CN215067384U - Antireflection film system and optical element - Google Patents

Antireflection film system and optical element Download PDF

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CN215067384U
CN215067384U CN202120509413.8U CN202120509413U CN215067384U CN 215067384 U CN215067384 U CN 215067384U CN 202120509413 U CN202120509413 U CN 202120509413U CN 215067384 U CN215067384 U CN 215067384U
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layer
film
microstructure
film system
light
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蒯泽文
阮高梁
张礼勋
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Zhejiang Sunny Optics Co Ltd
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Zhejiang Sunny Optics Co Ltd
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Abstract

The utility model provides an antireflection coating system and optical element. The anti-reflection film system comprises: a base layer; the transition layer is connected with the substrate layer and comprises at least one first film layer and at least one second film layer, when the first film layer and the second film layer are multiple, the multiple first film layers and the multiple second film layers are alternately superposed, and the refractive index of the first film layer is greater than that of the second film layer; the microstructure layer is arranged on the surface of one side of the transition layer and is connected with the second film layer. The utility model provides an optical element have the high problem of reflectivity among the prior art.

Description

Antireflection film system and optical element
Technical Field
The utility model relates to an optics coating equipment technical field particularly, relates to an antireflection coating system and optical element.
Background
With the continuous change of the mobile phone market, the requirement on the mobile phone camera is higher and higher, wherein the ghost image problem is becoming a focus problem of the market attention. Aiming at the problem that the intensity of some special ghost images is difficult to weaken, improving the spectrum consistency of the central edge of the aspherical lens and reducing the reflectivity spectrum become keys for solving the problem.
That is, the optical element in the related art has a problem of high reflectance.
SUMMERY OF THE UTILITY MODEL
The main object of the present invention is to provide an antireflection film system and an optical element, which can solve the problem of high reflectivity of the optical element in the prior art.
In order to achieve the above object, according to an aspect of the present invention, there is provided an antireflection film system including: a base layer; the transition layer is connected with the substrate layer and comprises at least one first film layer and at least one second film layer, when the first film layer and the second film layer are multiple, the multiple first film layers and the multiple second film layers are alternately superposed, and the refractive index of the first film layer is greater than that of the second film layer; the microstructure layer is arranged on the surface of one side of the transition layer and is connected with the second film layer.
Further, the refractive index of the first film layer is 2 or more and 4 or less.
Further, the refractive index of the second film layer is 1.35 or more and 1.7 or less.
Further, the refractive index of the microstructure layer is 1 or more and 1.25 or less.
Further, the refractive index of the base layer is 1.5 or more and 1.7 or less.
Further, the material of the first film layer comprises Ti oxide and Nb2O5And Ta2O5At least one of (1).
Further, the material of the second film layer comprises SiO2、MgF2、Al2O3At least one of; and/or the material of the substrate layer comprises at least one of EP, APEL, Zeonex, PMMA.
Further, the material of the microstructure layer is alumina; and/or the surface of the microstructure layer has a columnar microstructure.
Further, the transition layer only comprises a high refractive index layer and a low refractive index layer, and the ratio of the thicknesses of the first film layer, the second film layer and the microstructure layer is 4:110: 130.
According to another aspect of the present invention, there is provided an optical element, including: the above anti-reflection film system; the anti-reflection film is at least arranged on at least one side surface of the body.
By applying the technical scheme of the utility model, the antireflection film system comprises a basal layer, a transition layer and a microstructure layer, wherein the transition layer is connected with the basal layer and comprises at least one first film layer and at least one second film layer; the microstructure layer is arranged on the surface of one side of the transition layer and is connected with the second film layer.
Through setting up the transition layer, can effectively reduce the reflection of light for the transmittance greatly increased after the reflection reducing film system is penetrated into to light, and then increased the formation of image quality. The transition layer is arranged into a plurality of first film layers and second film layers with different refractive indexes which are alternately overlapped, so that the reflectivity of the edge of the antireflection film system to light can be reduced, the transmittance of the light is increased, the relative illumination is increased, the vignetting phenomenon is reduced, and the working stability of the optical element is improved. The arrangement of the micro-structural layer greatly reduces the smoothness of the surface of the antireflection film system, thereby increasing the absorption effect of the micro-structural layer on light rays and greatly reducing the reflection effect of the antireflection film system on the light rays. The maximum reflectivity of the antireflection film system to light with the wavelength ranging from 400nm to 1050nm is less than or equal to 1%, so that the light transmittance of the antireflection film system is greatly increased, and the imaging quality of the optical element is ensured. Because the refractive index of the microstructure layer is closer to that of the second film layer, the microstructure layer is connected with the second film layer, light can be ensured to be smoothly incident into the transition layer, and reflection of reflected light is reduced.
