-level converter module, each single-phase circuit further includes a first clamping diode and a second clamping diode;
the cathode of the first clamping diode is connected with the output end of the first switching unit, the anode of the first clamping diode is connected with the second end of the first capacitor, the cathode of the second clamping diode is connected with the second end of the first capacitor, and the anode of the second clamping diode is connected with the output end of the third switching unit.
According to an embodiment of the present disclosure, optionally, in the three-level converter module, the first switch unit and the second switch unit form an upper bridge arm circuit of a corresponding single-phase circuit;
the third switching unit and the fourth switching unit form a corresponding lower arm circuit of the single-phase circuit.
By adopting the technical scheme, the following technical effects can be at least achieved:
the utility model provides a three-level current transformation module, which comprises three single-phase circuits, a current transformation module and a current transformation module, wherein the three single-phase circuits are used for respectively outputting U-phase electricity, V-phase electricity and W-phase electricity in three-phase alternating current; each single-phase circuit comprises a first switch unit, a second switch unit, a third switch unit and a fourth switch unit which are sequentially connected in series; the input end of the first switch unit is connected with the positive pole of a direct-current power supply, the output end of the fourth switch unit is connected with the negative pole of the direct-current power supply, and a connection node between the output end of the second switch unit and the input end of the third switch unit is the output end of a corresponding single-phase circuit; the first switch unit and the fourth switch unit are hybrid switch units based on Si devices and SiC devices or switch units based on SiC devices; the second switching unit and the third switching unit are switching units based on a Si device. The integral loss of the converter module can be reduced, the efficiency of the converter module is improved, and the cost increase amplitude is small. And the loss of each switch unit at different positions is close, so that the balanced heat dissipation is facilitated, and the expected service life of each switch unit is more consistent.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a circuit diagram of a three-level converter module shown in an exemplary embodiment of the present disclosure;
fig. 2 is a schematic diagram illustrating a structure comparison of a hybrid switching cell based on a Si device and a SiC device, a switching cell based on a SiC device, and a switching cell based on a Si device according to an exemplary embodiment of the present disclosure.
Detailed Description
Embodiments of the present disclosure will be described in detail with reference to the accompanying drawings and examples, so that how to apply technical means to solve technical problems and achieve the corresponding technical effects can be fully understood and implemented. The embodiments and the features of the embodiments of the present disclosure can be combined with each other without conflict, and the formed technical solutions are all within the protection scope of the present disclosure.
It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In order to provide a thorough understanding of the present disclosure, a detailed structure will be set forth in the following description in order to explain the technical solutions proposed by the present disclosure. The following detailed description of the preferred embodiments of the present disclosure, however, the present disclosure may have other embodiments in addition to these detailed descriptions.
Fig. 1 is a circuit diagram of a three-level converter module 100 according to an embodiment of the present disclosure.
As shown in fig. 1, an embodiment of the present disclosure provides a three-level converter module 100, which includes an a single-phase circuit 101, a B single-phase circuit 102, a C single-phase circuit 103, and a first capacitor CpAnd a second capacitor Cn. Wherein, the A single-phase circuit 101 outputs U-phase power of three-phase alternating current, and the B single-phase circuit 102 outputs V-phase power of three-phase alternating currentThe C single-phase circuit 103 outputs W-phase power of three-phase alternating current, and the first capacitor CpA first end connected with the positive pole P of the DC power supply and a first capacitor CpSecond terminal of the first capacitor is connected with a second capacitor CnA first terminal of a second capacitor CnThe second end of the first capacitor is connected with the negative electrode N of the direct current power supply and the first capacitor CpAnd a second capacitor CnIs the dc side midpoint O.
