CN214797434U - InAs-based room-temperature broadband infrared photoelectric detector - Google Patents
InAs-based room-temperature broadband infrared photoelectric detector Download PDFInfo
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- CN214797434U CN214797434U CN202120239638.6U CN202120239638U CN214797434U CN 214797434 U CN214797434 U CN 214797434U CN 202120239638 U CN202120239638 U CN 202120239638U CN 214797434 U CN214797434 U CN 214797434U
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Abstract
The patent discloses an InAs-based room temperature broadband infrared photoelectric detector. The detector sequentially comprises an InAs substrate, an InAsSbP barrier layer, an InAs absorption layer and an InAsSbP window layer from bottom to top; a lower electrode (5) is formed on the barrier layer and an upper electrode (6) is formed on the window layer. The photoelectric detector that this patent provided has that the rate of detection is high under the room temperature, but zero bias voltage work, effectively detect advantages such as wavelength range is wide.
Description
Technical Field
The patent relates to the technical field of semiconductor photoelectric detectors, in particular to an InAs-based medium-short wave (1.5-3.5 mu m) infrared photoelectric detector working at room temperature.
Background
The medium-short wave infrared photoelectric detector has wide application in military and civil fields such as military reconnaissance, weather forecast, environmental monitoring, intelligent agriculture, thermophotovoltaic batteries and the like. The III-V group semiconductor compound InAs and the alloy thereof become important materials for preparing medium-short wave infrared photoelectric detectors due to the advantages of forbidden band matching, high carrier mobility and the like. However, most of the detectors of this type still have the defects of low working temperature, narrow detection wavelength range, low signal-to-noise ratio and the like, and the practical application of the detectors is greatly restricted.
Diffusion current and generation-recombination current are important factors affecting photovoltaic type detectors, wherein diffusion current is temperature dependent and dominates at high temperatures (room temperature). In order to reduce the diffused dark current of the device and increase the signal-to-noise ratio of the device, the detector is usually operated under low temperature conditions, and additional refrigeration equipment is inevitably introduced, which causes inconvenience to the application of the device. With the rapid development of scientific technology, especially the application scenes of the infrared photoelectric detection technology become wider and wider, higher requirements are put forward on the miniaturization and integration of detection devices. How to improve the signal-to-noise ratio of the detector at room temperature is an urgent problem to be solved.
The cutoff wavelength of a pn junction-type infrared detector is defined as the wavelength corresponding to when the output signal falls to half of the peak signal. The cutoff wavelength may be divided into a long-wavelength cutoff wavelength and a short-wavelength cutoff wavelength. The long-wave cut-off wavelength is determined by the band gap width of the absorption layer, and when the wavelength of incident light is longer than the long cut-off wavelength, the photon energy is too small to enable valence band electrons to jump to a conduction band to form free carriers; short-cut wavelength because for short-wavelength incident light, most of the radiation is absorbed in the region very close to the surface, which is far from the depletion region, the carriers generated in the region are not easily collected and eventually lost by recombination. By this definition, the effective detection wavelength range of the conventional InAs-based pn junction photodetector is usually 2.5 μm to 3.5 μm, and the short effective detection wavelength range severely limits the application of the detector.
In order to solve the problems, the patent discloses an InAs-based medium-short wave infrared photodetector which has the advantages of zero-bias operation at room temperature, high signal-to-noise ratio, wide effective detection wavelength range (1.5-3.5 microns) and the like.
Disclosure of Invention
Technical problem to be solved
Aiming at the problems, the patent provides an InAs-based room temperature broadband infrared photoelectric detector which is used for at least partially solving the problems of low working temperature, narrow detection wavelength range, low signal-to-noise ratio and the like of the traditional photoelectric detector.
(II) technical scheme
The patent discloses an InAs-based infrared photoelectric detector, which comprises a substrate 1, a barrier layer 2, an absorption layer 3 and a window layer 4; the lower electrode 5 is prepared on the barrier layer and the upper electrode 6 is prepared on the window layer.
The substrate 1 is a p-type InAs thin film layer with (100) crystal orientation.
The barrier layer 2 is p-type Zn-doped InAs1-x-ySbxPyA thin film layer with Zn doping concentration of 1-4 × 1018cm-3The thickness is 0.1-2 μm, and the components x is 0.1-0.15 and y is 0.26-0.3.