Drawings
The accompanying drawings, which form a part of the present application, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 shows a schematic structural view of a reflection reducing film system according to an alternative embodiment of the present invention; and
FIG. 2 is a graph showing wavelength vs. reflectivity for an alternative embodiment of the antireflection film system of the present invention;
fig. 3 shows a schematic diagram of the reflectance of each position of the antireflective film system of an alternative embodiment of the present invention compared with the reflectance of each position of the conventional film system.
Wherein the figures include the following reference numerals:
10. a base layer; 20. a transition layer; 21. a first film layer; 22. a second film layer; 30. a microstructure layer.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
It is noted that, unless otherwise indicated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
In the present application, where the contrary is not intended, the use of directional words such as "upper, lower, top and bottom" is generally with respect to the orientation shown in the drawings, or with respect to the component itself in the vertical, perpendicular or gravitational direction; likewise, for ease of understanding and description, "inner and outer" refer to the inner and outer relative to the profile of the components themselves, but the above directional words are not intended to limit the invention.
In order to solve the problem that the reflectivity of the optical element is high in the prior art, the utility model provides an antireflection film system and an optical element.
As shown in fig. 1 to 3, the antireflection film system includes a substrate layer 10, a transition layer 20 and a microstructure layer 30, wherein the transition layer 20 is connected to the substrate layer 10, the transition layer 20 includes at least one first film layer 21 and at least one second film layer 22, when the first film layer 21 and the second film layer 22 are plural, the plural first film layers 21 and the plural second film layers 22 are alternately stacked, and the refractive index of the first film layer 21 is greater than that of the second film layer 22; the microstructure layer 30 is arranged on one side surface of the transition layer 20, and the microstructure layer 30 is connected with the second film layer 22; wherein the maximum reflectance of the antireflection film to light with a wavelength in the range of 400nm to 1050nm is 1% or less.
Through setting up transition layer 20, can effectively reduce the reflection of light for the transmittance greatly increased after the reflection reducing film system is penetrated into to light, and then increased the formation of image quality. The transition layer 20 is arranged in a manner that the first film layers 21 and the second film layers 22 with different refractive indexes are alternately stacked, so that the reflectivity of the edge of the antireflection film system to light can be reduced, the transmittance of the light is increased, the relative illumination is increased, the vignetting phenomenon is reduced, and the working stability of the optical element is improved. The arrangement of the micro-structure layer 30 greatly reduces the smoothness of the surface of the antireflection film system, thereby increasing the absorption effect of the micro-structure layer 30 on light rays and greatly reducing the reflection effect of the antireflection film system on light rays. The maximum reflectivity of the antireflection film system to light with the wavelength ranging from 400nm to 1050nm is less than or equal to 1%, so that the light transmittance of the antireflection film system is greatly increased, and the imaging quality of the optical element is ensured. Because the refractive index of the microstructure layer 30 is closer to that of the second film layer 22, the microstructure layer 30 is connected with the second film layer 22, so that light can be ensured to be smoothly incident into the transition layer 20, and the reflection of reflected light is reduced.
Alternatively, the refractive index of the first film layer 21 is 2 or more and 4 or less. This arrangement provides a higher refractive index of the first film layer 21, so that light entering the first film layer 21 can be deflected more, and the distribution of light reaching the substrate layer 10 is more uniform.
Specifically, the refractive index of the first film layer 21 may be 2, 2.5, 3, 3.5, 3.8, 4, etc.
Optionally, the refractive index of the second film layer 22 is greater than or equal to 1.35 and less than or equal to 1.7. Set up like this and make certain refractive index difference between second rete 22 and the first rete 21 for light is different at the deflection of second rete 22 and deflection direction and the deflection angle in first rete 21, and then greatly increased the variety of light in subtracting the interior deflection of anti-membrane system, the reflection of the light that has significantly reduced makes the more even of the light distribution that reachs stratum basale 10.
Specifically, the refractive index of the second film layer 22 may be 1.35, 1.4, 1.5, 1.6, 1.65, 1.7.
