CN214750671U - Testing device for switching time of PNP bipolar transistor - Google Patents
Testing device for switching time of PNP bipolar transistor Download PDFInfo
- Publication number
- CN214750671U CN214750671U CN202120204354.3U CN202120204354U CN214750671U CN 214750671 U CN214750671 U CN 214750671U CN 202120204354 U CN202120204354 U CN 202120204354U CN 214750671 U CN214750671 U CN 214750671U
- Authority
- CN
- China
- Prior art keywords
- triode
- resistor
- tested
- electrode
- pnp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The utility model relates to a testing arrangement of PNP bipolar transistor on-off time belongs to semiconductor technology field. The PNP triode to be tested is connected with the base electrode of the PNP triode to be tested through a third resistor; the emitting electrode of the PNP triode to be tested is connected with the positive electrode of the voltage-stabilized power supply, the A end of the oscilloscope is connected with the collector electrode of the reference triode, the B end of the oscilloscope is connected with the collector electrode of the PNP triode to be tested, and the collector electrode of the PNP triode to be tested is connected with the fourth resistor and grounded. The method and the device can test the switching time of the PNP bipolar transistor.
Description
Technical Field
The utility model relates to a testing arrangement of PNP bipolar transistor on-off time belongs to semiconductor technology field.
Background
The Bipolar Power Transistor (PBJT for short) has the advantages of being easy to generate high Power, obtaining high voltage and large current, reducing saturation voltage, being high in simulation application frequency and the like, and is widely applied to electronic systems such as aerospace, communication, radar, weaponry and the like and civil electronic equipment, and the reliability of the electronic systems (equipment) is directly influenced by the quality of the Bipolar Power Transistor. The switching time is a characteristic parameter for representing the dynamic characteristic of the bipolar power transistor, is the most important quality parameter for evaluating the transistor switch, and is also the most important technical parameter index for evaluating and acceptance testing the bipolar power transistor by the production and use unit of the electronic device. When a transistor is used as a switch, the switching time parameters of the transistor directly influence the working frequency and the overall performance of the circuit.
Among various current test devices, an NIB-2961A triode switch parameter tester mainly measures the switch parameter of a low-power triode, and the measurement range is from 5nS to 500 nS; the UI9600Ts tester mainly measures the switching parameters of NPN medium-power triode, and the measuring range is from 1 mus to 20 mus. For the switching parameter test of the PNP high-power triode, no special test equipment exists at present due to less use requirements.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a testing arrangement of PNP bipolar transistor on-off time is provided to above-mentioned prior art can test PNP bipolar transistor's on-off time.
The utility model provides a technical scheme that above-mentioned problem adopted does: a testing device for the switching time of a PNP bipolar transistor comprises a signal generator and an oscilloscope, wherein the positive electrode of the signal generator is connected with the base electrode of a reference triode through a first resistor, the negative electrode of the signal generator is connected with the emitting electrode of the reference triode and grounded, the collecting electrode of the reference triode is connected with the base electrode of the PNP triode to be tested through a second resistor, a third resistor is arranged between the base electrode of the PNP triode to be tested and the emitting electrode of the PNP triode to be tested, one end of the third resistor is connected with the base electrode of the PNP triode to be tested, and the other end of the third resistor is connected with the emitting electrode of the PNP triode to be tested; the emitting electrode of the PNP triode to be tested is connected with the positive electrode of the voltage-stabilized power supply, the A end of the oscilloscope is connected with the collector electrode of the reference triode, the B end of the oscilloscope is connected with the collector electrode of the PNP triode to be tested, and the collector electrode of the PNP triode to be tested is connected with the fourth resistor and grounded.
The resistance values of the first resistor and the second resistor are 0.95-1.05 k omega respectively; the resistance value of the third resistor is 8.5-10 k omega, and the resistance value of the fourth resistor is 95-105 omega.
The voltage value of the voltage-stabilized power supply is 9.5-10.5V.
Compared with the prior art, the utility model has the advantages of: a point A of an oscilloscope is an input waveform test point of a reference triode, a point B of the oscilloscope is an output waveform test point of a PNP triode to be tested, the input and output waveforms are compared by the same oscilloscope, the switching time of the PNP triode to be tested can be obtained, and the switching time of the PNP bipolar transistor can be tested.
Drawings
Fig. 1 is a schematic diagram of a testing apparatus for a switching time of a PNP bipolar transistor according to an embodiment of the present invention;
in the figure, a signal generator 1, a first resistor 2, a reference triode 3, a second resistor 4, a third resistor 5, a PNP triode to be tested 6, a fourth resistor 7, an oscilloscope 8 and a regulated power supply 9 are arranged.
Detailed Description
The present invention will be described in further detail with reference to the following embodiments.
As shown in fig. 1, the testing apparatus for the switching time of the PNP bipolar transistor in this embodiment includes a signal generator 1, a regulated power supply 9, an oscilloscope 8, a reference triode 3, a first resistor 2, a second resistor 4, a third resistor 5, a fourth resistor 7, and a to-be-tested PNP triode 6. The positive pole of the signal generator 1 is connected with one end of the first resistor 2, and the negative pole of the signal generator 1 is connected with the emitter of the reference triode 6 and is grounded. The first resistor 2 is connected with the base electrode of the reference triode 6; the collector of the reference triode 6 is connected with the A end of the oscilloscope 8, and the emitter of the reference triode 6 is grounded. The collecting electrode of benchmark triode 6 links to each other with second resistance 4 one end, and the second resistance 4 other end links to each other with the base of the PNP triode 6 that awaits measuring, and the base of the PNP triode 6 that awaits measuring still links to each other with the one end of third resistance 5, and the other end of third resistance 5 links to each other with the projecting pole of the PNP triode 6 that awaits measuring. The emitting electrode of the PNP triode 6 to be tested is connected with the positive electrode of the voltage-stabilized power supply 9, the collecting electrode of the PNP triode 6 to be tested is connected with one end of the fourth resistor 7, and the other end of the fourth resistor 7 is grounded; and the end B of the oscilloscope 8 is connected with the collector of the PNP triode to be tested 6.
