CN214909042U

CN214909042U - Semiconductor refrigeration structure and beauty instrument

Info

Publication number: CN214909042U
Application number: CN202120922113.2U
Authority: CN
Inventors: 李兵
Original assignee: Shenzhen Yuyi Electronic Technology Co Ltd
Current assignee: Shenzhen Yuyi Electronic Technology Co Ltd
Priority date: 2021-04-24
Filing date: 2021-04-29
Publication date: 2021-11-30
Anticipated expiration: 2031-04-29
Also published as: CN215821349U; CN214908019U

Abstract

The utility model relates to a semiconductor refrigeration structure and beauty instrument. The semiconductor refrigeration structure comprises a PN galvanic couple layer, and a hot surface and a cold surface at two ends of the PN galvanic couple layer, wherein the PN galvanic couple layer comprises a plurality of galvanic couple pairs formed by connecting P-type and N-type semiconductor particles; the hot surface is formed by a heat pipe, a VC heat pipe or a VC heat conduction plate, the surface of the heat pipe, the VC heat pipe or the VC heat conduction plate forms a hot end circuit which is electrically connected with the hot end of the couple pair of the PN couple layer; the heat pipe or the VC heat conduction pipe or the inner space of the VC heat conduction plate contains a refrigerant. The semiconductor refrigeration structure is arranged at the head of the beauty instrument and used for refrigerating a working surface or directly using a cold surface as the working surface.

Description

Semiconductor refrigeration structure and beauty instrument

Technical Field

The utility model relates to a semiconductor refrigeration technology and application thereof, especially a semiconductor refrigeration structure and beauty instrument.

Background

The semiconductor refrigeration structure in the prior art comprises a PN galvanic couple layer formed by connecting P-type particles and N-type particles, and a substrate connected with the hot end and the cold end of the PN galvanic couple layer, wherein the hot surface and the cold surface of the semiconductor refrigeration structure are correspondingly formed, and the hot surface substrate is connected with a radiator for heat radiation (air-cooled heat radiation or water-cooled heat radiation). How to make the heat dissipation efficiency of the semiconductor refrigeration structure higher, the refrigeration effect better, the structure is simpler, is the technological problem in this field. As one of the applications of semiconductor refrigeration structures, as a cold application of a beauty instrument to the skin, for example for a depilator, to cool a working head. The working head of the existing depilatory instrument on the market can not form an ice compress effect, and the light source assembly in the depilatory instrument and the air inlet on the front side of the radiator carry out air cooling heat dissipation, so that the heat dissipation is slow, the cooling effect is poor, the experience feeling is poor, and the depilatory efficiency and the depilatory effect are influenced; but also can cause the formation of water mist or water drops, which can damage the control circuit board.

SUMMERY OF THE UTILITY MODEL

A primary object of the present invention is to provide a semiconductor refrigeration structure to improve refrigeration efficiency and heat dissipation efficiency.

Another object of the present invention is to provide a cosmetic apparatus, which solves the problem of poor cooling effect of the working head of the existing cosmetic apparatus.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a semiconductor refrigeration structure comprises a PN galvanic couple layer, and a hot surface and a cold surface at two ends of the PN galvanic couple layer, wherein the PN galvanic couple layer comprises a plurality of pairs of galvanic couple formed by connecting P-type and N-type semiconductor particles; the hot surface is formed by a heat pipe, a VC heat pipe or a VC heat conduction plate, and the surface of the heat pipe, the VC heat pipe or the VC heat conduction plate is formed into a hot end circuit which is electrically connected with the hot end of the couple pair; the heat pipe or the VC heat conduction pipe or the inner space of the VC heat conduction plate contains a refrigerant.

Furthermore, the semiconductor refrigeration structure comprises a radiator, and the heat pipe or the VC heat conduction plate is combined with the radiator for radiating; the radiator comprises a plurality of radiating fins; the heat pipe penetrates into the plurality of radiating fins for radiating.

Furthermore, the VC heat conduction pipe or the VC heat conduction plate is connected with one or more heat pipes, and the VC heat conduction pipe or the VC heat conduction plate is communicated with the inner space of the heat pipes to form a closed space of the refrigerant; the heat pipe penetrates the plurality of radiating fins for radiating.

Further, the cold surface forms a cold end circuit which is electrically connected with the cold end of the couple pair; the couple pair of the PN couple layer is formed by connecting the hot end circuit and the cold end circuit in series; the hot side is provided with an insulating film and the hot end circuit; the hot end circuit and the cold end circuit are metal conductors; and the hot surface and the cold surface are respectively welded to the hot end and the cold end of the couple pair of the PN couple layer.

As some embodiments, the cold surface is connected with a hot surface formed by a plurality of groups of PN galvanic couple layers and heat pipes or VC heat conducting plates, and the hot surfaces formed by the plurality of heat pipes or VC heat conducting plates are respectively welded and electrically connected with the hot ends of the plurality of PN galvanic couple layers; the multiple PN galvanic couple layers and the hot surfaces are respectively arranged on multiple sides of the cold surface. And a group of independent cold end circuits are respectively arranged on multiple sides of the cold surface, and the cold end circuits and the hot end circuits on the hot surface arranged on the surface are used for connecting the galvanic couples in the PN galvanic couple layer in series.

In some embodiments, the cold surface of the semiconductor refrigeration structure is used as a working surface of a beauty instrument contacted with the skin or used for refrigerating the working surface so as to pre-cool the skin contacted with the working surface or form an ice compress effect; when the cold side of the semiconductor refrigeration structure is used as the working side, the cold side is provided with a light transmitting area for pulse light transmission. The shape and size of a section of heat pipe or VC heat conduction plate used as the hot surface are matched with the PN galvanic couple layer and the cold surface.

In some embodiments, the cold face is comprised of an entire face of a transparent crystal and serves directly as the working face, the light transmissive region being provided by the transparent crystal. In other embodiments, the hot surface is a bent or annular or linear heat pipe or a VC heat conducting plate, the cold surface and the PN couple layer are in a matched shape, and the cold surface, the PN couple layer and the hot surface are connected to define a light transmission region for pulsed light transmission. In other embodiments, the cold side, the PN couple layer, and the hot side are connected without a light-transmissive region, and the one or more semiconductor cooling structures are disposed around the perimeter of the working side.

In some embodiments, the VC heat pipe or the VC heat conducting plate is made of copper or aluminum, and is fastened by two parts of the shell, a refrigerant is placed in the internal space, and the internal space is vacuumized and sintered to form a closed space; the VC heat conduction pipe or the VC heat conduction plate is directly used as a hot surface, the wall directly conducts heat of a hot end of the PN semiconductor couple layer, the internal refrigerant is evaporated and flows to the condensing section to be condensed into liquid, and the heat is exchanged and returns to the evaporating section from the liquid; the condensing section is an extended VC heat conduction pipe or VC heat conduction plate, and the combined radiator radiates heat outwards; or the VC heat conduction pipe or the VC heat conduction plate is connected with the heat pipe, the heat pipe is combined with the radiator to radiate heat outwards, and the heat pipe is communicated with the VC heat conduction pipe or the VC heat conduction plate to form an integral closed space.

