CN214505494U - Inverted micro LED dot matrix - Google Patents
Inverted micro LED dot matrix Download PDFInfo
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- CN214505494U CN214505494U CN202120537646.9U CN202120537646U CN214505494U CN 214505494 U CN214505494 U CN 214505494U CN 202120537646 U CN202120537646 U CN 202120537646U CN 214505494 U CN214505494 U CN 214505494U
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Abstract
The utility model discloses a little LED dot matrix of flip-chip, including sapphire substrate, N type layer, P type layer, insulating reflection stratum, transparent conducting layer, bar metal level, metal electrode and back metal level, the N type layer is for extending into straight bar and following Y direction parallel distribution along the X direction and having the several, the P type layer is the dot matrix distribution and has the several, insulating reflection stratum covers P type layer and cover simultaneously near the tip of N type layer, be equipped with the opening on the insulating reflection stratum, transparent conducting layer sets up on the P type layer, the bar metal level distributes along X direction parallel and has the several and cover respectively the P type layer, the bar metal level shelters from the top surface and the lateral wall all around of P type layer, the back metal level covers the back of sapphire substrate and be provided with the trompil that the P type layer corresponds. The inverted micro LED lattice can avoid the dispersion of lateral light, the axial light intensity is output, and the heat dispersion performance is better.
Description
Technical Field
The utility model relates to a luminous technical field of semiconductor especially relates to a little LED dot matrix of flip-chip.
Background
With the rapid development of LED technology and the gradual improvement of LED lighting effect, the application of LEDs is more and more extensive, the LED chip is gradually developed to a micro LED lattice from a single LED chip, and the structure of the LED chip comprises a substrate, a P-type semiconductor layer and an N-type semiconductor layer which are arranged on the substrate; the micro LED lattice is LED micro-scaling and matrixing, is a high-density micro-sized LED array integrated on a chip, reduces the distance of pixel points from millimeter level to micron level, generally adopts a process of N electrodes, and controls the lighting of each pixel point by the independent drive of a P electrode; because the LEDs emit light at 360 degrees, axial light and lateral light can be simultaneously generated during single-point light emission in the prior art, and the lateral light passes through the emitting surface of other LEDs to cause light crosstalk, so that the phenomenon that a single LED is started and a light spot is formed is caused.
SUMMERY OF THE UTILITY MODEL
The utility model aims at: the inverted micro LED dot matrix is axially light in intensity, free of spot phenomenon and good in heat dissipation performance.
In order to solve the technical problem, the utility model provides a little LED dot matrix of flip-chip.
A flip micro LED lattice comprises a sapphire substrate, an N-type layer, a P-type layer, an insulating reflection layer, a transparent conductive layer, a strip-shaped metal layer, a metal electrode and a back metal layer, wherein the N-type layer is extended to form a straight strip along the X direction and is distributed with a plurality of layers on the sapphire substrate in parallel along the Y direction, the P-type layer is distributed with a plurality of layers on the N-type layer in a lattice manner along the X direction and the Y direction, the insulating reflection layer covers the P-type layer and simultaneously covers the position near the end part of the N-type layer, an opening is formed in the top surface of the P-type layer, the transparent conductive layer is arranged on the P-type layer in the opening of the insulating reflection layer, the transparent conductive layer protrudes out of the insulating reflection layer, a plurality of strip-shaped metal layers are distributed in parallel along the X direction, and each strip-shaped metal layer respectively covers a plurality of the P-type layers in a corresponding extension manner along the Y direction, the transparent conducting layer is abutted to the strip-shaped metal layer, the metal electrode is arranged on the end portion of the N-type layer, the back metal layer is arranged on the back of the sapphire substrate in a covering mode, and the back metal layer is provided with holes corresponding to the P-type layer.
As a preferred embodiment of the present invention, the opening of the back metal layer is conical, and one side of the wide opening faces the P-type layer.
As the preferred scheme of the utility model, the sapphire substrate is the substrate that grinds thinly.