The model of the signal generator 1 is XFG6, the model of the reference triode 3 is 2N2222, the model of the oscilloscope 8 is XSC6, and the voltage value of the stabilized voltage power supply 9 is 10V; the resistance values of the first resistor 2 and the second resistor 4 are respectively 10k omega, the resistance value of the third resistor 5 is 9.1k omega, and the resistance value of the fourth resistor 7 is 100 omega.
The oscillation frequency is provided by the signal generator 1 in front of the first resistor 2, the stabilized voltage power supply 9 supplies power for the reference triode and the PNP triode to be tested 6, the point A of the oscilloscope 8 is an input waveform test point of the reference triode, the point B of the oscilloscope is an output waveform test point of the PNP triode to be tested, and the input waveform and the output waveform are compared by the same oscilloscope, so that the switching time of the PNP triode to be tested can be obtained, and the switching time of the PNP bipolar transistor can be tested. The switching time of the PNP triodes to be tested with different powers is tested, and the measurement range of the embodiment is 100 ns-20 mu s.
In addition to the above embodiments, the present invention also includes other embodiments, and all technical solutions formed by equivalent transformation or equivalent replacement should fall within the protection scope of the claims of the present invention.
Claims (3)
1. A testing device for the switching time of a PNP bipolar transistor is characterized in that: the PNP triode base electrode testing device comprises a signal generator and an oscilloscope, wherein the positive electrode of the signal generator is connected with the base electrode of a reference triode through a first resistor, the negative electrode of the signal generator is connected with the emitting electrode of the reference triode and grounded, the collector electrode of the reference triode is connected with the base electrode of a to-be-tested PNP triode through a second resistor, a third resistor is arranged between the base electrode of the to-be-tested PNP triode and the emitting electrode of the to-be-tested PNP triode, one end of the third resistor is connected with the base electrode of the to-be-tested PNP triode, and the other end of the third resistor is connected with the emitting electrode of the to-be-tested PNP triode; the emitting electrode of the PNP triode to be tested is connected with the positive electrode of the voltage-stabilized power supply, the A end of the oscilloscope is connected with the collector electrode of the reference triode, the B end of the oscilloscope is connected with the collector electrode of the PNP triode to be tested, and the collector electrode of the PNP triode to be tested is connected with the fourth resistor and grounded.
2. The PNP bipolar transistor switching time testing apparatus of claim 1, wherein: the resistance values of the first resistor and the second resistor are 0.95-1.05 k omega respectively; the resistance value of the third resistor is 8.5-10 k omega, and the resistance value of the fourth resistor is 95-105 omega.
3. The PNP bipolar transistor switching time testing apparatus of claim 1, wherein: the voltage value of the voltage-stabilized power supply is 9.5-10.5V.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120204354.3U CN214750671U (en) | 2021-01-26 | 2021-01-26 | Testing device for switching time of PNP bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120204354.3U CN214750671U (en) | 2021-01-26 | 2021-01-26 | Testing device for switching time of PNP bipolar transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN214750671U true CN214750671U (en) | 2021-11-16 |
Family
ID=78641265
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202120204354.3U Active CN214750671U (en) | 2021-01-26 | 2021-01-26 | Testing device for switching time of PNP bipolar transistor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN214750671U (en) |
-
2021
- 2021-01-26 CN CN202120204354.3U patent/CN214750671U/en active Active
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101256214A (en) | Self-adapting testing system and method for radio-frequency power amplifier | |
CN109884492A (en) | A kind of test device of power MOSFET device avalanche capability | |
CN203479979U (en) | DC parameter test system of power semiconductor device | |
CN101655408B (en) | Detection circuit for non-common mode voltage strain bridge signal | |
CN214750671U (en) | Testing device for switching time of PNP bipolar transistor | |
CN201662583U (en) | Ultrahigh-frequency pulse generator | |
CN206460695U (en) | A kind of analog waveform generator experiment device for teaching | |
CN103675558A (en) | Performance test device for motor controller major loop of electric vehicle | |
CN212989502U (en) | Equipment test fixture based on STM32 | |
CN111308310B (en) | Dynamic rds (on) parameter testing machine of gallium nitride device | |
CN215263701U (en) | Test calibration system of precision power supply | |
CN214041542U (en) | Constant current circuit for direct current resistance tester | |
CN113495204B (en) | Switching time test system for small power tube | |
CN202393804U (en) | Pulse peak value sampling device | |
CN204241638U (en) | The pulse current amplitude calibrating installation of power IGBT module testing apparatus | |
CN206788313U (en) | A kind of bipolar power transistor switch time parameter and standard detection means | |
CN213813852U (en) | Automatic test system for electric vacuum transmitter | |
CN104635171A (en) | DC power supply testing system | |
CN114372436B (en) | Simulation design test method based on WiFi6 PA dynamic EVM | |
CN106597113B (en) | Power line iron tower ground resistance on-line tester based on proportion detection | |
CN212811285U (en) | Overcurrent protection circuit and electronic device detection equipment | |
CN116203373B (en) | Multifunctional semiconductor field effect transistor test circuit and method | |
CN219574293U (en) | Interelectrode voltage test circuit and test system | |
CN203519811U (en) | Multiple-position electric energy quality analytical test calibrating device | |
CN218331827U (en) | Testing device for self-heating effect of semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |