CN214626936U - High-power microwave electromagnetic pulse protection device - Google Patents
High-power microwave electromagnetic pulse protection device Download PDFInfo
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- CN214626936U CN214626936U CN202120106237.3U CN202120106237U CN214626936U CN 214626936 U CN214626936 U CN 214626936U CN 202120106237 U CN202120106237 U CN 202120106237U CN 214626936 U CN214626936 U CN 214626936U
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- microstrip line
- resonant circuit
- amplitude limiting
- limiting diode
- stage resonant
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Abstract
The utility model discloses a high power microwave electromagnetic pulse protector, including locating three resonant circuit of group on the medium substrate, three resonant circuit of group wherein include resonant frequency by high first order resonant circuit to low, second level resonant circuit and third level resonant circuit, connect through microstrip line b between first order resonant circuit and the second level resonant circuit, connect through microstrip line c between second level resonant circuit and the third level resonant circuit, still be equipped with microstrip line an and microstrip line d on the medium substrate, microstrip line an's one end is connected with signal input part, microstrip line an's the other end and first level resonant circuit are connected, microstrip line d's one end and signal output part are connected, microstrip line d's the other end and third level resonant circuit are connected. The utility model discloses a tertiary resonant circuit is a resonant circuit of the parallelly connected microstrip line constitution of each level amplitude limiting diode promptly, then parallelly connected tertiary resonant circuit through parallelly connecting, and the middle quarter wavelength microstrip line that establishes ties has improved protector's bandwidth.
Description
Technical Field
The utility model relates to an interference protection technical field especially relates to a high power microwave electromagnetic pulse protector.
Background
The high-power microwave electromagnetic pulse is a strong electromagnetic pulse with the working frequency range of 300MHz-300GHz and the peak power of more than 100 MW. High-power microwave electromagnetic pulses can enter an electronic system through the coupling of a front door or a rear door to generate a transient high-voltage strong field, so that the performance of the electronic system is seriously influenced. The PIN amplitude limiting diode is used as an important protective device of a front-end channel of the radio frequency receiver and can be used for preventing the radio frequency receiving system from being damaged by strong electromagnetic interference.
The main physical parameters of the PIN diode comprise the thickness and the area of an I layer, the larger the thickness of the I layer is, the larger the voltage of the PIN diode for avalanche breakdown is, and the larger the power the PIN diode can bear; however, the time for the carriers to transit the I layer becomes longer and the spike leakage becomes more severe. When the thickness of the I layer is fixed, the larger the area of the I region is, the stronger the power dissipation capacity of the tube is, and the high-power tolerance capacity of the tube is naturally improved, but the larger the junction capacitance value of the PIN diode is, so that the area of the I layer of the PIN diode determines the highest frequency of the amplitude limiting diode, the larger junction capacitance can reduce the cut-off frequency of the PIN diode, and the working frequency of the amplitude limiting circuit is limited.
In high-power microwave electromagnetic pulse protection, a protective device is generally connected in parallel on a signal line, and in a protective circuit, in order to achieve high input power and low amplitude limiting output, a plurality of stages of amplitude limiting devices are combined together to achieve the requirement; the front stage can bear high power, the rear stage realizes low-power amplitude limiting output, and the low-power amplitude limiting output is realized by matching the multiple stages of protective devices. However, the junction capacitance is also increased after the number of stages of the amplitude limiting device is increased, and at the moment, the capacitance of the protection module is increased, so that the insertion loss of the module is increased, signal transmission is influenced, and the higher frequency application of the amplitude limiting device is further limited.
SUMMERY OF THE UTILITY MODEL
The utility model provides a high power microwave electromagnetic pulse protector has solved the problem that the big PIN amplitude limiting diode application frequency range of I layer thickness is low among the prior art.