Alternatively, the refractive index of the microstructure layer 30 is 1 or more and 1.25 or less. The refractive index of the microstructure layer 30 is small, so that light rays in the air can be smoothly emitted into the microstructure layer 30, the reflection of the light is greatly reduced, and the efficiency of emitting the light in the air into the antireflection film system is improved.
Specifically, the refractive index of the microstructure layer 30 may be 1, 1.1, 1.15, 1.2, 1.25.
Alternatively, the refractive index of the base layer 10 is 1.5 or more and 1.7 or less. The arrangement makes the refractive index of the substrate layer 10 relatively close to that of the first film layer 21 and the second film layer 22, so that when light rays enter the substrate layer 10, the generated reflected light is less, and the light transmittance of the substrate layer 10 is ensured.
Specifically, the refractive index of the base layer 10 may be 1.5, 1.55, 1.6, 1.65, 1.7.
Specifically, the material of the first film layer 21 includes Ti oxide, Nb2O5And Ta2O5At least one of (1). The first film layer 21 may be made of Ti oxide, Nb2O5And Ta2O5Of course, the material may be Ti oxide or Nb2O5And Ta2O5Are mixed together. Here, mixing means physical mixing rather than chemical reaction to form a new substance.
Specifically, the material of the second film layer 22 includes SiO2、MgF2、Al2O3At least one of (1). The second film layer 22 may be made of SiO2、MgF2、Al2O3Of course, it may be SiO2、MgF2、Al2O3Are mixed together. It is to be noted thatMixing herein means physical mixing rather than a chemical reaction to form a new substance.
Specifically, the material of the base layer 10 includes at least one of EP, APEL, Zeonex, PMMA. The base layer 10 may be made of one of EP, APEL, Zeonex, and PMMA, or may be formed by mixing several of EP, APEL, Zeonex, and PMMA. Here, mixing means physical mixing rather than chemical reaction to form a new substance.
Specifically, the material of the microstructure layer 30 is alumina.
Specifically, the surface of the microstructure layer 30 has a columnar microstructure. The microstructure is arranged in a columnar shape, so that the surface reflectivity of the microstructure layer 30 can be reduced, and the transmittance of the microstructure layer 30 is greatly increased. The refractive index of the microstructure is greater than 1.1 and equal to or less than 1.25.
As shown in FIG. 2, the maximum reflectance of the antireflection film is 0.2% or less for light having a wavelength in the range of 420nm to 780 nm. Therefore, most of light emitted to the antireflection film system can be absorbed, the antireflection film system has extremely low reflectivity, the reflection of imaging light to an imaging surface of the imaging lens can be effectively reduced, the intensity of stray light is weakened, ghost images are reduced, and the imaging quality is improved.
Optionally, the antireflection film has an average reflectance of 0.1% or less for light having a wavelength in a range of 420nm to 780 nm. Therefore, most of light emitted to the antireflection film system can be absorbed, the antireflection film system has extremely low reflectivity, the reflection of imaging light to an imaging surface of the imaging lens can be effectively reduced, the intensity of stray light is weakened, ghost images are reduced, and the imaging quality is improved.
Optionally, the antireflection film has an average reflectance of 0.3% or less for light having a wavelength in a range of 400nm to 1050 nm. The antireflection film system in the application can be used for reducing the reflectivity of light in a large range to be less than or equal to 0.3%, so that the loss of imaging light is greatly reduced.
Specifically, the transition layer 20 only includes one first film layer 21 and one second film layer 22, and the ratio of the thicknesses of the first film layer 21, the second film layer 22 and the microstructure layer 30 is 4:110: 130. The arrangement can effectively ensure that the anti-reflection film system has good consistency on the reflectivity of light, the spectrum deviation difference of the central edge of the anti-reflection film system is large, meanwhile, because the reflectivity of the anti-reflection film system is low, the reflection of imaging light to the imaging surface of the imaging lens can be effectively reduced, the intensity of stray light is weakened, the intensity of the presented ghost image is low, and the imaging quality is effectively improved.
The optical element comprises the antireflection film system and a body, wherein the antireflection film system is at least arranged on at least one side surface of the body. Therefore, the transmittance of the optical element to light rays can be effectively ensured, the reflectivity of the optical element is greatly reduced, and imaging of the optical element is facilitated.
Optionally, the optical element is a lens.
