CN214736074U

CN214736074U - Gas reaction device

Info

Publication number: CN214736074U
Application number: CN202022911811.0U
Authority: CN
Inventors: 吴铭钦; 刘峰
Original assignee: Suzhou Yuzhu Electromechanical Co Ltd
Current assignee: Suzhou Yuzhu Electromechanical Co Ltd
Priority date: 2020-12-07
Filing date: 2020-12-07
Publication date: 2021-11-16
Anticipated expiration: 2030-12-07

Abstract

The utility model relates to a gas reaction device, which is applied to the chemical vapor deposition reaction technology of a Face Down type (Face Down). The gas reaction device comprises a reaction cavity and a substrate bearing device, wherein the substrate bearing device is arranged at the upper part in the reaction cavity. The gas reaction device is characterized in that a rapid gas flow channel is formed between the substrate bearing device and the reaction cavity, and the height of the rapid gas flow channel is more than 0 mm and less than or equal to 5 mm. The utility model discloses highly reduce quick airflow channel to providing 5 millimeters to promote the speed of the interior circulation of gas of quick airflow channel, reduce impurity subsides on the base plate and gaseous consumption.

Description

Gas reaction device

Technical Field

The present invention relates to a technique for manufacturing or processing semiconductors, and more particularly to a gas reaction apparatus.

Background

Metal-organic Chemical Vapor Deposition (MOCVD) is a process for growing semiconductor thin films on substrates. In the metal organic chemical vapor deposition method, when a semiconductor film is grown, a carrier gas and an organic metal gas are introduced into a reaction chamber by using a shower head, and the reaction chamber is uniformly filled with the gas, so that the semiconductor film is grown on a reaction surface of a wafer substrate. In the process of growing semiconductor thin films, the flow rate and stability of gases are an important factor affecting the quality of semiconductor processes.

In the metal organic chemical vapor deposition process, the quality of the formed film is directly affected by the problems of whether the contact between the reaction surface of the substrate and the reaction gas is uniform, whether the dust is scattered and attached to the reaction surface of the substrate, and the like. Furthermore, if the flow rate of the reaction gas is not fast enough in the fabrication process of the metal organic chemical vapor deposition method, the group iii metal gas and the group V special gas may be deposited on the gas hole of the showerhead or the reaction chamber, which not only consumes the gas cost, but also seriously affects the quality of the semiconductor fabrication process.

Therefore, if the deposition of dust on the surface can be reduced, the problem of the reduction of the wafer yield can be solved, and the gas consumption can be reduced, thereby improving the production quality.

In view of the above, the present invention provides a gas reaction apparatus to overcome the above problems.

SUMMERY OF THE UTILITY MODEL

The main objective of the present invention is to provide a gas reaction device, which can increase the speed of gas flowing through the rapid gas flow channel to improve the uniformity of film formation on the wafer, and reduce the deposition of impurities in the reaction chamber.

Another object of the present invention is to provide a gas reaction apparatus, which has a small flow channel for fast gas flow, and has high deposition efficiency due to fast gas flow, thereby reducing gas consumption and process cost.

To achieve the above object, the present invention provides a gas reaction device, which comprises a reaction chamber and a substrate bearing device, wherein the substrate bearing device is disposed on the upper portion of the reaction chamber, so that a fast airflow channel is formed between the substrate bearing device and the reaction chamber, and the height of the fast airflow channel is greater than 0 mm and less than or equal to 5 mm.

In this embodiment, the substrate supporting device is used for supporting at least one substrate, and the substrate supporting device includes at least one disk having a substrate slot with an open top for placing the substrate with the reaction surface facing downward, and a reaction port is disposed below the substrate slot for exposing the reaction surface. The lower large plate is provided with at least one plate groove with an open upper part for placing the plate, and a bottom opening is arranged below the plate groove for exposing the reaction surface. An upper large disk covers the upper part of the lower large disk and seals the upper part of the disk groove.

In this embodiment, the disk slot has an annular groove, the disk has a butt-joint portion inserted into the annular groove, and the annular groove has an annular air-floating channel therein. The annular air floating channel is connected with an air inlet channel in the tangential direction so as to introduce air floating gas to apply force to the butt joint part to enable the disk to suspend and rotate. The annular groove is connected with a first discharge port for discharging floating gas.

