CN214627482U

CN214627482U - MOS tube with quick plug-in structure

Info

Publication number: CN214627482U
Application number: CN202120802663.0U
Authority: CN
Inventors: 朱文荣
Original assignee: Shenzhen Kaida Micro Technology Co ltd
Current assignee: Shenzhen Kaida Micro Technology Co ltd
Priority date: 2021-04-20
Filing date: 2021-04-20
Publication date: 2021-11-05
Anticipated expiration: 2031-04-20

Abstract

The utility model discloses a MOS pipe with swift grafting structure, including PCB board and second heating panel, the top of PCB board is equipped with the heat-conducting plate, and the MOS pipe is in one side of heat-conducting plate, and the slide opening has been seted up to one side of heat-conducting plate, and the inside of slide opening is equipped with the connecting rod, and first fixed plate and second fixed plate have been welded respectively at the both ends of connecting rod, and the connecting rod runs through the second heating panel, the outside of connecting rod is equipped with the spring, the welding of one side of heat-conducting plate has the fixed block, the welding of the top of heat-conducting plate has first heating panel. The utility model discloses a set up the second heating panel, promote the second heating panel downwards to make the connecting rod remove thereupon, first fixed plate comes one side of fixed block, thereby makes connecting rod lateral shifting, and the MOS pipe is pushed down to the second heating panel, and drives MOS pipe downstream, and the spring is compressed this moment, thereby makes the second heating panel tightly push down the MOS pipe, drives the MOS pipe on the one hand and descends, pegs graft, is convenient for dispel the heat to MOS pipe 6 simultaneously.

Description

MOS tube with quick plug-in structure

Technical Field

The utility model relates to a MOS manages technical field, especially relates to a MOS pipe with swift grafting structure.

Background

The mos transistor is a metal-oxide-semiconductor (semiconductor) field effect transistor, and is often applied to products such as an inverter power supply, a solar controller, a UPS power supply, and the like, and most of the mos transistors are needed for high-power supply products.

The MOS tubes are usually inserted into the PCB, when the number of MOS tubes to be inserted into the PCB is large, the MOS tubes are inserted one by one, the efficiency is significantly low, and the heat of the MOS tubes is not easily dissipated.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the defects existing in the prior art and providing a MOS tube with a quick plug-in structure.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

the utility model provides a MOS pipe with swift grafting structure, includes PCB board and second heating panel, the top of PCB board is equipped with the heat-conducting plate, and the MOS pipe is in one side of heat-conducting plate, and the slide opening has been seted up to one side of heat-conducting plate, and the inside of slide opening is equipped with the connecting rod, and the welding has first fixed plate and second fixed plate respectively at the both ends of connecting rod, and the connecting rod runs through the second heating panel, the outside of connecting rod is equipped with the spring, the welding of one side of heat-conducting plate has the fixed block.

Furthermore, a first heat dissipation plate is welded at the top end of the heat conduction plate, and a plurality of first heat dissipation fins are welded at the top end of the first heat dissipation plate.

Furthermore, the top of one side of the fixed block is inclined.

Furthermore, one side of the second heat dissipation plate is provided with heat conduction glue.

Furthermore, a plurality of second radiating fins are welded on one side of the second radiating plate.

Furthermore, a supporting plate is arranged at the bottom of one side of the heat conducting plate.

Furthermore, a support rod is welded on one side of the heat conducting plate, and two elastic pieces are welded outside the support rod.

Furthermore, a pressing plate is arranged on one side of the second heat dissipation plate, a first through hole is formed in the top of one side of the pressing plate, and the connecting rod penetrates through the first through hole.

The utility model has the advantages that:

1. the second heat dissipation plate is pushed downwards by arranging the second heat dissipation plate, the connecting rod and the spring, so that the connecting rod moves along with the second heat dissipation plate, the first fixing plate comes to one side of the fixing block, the connecting rod moves transversely, the second heat dissipation plate presses the MOS tube and drives the MOS tube to move downwards, the spring is compressed at the moment, the second heat dissipation plate tightly presses the MOS tube, the MOS tube is driven to descend and be spliced on the one hand, and meanwhile, the heat dissipation of the MOS tube 6 is facilitated;

2. the fixing block with the top at one side being inclined is arranged, so that the first fixing plate can drive the connecting rod to transversely move towards one side, and meanwhile, when the first fixing plate drives the connecting rod to come to the bottom of one side of the fixing block, the first fixing plate is pulled by the spring, so that the connecting rod is fixed;

3. through the arrangement of the heat conducting glue, on one hand, the MOS tube can be fully contacted with the second heat radiating plate to conduct heat, and meanwhile, the MOS tube can move along with the second heat radiating plate when the second heat radiating plate is pushed;

4. through the arrangement of the supporting rod and the elastic sheet, the elastic sheet can clamp and limit the MOS tube, so that the MOS tube can be conveniently inserted;

5. through setting up the clamp plate, when the spring was to the clamp plate application of force, can make the clamp plate push down the second heating panel to promote the spring to the application of force area of second heating panel, thereby promote the stability of second heating panel.