As a preferred embodiment of the present invention, the opening size of the insulating reflective layer on the top surface of the P-type layer is smaller than the top surface size of the P-type layer.
As a preferred embodiment of the present invention, the top surface size of the transparent conductive layer is smaller than or equal to the top surface size of the P-type layer, and the top surface size of the transparent conductive layer is larger than the etching opening size of the insulating reflective layer on the P-type layer.
As a preferred embodiment of the present invention, the insulating reflective layer is a DBR layer made of an insulating material.
As the preferred scheme of the utility model, the material of transparent conducting layer is ITO.
As a preferred embodiment of the present invention, the material of the bar-shaped metal layer, the metal electrode and the back metal layer is one or more of Cr, Al, Ti, Pt and Au.
As the preferred scheme of the utility model, the distance between the N type layers is more than or equal to 3 um.
As the preferred scheme of the utility model, the length and width size of little LED dot matrix is more than or equal to 10 um.
The embodiment of the utility model provides a little LED dot matrix of flip-chip compares with prior art, and its beneficial effect lies in: this kind of little LED dot matrix of flip-chip openly covers every luminescence unit lateral wall through the metal level at the substrate, can effectively avoid the production of dispersing of side direction light, solves the facula problem, remains the axial light-emitting window at the metal level at the substrate back simultaneously for axial goes out the light intensity, and heat dispersion is also better moreover.
Drawings
Fig. 1 is a front view of a flip-chip micro LED lattice structure according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a schematic cross-sectional view taken along line B-B of FIG. 1;
in the figure, 1, a sapphire substrate; 2. an insulating reflective layer; 3. a transparent conductive layer; 4. a bar-shaped metal layer; 5. a metal electrode; 6. a back side metal layer.
Detailed Description
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples. The following examples are intended to illustrate the invention, but are not intended to limit the scope of the invention.
In the description of the present invention, it is to be understood that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are used in a generic sense, e.g., fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description of the present invention, it should be further understood that the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the machine or component in question must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be considered as limiting the present invention. It should be understood that the terms "first", "second", etc. are used herein to describe various information, but the information should not be limited to these terms, and these terms are only used to distinguish one type of information from another. For example, "first" information may also be referred to as "second" information, and similarly, "second" information may also be referred to as "first" information, without departing from the scope of the present invention.
Referring to fig. 1-3, an inverted micro LED dot matrix according to an embodiment of the present invention includes a sapphire substrate 1, an N-type layer, a P-type layer, an insulating reflective layer 2, a transparent conductive layer 3, a bar-shaped metal layer 4, a metal electrode 5, and a back metal layer 6 in order of process, wherein the N-type layer is a plurality of layers extending in a straight bar shape along an X direction and distributed in parallel on the sapphire substrate 1 along a Y direction, the P-type layer is a plurality of layers distributed in a dot matrix shape along the X and Y directions on the N-type layer, the insulating reflective layer 2 covers the P-type layer and covers the portion near the end of the N-type layer in the X direction, an opening is formed on the top surface of the P-type layer, the transparent conductive layer 3 is disposed on the P-type layer in the opening of the insulating reflective layer 2, and the transparent conductive layer 3 protrudes onto the insulating reflective layer 2, the strip-shaped metal layers 4 are distributed in