The method for preparing the film system is used for preparing the anti-reflection film system, and the method for preparing the film system comprises the following steps: preparing a transition layer 20 of the antireflection film system on at least one side surface of the substrate layer 10 of the antireflection film system by electron beam thermal evaporation; the surface of the transition layer 20, which is far away from the substrate layer 10, is provided with a micro-structural layer 30 of an antireflection film system by an atomic layer deposition technology. The preparation of the transition layer 20 by electron beam evaporation can ensure the uniformity of the preparation of the transition layer 20. More microstructures can be formed by adopting the atomic layer deposition technology, so that the light absorption efficiency of the microstructure layer 30 is greatly increased.
Taking a specific example as an example, after the lens is injection molded, a discharging machine is used for loading a special coating jig, then an electron beam thermal evaporation coating machine (PVD) is loaded, after specific parameters such as background vacuum degree, coating temperature and oxygenation flow are set, a titanium pentoxide layer with the thickness of 3-5 nm is coated by utilizing electron beam thermal evaporation, and then a silicon dioxide layer with the thickness of 90-120nm is coated; and then taking out the resin lens, putting the resin lens into a cavity of the atomic layer deposition equipment, setting coating parameters such as a specific reaction source, temperature, speed and the like, and finally coating a third layer of aluminum oxide.
As can be seen from fig. 3, the reflectance of the edge of the antireflection film system of the present application is also low, and the reflectance for light in each wavelength band is also relatively stable.
It is obvious that the above described embodiments are only some of the embodiments of the present invention, and not all of them. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts shall belong to the protection scope of the present invention.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise, and it should be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of features, steps, operations, devices, components, and/or combinations thereof.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. An anti-reflection film system, comprising:
a base layer (10);
a transition layer (20), wherein the transition layer (20) is connected with the substrate layer (10), the transition layer (20) comprises at least one first film layer (21) and at least one second film layer (22), when the first film layer (21) and the second film layer (22) are multiple, a plurality of the first film layers (21) and a plurality of the second film layers (22) are alternately stacked, and the refractive index of the first film layers (21) is greater than that of the second film layers (22);
the microstructure layer (30), the microstructure layer (30) sets up in one side surface of transition layer (20) and microstructure layer (30) and second rete (22) are connected.
2. The antireflection film system according to claim 1, wherein a refractive index of the first film layer (21) is 2 or more and 4 or less.
3. The antireflection film system according to claim 1, wherein a refractive index of the second film layer (22) is 1.35 or more and 1.7 or less.
4. The antireflection film system as claimed in claim 1, wherein a refractive index of the microstructure layer (30) is 1 or more and 1.25 or less.
5. The antireflection film system according to claim 1, wherein a refractive index of the base layer (10) is 1.5 or more and 1.7 or less.
6. Antireflection film system according to any of the claims 1 to 5 characterized in that the material of the first film layer (21) comprises oxides of Ti, Nb2O5And Ta2O5One kind of (1).
7. The antireflection film system according to any one of claims 1 to 5,
the material of the second film layer (22) comprises SiO2、MgF2、Al2O3One of (1); and/or
The material of the substrate layer (10) comprises one of EP, APEL, Zeonex, PMMA.
8. The antireflection film system according to any one of claims 1 to 5,
the microstructure layer (30) is made of aluminum oxide; and/or
The surface of the microstructure layer (30) is provided with a columnar microstructure.
9. The antireflection film system according to any one of claims 1 to 5, characterized in that the transition layer (20) comprises only one first film layer (21) and one second film layer (22), the ratio of the thicknesses of the first film layer (21), the second film layer (22) and the microstructure layer (30) being 4:110: 130.
10. An optical element, comprising:
the anti-reflection film system according to any one of claims 1 to 9;
the anti-reflection film system is at least arranged on at least one side surface of the body.
CN202120509413.8U 2021-03-10 2021-03-10 Antireflection film system and optical element Active CN215067384U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113009601A (en) * 2021-03-10 2021-06-22 浙江舜宇光学有限公司 Antireflection film system, optical element, and method for producing film system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113009601A (en) * 2021-03-10 2021-06-22 浙江舜宇光学有限公司 Antireflection film system, optical element, and method for producing film system
CN113009601B (en) * 2021-03-10 2023-02-24 浙江舜宇光学有限公司 Antireflection film system, optical element, and method for producing film system

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