CN214623298U - Two-photon three-dimensional photoetching device - Google Patents
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- CN214623298U CN214623298U CN202120618113.3U CN202120618113U CN214623298U CN 214623298 U CN214623298 U CN 214623298U CN 202120618113 U CN202120618113 U CN 202120618113U CN 214623298 U CN214623298 U CN 214623298U
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Abstract
The utility model discloses a two-photon three-dimensional photoetching device, which comprises a light source module, wherein a first light path and a second light path with different wavelengths are arranged on the light source module, and a dispersion compensator is respectively arranged on the first light path and the second light path; the spatial light modulation module is used for respectively modulating the first light path and the second light path to generate a first light intensity distribution graph and a second light intensity distribution graph; the projection module images the first light intensity distribution graph and the second light intensity distribution graph generated by the spatial light modulation module on a focal plane of the objective lens; the displacement module is used for three-dimensional scanning and photoetching of the photoresist, and the first light intensity distribution graph and the second light intensity distribution graph are partially overlapped and focused in the photoresist to carry out photoetching on the photoresist; and the computer is used for controlling the dispersion compensator, the spatial light modulation module and the displacement module. The two-photon three-dimensional photoetching device adopts a surface projection photoetching technology, and improves the longitudinal processing precision through the technologies of 'space-time light sheet superposition' and 'real-time dispersion compensation'.
Description
Technical Field
The utility model belongs to the technical field of 3D vibration material disk prints and laser receives processing technique a little, especially relates to a two-photon three-dimensional lithography apparatus.
Background
With the rapid development of the application fields of electronic chips, micro-nano optics, micro-electro-mechanical systems and the like, the lithography technology also faces new requirements, new targets and new challenges, such as nano-precision, super-large size, complex 3D structures and the like. The traditional photoetching technology generally adopts short-wavelength laser to initiate a single photon effect in photoresist, and the size of a laser spot is limited by an optical diffraction limit, so that the precision of micro-nano processing is also limited. With increasing accuracy requirements, increasingly expensive euv wavelength light sources and optical systems are required.
Compared with the single photon effect, the two-photon polymerization effect has a nonlinear threshold value, the size of an effective light spot can be greatly reduced, so that the processing precision is improved, the two-photon effect only occurs at a laser focus reaching the threshold value, and other areas of a light beam path are transparent, so that the complex 3D micro-nano processing becomes possible. Two-photon lithography techniques can be classified into three categories, point scanning, surface projection, and volume molding, depending on the volume element to be processed. The point scanning is also called laser direct writing, a 3D object is decomposed into a limited number of points, one or more beams of laser are sequentially scanned, and the two-photon polymerization effect is excited to realize micro-nano processing. And the surface projection is to decompose the 3D object into a limited number of sections, and the micro-nano structure is obtained by sequentially and dynamically projecting and curing each section through two-photon polymerization. And the body forming is to directly realize the processing and forming of the 3D object by utilizing the holographic interference effect or the computed tomography principle. The point scanning laser direct writing technology has high processing precision (dozens of nanometers), but has the obvious defect of low processing speed, and is difficult to process large-size micro-nano devices. The body forming technology has extremely high processing speed, but the processing structure is limited, and the processing precision is low (hundreds of microns). Compared with the former two, the processing precision and speed of the surface projection technology are more balanced, the latest space-time focusing technology is adopted, the transverse processing precision is hundreds of nanometers, and the longitudinal (depth direction) precision is poorer (a few micrometers).
The complex 3D micro-nano structure can be processed and manufactured by utilizing the two-photon photoetching technology, but the following defects exist: 1. the processing speed of point scanning laser direct writing is slow, and the processing method is not suitable for processing large-size micro-nano devices; 2. the body forming technology has high processing speed, but the processing structure is limited, and the processing precision is low; 3. the processing precision and speed of the surface projection technology are relatively balanced, but the longitudinal processing precision is poor.
At present, the thickness of a photoresist layer is generally controlled by spin coating in the longitudinal (depth direction) processing precision, and when a 3D structure is processed, the processes of spin coating, exposure and etching need to be repeated for many times, so that the process is complex.
Therefore, the existing method is difficult to simultaneously consider the processing speed and the processing precision, and the complex 3D micro-nano structure manufactured with high efficiency, high precision and low cost is also considered to be an international difficult problem.