Drawings

Fig. 1 is a schematic cross-sectional structural diagram of an MOS transistor with a quick plug structure in embodiment 1;

fig. 2 is a schematic side cross-sectional structural view of an MOS transistor with a quick plug structure in embodiment 1;

fig. 3 is a schematic side cross-sectional structural view of an MOS transistor with a quick plug structure in embodiment 2.

In the figure: the heat-conducting plate comprises a PCB (printed circuit board) 1, a heat-conducting plate 2, a sliding hole 3, a spring plate 4, a supporting rod 5, an MOS (metal oxide semiconductor) tube 6, a first heat-radiating plate 7, a first heat-radiating fin 8, a fixed block 9, a first fixed plate 10, a connecting rod 11, heat-conducting glue 12, a second heat-radiating plate 13, a second fixed plate 14, a spring 15, a second heat-radiating fin 16, a supporting plate 17 and a pressing plate 18.

Detailed Description

The technical solution of the present patent will be described in further detail with reference to the following embodiments.

Reference will now be made in detail to embodiments of the present patent, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present patent and are not to be construed as limiting the present patent.

In the description of this patent, it is to be understood that the terms "center," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientations and positional relationships indicated in the drawings for the convenience of describing the patent and for the simplicity of description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the patent.

In the description of this patent, it is noted that unless otherwise specifically stated or limited, the terms "mounted," "connected," and "disposed" are to be construed broadly and can include, for example, fixedly connected, disposed, detachably connected, disposed, or integrally connected and disposed. The specific meaning of the above terms in this patent may be understood by those of ordinary skill in the art as appropriate.

Example 1

Referring to fig. 1-2, a MOS transistor with a fast plugging structure includes a PCB 1 and a second heat sink 13, a heat conducting plate 2 is disposed on a top of the PCB 1, the MOS transistor 6 is disposed on one side of the heat conducting plate 2, a sliding hole 3 is disposed on one side of the heat conducting plate 2, a connecting rod 11 is disposed inside the sliding hole 3, a first fixing plate 10 and a second fixing plate 14 are welded to both ends of the connecting rod 11, the connecting rod 11 penetrates the second heat sink 13, a spring 15 is disposed outside the connecting rod 11, a fixing block 9 is welded to one side of the heat conducting plate 2, the second heat sink 13 is pushed downward, so that the connecting rod 11 moves therewith, the first fixing plate 10 comes to one side of the fixing block 9, so that the connecting rod 11 moves laterally, the second heat sink 13 presses the MOS transistor 6 and drives the MOS transistor 6 to move downward, at this time, the spring 15 is compressed, so that the second heat sink 13 tightly presses the MOS transistor 6, on the one hand, the MOS tube 6 is driven to descend for insertion, and meanwhile, the MOS tube 6 is convenient to dissipate heat.

Wherein, the top welding of heat-conducting plate 2 has first heating panel 7, and the top welding of first heating panel 7 has a plurality of first fin 8, can promote the radiating effect of MOS pipe 6 through heat-conducting plate 2, first heating panel 7 and first fin 8.

Wherein, one side top of fixed block 9 is the slope form, and when being convenient for connecting rod 11 moves down, drive connecting rod 11 through first fixed plate 10 and move to one side, when first fixed plate 10 drove connecting rod 11 and come the bottom of fixed block 9 one side simultaneously, first fixed plate 10 was pulled by spring 15 this moment to it is fixed to make connecting rod 11.

One side of the second heat dissipation plate 13 is provided with a heat conducting glue 12, and the heat conducting glue 12 can enable the MOS transistor 6 to be fully contacted with the second heat dissipation plate 13 for conducting heat, and meanwhile, when the second heat dissipation plate 13 is pushed, the MOS transistor 6 can move along with the heat conducting glue 12.

Wherein, a plurality of second radiating fins 16 are welded on one side of the second radiating plate 13, and the second radiating fins 16 can improve the radiating efficiency.

Wherein, one side bottom of heat-conducting plate 2 is equipped with backup pad 17, and backup pad 17 is convenient for support heat-conducting plate 2.

Wherein, the welding of one side of heat-conducting plate 2 has bracing piece 5, and the outside welding of bracing piece 5 has two shell fragments 4, and shell fragment 4 can carry out the centre gripping spacing to MOS pipe 6 to be convenient for peg graft of MOS pipe 6.