parallel along the X direction, each strip-shaped metal layer 4 correspondingly covers a plurality of P-type layers in an extending mode along the Y direction, the strip-shaped metal layers 4 shield the top surfaces and the peripheral side walls of the P-type layers, the transparent conducting layers 3 are abutted to the strip-shaped metal layers 4, the metal electrodes 5 are arranged on the left end portion and the right end portion of the N-type layer in the X direction, the back metal layer 6 is arranged on the back of the sapphire substrate 1 in a covering mode, and the back metal layer 6 is provided with holes corresponding to the P-type layers; chips in a lattice are formed between each P-type layer and the N-type layer, the P-type layers and the N-type layers are generated on the sapphire substrate 1 and are correspondingly etched, then the insulating reflecting layer 2 is plated to cover, protect and reflect the P-type layers, abdications are reserved only on the top surface of the P-type layers and at the two ends of the N-type layers, so that the P-type layers arranged along the Y direction can be longitudinally arranged and conductively connected by plating the transparent conducting layer 3 in the opening of the insulating reflecting layer 2 and conducting light with the P-type layers, the strip-shaped metal strip 4 is plated, the strip-shaped metal layer 4 is in abutting connection with the transparent conducting layer 3 and conducting light with the top surface and the side wall of the P-type layers is covered and shielded, the light transmission of the top surface and the light dispersion of the side surface are blocked, and the axial light outlet is reserved on the back surface of the sapphire substrate 1 through an opening which is arranged corresponding to the chip position where the P-type layers are located by the back surface metal layer 6, the light which is axially concentrated is obtained, so that the problem of light spots during light emitting is solved, the N-type layers which extend along the X direction are enabled to be transversely conductive to the N pole by matching with the metal electrodes 5 which are plated on the two ends of the N-type layers, and the back metal layer 6 and the strip metal layer 4 generate good heat dissipation performance.
Referring to fig. 2 and 3, for example, the opening of the back metal layer 6 is conical, and a wider side of the opening faces the P-type layer, so that the light emitting angle of light emitted from the back of the sapphire substrate 1 is further reduced through the conical structure of the opening, and the light concentrating effect is improved.
Illustratively, the sapphire substrate 1 is a thinned substrate, and the light efficiency is improved as much as possible by reducing the thickness of the sapphire substrate 1, and meanwhile, the heat dissipation is assisted.
Referring to fig. 2 and 3, for example, the opening size of the insulating reflective layer 2 on the top surface of the P-type layer is smaller than the top surface size of the P-type layer.
Referring to fig. 2 and 3, for example, the size of the top surface of the transparent conductive layer 3 protruding from the insulating reflective layer 2 is smaller than or equal to the size of the top surface of the P-type layer, and the size of the top surface of the transparent conductive layer 3 is larger than the size of the etching opening of the insulating reflective layer 2 on the P-type layer.
Illustratively, the insulating reflective layer 2 is a DBR layer made of an insulating material, which can protect the P-type layer and the N-type layer and can obtain a high reflectivity with a small number of layers.
Illustratively, the material of the transparent conductive layer 3 is ITO, and the material of the strip-shaped metal layers 4, the metal electrodes 5 and the back metal layer 6 is one or more of Cr, Al, Ti, Pt and Au.
Illustratively, the distance between the N-type layers is larger than or equal to 3um, and the length and width dimensions of the micro LED lattice are larger than or equal to 10 um.
Referring to fig. 2 and 3, illustratively, the strip-shaped metal layer 4 extends downwards along the peripheral side wall of the P-type layer and correspondingly covers the insulating reflective layer 2, so as to further ensure complete blocking of lateral light divergence and high process requirements.