The utility model also provides a beauty instrument, which comprises a main machine body, and a light source component, a power supply unit and a control circuit board which are arranged in the main machine body, wherein the front end of the beauty instrument is provided with a working surface which is contacted with the skin; the beauty instrument is provided with the semiconductor refrigeration structure; the cold surface of the semiconductor refrigeration structure is used for refrigerating the working surface in contact with the skin or directly used as the working surface in contact with the skin to pre-cool or cold compress the skin in contact with the working surface.

In some embodiments, the beauty instrument takes the hair removal instrument as a main body; the shell is provided with an air inlet and an air outlet, and a fan is arranged in the shell; the air path among the radiator, the fan and the air outlet which are connected with the hot surface of the air inlet and the semiconductor refrigeration structure is communicated, so that air-cooling heat dissipation is realized. The beauty instrument controls the power supply unit to excite the light source assembly to generate pulsed light through the control circuit board, and the pulsed light generated by the light source assembly is transmitted out of the working face to perform beauty treatment on skin contacted with the working face. The working surface is refrigerated by the semiconductor refrigeration structure, the cold surface, the PN galvanic couple layer and the hot surface of the semiconductor refrigeration structure are connected together to form an annular whole, a hollow area in the annular shape forms a light transmission area for transmitting pulse light generated by a light source component, the annular shape is attached to the periphery of the working surface, and the cold surface refrigerates the working surface; or the cold surface is used as the working surface and is a transparent crystal; or the working surface is refrigerated by a plurality of semiconductor refrigeration structures, the semiconductor refrigeration structures are distributed around the working surface, and the cold surface is attached to the periphery of the working surface.

The utility model has the advantages that:

the utility model discloses a semiconductor refrigeration structure adopts heat pipe or VC heat-conducting plate directly as the hot side of semiconductor refrigeration structure, saves intermediate links such as heat conduction silicone grease layer between hot side base plate, base plate and the heat pipe, makes the hot junction of PN galvanic couple layer produce direct conduction of heat to heat pipe or VC heat-conducting plate, and radiating efficiency and refrigeration efficiency all show the improvement.

The semiconductor refrigeration structure is used for refrigeration of the working head of a beauty instrument such as a depilator, and has good refrigeration effect on the working surface and good customer experience; and the heat dissipation efficiency is high, so that the depilating efficiency of the beauty instrument is higher.

The present invention will be described in further detail with reference to the accompanying drawings.

Drawings

Fig. 1 is a perspective view of a semiconductor refrigeration structure according to a first embodiment of the present invention.

Fig. 2 is an exploded view of the semiconductor refrigeration structure according to the first embodiment of the present invention.

Fig. 3 is a schematic diagram of an internal structure of an embodiment of the semiconductor refrigeration structure of the present invention.

Fig. 4 is another schematic diagram of the internal structure of an embodiment of the semiconductor refrigeration structure of the present invention.

Fig. 5 is a perspective view of a semiconductor refrigeration structure according to a second embodiment of the present invention.

Fig. 6 is a perspective view of a semiconductor refrigeration structure according to a third embodiment of the present invention.

Fig. 7 is a perspective view of a semiconductor refrigeration structure according to a fourth embodiment of the present invention.

Fig. 8 is a perspective view of the hair removal device according to the embodiment of the present invention.

Fig. 9 is an internal structure view of the hair removal device according to the embodiment of the present invention.

Fig. 10 is an exploded view of a depilating apparatus in accordance with an embodiment of the present invention.

Fig. 11 is a perspective view of a semiconductor refrigeration structure according to a fifth embodiment of the present invention.

Fig. 12 is a schematic view of the structure of the superconducting pipe after cutting along the line AA in the drawing.

Fig. 13 is a schematic sectional view of a superconducting pipe according to an embodiment of the present invention.

Fig. 14 is a perspective view of a semiconductor refrigeration structure according to a sixth embodiment of the present invention.

Detailed Description

It should be noted that, in the present invention, features of various embodiments and embodiments can be combined with each other without conflict, and the present invention is further described in detail with reference to the accompanying drawings and specific embodiments.

Referring to fig. 1-14, the present invention relates to a semiconductor cooling structure 10 and a cosmetic apparatus 100 using the same, wherein the semiconductor cooling structure 10 is used for cooling a working surface of the cosmetic apparatus. The semiconductor refrigeration structure 10 comprises a PN galvanic couple layer 3 and a cold end substrate 1 connected with the cold end of the PN galvanic couple layer, and the PN galvanic couple layer comprises a plurality of P-type and N-type semiconductor particles. The semiconductor refrigeration structure 10 further comprises a hollow metal substrate 2, wherein a hot-end circuit 21 is formed on the surface of the hollow metal substrate 2, electrically connected with the hot ends of the P-type and N-type semiconductor particles, and directly welded with the hot ends of the P-type and N-type semiconductor particles. The hollow metal substrate 2 has an inner space formed inside the hollow metal substrate and contains a refrigerating medium, and heat at the hot end of the P-type and N-type semiconductor particles is directly conducted through the hollow metal substrate 2 and is dissipated by the refrigerating medium in the inner space of the hollow metal substrate. The utility model discloses in, cavity metal substrate 2 directly as the hot side of semiconductor refrigeration structure, directly absorbs and conducts the heat in hot junction.

In a particular embodiment, the refrigeration medium is a liquid refrigerant; the inner space of the hollow metal substrate 2 is formed with a capillary structure, and the liquid refrigerant is subjected to phase change through the capillary structure to release heat, so that heat at the hot end is rapidly conducted out to dissipate heat. The hollow metal substrate can be a heat pipe, a VC heat conduction plate or a superconducting pipe. In the following embodiments, the hollow metal substrate, the hot side substrate, and the hot side are all denoted by reference numeral 2 for convenience of description. The cold side and cold side substrates are both denoted by reference numeral 1.

Referring to fig. 1-4, as an embodiment, the hollow metal substrate/hot side substrate of the semiconductor cooling structure 10 is formed by a heat pipe 20. Wherein the front end of the heat pipe 20 is bent to form a hot surface 2 as a hot surface/hot end substrate 2 of the PN galvanic couple layer 3. The semiconductor refrigeration structure 10 includes a PN galvanic couple layer 3 formed by connecting several pairs of galvanic couples 30 formed by P-type and N-type semiconductor particles in series, a cold surface (i.e., a cold end substrate) 1 at the cold end of the PN galvanic couple layer 3, and a heat pipe 20. The hot side 2 is a section of the wall of the heat pipe 20, more specifically, a section of the wall of the evaporation section of the heat pipe. The utility model discloses a semiconductor refrigeration structure 10, the pipe wall that directly adopts the heat pipe is as semiconductor refrigeration structure's hot side, the PN galvanic couple switches on the back to 30 series connection and circuit, the heat direct conduction that the hot junction produced gives the pipe wall of heat pipe, and then the liquid refrigerant that conducts to inside makes the liquid refrigerant evaporation, the liquid refrigerant flow direction condensation section of evaporation takes place the condensation of phase change heat exchange back condensation and becomes liquid and return the evaporation zone, phase change release heat, thereby can be fast with the heat derivation heat dissipation that the PN galvanic couple produced to the hot junction of 30, it is better to make cold junction refrigeration speed faster and refrigeration effect.

