CN215069717U - Protection device for preventing switch water inlet misoperation and impedance processing circuit - Google Patents
Protection device for preventing switch water inlet misoperation and impedance processing circuit Download PDFInfo
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- CN215069717U CN215069717U CN202121242465.XU CN202121242465U CN215069717U CN 215069717 U CN215069717 U CN 215069717U CN 202121242465 U CN202121242465 U CN 202121242465U CN 215069717 U CN215069717 U CN 215069717U
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 230000007257 malfunction Effects 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000005669 field effect Effects 0.000 claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims description 27
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
A protection device for preventing switch water-intake misoperation and an impedance processing circuit, wherein the protection device comprises a vehicle-mounted switch, an impedance processing circuit, a level adjusting circuit and a microprocessor, the impedance processing circuit is connected between the vehicle-mounted switch and the level adjusting circuit and comprises a protection switch, a bias unit and a closing unit, wherein the protection switch is composed of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), when the impedance is reduced due to accumulation of electrolytic deposits generated by water inflow on the vehicle-mounted switch, the bias unit can conduct the protection switch, so that a large current passes through the vehicle-mounted switch to blow the electrolytic deposits, and the vehicle-mounted switch recovers normal open-circuit impedance; the closing unit can control the protection switch to be switched off to avoid misoperation of the protection switch when a user switches on the vehicle-mounted switch; thus, the probability of malfunction of the vehicle-mounted component (such as a vehicle lamp) due to the electrolytic deposits is reduced.
Description
[ technical field ] A method for producing a semiconductor device
The utility model relates to an on-vehicle switch protection device especially indicates a protection device and impedance processing circuit that can avoid the switch to trigger by mistake because of intaking.
[ background of the invention ]
At present, most of vehicle-mounted switches on the two-wheeled electric vehicle belong to non-waterproof switches, such as headlights, horns, direction lamps, side bracket switches or signal switches on the electric vehicle. Taking headlights or turn signals of electric vehicles as an example, most of the existing lamps composed of Light Emitting Diodes (LEDs) are used as light sources to replace the tungsten filament lamps in the early days. Referring to fig. 4, taking a vehicle-mounted switch S of an electric vehicle as an example, a first end of the vehicle-mounted switch S is connected to a working voltage V, the working voltage V can be directly or indirectly provided by a battery pack inside the electric vehicle, and a second end of the vehicle-mounted switch S is connected to a microprocessor 70 through a level adjustment circuit 60; the ON-board switch S is switched between an ON (ON)/OFF (OFF) state according to a user operation state, the level conversion circuit 60 outputs corresponding high and low level signals to the microprocessor 70 according to the state of the ON-board switch S, and the microprocessor 70 determines whether to drive the LED lamp according to the high and low level signals.
The switch S of fig. 4 does not have any circuit for preventing malfunction, so when the switch S has a water inflow problem, for example, the electric vehicle is rained to cause rainwater to be accumulated on the contact surface of the switch S, the vehicle-mounted switch S has a small amount of liquid residue on the surface, and one end of the switch S continuously receives the working voltage V, so that the electrolytic effect is continuously generated on the surface of the vehicle-mounted switch S, so that electrolytic deposits are gradually generated at both ends of the contact of the switch S to reduce the impedance, even if the on-board switch S is in the OFF state, the electrolytic deposits cause the impedance across the switch S to no longer be infinite, the on-board switch S thus forms a high-impedance element enabling an electrolytic current to pass through the on-board switch S from the operating voltage V, however, the LED lamp can be driven to light only with a small current, and thus the LED lamp may flicker abnormally or light up by mistake.
Referring to fig. 5, in order to overcome the problem of low impedance of the switch S in fig. 4 caused by the electrolytic deposition, a pair of ground resistors R is connected to the second end of the on-board switch S, the resistance of the pair of ground resistors R is about several hundred ohms (e.g., 600 ohms), and the pair of ground resistors R and the high impedance element formed by the switch S after the electrolytic deposition is generated form a voltage dividing circuit, so as to reduce the voltage received by the level adjustment circuit 60, thereby reducing the probability of malfunction of the element controlled by the on-board switch S. However, the ground resistor R may cause extra power consumption when the switch S is turned on, and if a better anti-malfunction effect is to be obtained, the resistance value of the ground resistor R needs to be lower, but the current passing through the ground resistor R may be increased, which may increase the power of the ground resistor R, and the circuit board on which the ground resistor R is located may be easily scalded, and even when an overvoltage test is performed, the circuit board may be burnt due to the excessively high power of the ground resistor R.