Disclosure of Invention
The utility model aims at providing a two-photon three-dimensional lithography apparatus of high efficiency, high accuracy adopts the surface projection technique to guarantee process velocity, based on the non-degeneracy two-photon polymerization effect of double-colored femto second laser excitation, improves vertical machining precision through "space-time slide stack" and "real-time dispersion compensation" technique, solves the relatively poor technical problem of the vertical machining precision of surface projection technique.
In order to solve the above technical problem, the utility model provides a two-photon three-dimensional lithography device, include:
the optical source module comprises a first optical path and a second optical path which have different wavelengths, wherein the first optical path and the second optical path are respectively provided with a dispersion compensator which is used for pre-compensating laser pulse dispersion in the first optical path and the second optical path;
the spatial light modulation module is used for respectively modulating the first light path and the second light path to generate a first light intensity distribution graph and a second light intensity distribution graph;
the projection module images the first light intensity distribution graph and the second light intensity distribution graph generated by the spatial light modulation module on a focal plane of the objective lens;
the displacement module is used for three-dimensional scanning and photoetching of the photoresist, and the first light intensity distribution graph and the second light intensity distribution graph are partially overlapped and focused in the photoresist to carry out photoetching on the photoresist;
and the computer is used for controlling the dispersion compensator, the spatial light modulation module and the displacement module.
In an optional embodiment, the displacement module comprises a displacement platform and a glass slide, wherein the glass slide is provided with photoresist and is connected with the displacement platform, and the displacement platform is controlled by the control module.
In an alternative embodiment, the displacement module has a detection device comprising:
a lens for collecting the detected light image;
the detector detects the thickness of the photoresist in real time, feeds back the dispersion compensator and adjusts the dispersion compensation amount in real time;
an illumination light source for detecting illumination.
In an optional embodiment, the first optical path and the second optical path further include a power control element and a 4F lens group, and the power control element is disposed on an input optical path of the 4F lens group.
In an alternative embodiment, the power control element comprises a half-wave plate and a polarizing beam splitter, the polarizing beam splitter being arranged in an output optical path of the half-wave plate, and the 4F lens group being arranged in an output optical path of the polarizing beam splitter.
In an optional embodiment, the first optical path and the second optical path further comprise beam shapers for converting the gaussian spot into a flat-topped spot with uniform light intensity distribution.
In an optional embodiment, the spatial light modulation module includes a mirror, a spatial light modulator, and a polarization element, the mirror is used for adjusting the beam angles of the first optical path and the second optical path, the spatial light modulator modulates the first optical path and the second optical path respectively to generate a first light intensity distribution diagram and a second light intensity distribution diagram, and the polarization element adjusts the polarization states of the beams of the first optical path and the second optical path.
In an optional embodiment, the polarization element is a wave plate, including a quarter wave plate and/or a half wave plate, and the second wave plate includes a quarter wave plate and/or a half wave plate.
In an alternative embodiment, the spatial light modulator is an LCOS, DMD or LCD.
In an optional embodiment, the projection module further includes a first dichroic mirror configured to reflect the laser light in the first optical path and transmit the laser light in the second optical path, and a second dichroic mirror configured to reflect the laser light in the second optical path.
The utility model provides a two-photon three-dimensional photoetching device, include:
the optical module comprises a first optical path and a second optical path which have different wavelengths, wherein the first optical path and the second optical path are respectively provided with a dispersion compensator;
the spatial light modulation module is used for respectively modulating the first light path and the second light path to generate a first light intensity distribution graph and a second light intensity distribution graph;
the projection module images the first light intensity distribution graph and the second light intensity distribution graph generated by the spatial light modulation module on a focal plane of the objective lens;
the displacement module is used for three-dimensional scanning and photoetching of the photoresist, and the first light intensity distribution graph and the second light intensity distribution graph are partially overlapped and focused in the photoresist to carry out photoetching on the photoresist;
and the computer is used for controlling the dispersion compensator, the spatial light modulation module and the displacement module.
The two-photon three-dimensional photoetching device adopts a surface projection photoetching technology, improves the longitudinal processing precision through the technologies of 'space-time light sheet superposition' and 'real-time dispersion compensation' on the basis of the non-degenerate two-photon polymerization effect excited by bicolor femtosecond laser, and solves the technical problem of poor longitudinal processing precision of the surface projection technology.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of the space-time focusing technique.