In order to achieve the above object, the utility model adopts the following technical scheme:
a high-power microwave electromagnetic pulse protection device comprises three groups of resonant circuits arranged on a medium substrate, wherein the three groups of resonant circuits comprise a first-stage resonant circuit, a second-stage resonant circuit and a third-stage resonant circuit, the resonant frequencies of the first-stage resonant circuit, the second-stage resonant circuit and the third-stage resonant circuit are from high to low, the first-stage resonant circuit and the second-stage resonant circuit are connected through a microstrip line b, the second-stage resonant circuit and the third-stage resonant circuit are connected through a microstrip line c, the length of the microstrip line b is one-quarter wavelength of the resonant frequency of the first-stage resonant circuit, and the length of the microstrip line c is one-quarter wavelength of the resonant frequency of the second-stage resonant circuit;
the dielectric substrate is further provided with a microstrip line a and a microstrip line d, one end of the microstrip line a is connected with a signal input end, the other end of the microstrip line a is connected with the first-stage resonant circuit, one end of the microstrip line d is connected with a signal output end, and the other end of the microstrip line d is connected with the third-stage resonant circuit.
Optionally, the first-stage resonant circuit includes a PIN limiter diode D1 and a microstrip line e connected in parallel with the PIN limiter diode D1, the microstrip line a is connected to one end of the PIN limiter diode D1 and one end of the microstrip line e, and the other end of the PIN limiter diode D1 and the other end of the microstrip line e are grounded through a first combined via hole formed in the dielectric substrate.
Optionally, the second-stage resonant circuit includes a PIN limiter diode D2 and a microstrip line f connected in parallel with the PIN limiter diode D2, the microstrip line b is connected to one end of the PIN limiter diode D2 and one end of the microstrip line f, and the other end of the PIN limiter diode D2 and the other end of the microstrip line b are grounded through a second combined via hole formed in the dielectric substrate.
Optionally, the third-stage resonant circuit includes a PIN limiter diode D3 and a microstrip line g connected in parallel with the PIN limiter diode D3, the microstrip line c is connected to one end of the PIN limiter diode D3 and one end of the microstrip line g, and the other end of the PIN limiter diode D3 and the other end of the microstrip line c are grounded through a third combined via hole formed in the dielectric substrate.
Optionally, first combination via hole the second combination via hole with the third combination via hole all has four ground holes, and three ground holes set up side by side in every group, and another ground hole sets up under three ground hole central point puts, the downthehole soldering tin that fills of ground hole, the ground hole that is located central point puts is formed with the pad, PIN amplitude limiting diode D1 PIN amplitude limiting diode D2 with PIN amplitude limiting diode D3 passes through pad ground connection, microstrip line e microstrip line f with microstrip line g passes through other via hole ground connections.
Optionally, the medium substrate is a polytetrafluoroethylene glass fiber copper-clad plate.
Optionally, radio frequency coaxial connectors are respectively installed at the signal input end and the signal output end, and each radio frequency coaxial connector includes an SMA type radio frequency coaxial connector, and the SMA type radio frequency coaxial connectors are respectively connected with the microstrip line a and the microstrip line d.
Optionally, a plurality of via holes are further formed on two sides of the microstrip line a, the microstrip line b, the microstrip line c and the microstrip line d.
Compared with the prior art, the utility model, the technological progress who gains lies in:
the utility model adopts the method that the amplitude limiting diode and a microstrip line form parallel resonance to reduce the loss under high frequency, improves the application of the amplitude limiting diode in high frequency, and can improve the application frequency of the original amplitude limiting device to 1 to 5 frequency doubling (1 to 5 are real numbers) through design; the utility model discloses a tertiary resonant circuit, resonant circuit is constituteed to parallelly connected a microstrip line of PIN amplitude limiting diode of each level promptly, then parallelly connected tertiary resonant circuit through parallelly connecting, and the middle quarter wavelength microstrip line that establishes ties has improved protector's bandwidth. The device adopts large-area grounding, reduces grounding resistance, solves the problems of high-energy reflection and quick discharge of high-power microwave electromagnetic pulse, and improves the survival capability of protected equipment.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention.
In the drawings:
fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments. Embodiments of the present invention will be described below with reference to the accompanying drawings.
As shown in fig. 1, the utility model discloses a high power microwave electromagnetic pulse protector, this device accessible common fixed mode is fixed on electronic equipment's casing, it is concrete, this device is including locating three resonant circuit of group on the medium substrate, the medium substrate is polytetrafluoroethylene glass fiber copper-clad plate in this embodiment, PTFE copper-clad plate promptly, this kind of medium substrate has the heat resistance good, the medium is even, transmission to high frequency signal has the advantage that the loss is low, in this embodiment, PTFE copper-clad plate thickness is 0.5mm, the dielectric constant is 2.6, the back of PTFE copper-clad plate is bare copper, adopt environmental protection water gold technology to handle, via hole messenger PTFE copper-clad plate large tracts of land that distributes on the PTFE copper-clad plate is through PTFE copper-clad plate.