The inner side surface of the hot surface 2 is formed with a hot end circuit 21 which is electrically connected with the heating end (i.e. the hot end) of the PN couple pair 30, and meanwhile, the hot surface 2 and the hot end of the PN couple pair 30 are welded and fixed. The inner side surface of the cold surface 1 is formed with a cold end circuit 11 which is electrically connected with the low temperature end (i.e. cold end) of the PN couple pair 30, and meanwhile, the cold surface 1 and the cold end of the PN couple pair 30 are welded and fixed. The cold-side circuit 11 and the hot-side circuit 21 connect PN couple pairs 30 in the PN couple layer 3 in series, connect PN couple particles in series to form a semiconductor refrigeration circuit, and are electrically connected to an external circuit by positive and negative electrodes (see fig. 3).

The PN galvanic couple layer 3 is formed by electrically connecting P type/N type semiconductor particles by metal conductors (cold end circuit 11/hot end circuit 21), and by utilizing the Peltier effect of semiconductor materials, when direct current passes through a galvanic couple formed by connecting N, P two different semiconductor materials in series, heat transfer can be generated between two ends, the heat can be transferred from one end to the other end, so that temperature difference is generated to form a cold end and a hot end, wherein the low temperature end is a cold end, and the high temperature end is a hot end.

In some embodiments, the P-type/N-type semiconductor particles in the PN galvanic couple layer 3 can be directly arranged in a granular shape according to a predetermined circuit, and directly welded on the cold surface 1 and the hot surface 2 of the semiconductor refrigeration structure, so as to form a sandwich structure between the cold surface 1 and the hot surface 2 of the semiconductor refrigeration structure. During assembly, one end of the P-type semiconductor particles or the N-type semiconductor particles may be first soldered to one of the cold side 1 or the hot side 2, for example, the P-type/N-type semiconductor particles may be soldered and fixed by soldering the P-type/N-type semiconductor particles to the hot side, and then the cold side 1 may be soldered to the other end of the P-type/N-type semiconductor particles, thereby forming the semiconductor refrigeration structure. In other embodiments, the P-type/N-type semiconductor particles may be fixed into a whole structure with a predetermined shape, such as a ring or a bar or other shapes, and both ends of the P-type/N-type semiconductor particles are respectively soldered and electrically connected to the metal conductors (circuits) on the cold surface 1 and the hot surface 2, so as to connect the PN couple pairs 30 in series.

The cold-end circuit 11 and the hot-end circuit 21, such as the square or rectangular conductive blocks (or metal conductors) shown in fig. 3, are consistent with the arrangement of the PN couple pairs 30 in the PN couple layer 3, and are respectively metalized on the surfaces of the cold surface 1 and the hot surface 2 to form circuits, and the cold end and the hot end of the P-type/N-type semiconductor particles are respectively welded and fixed with the cold surface 1 and the hot surface 2 by adopting an electroplating or etching process or a method of printing or coating metal powder/metal paste such as tin paste.

The heat pipe 20 is a metal pipe, typically a copper pipe, and has a capillary structure formed therein, and the capillary structure may be formed of copper powder, a copper mesh, or other porous materials. The heat pipe comprises an evaporation section and a condensation section, wherein a hot surface 2 is formed on the evaporation section of the heat pipe 20, when a hot-side circuit 21 is formed, an insulating film 22 is firstly formed on the wall surface of the hot surface 2, namely the evaporation section, through printing or spraying or other methods so as to form insulating protection on the metal wall surface, and further, a conductive layer such as a copper-platinum layer is formed on the wall surface covered with the insulating film 22 through an etching process or other metallization methods so as to form the hot-side circuit, so that the circuit layout of the hot surface is consistent. A rectangular conductive block 21 as shown in fig. 3 is formed on the wall surface, i.e., the hot face, of the heat pipe 20 by an etching process for welding and connecting PN galvanic couples in series.

The shape and size of the heat pipe 20 and the curved hot side 2 at the front end are configured according to the specific application, for example, the front end is bent or formed into a ring shape, and the condensation section of the rear end heat pipe can be a straight pipe structure. The condensation section can be connected with a radiator to perform air cooling heat dissipation, and can also perform water cooling heat dissipation, in this embodiment, the heat dissipation is performed through a radiator 4, and the radiator 4 includes a plurality of cooling fins 40. The plurality of fins 40 may be integrally formed with or assembled into a unitary body with the heat pipe. The heat pipe penetrates into each radiating fin 40, the heat of the heat pipe 20 is quickly radiated through the radiator 4, so that the liquid refrigerant in the pipe is condensed, and the condensed refrigerant flows back to the evaporation section through the capillary action of the capillary structure.

The cold side 1 of the semiconductor refrigeration structure 10 may be a transparent crystal, a ceramic chip, a copper sheet or other semiconductor substrate.

The semiconductor refrigeration structure 10 of the present invention is mainly used for cooling the working head of the beauty instrument, and is especially used for cooling the working surface in contact with the skin or directly cooling the working surface 1 as the beauty instrument, and the working surface is in contact with the skin to form a pre-cooling or ice compress effect on the skin.

When the beauty instrument has the IPL pulse light depilation function, as an embodiment, the whole depilation working surface is refrigerated by one semiconductor refrigeration structure 10 or the cold surface is directly used as the working surface, the cold surface 1, the hot surface 2 and the PN galvanic couple layer 3 of the semiconductor refrigeration structure 10 are fixed together to jointly define a light transmission area, and more specifically, the cold surface 1 comprises a light transmission area 12 for transmitting IPL pulse light generated by a lamp tube inside the IPL pulse light depilation instrument to depilation the skin surface contacted with the outer surface of the cold surface 1. Examples of the light-transmitting area 12 of the cold side 1 include, but are not limited to: when the cold face 1 is a transparent crystal, the light-transmitting area 12 is a part of the whole transparent crystal cold face 1; alternatively, the cold face 1 is annular, defining a hollow region as the light transmitting region 12. The arrangement of the hot side 2 may be: the hot surface 2 is annular, the P-type/N-type semiconductor particles in the PN galvanic couple layer 3 are arranged annularly, and the annular areas of the hot surface and the PN galvanic couple layer correspond to the light transmission area of the cold surface for IPL pulse light to pass through; alternatively, the hot surface 2 and the PN couple layer 3 are fixed to one side of the cold surface 1, for example, to the upper, lower, left, and right edges of the transparent crystal, and the other pair of opposing surfaces of the cold surface 1 form the light-transmitting region 12.

In other embodiments, a plurality of semiconductor cooling structures 10 are distributed around the periphery of the epilation/cosmetic work surface, each semiconductor cooling structure 10 independently performing localized cooling of the work surface.