Fig. 2 is a structural diagram of a two-photon three-dimensional lithography apparatus according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a "spatiotemporal slide stacking" technique provided in an embodiment of the present application.
Fig. 4 is a schematic diagram of a micro-nano projection lithography process provided in an embodiment of the present application.
Detailed Description
The two-photon polymerization effect has a very high nonlinear threshold and needs to be excited by femtosecond pulse light with high peak power. In a two-photon surface projection lithography system, a femtosecond laser beam is filtered, expanded and shaped to uniformly irradiate a spatial light modulator (such as LCoS, DMD, LCD and the like) and generate a required spatial light intensity distribution image through modulation. The image is miniature by the projection lens and imaged on the objective focal plane in the photoresist. On the laser propagation path, there is dispersion in lenses, spatial light modulators, objective lenses, photoresists, etc., and the pulse width of the femtosecond laser varies with the amount of dispersion experienced. Based on this, the narrowest pulse width at the focal plane can be achieved using spatio-temporal focusing techniques, thereby improving the machining accuracy, as shown in fig. 1. The opposite dispersion amount is compensated in advance, so that the pulse width of the femtosecond laser when reaching the focal plane of the objective lens is the narrowest, and the pulse peak power just exceeds the threshold of the two-photon effect, so that the two-photon polymerization effect can be excited; in other areas of the photoresist, laser pulse is widened due to incomplete compensation of dispersion, peak power is reduced, and a two-photon polymerization effect cannot be excited. Therefore, by controlling the pulse width in the time domain, a spatial slice (where the pulse width is the narrowest) perpendicular to the propagation direction of the laser can be formed, which is called a spatio-temporal slide. When the light sheet is superposed with the focal plane of the objective lens, the processing precision of the two-photon plane projection photoetching is highest. The thickness of the space-time polished section determines the longitudinal processing precision, the thickness value is the product h of the threshold pulse width and the propagation speed of the femtosecond laser, wherein h is the thickness of the space-time polished section, τ is the pulse width reaching the threshold, c is the light speed, and n is the refractive index of the photoresist. Typically, the threshold pulse width is tens of femtoseconds, the photoresist refractive index is about 1.5, and the optical sheet thickness is about several microns, limiting the longitudinal processing accuracy. On the other hand, in the layer-by-layer projection lithography process, the pulse width of the femtosecond laser becomes wider as the photoresist layer becomes thinner, and the spatio-temporal film also becomes thicker, resulting in deterioration of longitudinal processing accuracy.
In order to improve the longitudinal processing precision of the surface projection technology, two beams of femtosecond lasers with different wavelengths are used as a micro-nano processing light source, the chromatic dispersion experienced by the two beams of femtosecond lasers is respectively controlled, and two light sheets (with the narrowest pulse width) are formed near the focal plane of an objective lens. The two optical sheets are partially overlapped, the non-degenerate two-photon effect can be excited in a partial overlapping area, and the partial overlapping area is far smaller than the thickness of a single optical sheet, so that the method for superposing the space-time optical sheets can greatly improve the longitudinal processing precision.
Therefore, the two-photon three-dimensional photoetching device provided by the application can not only ensure the processing efficiency, but also greatly improve the longitudinal processing precision.
In order to make the technical field better understand the solution of the present invention, the following detailed description of the present invention is provided with reference to the accompanying drawings and the detailed description. It is to be understood that the embodiments described are only some embodiments of the invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
As shown in fig. 2, fig. 2 is a schematic structural diagram of a two-photon three-dimensional lithography apparatus according to an embodiment of the present application, where the two-photon three-dimensional lithography apparatus may include:
the optical source module comprises a first optical path and a second optical path which have different wavelengths, wherein the first optical path and the second optical path are respectively provided with a dispersion compensator which is used for pre-compensating laser pulse dispersion in the first optical path and the second optical path;
the spatial light modulation module is used for respectively modulating the first light path and the second light path to generate a first light intensity distribution graph and a second light intensity distribution graph;
the projection module images the first light intensity distribution graph and the second light intensity distribution graph generated by the spatial light modulation module on a focal plane of the objective lens;
the displacement module is used for three-dimensional scanning and photoetching of the photoresist, and the first light intensity distribution graph and the second light intensity distribution graph are partially overlapped and focused in the photoresist to carry out photoetching on the photoresist;
and the computer is used for controlling the dispersion compensator, the spatial light modulation module and the displacement module.
