CN214621081U - Detection mechanism for thickness of wafer - Google Patents
Detection mechanism for thickness of wafer Download PDFInfo
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- CN214621081U CN214621081U CN202120550807.8U CN202120550807U CN214621081U CN 214621081 U CN214621081 U CN 214621081U CN 202120550807 U CN202120550807 U CN 202120550807U CN 214621081 U CN214621081 U CN 214621081U
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Abstract
The utility model discloses a mechanism for detecting the thickness of a wafer, which comprises an L-shaped base consisting of a bottom plate and a side plate, an x-axis adjusting mechanism, a y-axis adjusting mechanism, a wafer placing platform, an upper measuring head fine-tuning mechanism and a lower measuring head fine-tuning mechanism; the x-axis adjusting mechanism is arranged on the bottom plate, and the upper part of the y-axis adjusting mechanism is connected with the wafer placing platform through the platform connecting block; the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism are fixed on the measuring head fixing plate through an upper connecting block and a lower connecting block respectively; the measuring head fixing plate is fixed on the side plate; the wafer placing platform is arranged between the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism; the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism can carry out xyz theta four-axis fine adjustment. The utility model discloses used xyz theta four-axis fine setting platform, the adjustable Z axle of collocation, the lead screw shift position is given with accurate hand wheel to wafer place the platform, and overall structure is compact, has ensured convenience, the measurement accuracy of measurement adjustment and the convenience of carrying at any time.
Description
Technical Field
The utility model relates to a wafer thickness check out test set technical field particularly relates to a detection mechanism of wafer thickness.
Background
At present, with the continuous development of Integrated Circuit (IC) manufacturing technology, the feature size of a chip is smaller and smaller, the number of interconnect layers is larger and larger, and the diameter of a wafer is also larger. To realize multi-layer wiring, the surface of the wafer must have extremely high flatness, smoothness and cleanliness, so that the inspection equipment is particularly important, thereby reducing the generation of defects and improving the effective productivity. Among the prior art, mostly be automatic check out test set, this type of equipment has certain advantage in detection efficiency, but often the size is great, is not convenient for carry the transfer at any time.
As disclosed in the invention application with application number 201810321347.4, an automated apparatus for multi-size compatible LED thickness detection includes a wafer cassette library, a robot, a pre-alignment platform, and a marble air-bearing table; because the invention adopts 12 wafer storehouses and a method for grabbing and placing the wafers by the manipulator, compared with the prior method of manually placing the wafers and detecting the wafers by a single wafer, the detection efficiency is greatly improved; according to the invention, the pre-alignment platform part is added before final detection, so that the placing and positioning accuracy of the wafer is far higher than that of manual placing, and the detection accuracy is greatly improved.
Disclosure of Invention
To the not enough of prior art, the utility model aims to provide a wafer thickness detection mechanism that detects the precision height, be convenient for adjustment and operation, portable shift.
The utility model provides a technical scheme that technical problem adopted is: a detection mechanism for the thickness of a wafer comprises an L-shaped base, an x-axis adjusting mechanism, a y-axis adjusting mechanism, a wafer placing platform, an upper measuring head fine-tuning mechanism and a lower measuring head fine-tuning mechanism, wherein the L-shaped base is composed of a bottom plate and a side plate;
the x-axis adjusting mechanism is arranged on the bottom plate, the y-axis adjusting mechanism is arranged above the x-axis adjusting mechanism, and the upper part of the y-axis adjusting mechanism is connected with the wafer placing platform through a platform connecting block; the x-axis adjusting mechanism drives the y-axis adjusting mechanism and the wafer placing platform to move in the x-axis direction, and the y-axis adjusting mechanism drives the wafer placing platform to move in the y-axis direction;
the upper measuring head fine adjustment mechanism is fixed on the measuring head fixing plate through an upper connecting block, and the lower measuring head fine adjustment mechanism is fixed on the measuring head fixing plate through a lower connecting block; the measuring head fixing plate is fixed on the side plate; the wafer placing platform is arranged between the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism; an upper measuring head is arranged in the upper measuring head fine adjustment mechanism, and a lower measuring head is arranged in the lower measuring head fine adjustment mechanism; and the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism can carry out xyz theta four-axis fine adjustment.
