CN214542120U - Inductively coupled plasma device - Google Patents
Inductively coupled plasma device Download PDFInfo
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- CN214542120U CN214542120U CN202121288712.XU CN202121288712U CN214542120U CN 214542120 U CN214542120 U CN 214542120U CN 202121288712 U CN202121288712 U CN 202121288712U CN 214542120 U CN214542120 U CN 214542120U
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- coupled plasma
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Abstract
An inductively coupled plasma apparatus, comprising: the reaction chamber comprises a reaction chamber main body, wherein the top wall of the reaction chamber main body comprises a medium window; the inductance coil is positioned on the top of the dielectric window; a number of discrete magnetic elements positioned on top of the dielectric window, the magnetic elements being surrounded by and discrete from the inductor coil at least in part by the turns of the inductor coil. The inductively coupled plasma device can adjust the plasma density graduation in the reaction cavity main body and has a simple structure.
Description
Technical Field
The utility model relates to the field of semiconductor technology, especially, relate to an inductive coupling plasma device.
Background
In semiconductor manufacturing, a plurality of processes are involved, each of which is performed by a certain apparatus and process. Among them, the etching process is an important process in semiconductor manufacturing, such as a plasma etching process. The plasma etching process is to utilize reaction gas to generate plasma after obtaining energy, wherein the plasma comprises charged particles such as ions and electrons, neutral atoms, molecules and free radicals with high chemical activity, and an etching object is etched through physical and chemical reactions.
However, during plasma etching, the etching conditions at the edge of the wafer and the etching conditions at the center of the wafer are greatly different, and the etching conditions include: plasma density distribution, radio frequency electric field, temperature distribution, etc. Where plasma density distribution is a very important etching condition. For example, the plasma density distributed over the center region of the wafer is typically greater than the plasma density distributed over the edge region of the wafer, and such a distribution is difficult to adjust.
Therefore, it is desirable to provide an inductively coupled plasma device with controllable adjustment of the plasma distribution to meet the needs.
SUMMERY OF THE UTILITY MODEL
The utility model provides a problem provide an inductive coupling plasma device can improve the inside plasma density distribution of the reaction chamber main part of adjusting inductive coupling plasma device and simple structure.
In order to solve the above technical problem, the utility model provides an inductive coupling plasma device, include: the reaction chamber comprises a reaction chamber main body, wherein the top wall of the reaction chamber main body comprises a medium window; the inductance coil is positioned on the top of the dielectric window; a number of discrete magnetic elements positioned on top of the dielectric window, the magnetic elements being surrounded by and discrete from the inductor coil at least in part by the turns of the inductor coil.
Optionally, the number of the inductance coils is M, where the M inductance coils include a first inductance coil to an mth inductance coil, and M is an integer greater than or equal to 1; the jth inductance coil is provided with a jth radio frequency input end and a jth grounding end; j is an integer of 1 or more and M or less.
Optionally, M is an integer greater than or equal to 2, the M inductor coils are separated from each other, the M +1 th inductor coil is integrally located at the outer side of the M inductor coil and surrounds the M inductor coil, and M is an integer greater than or equal to 1 and less than or equal to M-1; the jth inductance coil includes the first to Nth inductance coilsjLoop inductance coil, NjIs an integer of 1 or more.
Optionally, NjIs an integer of 2 or more; the jth inductance coil is in a spiral shape; the central axis of the jth inductance coil is vertical to the surface of the dielectric window; the m-th inductance coil and the m + 1-th inductance coil are arrangedThere are at least two magnetic elements.
Optionally, NjIs an integer of 2 or more; the jth inductance coil is in a coil shape, and the central axis of the jth inductance coil is vertical to the surface of the dielectric window; a first inductor winding surrounds the at least two magnetic elements; nth of mth inductance coilmWinding the inductor to the Nth of the (m + 1) th inductorm+1At least two magnetic elements are arranged between the coil inductors.
Optionally, the position distribution of the plurality of discrete magnetic elements is adjustable.