The light source of this embodiment is a femtosecond laser, and the dispersion compensator may be a time lens, a grating, or the like, and is not particularly limited herein.
Based on FIG. 2, it can be determined that a two-photon three-dimensional lithographic apparatus provided herein uses a two-color femtosecond laser to excite a non-degenerate two-photon polymerization effect, compared to conventional lithography methods using a degenerate two-photon effect. For the degenerate two-photon polymerization effect, the photoinitiator in the photoresist instantaneously absorbs two photons (ω) of the same frequency1＝ω2) The polymer is transited from the ground state S0 to the excited state S1, and then forms free radicals through non-radiative transition, and the free radicals cause the polymerization and solidification of the polymer monomer. Whereas for the non-degenerate two-photon polymerization effect the two photons absorbed by the photoinitiator differ in frequency (ω)1≠ω2) But also generate free radicals and cause the monomers to cure by polymerization. Two beams of femtosecond lasers with different wavelengths are adopted as micro-nano processing light sources, and the laser wavelength is lambda1And λ2Respectively corresponding to the desired photon frequency omega for the non-degenerate effect1And ω2. The dispersion experienced by the two femtosecond lasers is controlled separately to form two optical sheets (with the narrowest pulse width) near the focal plane of the objective lens, as shown in fig. 3. In the overlapping area of the light sheets, the peak power reaches the threshold condition of exciting the nondegenerate two-photon effect, and the area is an effective excitation area; and the other areas can not excite the two-photon effect and can not cause the polymerization and curing of the monomer. The thickness of the effective excitation area is the sum value of two optical sheets (the intersection and overlapping area of the two optical sheets) and can be far thinner than the thickness of a single optical sheet, so the 'space-time optical sheet superposition' technology can greatly improve the longitudinal processing precision.
FIG. 3 is a schematic diagram of the technical effect of "temporal-spatial light sheet superposition" in the present invention, as shown in FIG. 3, the laser wavelength λ1And λ2Respectively corresponding to the desired photon frequency omega for the non-degenerate effect1And ω2. Respectively controlling the chromatic dispersion experienced by the two beams of femtosecond lasers, forming an optical sheet 11 and an optical sheet 12 near the focal plane of the objective lens, wherein the optical sheet 11 and the optical sheet 12 are partially overlapped, photons with different frequencies exist in an overlapping area 13, and the pulse peak power reaches the threshold condition of exciting the nondegenerate two-photon effect in the overlapping area 13 and is an effective excitation area; and the other areas can not excite the two-photon effect and can not cause the polymerization and curing of the monomer. The effective excitation area is the overlapping area 13, which can be much thinner than the thickness of a single optical sheet (11 or 12), so the 'space-time optical sheet overlapping' technology can greatly improve the longitudinal processing precision.
It should be noted that although the utility model discloses a carry out the lithography of receiving a little based on nondegenerate two photon effect principle, only adopt two way light beams promptly, this does not represent the utility model discloses only can be two way light beams, based on same photoetching method, adopt multichannel light beam (multiphoton effect) also the scope of protection of the utility model.
Specifically, as shown in fig. 2, the light source module includes a first optical path and a second optical path, the first optical path is sequentially provided with a first femtosecond laser 101, a first dispersion compensator 103, a half-wave plate 105, a polarization beam splitter 107, a lens 109, a lens 113, and a first beam shaper 115, the first dispersion compensator 103 is used for pre-compensating the laser beam λ1Pulse dispersion; a half-wave plate 105 and a polarizing beam splitter 107 for adjusting the output power of the first femtosecond laser 101, said lens 109 and lens 113 constituting a 4F imaging system, an aperture 111 being placed at the focus for the laser beam λ1Beam expanding and filtering, the first beam shaper 115 converts the gaussian spot into a flat-topped spot with uniformly distributed light intensity; similarly, a second dispersion compensator 103, a half-wave plate 106, a polarization beam splitter 108, a lens 110, a lens 114 and a second beam shaper 116 are sequentially arranged on the second optical path, and the second dispersion compensator 104 is used for pre-compensating the laser beam lambda2Pulse dispersion; a half-wave plate 105 and a polarizing beam splitter 107 for adjusting the output power of the second femtosecond laser 102, said lens 110 and lens 114 constituting a 4F imaging system, and an aperture 112 placed at the focal point for the laser beam λ2Beam expansion and filtering ofThe two-beam shaper 116 converts the gaussian spot into a flat-topped spot with uniformly distributed intensity.