Furthermore, the upper measuring head fine adjustment mechanism comprises an upper measuring head fine adjustment platform and an upper measuring head; the lower measuring head fine adjustment mechanism comprises a lower measuring head fine adjustment platform and a lower measuring head; the upper measuring head fine tuning platform comprises a theta axis fine tuning mechanism, an xy axis fine tuning mechanism and a z axis fine tuning mechanism; the middle part of the upper measuring head fine tuning platform is provided with a mounting hole for mounting an upper measuring head; the structure of the lower measuring head fine tuning platform is the same as that of the upper measuring head fine tuning platform.
Further, the theta axis fine adjustment mechanism comprises an L-shaped adjustment plate, a first adjustment knob and a second adjustment knob, wherein the first adjustment knob and the second adjustment knob are arranged at two end parts of the L-shaped adjustment plate; the L-shaped adjusting plate is arranged above the xy-axis fine adjustment mechanism, and a gap is reserved between the L-shaped adjusting plate and the xy-axis fine adjustment mechanism; by rotating the first adjusting knob and the second adjusting knob, fine adjustment of the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform in the theta axis direction can be achieved.
Furthermore, the xy-axis fine adjustment mechanism comprises an xy-axis fine adjustment plate, a square adjustment frame arranged on the periphery of the xy-axis fine adjustment plate, and a third adjustment knob and a fourth adjustment knob arranged on diagonal edges of the square adjustment frame; and the third adjusting knob and the fourth adjusting knob are rotated to realize the fine adjustment of the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform in the directions of the x axis and the y axis.
Furthermore, the z-axis fine adjustment mechanism comprises an adjusting ring, and the inner wall of the adjusting ring is provided with a screw thread; the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform can be finely adjusted in the z-axis direction through the rotation and the lifting of the screw teeth.
Furthermore, the x-axis adjusting mechanism and the y-axis adjusting mechanism are vertically arranged; the x-axis adjusting mechanism and the y-axis adjusting mechanism both mainly comprise adjusting supports, a screw rod, hand-operated wheels arranged at the end parts of the screw rod and locking switches arranged on the screw rod; the hand-operated wheel is shaken to drive the screw rod to advance and retreat, so that the wafer placing platform is adjusted in position in the x-axis or y-axis direction.
Further, a wafer placing hole is formed in the wafer placing platform, a circle of convex strips are arranged on the inner wall of the wafer placing hole, and the convex strips are used for bearing a wafer to be detected.
Furthermore, a reinforcing rib is arranged at the joint of the bottom plate and the side plate.
The utility model has the advantages that: compared with the prior art, the utility model provides a detection mechanism of wafer thickness has used xyz theta four-axis fine setting platform, and the adjustable Z axle of collocation, wafer place the platform give the lead screw shift position with accurate hand wheel, and overall structure is compact, has ensured convenience, the measurement accuracy of measurement adjustment and the convenience of carrying at any time.
Drawings
Fig. 1 is a schematic perspective view of a detection mechanism provided by the present invention.
Fig. 2 is an exploded view of the components of the detecting mechanism provided by the present invention.
Fig. 3 is a side view of the detecting mechanism provided by the present invention.
Fig. 4 is a schematic structural diagram of an upper gauge head fine adjustment mechanism (or a lower gauge head fine adjustment mechanism) in the detection mechanism provided by the present invention.
Fig. 5 is a schematic structural diagram of an x-axis adjusting mechanism (or a y-axis adjusting mechanism) in the detecting mechanism provided by the present invention.
Fig. 6 is a schematic structural diagram of the wafer placement platform in the detection mechanism provided by the present invention.