Optionally, the magnetic element has a relative permeability of 2 to 10000.
Optionally, each of the magnetic elements has a columnar structure, an annular structure, or a rectangular parallelepiped structure.
Optionally, the magnetic element comprises a ferrite magnetic element or a silicon steel magnetic element.
Optionally, the plurality of discrete magnetic elements are distributed along a direction parallel to the surface of the dielectric window.
Optionally, the method further includes: a height adjustment mechanism coupled to the plurality of discrete magnetic elements, the height adjustment mechanism adapted to adjust a spacing of each of the magnetic elements to the dielectric window.
Optionally, the height adjustment mechanism includes: linear motors, cylinder structures or worm structures.
Optionally, the dielectric window includes a central region and an edge region surrounding the central region; the distribution density of the magnetic elements is greater in the edge region than in the central region.
Optionally, the method further includes: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source, and the other end of the radio frequency matcher is connected with the first radio frequency input end of the first inductance coil to the first radio frequency input end of the Mth inductance coil.
Compared with the prior art, the technical scheme of the utility model following beneficial effect has:
the technical scheme of the utility model provides an inductive coupling plasma device, which comprises a reaction cavity main body, wherein the top wall of the reaction cavity main body comprises a medium window; the inductance coil is positioned on the top of the dielectric window; a number of discrete magnetic elements positioned on top of the dielectric window, the magnetic elements being surrounded by and discrete from the inductor coil at least in part by the turns of the inductor coil. The utility model discloses in set up a plurality of passive magnetic element, magnetic element is surrounded by partial circle's inductance coils at least and is discrete with inductance coils, and magnetic element can strengthen and adjust the magnetic induction intensity spatial distribution, realizes that the inside plasma density distribution of reaction chamber main part is adjustable. Secondly, the inductance coil has a simple structure, and the electrical connection between the inductance coil and the radio frequency source is simpler.
Further, the inductively coupled plasma device further comprises a height adjusting mechanism connected with the plurality of discrete magnetic elements, wherein the height adjusting mechanism is suitable for adjusting the distance between each magnetic element and the dielectric window. The larger the distance between the magnetic element and the dielectric window is, the larger the magnetic induction attenuation inside the reaction chamber main body is, and the lower the plasma density inside the corresponding reaction chamber main body is. The smaller the distance between the magnetic element and the dielectric window is, the smaller the magnetic induction attenuation inside the reaction chamber main body is, and the lower the plasma density inside the corresponding reaction chamber main body is. This allows for enhanced tunability of the plasma density inside the main body of the reaction chamber. The plasma density inside the main body of the reaction chamber is adjusted at any time, whether before or during the process, to meet the process requirements.
Drawings
Fig. 1 is a schematic structural diagram of an inductively coupled plasma apparatus according to an embodiment of the present invention;
fig. 2 is a partial schematic view of an inductively coupled plasma apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an inductively coupled plasma apparatus according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of an inductively coupled plasma apparatus according to another embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the accompanying drawings, and obviously, the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features mentioned in the different embodiments of the invention described below can be combined with each other as long as they do not conflict with each other.
An embodiment of the present invention provides an inductively coupled plasma device, please refer to fig. 1 and fig. 2 in combination, including:
a reaction chamber body 100, wherein the top wall of the reaction chamber body 100 comprises a medium window 101;
an inductor 110 on top of the dielectric window 101;
a number of discrete magnetic elements 120 located on top of the dielectric window 101, the magnetic elements 120 being surrounded by at least a partial turn of the inductor winding 110 and being discrete from the inductor winding 110.
The number of the inductance coils 110 is M, the M inductance coils include a first inductance coil to an mth inductance coil, and M is an integer greater than or equal to 1; the jth inductance coil is provided with a jth radio frequency input end and a jth grounding end; j is an integer of 1 or more and M or less.