[ Utility model ] content
For overcoming the switch on the electric motor car because of the problem of intaking, lead to the unusual malfunction of component that the switch corresponds the control, the utility model provides a prevent that switch from intaking protection device and impedance processing circuit of malfunction.
According to the utility model discloses a first aspect provides a prevent switch malfunction of intaking's protection device, and this prevent switch malfunction of intaking's protection device contains:
a vehicle-mounted switch;
an impedance processing circuit, comprising:
the protective switch is connected with the vehicle-mounted switch and is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET);
the bias unit is connected with the vehicle-mounted switch and the protection switch, wherein when the vehicle-mounted switch is turned off, the bias unit drives the protection switch to be turned on along with the reduction of the impedance of the vehicle-mounted switch; and
the closing unit is connected with the vehicle-mounted switch and the protection switch, wherein when the vehicle-mounted switch is switched on, the closing unit controls the protection switch to be switched off;
the level adjusting circuit is connected with the impedance processing circuit and outputs a corresponding high or low level signal according to the state of the vehicle-mounted switch; and
and the microprocessor receives the high or low level signal output by the level adjusting circuit.
According to the utility model discloses a second aspect provides an impedance processing circuit for preventing switch malfunction of intaking, is applied to on-vehicle switch, and this impedance processing circuit for preventing switch malfunction of intaking contains:
the protective switch is connected with the vehicle-mounted switch and is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET);
the bias unit is connected with the vehicle-mounted switch and the protection switch, wherein when the vehicle-mounted switch is turned off, the bias unit drives the protection switch to be turned on along with the reduction of the impedance of the vehicle-mounted switch; and
and the closing unit is connected with the vehicle-mounted switch and the protection switch, wherein when the vehicle-mounted switch is switched on, the closing unit controls the protection switch to be switched off.
The bias unit can drive the protection switch to be instantly conducted along with the gradual increase of electrolytic deposits on the vehicle-mounted switch of the electric vehicle, when the protection switch is conducted, a large current passes through the vehicle-mounted switch, the electrolytic deposits can be blown through the large current, the vehicle-mounted switch is enabled to be recovered to an infinite resistance value in a disconnected state, and the misoperation of elements corresponding to the electric vehicle switch is avoided.
[ description of the drawings ]
Fig. 1 is a detailed circuit diagram of a protection device for preventing water from entering a switch and causing malfunction according to an embodiment of the present invention.
Fig. 2 is a diagram illustrating the operation of the circuit for turning OFF (OFF) to ON (ON) the protection switch Q1 in the protection device for preventing the malfunction of the switch caused by water inflow according to an embodiment of the present invention.
Fig. 3 is a circuit diagram illustrating the operation of the closing unit control protection switch Q1 in the protection device for preventing the malfunction of the switch due to water inflow according to an embodiment of the present invention in an OFF (OFF) state.
Fig. 4 is a control circuit diagram of a switch of an electric vehicle in the prior art.
Fig. 5 is a circuit diagram for preventing the malfunction of the switch in the prior art.
[ notation ] to show
100: impedance processing circuit
200: level adjusting circuit
300: microprocessor
11: closing unit
12: bias unit
60: level adjusting circuit
70: microprocessor
Q1: protective switch
Q2: transistor with a metal gate electrode
D: protective diode
R1: a first resistor
R2: second resistance
R3: third resistance
C1: first capacitor
C2: second capacitor
S: vehicle-mounted switch
R: resistance to ground
V: operating voltage
[ detailed description ] embodiments
Referring to fig. 1, according to an embodiment of the present invention, a protection device for preventing malfunction of a vehicle-mounted switch S due to water inflow is provided, and the protection device includes an impedance processing circuit 100, a level adjustment circuit 200, and a microprocessor 300. The impedance processing circuit 100, the level adjustment circuit 200 and the microprocessor 300 can be integrated into a single controller.
The on-board switch S may be any one of a light switch for controlling a headlight, a horn, and a turn signal, a side stand switch, or a signal switch, and a first end of the on-board switch S receives a working voltage V, which may be directly or indirectly provided by a battery pack inside the electric vehicle, and a second end of the on-board switch S is connected to the impedance processing circuit 100.
The impedance processing circuit 100 includes a protection switch Q1, a turn-off unit 11, and a bias unit 12, wherein the protection switch Q1 is connected between the on-board switch S and ground; the bias unit 12 is connected to the protection switch Q1 for driving the protection switch Q1 to be turned ON (ON); the closing unit 11 is connected to the protection switch Q1 for controlling the protection switch Q1 to be turned OFF (OFF) rapidly.