The half-wave plate 105 and the polarization beam splitter 107, and the half-wave plate 106 and the polarization beam splitter 108 constitute power control elements, respectively, for adjusting the laser beam λ1And λ2Of the power of (c). The power of the laser beam is different, and the sizes of the corresponding two-photon effect excitation areas are different, so that the processing precision is influenced. If the power of the light beam is too large, the area near the focus of the convergent light spot reaching the two-photon polymerization threshold is large, and the processing precision is reduced; if the beam power is too small, the threshold of two-photon polymerization may not be reached, and processing will not be possible.
Therefore, in order to solve the above-described problems, in the present embodiment, as shown in fig. 3, power control elements are provided in the first optical path and the second optical path, and the power control elements can control the laser beam power so that the laser beams emitted from the first femtosecond laser 101 and the second femtosecond laser 102 satisfy the power requirements corresponding to the lithography accuracy. Therefore, the power of the light beam is controlled by the power control element, so that the emitted light beam meets the power requirement of the corresponding processing precision, the problem that the processing precision is low due to overlarge light beam power or photoetching cannot be performed due to undersize light beam power is solved to a great extent, the processing precision of the high-precision two-photon three-dimensional photoetching device is ensured, and the qualification rate of product processing is improved.
In this embodiment, the power control element includes a half-wave plate 105 and a polarizing beam splitter 107, a half-wave plate 106 and a polarizing beam splitter 108. The half-wave plate 105 and the polarization beam splitter 107 are used to adjust the output power of the first femtosecond laser 101, and the half-wave plate 106 and the polarization beam splitter 108 are used to adjust the output power of the second femtosecond laser 102.
It should be noted that the power control element is not limited to the half-wave plate and the polarization beam splitter, and may be other control elements, and this embodiment is only an exemplary illustration, and is not limited in particular.
The spatial light modulation module comprises a first reflector 201, a second reflector 202, a third reflector 203 and a spatial light modulator 204, wherein the first reflector 201 is provided withArranged on the output light path of the first light path, and the second reflecting mirror 202 arranged on the output light path of the second light path for respectively adjusting the laser beam lambda1And λ2The angle of (d); the third reflecting mirror 203 is disposed on the reflected light path of the first reflecting mirror 201 to reflect the laser beam λ1The corresponding light of the first light intensity distribution diagram is reflected to the projection module, the first light intensity distribution diagram is uniform light intensity, and the spatial light modulator 204 is arranged on the output light path of the second reflector 202 and modulates the laser of the second light path to generate a second light intensity distribution diagram. The spatial light modulation module is further provided with a first wave plate 205 and a second wave plate 206, wherein the first wave plate 205 adjusts the laser beam lambda1The second wave plate 206 adjusts the polarization state of the outgoing beam2The polarization state of the emergent beam, the modulated laser beam lambda1And λ2Of uniform polarization state, laser beam lambda1And λ2Are consistent in polarization state to efficiently excite non-degenerate two-photon effects.
It should be noted that the third reflecting mirror 203 may also be a spatial light modulator, and modulates the laser light of the first optical path to generate the first light intensity distribution map. The purpose of the present application is to improve the longitudinal lithography precision, that is, the optical sheets 11 and 12 only need to be overlapped in the thickness direction, and the slice patterns (light intensity distribution maps) on the optical sheets do not necessarily need to be completely corresponding, so that two spatial light modulation modules are not necessarily required, and only one spatial light modulator is enough. Of course, it is also possible to replace the third reflecting mirror 203 with a spatial light modulator, that is, the spatial light modulation module includes two spatial light modulators, and the two spatial light modulators respectively modulate the laser light in the first light path and the laser light in the second light path to generate the light intensity distribution diagram.