In one embodiment, M is an integer greater than or equal to 2, the M inductance coils are separated from each other, the M +1 th inductance coil is integrally located at the outer side of the M-th inductance coil and surrounds the M-th inductance coil, and M is an integer greater than or equal to 1 and less than or equal to M-1.
The jth inductance coil includes the first to Nth inductance coilsjLoop inductance coil, NjIs an integer of 1 or more. When j takes 1, the first inductance coil comprises a first circle of inductance coils to an Nth circle of inductance coils1Loop inductance coil, N1Is an integer of 1 or more; when j is M, the Mth inductance coil comprises a first circle of inductance coils to an Nth circle of inductance coilsMLoop inductance coil, NMIs an integer of 1 or more. N is a radical of1To NMAny two values are equal or different.
In one embodiment, NjIs an integer of 2 or more; the jth inductance coil is in a spiral shape; the central axis of the jth inductance coil is vertical to the surface of the dielectric window; at least two magnetic elements are arranged between the m < th > inductance coil and the m +1 < th > inductance coil.
In another embodiment, NjIs an integer of 2 or more; the jth inductance coil is in a coil shape, and the central axis of the jth inductance coil is vertical to the surface of the dielectric window; a first inductor winding surrounds the at least two magnetic elements; nth of mth inductance coilmWinding the inductor to the Nth of the (m + 1) th inductorm+1Between the coil inductance coil is arrangedTwo less magnetic elements.
In a specific embodiment, the Nth inductance coil of the mth inductance coilmWinding the inductor to the Nth of the (m + 1) th inductorm+1The magnetic elements arranged between the inductance coils are respectively positioned between any two adjacent circles of the (m + 1) th inductance coil.
First to Nth loops of jth inductorjAt least two magnetic elements are arranged between the coil inductors. First to Nth loops of first inductor1At least two magnetic elements are arranged between the coil inductors. First to Nth loops of Mth inductance coilMAt least two magnetic elements are arranged between the coil inductors.
Kth in jth inductorjInductance coil and k-th coilj+1 inductive coil connection; k is a radical ofjIs greater than or equal to 1 and less than or equal to Nj-an integer of 1.
The inductance coil 110 of the present embodiment has a simple structure, and the electrical connection between the inductance coil 110 and the rf source is simple.
The radio frequency current fed into the inductance coil 110 forms an alternating magnetic field, the alternating magnetic field excites the gas inside the reaction chamber main body 100 through the dielectric window 101 to form an inductively coupled plasma a (refer to fig. 2), and the density of the inductively coupled plasma is positively correlated to the excitation magnetic induction intensity. Due to the arrangement of the magnetic element 120, the magnetic element 120 can enhance and adjust the spatial distribution of magnetic induction intensity, thereby realizing the adjustable plasma density distribution inside the reaction chamber body 100.
In this embodiment, the position distribution of the plurality of discrete magnetic elements is adjustable.
The distribution of several discrete magnetic elements along the surface of the dielectric window 101 is adjustable.
In one embodiment, the radio frequency fed into the inductive coil 110 is 40KHz to 60 MHz.
In this embodiment, the magnetic element 120 is in a columnar structure.
In the present embodiment, the magnetic element 120 has a relative magnetic permeability of 2 to 10000, and preferably, the magnetic element 120 has a relative magnetic permeability of 100 to 10000.
In one embodiment, the relative magnetic permeability of the plurality of magnetic elements 120 is the same. In another embodiment, the plurality of magnetic elements 120 differ in relative permeability.
The magnetic element 120 comprises a ferrite magnetic element or a silicon steel magnetic element.
In this embodiment, a plurality of inductor coils are distributed along a direction parallel to the surface of the dielectric window 101.
The plurality of discrete magnetic elements 120 are distributed along a direction parallel to the surface of the dielectric window 101. Fig. 1 is merely for convenience of illustration and does not represent the actual location of the inductor coil and the magnetic element 120.
In one embodiment, the dielectric window 101 includes a central region and an edge region surrounding the central region. The distribution density of the magnetic elements 120 is greater in the edge regions than in the central region.