The three groups of resonant circuits comprise three stages of resonant circuits with resonant frequencies from high to low, and comprise a first-stage resonant circuit 1, a second-stage resonant circuit 2 and a third-stage resonant circuit 3, wherein the first-stage resonant circuit 1 is connected with the second-stage resonant circuit 2 through a microstrip line b, and the second-stage resonant circuit 2 is connected with the third-stage resonant circuit 3 through a microstrip line c. The line width of the microstrip line b is determined by the resonance frequency of the first-stage resonance circuit 1, and the length is a quarter wavelength of the first-stage resonance frequency, the line width of the microstrip line c is determined by the resonance frequency of the second-stage resonance circuit 2, and the length is a quarter wavelength of the second-stage resonance frequency.
And a microstrip line a and a microstrip line d are further arranged on the PTFE copper-clad plate, one end of the microstrip line a is connected with the signal input end, the other end of the microstrip line a is connected with the first-stage resonant circuit 1, one end of the microstrip line d is connected with the signal output end, and the other end of the microstrip line d is connected with the third-stage resonant circuit 3. The characteristic impedance of the microstrip line a is 50 Ω, and the line width of the microstrip line a is determined by the resonance frequency of the first-stage resonance circuit 1. The characteristic impedance of the microstrip line d is 50 Ω, the line width of the microstrip line d is determined by the resonance frequency of the third-stage resonance circuit 3, and the length is one-quarter wavelength of the resonance frequency of the third-stage resonance circuit 3. Through holes are formed in the two sides of the microstrip line a, the microstrip line b, the microstrip line c and the microstrip line d, radiation of transmission signals of the transmission microstrip lines can be reduced, the aperture is 0.8mm, the distance between the two through holes is 10mm, and the distance between the dielectric substrate and the shell is increased.
Specifically, the first-stage resonant circuit 1 includes a PIN limiter diode D1 and a microstrip line e connected in parallel with the PIN limiter diode D1, a line width of the microstrip line e is determined by a resonant frequency of the first-stage resonant circuit 1, and a length of the microstrip line e is obtained by an inductance value determined by a junction capacitance of the PIN limiter diode D1 and the resonant frequency of the first-stage resonant circuit 1. The microstrip line a is respectively connected with one end of the PIN amplitude limiting diode D1 and one end of the microstrip line e, and the other end of the PIN amplitude limiting diode D1 and the other end of the microstrip line e are grounded through a first combined through hole arranged on the dielectric substrate.
The second-stage resonant circuit 2 comprises a PIN clipping diode D2 and a microstrip line f connected in parallel with the PIN clipping diode D2, the line width of the microstrip line f is determined by the resonant frequency of the second-stage resonant circuit 2, and the length of the microstrip line f is obtained by the inductance value determined by the junction capacitance of the PIN clipping diode D2 and the resonant frequency of the second-stage resonant circuit 2. The microstrip line b is connected with one end of the PIN amplitude limiting diode D2 and one end of the microstrip line f respectively, and the other end of the PIN amplitude limiting diode D2 and the other end of the microstrip line b are grounded through a second combined through hole arranged on the dielectric substrate.
The third-stage resonant circuit 3 comprises a PIN clipping diode D3 and a microstrip line g connected in parallel with the PIN clipping diode D3, the line width of the microstrip line g is determined by the resonant frequency of the third-stage resonant circuit 3, and the length of the microstrip line g is obtained by the inductance value determined by the junction capacitance of the PIN clipping diode D3 and the resonant frequency of the third-stage resonant circuit 3. The microstrip line c is respectively connected with one end of the PIN amplitude limiting diode D3 and one end of the microstrip line g, and the other end of the PIN amplitude limiting diode D3 and the other end of the microstrip line c are grounded through a third combined through hole arranged on the dielectric substrate.