In this embodiment, the flying height of the disk is controlled by the flow rate of the air-bearing gas.

In this embodiment, the upper plate is provided with a second outlet connected to the first outlet.

In this embodiment, the edge of the inner wall of the substrate slot is provided with a plurality of supporting fingers for supporting the edge of the substrate, and the top surfaces of the supporting fingers are inclined towards the center of the substrate slot.

In this embodiment, the gas reaction apparatus further includes a lifting cylinder and a waste gas collecting ring connected to the lower plate for supporting and driving the substrate supporting device to lift and rotate, and collecting the waste gas after the reaction.

In this embodiment, the sidewall of the reaction chamber is provided with at least one access port.

The utility model discloses quick airflow channel's runner is narrow, can promote the speed of the interior circulation of gas of quick airflow channel, and the cooperation base plate bears the device simultaneously and makes the base plate rotate at a high speed, can promote the degree of consistency that film formed on the wafer by a wide margin, reduces subsiding of reaction intracavity impurity simultaneously, and because of the gas flow rate makes deposition efficiency high soon, can reduce gaseous consumption, reduces the processing procedure cost by a wide margin.

For further understanding and appreciation of the structural features and advantages of the invention, reference should be made to the drawings and detailed description thereof, which are illustrated in the accompanying drawings.

Drawings

Fig. 1 is a schematic sectional view of the gas reaction chamber of the present invention.

Fig. 2 is a schematic view of a half-side section of a gas reaction chamber according to the present invention.

Fig. 3 is a top exploded view of the substrate supporting apparatus according to the present invention.

Fig. 4 is a cross-sectional exploded view of the substrate supporting apparatus according to the present invention.

FIG. 5 is a schematic diagram of another use state of the half-side section of the gas reaction chamber of the present invention.

Description of reference numerals: 1-a gas reaction device; 10-a reaction chamber; 11-a taking and placing port; 12-a fast airflow channel; 20-a substrate carrier; 21-a disc; 211-substrate slot; 212-a reaction port; 213-a docking station; 214-a bearer finger; 22-lower large plate; 220-a first channel; 221-a disk slot; 222-bottom port; 223-ring groove; 224-annular air flotation channel; 225-gas introduction channel; 226-first drain port; 222-bottom port; 23-upper large disc; 230-a second channel; 231-a second discharge opening; 30-lifting cylinder and waste collecting ring; 40-a spray head; 50-a substrate; 52-reaction surface; l-height.

Detailed Description

The utility model discloses can reduce the height of the quick airflow channel of reaction chamber, make gaseous velocity of flow at quick airflow channel become fast to improve the degree of consistency that the film formed on the wafer, can sweep impurity simultaneously, reduce subsiding of reaction intracavity impurity. And because of the utility model discloses shorten quick airflow channel height, make the gas velocity of flow make sedimentary time shorten soon, can reduce gaseous consumption, reduce the processing procedure cost by a wide margin.

Please refer to fig. 1 to 2 for explaining the structure of the present invention. Fig. 1 is a schematic half-sectional view of a gas reaction apparatus 1 according to the present invention, and fig. 2 is a schematic cross-sectional view of only the right half of the gas reaction apparatus 1. In the present embodiment, the gas reaction apparatus 1 is a surface Down type (Face Down) gas reaction apparatus 1, which comprises a reaction chamber 10, a substrate carrying device 20, a lifting cylinder and a waste gas collecting ring 30, and a shower head 40, wherein the substrate carrying device 20 can carry a substrate 50, so that the substrate 50 (wafer) is exposed from the fast gas flow channel 12 with the reaction surface 52 facing downward and contacts with the reaction gas. With this arrangement, the dust is settled down due to gravity and is less likely to adhere to the reaction surface 52 of the substrate 50, thereby improving the yield loss caused by the dust scattering. Meanwhile, the configuration can also ensure that the substrate 50 is uniformly and stably contacted with the reaction gas, which is more beneficial to the automatic production with high yield.

The side wall of the reaction chamber 10 is provided with at least one pick-and-place opening 11, and the pick-and-place opening 11 is arranged at a position corresponding to the reaction chamber 10 and close to the lower half part.