The a single-phase circuit 101 includes a first switching unit T1, a second switching unit T2, a third switching unit T3, and a fourth switching unit T4, and a first clamping diode D1 and a second clamping diode D2, which are sequentially connected in series. The input end of the first switch unit T1 is connected to the positive pole P of the dc power supply, the output end of the first switch unit T1 is connected to the input end of the second switch unit T2, the output end of the second switch unit T2 is connected to the input end of the third switch unit T3, the output end of the third switch unit T3 is connected to the input end of the fourth switch unit T4, and the output end of the fourth switch unit T4 is connected to the negative pole N of the dc power supply. The cathode of the first clamping diode D1 is connected to the output terminal of the first switching unit T1, the anode of the first clamping diode D1 is connected to the dc-side midpoint O, the cathode of the second clamping diode D2 is connected to the dc-side midpoint O (i.e., the connection point of the first clamping diode D1 and the second clamping diode D2 is connected to the dc-side midpoint O), and the anode of the second clamping diode D1 is connected to the output terminal of the third switching unit T3. The first switch unit T1 and the second switch unit T2 form an upper bridge arm circuit of the A single-phase circuit; the third switching unit T3 and the fourth switching unit T4 constitute a lower arm circuit of the a single-phase circuit. A connection node between the output terminal of the second switching unit T2 and the input terminal of the third switching unit T3 is the output terminal a of the a single-phase circuit.
In the a single-phase circuit 101, the first switching unit T1 includes a first IGBT tube and a first freewheeling diode, the second switching unit T2 includes a second IGBT tube and a second freewheeling diode, the third switching unit T3 includes a third IGBT tube and a third freewheeling diode, and the fourth switching unit T4 includes a fourth IGBT tube and a fourth freewheeling diode.
In the a single-phase circuit 101, the collector of the first IGBT is the input terminal of the first switching unit T1, the emitter of the first IGBT is the output terminal of the first switching unit T1, the gate of the first IGBT is connected to the external control circuit, the cathode of the first freewheeling diode is connected to the input terminal of the first switching unit T1 (i.e., the collector of the first IGBT), and the anode of the first freewheeling diode is connected to the output terminal of the first switching unit T1 (i.e., the emitter of the first IGBT).
In the a single-phase circuit 101, the collector of the second IGBT is the input terminal of the second switching unit T2, the emitter of the second IGBT is the output terminal of the second switching unit T2, the gate of the second IGBT is connected to the external control circuit, the cathode of the second freewheeling diode is connected to the input terminal of the second switching unit T2 (i.e., the collector of the second IGBT), and the anode of the second freewheeling diode is connected to the output terminal of the second switching unit T2 (i.e., the emitter of the second IGBT).
In the a single-phase circuit 101, the collector of the third IGBT is the input terminal of the third switching unit T3, the emitter of the third IGBT is the output terminal of the third switching unit T3, the gate of the third IGBT is connected to the external control circuit, the cathode of the third freewheeling diode is connected to the input terminal of the third switching unit T3 (i.e., the collector of the third IGBT), and the anode of the third freewheeling diode is connected to the output terminal of the third switching unit T3 (i.e., the emitter of the third IGBT).
In the a single-phase circuit 101, a collector of a fourth IGBT is an input terminal of the fourth switching unit T4, an emitter of the fourth IGBT is an output terminal of the fourth switching unit T4, a gate of the fourth IGBT is connected to the external control circuit, a cathode of a fourth freewheeling diode is connected to the input terminal of the fourth switching unit T4 (i.e., the collector of the fourth IGBT), and an anode of the fourth freewheeling diode is connected to the output terminal of the fourth switching unit T4 (i.e., the emitter of the fourth IGBT).
In the a single-phase circuit 101, the first switching unit T1 and the fourth switching unit T4 (outer switching units) are hybrid switching units based on Si devices and SiC devices or switching units based on SiC devices, and the second switching unit T2 and the third switching unit T3 (inner switching units) are switching units based on Si devices. As shown in fig. 2, the IGBT tube of the hybrid switching unit based on the Si device and the SiC device is a Si IGBT tube, and the freewheeling diode is a SiC diode; an IGBT tube of a switch unit based on the SiC device is a SiC IGBT tube, and a freewheeling diode is a SiC diode; the IGBT tube of the switching unit based on the Si device is a Si IGBT tube, and the freewheeling diode is a Si diode. Namely, the first freewheeling diode and the fourth freewheeling diode are SiC diodes, the first IGBT tube and the fourth IGBT tube are Si IGBT tubes or SiC IGBT tubes, the second freewheeling diode and the third freewheeling diode are Si diodes, and the second IGBT tube and the third IGBT tube are Si IGBT tubes.