Wherein, 1-platform connecting block; 2-a wafer placement platform; 3-wafer placing holes; 4-upper measuring head fine adjustment mechanism; 5-a measuring head fixing plate; 6-connecting the block; 7-lower connecting block; 8-side plate; 9-lower measuring head fine adjustment mechanism; 10-reinforcing ribs; 11-a base plate; a 12-y axis adjustment mechanism; 13-x axis adjustment mechanism; 14-an upper measuring head; 15-lower measuring head; 16-square adjusting frame; 17-xy axis fine tuning plate; 18-a third adjustment knob; 19-a first adjustment knob; a 20-L shaped adjustment plate; 21-a second adjustment knob; 22-a fourth adjustment knob; 23-screw thread; 24-an adjustment ring; 25-adjusting the support; 26-a screw rod; 27-a locking switch; 28-hand wheel; 29-ribs.
Detailed Description
The invention is further illustrated by the following specific examples. These examples are intended to illustrate the invention and are not intended to limit the scope of the invention.
Examples
As shown in fig. 1 to 6, a wafer thickness detection mechanism includes an L-shaped base composed of a bottom plate 11 and a side plate 8, an x-axis adjustment mechanism 13, a y-axis adjustment mechanism 12, a wafer placement platform 2, an upper probe fine adjustment mechanism 4, and a lower probe fine adjustment mechanism 9; the x-axis adjusting mechanism 13 is arranged on the bottom plate 11, the y-axis adjusting mechanism 12 is arranged above the x-axis adjusting mechanism 13, and the upper part of the y-axis adjusting mechanism 12 is connected with the wafer placing platform 2 through a platform connecting block 1; the x-axis adjusting mechanism 13 drives the y-axis adjusting mechanism 12 and the wafer placing platform 2 to move in the x-axis direction, and the y-axis adjusting mechanism 12 drives the wafer placing platform 2 to move in the y-axis direction; the x-axis adjusting mechanism 13 and the y-axis adjusting mechanism 12 are vertically arranged; the x-axis adjusting mechanism 13 and the y-axis adjusting mechanism 12 both mainly comprise an adjusting support 25, a screw rod 26, a hand wheel 28 arranged at the end part of the screw rod 26, and a locking switch 27 arranged on the screw rod 26; the hand-operated wheel 28 is shaken to drive the screw rod 26 to move forward and backward, so that the position of the wafer placing platform 2 is adjusted in the x-axis or y-axis direction. And reinforcing ribs 10 are arranged at the joints of the bottom plate 11 and the side plates 8. The wafer placing platform 2 is arranged between the upper measuring head fine adjustment mechanism 4 and the lower measuring head fine adjustment mechanism 9; the wafer placing platform 2 is provided with a wafer placing hole 3, the inner wall of the wafer placing hole 3 is provided with a circle of convex strips 29, and the convex strips 29 are used for bearing a wafer to be detected.
The upper measuring head fine adjustment mechanism 4 is fixed on the measuring head fixing plate 5 through an upper connecting block 6, and the lower measuring head fine adjustment mechanism 9 is fixed on the measuring head fixing plate 5 through a lower connecting block 7; the measuring head fixing plate 5 is fixed on the side plate 8; an upper measuring head 14 is arranged in the upper measuring head fine adjustment mechanism 4, and a lower measuring head 15 is arranged in the lower measuring head fine adjustment mechanism 9; the upper measuring head fine adjustment mechanism 4 and the lower measuring head fine adjustment mechanism 9 can perform xyz theta four-axis fine adjustment.
The upper measuring head fine adjustment mechanism 4 comprises an upper measuring head fine adjustment platform and an upper measuring head 14; the lower measuring head fine adjustment mechanism 9 comprises a lower measuring head fine adjustment platform and a lower measuring head 15; the upper measuring head fine tuning platform comprises a theta axis fine tuning mechanism, an xy axis fine tuning mechanism and a z axis fine tuning mechanism; the middle part of the upper measuring head fine tuning platform is provided with a mounting hole for mounting an upper measuring head 14; the structure of the lower measuring head fine tuning platform is the same as that of the upper measuring head fine tuning platform.