As an example, referring to fig. 3, the semiconductor refrigeration structure 10 uses a transparent crystal as the cold side 1 directly and at the same time serves as the working side of the skin contact side of the beauty instrument. The heat pipe 20 is used as the hot surface 2 of the semiconductor refrigeration structure 10 and conducts heat at the high-temperature end (hot end) of the PN galvanic couple layer 3 to perform rapid heat dissipation.

The semiconductor refrigeration structure 10 of the present embodiment includes a cold side 1, a PN electric double layer 3 formed by electrically connecting P-type/N-type semiconductor particles by a metal conductor (conductive block), a heat pipe 20, and a heat sink 4. Wherein, a section of pipe wall of the heat pipe 20 is used as a hot surface 2 of the hot end of the PN galvanic couple layer 3; the heat sink 4 is connected to one end of the heat pipe 20, the end (or condensation section) farther from the hot face 2. The PN galvanic couple layer 3 is located between the cold face 1 and the hot face 2. The cold surface 1 of the semiconductor refrigeration structure is formed by transparent crystals to form a transparent crystal cold surface; the transparent crystal cold surface 1 and the metal conductor on the inner side surface of the heat pipe 20 are fixedly connected with the PN galvanic couple layer 3. The transparent crystal is a transparent material with high light transmittance, high thermal conductivity and high heat resistance, such as natural spar or gem. The metal conductor can form a semiconductor refrigeration circuit by connecting P/N type semiconductor particles in series through a hot end circuit 21 and a cold end circuit 11 which are formed on a hot side and a cold side through a metallization process.

In one embodiment, the PN couple layer 3 is ring-shaped or P/N type semiconductor particles are arranged in a ring shape, and the inner hollow region is used for light to emit. The tube wall of the heat pipe 20/VC heat conduction tube or VC heat conduction plate is used as the hot surface 2 of the semiconductor refrigeration structure, and the tube wall is metallized to form a hot end circuit (or metal conductor) 21; a cold end circuit (or a metal conductor) 11 is formed on the cold surface of the transparent crystal; the cold end circuit 11 and the hot end circuit 21 are respectively and electrically connected with two ends of the P type/N type semiconductor particles to form a series circuit, and the positive electrode and the negative electrode are connected with an external power supply. During welding, the P-type semiconductor particles and the N-type semiconductor particles can be welded twice, and when the P-type semiconductor particles are loaded, the positions of the N-type semiconductor particles are shielded by the tool fixture. The shape and size of the hot surface 2 formed by the heat pipe/VC heat conduction pipe or the VC heat conduction plate are matched with those of the PN galvanic couple layer 3 or the cold surface 1, for example, the hot surface is annular, the annular area is used as a heat dissipation surface, and the middle hollow area is used for injecting IPL pulse light. The ring shape of the hot surface is attached to the ring shape of the PN galvanic couple layer 3 in a matching way, so that the rapid heat dissipation is facilitated. The transparent crystal cold surface 1 covers the whole surface of the PN galvanic couple layer 3, so that whole surface refrigeration is formed. The transparent crystal cold face 1 is a whole or a whole crystal. The transparent crystal material has high light transmittance and high heat conductivity coefficient, so that pulsed light is transmitted from the transparent crystal to perform unhairing operation, and the high heat conductivity coefficient is favorable for improving the refrigeration efficiency and effect. The middle area of the transparent crystal cold surface 1 is a light transmission area 12, and the peripheral annular area is attached to the PN galvanic couple layer 3 in a matching manner.

In another embodiment, referring to fig. 5, the semiconductor refrigeration structure 10 of the present embodiment includes a cold side 1, a PN electrical couple layer 3 formed by electrically connecting P-type/N-type semiconductor particles with hot and cold side metal conductors (hot side circuit/cold side circuit), a VC heat pipe (hot side) 2, a heat pipe 20, and a heat sink 4. The hot side 2 of the semiconductor refrigeration structure 10 is a tube wall of a VC heat pipe, which may be made of copper/aluminum or other metal heat conducting materials, and the VC heat pipe may be in a ring shape or any bent shape, or in a straight tube structure, and the tube wall forms the hot side 2 and the surface forms a hot side circuit of semiconductor particles. The two heat pipes 20 are connected to the VC heat pipes 2, conduct heat of the VC heat pipes 2, and are connected to the radiator 4 to radiate the heat. VC heat pipe 2 has a closed space formed therein, contains copper powder and a liquid refrigerant, and communicates with the space inside heat pipe 20, and the insides thereof together form a closed space containing a liquid refrigerant. The VC heat conduction pipe (hot surface) 2 is directly used as the hot end of the semiconductor refrigeration structure, is communicated with the heat pipe 20, and is connected with the radiator 4 through the heat pipe 20 for heat radiation. It will be appreciated that the VC heat pipes may also be directly connected to the heat sink 4. The VC heat conduction pipe (hot surface) 2 is in direct contact with the hot end of the P/N semiconductor particles for heat conduction, the heat dissipation efficiency is high, the loss is small, an intermediate link is omitted, and the heat conduction speed is accelerated. In this embodiment, the VC heat pipes (hot surfaces) 2 are annular, one end of the one or more heat pipes 20 is connected to the VC heat pipes (hot surfaces) 2 and is internally connected, and the other end is connected to the heat sink 4 to dissipate heat quickly.

The VC heat conducting plate is similar to the VC heat conducting plate as a hot surface, the interior of the VC heat conducting plate is a hollow closed space, copper powder and liquid refrigerant are contained, the VC heat conducting plate is designed into a plate shape according to the shapes of the cold surface 1 and the PN galvanic couple layer 3, and a maximum heat conducting surface is formed at the hot end of the PN galvanic couple layer 3.

Referring to fig. 6-7, in other embodiments, the semiconductor refrigeration structure 10 includes a PN galvanic couple layer 3 and a hot face 2 and a cold face 1 at both ends of the PN galvanic couple layer. The cold side 1 is made of transparent crystals to form a transparent crystal cold side. One or more groups of PN galvanic couple layers 3 and heat pipes 20 (also can be VC heat conduction pipes/VC heat conduction plates) fixedly connected with the PN galvanic couple layers are fixedly connected to the surface of the transparent crystal, and one section of pipe wall of each heat pipe 20 (or VC heat conduction pipes/VC heat conduction plates) is used as a hot surface 2. The semiconductor refrigeration structure has a light transmissive region formed from the transparent crystal.

The one or more PN galvanic couple layers 3 and the hot surface 2 fixedly connected with the PN galvanic couple layers are arranged on one side, two opposite sides or multiple sides of the transparent crystal. The cold side 1 of the semiconductor refrigeration structure 10 is a square (not limited to square) transparent crystal, and one or more sides of the transparent crystal, such as the upper and lower (or left and right) surfaces, are respectively provided with a group of PN electric coupling layers 3 and a hot side 2 (heat pipe 20/VC heat pipe or VC heat conducting plate) fixedly connected with the PN electric coupling layers 3. Two other pairs of surfaces of the transparent crystal, such as the front and back (or upper and lower) surfaces, may be used as light transmissive regions 12 for pulsed light transmission for hair removal or other cosmetic treatment. The heat pipe 20/VC heat pipe or VC heat plate (hot side) 2 and the hot side 2 are the same as the above embodiment.