The B single-phase circuit 102 includes a first switching unit T5, a second switching unit T6, a third switching unit T7, and a fourth switching unit T8, and a first clamping diode D3 and a second clamping diode D4, which are sequentially connected in series. The input end of the first switch unit T5 is connected to the positive pole P of the dc power supply, the output end of the first switch unit T5 is connected to the input end of the second switch unit T6, the output end of the second switch unit T6 is connected to the input end of the third switch unit T7, the output end of the third switch unit T7 is connected to the input end of the fourth switch unit T8, and the output end of the fourth switch unit T8 is connected to the negative pole N of the dc power supply. The cathode of the first clamping diode D3 is connected to the output terminal of the first switching unit T5, the anode of the first clamping diode D3 is connected to the dc-side midpoint O, the cathode of the second clamping diode D4 is connected to the dc-side midpoint O (i.e., the connection point of the first clamping diode D3 and the second clamping diode D4 is connected to the dc-side midpoint O), and the anode of the second clamping diode D3 is connected to the output terminal of the third switching unit T7. The first switch unit T5 and the second switch unit T6 form an upper bridge arm circuit of the B single-phase circuit; the third switching unit T7 and the fourth switching unit T8 constitute a lower arm circuit of the B single-phase circuit. A connection node between the output terminal of the second switching unit T6 and the input terminal of the third switching unit T7 is an output terminal B of the B single-phase circuit.
In the B single-phase circuit 102, the first switching unit T5 includes a first IGBT tube and a first freewheeling diode, the second switching unit T6 includes a second IGBT tube and a second freewheeling diode, the third switching unit T7 includes a third IGBT tube and a third freewheeling diode, and the fourth switching unit T8 includes a fourth IGBT tube and a fourth freewheeling diode.
In the B single-phase circuit 102, a collector of the first IGBT is an input terminal of the first switching unit T5, an emitter of the first IGBT is an output terminal of the first switching unit T5, a gate of the first IGBT is connected to the external control circuit, a cathode of the first freewheeling diode is connected to an input terminal of the first switching unit T5 (i.e., a collector of the first IGBT), and an anode of the first freewheeling diode is connected to an output terminal of the first switching unit T5 (i.e., an emitter of the first IGBT).
In the B single-phase circuit 102, the collector of the second IGBT is an input terminal of the second switching unit T6, the emitter of the second IGBT is an output terminal of the second switching unit T6, the gate of the second IGBT is connected to the external control circuit, the cathode of the second freewheeling diode is connected to the input terminal of the second switching unit T6 (i.e., the collector of the second IGBT), and the anode of the second freewheeling diode is connected to the output terminal of the second switching unit T6 (i.e., the emitter of the second IGBT).
In the B single-phase circuit 102, the collector of the third IGBT is an input terminal of the third switching unit T7, the emitter of the third IGBT is an output terminal of the third switching unit T7, the gate of the third IGBT is connected to the external control circuit, the cathode of the third freewheeling diode is connected to the input terminal of the third switching unit T7 (i.e., the collector of the third IGBT), and the anode of the third freewheeling diode is connected to the output terminal of the third switching unit T7 (i.e., the emitter of the third IGBT).
In the B single-phase circuit 102, a collector of a fourth IGBT is an input terminal of the fourth switching unit T8, an emitter of the fourth IGBT is an output terminal of the fourth switching unit T8, a gate of the fourth IGBT is connected to the external control circuit, a cathode of a fourth freewheeling diode is connected to the input terminal of the fourth switching unit T8 (i.e., the collector of the fourth IGBT), and an anode of the fourth freewheeling diode is connected to the output terminal of the fourth switching unit T8 (i.e., the emitter of the fourth IGBT).