The theta axis fine adjustment mechanism comprises an L-shaped adjustment plate 20, a first adjustment knob 19 and a second adjustment knob 21 which are arranged at two end parts of the L-shaped adjustment plate 20; the L-shaped adjusting plate 20 is arranged above the xy-axis fine adjustment mechanism, and a gap is reserved between the L-shaped adjusting plate and the xy-axis fine adjustment mechanism; by rotating the first adjusting knob 19 and the second adjusting knob 21, fine adjustment of the upper gauge head fine adjustment platform or the lower gauge head fine adjustment platform in the θ -axis direction can be achieved. The xy-axis fine adjustment mechanism comprises an xy-axis fine adjustment plate 17, a square adjustment frame 16 arranged on the periphery of the xy-axis fine adjustment plate 17, a third adjustment knob 18 and a fourth adjustment knob 22 arranged on diagonal edges of the square adjustment frame 16; by rotating the third adjusting knob and the fourth adjusting knob 22, fine adjustment of the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform in the x-axis direction and the y-axis direction can be realized. The z-axis fine adjustment mechanism comprises an adjusting ring 24, and the inner wall of the adjusting ring 24 is provided with a screw thread 23; the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform can be finely adjusted in the z-axis direction by rotating and lifting the screw teeth 23.
The detection method of the wafer thickness detection mechanism comprises the following steps: placing a wafer with the thickness to be detected in a wafer placing hole 3 of a wafer placing platform 2, adjusting the position of an upper measuring head fine adjustment mechanism 4 and a lower measuring head fine adjustment mechanism 9 in the z-axis direction, and respectively placing an upper measuring head 14 and a lower measuring head 15 in the upper measuring head fine adjustment mechanism 4 and the lower measuring head fine adjustment mechanism 9; the x-axis adjusting mechanism 13 and the y-axis adjusting mechanism 12 are respectively shaken by the hand-operated wheel 28, the position of the wafer placing platform 2 is adjusted in the x-axis or y-axis direction, and the precision is ensured by the xyz theta four-axis fine adjustment in the upper measuring head fine adjustment mechanism 4 and the lower measuring head fine adjustment mechanism 9; the wafer thickness is measured and the data recorded while moving into position. According to the detection mechanism and the detection method for the thickness of the wafer, an xyz theta four-axis fine adjustment platform is used, an adjustable Z axis is matched, the wafer placement platform 2 is moved by a precise hand-operated feed screw rod 26, the whole structure is compact, and the convenience of measurement and adjustment, the measurement precision and the convenience of carrying at any time are ensured.
The above embodiments are only used for illustrating the present invention, and not for limiting the present invention, and those skilled in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the present invention, so that all equivalent technical solutions also belong to the scope of the present invention, and the protection scope of the present invention should be defined by the claims.
Claims (8)
1. A detection mechanism of wafer thickness which characterized in that: the detection mechanism comprises an L-shaped base consisting of a bottom plate and a side plate, an x-axis adjusting mechanism, a y-axis adjusting mechanism, a wafer placing platform, an upper measuring head fine-tuning mechanism and a lower measuring head fine-tuning mechanism;
the x-axis adjusting mechanism is arranged on the bottom plate, the y-axis adjusting mechanism is arranged above the x-axis adjusting mechanism, and the upper part of the y-axis adjusting mechanism is connected with the wafer placing platform through a platform connecting block; the x-axis adjusting mechanism drives the y-axis adjusting mechanism and the wafer placing platform to move in the x-axis direction, and the y-axis adjusting mechanism drives the wafer placing platform to move in the y-axis direction;
the upper measuring head fine adjustment mechanism is fixed on the measuring head fixing plate through an upper connecting block, and the lower measuring head fine adjustment mechanism is fixed on the measuring head fixing plate through a lower connecting block; the measuring head fixing plate is fixed on the side plate; the wafer placing platform is arranged between the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism; an upper measuring head is arranged in the upper measuring head fine adjustment mechanism, and a lower measuring head is arranged in the lower measuring head fine adjustment mechanism; and the upper measuring head fine adjustment mechanism and the lower measuring head fine adjustment mechanism can carry out xyz theta four-axis fine adjustment.