In the semiconductor refrigeration structure 10 shown in fig. 6, the upper and lower surfaces of the transparent crystal cold surface 1 are respectively connected with a heat pipe 20, the front end of each heat pipe 20 is bent to form a hot surface 2, the surface of the hot surface 2 forms a hot end circuit 21, the hot end circuit is welded, fixed and electrically connected with the hot end of the PN semiconductor couple layer 3, and each group of the hot surface 2 and the PN semiconductor couple layer 3 (or the P-type/N-type semiconductor particles arranged inside the same) is matched with the surface shape and size of the corresponding side of the transparent crystal cold surface 1. The heat pipe 20 has a heat sink 4 mounted at one or both ends thereof. The cold surface 1 is connected with a plurality of PN galvanic couple layers 3 and a hot surface 2 formed by a plurality of heat pipes/VC heat conduction plates, and a plurality of independent hot end circuits are respectively arranged on the hot surfaces formed by the plurality of heat pipes/VC heat conduction plates and are respectively welded and electrically connected with the hot ends of the PN galvanic couple layers 3. A plurality of groups of PN galvanic couple layers 3 and hot surfaces are welded on the multi-side surfaces of the cold surface; and a group of independent cold end circuits are respectively arranged on multiple sides of the cold surface, and form a series circuit with the hot end circuit of the hot surface arranged on the side surface and the galvanic couple pairs in the corresponding PN galvanic couple layers.

In the semiconductor refrigeration structure 10 shown in fig. 7, a heat pipe 20 is disposed on the upper surface of the transparent crystal cold surface 1, the heat pipe 20 is U-shaped as a whole, the middle U-shaped is bent to form a hot surface 2, a hot-side circuit 21 is formed on the surface of the hot surface 2, and is welded, fixed and electrically connected to a PN semiconductor couple layer 3, and the hot surface 2 and the PN semiconductor couple layer 3 (or the P-type/N-type semiconductor particles therein are arranged) have the same shape and size as the side surface of the transparent crystal cold surface 1. Both ends of the heat pipe 20 are mounted on the surface or inside of the heat sink 4. The heat pipe 20 is directly connected with the hot end of the P type/N type semiconductor particles, so that an intermediate link is omitted, heat is directly conducted, and the heat dissipation efficiency is higher.

It will be appreciated that the hot side 2 in fig. 6-7 may also be formed by a VC heat pipe or VC heat conducting plate in the form of a strip or other shape matching the shape and size of the cold side 1/PN galvanic couple layer 3. The VC heat pipe or the VC heat conducting plate 2 is connected with one or more heat pipes 20, and the internal liquid refrigerants are communicated with each other and connected with the radiator 4 through the heat pipes. The surface of the VC heat conduction pipe or the VC heat conduction plate is directly used as a hot surface to form a hot end circuit which is electrically connected and welded with the hot end of the P-type/N-type semiconductor particles. The cold face 1 may be a transparent crystal, and may be annular or non-annular.

The hot surface 2 is directly formed by a heat pipe or a VC heat conduction plate, the surface is metallized to form a hot end circuit 21, a cold end circuit 11 is formed on the cold surface 1, two ends of P type/N type semiconductor particles of a PN semiconductor galvanic couple layer 3 are respectively welded on the cold surface 1 and the hot surface 2 and are electrically connected by the cold end circuit 11 and the hot end circuit 21 to form a series circuit, and two ends of the circuit are respectively connected by a positive electrode and a negative electrode. The VC heat pipe or the VC heat conducting plate can be further connected with a heat pipe, and the heat pipe is connected with the radiator 4. The VC (vapor chambers) heat conduction pipe or the VC heat conduction plate can adopt metal heat conduction materials such as copper/aluminum and the like, and is buckled together by two parts of shells, and the shells are sintered after being vacuumized to form a closed space inside. The inner space forms a capillary structure and contains liquid refrigerant, and the capillary structure can be formed by copper powder and/or copper net or other porous materials. The VC heat conduction pipe or the VC heat conduction plate is directly used as a hot surface 2, the heat of the hot end of the PN semiconductor couple layer 3 is directly conducted by the wall surface and the copper powder in the VC heat conduction plate, the liquid refrigerant in the inner space flows to the condensation section after being evaporated to be condensed into liquid, the liquid refrigerant returns to the evaporation section through capillary action, the heat is released after phase change, and the heat is conducted outwards and dissipated by the radiator 4. The condensation section can be an extended VC heat conduction pipe or a part of the VC heat conduction plate, and the combined radiator 4 radiates heat outwards; or, the VC heat pipes or the VC heat conducting plates are connected to heat pipes (see fig. 4-5), the heat pipes 20 are combined with the heat sink 4 to dissipate heat outwards, and the heat pipes 20 are communicated with the inside of the VC heat pipes or the VC heat conducting plates (hot faces) 2 to form an integral closed space.

Referring to fig. 8-10, the present invention provides a beauty treatment apparatus, which generally uses a depilation apparatus as a main body and has a beauty treatment effect of depilation treatment. The beauty instrument of the present invention is illustrated as a hair removal device, and is designated by reference numeral 100, and includes a housing 8, and a semiconductor cooling structure 10, a control circuit board 5, a light source assembly 6, a power supply unit 7, and a fan 9 provided in the housing 8. The front end surface of the beauty instrument 100 is a working surface and can be in direct contact with the skin to perform beauty treatment on the contacted skin. The control circuit board 5 is electrically connected with the light source assembly 6 and the power supply unit 7 to control the light source to generate pulsed light for depilation or cosmetic work. The power supply unit 7 is used to supply power to the light source assembly 6. The working head of the depilating apparatus 100 is provided with a semiconductor refrigeration structure 10, and the cold surface 1 of the depilating apparatus is used for refrigerating the working surface or directly used as the working surface, so that precooling and icing on the skin are formed, and heat inside the main body of the depilating apparatus can be dissipated in time. The control circuit board 5 controls the power supply unit 7 to start the light source assembly 6 to work to generate pulsed light. The housing 8 is provided with an air inlet 80 and an air outlet 81. The epilating apparatus 100 may also be provided with a power cord and/or a charging interface for connection with an external power source.