In the B single-phase circuit 102, the first switching unit T5 and the fourth switching unit T8 (outer switching units) are hybrid switching units based on Si devices and SiC devices or switching units based on SiC devices, and the second switching unit T6 and the third switching unit T7 (inner switching units) are switching units based on Si devices. As shown in fig. 2, the IGBT tube of the hybrid switching unit based on the Si device and the SiC device is a Si IGBT tube, and the freewheeling diode is a SiC diode; an IGBT tube of a switch unit based on the SiC device is a SiC IGBT tube, and a freewheeling diode is a SiC diode; the IGBT tube of the switching unit based on the Si device is a Si IGBT tube, and the freewheeling diode is a Si diode. Namely, the first freewheeling diode and the fourth freewheeling diode are SiC diodes, the first IGBT tube and the fourth IGBT tube are Si IGBT tubes or SiC IGBT tubes, the second freewheeling diode and the third freewheeling diode are Si diodes, and the second IGBT tube and the third IGBT tube are Si IGBT tubes.
The C single-phase circuit 103 includes a first switching unit T9, a second switching unit T10, a third switching unit T11, and a fourth switching unit T12, and a first clamping diode D5 and a second clamping diode D6, which are sequentially connected in series. The input end of the first switch unit T9 is connected to the positive pole P of the dc power supply, the output end of the first switch unit T9 is connected to the input end of the second switch unit T10, the output end of the second switch unit T10 is connected to the input end of the third switch unit T11, the output end of the third switch unit T11 is connected to the input end of the fourth switch unit T12, and the output end of the fourth switch unit T12 is connected to the negative pole N of the dc power supply. The cathode of the first clamping diode D5 is connected to the output terminal of the first switching unit T9, the anode of the first clamping diode D5 is connected to the dc-side midpoint O, the cathode of the second clamping diode D6 is connected to the dc-side midpoint O (i.e., the connection point of the first clamping diode D5 and the second clamping diode D6 is connected to the dc-side midpoint O), and the anode of the second clamping diode D5 is connected to the output terminal of the third switching unit T11. The first switch unit T9 and the second switch unit T10 form an upper bridge arm circuit of the C single-phase circuit; the third switching unit T11 and the fourth switching unit T12 constitute a lower arm circuit of the C single-phase circuit. A connection node between the output terminal of the second switching unit T10 and the input terminal of the third switching unit T11 is the output terminal C of the C single-phase circuit.
In the C single-phase circuit 103, the first switching unit T9 includes a first IGBT tube and a first freewheeling diode, the second switching unit T10 includes a second IGBT tube and a second freewheeling diode, the third switching unit T11 includes a third IGBT tube and a third freewheeling diode, and the fourth switching unit T12 includes a fourth IGBT tube and a fourth freewheeling diode.
In the single-phase circuit 103, a collector of the first IGBT is an input terminal of the first switching unit T9, an emitter of the first IGBT is an output terminal of the first switching unit T9, a gate of the first IGBT is connected to the external control circuit, a cathode of the first freewheeling diode is connected to the input terminal of the first switching unit T9 (i.e., the collector of the first IGBT), and an anode of the first freewheeling diode is connected to the output terminal of the first switching unit T9 (i.e., the emitter of the first IGBT).
In the single-phase circuit 103, the collector of the second IGBT is the input terminal of the second switching unit T10, the emitter of the second IGBT is the output terminal of the second switching unit T10, the gate of the second IGBT is connected to the external control circuit, the cathode of the second freewheeling diode is connected to the input terminal of the second switching unit T10 (i.e., the collector of the second IGBT), and the anode of the second freewheeling diode is connected to the output terminal of the second switching unit T10 (i.e., the emitter of the second IGBT).
In the single-phase circuit 103, the collector of the third IGBT is an input terminal of the third switching unit T11, the emitter of the third IGBT is an output terminal of the third switching unit T11, the gate of the third IGBT is connected to the external control circuit, the cathode of the third freewheeling diode is connected to the input terminal of the third switching unit T11 (i.e., the collector of the third IGBT), and the anode of the third freewheeling diode is connected to the output terminal of the third switching unit T11 (i.e., the emitter of the third IGBT).