It should be noted that the substrate support device 20 is disposed in the upper half of the reaction chamber 10, such that a fast gas flow channel 12 is formed between the substrate support device 20 and the lower half of the reaction chamber 10. Wherein, the distance between the bottom of the reaction chamber 10 and the substrate carrier 20, i.e. the height L of the fast gas flow channel 12, is less than or equal to 5 mm, but greater than 0 mm.

The utility model discloses a quick airflow channel 12 that sets up between reaction chamber 10 and the base plate bears device 20 makes shower nozzle 40 spun reaction gas can flow in quick airflow channel 12, enters into a lift section of thick bamboo and waste gas collecting ring 30 at last to retrieve reaction gas. Compare the airflow channel who reaches 3 ~ 5 centimeters in the current reaction chamber, the utility model discloses reduce quick airflow channel 12's high L to 5 millimeters, can provide reaction gas and have faster velocity of flow in quick airflow channel 12.

Next, referring to fig. 3 and fig. 4, the structure of the substrate carrier 20 will be described. The substrate carrier 20 is disposed in the reaction chamber 10 and located at the upper half portion of the reaction chamber 10, and is used for carrying at least one substrate 50. The substrate carrier 20 includes at least one disk 21, a lower platter 22 and an upper platter 23. The disk 21 has a substrate slot 211 opened at the top for the substrate 50 to be placed with the reaction surface 52 facing downward. A reaction port 212 is disposed below the substrate slot 211 for exposing the reaction surface 52 of the substrate 50, and a plurality of supporting fingers 214 are disposed on the inner wall of the substrate slot 211 for supporting the edge of the substrate 50, wherein the top surfaces of the supporting fingers 214 are inclined toward the center of the substrate slot 211. The lower large plate 22 has at least one plate slot 221 with an open top for placing the plate 21 therein, and a bottom opening 222 is disposed below the plate slot 221 for exposing the reaction surface 52 to the lower half of the reaction chamber 10. The upper large plate 23 covers the upper part of the lower large plate 22 and seals the upper part of the plate groove 221, and the radius of the upper large plate 23 is larger than that of the lower large plate 22.

The disc slot 221 is further provided with an annular groove 223, and the disc 21 is provided with an abutting portion 213 corresponding to the annular groove 223. An annular air floating channel 224 is disposed in the annular groove 223, and the annular air floating channel 224 is connected to an air inlet channel 225 along a tangential direction thereof to introduce air floating gas to apply force to the abutting portion 213, so as to suspend and rotate the disk 21. The annular groove 223 is connected to a first discharge hole 226 for discharging the floating gas. The upper plate 23 is further provided with a second discharge hole 231 connected to the first discharge hole 226 for discharging the floating gas from the second discharge hole 231. Wherein the flow rate of the air-floating gas can be used to control the suspension height of the disk 21.

Referring back to fig. 1 and 2, the lift cylinder and the exhaust gas collecting ring 30 are disposed around the edge of the reaction chamber 10, and the lift cylinder and the exhaust gas collecting ring 30 is connected to the lower plate 22 to support and drive the substrate carrier 20 to lift and rotate. The elevating cylinder and the exhaust gas collecting ring 30 can adjust the height position of the substrate supporting device 20 in the reaction chamber 10, and also can drive the lower large plate 22 to rotate slowly (in practice, the rotating speed below 20RPM can be adopted), so that the contact effect between the substrate 50 supported on the substrate supporting device 20 and the reaction gas is more uniform. In practice, the lift cylinder and the exhaust gas collecting ring 30 may be provided with a gas supply pipe (not shown) for supplying the air-floating gas to be connected to the gas introduction passage 225 (see fig. 3). In practice, the lift cylinder and the exhaust gas collecting ring 30 may be connected to an exhaust gas pump (not shown) for collecting the exhaust gas after reaction.

In general, the position of the lifting cylinder and the exhaust gas collecting ring 30 just blocks the access opening 11 of the reaction chamber 10, so as to prevent the reaction gas in the reaction chamber 10 from flowing out. However, when the lift cylinder and the exhaust gas collecting ring 30 are lowered to the lowest position, the pick-and-place port 11 is opened and the lower plate 22 is lowered to provide a robot arm (not shown) to insert the pick-up substrate 50.