The projection module comprises a lens 301, a lens 302, a dichroic mirror 303, a dichroic mirror 304 and an objective lens 305, wherein the lens 301 and the lens 302 respectively form a 4F imaging system with the objective lens 305, and the first light intensity distribution diagram and the second light intensity distribution diagram are imaged on a focal plane of the objective lens 305; the dichroic mirror 303 is disposed between the lens 301 and the objective lens 305, and reflects the laser light λ1Transmission laser lambda2The dichroic mirror 304 is disposed between the lens 302 and the dichroic mirror 303, and reflects the laser lightλ2And transmits the detection light. The objective lens 305, which is movable in the Z-direction, facilitates adjustment of the first intensity profile and the second intensity profile to be imaged on the focal plane of the objective lens 305. By pre-compensating for the opposite dispersion, the laser λ is made1And λ2When the pulse width reaches the focal plane of the objective lens 305, the pulse width is narrowest, and the pulse peak power just exceeds the two-photon effect threshold, so that the two-photon polymerization effect can be excited; by controlling the pulse width in the time domain, a spatial slice (where the pulse width is narrowest) perpendicular to the direction of laser propagation can be formed, called a spatio-temporal slide. The first light intensity distribution graph and the second light intensity distribution graph are two space-time polished sections, the two light intensity distribution graphs are partially overlapped and focused in the photoresist, a non-degenerate two-photon absorption effect can be generated, the photoresist is subjected to photoetching based on space-time polished section overlapping, and the longitudinal processing precision is greatly improved.
It should be noted that the spatial light modulator may be an LCOS, a DMD, an LCD or other equivalent optical elements, and the present invention is not limited in particular.
The displacement module comprises a displacement platform 401 and a slide 402, which is coated with a photoresist 403, capable of producing a non-degenerate two-photon absorption effect. The slide glass 402 is connected with a displacement platform 403, and the displacement platform 403 is controlled by the computer 60 and can control the photoresist 403 to move along the projection direction of the micro-nano image. The computer 60 controls the movement of the displacement platform 401, and the movement of the displacement platform 401 drives the photoresist 403 on the slide 402 to move. The application discloses two-photon three-dimensional photoetching device produces the light intensity distribution map through the spatial light modulator and carries out parallel photoetching processing, can carry out photoetching to different imaging layers and positions of photoresist 403, adopts displacement platform 401 control the position of photoresist layer in this application, and piezoelectric displacement platform can XYZ triaxial displacement, and the projection speed of synchronous micronano image can be processed out jumbo size 3D micronano structure through the method of successive layer photoetching, regional concatenation.
When a 3D micro-nano structure is processed, the spatial light modulator dynamically generates a 2D light intensity distribution graph, the 2D light intensity distribution graph is projected to an objective lens focal plane in photoresist in a micro-shrinkage mode, and a two-photon polymerization effect is excited to generate a 2D micro-nano slice. Meanwhile, the relative position of the focal plane and the photoresist is synchronously controlled by the nano piezoelectric displacement platform, and the large-size three-dimensional micro-nano device is processed by a layer-by-layer photoetching and region splicing method. Fig. 4 shows the process of two-photon surface projection lithography, in order to avoid the cured or curing micro-nano structure from affecting the projection beam, the micro-nano slices should be polymerized from the bottom layer/top layer of the photoresist, and gradually moved up/down. The displacement platform 401 controls the photoresist layer to move towards the projection direction of the micro-nano image, and the processing sequence is 1, 2 and 3 … N. The femtosecond laser beam thus passes through a gradually thinner photoresist layer, experiences gradually less dispersion, and the pulse width at the objective focal plane is also widened accordingly. The utility model discloses real-time supervision photoresist thickness, feedback dispersion compensator, real-time adjustment dispersion compensation volume, control slide and focal plane are coincidence in real time, guarantee the machining precision.
Further, as shown in fig. 3, the displacement module has a detection device, and the detection device includes:
a lens 501 for collecting detected light images;
a detector 502 for detecting the thickness of the photoresist in real time, feeding back the dispersion compensator, and adjusting the dispersion compensation amount in real time;
an illumination light source 503 for detecting illumination.