The semiconductor refrigeration structure 10 adopts the structure described in the above embodiment, and is clamped and fixed by the housing of the working head of the main body for depilation, the cold surface 1 can be directly used as the working surface of the main body for depilation and contact with the skin, and the cold surface 1 has the light transmission area 12 for transmitting the IPL pulse light generated by the light source assembly 6 and then carrying out depilation or other beauty treatment on the contacted skin surface; or the cold surface 1 is used for refrigerating the working surface and is attached to the inner side surface of the working surface, the cold surface 1 and the working surface are both provided with light transmission areas, and IPL pulse light generated by the light source assembly 6 is transmitted and then depilated or other beauty work is carried out on the contacted skin surface; or, a plurality of semiconductor refrigeration structures 10 are distributed on the edge of the light-transmitting area of the working surface to refrigerate the working surface from the periphery. As a preferred embodiment, the semiconductor refrigeration structure 10 uses transparent crystal as the cold side 1 directly and as the working side of the skin contact side at the same time, so as to obtain better icing effect and pre-cooling effect. The hot side 2 is formed by a heat pipe/VC heat pipe or a VC heat conducting plate. In this embodiment, the heat sink 4 connected to the heat pipe 20 is arranged above and below the fan 9, and the air path is communicated with the fan to suck cold air or discharge hot air. The fan 9 is installed in a cavity, one side of the cavity extends to form an air outlet channel 90, and the tail end of the air outlet channel 90 is communicated with the air outlet 81.

The air passages among the air inlet 80, the heat dissipation air passage on the surface of the radiator, the fan 9, the air outlet channel 90 and the air outlet 81 are communicated to form a heat dissipation air passage of the radiator; through starting the fan work, air intake 80 inhales cold wind and takes away the heat to the surface of radiator 4, thereby is discharged hot-blast air to air-out passageway 90 and the outside air outlet 81 air-cooled heat dissipation that realizes the radiator by fan 9. The fan 9 is electrically connected with the control circuit board 5, and the operation of the fan is controlled by the control circuit board 5.

The air inlet 80 or the air outlet 81 on the housing 8 may be one or more, and is a slot, a gap or a set of pores. As an embodiment, the air inlet 80 of the head portion is communicated with a space air passage of the heat dissipation surface of the light source assembly 6, and is used for sucking cold air (cold air) from outside to inside to perform air cooling heat dissipation on the light source assembly 6. The radiator 4 is located behind the air inlet 80 in the middle of the main body and is used for sucking ambient cold air into the surface of the radiator 4 for air cooling and heat dissipation.

The light source assembly 6 includes a light source 60 and a light reflecting cup 61 covering the light source. When the light source 60 is powered on, pulsed light is generated, the control circuit board 5 controls the power supply unit 7 to supply power to the light source, and the pulsed light is transmitted to the working head from the light source assembly 6 and acts on the surface of skin, so that ablation depilation or other cosmetic operations are performed. In this embodiment, the heat generated by the operation of the light source assembly 6 is also dissipated through the heat sink 4 connected to the heat pipe 20.

The air duct of the air guide cover 62 covered outside the light source assembly 6 is communicated with the cavity for installing the fan. The air passages among the air inlet 80 on the shell 8, the space on the surface of the light source component, the air guide cover 62, the fan 9, the air outlet channel 90 and the air outlet 81 are communicated to form a heat dissipation air duct of the light source component 6. Through starting the work of fan 9, realize inhaling cold wind to the light source subassembly surface from air intake 80, take away the heat on light source subassembly surface and form hot-blastly, hot-blastly will be discharged to air-out passageway 90 by the fan, discharge by air outlet 81 at last to realize the forced air cooling heat dissipation of light source subassembly 6. It is understood that other heat dissipation methods may be used to dissipate heat from the light source module.

When the semiconductor refrigeration structure 10 does not have a light transmission area and is applied to the refrigeration of the working surface of the beauty instrument, the semiconductor refrigeration structure 10 can be arranged at the periphery of the working surface, and the cold surface 1 is attached to the working surface for refrigeration.

The working head of the beauty instrument 100 is internally refrigerated by the semiconductor refrigeration structure 10 or directly adopts the cold surface 1 as the working surface, the hot end of the PN semiconductor galvanic couple layer of the semiconductor refrigeration structure 10 is directly formed with the heat pipe 20/VC heat conduction pipe or the VC heat conduction plate, and the heat generated by the hot end of the P type/N type semiconductor particles is directly conducted by the heat pipe or the VC heat conduction plate, so that the heat dissipation and refrigeration effects are obviously improved, the working surface refrigerated by the cold surface is in contact with the skin in pairs to form precooling and icing effects, and the unhairing/beautifying efficiency and effect are correspondingly improved due to quick heat dissipation and high efficiency.

The heat pipe/VC heat conductive plate in the above embodiments serves as a hot side of the semiconductor refrigeration structure, and is also referred to as a hot side substrate or a hollow metal substrate. The heat pipe/VC heat conduction plate is used as a heat end substrate, a heat end circuit is formed on the surface of the heat pipe/VC heat conduction plate, a hollow cavity is formed inside the heat pipe/VC heat conduction plate, an internal space is formed and used for containing a liquid refrigerant, and the heat is quickly conducted by utilizing evaporation refrigeration and gas-liquid phase change. Copper powder or copper mesh bundles and the like can be further placed in the inner space to form a capillary structure.

The heat pipe can adopt a heat pipe structure in the prior art, generally is a copper pipe, two ends of the heat pipe are sintered, bending in a certain proportion can be realized, the minimum bending radius can be 2 times of the pipe diameter, and the heat pipe can be manufactured into a 3D special-shaped pipe. As an embodiment, the internal structure of the heat pipe is as follows: copper pipes are adopted for vacuumizing, copper powder or copper net bundles are filled inside to form a capillary structure, and after liquid refrigerants are added, two ends of each copper pipe are sintered to form a vacuum closed space. The interior of the heat pipe is generally in a single channel structure, and the heat conduction effect is good.

The VC heat conduction pipe or the VC heat conduction plate can adopt the manufacturing process of the prior art, as an embodiment, an upper metal heat conduction plate (such as a copper plate) and a lower metal heat conduction plate (such as a copper plate) are sintered, the whole edges of the sintered upper metal heat conduction plate and the sintered lower metal heat conduction plate (such as the copper plate) are fused to form a closed space inside, copper powder or a copper mesh is placed in the space to form a capillary structure, and after a liquid refrigerant is added, two ends of the capillary structure are sintered; a separate evacuation port is required and the evacuation port is sintered after evacuation. The interior of the VC heat pipe or the VC heat conducting plate is generally a single wide channel structure. Compared with a heat pipe, the VC heat conduction pipe/VC heat conduction plate has better heat conduction effect.

In other embodiments, a superconducting pipe (or called a micro heat pipe) is used to replace the heat pipe/VC heat conducting plate in the above embodiments as the hot side (hot side substrate) of the semiconductor refrigeration structure, so as to obtain better heat conduction efficiency, and to conveniently and simply manufacture various 3D special-shaped plates and 3D special-shaped pipes. Wherein, the characteristics of the micro heat pipe are as follows:

the thermal conductivity is high, is 5000 times of that of the same metal material, and is more than 10 times of that of the traditional heat pipe; the unit heat exchange area is large; the reliability is high, the porous microgroove array operates independently, the whole heat conduction effect is not influenced when one channel 25 is damaged, and the whole damaged copper heat pipe fails in heat conduction; the surface structure is flexible, the surface contact with other components is easy, the heat exchange area is large, and holes, tapping and the like can be formed; the copper heat pipe is not easy to oxidize when contacting with air, and the copper heat pipe is easy to oxidize.