The showerhead 40 is disposed in the reaction chamber 10, and the showerhead 40 communicates with a gas supply line (not shown) to discharge reaction gas. The showerhead 40 passes through a first passage 220 formed at the center of the lower platter 22 and a second passage 230 formed at the center of the upper platter 23 of the substrate carrier 20, so that the substrate carrier 20 can be smoothly lifted.

After the structure of the gas reaction apparatus of the present embodiment is described, please refer to fig. 5 to describe another operation state of the gas reaction apparatus 1 of the present embodiment. In this embodiment, the suspension height of the disk 21 is controlled by the flow rate of the air-floating gas, and the air-floating gas is input to drive the disk 21, so that the disk 21 is suspended and rotated. Meanwhile, the rapid gas flow channel 12 with a height L of only 5 mm is matched with a narrow channel compared with the prior art, so that the flow speed of the reaction gas sprayed by the spray head 40 in the rapid gas flow channel 12 is accelerated. The present embodiment also utilizes the fast gas flow channel 12 to generate high flow rate of the reaction gas, which cooperates with the disk 21 to rotate the substrate 50, so as to improve the uniformity of the film formation on the substrate 50. Meanwhile, the high-speed gas flow can sweep impurities on the substrate 50 to reduce the sedimentation of the impurities, and the narrow fast gas flow channel 12 can improve the gas flow speed, shorten the deposition time, reduce the gas consumption and greatly reduce the manufacturing cost.

To sum up, the utility model discloses quick airflow channel's runner is narrow, can promote the speed of the interior circulation of gas of quick airflow channel, and the cooperation base plate bears the device simultaneously and makes the base plate high-speed rotatory, can promote the degree of consistency that film formed on the wafer by a wide margin, reduces subsiding of reaction intracavity impurity simultaneously, and because of the gas flow rate makes deposition efficiency high soon, can reduce gaseous consumption, reduces the processing procedure cost by a wide margin.

The foregoing description is intended to be illustrative rather than limiting, and it will be appreciated by those skilled in the art that many modifications, variations or equivalents may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A gas reaction device, comprising:

a reaction chamber; and

a substrate bearing device, which is arranged on the upper part in the reaction chamber, and is characterized in that:

a fast airflow channel is formed between the substrate bearing device and the reaction cavity, the height of the fast airflow channel is greater than 0 mm and less than or equal to 5 mm, the substrate bearing device is used for bearing at least one substrate, and the substrate bearing device comprises:

at least one disc with one substrate slot with opened top for the substrate to be set inside with the reaction surface facing downwards and one reaction port below the substrate slot for the reaction surface to be exposed;

a lower large disc, which is provided with at least one disc groove with an open upper part for placing the disc, and a bottom opening is arranged below the disc groove for exposing the reaction surface; and

and the upper large disc covers the upper part of the lower large disc and seals the upper part of the disc groove.

2. The gas reaction device as claimed in claim 1, wherein: the disc groove is provided with an annular groove, the disc is provided with a butt joint part entering the annular groove, and an annular air floatation channel is arranged in the annular groove; the annular air floating channel is connected with an air inlet channel in the tangential direction so as to introduce air floating gas to apply force to the butt joint part to enable the disk to suspend and rotate; the annular groove is connected to a first discharge opening for discharging the air-floating gas.

3. The gas reaction device as claimed in claim 2, wherein: the upper large disc is provided with a second discharge port which is connected with the first discharge port.

4. The gas reaction device as claimed in claim 1, wherein: the edge of the inner wall of the substrate groove is provided with a plurality of bearing fingers for bearing the edge of the substrate, and the top surfaces of the bearing fingers incline towards the center of the substrate groove.

5. The gas reaction device as claimed in claim 1, wherein: the substrate carrying device is arranged in the reaction chamber, and the substrate carrying device is arranged on the lower part of the reaction chamber and is connected with the lower large disc so as to support and drive the substrate carrying device to lift and rotate.

6. The gas reaction device as claimed in claim 5, wherein: the side wall of the reaction cavity is provided with at least one taking and placing opening corresponding to the rapid airflow channel.