As shown in fig. 3, the illumination light source 503 is disposed above the photoresist 403 to provide illumination for the photoresist 403, the detector 502 is disposed below the dichroic mirror 304, the illumination light source 503 is used to illuminate the photoresist 403 (such as a photosensitive resin material), the emitted illumination light beam directly passes through the dichroic mirror 304, is converged by the lens 501 and illuminates the detector 502, the detector 502 collects the illumination light from the surface of the photoresist 403, detects the thickness of the photoresist in real time, calculates the dispersion compensation amount and feeds back the dispersion compensator, adjusts the dispersion compensation amount in real time, controls the optical sheet to coincide with the focal plane in real time, and ensures the processing accuracy.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include elements inherent in the list. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. In addition, parts of the above technical solutions provided in the embodiments of the present application, which are consistent with the implementation principles of corresponding technical solutions in the prior art, are not described in detail so as to avoid redundant description.
The above description of the embodiments is only intended to help understand the method of the present invention and its core ideas. It should be noted that, for those skilled in the art, without departing from the principle of the present invention, the present invention can be further modified and modified, and such modifications and modifications also fall within the protection scope of the appended claims.
Claims (10)
1. A two-photon three-dimensional lithographic apparatus, comprising:
the optical source module comprises a first optical path and a second optical path which have different wavelengths, wherein the first optical path and the second optical path are respectively provided with a dispersion compensator which is used for pre-compensating laser pulse dispersion in the first optical path and the second optical path;
the spatial light modulation module is used for respectively modulating the first light path and the second light path to generate a first light intensity distribution graph and a second light intensity distribution graph;
the projection module images the first light intensity distribution graph and the second light intensity distribution graph generated by the spatial light modulation module on a focal plane of the objective lens;
the displacement module is used for three-dimensional scanning and photoetching of the photoresist, and the first light intensity distribution graph and the second light intensity distribution graph are partially overlapped and focused in the photoresist to carry out photoetching on the photoresist; and the computer is used for controlling the dispersion compensator, the spatial light modulation module and the displacement module.
2. A two-photon three-dimensional lithography apparatus according to claim 1, wherein said displacement module comprises a displacement platform and a slide, said slide having a photoresist disposed thereon, said slide being connected to said displacement platform, said displacement platform being controlled by said control module.
3. A two-photon three-dimensional lithographic apparatus according to claim 2, wherein said displacement module has a detection device comprising:
a lens for collecting the detected light image;
the detector detects the thickness of the photoresist in real time, feeds back the dispersion compensator and adjusts the dispersion compensation amount in real time;
an illumination light source for detecting illumination.
4. A two-photon three-dimensional lithography apparatus as recited in claim 1 wherein said first optical path and said second optical path further comprise a power control element, a 4F lens group, said power control element being disposed on an input optical path of said 4F lens group.
5. A two-photon three-dimensional lithographic apparatus according to claim 4, wherein said power control element comprises a half-wave plate and a polarizing beam splitter, said polarizing beam splitter being arranged in an output optical path of the half-wave plate, said 4F lens group being arranged in an output optical path of the polarizing beam splitter.
6. The two-photon three-dimensional lithography apparatus of claim 1 wherein said first and second optical paths further comprise beam shapers to convert a gaussian spot into a flat-topped spot with a uniform distribution of light intensity.
7. A two-photon three-dimensional lithography apparatus according to any one of claims 1 to 6, wherein said spatial light modulation module comprises a mirror for adjusting the beam angles of the first and second optical paths, a spatial light modulator for modulating the first and second optical paths respectively to generate a first and second intensity distribution map, and a polarization element for adjusting the polarization states of the beams of the first and second optical paths.
8. A two-photon three-dimensional lithographic apparatus as claimed in claim 7, wherein said spatial light modulation module further comprises a first wave plate, a second wave plate, said second wave plate comprising a quarter wave plate and/or a half wave plate.
9. A two-photon three-dimensional lithographic apparatus according to claim 7, wherein said spatial light modulator is LCOS, DMD or LCD.
10. A two-photon three-dimensional lithography apparatus as recited in claim 7, wherein said projection module further comprises a first dichroic mirror for reflecting the laser light of the first optical path and transmitting the laser light of the second optical path, and a second dichroic mirror for reflecting the laser light of the second optical path.
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| CN202120618113.3U Active CN214623298U (en) | 2021-03-26 | 2021-03-26 | Two-photon three-dimensional photoetching device |
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