2. A wafer thickness detection mechanism as claimed in claim 1, wherein: the upper measuring head fine adjustment mechanism comprises an upper measuring head fine adjustment platform and an upper measuring head; the lower measuring head fine adjustment mechanism comprises a lower measuring head fine adjustment platform and a lower measuring head; the upper measuring head fine tuning platform comprises a theta axis fine tuning mechanism, an xy axis fine tuning mechanism and a z axis fine tuning mechanism; the middle part of the upper measuring head fine tuning platform is provided with a mounting hole for mounting an upper measuring head; the structure of the lower measuring head fine tuning platform is the same as that of the upper measuring head fine tuning platform.
3. A wafer thickness detection mechanism as claimed in claim 2, wherein: the theta axis fine adjustment mechanism comprises an L-shaped adjustment plate, a first adjustment knob and a second adjustment knob, wherein the first adjustment knob and the second adjustment knob are arranged at two end parts of the L-shaped adjustment plate; the L-shaped adjusting plate is arranged above the xy-axis fine adjustment mechanism, and a gap is reserved between the L-shaped adjusting plate and the xy-axis fine adjustment mechanism; by rotating the first adjusting knob and the second adjusting knob, fine adjustment of the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform in the theta axis direction can be achieved.
4. A wafer thickness detection mechanism as claimed in claim 2, wherein: the xy-axis fine adjustment mechanism comprises an xy-axis fine adjustment plate, a square adjustment frame arranged on the periphery of the xy-axis fine adjustment plate, and a third adjustment knob and a fourth adjustment knob arranged on diagonal edges of the square adjustment frame; by rotating the third adjusting knob and the fourth adjusting knob, fine adjustment of the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform in the x-axis direction and the y-axis direction can be achieved.
5. A wafer thickness detection mechanism as claimed in claim 2, wherein: the z-axis fine adjustment mechanism comprises an adjusting ring, and the inner wall of the adjusting ring is provided with a screw thread; the upper measuring head fine adjustment platform or the lower measuring head fine adjustment platform can be finely adjusted in the z-axis direction through the rotation and the lifting of the screw teeth.
6. A wafer thickness detection mechanism as claimed in claim 1, wherein: the x-axis adjusting mechanism and the y-axis adjusting mechanism are vertically arranged; the x-axis adjusting mechanism and the y-axis adjusting mechanism both mainly comprise adjusting supports, a screw rod, hand-operated wheels arranged at the end parts of the screw rod and locking switches arranged on the screw rod; the hand-operated wheel is shaken to drive the screw rod to advance and retreat, so that the wafer placing platform is adjusted in position in the x-axis or y-axis direction.
7. A wafer thickness detection mechanism as claimed in claim 1, wherein: the wafer placing platform is provided with a wafer placing hole, the inner wall of the wafer placing hole is provided with a circle of raised lines, and the raised lines are used for bearing a wafer to be detected.
8. A wafer thickness detection mechanism as claimed in claim 1, wherein: and reinforcing ribs are arranged at the joints of the bottom plate and the side plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120550807.8U CN214621081U (en) | 2021-03-17 | 2021-03-17 | Detection mechanism for thickness of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120550807.8U CN214621081U (en) | 2021-03-17 | 2021-03-17 | Detection mechanism for thickness of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN214621081U true CN214621081U (en) | 2021-11-05 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120550807.8U Active CN214621081U (en) | 2021-03-17 | 2021-03-17 | Detection mechanism for thickness of wafer |
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| Country | Link |
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| CN (1) | CN214621081U (en) |
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2021
- 2021-03-17 CN CN202120550807.8U patent/CN214621081U/en active Active
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