The level adjustment circuit 200 is connected between the impedance processing circuit 100 and the microprocessor 300, and outputs a corresponding high or low level signal to the microprocessor 300 according to the on/off state of the on-board switch S. The microprocessor 300 can determine whether to drive the components controlled by the vehicle switch S according to the high or low level signal.
In the impedance processing circuit 100, the protection switch Q1 is a metal-oxide-semiconductor field effect transistor (MOSFET) with short-circuit protection or overcurrent protection, and has a gate, a drain and a source, wherein the gate is connected to the bias unit 12 and the turn-off unit 11, the drain is connected to the on-board switch S through a protection diode D, and the source is grounded; the protection diode D is used to prevent the protection switch Q1 from burning out in the reverse power supply state.
The bias unit 12 includes a first resistor R1 and a first capacitor C1 connected in series between the on-board switch S and ground, the series node of which is connected to the gate of the protection switch Q1. The first resistor R1 and the first capacitor C1 connected in series provide a first delay time (RC 1).
The shutdown unit 11 includes a transistor Q2, a second resistor R2, a second capacitor C2, and a third resistor R3. The second resistor R2 and the second capacitor C2 are connected in series between the on-board switch S and ground, the series node is connected to the base of the transistor Q2, and the second resistor R2 and the second capacitor C2 connected in series provide a second delay time (RC2), wherein the second delay time (RC2) is less than the first delay time (RC 1). The collector of the transistor Q2 is connected to the gate of the protection switch Q1, and the emitter of the transistor Q2 is grounded. The third resistor R3 is connected in parallel with the second capacitor C2.
The circuit action of the utility model is explained as follows:
first, referring to fig. 2, when the ON-board switch S is charged with water to generate electrolytic deposits at two ends of the contact point, the impedance of the ON-board switch S is gradually changed and decreased to enable a weak current to pass through the ON-board switch S, the bias circuit 11 generates a gate voltage at the gate of the protection switch Q1 based ON the weak current, and when the gate voltage is increased to turn ON the protection switch Q1, the protection switch Q1 is turned ON (ON) from the original OFF (OFF). Because the protection switch Q1 is composed of MOSFET, the on-resistance between drain and source is very small, so a large current will pass through the on-board switch S at the moment when the protection switch Q1 is turned on, the large current can blow the electrolytic deposits on the on-board switch S, once the electrolytic deposits are blown, the resistance value of the on-board switch S in the open circuit state can be recovered to infinity, and the malfunction of the components, such as LED lamp, controlled by the on-board switch S is avoided.
Referring to fig. 3, when the user operates the ON-board switch S to drive the corresponding component, the ON-board switch S is turned ON (ON) from the original OFF (OFF). Since the second delay time (RC2) of the turn-off unit 11 is less than the first delay time (RC1) of the bias unit 12, when the on-board switch S is turned on, the operating voltage V will generate a base voltage at the base of the transistor Q2 through the second resistor R2 to drive the transistor Q2 to turn on, and the first capacitor C1 in the bias unit 12 will not accumulate enough gate voltage to drive the protection switch Q1. When the transistor Q2 is turned on, the gate voltage of the protection switch Q1 is pulled low, so as to ensure that the protection switch Q1 is in an OFF (OFF) state, thereby preventing the protection switch Q1 from generating a malfunction. Therefore, the closing unit 11 can quickly reduce the gate voltage of the protection switch Q1 when the on-vehicle switch S is turned on, and prevent the protection switch Q1 from being turned on by mistake.
The utility model provides a great resistance of resistance can be selected to first resistance R1, second resistance R2, weakens because of the electrolysis electric current that the problem of intaking produced, reduces the electrolysis effect on this vehicle-mounted switch S. When the on-board switch S is turned on, the power consumption generated by the components in the closing unit 11 may be lower than that generated by a single ground resistor, and the circuit board may not be scalded. Since the protection switch Q1 has the function of short-circuit protection or overcurrent protection, it is not necessary to add a protection circuit thereto.