Referring to fig. 1-3, an exemplary manufacturing process of a flip-chip micro LED dot matrix of the present invention includes the following steps:
firstly, sequentially growing an N-type layer and a P-type layer on a sapphire substrate 1 by using MOCVD equipment to finish the manufacture of an epitaxial layer of the GaN-based micro LED;
etching the epitaxial layer, naturally removing the P-type layer from top to bottom in the etching process, and etching the corresponding part of the P-type layer and removing the other part of the P-type layer by correspondingly setting, so that the P-type layer can be arranged according to requirements to form corresponding array distribution, and meanwhile, the corresponding N-type layer is correspondingly exposed, therefore, the top surface of the N-type layer is preferably exposed by etching, the P-type layer distributed in a lattice manner along the X direction and the Y direction is formed, and the X direction and the Y direction mutually and vertically form a plane rectangular coordinate system on the plane of the sapphire substrate 1;
etching the N-type layer to form a plurality of straight-bar N-type layers extending below the P-type layer along the X direction and distributed in parallel along the Y direction, wherein each N-type layer is used as a common cathode of the corresponding P-type layer;
plating an insulating reflection layer 2 covering the P-type layer and the N-type layer, etching the insulating reflection layer 2 to enable the insulating reflection layer 2 on the top surface of the P-type layer to form an opening, enabling the top surface of the P-type layer to be exposed in the insulating reflection layer 2, enabling the end part of the N-type layer outside a dot matrix in the X direction to be exposed, insulating and protecting the P-type layer and the N-type layer through the insulating reflection layer 2, emitting light to the back surface of the sapphire substrate 1, and enabling the P-type part and the N-type layer to be etched and removed at the insulating reflection layer 2 of the corresponding part respectively, so that subsequent conductive connection of the P-type layer and the N-type layer is facilitated;
fifthly, plating a transparent conducting layer 3 at the exposed position of the top surface of the P-type layer, wherein the transparent conducting layer 3 protrudes out of the insulating reflecting layer 2, and the transparent conducting layer 3 is conductive to the top surface of the P-type layer;
sixthly, plating a plurality of strip metal layers 4 correspondingly covering the P-type layer along the Y direction, namely the strip metal layers 4 are distributed in parallel along the X direction and are vertical to the N-type layer, and plating metal electrodes 5 on the end parts of the N-type layer outside the lattice in the X direction, wherein the strip metal layers 4 are conductive to the P-type layer through each transparent conductive layer 3, the strip metal layers 4 in the inverted structure can conduct heat, and the metal electrodes 5 are conductive to the N-type layer, so that the corresponding energization of each lattice is realized;
and seventhly, plating a back metal layer 6 on the back of the sapphire substrate 1, and forming holes corresponding to the P-type layer on the back metal layer 6 to manufacture the inverted micro LED dot matrix.
Referring to fig. 2 and 3, in the seventh step, before the back metal layer 6 is plated, the sapphire substrate 1 is thinned, so as to reduce the thickness of the sapphire substrate 1, improve the light extraction effect, and also help heat dissipation.
Referring to fig. 2 and 3, in the seventh step, for example, the opening of the back metal layer 6 is conical, the wider side of the opening correspondingly faces the P-type layer, the narrower side of the opening correspondingly faces away from the sapphire substrate 1, and the light emitting angle of light emitted from the back of the sapphire substrate 1 is further reduced by the conical structure of the opening, so that the light concentrating effect is improved.
In the third step, the distance between each N-type layer is greater than or equal to 3um, so that the finest process is optimally realized and etching residues between the strip-shaped N-type layers are avoided.
Referring to fig. 2 and 3, for example, in the fourth step, the size of the etching opening of the insulating reflective layer 2 on the top surface of the P-type layer is smaller than that of the top surface of the P-type layer, so that the top surface of the P-type layer is well covered and protected by the insulating reflective layer 2, and the transparent conductive layer 4 can be plated to be conductive with the P-type layer.
Referring to fig. 2 and 3, for example, in the fifth step, the size of the top surface of the transparent conductive layer 3 protruding from the insulating reflective layer 2 is smaller than or equal to the size of the top surface of the P-type layer, and the size of the top surface of the transparent conductive layer 3 is larger than the size of the etching opening of the insulating reflective layer 2 on the P-type layer, so that the transparent conductive layer 3 has the optimal conductive and light-transmitting effect between the bar-shaped metal layer 4 and the P-type layer.
Illustratively, the insulating reflective layer 2 is a DBR layer made of an insulating material, which can protect the P-type layer and the N-type layer and can obtain a high reflectivity with a small number of layers.
Illustratively, the material of the transparent conductive layer 3 is ITO, which is an abbreviation of indium tin metal oxide, and the formed indium tin oxide film has good conductivity and transparency.