The first combined via hole, the second combined via hole and the third combined via hole are all provided with four grounding holes, the aperture of the four grounding holes is 0.5mm, three grounding holes in each group are arranged side by side to form a line, the distance between the circle centers of the three via holes is 3mm, the other grounding hole is arranged right below the central position of the three grounding holes and is vertical to the line formed by the three via holes, the distance between the circle centers of the via holes and the central grounding hole is 3mm, a square pad with the width of 2mm is made by taking the circle center of the central grounding hole as the original point, and each via hole is filled with soldering tin, so that the current capacity of the via hole is improved, the grounding area is increased, the PIN amplitude limiting diode D1, the PIN amplitude limiting diode D2 and the PIN amplitude limiting diode D3 are grounded through the pad, the microstrip line e, the microstrip line f and the microstrip line g are grounded through other via holes, in the present embodiment, the microstrip line e, the microstrip line f, and the microstrip line g are grounded through a remaining via.
The radio frequency coaxial connectors are respectively installed at the signal input end and the signal output end, in the embodiment, the radio frequency coaxial connectors are SMA type radio frequency coaxial connectors which are respectively connected with the microstrip line a and the microstrip line d, after the PTFE copper-clad plate is processed according to the requirements, the device is welded on a shell of electronic equipment, contact pins of two SMA type radio frequency coaxial connector joints are welded to the input end and the output end of the PTFE copper-clad plate, and the contact pins of the SMA type radio frequency coaxial connector joints are fixed on the shell through bolts by using cover plates.
The utility model discloses a working process does:
the utility model discloses a frequency application that the mode of resonance improves PIN amplitude limiting diode, and the device bandwidth is improved to specific mode that adopts hierarchical resonance, according to revealing power, adopts the mode that the power ladder descends, adopts hierarchical combination protection mode to be tertiary altogether with the device:
the PIN amplitude limiting diode D1 and the microstrip line e are a first-stage resonant circuit 1, which is used for enduring high-power and high-voltage input, but has high leakage;
the PIN amplitude limiting diode D2 and the microstrip line f are a second-stage resonant circuit 2, the second-stage resonant frequency is higher than the first-stage resonant frequency, the tolerant power is lower, and the leakage power is also lower;
PIN amplitude limiting diode D3 is third level resonant circuit 3 with microstrip line g, and third level resonant frequency is higher than second level resonant frequency, and the power of tolerating is the lowest, nevertheless leaks lowly, can control the voltage range that the later stage can be born by the protection device with leaking, makes the later stage device obtain the protection.
When the device works normally, normal signals are transmitted normally through the input end of the device, and because the circuit is in a high-impedance state to the normal signals under the combined action of the resonance of the amplitude limiter and the microstrip line, the device is equivalent to an open circuit, and the normal signals do not pass through the resonant circuits of all stages.
When the high-power microwave electromagnetic pulse comes, the PIN clipping diode D3 is low in starting voltage and is started firstly, and due to the action of a quarter-wavelength microstrip line in front of the PIN clipping diode D3 in design, the starting of the PIN clipping diode D2 is accelerated, and similarly, the PIN clipping diode D1 is also quickly started, so that the purpose of restraining the high-power microwave electromagnetic pulse is achieved through the combination and the gradual energy division.
Specifically, in this embodiment, the parameters of each microstrip line are as follows:
the width of the microstrip line 1 is 1.34mm, and the length is 20 mm;
the width of the microstrip line 2 is 1.30mm, and the length is 14.6 mm;
the width of the microstrip line 3 is 1.25mm, and the length is 12.8 mm;
the width of the microstrip line 4 is 1.30mm, and the length is 20 mm;
the width of the microstrip line 5 is 1.34mm, and the length is 8 mm;
the microstrip line 6 has a width of 1.3mm and a length of 12 mm;
the microstrip line 7 has a width of 1.25mm and a length of 15 mm.
The protection capability in the implementation is as follows:
bandwidth: 3GHz-4 GHz; inserting loss: less than 1 dB; port impedance: 50 omega; interface form: SMA-K; voltage standing wave ratio: less than 1.5; input power: 100W; leakage power: 0.1W.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the protection of the claims of the present invention.