Claims (10)
1. A protection device for preventing water inlet misoperation of a switch comprises:
a vehicle-mounted switch;
an impedance processing circuit, comprising:
the protection switch is connected with the vehicle-mounted switch and is a metal oxide semiconductor field effect transistor;
the bias unit is connected with the vehicle-mounted switch and the protection switch, and when the vehicle-mounted switch is turned off, the bias unit drives the protection switch to be turned on along with the reduction of the impedance of the vehicle-mounted switch; and
the closing unit is connected with the vehicle-mounted switch and the protection switch, and controls the protection switch to be switched off when the vehicle-mounted switch is switched on;
the level adjusting circuit is connected with the impedance processing circuit and outputs a corresponding high or low level signal according to the state of the vehicle-mounted switch; and
and the microprocessor receives the high or low level signal output by the level adjusting circuit.
2. A protection device for preventing malfunction of switch by water inflow according to claim 1, wherein:
the metal-oxide-semiconductor field effect transistor comprises a grid electrode, a drain electrode and a source electrode, wherein the source electrode is grounded, and the drain electrode is connected with the vehicle-mounted switch;
the bias unit comprises a first resistor and a first capacitor, the first resistor and the first capacitor are connected between the vehicle-mounted switch and the ground in series, and the series node of the first resistor and the first capacitor is connected with the grid;
the closing unit comprises a transistor, a second resistor, a second capacitor and a third resistor, wherein the second resistor and the second capacitor are connected between the vehicle-mounted switch and the ground in series, and the series node of the second resistor and the second capacitor is connected to the base electrode of the transistor; the collector of the transistor is connected with the grid of the metal-oxide semiconductor field effect transistor, and the emitter of the transistor is grounded; the third resistor is connected in parallel with the second capacitor.
3. The protection device of claim 2, wherein the drain of the mosfet is connected to the on-board switch through a protection diode.
4. The protection device of claim 2, wherein the first resistor and the first capacitor provide a first delay time, the second resistor and the second capacitor provide a second delay time, and the second delay time is less than the first delay time.
5. The protection device of claim 2, wherein the protection switch is a mosfet with short circuit protection or overcurrent protection.
6. An impedance processing circuit for preventing water inlet misoperation of a switch is applied to an on-vehicle switch, and comprises:
the protection switch is connected with the vehicle-mounted switch and is a metal oxide semiconductor field effect transistor;
the bias unit is connected with the vehicle-mounted switch and the protection switch, and when the vehicle-mounted switch is turned off, the bias unit drives the protection switch to be turned on along with the reduction of the impedance of the vehicle-mounted switch; and
and the closing unit is connected with the vehicle-mounted switch and the protection switch, and when the vehicle-mounted switch is switched on, the closing unit controls the protection switch to be switched off.
7. The impedance processing circuit for preventing malfunction of switch in water according to claim 6, wherein:
the metal-oxide-semiconductor field effect transistor comprises a grid electrode, a drain electrode and a source electrode, wherein the source electrode is grounded, and the drain electrode is connected with the vehicle-mounted switch;
the bias unit comprises a first resistor and a first capacitor, the first resistor and the first capacitor are connected between the vehicle-mounted switch and the ground in series, and the series node of the first resistor and the first capacitor is connected with the grid;
the closing unit comprises a transistor, a second resistor, a second capacitor and a third resistor, wherein the second resistor and the second capacitor are connected between the vehicle-mounted switch and the ground in series, and the series node of the second resistor and the second capacitor is connected to the base electrode of the transistor; the collector of the transistor is connected with the grid of the metal-oxide semiconductor field effect transistor, and the emitter of the transistor is grounded; the third resistor is connected in parallel with the second capacitor.
8. The impedance processing circuit to prevent switch water ingress malfunction of claim 7, wherein said drain of said mosfet is connected to said onboard switch through a protection diode.
9. The impedance processing circuit of claim 8 wherein the first resistor and the first capacitor provide a first delay time, the second resistor and the second capacitor provide a second delay time, and the second delay time is less than the first delay time.
10. The impedance processing circuit of claim 7 wherein the protection switch is a mosfet with short circuit protection or overcurrent protection.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109213362 | 2020-10-13 | ||
TW109213362U TWM613394U (en) | 2020-10-13 | 2020-10-13 | Protective device and impedance processing circuit for preventing water entry due to switch malfunction |
Publications (1)
Publication Number | Publication Date |
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CN215069717U true CN215069717U (en) | 2021-12-07 |
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CN202121242465.XU Active CN215069717U (en) | 2020-10-13 | 2021-06-04 | Protection device for preventing switch water inlet misoperation and impedance processing circuit |
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CN (1) | CN215069717U (en) |
TW (1) | TWM613394U (en) |
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2020
- 2020-10-13 TW TW109213362U patent/TWM613394U/en unknown
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- 2021-06-04 CN CN202121242465.XU patent/CN215069717U/en active Active
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