The superconducting pipe is a VC structure, adopts an aluminum tensile pipeline, contains liquid refrigerant inside, and can be flexibly bent to realize a 3D special-shaped plate and a 3D special-shaped pipe. The two ends of the drawn aluminum tube are sintered, the porous microgrooves which are integrally formed are arranged inside the aluminum tube to form a capillary structure, the porous microgrooves can be arranged inside the aluminum tube to form a single capillary structure, and the copper wire or the copper net does not need to be added when a liquid refrigerant is placed in the capillary structure. Due to the integral stretching forming, the special-shaped corner structure is firmer and more reliable, and a flat plate or special-shaped pipeline structure can be realized. The superconducting pipe is of a multi-channel structure. Compared with a copper pipe, the heat conduction effect of the copper pipe is improved by more than 10 times, and the copper pipe can be of a flat plate structure, an elbow structure or a more complex 3D special-shaped plate and a 3D special-shaped pipe. The aluminum superconducting tube may be surface treated by nickel plating, oxidation, electrolysis, etc.

The embodiment shown in fig. 11-13 is a semiconductor refrigeration structure 10 using superconducting tubes 20'. The semiconductor refrigeration structure 10 of the present embodiment includes a cold side 1, a PN galvanic couple layer 3 formed by electrically connecting P-type/N-type semiconductor particles by a hot side circuit/cold side circuit (hot side and cold side metal conductors), a superconducting tube 20', and a heat sink 4. The hot side (hot side substrate) 2 of the semiconductor refrigeration structure 10 is formed by bending a section of the superconducting pipe 20 ', a hot side circuit of semiconductor particles is formed on the surface, and the superconducting pipe 20' is connected with the radiator 4 for radiating heat. The hot side circuit may be formed by applying an insulating film 22 (see fig. 4) to the superconducting tube 20 ' at the position corresponding to the hot side 2 to form an insulating protection on the hot side 2 of the superconducting tube 20 ', and further forming a conductive layer, i.e., a hot side circuit 21, on the hot side 2 of the superconducting tube 20 ' covered with the insulating film 22 by an etching process or other metallization method, in accordance with the circuit layout of the hot side, as in the previous embodiment. A rectangular conductive block/hot side circuit 21, as shown in fig. 3, is formed on the hot side 2 of the superconducting tube 20' by an etching process for soldering and electrically connecting PN galvanic couples in series.

In this embodiment, the middle section of the superconducting pipe 20 'is bent to form a ring (not limited to a ring) as the hot surface 2, and both end sections of the superconducting pipe 20' are combined with the heat sink 4. Accordingly, the PN couple layer 3 conforms to the shape of the hot face (hot-end substrate) 2.

The superconducting pipe 20 ' is an integrally formed integral structure, an aluminum stretching pipeline is adopted, porous microgrooves 25, namely channels for containing liquid refrigerants, are integrally formed inside the superconducting pipe, the porous microgrooves are formed while the stretching pipeline is stretched and formed, the porous microgrooves 25 in the superconducting pipe 20 ' shown in the figures 12-13 are two channels, and the two ends of the superconducting pipe 20 ' are communicated along the length direction; each channel forms a single capillary structure, and liquid refrigerant is placed without adding copper powder or copper meshes.

In this embodiment, the superconducting tube 20' directly contacts the hot end of the P/N semiconductor particles to conduct heat, so that the heat dissipation efficiency is high, the loss is small, an intermediate link is omitted, and the heat conduction speed is increased. Both ends of the superconducting pipe 20' are connected to the heat sink 4 to rapidly dissipate heat.

When the semiconductor cooling structure is used for or cools a working surface of a cosmetic instrument (epilator), the cold surface (cold-side substrate) 1 may be annular or a monolithic transparent crystal, defining a light-transmissive region 12 in the middle. Pulsed light generated by a light source assembly inside the beauty instrument (depilator) is emitted from a light-transmitting area defined by the cold surface 1, or the pulsed light generated by the light source assembly is emitted from the light-transmitting area defined by the cold surface 1, the PN galvanic couple layer 3 and the hot surface 2 together, and beauty or depilation is performed; or the cold surface 1, the PN couple layer 3 and the hot surface 2 do not have light transmission areas, and at the moment, one or more independent semiconductor refrigeration structures can be arranged around the working surface to refrigerate the working surface. The structure of the depilation apparatus (beauty apparatus) is the same as that of the foregoing embodiment.

In the above embodiments, the hot side (or called hot side substrate) 2 of the semiconductor refrigeration structure 10 is a metal heat pipe/metal VC heat conduction plate/superconducting plate, on which a hot side circuit is directly disposed, and is electrically connected and welded with the hot side (higher temperature end) of the PN electric coupling layer (or called P-type/N-type semiconductor grain), so that the heat at the hot side of the semiconductor grain is directly and rapidly conducted to the metal heat pipe/metal VC heat conduction plate/superconducting plate without passing through an intermediate layer. The metal heat pipe/metal VC heat conduction plate/superconducting plate hot side (or called hot end base plate) 2 is internally provided with a cavity which contains a liquid refrigerant and utilizes capillary action to carry out gas-liquid phase change for heat dissipation, thereby quickly dissipating the heat of the hot side, and combining the radiator 4 to quickly dissipate the heat of the semiconductor refrigeration structure 10 and quickly refrigerate the cold side.

Referring to fig. 14, the semiconductor refrigeration structure 10 includes a semiconductor refrigeration chip 10 ' and a superconducting pipe 20 ' connected to the hot side 2 of the semiconductor refrigeration chip 10 ' and a heat sink 4. The semiconductor refrigeration piece 10' comprises a cold surface (cold end substrate) 1, a PN galvanic couple layer 3 and a hot surface (hot end substrate) 2, a cold end circuit is formed on the cold surface (cold end substrate) 1 through metallization, a hot end circuit is formed on the hot surface (hot end substrate) 2 through metallization, the cold end circuit (which is a metal conductor)/the hot end circuit (which is a metal conductor) and two ends of P type/N type semiconductor particles in the PN galvanic couple layer 3 are respectively and electrically connected to form a series circuit, and the semiconductor refrigeration piece can be welded and fixed, so that the cold surface (cold end substrate) 1, the PN galvanic couple layer 3 and the hot surface (hot end substrate) 2 are welded and fixed. The superconducting tube 20 ' is used for dissipating heat from the semiconductor cooling plate 10 ', and can be directly made to conform to the shape of the semiconductor cooling plate 10 ', in particular to the shape and size of the hot side 2, for example, in a ring shape, so as to conduct heat rapidly. The other end of the superconducting tube 20 'is connected to a radiator for radiating heat to the superconducting tube 20'. The structure of the superconducting pipe 20 'is the structure of the previous embodiment, the inside of which is formed with the porous microgrooves 25, i.e., the plurality of channels, for accommodating the liquid refrigerant, and the inside of the superconducting pipe 20' is formed with the capillary structure. The cooling surface 1 of the semiconductor cooling plate 10' can be a transparent crystal whole surface, and a light transmission area 12 is limited and used for the beauty instrument (depilator) as a working surface. Or, the semiconductor cooling plate 10' is of a ring structure, and defines a light transmission area together. In other embodiments, a thermally conductive plate is also provided between the hot side 2 and the superconducting tube 20'. The structure and principle of the semiconductor refrigeration structure applied to the beauty instrument (depilating instrument) in this embodiment are the same as those of the previous embodiments, and are not described herein again.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and are intended to be within the scope of the invention; the scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A semiconductor refrigeration structure comprises a PN galvanic couple layer, and a hot surface and a cold surface at two ends of the PN galvanic couple layer, wherein the PN galvanic couple layer comprises a plurality of pairs of galvanic couple formed by connecting P-type and N-type semiconductor particles; the method is characterized in that: the hot surface is formed by a heat pipe, a VC heat pipe or a VC heat conduction plate, the surface of the heat pipe, the VC heat pipe or the VC heat conduction plate forms a hot end circuit which is electrically connected with the hot end of the couple pair of the PN couple layer; the heat pipe or the VC heat conduction pipe or the inner space of the VC heat conduction plate contains a refrigerant.