Illustratively, the material of the bar-shaped metal layer 4, the metal electrode 5 and the back metal layer 6 is one or more of Cr, Al, Ti, Pt and Au.
Illustratively, the length and width dimensions of the micro LED lattice are more than or equal to 10 um.
In the sixth and seventh steps, the strip-shaped metal layer 4, the metal electrode 5 and the back metal layer 6 are plated by using an evaporation process, and the method has the advantages of simple film forming method, high film purity and compactness, unique film structure and performance and the like.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of modifications and replacements can be made without departing from the technical principle of the present invention, and these modifications and replacements should also be regarded as the protection scope of the present invention.
Claims (10)
1. A flip micro LED lattice is characterized in that: the sapphire substrate comprises a sapphire substrate, an N-type layer, a P-type layer, an insulating reflecting layer, a transparent conducting layer, strip-shaped metal layers, metal electrodes and a back metal layer, wherein the N-type layer extends to form a straight strip along the X direction and is distributed with a plurality of layers on the sapphire substrate in parallel along the Y direction, the P-type layer is distributed with a plurality of layers on the N-type layer in a dot matrix manner along the X direction and the Y direction, the insulating reflecting layer covers the P-type layer and simultaneously covers the position near the end part of the N-type layer, the insulating reflecting layer is provided with an opening on the top surface of the P-type layer, the transparent conducting layer is arranged on the P-type layer in the opening of the insulating reflecting layer, the transparent conducting layer protrudes to the insulating reflecting layer, the strip-shaped metal layers are distributed with a plurality of layers in parallel along the X direction, and each strip-shaped metal layer correspondingly extends to cover a plurality of the P-type layers along the Y direction, the transparent conducting layer is abutted to the strip-shaped metal layer, the metal electrode is arranged on the end portion of the N-type layer, the back metal layer is arranged on the back of the sapphire substrate in a covering mode, and the back metal layer is provided with holes corresponding to the P-type layer.
2. The flip-chip micro LED lattice of claim 1, wherein: the opening of the back metal layer is conical, and the wider side of the opening faces the P-type layer.
3. The flip-chip micro LED lattice of claim 1, wherein: the sapphire substrate is a thinned substrate.
4. The flip-chip micro LED lattice of claim 1, wherein: the size of the opening of the insulating reflecting layer on the top surface of the P-type layer is smaller than that of the top surface of the P-type layer.
5. The flip-chip micro LED lattice of claim 1, wherein: the size of the top surface of the transparent conducting layer is smaller than or equal to that of the top surface of the P-type layer, and the size of the top surface of the transparent conducting layer is larger than that of an etching opening of the insulating reflecting layer on the P-type layer.
6. The flip-chip micro LED lattice according to any one of claims 1-5, wherein: the insulating reflecting layer is a DBR layer made of insulating materials.
7. The flip-chip micro LED lattice according to any one of claims 1-5, wherein: the transparent conducting layer is made of ITO.
8. The flip-chip micro LED lattice according to any one of claims 1-5, wherein: the strip-shaped metal layer, the metal electrode and the back metal layer are made of one or more of Cr, Al, Ti, Pt and Au.
9. The flip-chip micro LED lattice according to any one of claims 1-5, wherein: the distance between the N-type layers is more than or equal to 3 um.
10. The flip-chip micro LED lattice according to any one of claims 1-5, wherein: the length and width of the micro LED lattice are more than or equal to 10 um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120537646.9U CN214505494U (en) | 2021-03-15 | 2021-03-15 | Inverted micro LED dot matrix |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120537646.9U CN214505494U (en) | 2021-03-15 | 2021-03-15 | Inverted micro LED dot matrix |
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| CN214505494U true CN214505494U (en) | 2021-10-26 |
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| CN202120537646.9U Active CN214505494U (en) | 2021-03-15 | 2021-03-15 | Inverted micro LED dot matrix |
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- 2021-03-15 CN CN202120537646.9U patent/CN214505494U/en active Active
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