Claims (8)
1. A high-power microwave electromagnetic pulse protection device is characterized by comprising three groups of resonant circuits arranged on a medium substrate, wherein the three groups of resonant circuits comprise a first-stage resonant circuit, a second-stage resonant circuit and a third-stage resonant circuit, the resonant frequencies of the first-stage resonant circuit, the second-stage resonant circuit and the third-stage resonant circuit are from high to low, the first-stage resonant circuit and the second-stage resonant circuit are connected through a microstrip line b, the second-stage resonant circuit and the third-stage resonant circuit are connected through a microstrip line c, the length of the microstrip line b is one-quarter wavelength of the resonant frequency of the first-stage resonant circuit, and the length of the microstrip line c is one-quarter wavelength of the resonant frequency of the second-stage resonant circuit;
the dielectric substrate is further provided with a microstrip line a and a microstrip line d, one end of the microstrip line a is connected with a signal input end, the other end of the microstrip line a is connected with the first-stage resonant circuit, one end of the microstrip line d is connected with a signal output end, and the other end of the microstrip line d is connected with the third-stage resonant circuit.
2. The high power microwave electromagnetic pulse protection device of claim 1, wherein: the first-stage resonant circuit comprises a PIN amplitude limiting diode D1 and a microstrip line e connected with the PIN amplitude limiting diode D1 in parallel, the microstrip line a is connected with one end of the PIN amplitude limiting diode D1 and one end of the microstrip line e respectively, and the other end of the PIN amplitude limiting diode D1 and the other end of the microstrip line e are grounded through a first combined through hole formed in the medium substrate.
3. The high power microwave electromagnetic pulse protection device of claim 2, wherein: the second-stage resonant circuit comprises a PIN amplitude limiting diode D2 and a microstrip line f connected with the PIN amplitude limiting diode D2 in parallel, the microstrip line b is connected with one end of the PIN amplitude limiting diode D2 and one end of the microstrip line f respectively, and the other end of the PIN amplitude limiting diode D2 and the other end of the microstrip line b are grounded through a second combined through hole formed in the dielectric substrate.
4. A high power microwave electromagnetic pulse protection device according to claim 3, characterized in that: the third-stage resonant circuit comprises a PIN amplitude limiting diode D3 and a microstrip line g connected with the PIN amplitude limiting diode D3 in parallel, the microstrip line c is connected with one end of the PIN amplitude limiting diode D3 and one end of the microstrip line g respectively, and the other end of the PIN amplitude limiting diode D3 and the other end of the microstrip line c are grounded through a third combined via hole formed in the medium substrate.
5. The high power microwave electromagnetic pulse protection device of claim 4, wherein: first combination via hole second combination via hole and third combination via hole all have four ground holes, and three ground hole sets up side by side in every group, and another ground hole sets up under three ground hole central point puts, the downthehole soldering tin that fills of ground hole, the ground hole that is located central point and puts is formed with the pad, PIN amplitude limiting diode D1 PIN amplitude limiting diode D2 with PIN amplitude limiting diode D3 passes through pad ground connection, microstrip line e microstrip line f with microstrip line g passes through other via hole ground connections.
6. A high power microwave electromagnetic pulse protection device according to any one of claims 1 to 5, characterized in that: the medium substrate is a polytetrafluoroethylene glass fiber copper-clad plate.
7. The high power microwave electromagnetic pulse protection device of claim 6, wherein: radio frequency coaxial connectors are respectively installed at the signal input end and the signal output end, the radio frequency coaxial connectors comprise SMA type radio frequency coaxial connectors, and the SMA type radio frequency coaxial connectors are respectively connected with the microstrip line a and the microstrip line d.
8. The high power microwave electromagnetic pulse protection device of claim 7, wherein: and a plurality of through holes are also formed on two sides of the microstrip line a, the microstrip line b, the microstrip line c and the microstrip line d.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202120106237.3U CN214626936U (en) | 2021-01-14 | 2021-01-14 | High-power microwave electromagnetic pulse protection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120106237.3U CN214626936U (en) | 2021-01-14 | 2021-01-14 | High-power microwave electromagnetic pulse protection device |
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| CN214626936U true CN214626936U (en) | 2021-11-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114123149A (en) * | 2021-11-26 | 2022-03-01 | 上海创远仪器技术股份有限公司 | Circuit structure for realizing enhanced port electrostatic protection |
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2021
- 2021-01-14 CN CN202120106237.3U patent/CN214626936U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114123149A (en) * | 2021-11-26 | 2022-03-01 | 上海创远仪器技术股份有限公司 | Circuit structure for realizing enhanced port electrostatic protection |
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