2. The semiconductor cooling structure of claim 1, wherein: the semiconductor refrigeration structure comprises a radiator, and the heat pipe or the VC heat conduction plate is combined with the radiator for radiating; the radiator comprises a plurality of radiating fins; the heat pipe penetrates into the plurality of radiating fins for radiating.

3. The semiconductor cooling structure of claim 2, wherein: the VC heat conduction pipe or the VC heat conduction plate is connected with one or more heat pipes, and the VC heat conduction pipe or the VC heat conduction plate is communicated with the inner space of the heat pipes to form a closed space of a refrigerant; the heat pipe penetrates the plurality of radiating fins for radiating.

4. The semiconductor cooling structure of claim 1, wherein:

the cold surface forms a cold end circuit which is electrically connected with the cold ends of the couple pairs of the PN couple layer; the couple pair of the PN couple layer is formed by connecting the hot end circuit and the cold end circuit in series;

an insulating film and the hot end circuit are arranged on the hot surface;

the hot end circuit and the cold end circuit are metal conductors;

and the hot surface and the cold surface are respectively welded to the hot end and the cold end of the couple pair of the PN couple layer.

5. The semiconductor cooling structure of claim 1, wherein:

the cold surface is connected with the hot surface formed by a plurality of groups of PN galvanic couple layers and the heat pipes or the VC heat conduction plates, and the hot surfaces formed by the heat pipes or the VC heat conduction plates are respectively provided with a group of independent hot end circuits which are respectively welded and electrically connected with the hot ends of the PN galvanic couple layers;

the multiple groups of PN galvanic couple layers and the hot surfaces are welded on the surfaces of the multiple sides of the cold surface; and a group of independent cold end circuits are respectively arranged on multiple sides of the cold surface, and form a series circuit with the hot end circuit of the hot surface arranged on the surface and the galvanic couple pairs in the corresponding PN galvanic couple layers.

6. The semiconductor cooling structure according to any one of claims 1 to 5, wherein:

the cold surface of the semiconductor refrigeration structure is used as a working surface of the beauty instrument contacted with the skin or used for refrigerating the working surface so as to pre-cool the skin contacted with the working surface or form a cold compress effect;

when the cold surface of the semiconductor refrigeration structure is used as the working surface, the cold surface is provided with a light transmitting area for transmitting pulse light;

the shape and size of a section of heat pipe or VC heat conduction plate used as the hot surface are matched with the PN galvanic couple layer and the cold surface.

7. The semiconductor cooling structure of claim 6, wherein:

the cold surface is composed of a whole transparent crystal and is directly used as the working surface, and the light transmitting area is provided by the transparent crystal; and/or

The hot surface is a bent or annular or linear heat pipe or a VC heat conduction plate, and the cold surface, the PN galvanic couple layer and the hot surface are connected to jointly limit a light transmission area for pulse light to transmit; or the cold surface, the PN galvanic couple layer and the hot surface are connected without a light transmission area, and one or more semiconductor refrigeration structures are arranged on the periphery of the working surface.

8. The semiconductor cooling structure of claim 6, wherein:

the VC heat conduction pipe or the VC heat conduction plate is made of copper or aluminum and is buckled by two parts of shells together, a refrigerant is placed in the internal space, and the internal space is sintered after vacuumizing so as to form a closed space;

the VC heat conduction pipe or the VC heat conduction plate is directly used as a hot surface, the wall directly conducts heat of a hot end of the PN semiconductor couple layer, the internal refrigerant is evaporated and flows to the condensing section to be condensed into liquid, and the heat is exchanged and returns to the evaporating section from the liquid;

the condensing section is an extended VC heat conduction pipe or VC heat conduction plate, and the combined radiator radiates heat outwards; or the VC heat conduction pipe or the VC heat conduction plate is connected with the heat pipe, the heat pipe is combined with the radiator to radiate heat outwards, and the heat pipe is communicated with the VC heat conduction pipe or the VC heat conduction plate to form an integral closed space.

9. A beauty instrument comprises a main machine body, a light source component, a power supply unit and a control circuit board, wherein the light source component, the power supply unit and the control circuit board are arranged in the main machine body; the method is characterized in that: the beauty instrument is provided with the semiconductor refrigeration structure as claimed in any one of claims 1 to 8; the cold surface of the semiconductor refrigeration structure is used for refrigerating the working surface in contact with the skin or directly used as the working surface in contact with the skin to pre-cool or cold compress the skin in contact with the working surface.

10. The cosmetic instrument of claim 9, wherein:

the beauty instrument takes a depilating instrument as a main machine body; the shell of the beauty instrument is provided with an air inlet and an air outlet, and the inside of the main machine body is also provided with a fan; the air passages among the air inlet, the radiator connected with the hot surface of the semiconductor refrigeration structure, the fan and the air outlet are communicated, so that air-cooling heat dissipation is realized;

the beauty instrument controls the power supply unit to excite the light source assembly to generate pulsed light through the control circuit board, and the pulsed light generated by the light source assembly is transmitted out of the working surface to perform beauty treatment on skin contacted with the working surface;

the working surface is refrigerated by the semiconductor refrigeration structure, the cold surface, the PN galvanic couple layer and the hot surface of the semiconductor refrigeration structure are connected together to form an annular whole, a hollow area in the annular shape forms a light transmission area for transmitting pulse light generated by a light source component, the annular shape is attached to the periphery of the working surface, and the cold surface refrigerates the working surface; or the cold surface is used as the working surface and is a transparent crystal; or the working surface is refrigerated by a plurality of semiconductor refrigeration structures, the semiconductor refrigeration structures are distributed around the working surface, and the cold surface is attached to the periphery of the working surface.