In the single-phase circuit 103, a collector of a fourth IGBT is an input terminal of the fourth switching unit T12, an emitter of the fourth IGBT is an output terminal of the fourth switching unit T12, a gate of the fourth IGBT is connected to the external control circuit, a cathode of a fourth freewheeling diode is connected to the input terminal of the fourth switching unit T12 (i.e., the collector of the fourth IGBT), and an anode of the fourth freewheeling diode is connected to the output terminal of the fourth switching unit T12 (i.e., the emitter of the fourth IGBT).
In the C single-phase circuit 103, the first switching unit T9 and the fourth switching unit T12 (outer switching units) are hybrid switching units based on Si devices and SiC devices or switching units based on SiC devices, and the second switching unit T10 and the third switching unit T11 (inner switching units) are switching units based on Si devices. As shown in fig. 2, the IGBT tube of the hybrid switching unit based on the Si device and the SiC device is a Si IGBT tube, and the freewheeling diode is a SiC diode; an IGBT tube of a switch unit based on the SiC device is a SiC IGBT tube, and a freewheeling diode is a SiC diode; the IGBT tube of the switching unit based on the Si device is a Si IGBT tube, and the freewheeling diode is a Si diode. Namely, the first freewheeling diode and the fourth freewheeling diode are SiC diodes, the first IGBT tube and the fourth IGBT tube are Si IGBT tubes or SiC IGBT tubes, the second freewheeling diode and the third freewheeling diode are Si diodes, and the second IGBT tube and the third IGBT tube are Si IGBT tubes.
It should be noted that the loss of the SiC IGBT tube is lower than that of the Si IGBT tube, and the loss of the SiC diode is lower than that of the Si diode, so that the loss of the switching unit based on the SiC device is lower than that of the hybrid switching unit based on the Si device and the SiC device, and the loss of the hybrid switching unit based on the Si device and the SiC device is lower than that of the switching unit based on the Si device.
The switch unit based on the Si device is a mature product applied in large scale, is low in price and high in loss, the switch unit based on the SiC device is an emerging technology, has the advantages of low loss and high switching speed, and is expensive, and the loss performance and the cost of the hybrid switch unit based on the Si device and the SiC device are between those of the switch unit based on the Si device and the switch unit based on the SiC device.
For comparison, in this embodiment, a simulation analysis is performed on the loss of the a single-phase circuit in the three-level converter module with the same switching unit in the prior art under a certain simulation condition. Table 1 is a simulation condition statistical table, and table 2 is a simulation result statistical table.
TABLE 1
Figure BDA0002546516690000091
Figure BDA0002546516690000101
TABLE 2
Unit cell Switching losses Conduction loss Total loss
T1 175.6W 88.3W 263.9W
T2 22W 139.9W 161.9W
T3 22W 139.9W 161.9W
T4 175.6W 88.3W 263.9W
D1 67W 47W 114W
D2 67W 47W 114W
It can be seen that in the three-level converter module with the same switch cells, the switching losses of the outer switch cells (T1 and T4) are much larger than those of the inner switch cells (T2 and T3), and the switching losses of the outer switch cells (T1 and T4) are about 175.6/22 times as large as those of the inner switch cells (T2 and T3) as 7.98 times, so that the switching losses of the outer switch cells (T1 and T4) in the three-level converter module are made to be the mixed switch cells based on Si devices and SiC devices or the switch cells based on SiC devices, and the switching losses of the inner switch cells (T2 and T3) are made to be the switch cells based on Si devices, so that the switching losses of the outer switch cells (T1 and T4) are made to be close to those of the inner switch cells (T2 and T3), which is beneficial to heat dissipation balance and improvement of the overall efficiency of the module, the life expectancy of each switch unit is more consistent, and only the outer switch units (T1 and T4) are hybrid switch units based on Si devices and SiC devices or switch units based on SiC devices which are high in price, so that the cost increase is less.