The absorption layer 3 is an unintentionally doped InAs thin film layer with a carrier concentration of 3-5 × 1016cm-3The thickness is 0.5-8 μm.
The window layer 4 is n-type Te doped InAs1-x-ySbxPyA thin film layer having a Te doping concentration of 5-8X 1017cm-3The thickness is 0.1-1 μm, and the components x is 0.1-0.15 and y is 0.26-0.3.
The lower electrode 5 and the upper electrode 6 are Cr, Ti, Ag or Au metal electrodes with a thickness of 0.05-0.5 μm. The advantage of this patent lies in:
the patent uses InAs as the barrier layer 2 material1-x-ySbxPyThe selection, design and optimization not only ensure the lattice matching of materials in the deviceAnd effectively reduces the dark current of the device; through the design and optimization of the absorption layer 3, medium-short wave infrared incident light can be efficiently absorbed, photogenerated carriers are generated, and the carriers are effectively separated and collected under the action of an internal electric field; by selecting and optimizing the material of the window layer 4, the surface leakage current of the device is effectively inhibited, and the effective detection of the device on near-infrared incident light is greatly enhanced. Based on the above, under the working condition of room temperature (22 ℃), the detection rate of the infrared incident light device with wide wave band (1.5-3.5 μm) is more than 3 multiplied by 10 under zero bias9Jones。
Drawings
Fig. 1 is a structural cross-sectional view of the novel InAs-based room-temperature broadband infrared photodetector according to the embodiment of the present invention.
Fig. 2 is a top view of the structure of the novel InAs-based room-temperature broadband infrared photodetector according to the embodiment of the present invention.
Fig. 3 shows the room temperature zero bias detection rate of the novel InAs-based room temperature broadband infrared photodetector according to the embodiment of the present invention.
Detailed Description
For a better understanding of the objects, aspects and advantages of the present patent, reference is made to the following detailed description taken in conjunction with the accompanying drawings.
The present disclosure provides three embodiments, in the first embodiment, the substrate 1 material is a p-type InAs material of (100) crystal orientation. The material of the barrier layer 2 is p-type Zn-doped wide-band-gap InAs1-x-ySbxPyZn doping concentration of 1X 1018cm-3The thickness is 0.1 μm, and the components x is 0.1 and y is 0.26. The absorption layer 3 is an unintentionally doped InAs material with a carrier concentration of 3X 1016cm-30.5 μm thick, the window layer 4 being n-type Te doped wide bandgap InAs1-x-ySbxPyTe doping concentration of 5X 1017cm-3The thickness is 0.1 μm, the composition x is 0.1, y is 0.26, and the lower electrode 5 and the upper electrode 6 are Ti/Au metal electrodes with a thickness of 0.05 μm.
In a second embodiment, the substrate 1 material is a p-type InAs material of (100) crystal orientation.The material of the barrier layer 2 is p-type Zn-doped wide-band-gap InAs1-x-ySbxPyZn doping concentration of 2X 1018cm-3The thickness is 1 μm, and the component x is 0.13 and y is 0.28. The absorption layer 3 is an unintentionally doped InAs material with a carrier concentration of 4X 1016cm-3The thickness is 4 μm, the window layer 4 is InAs with n-type Te doping wide band gap1-x-ySbxPyTe doping concentration of 6.5X 1017cm-3The thickness is 0.5 μm, the composition x is 0.13, y is 0.28, and the lower electrode 5 and the upper electrode 6 are Ti/Au metal electrodes with a thickness of 0.3 μm.
In a third embodiment, the substrate 1 material is a p-type InAs material of (100) crystal orientation. The material of the barrier layer 2 is p-type Zn-doped wide-band-gap InAs1-x-ySbxPyZn doping concentration of 4X 1018cm-3The thickness is 2 μm, and the component x is 0.15 and y is 0.3. The absorption layer 3 is an unintentionally doped InAs material with a carrier concentration of 5X 1016cm-3The thickness is 8 μm, the window layer 4 is InAs with n-type Te doping wide band gap1-x-ySbxPyTe doping concentration of 8X 1017cm-3The thickness is 1 μm, the composition x is 0.15, y is 0.3, and the lower electrode 5 and the upper electrode 6 are Ti/Au metal electrodes with a thickness of 0.5 μm.