In one embodiment, when the distribution density of the magnetic elements 120 is greater in the edge region than in the center region, the relative permeability of the magnetic elements 120 located in the edge region is greater than the relative permeability of the magnetic elements 120 located in the center region.
The plasma density directly below the magnetic element 120 is greater than the plasma density at the laterally lower position of the magnetic element 120.
The inductively coupled plasma apparatus further comprises: a wafer support platform (not shown) within the chamber body 100. The surface of the wafer bearing platform is suitable for placing a wafer.
The top wall of the chamber body 100 has an inlet (not shown). The bottom wall of the reaction chamber body 100 has an air outlet (not shown).
The inductively coupled plasma apparatus further comprises: a radio frequency source (not shown); and a radio frequency matcher (not shown), wherein one end of the radio frequency matcher is connected with the radio frequency source, and the other end of the radio frequency matcher is connected with the first radio frequency input end of the first inductance coil to the first radio frequency input end of the Mth inductance coil.
In this embodiment, the operation principle of the inductively coupled plasma apparatus includes: radio frequency power provided by a radio frequency source is fed into the inductance coil 110 through a radio frequency matcher, radio frequency current in the inductance coil 110 generates an alternating magnetic field perpendicular to a current plane inside the reaction chamber main body 100, the alternating magnetic field induces an angular electric field parallel to the current direction of the coil inside the reaction chamber main body 100, reaction gas inside the reaction chamber main body 100 generates inductively coupled plasma a under the action of the angular electric field, and the density distribution of the inductively coupled plasma a can be controlled by the size of the radio frequency power in the inductance coil 110 and the distribution of the magnetic elements 120. The regulated plasma is gradually accelerated by the bias voltage applied on the wafer bearing platform to reach the surface of the wafer, and the etching process or other processes for the wafer are completed.
Another embodiment of the present invention further provides an inductively coupled plasma device, and referring to fig. 3, the inductively coupled plasma device of the present embodiment is different from the inductively coupled plasma device of the previous embodiment in that: the inductively coupled plasma apparatus further comprises: a height adjustment mechanism 130 coupled to a plurality of discrete magnetic elements 120, the height adjustment mechanism 130 adapted to adjust a spacing of each of the magnetic elements 120 to the dielectric window 101.
The height adjusting mechanism 130 includes: linear motors, cylinder structures or worm structures.
The height adjustment mechanisms 130 independently adjust the distance from each magnetic element 120 to the dielectric window 101. Alternatively, the height adjustment mechanism 130 adjusts the spacing of each magnetic element 120 to the media window 101 simultaneously.
The greater the spacing of the magnetic element 120 from the dielectric window 101, the greater the magnetic induction attenuation inside the chamber body 100, and the lower the plasma density inside the corresponding chamber body 100. The smaller the spacing of the magnetic element 120 from the dielectric window 101, the smaller the magnetic induction attenuation inside the chamber body 100, and the lower the plasma density inside the corresponding chamber body 100. This allows for enhanced tunability of the plasma density inside the main body of the reaction chamber. The plasma density inside the main body of the reaction chamber is adjusted at any time, whether before or during the process, to meet the process requirements.
The same contents of this embodiment as those of the previous embodiment will not be described in detail.
In particular, when the inductor has a spiral shape, the height adjustment mechanism 130 is used to adjust the position of the magnetic element 120 along the central axis of the inductor, thereby significantly adjusting the plasma density inside the main body of the reaction chamber.
When the inductor has a coil shape, the height adjustment mechanism 130 can also adjust the position of the magnetic element 120 along the center axis of the inductor.
Another embodiment of the present invention further provides an inductively coupled plasma device, and referring to fig. 4, the inductively coupled plasma device of the present embodiment is different from the inductively coupled plasma device of the previous embodiment in that: the magnetic element 120a has a ring-shaped structure. The same contents of this embodiment as those of the previous embodiment will not be described in detail.