The present disclosure provides a three-level converter module 100, which includes three single-phase circuits for respectively outputting a U-phase power, a V-phase power, and a W-phase power of a three-phase alternating current; each single-phase circuit comprises a first switch unit, a second switch unit, a third switch unit and a fourth switch unit which are sequentially connected in series; the input end of the first switch unit is connected with a positive pole P of a direct-current power supply, the output end of the fourth switch unit is connected with a negative pole N of the direct-current power supply, and a connection node between the output end of the second switch unit and the input end of the third switch unit is the output end of a corresponding single-phase circuit; the first switch unit and the fourth switch unit are hybrid switch units based on Si devices and SiC devices or switch units based on SiC devices; the second switching unit and the third switching unit are switching units based on a Si device. The integral loss of the converter module can be reduced, the efficiency of the converter module is improved, and the cost increase amplitude is small. And the loss of each switch unit at different positions is close, so that the balanced heat dissipation is facilitated, and the expected service life of each switch unit is more consistent.
The above is merely a preferred embodiment of the present disclosure and is not intended to limit the present disclosure, which may be variously modified and varied by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure. Although the embodiments disclosed in the present disclosure are described above, the embodiments are merely used for understanding the present disclosure, and are not intended to limit the present disclosure. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure, and that the scope of the disclosure is to be limited only by the appended claims.

Claims (7)

1. A three-level current transformation module is characterized by comprising three single-phase circuits, a current transformation module and a current transformation module, wherein the three single-phase circuits are used for respectively outputting U-phase electricity, V-phase electricity and W-phase electricity in three-phase alternating current;
each single-phase circuit comprises a first switch unit, a second switch unit, a third switch unit and a fourth switch unit which are sequentially connected in series;
the input end of the first switch unit is connected with the positive pole of a direct-current power supply, the output end of the fourth switch unit is connected with the negative pole of the direct-current power supply, and a connection node between the output end of the second switch unit and the input end of the third switch unit is the output end of a corresponding single-phase circuit;
the first switch unit and the fourth switch unit are hybrid switch units based on Si devices and SiC devices or switch units based on SiC devices;
the second switching unit and the third switching unit are switching units based on a Si device.
2. The three-level converter module of claim 1, wherein the first, second, third and fourth switching units each comprise an IGBT tube and a freewheeling diode;
the current collectors of the IGBT tubes are input ends of the corresponding switch units, the emitters of the IGBT tubes are output ends of the corresponding switch units, the grids of the IGBT tubes are connected with an external control circuit, the cathodes of the freewheel diodes are connected with the corresponding current collectors of the IGBT tubes, and the anodes of the freewheel diodes are connected with the corresponding emitting electrodes of the IGBT tubes.
3. The three-level current transforming module according to claim 2,
the IGBT tube of the first switch unit and the IGBT tube of the fourth switch unit are Si IGBT tubes or SiC IGBT tubes;
the freewheeling diode of the first switching unit and the freewheeling diode of the fourth switching unit are SiC diodes;
the Si IGBT tube and the SiC diode form the hybrid switch unit based on the Si device and the SiC device, and the SiC IGBT tube and the SiC diode form the switch unit based on the SiC device.
4. The three-level current transforming module according to claim 2,
the IGBT tube of the second switch unit and the IGBT tube of the third switch unit are Si IGBT tubes;
the freewheel diode of the second switching unit and the freewheel diode of the third switching unit are Si diodes;
wherein the Si IGBT tube and the Si diode constitute the switching unit based on the Si device.
5. The three-level converter module of claim 1, further comprising a first capacitor and a second capacitor;
the first end of the first capacitor is connected with the positive pole of the direct-current power supply, the second end of the first capacitor is connected with the first end of the second capacitor, and the second end of the second capacitor is connected with the negative pole of the direct-current power supply.
6. The three-level converter module of claim 5, wherein each single-phase circuit further comprises a first clamping diode and a second clamping diode;
the cathode of the first clamping diode is connected with the output end of the first switching unit, the anode of the first clamping diode is connected with the second end of the first capacitor, the cathode of the second clamping diode is connected with the second end of the first capacitor, and the anode of the second clamping diode is connected with the output end of the third switching unit.
7. The three-level current transforming module according to claim 1,
the first switch unit and the second switch unit form an upper bridge arm circuit of a corresponding single-phase circuit;
the third switching unit and the fourth switching unit form a corresponding lower arm circuit of the single-phase circuit.
CN202021145235.7U 2020-06-18 2020-06-18 Three-level current transformation module Active CN212909382U (en)

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