The working principle is as follows: the second heat dissipation plate 13 is pushed downwards, so that the connecting rod 11 moves along with the second heat dissipation plate, the first fixing plate 10 comes to one side of the fixing block 9, so that the connecting rod 11 moves transversely, the second heat dissipation plate 13 presses the MOS tube 6 and drives the MOS tube 6 to move downwards, and at the moment, the spring 15 is compressed, so that the second heat dissipation plate 13 tightly presses the MOS tube 6, on one hand, the MOS tube 6 is driven to descend for splicing, and meanwhile, the heat dissipation of the MOS tube 6 is facilitated;

the heat-conducting plate 2, the first heat-radiating plate 7 and the first heat-radiating fins 8 can improve the heat-radiating effect of the MOS tube 6;

the first fixing plate 10 drives the connecting rod 11 to move to one side, and meanwhile, when the first fixing plate 10 drives the connecting rod 11 to come to the bottom of one side of the fixing block 9, the first fixing plate 10 is pulled by the spring 15, so that the connecting rod 11 is fixed;

on one hand, the heat conducting glue 12 can enable the MOS tube 6 to be fully contacted with the second heat dissipation plate 13 for heat conduction, and meanwhile, the MOS tube 6 can move along with the second heat dissipation plate 13 when being pushed;

the second heat sink 16 can improve the heat dissipation efficiency, and the support plate 17 is convenient for supporting the heat conducting plate 2;

the spring plate 4 can clamp and limit the MOS tube 6, so that the MOS tube 6 can be conveniently inserted and connected.

Example 2

Referring to fig. 3, in order to increase the practicability of the device, compared to embodiment 1, in this embodiment, a pressing plate 18 is disposed on one side of the second heat dissipation plate 13, a first through hole is disposed at a top of one side of the pressing plate 18, and the connecting rod 11 penetrates through the first through hole, so that when the spring 15 applies force to the pressing plate 18, the pressing plate 18 presses the second heat dissipation plate 13, thereby increasing the force application area of the spring 15 to the second heat dissipation plate 13, and thus improving the stability of the second heat dissipation plate 13.

the spring plate 4 can clamp and limit the MOS tube 6, so that the MOS tube 6 can be conveniently inserted;

when the spring 15 applies a force to the pressing plate 18, the pressing plate 18 is pressed against the second heat dissipation plate 13, so that the force application area of the spring 15 to the second heat dissipation plate 13 is increased, and the stability of the second heat dissipation plate 13 is improved.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims

1. The utility model provides a MOS pipe with swift grafting structure, includes PCB board (1) and second heating panel (13), its characterized in that, the top of PCB board (1) is equipped with heat-conducting plate (2), and MOS pipe (6) are in one side of heat-conducting plate (2), and slide opening (3) have been seted up to one side of heat-conducting plate (2), and the inside of slide opening (3) is equipped with connecting rod (11), and the both ends of connecting rod (11) are first fixed plate (10) of fixedly connected with and second fixed plate (14) respectively, and connecting rod (11) run through second heating panel (13), the outside of connecting rod (11) is equipped with spring (15), one side fixedly connected with fixed block (9) of heat-conducting plate (2).

2. The MOS transistor with the quick plug-in structure according to claim 1, wherein a first heat dissipation plate (7) is fixedly connected to the top end of the heat conduction plate (2), and a plurality of first heat dissipation fins (8) are fixedly connected to the top end of the first heat dissipation plate (7).

3. The MOS transistor with the quick plug structure as claimed in claim 1, wherein the top of one side of the fixed block (9) is inclined.

4. The MOS transistor with the quick-plugging structure according to claim 1, wherein a heat conducting glue (12) is disposed on one side of the second heat dissipation plate (13).

5. The MOS transistor with the quick plug structure as claimed in claim 1, wherein a plurality of second heat dissipation fins (16) are fixedly connected to one side of the second heat dissipation plate (13).

6. The MOS transistor with the quick plugging structure according to claim 1, wherein a supporting plate (17) is arranged at the bottom of one side of the heat conducting plate (2).

7. The MOS tube with the quick plug-in structure according to claim 1, wherein a support rod (5) is fixedly connected to one side of the heat conducting plate (2), and two elastic sheets (4) are fixedly connected to the outside of the support rod (5).

8. The MOS transistor with the quick plug-in structure according to claim 1, wherein a pressing plate (18) is disposed on one side of the second heat dissipation plate (13), a first through hole is formed in a top portion of one side of the pressing plate (18), and the connecting rod (11) penetrates through the first through hole.