In other embodiments, each of the magnetic elements has a rectangular parallelepiped shape, and a long side direction of the rectangular parallelepiped shape is parallel to a surface of the dielectric window.
The shape of the magnetic element of the present invention is not limited to the shape described in the above embodiments, and may be other shapes.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention, and the scope of the present invention is defined by the appended claims.
Claims (14)
1. An inductively coupled plasma apparatus, comprising:
the reaction chamber comprises a reaction chamber main body, wherein the top wall of the reaction chamber main body comprises a medium window;
the inductance coil is positioned on the top of the dielectric window;
a number of discrete magnetic elements positioned on top of the dielectric window, the magnetic elements being surrounded by and discrete from the inductor coil at least in part by the turns of the inductor coil.
2. The inductively coupled plasma device of claim 1, wherein the number of the inductive coils is M, the M inductive coils include a first inductive coil to an mth inductive coil, M is an integer greater than or equal to 1; the jth inductance coil is provided with a jth radio frequency input end and a jth grounding end; j is an integer of 1 or more and M or less.
3. The inductively coupled plasma device according to claim 2, wherein M is an integer equal to or greater than 2, M inductance coils are separated from each other, the M +1 th inductance coil is located entirely outside and around the M-th inductance coil, M is an integer equal to or greater than 1 and equal to or less than M-1;
the jth inductance coil includes the first to Nth inductance coilsjLoop inductance coil, NjIs an integer of 1 or more.
4. The inductively coupled plasma device of claim 3, wherein N isjIs an integer of 2 or more; the jth inductance coil is in a spiral shape; the central axis of the jth inductance coil is vertical to the surface of the dielectric window;
at least two magnetic elements are arranged between the m < th > inductance coil and the m +1 < th > inductance coil.
5. The inductively coupled plasma device of claim 3, wherein N isjIs an integer of 2 or more; the jth inductance coil is in a coil shape, and the central axis of the jth inductance coil is vertical to the surface of the dielectric window;
a first inductor winding surrounds the at least two magnetic elements; nth of mth inductance coilmWinding the inductor to the Nth of the (m + 1) th inductorm+1At least two magnetic elements are arranged between the coil inductors.
6. The inductively coupled plasma device of claim 1, wherein the position distribution of the plurality of discrete magnetic elements is adjustable.
7. The inductively coupled plasma device of claim 1, wherein the magnetic element has a relative magnetic permeability of 2 to 10000.
8. The inductively coupled plasma device of claim 1, wherein each of the magnetic elements has a shape of a column structure, a ring structure, or a rectangular parallelepiped structure.
9. The inductively coupled plasma device of claim 1, wherein the magnetic element comprises a ferrite magnetic element or a silicon steel magnetic element.
10. The inductively coupled plasma device of claim 1, wherein the number of discrete magnetic elements are distributed along a direction parallel to the surface of the dielectric window.
11. The inductively coupled plasma device of claim 1, further comprising: a height adjustment mechanism coupled to the plurality of discrete magnetic elements, the height adjustment mechanism adapted to adjust a spacing of each of the magnetic elements to the dielectric window.
12. The inductively coupled plasma device of claim 11, wherein the height adjustment mechanism comprises: linear motors, cylinder structures or worm structures.
13. The inductively coupled plasma device of claim 1, wherein the dielectric window includes a central region and an edge region surrounding the central region;
the distribution density of the magnetic elements is greater in the edge region than in the central region.
14. The inductively coupled plasma device of claim 2, further comprising: a radio frequency source; one end of the radio frequency matcher is connected with the radio frequency source, and the other end of the radio frequency matcher is connected with the first radio frequency input end of the first inductance coil to the first radio frequency input end of the Mth inductance coil.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121288712.XU CN214542120U (en) | 2021-06-09 | 2021-06-09 | Inductively coupled plasma device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121288712.XU CN214542120U (en) | 2021-06-09 | 2021-06-09 | Inductively coupled plasma device |
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| CN214542120U true CN214542120U (en) | 2021-10-29 |
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