The following processes were used in all three examples:
and a barrier layer 2, an absorption layer 3 and a window layer 4 are sequentially grown in situ on the InAs substrate by adopting a liquid phase epitaxy method. The melting source used for growth is firstly baked for 2-3h at 650 ℃ to remove the impurities unintentionally doped in the melting source and uniformly mix the melting source materials. Before the substrate is placed in a growth cavity, sequentially performing ultrasonic treatment for 5-10min with acetone, isopropanol and deionized water, blow-drying with a nitrogen gun, and immersing in HNO3：H2O2And etching the substrate for 30s-1min in an etching solution with the ratio of 3:5 to remove a natural oxide layer on the surface, and then washing the substrate by using a large amount of deionized water and drying the substrate by using a nitrogen gun. During growth, hydrogen is continuously introduced into the cavity to create a reducing atmosphere, and the growth adopts a super-cooling method, wherein the super-cooling degree is 15-25 ℃.
Before etching the table top, ultrasonic cleaning is sequentially carried out for 10-15min by using acetone and isopropanol to remove surface contamination. And then, a mesa graph is manufactured on the surface of the grown sample by adopting a standard photoetching process, the mesa graph is placed in an oven and baked for 12 hours after the temperature is set to be 65 ℃, so that the side etching phenomenon during mesa etching is reduced. And etching from top to bottom by adopting an etching process to form the mesa. The etching is stopped at the barrier layer 2, so that the exposed parts of the finished device are the barrier layer 2 and the window layer 4. And soaking the sample in acetone and isopropanol to remove residual glue on the surface of the sample, and ultrasonically cleaning the sample with acetone for 20-30min to thoroughly clean the residual glue on the surface.
Electrode holes are formed on the surface of the sample by a standard photoetching process, then the sample is immersed in a BOE solution (HF: NH4F ═ 1:7) for 30s-1min, and nitrogen is blown dry to remove a natural oxidation layer possibly generated in the previous process. The lower electrode 5 and the upper electrode 6 are formed by thermal evaporation (vacuum sputtering, electron beam evaporation, etc.). The sample is soaked in acetone for 12h to remove the excessive gold and photoresist on the surface, then rinsed in isopropanol to remove the acetone on the surface, and dried by nitrogen.
The devices prepared in the three examples have similar performances. Under the working condition of zero bias at room temperature, the detection rate of the device is more than 3 multiplied by 10 for wide-band (1.5-3.5 mu m) infrared incident light9Jones。
The above embodiments are further described in detail for the purpose of illustrating the invention, and it is to be understood that the above embodiments are illustrative only, and are not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. An InAs-based room temperature broadband infrared photoelectric detector comprises a substrate (1), a barrier layer (2), an absorption layer (3) and a window layer (4) from bottom to top in sequence; a lower electrode (5) is formed on the barrier layer and an upper electrode (6) is formed on the window layer.
2. The InAs-based room temperature broadband infrared photodetector of claim 1, wherein the substrate (1) is a p-type InAs thin film layer of (100) crystal orientation.
3. The InAs-based room-temperature broadband infrared photodetector of claim 1, wherein the blocking layer (2) is p-type Zn-doped InAs1-x-ySbxPyAnd the film layer is 0.1-2 μm thick.
4. The InAs-based room-temperature broadband infrared photodetector of claim 1, wherein the absorption layer (3) is an unintentionally doped InAs thin film layer having a thickness of 0.5-8 μm.
5. The InAs-based room temperature broadband infrared photodetector of claim 1, wherein the window layer (4) is n-type Te-doped InAs1-x-ySbxPyAnd the film layer is 0.1-1 μm thick.
6. The InAs-based room-temperature broadband infrared photodetector of claim 1, wherein the lower electrode (5) and the upper electrode (6) are Cr, Ti, Ag or Au electrodes having a thickness of 0.05-0.5 μm.
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| CN202120239638.6U CN214797434U (en) | 2021-01-28 | 2021-01-28 | InAs-based room-temperature broadband infrared photoelectric detector |
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